Ultrasonic imaging device, driving method and ultrasonic imaging equipment

Abstract

The invention discloses an ultrasonic imaging device, a driving method and ultrasonic imaging equipment. The ultrasonic imaging device comprises a substrate, a driving circuit layer and an ultrasonic transduction unit. The driving circuit layer is located on one side of the substrate. The ultrasonic transduction unit is located on the side, away from the substrate, of the drive circuit layer and electrically connected with the drive circuit layer. The ultrasonic transduction unit comprises a transmitting electrode, a piezoelectric layer and a receiving electrode which are arranged in a laminated mode. Wherein the emission electrode comprises a plurality of first annular patterns, any two of the plurality of first annular patterns are coaxially arranged, and every two adjacent first annular patterns are arranged at intervals. The ultrasonic focusing effect can be improved, and the ultrasonic signal intensity is enhanced.

Description

Technical Field

[0001] The present invention relates to the technical field of ultrasonic imaging, and in particular to an ultrasonic imaging device and a driving method, and an ultrasonic imaging device. Background Art

[0002] Ultrasonic imaging technology uses ultrasonic waves (sound waves with a frequency higher than 20kHz) for imaging and is widely used in medical diagnosis, industrial inspection, fingerprint recognition and other fields.

[0003] At present, ultrasonic imaging technology uses piezoelectric ultrasonic imaging devices to transmit and receive ultrasonic waves. In traditional piezoelectric ultrasonic imaging devices, the ultrasonic transducer unit is a stacked bottom electrode, piezoelectric layer and top electrode structure, and the ultrasonic emission and reception intensity is low, which affects the imaging quality. Summary of the invention

[0004] The present invention provides an ultrasonic imaging device and a driving method, and ultrasonic imaging equipment, which are used to increase the emission intensity of ultrasonic waves and improve the imaging quality.

[0005] A first aspect of the present invention provides an ultrasonic imaging device, comprising:

[0006] substrate;

[0007] A driving circuit layer, located on one side of the substrate;

[0008] The ultrasonic transducer unit is located on the side of the driving circuit layer away from the substrate and is electrically connected to the driving circuit layer; the ultrasonic transducer unit includes a transmitting electrode, a piezoelectric layer and a receiving electrode which are stacked;

[0009] The emitting electrode includes a plurality of first annular patterns, any two of the plurality of first annular patterns are coaxially arranged, and two adjacent first annular patterns are spaced apart.

[0010] In some embodiments, for the same transmitting electrode, the plurality of first annular patterns are respectively connected to a transmitting signal line, and the transmitting signal line is configured to provide transmitting signals to the plurality of first annular patterns in sequence from outside to inside according to a time sequence.

[0011] In some embodiments, for the same transmitting electrode, the shape of the first annular pattern located in the innermost layer is set to be a solid shape.

[0012] In some embodiments, the receiving electrode includes a plurality of second annular patterns, any two of the plurality of second annular patterns are coaxially arranged, and two adjacent second annular patterns are spaced apart;

[0013] The second annular pattern corresponds to the first annular pattern one-to-one, and an orthographic projection of the second annular pattern on the substrate at least partially overlaps with an orthographic projection of the corresponding first annular pattern on the substrate.

[0014] In some embodiments, the driving circuit layer includes a first thin film transistor; the first thin film transistor corresponds to the receiving electrode one by one;

[0015] For a same receiving electrode, the plurality of second ring-shaped patterns are all electrically connected to the first thin film transistor corresponding to the receiving electrode;

[0016] The second ring-shaped pattern is electrically connected to the source electrode of the first thin film transistor;

[0017] Alternatively, the second ring-shaped pattern is electrically connected to the gate of the first thin film transistor.

[0018] In some embodiments, the receiving electrode is located between the piezoelectric layer and the driving circuit layer; and the transmitting electrode is located on a side of the piezoelectric layer away from the driving circuit layer.

