Plasma processing apparatus

Abstract

A plasma processing system includes a first plasma processing apparatus and a second plasma processing apparatus. The first plasma processing apparatus and the second plasma processing apparatus each include a plasma processing chamber, a substrate supporting portion, an electric power consuming member, a ground frame, a power storage portion, a power receiving coil, and a rectification smoothing portion. The ground frame surrounds the substrate support together with the plasma processing chamber. The electrical power consuming component is disposed within the plasma processing chamber or within the substrate support portion. The power receiving coil is connected to a power storage unit in the ground frame via a rectification smoothing unit. Each of the first plasma processing device and the second plasma processing device is configured in such a manner that: electric power consumption components of the plasma processing devices; the power storage unit of the plasma processing apparatus can be connected in parallel with the power storage unit of the other of the first plasma processing apparatus and the second plasma processing apparatus.

Description

[0001] Cross-reference to related applications

[0002] This application claims priority to U.S. Provisional Patent Application No. 63 / 356,713, filed on June 29, 2022, and entitled “Plasma Processing Apparatus,” the entire contents of which are incorporated herein by reference. Technical Field

[0003] An exemplary embodiment of the present invention relates to a plasma processing apparatus. Background Art

[0004] A plasma processing device is used in plasma processing. The plasma processing device includes a chamber and a substrate support table (mounting table) arranged in the chamber. The substrate support table has a base (lower electrode) and an electrostatic chuck for holding the substrate. A temperature regulating element (such as a heater) for regulating the temperature of the substrate is provided inside the electrostatic chuck. In addition, a filter is provided between the temperature regulating element and the power supply for the temperature regulating element, and the filter can attenuate or block the high-frequency noise entering from the high-frequency electrode and / or other electrical components in the chamber to the power supply line and / or signal line and other lines. The following patent document 1 describes such a plasma processing device.

[0005] Prior art literature

[0006] Patent Literature

[0007] Patent Document 1: Japanese Patent Application Publication No. 2015-173027 Summary of the invention

[0008] Technical problem to be solved by the invention

[0009] An exemplary embodiment of the present invention provides a technique for reducing fluctuations in output voltage with respect to load fluctuations in a power storage unit of a plasma processing apparatus.

[0010] Means for solving technical problems

[0011] In an exemplary embodiment, a plasma processing system is provided. The plasma processing system includes a first plasma processing device and a second plasma processing device. The first plasma processing device and the second plasma processing device each include a plasma processing chamber, a substrate support, a high-frequency power supply, an electrode or an antenna, an electric power consumption component, a grounding frame, a power storage unit, a power receiving coil, and a rectifying and smoothing unit. The substrate support is arranged in the plasma processing chamber. The high-frequency power supply can generate high-frequency electric power. The electrode or the antenna is electrically connected to the high-frequency power supply and can receive high-frequency electric power to generate plasma from gas in the plasma processing chamber. The electric power consumption component is arranged in the plasma processing chamber or in the substrate support. The grounding frame is grounded and surrounds the substrate support together with the plasma processing chamber. The power storage unit is arranged in a space surrounded by the grounding frame and is electrically connected to the electric power consumption component. The power receiving coil is electrically connected to the power storage unit and can receive electric power from the feeding coil through electromagnetic induction coupling. The rectifying and smoothing unit is arranged in a space surrounded by the grounding frame. The rectifying and smoothing unit includes: a rectifying circuit connected to the power receiving coil; and a smoothing circuit connected between the rectifying circuit and the power storage unit. The first plasma processing apparatus and the second plasma processing apparatus are each configured such that a power storage unit of the plasma processing apparatus can be connected in parallel with a power storage unit of the other of the first plasma processing apparatus and the second plasma processing apparatus to power consumption components of the plasma processing apparatus.

[0012] Effects of the Invention

[0013] According to an exemplary embodiment, a technique can be provided that can reduce fluctuations in output voltage with respect to fluctuations in load of a power storage unit of a plasma processing apparatus. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0015] Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0016] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment.

[0017] Figure 4 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment.

[0018] Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0019] Figure 6FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0020] Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0021] Figure 8 FIG. 1 is a diagram showing a power feeding unit according to an exemplary embodiment.

[0022] Fig. 9 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0023] Fig.10 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0024] Fig.11 It is a diagram showing a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment.

[0025] Fig.12 It is a diagram showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment.

[0026] Fig.13 is a diagram showing an RF filter according to an exemplary embodiment.

[0027] Fig.14 FIG. 1 is a diagram showing a rectifying and smoothing unit according to an exemplary embodiment.

[0028] Fig.15 is a diagram showing an RF filter according to an exemplary embodiment.

[0029] Fig.16 FIG. 1 is a diagram showing a communication unit of a power feeding unit and a communication unit of a rectifying and smoothing unit according to an exemplary embodiment.

[0030] Fig.17 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0031] Fig.18 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0032] Fig.19 FIG. 1 is a diagram showing a communication section of a power feeding section and a communication section of a rectifying and smoothing section according to another exemplary embodiment.

[0033] Fig. 20 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0034] Fig.21FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0035] Fig. 22 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to still another exemplary embodiment.

[0036] Fig.23 (a) and Fig.23 (b) are diagrams showing a power storage unit according to an exemplary embodiment.

[0037] Fig.24 is a diagram showing a voltage controlled converter according to an exemplary embodiment.

[0038] Fig.25 It is a diagram showing a constant voltage control unit according to an exemplary embodiment.

[0039] Fig.26 It is a diagram showing a constant voltage control unit according to another exemplary embodiment.

[0040] Fig. 27 is a diagram showing a plasma processing system according to an exemplary embodiment.

[0041] Fig.28 FIG. 1 is a diagram partially showing the structure of a plasma processing system according to an exemplary embodiment.

[0042] Fig.29 FIG. 1 is a diagram partially showing the structure of a plasma processing system according to an exemplary embodiment.

[0043] Fig.30 FIG. 1 is a diagram partially showing the structure of a plasma processing system according to an exemplary embodiment.

[0044] Fig.31 FIG. 1 is a diagram partially showing the structure of a plasma processing system according to an exemplary embodiment.

[0045] Fig.32 FIG. 1 is a diagram partially showing the structure of a plasma processing system according to an exemplary embodiment.

[0046] Fig.33 FIG. 1 is a diagram partially showing the structure of a plasma processing system according to an exemplary embodiment.

[0047] Fig.34 FIG. 1 is a diagram showing a state of charging of a power storage unit in a plasma processing system according to an exemplary embodiment.

[0048] Fig.35FIG. 1 is a diagram showing a state of a power storage unit during discharge in a plasma processing system according to an exemplary embodiment.

[0049] Fig.36 FIG. 1 is a timing chart related to discharge of a power storage unit in a plasma processing system according to an exemplary embodiment.

[0050] Fig.37 is a diagram showing a plasma processing system according to another exemplary embodiment. DETAILED DESCRIPTION

[0051] Hereinafter, various exemplary embodiments will be described in detail with reference to the accompanying drawings. In addition, in each of the drawings, the same reference numerals are given to the same or corresponding parts.

[0052] Figure 1 : is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate supporting surface for supporting a substrate.

[0053] The plasma generating unit 12 is capable of generating plasma from at least one processing gas supplied into the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-Resonance Plasma: Electron Cyclotron Resonance Plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current: Alternating Current) plasma generating unit and a DC (Direct Current: Direct Current) plasma generating unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency: Radio Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0054] The control unit 2 is capable of processing computer-executable commands, which are used to cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 is capable of controlling the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 is capable of reading a program from the storage unit 2a2 and performing various control actions by executing the read program. The program may be pre-stored in the storage unit 2a2 or acquired via a medium when necessary. The acquired program is stored in the storage unit 2a2 and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium may be various storage media readable by the computer 2a, or a communication line connected to the communication interface 2a3. The processing unit 2a1 may be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0055] Next, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0056] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is capable of introducing at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side wall 10a of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0057] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has: a central area 111a for supporting a substrate W; and an annular area 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular area 111b of the main body 111 surrounds the central area 111a of the main body 111 when viewed from above. The substrate W is arranged on the central area 111a of the main body 111, and the ring assembly 112 is arranged on the annular area 111b of the main body 111 in a manner surrounding the substrate W on the central area 111a of the main body 111. Therefore, the central area 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular area 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0058] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode (also called an adsorption electrode, a chuck electrode, or a clamping electrode) 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may also have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or may be arranged on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 described later may be arranged in the ceramic component 1111a. In this case, at least one RF / DC electrode can function as a lower electrode. In the case where a bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and at least one RF / DC electrode may function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0059] The ring assembly 112 includes one or more ring components. In one embodiment, the one or more ring components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0060] In addition, the substrate support portion 11 may include a temperature regulating module for regulating at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature regulating module may include a heater, a heat transfer medium, a flow path 1110a or a combination thereof. A heat transfer fluid such as salt water or gas may flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion for supplying a heat transfer gas to the gap between the back side of the substrate W and the central area 111a.

