Vibration sensor of dry-type transformer

Abstract

The invention relates to the technical field of transformer monitoring, in particular to a dry-type transformer vibration sensor which comprises a vibration sensing and monitoring module, an MCU master control module, an SRAM storage module, an LORA communication module, a battery monitoring module and a power conversion module. The MCU main control module is electrically connected with the vibration sensing monitoring module, the SRAM storage module, the LORA communication module, the battery monitoring module and the power supply conversion module, and the vibration sensing monitoring module is electrically connected with the SRAM storage module; the vibration sensing and monitoring module is used for measuring the vibration acceleration value of the transformer; the MCU main control module realizes data interaction and control of operation of the whole system; the SRAM storage module is used for storing the acceleration value; the LORA communication module realizes remote transmission of data; the battery monitoring module is used for monitoring the battery voltage; the power supply conversion module realizes conversion of system circuit level and converts voltage into voltage values required by different chips.

Description

Technical Field

[0001] The invention relates to the technical field of transformer monitoring, and in particular to a dry-type transformer vibration sensor. Background Art

[0002] The echolocation technology of acoustic waves and vibration waves has a wide range of application prospects in the power industry, especially when transformer equipment is operating normally. As the alternating current passes through the transformer windings to generate periodically changing alternating magnetic flux in the iron core, the iron core vibrates and emits a uniform humming sound. Once the iron core winding in the transformer fails or arc discharge occurs, its acoustic characteristics will also change and show certain inherent characteristics. Therefore, the vibration characteristic signal of transformer equipment can characterize the operating status of the transformer.

[0003] The existing transformer vibration monitoring methods are basically aimed at transformers above 110kV in substations. There is less vibration monitoring of dry-type transformers in 10kV distribution stations. It is impossible to detect structural problems such as displacement, looseness, wear, deformation, etc. of dry-type transformer cores, windings, and tap switches that may cause changes in the main mechanical structure of the transformer or reduce the sensitivity of fault response.

[0004] At present, the detection method of power equipment is mainly offline. However, offline detection method requires power outage. After the power outage, the state of the equipment is different from the operating state, which affects the accuracy of judgment and cannot reflect the working state, especially the mechanical performance. In addition, the offline detection method is a periodic regular experiment, not a continuous real-time working condition monitoring, and lacks more reliable information on the operating state of the equipment. Therefore, it brings greater blindness and limitations to the detection, resulting in a large waste of manpower, material and financial resources, and even unnecessary equipment damage. Summary of the invention

[0005] The technical problem to be solved by the present invention is to provide a dry-type transformer vibration sensor which can detect the online state of the transformer quickly, efficiently, safely and reliably.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is:

[0007] A dry-type transformer vibration sensor comprises a vibration sensing monitoring module, an MCU main control module, an SRAM storage module, a LORA communication module, a battery monitoring module and a power conversion module, wherein the MCU main control module is electrically connected to the vibration sensing monitoring module, the SRAM storage module, the LORA communication module, the battery monitoring module and the power conversion module respectively, the vibration sensing monitoring module is electrically connected to the SRAM storage module, the vibration sensing monitoring module is used to monitor the acceleration value generated by the vibration of the dry-type transformer, and the SRAM storage module is used to store the acceleration value monitored by the vibration sensing monitoring module.

[0008] The beneficial effects of the present invention are:

[0009] This scheme is provided with a vibration sensing monitoring module, an MCU main control module, an SRAM storage module, a LORA communication module, a battery monitoring module and a power conversion module. The MCU main control module is electrically connected to the vibration sensing monitoring module, the SRAM storage module, the LORA communication module, the battery monitoring module and the power conversion module respectively, and the vibration sensing monitoring module is electrically connected to the SRAM storage module; the vibration sensing monitoring module measures the small vibration acceleration value of the transformer; the MCU main control module realizes data interaction and control of the operation of the entire system; the SRAM storage module stores the acceleration value data; the LORA communication module realizes remote transmission of data; the battery monitoring module monitors the battery voltage; the power conversion module realizes the conversion of the system circuit level and converts the voltage into the voltage value required by different chips; the dry-type transformer vibration sensor designed in this scheme adopts an online detection method for vibration analysis of the transformer, and has no electrical connection with the entire power system (that is, a large-scale power system is not electrically connected to the primary system), and does not cause any impact on the normal operation of the power system, so that the online status of the transformer can be detected quickly, efficiently, safely and reliably. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 It is a connection block diagram of the dry-type transformer vibration sensor of the present invention;