[0019] In some embodiments, the ultrasonic imaging device further comprises a first insulating layer; the first insulating layer is located between the receiving electrode and the piezoelectric layer;

[0020] The emitter electrode is in direct contact with the piezoelectric layer.

[0021] In some embodiments, the piezoelectric layer includes a plurality of third annular patterns, any two of the plurality of third annular patterns are coaxially arranged, and two adjacent third annular patterns are spaced apart;

[0022] The third annular pattern corresponds to the first annular pattern one-to-one, and an orthographic projection of the third annular pattern on the substrate at least partially overlaps with an orthographic projection of the corresponding first annular pattern on the substrate.

[0023] In some embodiments, the ultrasonic imaging device further includes a second insulating layer; the second insulating layer is located between the ultrasonic transducer unit and the driving circuit layer;

[0024] The second insulating layer is provided with a plurality of cavities; the cavities correspond to the first annular patterns, and the orthographic projections of the cavities on the substrate are located within the orthographic projections of the corresponding first annular patterns on the substrate.

[0025] In some embodiments, for one transmitting electrode, the number of the first annular patterns is greater than or equal to three.

[0026] A second aspect of the present invention provides a driving method, which is applied to any of the above-mentioned ultrasonic imaging devices, and the driving method comprises:

[0027] For the same transmitting electrode, transmitting signals are provided to the plurality of first annular patterns in sequence from outside to inside according to a time sequence.

[0028] A third aspect of the present invention provides an ultrasonic imaging device comprising any one of the ultrasonic imaging devices described above.

[0029] The beneficial effects of the present invention are as follows:

[0030] The present invention provides an ultrasonic imaging device and a driving method, and an ultrasonic imaging device. The ultrasonic imaging device includes: a substrate, a driving circuit layer, and an ultrasonic transducer unit. The driving circuit layer is located on one side of the substrate. The ultrasonic transducer unit is located on the side of the driving circuit layer away from the substrate, and is electrically connected to the driving circuit layer. The ultrasonic transducer unit includes a transmitting electrode, a piezoelectric layer, and a receiving electrode arranged in a stacked manner. Among them, the transmitting electrode includes a plurality of first annular patterns, any two of the plurality of first annular patterns are coaxially arranged, and two adjacent first annular patterns are arranged at intervals. By providing a transmitting signal to the first annular pattern in sequence from the outside to the inside, driving the piezoelectric layer to vibrate and transmit ultrasonic waves in sequence from the outside to the inside, it is possible to improve the focusing effect of ultrasonic waves and enhance the strength of ultrasonic signals. BRIEF DESCRIPTION OF THE DRAWINGS

[0031] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the embodiments of the present invention will be briefly introduced below. Obviously, the accompanying drawings introduced below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0032] Figure 1 One of the schematic cross-sectional structure diagrams of the ultrasonic imaging device provided in an embodiment of the present invention;

[0033] Figure 2 One of the schematic diagrams of the top view structure of the emitting electrode provided in an embodiment of the present invention;

[0034] Figure 3 A second schematic diagram of a top view structure of an emitting electrode provided in an embodiment of the present invention;

[0035] Figure 4 A second schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in an embodiment of the present invention;

[0036] Figure 5 The third schematic diagram of the top view structure of the emitting electrode provided in the embodiment of the present invention;

[0037] Figure 6 A timing diagram of a transmission signal provided by an embodiment of the present invention;

[0038] Figure 7 A fourth schematic diagram of a top view structure of an emitting electrode provided in an embodiment of the present invention;

[0039] Figure 8 The third schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided by the embodiment of the present invention;

[0040] Fig. 9A fourth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in an embodiment of the present invention;

[0041] Fig.10 A fifth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in an embodiment of the present invention;

[0042] Fig.11 One of the schematic diagrams of the top view structure of a single first annular pattern provided in an embodiment of the present invention;

[0043] Fig.12 The second schematic diagram of the top view structure of a single first annular pattern provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0044] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and understandable, the present invention will be further described below with reference to the accompanying drawings and examples. However, the exemplary embodiments can be implemented in various forms and should not be understood as being limited to the embodiments described herein; on the contrary, these embodiments are provided to make the present invention more comprehensive and complete, and to fully convey the concepts of the exemplary embodiments to those skilled in the art. The same figure marks in the figures represent the same or similar structures, and thus their repeated descriptions will be omitted. The words expressing position and direction described in the present invention are all explained using the accompanying drawings as examples, but changes can be made as needed, and the changes made are all included in the scope of protection of the present invention. The drawings of the present invention are only used to illustrate the relative position relationship and do not represent the true proportions.