[0061] The shower head 13 can introduce at least one processing gas from the gas supply part 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a can be introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, the gas introduction part may include, in addition to the shower head 13, one or more side gas injection parts (SGI: Side Gas Injector) installed in one or more openings formed on the side wall 10a.

[0062] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is capable of supplying at least one process gas from the gas source 21 corresponding to each other to the shower head 13 via the flow controller 22 corresponding to each other. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Moreover, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0063] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 can supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and ion components in the formed plasma can be introduced (attracted) to the substrate W.

[0064] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and can generate a source RF signal (source RF power) for plasma generation. In one embodiment, the source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a can generate a plurality of source RF signals with different frequencies. The generated one or more source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0065] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is capable of generating a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the source RF signal. In one embodiment, the bias RF signal has a frequency lower than that of the source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be capable of generating a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the source RF signal and the bias RF signal may be pulsed.

[0066] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is capable of generating a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is capable of generating a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0067] In various embodiments, the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform in the shape of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first DC generator 32a and the second DC generator 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0068] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0069] In addition, in a capacitive coupling type plasma processing apparatus 1, an upper electrode is arranged in such a manner that a plasma processing space is located between the upper electrode and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the upper electrode or the lower electrode in the substrate support portion 11. In the case where the plasma processing apparatus 1 is an inductive coupling type plasma processing apparatus, an antenna is arranged in such a manner that a plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna. In the case where the plasma processing apparatus 1 is a plasma processing apparatus that generates plasma using surface waves such as microwaves, the antenna is arranged in such a manner that a plasma processing space is located between the antenna and the substrate support portion 11. A high-frequency power source such as the first RF generating portion 31a is electrically connected to the antenna via a waveguide.

[0070] Various exemplary embodiments of plasma processing apparatuses are described below. Each of the plasma processing apparatuses described below can supply power to at least one power consuming component in the chamber 10 by wireless power supply (electromagnetic induction coupling) and can have the same structure as the plasma processing apparatus 1 .

[0071] Figure 3 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to an exemplary embodiment. Figure 3 The plasma processing apparatus 100A shown in FIG. 1 includes at least one high frequency power source 300, a power receiving coil unit 140, a power storage unit 160, and at least one power consumption component 240 (see FIG. 1 ). Fig.25 and Fig.26 The plasma processing apparatus 100A may further include a power feeding unit 120 , a power feeding coil unit 130 , a rectifying and smoothing unit 150 , a constant voltage control unit 180 (an example of a voltage control unit), a ground frame 110 , and a matching unit 301 .

[0072] At least one high frequency power source 300 includes a first RF generating section 31a and / or a second RF generating section 31b. At least one high frequency power source 300 is electrically connected to the substrate supporting section 11 via a matching section 301. The matching section 301 includes at least one impedance matching circuit.

[0073] The ground frame 110 includes the chamber 10 and is electrically grounded. The ground frame 110 electrically separates the space 110h (RF-Hot space) inside it from the space 110a (atmospheric space) outside. The ground frame 110 surrounds the substrate support portion 11 arranged in the space 110h. In the plasma processing device 100A, the rectification and smoothing portion 150, the power storage portion 160 and the constant voltage control portion 180 are arranged in the space 110h. In addition, in the plasma processing device 100A, the feeding portion 120, the feeding coil portion 130 and the receiving coil portion 140 are arranged in the space 110a. In addition, the space 110h includes a decompression space (vacuum space) and a non-decompression space (non-vacuum space). The decompression space is the space inside the chamber 10, and the non-decompression space is the space outside the chamber 10. The substrate support portion 11 and the substrate W are arranged in the decompression space. The rectifying and smoothing unit 150 , the power storage unit 160 , and the constant voltage control unit 180 are arranged in the non-decompression space.

[0074] The equipment arranged in the space 110a, namely the feeding unit 120, the feeding coil unit 130 and the receiving coil unit 140, etc., is covered by a metal shell formed of a metal such as aluminum, and the metal shell is grounded. Thus, it is possible to suppress the leakage of high-frequency noise caused by high-frequency electric power such as the first RF signal (source RF signal) and / or the second RF signal (bias RF signal). The metal shell and each power supply line have an insulation distance between them. In addition, in the following description, the high-frequency electric power such as the first RF signal and / or the second RF signal, that is, the high-frequency electric power transmitted to the feeding unit 120, is sometimes referred to as high-frequency noise, common mode noise or conductive noise.

[0075] The power feeding unit 120 is electrically connected between the AC power source 400 (e.g., industrial frequency AC power source) and the power feeding coil unit 130. The power feeding unit 120 can receive the frequency of the AC power from the AC power source 400, convert the frequency of the AC power into a transmission frequency, and thereby generate AC power having the transmission frequency, that is, transmission AC power.

[0076] The feeding coil unit 130 includes a feeding coil 131 (see Fig. 9 The power feeding coil 131 is electrically connected to the power feeding unit 120 . The power feeding coil 131 can receive the transmission AC power from the power feeding unit 120 and wirelessly transmit the transmission AC power to the power receiving coil 141 .

[0077] The power receiving coil unit 140 includes a power receiving coil 141 (see Fig. 9). The receiving coil 141 is electromagnetically inductively coupled to the feeding coil 131. Electromagnetic inductive coupling includes magnetic field coupling and electric field coupling. In addition, magnetic field coupling includes magnetic field resonance (also called magnetic resonance). The distance between the receiving coil 141 and the feeding coil 131 is set to be able to suppress common mode noise (conductive noise). In addition, the distance between the receiving coil 141 and the feeding coil 131 is set to be a distance that can supply power. The distance between the receiving coil 141 and the feeding coil 131 is set so that the attenuation of high-frequency electric power (i.e., high-frequency noise) between the receiving coil 141 and the feeding coil 131 becomes less than a threshold value, and the electric power from the feeding coil 131 can be received in the receiving coil 141. The threshold value of the attenuation amount is set to a value that can fully prevent damage or malfunction of the feeding unit 120. The threshold value of the attenuation amount is, for example, -20 dB. The transmission AC power received by the receiving coil unit 140 is output to the rectification and smoothing unit 150.

[0078] The rectifying and smoothing unit 150 is electrically connected between the power receiving coil unit 140 and the power storage unit 160. The rectifying and smoothing unit 150 generates DC power by performing full-wave rectification and smoothing on the AC power transmitted from the power receiving coil unit 140. The DC power generated by the rectifying and smoothing unit 150 is stored in the power storage unit 160. The power storage unit 160 is electrically connected between the rectifying and smoothing unit 150 and the constant voltage control unit 180. In addition, the rectifying and smoothing unit 150 may generate DC power by performing half-wave rectification and smoothing on the AC power transmitted from the power receiving coil unit 140.

[0079] The rectifying and smoothing unit 150 and the feeding unit 120 are electrically connected to each other via the signal line 1250. The rectifying and smoothing unit 150 sends an instruction signal to the feeding unit 120 via the signal line 1250. The instruction signal is a signal for instructing the feeding unit 120 to supply the transmitted AC power or stop the supply of the transmitted AC power. The instruction signal may include a state signal, an abnormality detection signal, and a cooling control signal for the feeding coil unit 130 and the receiving coil unit 140. The state signal is a voltage detector 155v (refer to Fig.14 ) and current detector 155i (refer to Fig.14 ) The value of the voltage, current, electric power and / or phase detected by the power supply 120. The abnormality detection signal is a signal for transmitting the failure of the rectification and smoothing unit 150 and / or the occurrence of temperature abnormality to the power supply 120. The cooling control signal is used to control the cooling mechanism provided in the power supply coil unit 130 and the power receiving coil unit 140. The cooling control signal controls the speed of the fan in the case of air cooling, for example. In addition, in the case of liquid cooling, the flow rate and / or temperature of the refrigerant are controlled.

[0080] The constant voltage control unit 180 applies a voltage to at least the power consumption component 240 using the electric power stored in the power storage unit 160. The constant voltage control unit 180 can control the application of the voltage to at least the power consumption component 240 and the stop thereof.

[0081] In the plasma processing apparatus 100A, the power receiving coil 141 can function as a filter for high-frequency noise caused by high-frequency electric power such as the first RF signal and / or the second RF signal, thereby suppressing the high-frequency noise from being transmitted to the power supply outside the plasma processing apparatus.

[0082] Reference Figure 4 . Figure 4 FIG. 1 is a diagram schematically showing another exemplary embodiment of a plasma processing apparatus. Figure 4 The plasma processing apparatus 100B shown will be described from the viewpoint of differences from the plasma processing apparatus 100A.