[0011] Figure 2 A circuit schematic diagram of a vibration sensing monitoring module of a dry-type transformer vibration sensor of the present invention;

[0012] Figure 3 The circuit schematic diagram of the SRAM storage module of the dry-type transformer vibration sensor of the present invention;

[0013] Figure 4 The schematic diagram of the circuit of the LORA communication module of the dry-type transformer vibration sensor of the present invention;

[0014] Figure 5The circuit schematic diagram of the battery monitoring module of the dry-type transformer vibration sensor of the present invention;

[0015] Figure 6 The circuit schematic diagram of the power conversion module of the dry-type transformer vibration sensor of the present invention;

[0016] Figure 7 The circuit schematic diagram of the MCU main control module of the dry-type transformer vibration sensor of the present invention;

[0017] Description of labels:

[0018] 1. Vibration sensor monitoring module; 2. MCU main control module; 3. SRAM storage module; 4. LORA communication module; 5. Battery monitoring module; 6. Power conversion module. DETAILED DESCRIPTION

[0019] In order to explain the technical content, achieved objectives and effects of the present invention in detail, the following is an explanation in conjunction with the implementation modes and the accompanying drawings.

[0020] Please refer to Figure 1 , the technical solution adopted by the present invention is:

[0021] A dry-type transformer vibration sensor comprises a vibration sensing monitoring module, an MCU main control module, an SRAM storage module, a LORA communication module, a battery monitoring module and a power conversion module, wherein the MCU main control module is electrically connected to the vibration sensing monitoring module, the SRAM storage module, the LORA communication module, the battery monitoring module and the power conversion module respectively, the vibration sensing monitoring module is electrically connected to the SRAM storage module, the vibration sensing monitoring module is used to monitor the acceleration value generated by the vibration of the dry-type transformer, and the SRAM storage module is used to store the acceleration value monitored by the vibration sensing monitoring module.

[0022] From the above description, it can be seen that the beneficial effects of the present invention are:

[0023] This scheme is provided with a vibration sensing monitoring module, an MCU main control module, an SRAM storage module, a LORA communication module, a battery monitoring module and a power conversion module. The MCU main control module is electrically connected to the vibration sensing monitoring module, the SRAM storage module, the LORA communication module, the battery monitoring module and the power conversion module respectively, and the vibration sensing monitoring module is electrically connected to the SRAM storage module; the vibration sensing monitoring module measures the small vibration acceleration value of the transformer; the MCU main control module realizes data interaction and control of the operation of the entire system; the SRAM storage module stores the acceleration value data; the LORA communication module realizes remote transmission of data; the battery monitoring module monitors the battery voltage; the power conversion module realizes the conversion of the system circuit level and converts the voltage into the voltage value required by different chips; the dry-type transformer vibration sensor designed in this scheme adopts an online detection method for vibration analysis of the transformer, and has no electrical connection with the entire power system (that is, a large-scale power system is not electrically connected to the primary system), and does not cause any impact on the normal operation of the power system, so that the online status of the transformer can be detected quickly, efficiently, safely and reliably.

[0024] Furthermore, the vibration sensor monitoring module includes a MOS tube Q4, a transistor Q6, a low input voltage boost converter chip U2, a linear voltage regulator chip U3, a voltage reference chip U7 and an acceleration sensor U8, the model of the low input voltage boost converter chip U2 is TLV61220DBVR, the model of the linear voltage regulator chip U3 is ME6209A28M3G, and the model of the voltage reference chip U7 is REF5050AIDR;

[0025] The drain of the MOS tube Q4 is connected to the battery, the source of the MOS tube Q4 is electrically connected to the sixth pin of the low input voltage boost conversion chip U2, the gate of the MOS tube Q4 is electrically connected to the collector of the transistor Q6, the base of the transistor Q6 is electrically connected to the MCU main control module, the fifth pin of the low input voltage boost conversion chip U2 is electrically connected to the third pin of the linear voltage regulator chip U3, the second pin of the linear voltage regulator chip U3 is electrically connected to the SRAM storage module, the sixth pin of the voltage reference chip U7 is electrically connected to the eighth pin of the acceleration sensor U8, and the sixth pin and the seventh pin of the acceleration sensor U8 are both electrically connected to the MCU main control module.