[0045] Ultrasonic imaging technology uses ultrasonic waves (sound waves with a frequency higher than 20kHz) for imaging and is widely used in medical diagnosis, industrial testing, fingerprint recognition and other fields.

[0046] At present, ultrasonic imaging technology uses piezoelectric ultrasonic imaging devices to transmit and receive ultrasonic waves. In traditional piezoelectric ultrasonic imaging devices, the ultrasonic transducer unit is a stacked bottom electrode, piezoelectric layer and top electrode structure, and the ultrasonic emission and reception intensity is low, which affects the imaging quality.

[0047] Figure 1 One of the schematic cross-sectional structure diagrams of the ultrasonic imaging device provided in an embodiment of the present invention; Figure 2 This is one of the schematic diagrams of the top view structure of the emitting electrode provided in an embodiment of the present invention.

[0048] In the embodiment of the present invention, Figure 1As shown, the ultrasonic imaging device includes a substrate 100, a driving circuit layer 200 and an ultrasonic transducer unit 300. The substrate 100 is located at the bottom of the ultrasonic imaging device, and mainly plays a supporting and bearing role. The driving circuit layer 200 is located on one side of the substrate 100, and the ultrasonic transducer unit 300 is located on the side of the driving circuit layer 200 away from the substrate 100. The ultrasonic transducer unit 300 is electrically connected to the driving circuit layer 200. A driving circuit is provided in the driving circuit layer 200, and the driving circuit is used to provide an electrical signal to the ultrasonic transducer unit 300 in the ultrasonic emission stage, drive the ultrasonic transducer unit 300 to vibrate and thereby emit ultrasonic waves, and / or receive the ultrasonic transducer unit 300 converting the ultrasonic signal into an electrical signal in the ultrasonic receiving stage.

[0049] The ultrasonic transducer unit 300 includes a stacked transmitting electrode 310, a piezoelectric layer 320, and a receiving electrode 330. In a specific implementation, the transmitting electrode 310 can be arranged between the piezoelectric layer 320 and the driving circuit layer 200, and the receiving electrode 330 can be arranged on the side of the piezoelectric layer 200 away from the driving circuit layer 200, or the receiving electrode 330 can be arranged between the piezoelectric layer 320 and the driving circuit layer 200, and the transmitting electrode 310 can be arranged on the side of the piezoelectric layer 200 away from the driving circuit layer 200, which is not limited here. The transmitting electrode 310 and the receiving electrode 330 can be made of materials with excellent conductive properties, such as metals and their alloys, which are not limited here. The piezoelectric layer 320 can be made of piezoelectric materials, such as organic piezoelectric materials such as polyvinylidene fluoride (PVDF), which are not limited here. In the ultrasonic emission stage, an electric field is applied to the piezoelectric layer 320 through the transmitting electrode 310 and the receiving electrode 330, so that the piezoelectric layer 320 can generate high-frequency vibration under the action of the inverse piezoelectric effect, thereby emitting ultrasonic waves. In the ultrasonic receiving stage, the piezoelectric layer 320 can receive ultrasonic waves and convert them into electrical signals under the action of the direct piezoelectric effect.

[0050] In the embodiment of the present invention, combined with Figure 1 and Figure 2 As shown, Figure 1 Can be regarded as Figure 2 In the cross-sectional view along the section line AA, the emitting electrode 310 includes a plurality of first annular patterns 311. Any two of the plurality of first annular patterns 311 are coaxially arranged, and two adjacent first annular patterns 311 are spaced apart.