[0083] The plasma processing apparatus 100B further includes a voltage control converter 170. The voltage control converter 170 is a DC-DC converter, and is connected between the power storage unit 160 and the constant voltage control unit 180. The voltage control converter 170 can be configured to input a constant output voltage to the constant voltage control unit 180 even when a voltage fluctuation occurs in the power storage unit 160. In addition, the voltage fluctuation in the power storage unit 160 may occur as a voltage drop corresponding to the stored electric power, for example, when the power storage unit 160 is formed of an electric double layer.

[0084] Reference Figure 5 . Figure 5 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 5 The plasma processing apparatus 100C shown will be described from the viewpoint of differences from the plasma processing apparatus 100B.

[0085] The plasma processing apparatus 100C further includes an RF filter 190. The RF filter 190 is connected between the rectifying and smoothing section 150 and the feeding section 120. The RF filter 190 constitutes a portion of the signal line 1250. The RF filter 190 has a characteristic of suppressing the transmission of high-frequency electric power (high-frequency noise) via the signal line 1250. That is, the RF filter 190 includes a low-pass filter having a high impedance to high-frequency noise (conductive noise) but having a characteristic of passing an indication signal of a relatively low frequency.

[0086] In the plasma processing device 100C, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are formed as one body (integrated). That is, the power storage unit 160, the voltage control converter 170 and the constant voltage control unit 180 are all arranged in a single metal shell, or formed on a single circuit board. As a result, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other are shortened. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the power storage unit 160 and the voltage control converter 170 to each other can be made equal to each other. In addition, the lengths of a pair of power supply lines (positive line and negative line) connecting the voltage control converter 170 and the constant voltage control unit 180 to each other can be shortened. In addition, the lengths of a pair of power supply lines connecting the voltage control converter 170 and the constant voltage control unit 180 to each other can be made equal to each other. Therefore, it is possible to suppress malfunction and damage of the device caused by normal mode noise (potential difference between the positive line and the negative line). Furthermore, when other metal bodies are provided around the shell in the chamber 10 for shielding electromagnetic fields, the single shell may not be made of metal.

[0087] Reference Figure 6 . Figure 6 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 6 The plasma processing apparatus 100D shown will be described from the viewpoint of differences from the plasma processing apparatus 100C.

[0088] The plasma processing apparatus 100D does not include the RF filter 190. In the plasma processing apparatus 100D, the rectifying and smoothing section 150 includes a communication section 151 as a wireless section. The communication section 151 is arranged in the non-decompression space. In addition, the feeding section 120 includes a communication section 121 as a wireless section. The communication section 121 is arranged in the space 110a. The above-mentioned instruction signal is transmitted between the rectifying and smoothing section 150 and the feeding section 120 using the communication section 151 and the communication section 121. The details of the communication section 121 and the communication section 151 will be described later.

[0089] Reference Figure 7 . Figure 7 FIG. 1 is a diagram schematically showing a plasma processing apparatus according to another exemplary embodiment. Figure 7 The plasma processing apparatus 100E shown will be described from the viewpoint of differences from the plasma processing apparatus 100D.

[0090] The plasma processing apparatus 100E further includes an RF filter 200. The RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 has a characteristic of reducing or blocking high frequency noise transmitted from the power receiving coil unit 140 to the power feeding coil 131 and the power feeding unit 120. The details of the RF filter 200 will be described later.

[0091] The structures of various components for wireless power supply in the plasma processing apparatus according to various exemplary embodiments will be described in detail below.

[0092] [Structure of the power feeding unit]

[0093] Figure 8 1 is a diagram showing a feeder according to an exemplary embodiment. As described above, the feeder 120 can receive the frequency of the AC power from the AC power source 400 and convert the frequency of the AC power into a transmission frequency, thereby generating a transmission AC power having the transmission frequency.

[0094] In one embodiment, the feeder 120 includes a control unit 122, a rectifying and smoothing unit 123, and an inverter 124. The control unit 122 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array).

[0095] The rectifying and smoothing unit 123 includes a rectifying circuit and a smoothing circuit. The rectifying circuit includes, for example, a diode bridge. The smoothing circuit includes, for example, a line capacitor. The rectifying and smoothing unit 123 generates a DC power by performing full-wave rectification and smoothing on the AC power from the AC power supply 400. In addition, the rectifying and smoothing unit 123 may also generate a DC power by performing half-wave rectification and smoothing on the AC power from the AC power supply 400.

[0096] The inverter 124 generates a transmission AC power having a transmission frequency from the DC power output by the rectifying and smoothing section 123. The inverter 124 is, for example, a full-bridge inverter including a plurality of triacs or a plurality of switching elements (e.g., FETs). The inverter 124 generates the transmission AC power by ON / OFF control of the plurality of triacs or the plurality of switching elements by the control section 122. The transmission AC power output from the inverter 124 is output to the feeding coil section 130.

[0097] The feeding section 120 may further include a voltage detector 125v, a current detector 125i, a voltage detector 126v, and a current detector 126i. The voltage detector 125v detects a voltage value between a pair of power supply lines connecting the rectifying and smoothing section 123 and the inverter 124 to each other. The current detector 125i detects a current value between the rectifying and smoothing section 123 and the inverter 124. The voltage detector 126v detects a voltage value between a pair of power supply lines connecting the inverter 124 and the feeding coil section 130 to each other. The current detector 126i detects a current value between the inverter 124 and the feeding coil section 130. The voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i are notified to the control section 122.

[0098] The feeding unit 120 includes the above-mentioned communication unit 121. The communication unit 121 includes a driver 121d, a transmitter 121tx, and a receiver 121rx. The transmitter 121tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 121rx is a receiver of a wireless signal or a receiver of an optical signal. The communication unit 121 drives the transmitter 121tx through the driver 121d, and outputs the signal from the control unit 122 from the transmitter 121tx as a wireless signal or an optical signal. The signal output from the transmitter 121tx is transmitted to the communication unit 151 (see FIG. 151 ) described later. Fig.14 ) is received. In addition, the communication unit 121 receives a signal such as the above-mentioned instruction signal from the communication unit 151 through the receiver 121rx, and inputs the received signal to the control unit 122 via the driver 121d. The control unit 122 controls the inverter 124 in accordance with the instruction signal received from the communication unit 151 via the communication unit 121, the voltage value detected by the voltage detector 125v, the current value detected by the current detector 125i, the voltage value detected by the voltage detector 126v, and the current value detected by the current detector 126i, thereby switching the output and stopping of the transmission of AC power.

[0099] [Power feeding coil section and power receiving coil section]

[0100] Reference Figures 9 to 11 . Figures 9 to 11 Each of the figures shows a power feeding coil unit and a power receiving coil unit according to an exemplary embodiment. Fig. 9As shown, the feeding coil unit 130 may include a resonant capacitor 132a and a resonant capacitor 132b in addition to the feeding coil 131. The resonant capacitor 132a is connected between one of a pair of power supply lines that connect the feeding unit 120 and the feeding coil unit 130 to each other and one end of the feeding coil 131. The resonant capacitor 132b is connected between the other of the pair of power supply lines and the other end of the feeding coil 131. The feeding coil 131, the resonant capacitor 132a and the resonant capacitor 132b constitute a resonant circuit for the transmission frequency. That is, the feeding coil 131, the resonant capacitor 132a and the resonant capacitor 132b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the feeding coil unit 130 may not include any of the resonant capacitor 132a and the resonant capacitor 132b.

[0101] like Fig.10 and Fig.11 As shown, the feeding coil unit 130 may further include a metal shell 130g. The metal shell 130g has an open end and is grounded. The feeding coil 131 is arranged in the metal shell 130g in a manner to ensure the insulation distance. The feeding coil unit 130 may further include a heat sink 134, a ferrite component 135 and a thermally conductive sheet 136. The heat sink 134 is arranged in the metal shell 130g and supported by the metal shell 130g. The ferrite component 135 is arranged on the heat sink 134. The thermally conductive sheet 136 is arranged on the ferrite component 135. The feeding coil 131 is arranged on the thermally conductive sheet 136 and is opposite to the receiving coil 141 across the open end of the metal shell 130g. As shown in FIG. Fig.11 As shown, a resonant capacitor 132a and a resonant capacitor 132b may also be housed in the metal housing 130g.

[0102] like Fig. 9 As shown, the power receiving coil unit 140 includes a power receiving coil 141. The power receiving coil 141 can be electromagnetically inductively coupled with the power feeding coil 131. In addition to the power receiving coil 141, the power receiving coil unit 140 may include a resonant capacitor 142a and a resonant capacitor 142b. The resonant capacitor 142a is connected between one of a pair of power supply lines extending from the power receiving coil unit 140 and one end of the power receiving coil 141. The resonant capacitor 142b is connected between the other of the pair of power supply lines and the other end of the power receiving coil 141. The power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b constitute a resonant circuit for the transmission frequency. That is, the power receiving coil 141, the resonant capacitor 142a, and the resonant capacitor 142b have a resonant frequency that is substantially consistent with the transmission frequency. In addition, the power receiving coil unit 140 may not include any of the resonant capacitor 142a and the resonant capacitor 142b.