[0026] From the above description, it can be known that VCC_BAT is the power supply voltage of the battery. Whether to start the input of the low input voltage boost converter chip U2 can be controlled by the MOS tube Q4. When Wake_TLV6122=1, the transistor Q6 is turned on. At this time, the base of the MOS tube Q4 is pulled to a low level, so that the MOS tube Q4 can be turned on, and the power supply voltage of the battery can be directly input to the sixth pin of the low input voltage boost converter chip U2; when Wake_TLV6122=0, the transistor Q6 is not turned on. At this time, the base of the MOS tube Q4 is at a high level, resulting in the MOS tube Q4 not being turned on, and the power supply voltage of the battery cannot be input to the sixth pin of the low input voltage boost converter chip U2; by controlling the high and low level changes of Wake_TLV6122, the start-up of the low input voltage boost converter chip U2 can be controlled as needed, so as to control the measurement of the subsequent acceleration sensor U8, so as to realize that it is turned on only when measurement is required, so as to reduce battery loss and increase battery life;

[0027] The low input voltage boost converter chip U2 can convert the battery voltage 3.7V into the required system operating voltage 5V, and the linear voltage regulator chip U3 can convert the 5V voltage into 2.8V for use by the SRAM storage module;

[0028] The voltage reference chip U7 can further stabilize the output voltage 5V of the low input voltage boost converter chip U2, on the reference voltage 5V, to prevent the voltage input of the acceleration sensor U8 from being affected by the battery voltage drop and affecting its measurement value; the acceleration sensor U8 is used to measure the acceleration value offset problem caused by the vibration of the dry-type transformer, and can measure the X-axis acceleration value and the Y-axis acceleration value.

[0029] Furthermore, the vibration sensor monitoring module also includes an inductor L1, one end of which is electrically connected to the source of the MOS tube Q4, the third pin of the low input voltage boost converter chip U2, and the sixth pin of the low input voltage boost converter chip U2.

[0030] From the above description, it can be seen that the inductor L1 can improve the conversion efficiency of the low input voltage boost converter chip U2.

[0031] Furthermore, the vibration sensing monitoring module also includes a resistor R15 and a resistor R19, one end of the resistor R15 is electrically connected to one end of the resistor R19 and the fourth pin of the low input voltage boost conversion chip U2, respectively, the other end of the resistor R15 is electrically connected to the fifth pin of the low input voltage boost conversion chip U2 and the third pin of the linear voltage regulator chip U3, respectively, and the other end of the resistor R19 is grounded.

[0032] From the above description, it can be known that the resistor R15 and the resistor R19 form a matching resistor, which can stabilize the output voltage at 5V.

[0033] Furthermore, the vibration sensor monitoring module also includes an ADC chip U6, the model of the ADC chip U6 is LTC1861LIMS, the third pin of the ADC chip U6 is electrically connected to the seventh pin of the acceleration sensor U8, the second pin of the ADC chip U6 is electrically connected to the sixth pin of the acceleration sensor U8, and the first pin, sixth pin, seventh pin and eighth pin of the ADC chip U6 are all electrically connected to the MCU main control module.

[0034] From the above description, it can be seen that the ADC chip U6 can convert the analog values ​​of the waveforms of the front-end X-axis acceleration value and the Y-axis acceleration value into the digital values ​​required by the MCU main control module.

[0035] Furthermore, the vibration sensing monitoring module also includes an operational amplifier U4A and an operational amplifier U4B, the in-phase input terminal of the operational amplifier U4A is electrically connected to the sixth pin of the acceleration sensor U8, the output terminal of the operational amplifier U4A is electrically connected to the second pin of the ADC chip U6, the in-phase input terminal of the operational amplifier U4B is electrically connected to the seventh pin of the acceleration sensor U8, and the output terminal of the operational amplifier U4B is electrically connected to the third pin of the ADC chip U6.

[0036] From the above description, it can be known that the operational amplifier U4A and the operational amplifier U4B can filter and follow the X-axis acceleration value and Y-axis acceleration value waveforms output by the acceleration sensor U8.