[0051] By dividing the transmitting electrode 310 into a plurality of first annular patterns 311 spaced apart from each other, during the ultrasonic transmission stage, a transmission signal can be applied to any first annular pattern 311 alone, thereby driving the piezoelectric layer 320 in the corresponding area of ​​the first annular pattern 311 to vibrate. Figure 2As shown, the emitting electrode 310 may be divided into three first annular patterns 311 , namely an outermost first annular pattern 3111 , a middle first annular pattern 3112 , and an innermost first annular pattern 3113 . In the ultrasonic emission stage, a transmission signal may be applied to the outermost first annular pattern 3111 alone first, so as to form an electric field between the outermost first annular pattern 3111 and the receiving electrode 330, and drive the piezoelectric layer 320 in the area covered by the outermost first annular pattern 3111 to vibrate and emit ultrasonic waves; then a transmission signal may be applied to the middle first annular pattern 3112 alone, so as to form an electric field between the middle first annular pattern 3112 and the receiving electrode 330, and drive the piezoelectric layer 320 in the area covered by the middle first annular pattern 3112 to vibrate and emit ultrasonic waves; finally, a transmission signal may be applied to the innermost first annular pattern 3113 alone, so as to form an electric field between the innermost first annular pattern 3113 and the receiving electrode 330, and drive the piezoelectric layer 320 in the area covered by the innermost first annular pattern 3113 to vibrate and emit ultrasonic waves. By providing the transmission signal to the first annular pattern 3112 from the outside to the inside, and driving the piezoelectric layer 320 to vibrate and emit ultrasonic waves from the outside to the inside, the focusing effect of ultrasonic waves can be improved and the ultrasonic signal strength can be enhanced.

[0052] In the embodiment of the present invention, Figure 2 As shown, the first annular pattern 311 can be set to a circular ring shape, so as to improve the focusing effect of the ultrasound. In some embodiments, the first annular pattern 311 can also be set to other annular shapes. Figure 3 The second schematic diagram of the top view structure of the emitting electrode provided in the embodiment of the present invention. Figure 3 As shown, for example, the first annular pattern 311 can also be set to a variety of annular shapes such as a square ring, a diamond ring or an elliptical ring, which is not limited here.

[0053] In the embodiment of the present invention, the ultrasonic imaging device may include at least one ultrasonic transducer unit 300 . Figure 4 The second schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided by the embodiment of the present invention. Figure 4 As shown, the ultrasonic imaging device may include multiple ultrasonic transducer units 300. The multiple ultrasonic transducer units 300 may be arranged in an array, which is not limited here. It should be noted that in the drawings of the embodiments of the present invention, the structure of the ultrasonic imaging device is illustrated by taking one ultrasonic transducer unit 300 as an example.

[0054] Figure 5 The third schematic diagram of the top view structure of the emitting electrode provided in the embodiment of the present invention; Figure 6 A timing diagram of a transmission signal provided in an embodiment of the present invention.

[0055] In the embodiment of the present invention, Figure 5As shown, for the same transmitting electrode, each of the plurality of first annular patterns 311 is connected to a transmitting signal line L. The transmitting signal line L is configured to provide transmitting signals to the plurality of first annular patterns 3111 in sequence from outside to inside according to the timing. Figure 5 As shown, the outermost first annular pattern 3111 is connected to the first transmission signal line L1, the middle first annular pattern 3112 is connected to the second transmission signal line L2, and the innermost first annular pattern 3113 is connected to the third transmission signal line L3. Figure 6 As shown, at time t0-t1, a transmission signal is provided to the outermost first annular pattern 3111 through the first transmission signal line L1; at time t1-t2, a transmission signal is provided to the middle first annular pattern 3112 through the second transmission signal line L2; at time t2-t3, a transmission signal is provided to the outermost first annular pattern 3113 through the third transmission signal line L3.

[0056] Figure 7 The fourth schematic diagram of the top view structure of the emitting electrode provided in an embodiment of the present invention.