[0103] like Fig.10 and Fig.11As shown, the power receiving coil unit 140 may further include a metal shell 140g. The metal shell 140g has an open end and is grounded. The power receiving coil 141 is arranged in the metal shell 140g in a manner to ensure the insulation distance. The power receiving coil unit 140 may further include a spacer 143, a heat sink 144, a ferrite component 145 and a thermally conductive sheet 146. The spacer 143 is arranged in the metal shell 140g and is supported by the metal shell 140g. The spacer 143 will be described later. The heat sink 144 is arranged on the spacer 143. The ferrite component 145 is arranged on the heat sink 144. The thermally conductive sheet 146 is arranged on the ferrite component 145. The power receiving coil 141 is arranged on the thermally conductive sheet 146, and is opposite to the power feeding coil 131 across the open end of the metal shell 140g. As shown in FIG. Fig.11 As shown, a resonant capacitor 142a and a resonant capacitor 142b may also be housed in the metal housing 140g.

[0104] The spacer 143 is formed of a dielectric and is provided between the power receiving coil 141 and the metal casing 140g (ground). The spacer 143 can provide a spatial parasitic capacitance between the power receiving coil 141 and the ground.

[0105] [Impedance characteristics of the power receiving coil]

[0106] Reference Fig.12 . Fig.12 It is a diagram showing the impedance characteristics of the power receiving coil unit according to an exemplary embodiment. Fig.12 140g represents the impedance characteristics of the power receiving coil unit 140 according to the thickness of the spacer 143. The thickness of the spacer 143 corresponds to the distance between the heat sink 144 and the metal housing 140g. Fig.12 As shown, the power receiving coil unit 140 can adjust the frequency f according to the thickness of the spacer 143. H and frequency f L Therefore, according to the power receiving coil unit 140, high impedance can be provided at the frequencies of two high-frequency electric powers used in the plasma processing device, such as the first RF signal and the second RF signal. In addition, high impedance can be obtained in the power receiving coil unit 140, so the loss of high-frequency electric power can be suppressed, and a high processing rate (for example, etching rate) can be obtained.

[0107] [RF filter 200]

[0108] Reference Fig.13 . Fig.13 FIG. 1 is a diagram showing an RF filter according to an exemplary embodiment. Fig.13As shown, the RF filter 200 is connected between the power receiving coil unit 140 and the rectifying and smoothing unit 150. The RF filter 200 includes an inductor 201a, an inductor 201b, a terminal capacitor 202a, and a terminal capacitor 202b. One end of the inductor 201a is connected to the resonant capacitor 142a, and the other end of the inductor 201a is connected to the rectifying and smoothing unit 150. One end of the inductor 201b is connected to the resonant capacitor 142b, and the other end of the inductor 201b is connected to the rectifying and smoothing unit 150. The terminal capacitor 202a is connected between one end of the inductor 201a and the ground. The terminal capacitor 202b is connected between one end of the inductor 201b and the ground. The inductor 201a and the terminal capacitor 202a form a low-pass filter. In addition, the inductor 201b and the terminal capacitor 202b form a low-pass filter. The RF filter 200 can provide high impedance at the frequencies of two high frequency electric powers used in a plasma processing device, such as the first RF signal and the second RF signal, thereby suppressing the loss of high frequency electric power and achieving a high processing rate (eg, etching rate).

[0109] [Rectifier and Smoothing Department]

[0110] Reference Fig.14 . Fig.14 1 is a diagram showing a rectifying and smoothing unit of an exemplary embodiment. In one embodiment, the rectifying and smoothing unit 150 includes a control unit 152, a rectifying circuit 153, and a smoothing circuit 154. The rectifying circuit 153 is connected between the power receiving coil unit 140 and the smoothing circuit 154. The smoothing circuit 154 is connected between the rectifying circuit 153 and the power storage unit 160. The control unit 152 is composed of a processor such as a CPU or a programmable logic device such as an FPGA (Field-Programmable Gate Array). In addition, the control unit 152 may be the same as the control unit 122 or different.

[0111] The rectifier circuit 153 outputs power generated by full-wave rectifying the AC power from the power receiving coil unit 140. The rectifier circuit 153 is, for example, a diode bridge. Alternatively, the rectifier circuit 153 may output power generated by half-wave rectifying the AC power from the power receiving coil unit 140.

[0112] The smoothing circuit 154 generates DC power by smoothing the power from the rectifying circuit 153. The smoothing circuit 154 may include an inductor 1541a, a capacitor 1542a, and a capacitor 1542b. One end of the inductor 1541a is connected to one of a pair of inputs of the smoothing circuit 154. The other end of the inductor 1541a is connected to the positive output (V OUT+The positive output of the rectifying and smoothing unit 150 is connected via a positive line 160p (see Fig.23 (a) and Fig.23 (b)) is connected to one end of each of one or more capacitors of the power storage unit 160.

[0113] One end of the capacitor 1542a is connected to one of the pair of inputs of the smoothing circuit 154 and one end of the inductor 1541a. The other end of the capacitor 1542a is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- The negative output of the rectifying and smoothing unit 150 is connected via a negative line 160m (see Fig.23 (a) and Fig.23 (b)) is connected to the other end of each of the one or more capacitors of the power storage unit 160. One end of the capacitor 1542b is connected to the other end of the inductor 1541a. The other end of the capacitor 1542b is connected to the other of the pair of outputs of the smoothing circuit 154 and the negative output (V OUT- )connect.

[0114] The rectifying and smoothing unit 150 may further include a voltage detector 155v and a current detector 155i. The voltage detector 155v detects a voltage value between a positive output and a negative output of the rectifying and smoothing unit 150. The current detector 155i detects a current value between the rectifying and smoothing unit 150 and the power storage unit 160. The voltage value detected by the voltage detector 155v and the current value detected by the current detector 155i are notified to the control unit 152. The control unit 152 generates the above-mentioned instruction signal in accordance with the electric power stored in the power storage unit 160. For example, when the electric power stored in the power storage unit 160 is less than the first threshold value, the control unit 152 generates an instruction signal for instructing the feeding unit 120 to supply power, that is, output and transmit AC electric power. The first threshold value is, for example, the electric power consumption of a load such as the electric power consumption component 240. In addition, it may be a value obtained by multiplying the electric power consumption of the load such as the electric power consumption component 240 by a certain value (for example, a value in a range of 1 to 3) in consideration of a margin. On the other hand, when the electric power stored in the power storage unit 160 is greater than the second threshold value, the control unit 152 generates an instruction signal for instructing the power feeding unit 120 to stop supplying power, that is, to stop outputting and transmitting AC electric power. The second threshold value is a value that does not exceed the limit storage electric power of the power storage unit 160. The second threshold value is, for example, a value obtained by multiplying the limit storage electric power of the power storage unit 160 by a certain value (for example, a value less than 1).

[0115] The rectifying and smoothing section 150 includes the above-mentioned communication section 151. The communication section 151 includes a driver 151d, a transmitter 151tx, and a receiver 151rx. The transmitter 151tx is a transmitter of a wireless signal or a transmitter of an optical signal. The receiver 151rx is a receiver of a wireless signal or a receiver of an optical signal. The communication section 151 drives the transmitter 151tx through the driver 151d, so that a signal from the control section 122 such as an instruction signal is output from the transmitter 151tx as a wireless signal or an optical signal. The signal output from the transmitter 151tx is received by the communication section 121 of the feeding section 120. In addition, the communication section 151 receives a signal from the communication section 121 through the receiver 151rx, and inputs the received signal to the control section 152 via the driver 151d.

[0116] [RF filter 190]

[0117] Reference Fig.15 . Fig.15 is a diagram showing an RF filter 190 according to an exemplary embodiment. Fig.15 As shown, the signal line 1250 may include a first signal line electrically connecting the signal output (Tx) of the feed section 120 with the signal input (Rx) of the rectifying and smoothing section 150, and a second signal line electrically connecting the signal input (Rx) of the feed section 120 with the signal output (Tx) of the rectifying and smoothing section 150. The signal line 1250 may include a signal line connecting the first reference voltage terminal (VCC) of the feed section 120 with the first reference voltage terminal (VCC) of the rectifying and smoothing section 150, and a signal line connecting the second reference voltage terminal (GND) of the feed section 120 with the second reference voltage terminal (GND) of the rectifying and smoothing section 150. The signal line 1250 may be a shielded cable covered by a shield of ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be covered by the shield one by one, or may be covered by the shield together. The RF filter 190 provides a low-pass filter to each of the plurality of signal lines constituting the signal line 1250. The low-pass filter may be an LC filter including an inductor and a capacitor. The inductor of the low-pass filter constitutes a portion of the corresponding signal line. The capacitor is connected between one end of the inductor connected to the feeder 120 and the ground. By using the RF filter 190, it is possible to suppress the transmission of high-frequency electric power (high-frequency noise) via the signal line 1250 between the rectifying and smoothing unit 150 and the feeder 120.