[0037] Furthermore, the vibration sensing monitoring module also includes a resistor R8, a capacitor C3, a resistor R22 and a capacitor C10, one end of the resistor R8 is electrically connected to one end of the capacitor C3 and the inverting input terminal of the operational amplifier U4A, the other end of the resistor R8 is electrically connected to the other end of the capacitor C3, the output terminal of the operational amplifier U4A and the second pin of the ADC chip U6, one end of the resistor R22 is electrically connected to one end of the capacitor C10 and the inverting input terminal of the operational amplifier U4B, and the other end of the resistor R22 is electrically connected to the other end of the capacitor C10, the output terminal of the operational amplifier U4B and the third pin of the ADC chip U6.

[0038] From the above description, it can be seen that the resistor R8 and the capacitor C3, the resistor R22 and the capacitor C10 respectively constitute the X-axis and Y-axis filter combination devices, which can output the X-axis acceleration value and the Y-axis acceleration value waveform output by the acceleration sensor U8 to the ADC chip U6 more smoothly.

[0039] Furthermore, the SRAM storage module includes a chip U9, the model of the chip U9 is 23K256, the first pin, the second pin, the fifth pin and the sixth pin of the chip U9 are electrically connected to the MCU main control module, and the seventh pin and the eighth pin of the chip U9 are electrically connected to the vibration sensor monitoring module.

[0040] Furthermore, the LORA communication module includes a MOS tube Q5, a transistor Q7 and a chip U5. The model of the chip U5 is WH-L101-LP-H10. The fourteenth pin and the fifteenth pin of the chip U5 are electrically connected to the source of the MOS tube Q5. The drain of the MOS tube Q5 is connected to a 2.8V power supply. The gate of the MOS tube Q5 is electrically connected to the collector of the transistor Q7. The base of the transistor Q7 is electrically connected to the MCU main control module, and the emitter of the transistor Q7 is grounded.

[0041] From the above description, it can be known that VCC2.8V is the power supply voltage of the system. Whether to start the input of chip U5 can be controlled by MOS tube Q5. When Wake_Lora=1, transistor Q7 is turned on. At this time, the base of MOS tube Q5 is pulled to a low level, so that MOS tube Q5 can be turned on, and the power supply voltage of the battery can be directly input to the fourteenth pin and the fifteenth pin of chip U5; when Wake_Lora=0, transistor Q7 is not turned on. At this time, the base of MOS tube Q5 is a high level, so that MOS tube Q5 cannot be turned on, and the power supply voltage of the battery cannot be input to the fourteenth pin and the fifteenth pin of U5; by controlling the high and low level changes of Wake_Lora, the startup of chip U5 can be controlled as needed; chip U5 is a LORA module, which consumes a lot of power when transmitting LORA data remotely. Therefore, this method can be used to realize that it is turned on only when data upload is required to reduce battery loss and increase battery life.

[0042] Furthermore, the LORA communication module also includes an antenna J1, and the antenna J1 is electrically connected to the second pin of the chip U5.

[0043] From the above description, it can be seen that the antenna J1 is a spring antenna of the chip U5, which can increase the transmission gain.

[0044] Please refer to Figures 1 to 7 As shown, the first embodiment of the present invention is:

[0045] Please refer to Figure 1A dry-type transformer vibration sensor comprises a vibration sensing monitoring module 1, an MCU main control module 2, an SRAM storage module 3, a LORA communication module 4, a battery monitoring module 5 and a power conversion module 6, wherein the MCU main control module 2 is electrically connected to the vibration sensing monitoring module 1, the SRAM storage module 3, the LORA communication module 4, the battery monitoring module 5 and the power conversion module 6 respectively, the vibration sensing monitoring module 1 is electrically connected to the SRAM storage module 3, the vibration sensing monitoring module 1 is used to monitor the acceleration value generated by the vibration of the dry-type transformer, and the SRAM storage module 3 is used to store the acceleration value monitored by the vibration sensing monitoring module 1.