[0057] In some embodiments, for the same transmitting electrode, the shape of the first annular pattern located in the innermost layer is set to a solid shape. Figure 7 As shown, the innermost first annular pattern 3113 can be set to a solid shape, for example, the innermost first annular pattern 3113 can be set to a solid circle or other shapes, which are not limited here.

[0058] Figure 8 The third schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided by the embodiment of the present invention; Fig. 9 The fourth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in an embodiment of the present invention.

[0059] In some embodiments, Figure 8 and Fig. 9As shown, the receiving electrode 330 includes a plurality of second annular patterns 331. Any two of the plurality of second annular patterns 331 are coaxially arranged, and two adjacent second annular patterns 331 are arranged at intervals. The second annular pattern 331 corresponds to the first annular pattern 311 one by one, and the orthographic projection of the second annular pattern 331 on the substrate 100 overlaps at least partially with the orthographic projection of the corresponding first annular pattern 311 on the substrate 100. By dividing the receiving electrode 330 into a plurality of second annular patterns 331 corresponding to the first annular pattern 311, the isolation between adjacent second annular patterns 331 is increased, the mutual influence between the adjacent two second annular patterns 331 when the piezoelectric layer 320 vibrates is reduced, and the ultrasonic focusing effect is further improved. In a specific implementation, the orthographic projection of the second annular pattern 331 on the substrate 100 can be set to completely overlap with the orthographic projection of the corresponding first annular pattern 311 on the substrate 100, which is not limited here.

[0060] In the embodiment of the present invention, Figure 1 , Figure 8 and Fig. 9 As shown, the driving circuit layer 200 includes a first thin film transistor T1. The first thin film transistor T1 corresponds to the receiving electrode 330 one by one, and the receiving electrode 330 is electrically connected to the corresponding first thin film transistor T1. In a specific implementation, the driving circuit layer 200 includes a signal reading circuit, and the first thin film transistor T1 can be an input module of the signal reading circuit. The signal reading circuit is electrically connected to the receiving electrode 330 of the ultrasonic transducer unit through the first thin film transistor T1, so as to read the electrical signal converted from the ultrasonic wave in the ultrasonic wave receiving stage. In a specific implementation, as Figure 8 and Fig. 9 As shown, for the same receiving electrode 330 , the plurality of second ring patterns 331 are all electrically connected to the first thin film transistor T1 corresponding to the receiving electrode 330 .

[0061] In some embodiments, Figure 8 As shown, the second ring pattern 331 is electrically connected to the source S of the first thin film transistor T1, thereby forming a passive (PPS) signal reading circuit. In the passive signal reading circuit, the gate G of the first thin film transistor T1 is controlled by a separate scanning signal line. When the first thin film transistor T1 is turned on, the signal reading circuit can directly read the electrical signal input by the receiving electrode 330.

[0062] In some embodiments, Fig. 9As shown, the second ring pattern 331 is electrically connected to the gate G of the first thin film transistor T1, thereby forming an active (APS) signal reading circuit. In the active signal reading circuit, the electrical signal input by the receiving electrode 330 is used as the switching signal of the first thin film transistor T1, so that the switching state of the first thin film transistor T1 and the signal size transmitted by the first thin film transistor T1 can be controlled by the electrical signal input by the receiving electrode 330, which plays a role in signal amplification.

[0063] In some embodiments, Figure 8 and Fig. 9 As shown, the receiving electrode 330 is located between the piezoelectric layer 320 and the driving circuit layer 200, and the transmitting electrode 310 is located on the side of the piezoelectric layer 320 away from the driving circuit layer 200. Placing the receiving electrode 330 close to the driving circuit layer 200 is beneficial to the connection between the receiving electrode 330 and the first thin film transistor T1 during the manufacturing process.