[0118] [Communication section of the power feeding section and communication section of the rectifying and smoothing section]

[0119] Reference Figure 16 to Figure 18 . Fig.16 FIG. 1 is a diagram showing a communication unit of a power feeding unit and a communication unit of a rectifying and smoothing unit according to an exemplary embodiment. Fig.17 and Fig.18 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 6 , Figure 7 , Fig.16 , Fig.17 and Fig.18 As shown, the communication unit 121 and the communication unit 151 can be configured to transmit signals such as the above-mentioned indication signal between each other via wireless communication. Communication via wireless communication can also be performed by optical communication. In the case where the communication unit 121 and the communication unit 151 transmit signals between them via wireless communication, the communication unit 121 and the communication unit 151 can be arranged in any position as long as there is no obstruction between them. According to the examples shown in these figures, the RF filter 190 is not required. In addition, in the case including Figure 16 to Figure 18 In various exemplary embodiments of the examples shown, the signal line 1250 may be a shielded cable covered by a shield at ground potential. In this case, the plurality of signal lines constituting the signal line 1250 may be covered by the shield individually or together.

[0120] Reference Figure 19 to Figure 22 . Fig.19 FIG. 1 is a diagram showing a communication section of a power feeding section and a communication section of a rectifying and smoothing section according to another exemplary embodiment. Figure 20 to Figure 22 Each of the figures schematically shows a plasma processing apparatus according to another exemplary embodiment. Figure 19 to Figure 22 As shown in the figure, the communication unit 121 and the communication unit 151 can be configured to transmit a signal (optical signal) such as the above-mentioned instruction signal between each other via the optical fiber 1260, that is, by optical fiber communication. In the case where the communication unit 121 and the communication unit 151 transmit signals between them via the optical fiber 1260, the communication unit 121 and the communication unit 151 can be arranged at any position as long as the bending radius of the optical fiber 1260 is within the allowable range. In the examples shown in these figures, the RF filter 190 is also not required.

[0121] [Electricity storage unit]

[0122] Reference Fig.23 (a) and Fig.23 (b). Fig.23 (a) and Fig.23 (b) and (c) are diagrams showing a power storage unit according to an exemplary embodiment. Fig.23 As shown in (a), the power storage unit 160 includes a capacitor 161. The capacitor 161 is connected between a pair of power supply lines, that is, a positive line 160p and a negative line 160m. The positive line 160p is connected from the positive output (V OUT+) extends toward the load. The negative line 160m extends from the negative output (V OUT- ) extends toward the load. Capacitor 161 may be a polarized capacitor. Capacitor 161 may also be a double-layer battery or a lithium-ion battery.

[0123] like Fig.23 As shown in (b), the storage unit 160 may include a plurality of capacitors 161. The plurality of capacitors 161 are connected in series between the positive line 160p and the negative line 160m. The plurality of capacitors 161 may have the same electrostatic capacitance as each other, or may have electrostatic capacitances different from each other. Each of the plurality of capacitors 161 may be a polarized capacitor. Each of the plurality of capacitors 161 may also be an electric double layer battery or a lithium ion battery. The storage unit 160 needs to be used under the condition that the total value of the input voltage corresponding thereto and the line potential difference caused by normal mode noise is lower than the allowable input voltage. In the case where the storage unit 160 includes a plurality of capacitors 161 connected in series, the allowable input voltage of the storage unit 160 becomes higher. Therefore, according to Fig.23 In the example shown in (b), the noise resistance of the power storage unit 160 is improved.

[0124] [Voltage Control Converter]

[0125] Reference Fig.24 . Fig.24 1 is a diagram showing a voltage control converter according to an exemplary embodiment. The voltage control converter 170 is a DC-DC converter. The voltage control converter 170 is connected between the power storage unit 160 and the constant voltage control unit 180. The positive line 160p is connected to the positive input (V IN+ ) is connected. The negative line 160m is connected to the negative input (V IN- ) connection. The positive output (V OUT+ ) and the positive input (V IN+ ) is connected. The negative output (V OUT- ) and the negative input (V IN- )connect.

[0126] The voltage control converter 170 may include a control unit 172, a low pass filter 173, a transformer 174, and a capacitor 175. The low pass filter 173 may include an inductor 1731a, a capacitor 1732a, and a capacitor 1732b. One end of the inductor 1731a is connected to the positive input (V IN+ ) is connected. The other end of the inductor 1731a is connected to one end of the primary side coil of the transformer 174. One end of the capacitor 1732a is connected to one end of the inductor 1731a and the positive input (VIN+ ) is connected. The other end of the capacitor 1732a is connected to the negative input (V IN- ) is connected. One end of the capacitor 1732b is connected to the other end of the inductor 1731a. The other end of the capacitor 1732b is connected to the negative input (V IN- )connect.

[0127] The transformer 174 includes a primary coil 1741, a secondary coil 1742, and a switch 1743. The other end of the primary coil 1741 is connected to the negative input (V IN- ) is connected. One end of the secondary side coil 1742 is connected to one end of the capacitor 175 and the positive output (V OUT+ The other end of the secondary coil 1742 is connected to the other end of the capacitor 175 and the negative output (V OUT- )connect.

[0128] The driver 1744 is connected to the switch 1743. The driver 1744 turns the switch 1743 on and off. When the switch 1743 is closed, that is, when the other end of the primary side coil 1741 and the negative input (V IN- ) is in the on state, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is connected, and the DC power from the voltage control converter 170 is supplied to the constant voltage control unit 180. On the other hand, when the switch 1743 is turned off, that is, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is in a non-conducting state, the other end of the primary side coil 1741 is connected to the negative input (V IN- ) is disconnected, and the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180 is cut off.

[0129] The voltage control converter 170 may further include a voltage detector 176v and a current detector 176i. The voltage detector 176v detects a voltage value between both ends of the secondary side coil 1742 or a voltage value between the positive output and the negative output of the voltage control converter 170. The current detector 176i measures a current value between the other end of the secondary side coil 1742 and the negative output of the voltage control converter 170. The voltage value detected by the voltage detector 176v and the current value detected by the current detector 176i are notified to the control unit 172. In addition, the control unit 172 may be the same as or different from at least one of the control unit 122 and the control unit 152.

[0130] When the voltage value detected by the voltage detector 176v is greater than the threshold value, the control unit 172 controls the driver 1744 to cut off the supply of DC power from the voltage control converter 170 to the constant voltage control unit 180. The voltage value between the positive output and the negative output of the voltage control converter 170 is the sum of the output voltage value of the voltage control converter 170 and the line potential difference caused by the normal mode noise. In this embodiment, it is possible to suppress the damage of the load of the voltage control converter 170 caused by the overvoltage caused by the line potential difference caused by the normal mode noise.

[0131] [Constant pressure control unit]

[0132] Reference Fig.25 and Fig.26 . Fig.25 and Fig.26 The constant voltage control unit 180 is connected between the power storage unit 160 and at least one power consumption component 240 and can control the application of voltage (application of DC voltage) to at least one power consumption component 240 and stop thereof.

[0133] The constant voltage control unit 180 includes a control unit 182 and at least one switch 183. The positive input (V IN+ ) is connected to the power consumption component 240 via the switch 183. The negative input (V IN- ) is connected to the electric power consumption component 240. The switch 183 is controlled by the control unit 182. When the switch 183 is closed, the DC voltage from the constant voltage control unit 180 is applied to the electric power consumption component 240. When the switch 183 is opened, the application of the DC voltage from the constant voltage control unit 180 to the electric power consumption component 240 is stopped. In addition, the control unit 182 may be the same as or different from at least any one of the control unit 122, the control unit 152, and the control unit 172.

[0134] exist Fig.25 and Fig.26 In the illustrated embodiment, the plasma processing apparatus includes a plurality of power consumption components 240. The constant voltage control unit 180 includes a control unit 182 and a plurality of switches 183. The positive input (V IN+ ) is connected to a plurality of power consumption components 240 via a plurality of switches 183. The negative input (V IN- ) is connected to multiple power consumption components 240.