[0046] Please refer to Figure 2 The vibration sensor monitoring module 1 includes a MOS tube Q4, a transistor Q6, a low input voltage boost converter chip U2, a linear voltage regulator chip U3, a voltage reference chip U7 and an acceleration sensor U8. The model of the low input voltage boost converter chip U2 is TLV61220DBVR, the model of the linear voltage regulator chip U3 is ME6209A28M3G, and the model of the voltage reference chip U7 is REF5050AIDR;

[0047] The drain of the MOS tube Q4 is connected to the battery, the source of the MOS tube Q4 is electrically connected to the sixth pin of the low input voltage boost conversion chip U2, the gate of the MOS tube Q4 is electrically connected to the collector of the transistor Q6, the base of the transistor Q6 is electrically connected to the MCU main control module 2, the fifth pin of the low input voltage boost conversion chip U2 is electrically connected to the third pin of the linear voltage regulator chip U3, the second pin of the linear voltage regulator chip U3 is electrically connected to the SRAM storage module 3, the sixth pin of the voltage reference chip U7 is electrically connected to the eighth pin of the acceleration sensor U8, and the sixth pin and the seventh pin of the acceleration sensor U8 are both electrically connected to the MCU main control module 2.

[0048] Please refer to Figure 2 The vibration sensor monitoring module 1 also includes an inductor L1, one end of which is electrically connected to the source of the MOS tube Q4, the third pin of the low input voltage boost converter chip U2, and the sixth pin of the low input voltage boost converter chip U2.

[0049] Please refer to Figure 2 The vibration sensor monitoring module 1 also includes a resistor R15 and a resistor R19, one end of the resistor R15 is electrically connected to one end of the resistor R19 and the fourth pin of the low input voltage boost converter chip U2, the other end of the resistor R15 is electrically connected to the fifth pin of the low input voltage boost converter chip U2 and the third pin of the linear voltage regulator chip U3, and the other end of the resistor R19 is grounded.

[0050] Please refer to Figure 2 The vibration sensor monitoring module 1 also includes an ADC chip U6, the model of the ADC chip U6 is LTC1861LIMS, the third pin of the ADC chip U6 is electrically connected to the seventh pin of the acceleration sensor U8, the second pin of the ADC chip U6 is electrically connected to the sixth pin of the acceleration sensor U8, and the first pin, the sixth pin, the seventh pin and the eighth pin of the ADC chip U6 are all electrically connected to the MCU main control module 2.

[0051] Please refer to Figure 2 The vibration sensing monitoring module 1 also includes an operational amplifier U4A and an operational amplifier U4B, the non-inverting input terminal of the operational amplifier U4A is electrically connected to the sixth pin of the acceleration sensor U8, the output terminal of the operational amplifier U4A is electrically connected to the second pin of the ADC chip U6, the non-inverting input terminal of the operational amplifier U4B is electrically connected to the seventh pin of the acceleration sensor U8, and the output terminal of the operational amplifier U4B is electrically connected to the third pin of the ADC chip U6.

[0052] Please refer to Figure 2 The vibration sensing monitoring module 1 also includes a resistor R8, a capacitor C3, a resistor R22 and a capacitor C10, one end of the resistor R8 is electrically connected to one end of the capacitor C3 and the inverting input terminal of the operational amplifier U4A, the other end of the resistor R8 is electrically connected to the other end of the capacitor C3, the output end of the operational amplifier U4A and the second pin of the ADC chip U6, one end of the resistor R22 is electrically connected to one end of the capacitor C10 and the inverting input terminal of the operational amplifier U4B, and the other end of the resistor R22 is electrically connected to the other end of the capacitor C10, the output end of the operational amplifier U4B and the third pin of the ADC chip U6.

[0053] Please refer to Figure 2 The vibration sensing monitoring module 1 also includes a resistor R9, a resistor R17, a resistor R20, a capacitor C8, a capacitor C5, a capacitor C6, a capacitor C7, a capacitor C4, a capacitor C9, a capacitor C15, a capacitor C16, a capacitor C17, a capacitor C18, a capacitor C19, a capacitor C20 and a capacitor C12. For the specific connection relationship between the components, please refer to Figure 2 .

[0054] Please refer to Figure 3 The SRAM storage module 3 includes a chip U9, the model of the chip U9 is 23K256, the first pin, the second pin, the fifth pin and the sixth pin of the chip U9 are electrically connected to the MCU main control module 2, and the seventh pin and the eighth pin of the chip U9 are electrically connected to the vibration sensor monitoring module 1; the SRAM storage module 3 also includes a capacitor C21.