[0064] In some embodiments, Figure 8 and Fig. 9 As shown, the ultrasonic imaging device further includes a first insulating layer 400. The first insulating layer 400 is located between the receiving electrode 330 and the piezoelectric layer 320. By adjusting the thickness of the first insulating layer 400, the working performance of the ultrasonic transducer can be improved. The first insulating layer 400 can be made of dielectric materials such as silicon oxide, silicon nitride, silicon oxynitride, etc., which are not limited here. The transmitting electrode 310 can be directly contacted with the piezoelectric layer 320, which is not limited here.

[0065] In some embodiments, Figure 8 and Fig. 9 As shown, the piezoelectric layer 320 includes a plurality of third annular patterns 321. Any two of the plurality of third annular patterns 321 are coaxially arranged, and two adjacent third annular patterns 321 are arranged at intervals. The third annular pattern 321 corresponds to the first annular pattern 311 one by one, and the orthographic projection of the third annular pattern 321 on the substrate 100 overlaps at least partially with the orthographic projection of the corresponding first annular pattern 311 on the substrate 100. By dividing the piezoelectric layer 320 into a plurality of third annular patterns 321 corresponding to the first annular pattern 311, the isolation between adjacent third annular patterns 321 is increased, the influence of the third annular pattern 321 on the adjacent third annular pattern 321 when vibrating is reduced, and the ultrasonic focusing effect is further improved. In a specific implementation, the orthographic projection of the third annular pattern 321 on the substrate 100 can be set to completely overlap with the orthographic projection of the corresponding first annular pattern 311 on the substrate 100, which is not limited here.

[0066] Fig.10 A fifth schematic diagram of the cross-sectional structure of the ultrasonic imaging device provided in an embodiment of the present invention; Fig.11One of the schematic diagrams of the top view structure of a single first annular pattern provided in an embodiment of the present invention; Fig.12 The second schematic diagram of the top view structure of a single first annular pattern provided in an embodiment of the present invention.

[0067] In some embodiments, Fig.10 As shown, the ultrasonic imaging device also includes a second insulating layer 500. The second insulating layer 500 is located between the ultrasonic transducer unit and the driving circuit layer 100. Specifically, the second insulating layer 500 is located between the receiving electrode 330 and the substrate 100. The second insulating layer 500 is provided with a plurality of cavities C. The cavity C corresponds to the first annular pattern 331, and the orthographic projection of the cavity C on the substrate 100 is located within the orthographic projection of the corresponding first annular pattern 331 on the substrate 100. By providing the cavity C, the vibration intensity of the ultrasonic ring energy unit can be further improved, thereby improving the emission intensity and receiving performance of the ultrasonic transducer. In specific implementation, the second insulating layer 500 can be made of organic materials such as resin, and the organic material usually has a certain elasticity, which is conducive to enhancing the vibration performance.

[0068] In some embodiments, Fig.11 As shown, the shape of the orthographic projection of the cavity C on the substrate 100 can be set to be a ring. In specific implementation, a ring-shaped cavity C can be correspondingly set below a first ring-shaped pattern 331.

[0069] In some embodiments, Fig.12 As shown, the shape of the positive projection of the cavity C on the substrate 100 can be set to be a fan-shaped ring, and one fan-shaped ring can be regarded as a part of the ring. In specific implementation, multiple fan-shaped cavities C can be correspondingly arranged under a first ring pattern 331, and the multiple fan-shaped cavities C are evenly distributed along the circumferential direction. This is not limited here.

[0070] In some embodiments, for one transmitting electrode 310, the number of first annular patterns 311 can be set to be greater than or equal to 3, for example, 3, 4, 5, 6, etc., which is not limited here. In some embodiments, for one transmitting electrode 310, the number of first annular patterns 311 can also be controlled to be less than or equal to a set number, for example, less than or equal to 8, or less than or equal to 10, so as to reduce the manufacturing difficulty and ensure that the ultrasonic transducer has sufficient vibration strength. In specific implementation, for one transmitting electrode 310, the number of first annular patterns 311 can be set according to actual conditions, which is not limited here.