[0135] exist Fig.25 and Fig.26In the illustrated embodiment, the plurality of electric power consumption components 240 may include a plurality of heaters (resistance heating elements). The plurality of heaters may be disposed within the substrate support portion 11. Fig.25 In the illustrated embodiment, a plurality of resistors 260 are arranged near each of the plurality of heaters. Each of the plurality of resistors 260 has a resistance value that changes according to temperature. Each of the plurality of resistors 260 is, for example, a thermistor. Each of the plurality of resistors 260 is connected in series with a reference resistor (not shown). The constant voltage control unit 180 includes a plurality of measuring units 184. Each of the plurality of measuring units 184 can apply a reference voltage to the series connection of a corresponding resistor among the plurality of resistors 260 and a reference resistor to detect a voltage value between both ends of the resistor. Each of the plurality of measuring units 184 notifies the control unit 182 of the detected voltage value. The control unit 182 determines the temperature of the area where the corresponding heater among the plurality of heaters is arranged from the notified voltage value, and controls the application of the DC voltage to the corresponding heater so that the temperature of the area approaches the target temperature. In addition, an optical fiber thermometer may be arranged instead of the plurality of resistors 260. In this case, wiring between the plurality of resistors 260 and the plurality of measuring units 184 is not required, and therefore, the influence of high-frequency conductive noise on the electric power consumption component 240 can be eliminated.

[0136] exist Fig.26 In the illustrated embodiment, the constant voltage control unit 180 includes a voltage detector 185v and a plurality of current detectors 185i. The voltage detector 185v detects the voltage value applied to each of the plurality of heaters. The plurality of current detectors 185i measure the value of the current supplied to the corresponding heater among the plurality of heaters, that is, the current value. The plurality of measuring units 184 determine the resistance value of the corresponding heater among the plurality of heaters based on the current value detected by the corresponding current detector among the plurality of current detectors 185i and the voltage value detected by the voltage detector 185v. The control unit 182 determines the temperature of each of the plurality of areas where the plurality of heaters are respectively configured based on the resistance value detected by each of the plurality of heaters. The control unit 182 controls the application of the DC voltage to each of the plurality of heaters so that the temperature of each of the plurality of areas approaches the target temperature.

[0137] [Sharing of Power Storage Units of Multiple Plasma Processing Devices]

[0138] Reference Figure 27 to Figure 33 . Fig. 27 is a diagram showing a plasma processing system according to an exemplary embodiment. Figure 28 to Figure 33 Each of the drawings is a diagram partially showing a structure of a plasma processing system according to an exemplary embodiment. Figure 27 to Figure 33The plasma processing system (hereinafter referred to as "system PS") shown in FIG. 1 includes a plurality of plasma processing apparatuses 100G. Figure 7 The system PS will be described from the viewpoint of differences from the plasma processing apparatus 100E shown.

[0139] exist Fig. 27 In the example shown, the system PS includes a plasma processing apparatus 100G1 (first plasma processing apparatus) and a plasma processing apparatus 100G2 (second plasma processing apparatus) as a plurality of plasma processing apparatuses 100G. The system PS may include three or more plasma processing apparatuses 100G.

[0140] In the system PS, each of the plurality of plasma processing apparatuses 100G can share the power storage unit 160 of another plasma processing apparatus 100G. That is, each of the plurality of plasma processing apparatuses 100G is configured such that the power storage unit 160 of the plasma processing apparatus 100G and the power storage unit 160 of another plasma processing apparatus 100G can be connected in parallel with respect to one or more power consumption components 240 of each of the plasma processing apparatuses 100G.

[0141] Each of the plurality of plasma processing devices 100G includes a pair of terminals Ta and Tb. The terminal Ta is connected to one of a pair of power supply lines (e.g., a positive line 160p) connecting the rectifying and smoothing unit 150 and the power storage unit 160. The terminal Tb is connected to the other of a pair of power supply lines (e.g., a negative line 160m) connecting the rectifying and smoothing unit 150 and the power storage unit 160.

[0142] A pair of terminals Ta and Tb are arranged in a non-decompression space in the ground frame 110. The ground frame 110 has an opening 110w for exposing a pair of terminals Ta and Tb outside the ground frame 110. Through the opening 110w, the pair of terminals Ta and Tb in the ground frame 110 can be accessed. The terminal Ta of each of the plurality of plasma processing devices 100G is connected to the terminal Ta of another plasma processing device in the plurality of plasma processing devices 100G via a first wiring extending through the opening 110w. The first wiring is arranged at a distance greater than the insulation distance from the ground frame 110. The terminal Tb of each of the plurality of plasma processing devices 100G is connected to the terminal Tb of another plasma processing device in the plurality of plasma processing devices 100G via a second wiring extending through the opening 110w. Thus, the power storage units 160 of the plurality of plasma processing devices 100G can be connected in parallel. The second wiring is arranged at a distance greater than the insulation distance from the ground frame 110.

[0143] In one embodiment, the power storage units 160 of the plurality of plasma processing apparatuses 100G are connected in parallel via at least one backflow prevention switch 162 capable of switching the direction of the backflow of the allowable electric power between them. Figure 27 to Figure 33 In the example shown, the plasma processing apparatus 100G1 and the plasma processing apparatus 100G2 each include a backflow prevention switch 162. The power storage unit 160 of the plasma processing apparatus 100G1 and the power storage unit 160 of the plasma processing apparatus 100G2 are connected in parallel via the backflow prevention switch 162 of the plasma processing apparatus 100G1 and the backflow prevention switch 162 of the plasma processing apparatus 100G2.

[0144] The backflow prevention switch 162 may also be disposed in the non-decompression space of a corresponding plasma processing device among the plurality of plasma processing devices 100G. Alternatively, the backflow prevention switch 162 may also be disposed outside the grounding frame 110 of each of the plurality of plasma processing devices 100G. Fig.29 As shown in FIG. 1 , each of the plurality of plasma processing apparatuses 100G includes a backflow prevention switch 162 in addition to the rectifying and smoothing unit 150. Alternatively, the plasma processing apparatus 100G may include a backflow prevention switch 162. Fig.30 As shown, the rectifying and smoothing unit 150 of each of the plurality of plasma processing apparatuses 100G includes the backflow prevention switch 162 . That is, the backflow prevention switch 162 may be a part of the rectifying and smoothing unit 150 and may be built in the rectifying and smoothing unit 150 .

[0145] like Figure 29 to Figure 31 As shown, the anti-backflow switch 162 includes a terminal 162a and a terminal 162b. Figure 29 to Figure 31 In the example, terminal 162a is terminal Ta. Terminal 162b is connected to one of a pair of power supply lines (for example, positive line 160p) that connect the rectifying and smoothing unit 150 and the power storage unit 160 to each other. The backflow prevention switch 162 is configured as a switch that can switch the connection between terminal 162a and terminal 162b among connection via diode 1621, connection via diode 1622, and connection via electrical path 1623. Figure 29 to Figure 31 In the example, the terminal 162a and the terminal 162b of the backflow prevention switch 162 are connected to the positive line 160p, but the terminal 162a and the terminal 162b may be connected to the negative line 160m. When the terminal 162a and the terminal 162b are connected to the negative line 160m, the backflow prevention switch 162 can also perform the same switching action as the above-mentioned switching action.

[0146] The diode 1621 is provided in a direction that can prevent electric power from flowing back from one of the two storage units 160 connected in parallel (e.g., the storage unit 160 of the plasma processing device 100G1) to the other (e.g., the storage unit 160 of the plasma processing device 100G2). The diode 1622 is provided in a direction that can prevent electric power from flowing back from the other of the two storage units 160 connected in parallel (e.g., the storage unit 160 of the plasma processing device 100G2) to one (e.g., the storage unit 160 of the plasma processing device 100G1). The electric path 1623 can allow the bidirectional flow of electric power between the two storage units 160 connected in parallel. The electric path 1623 does not include a diode.

[0147] In one embodiment, it may be Fig.29 or Fig.30 As shown, the terminal 162a and the terminal 162b of the backflow prevention switch 162 of the plasma processing apparatus 100G1 are connected via a diode 1621. In addition, the terminal 162a and the terminal 162b of the backflow prevention switch 162 of the plasma processing apparatus 100G2 may be connected via an electrical path 1623. In this case, it is possible to suppress the backflow of electric power from the power storage unit 160 of the plasma processing apparatus 100G1 to the power storage unit 160 of the plasma processing apparatus 100G2. In other words, it is possible to allow the supply of electric power from the power storage unit 160 of the plasma processing apparatus 100G2 to the power storage unit 160 of the plasma processing apparatus 100G1, but it is possible to suppress the supply of electric power from the power storage unit 160 of the plasma processing apparatus 100G1 to the power storage unit 160 of the plasma processing apparatus 100G2. In this embodiment, the plasma processing apparatus 100G1 is a master device, and the plasma processing apparatus 100G2 is a slave device. The embodiment in which the plasma processing apparatus 100G1 is a master apparatus and the plasma processing apparatus 100G2 is a slave apparatus can be used in the following first to third situations.

[0148] The first situation is a situation where the load variation of the power consumption components of the plasma processing device 100G1 is greater than the load variation of the power consumption components of the plasma processing device 100G2. A specific example of the first situation is the following situation: Fig.28As shown, in the plasma processing apparatus 100G2, the power consuming component supplied with power from the power storage unit 160 is only the power consuming component 240b, but in the plasma processing apparatus 100G1, the power consuming component supplied with power from the power storage unit 160 can be switched from one of the power consuming components 240a and the power consuming component 240c to both, or from both to one. In this case, a load change occurs in the plasma processing apparatus 100G1. When a load change occurs, the output voltage of the power storage unit 160 of the plasma processing apparatus 100G1 may change. However, in Fig.29 or Fig.30 In the illustrated embodiment, the power storage unit 160 of the plasma processing apparatus 100G2 is connected in parallel with the power storage unit 160 of the plasma processing apparatus 100G1, so the combined electrostatic capacitance of these power storage units 160 is large. Therefore, it is possible to suppress the fluctuation of the output voltage of the power storage unit 160 of the plasma processing apparatus 100G1 caused by the load fluctuation.

[0149] The second case is a case where the power level of the high frequency electric power such as the first RF signal and / or the second RF signal generated by the high frequency power source 300 of the plasma processing device 100G1 is greater than the power level of the high frequency electric power generated by the high frequency power source 300 of the plasma processing device 100G2. In addition, the third case is a case where the electric power output from the power storage unit 160 of the plasma processing device 100G1 is greater than the electric power output from the power storage unit 160 of the plasma processing device 100G2.

[0150] In another embodiment, it may be Fig.31 As shown, the terminal 162a and the terminal 162b of the backflow prevention switch 162 of the plasma processing device 100G1 are connected via the electrical path 1623. In addition, the terminal 162a and the terminal 162b of the backflow prevention switch 162 of the plasma processing device 100G2 may also be connected via the electrical path 1623. In this embodiment, electric power can be supplied bidirectionally between the power storage unit 160 of the plasma processing device 100G1 and the power storage unit 160 of the plasma processing device 100G2. In this embodiment, the power storage unit 160 of the plasma processing device 100G1 and the power storage unit 160 of the plasma processing device 100G2 are connected in parallel, so the combined electrostatic capacitance of these power storage units 160 is large. Therefore, the change of the output voltage of the power storage unit 160 of the plasma processing device 100G1 caused by the load change can be suppressed. In addition, the change of the output voltage of the power storage unit 160 of the plasma processing device 100G2 caused by the load change can be suppressed.

[0151] like Figure 29 to Figure 32As shown, a pair of terminals Ta and Tb may be provided by the anti-backflow switch 162. In this case, the terminal Ta may be the terminal 162a. Alternatively, the anti-backflow switch 162 may be disposed outside the ground frame 110, and the pair of terminals Ta and Tb may be provided as shown in FIG. Fig.33 As shown, the backflow prevention switch 162 is provided in the non-decompression space in the ground frame 110 as a different element from the backflow prevention switch 162. In this case, the pair of terminals Ta and Tb are connected to the backflow prevention switch 162 provided outside the ground frame 110.

[0152] In any embodiment, the pair of terminals Ta and Tb can be provided in the ground frame 110 at a distance greater than the insulation distance from the ground frame 110. In addition, when the power storage unit 160 in each of the plurality of plasma processing apparatuses 100G is not connected in parallel with the power storage unit 160 of other plasma processing apparatuses, as shown in FIG. Fig.32 and Fig.33 As shown, the opening 110w is closed by a metal shielding member 110c that can be opened and closed. When the opening 110w is closed by the shielding member 110c, the shielding member 110c is electrically connected to the ground frame 110. The shielding member 110c constitutes a part of the ground frame 110.

[0153] Below, refer to Fig.34 . Fig.34 FIG. 1 is a diagram showing a state of charging of a power storage unit in a plasma processing system according to an exemplary embodiment. Fig.34 As shown, the power storage units 160 of the plurality of plasma processing apparatuses 100G can be charged by a DC stabilized power supply 500 disposed outside the ground frame 110 (ie, the space 110a). The DC stabilized power supply 500 is connected to a pair of terminals Ta and Tb via a pair of wires extending through the opening 110w.

[0154] Below, refer to Fig.35 . Fig.35 FIG. 1 is a diagram showing a state of a power storage unit in a plasma processing system according to an exemplary embodiment during discharge. Fig.35 As shown, the electric power of the power storage unit 160 of each of the plurality of plasma processing devices 100G can be released (discharged) to the discharge load 600 arranged outside the ground frame 110 (i.e., the space 110a). The discharge load 600 is connected to a pair of terminals Ta and Tb via a pair of wirings extending through the opening 110w. One of the pair of wirings can be connected to the discharge load 600 via a switch 610. A fan 602 for cooling the discharge load 600 can be installed.

[0155] Fig.36 FIG. 1 is a timing diagram related to the discharge of the power storage unit in the plasma processing system according to an exemplary embodiment. Fig.36 As shown, during the discharge process of the power storage unit 160, the voltage value of the power storage unit 160 increases from the voltage value V at the start of the discharge of the power storage unit 160. S The discharge of the power storage unit 160 is reduced when the voltage value of the power storage unit 160 reaches the threshold value V TH Time point t F Finished and stopped. Threshold V TH For example, the threshold V is set to a value that does not cause any impact on the human body and does not start the control unit 152. TH For example, it can be set to 2.5V.

[0156] Below, refer to Fig.37 . Fig.37 is a diagram showing a plasma processing system according to another exemplary embodiment. Fig.37 The illustrated system PS includes plasma processing apparatuses 100G1, 100G2, and 100G3. The power storage unit 160 of the plasma processing apparatus 100G1, the power storage unit 160 of the plasma processing apparatus 100G2, and the power storage unit 160 of the plasma processing apparatus 100G3 are connected in parallel.

[0157] The power storage unit 160 of the plasma processing apparatus 100G1 is connected in parallel with the power storage unit 160 of the plasma processing apparatus 100G2 via the anti-backflow switch 162B of the plasma processing apparatus 100G1 and the anti-backflow switch 162A of the plasma processing apparatus 100G2. The power storage unit 160 of the plasma processing apparatus 100G2 is connected in parallel with the power storage unit 160 of the plasma processing apparatus 100G3 via the anti-backflow switch 162B of the plasma processing apparatus 100G2 and the anti-backflow switch 162A of the plasma processing apparatus 100G3. The anti-backflow switch 162B is also connected to the power storage unit 160 of the plasma processing apparatus 100G3. The anti-backflow switch 162A and the anti-backflow switch 162B in each of the plasma processing apparatus 100G1, the plasma processing apparatus 100G2, and the plasma processing apparatus 100G3 are configured in the same manner as the anti-backflow switch 162 described above.

[0158] exist Fig.37In the illustrated system PS, the discharge load 600 can be connected to a pair of terminals Ta and Tb of the backflow prevention switch 162B of the plasma processing apparatus 100G3 via a pair of wirings extending through the opening 110w. In this case, the connection between the terminal 162a and the terminal 162b is set in the backflow prevention switch 162A and the backflow prevention switch 162B in each of the plasma processing apparatus 100G1, the plasma processing apparatus 100G2, and the plasma processing apparatus 100G3 so as to allow electric power to flow from the power storage unit 160 of these plasma processing apparatuses to the discharge load 600. Thus, the power storage unit 160 of each of the plasma processing apparatus 100G1, the plasma processing apparatus 100G2, and the plasma processing apparatus 100G3 can be discharged to the single discharge load 600.

[0159] In addition, Fig.37 In the illustrated system PS, a pair of terminals Ta and Tb of the backflow prevention switch 162B of the plasma processing apparatus 100G3 can be connected to the DC regulated power supply 500 via a pair of wirings extending through the opening 110w. In this case, in the backflow prevention switch 162A and the backflow prevention switch 162B in each of the plasma processing apparatus 100G1, the plasma processing apparatus 100G2, and the plasma processing apparatus 100G3, the connection between the terminal 162a and the terminal 162b is set in a manner that allows electric power to flow from the DC regulated power supply 500 to these plasma processing apparatuses. Thus, the power storage units 160 of the plasma processing apparatuses 100G1, 100G2, and 100G3 can be charged collectively by a single DC regulated power supply 500.

[0160] Various exemplary embodiments have been described above, but the present invention is not limited to the exemplary embodiments described above, and various additions, omissions, substitutions, and changes may be made. In addition, elements in different embodiments may be combined to form other embodiments.

[0161] Here, various exemplary embodiments included in the present invention are described in the following [E1] to [E110].