[0071] In some embodiments, Fig.10 As shown, the driving circuit layer 200 may specifically include the following film layer structures:

[0072] The buffer layer 201 is located between the substrate 100 and the ultrasonic transducer unit. In a specific implementation, the buffer layer 201 can be configured as a structure in which a plurality of buffer layers (Buffer) and a plurality of barrier layers (Barrier) are stacked, which is not limited here.

[0073] The semiconductor layer 202 is located on the side of the buffer layer 201 away from the substrate 100. The semiconductor layer 202 includes an active layer of a first thin film transistor. The semiconductor layer 202 may include at least one of semiconductor materials such as an oxide semiconductor, a low temperature polysilicon (LTPS) semiconductor, etc., so as to form an oxide thin film transistor (Oxide-Thin Film Transistor, Oxide-TFT) and / or a low temperature polysilicon thin film transistor (Low Temperature Poly-Silicon-Thin Film Transistor, LTPS-TFT), which is not limited here.

[0074] The gate insulating layer 203 is located on the side of the semiconductor layer 202 away from the substrate 100. The gate insulating layer (Gate Insulation Layer, GI for short) is made of insulating material and plays the role of insulating isolation, controlling threshold voltage and reducing leakage current.

[0075] The gate metal layer 204 is located on the side of the gate insulating layer 203 facing away from the substrate 100. The gate metal layer 204 includes a gate of the first thin film transistor.

[0076] The interlayer dielectric layer 205 is located on the side of the gate metal layer 204 away from the substrate 100. The interlayer dielectric layer (ILD) can play the role of insulation isolation, planarization and reducing parasitic capacitance.

[0077] The first source-drain metal layer 206 is located on a side of the interlayer dielectric layer 205 away from the substrate 100. The first source-drain metal layer 206 includes a source and a drain of the first thin film transistor.

[0078] The planarization layer 207 is located on the side of the first source / drain metal layer 206 facing away from the substrate 100. The planarization layer 207 can play a role in planarization and the like.

[0079] The second source-drain metal layer 208 is located on the side of the planar layer 207 away from the substrate 100. The ultrasonic transducer unit can be electrically connected to the first thin film transistor through the second source-drain metal layer 208. The second source-drain metal layer 208 can also be used to set the routing of other signal lines, which will not be described in detail here.

[0080] The third insulating layer 209 is located on the side of the second source / drain metal layer 208 away from the planar layer 207. The third insulating layer 209 can be made of the same or similar material as the first insulating layer 400, which is not limited here.

[0081] In a specific implementation, in addition to the above film layers, the driving circuit layer 200 may also include other film layers. Alternatively, the driving circuit layer 200 may also reduce one or more of the above film layers, which is not limited here.

[0082] In some embodiments, Fig.10 As shown, the ultrasonic imaging device further includes an impedance matching layer 600. The impedance matching layer 600 is located on the side of the ultrasonic transducer unit facing away from the substrate 100. The impedance matching layer 600 is used to reduce the reflection between the ultrasonic imaging device and the surface of the object to be detected, thereby improving the transmission efficiency of the signal and the performance of the transducer. The material of the impedance matching layer 600 can be selected according to the material of the object to be detected, and is not limited here.

[0083] During specific implementation, the ultrasonic imaging device may further include other structures necessary for realizing specific functions. During specific implementation, the components of the ultrasonic imaging device may be adjusted according to actual needs, which will not be elaborated here.

[0084] The present invention also provides a driving method, which is applied to the ultrasonic imaging device provided in any of the above embodiments. The method includes: for the same transmitting electrode, providing transmitting signals to multiple first annular patterns in sequence from the outside to the inside according to the timing. When implementing it specifically, reference can be made to the specific description of the relevant parts in the above ultrasonic imaging device embodiment, which will not be repeated here.

[0085] The present invention also provides an ultrasonic imaging device, including the ultrasonic imaging device provided by any of the above embodiments. Specifically, the ultrasonic imaging device can be a medical diagnostic device, an industrial detection device, a fingerprint recognition device, etc., which is not limited here. In specific implementation, the ultrasonic imaging device provided by the embodiment of the present invention has the same or similar technical effects as the ultrasonic imaging device provided by any of the above embodiments, which will not be described in detail here.

[0086] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0087] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. An ultrasonic imaging device, characterized in that: include: substrate; A driving circuit layer, located on one side of the substrate; an ultrasonic transducer unit, located on a side of the driving circuit layer away from the substrate and electrically connected to the driving circuit layer; The ultrasonic transducer unit comprises a transmitting electrode, a piezoelectric layer and a receiving electrode which are stacked; The emitting electrode includes a plurality of first annular patterns, any two of the plurality of first annular patterns are coaxially arranged, and two adjacent first annular patterns are spaced apart.

2. The ultrasonic imaging device according to claim 1, characterized in that: For the same transmitting electrode, each of the plurality of first annular patterns is connected to a transmitting signal line, and the transmitting signal line is configured to provide transmitting signals to the plurality of first annular patterns in sequence from outside to inside according to a time sequence.

3. The ultrasonic imaging device according to claim 1, characterized in that: For the same emitting electrode, the shape of the first annular pattern located in the innermost layer is set to be a solid shape.

4. The ultrasonic imaging device according to claim 1, characterized in that: The receiving electrode comprises a plurality of second annular patterns, any two of the plurality of second annular patterns are coaxially arranged, and two adjacent second annular patterns are spaced apart; The second annular pattern corresponds to the first annular pattern one by one, and an orthographic projection of the second annular pattern on the substrate at least partially overlaps with an orthographic projection of the corresponding first annular pattern on the substrate.

5. The ultrasonic imaging device according to claim 4, characterized in that: The driving circuit layer includes a first thin film transistor; the first thin film transistor corresponds to the receiving electrode one by one; For the same receiving electrode, the plurality of second ring-shaped patterns are all electrically connected to the first thin film transistor corresponding to the receiving electrode; The second ring-shaped pattern is electrically connected to the source electrode of the first thin film transistor; Alternatively, the second ring-shaped pattern is electrically connected to a gate of the first thin film transistor.

6. The ultrasonic imaging device according to claim 5, characterized in that: The receiving electrode is located between the piezoelectric layer and the driving circuit layer; the transmitting electrode is located on a side of the piezoelectric layer away from the driving circuit layer.

7. The ultrasonic imaging device according to claim 6, characterized in that: The ultrasonic imaging device further comprises a first insulating layer; the first insulating layer is located between the receiving electrode and the piezoelectric layer; The emitter electrode is in direct contact with the piezoelectric layer.

8. The ultrasonic imaging device according to claim 1, characterized in that: The piezoelectric layer includes a plurality of third annular patterns, any two of the plurality of third annular patterns are coaxially arranged, and two adjacent third annular patterns are spaced apart; The third annular pattern corresponds to the first annular pattern one by one, and an orthographic projection of the third annular pattern on the substrate at least partially overlaps with an orthographic projection of the corresponding first annular pattern on the substrate.

9. The ultrasonic imaging device according to claim 1, characterized in that: The ultrasonic imaging device further comprises a second insulating layer; the second insulating layer is located between the ultrasonic transducer unit and the driving circuit layer; The second insulating layer is provided with a plurality of cavities; the cavities correspond to the first annular patterns, and the orthographic projections of the cavities on the substrate are located within the orthographic projections of the corresponding first annular patterns on the substrate.

10. The ultrasonic imaging device according to any one of claims 1 to 8, characterized in that: For one transmitting electrode, the number of the first annular patterns is greater than or equal to three.

11. A driving method, applied to the ultrasonic imaging device according to any one of claims 1 to 10, characterized in that: include: For the same transmitting electrode, transmitting signals are provided to the plurality of first annular patterns in sequence from outside to inside according to a time sequence.

12. An ultrasonic imaging device, characterized in that: The ultrasonic imaging device comprises the ultrasonic imaging device as claimed in any one of claims 1 to 10.

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