[0162] [E1]

[0163] A plasma processing device, characterized in that it comprises:

[0164] a first plasma processing device; and

[0165] a second plasma processing device,

[0166] The first plasma processing device and the second plasma processing device each include:

[0167] a plasma processing chamber;

[0168] a substrate support disposed within the plasma processing chamber;

[0169] A high frequency power source capable of generating high frequency electrical power;

[0170] an electrode or antenna electrically connected to the high frequency power source and capable of receiving the high frequency electric power to generate plasma from a gas in the plasma processing chamber;

[0171] an electric power consumption component disposed in the plasma processing chamber or in the substrate support;

[0172] a ground frame which is grounded and surrounds the substrate support portion together with the plasma processing chamber;

[0173] an electric storage unit electrically connected to the electric power consumption component and arranged in a space surrounded by the ground frame;

[0174] a power receiving coil electrically connected to the power storage unit and capable of receiving electric power from the power feeding coil through electromagnetic induction coupling; and

[0175] a rectifying and smoothing unit disposed in the space surrounded by the ground frame, comprising a rectifying circuit connected to the power receiving coil and a smoothing circuit connected between the rectifying circuit and the power storage unit,

[0176] The first plasma processing apparatus and the second plasma processing apparatus are each configured such that, for the electric power consumption component of the plasma processing apparatus, the power storage unit of the plasma processing apparatus can be connected in parallel with the power storage unit of the other of the first plasma processing apparatus and the second plasma processing apparatus.

[0177] [E2]

[0178] The plasma processing device according to E1 is characterized in that: one of the first plasma processing device and the second plasma processing device or the first plasma processing device and the second plasma processing device each further include an anti-backflow switch, which is capable of switching the direction of the allowable backflow of electric power between the power storage part of the plasma processing device and the power storage part of the other plasma processing device.

[0179] [E3]

[0180] The plasma processing device according to E2 is characterized in that: the anti-backflow switch is capable of selectively switching the connection between the power storage part of the first plasma processing device and the power storage part of the second plasma processing device between the following connections: connection via a first diode arranged in a manner capable of preventing electric power from flowing back from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device, connection via a second diode arranged in a manner capable of preventing electric power from flowing back from the power storage part of the second plasma processing device to the power storage part of the first plasma processing device, and connection via an electrical path that allows electric power to flow in both directions between the power storage part of the first plasma processing device and the power storage part of the second plasma processing device.

[0181] [E4]

[0182] The plasma processing device according to E2 or E3 is characterized in that the first plasma processing device and the second plasma processing device each include the anti-backflow switch in addition to the rectifying and smoothing part.

[0183] [E5]

[0184] The plasma processing device described in E2 or E3 is characterized in that the rectifying and smoothing section of each of the first plasma processing device and the second plasma processing device includes the anti-backflow switch.

[0185] [E6]

[0186] The plasma processing device according to any one of E2 to E5 is characterized in that: when the load change of the power consumption component of the first plasma processing device is greater than the load change of the power consumption component of the second plasma processing device, the anti-backflow switch is set to prevent backflow from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device.

[0187] [E7]

[0188] The plasma processing device according to any one of E2 to E5 is characterized in that: when the power level of the high-frequency electric power generated by the high-frequency power supply of the first plasma processing device is greater than the power level of the high-frequency electric power generated by the high-frequency power supply of the second plasma processing device, the anti-backflow switch is set to prevent backflow from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device.

[0189] [E8]

[0190] The plasma processing device according to any one of E2 to E5 is characterized in that: when the electric power output from the power storage part of the first plasma processing device is greater than the electric power output from the power storage part of the second plasma processing device, the anti-backflow switch is set to prevent backflow from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device.

[0191] [E9]

[0192] The plasma processing device described in any one of E1 to E8 is characterized in that: the first plasma processing device and the second plasma processing device each include a pair of terminals, and the pair of terminals are arranged in the ground frame of the plasma processing device and separated from the ground frame by an insulating distance or more, so as to connect the power storage part of the plasma processing device in parallel with the power storage part of the other plasma processing device.

[0193] [E10]

[0194] The plasma processing device according to E9 is characterized in that:

[0195] The grounding frame of each of the first plasma processing device and the second plasma processing device comprises:

[0196] an opening for exposing the pair of terminals outside the ground frame; and

[0197] A metal shielding member capable of opening and closing the opening.

[0198] It should be understood from the above description that the various embodiments of the present invention are described in this specification for the purpose of illustration, and various changes can be made without departing from the scope and spirit of the present invention. Therefore, the various embodiments disclosed in this specification are not intended to be limited, and the true scope and spirit are represented by the attached claims.

[0199] Description of Reference Numerals

[0200] PS…plasma processing system, 1, 100G…plasma processing device, 10…chamber, 11…substrate supporting part, 110…ground frame, 120…power feeding part, 130…power feeding coil part, 131…power feeding coil, 140…power receiving coil part, 141…power receiving coil, 150…rectifying and smoothing part, 160…power storage part, 162…backflow prevention switch, 170…voltage control converter, 180…constant voltage control part, 240…electric power consumption component, 300…high frequency power supply.

Claims

1. A plasma processing device, characterized in that: include: a first plasma processing device; and a second plasma processing device, The first plasma processing device and the second plasma processing device each include: a plasma processing chamber; a substrate support disposed within the plasma processing chamber; A high frequency power source capable of generating high frequency electrical power; an electrode or antenna electrically connected to the high frequency power source and capable of receiving the high frequency electric power to generate plasma from a gas in the plasma processing chamber; an electric power consumption component disposed in the plasma processing chamber or in the substrate support; a ground frame which is grounded and surrounds the substrate support portion together with the plasma processing chamber; an electric storage unit electrically connected to the electric power consumption component and arranged in a space surrounded by the ground frame; a power receiving coil electrically connected to the power storage unit and capable of receiving electric power from the power feeding coil through electromagnetic induction coupling; and a rectifying and smoothing unit disposed in the space surrounded by the ground frame, comprising a rectifying circuit connected to the power receiving coil and a smoothing circuit connected between the rectifying circuit and the power storage unit, The first plasma processing apparatus and the second plasma processing apparatus are each configured such that, for the electric power consumption component of the plasma processing apparatus, the power storage unit of the plasma processing apparatus can be connected in parallel with the power storage unit of the other of the first plasma processing apparatus and the second plasma processing apparatus.

2. The plasma processing device according to claim 1, wherein: One of the first plasma processing device and the second plasma processing device or the first plasma processing device and the second plasma processing device each further include an anti-backflow switch capable of switching the direction of the allowable backflow of electric power between the power storage part of the plasma processing device and the power storage part of the other plasma processing device.

3. The plasma processing device according to claim 2, wherein: The anti-backflow switch is capable of selectively switching the connection between the power storage part of the first plasma processing device and the power storage part of the second plasma processing device between the following connections: connection via a first diode arranged in a manner capable of preventing electric power from flowing back from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device, connection via a second diode arranged in a manner capable of preventing electric power from flowing back from the power storage part of the second plasma processing device to the power storage part of the first plasma processing device, and connection via an electrical path that allows electric power to flow in both directions between the power storage part of the first plasma processing device and the power storage part of the second plasma processing device.

4. The plasma processing apparatus according to claim 2, wherein: Each of the first plasma processing apparatus and the second plasma processing apparatus includes the backflow prevention switch in addition to the rectifying and smoothing unit.

5. The plasma processing apparatus according to claim 2, wherein: The rectifying and smoothing section of each of the first plasma processing apparatus and the second plasma processing apparatus includes the backflow prevention switch.

6. The plasma processing apparatus according to any one of claims 2 to 5, characterized in that: When the load variation of the power consumption component of the first plasma processing device is greater than the load variation of the power consumption component of the second plasma processing device, the anti-backflow switch is set to prevent backflow from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device.

7. The plasma processing apparatus according to any one of claims 2 to 5, characterized in that: When the power level of the high-frequency electric power generated by the high-frequency power supply of the first plasma processing device is greater than the power level of the high-frequency electric power generated by the high-frequency power supply of the second plasma processing device, the anti-backflow switch is set to prevent backflow from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device.

8. The plasma processing apparatus according to any one of claims 2 to 5, characterized in that: When the electric power output from the power storage part of the first plasma processing device is greater than the electric power output from the power storage part of the second plasma processing device, the backflow prevention switch is set to prevent backflow from the power storage part of the first plasma processing device to the power storage part of the second plasma processing device.

9. The plasma processing apparatus according to any one of claims 1 to 5, characterized in that: The first plasma processing device and the second plasma processing device each include a pair of terminals, which are arranged in the ground frame of the plasma processing device at a distance greater than the insulation distance from the ground frame to connect the power storage part of the plasma processing device in parallel with the power storage part of the other plasma processing device.

10. The plasma processing apparatus according to claim 9, wherein: The grounding frame of each of the first plasma processing device and the second plasma processing device comprises: an opening for exposing the pair of terminals outside the ground frame; and A metal shielding member capable of opening and closing the opening.

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