[0055] The MCU main control module 2 includes a chip U11A, a chip U11B, a capacitor C26, a capacitor C27, a capacitor C28, a capacitor C29, a capacitor C30, a capacitor C31, a capacitor C32, a capacitor C37, a capacitor C38, a crystal oscillator XT2, a capacitor C34, a capacitor C35, a crystal oscillator XT1, a resistor R31, a resistor R32 and a capacitor C36. For the specific connection relationship between the components, please refer to Figure 7 .

[0056] VCC_BAT is the battery supply voltage. The MOS tube Q4 can control whether to start the input of the low input voltage boost converter chip U2. The resistor R9 is a pull-up resistor. The resistor R17 and the resistor R20 form a voltage divider circuit. When Wake_TLV6122=1, the transistor Q6 is turned on. At this time, the base of the MOS tube Q4 is pulled to a low level, so that the MOS tube Q4 can be turned on, and the battery supply voltage can be directly input to the sixth pin of the low input voltage boost converter chip U2; when Wake_TLV6122= When the voltage is 0, the transistor Q6 is not turned on. At this time, the base of the MOS tube Q4 is at a high level due to the pull-up resistor R9, which causes the MOS tube Q4 to be unable to turn on, and the battery supply voltage cannot be input to the sixth pin of the low input voltage boost converter chip U2. By controlling the high and low level changes of Wake_TLV6122, the startup of the low input voltage boost converter chip U2 can be controlled as needed, so as to control the measurement of the subsequent vibration sensor, so that it is turned on only when measurement is required, so as to reduce battery loss and increase battery life.

[0057] The low input voltage boost converter chip U2 can convert the battery voltage 3.7V into the required system working voltage 5V, where the inductor L1 is a driving inductor, which can improve the conversion efficiency of the low input voltage boost converter chip U2; the capacitor C8 is a bypass capacitor, which plays a role in voltage stabilization; the resistor R15 and the resistor R19 form a matching resistor, which can stabilize the output voltage at 5V; the capacitor C5 and the capacitor C6 are filter capacitors, which stabilize the output 5V; the linear voltage regulator chip U3 can convert the 5V voltage into 2.8V, which is used by the chip U9, and the capacitor C7 is a 2.8V output filter capacitor;

[0058] The voltage reference chip U7 can further stabilize the output voltage 5V of the low input voltage boost converter chip U2, and prevent the voltage input of the acceleration sensor U8 from being affected and affecting its measurement value due to the battery voltage drop on the reference voltage 5V; capacitors C15 and C16 are the input filter capacitors of the voltage reference chip U7, and capacitors C17, C18 and C19 are the output filter capacitors of the voltage reference chip U7; the acceleration sensor U8 is used to measure the acceleration value offset problem caused by the vibration of the dry-type transformer, and can measure the X-axis acceleration value and the Y-axis acceleration value; capacitors C20 and C12 are the filter capacitors of the X-axis and Y-axis output voltages of the acceleration sensor U8, which can make the data smoother.

[0059] Operational amplifier U4A and operational amplifier U4B can filter and follow the X-axis acceleration value and Y-axis acceleration value waveform output by acceleration sensor U8; wherein capacitor C4 is the filter capacitor of operational amplifier U4A and operational amplifier U4B, making the operation of operational amplifier U4A and operational amplifier U4B more stable; resistor R8 and capacitor C3, resistor R22 and capacitor C10 respectively constitute the filter combination devices of X-axis and Y-axis, which can output the X-axis acceleration value and Y-axis acceleration value waveform output by acceleration sensor U8 more smoothly to ADC chip U6; chip U11A and chip U11B constitute chip U11;

[0060] ADC chip U6 can convert the analog values ​​of the waveforms of the front-end X-axis acceleration value and the Y-axis acceleration value into digital values ​​required by chip U11; capacitor C9 is the filter capacitor of ADC chip U6, which makes the ADC chip U6 work more stably. The first pin, the sixth pin, the seventh pin, and the eighth pin of ADC chip U6 are connected to chip U11 and communicate with chip U11 via SPI.

[0061] Chip U9 is an SRAM chip, in which capacitor C21 is the filter capacitor of ADC chip U6, which makes chip U9 work more stably. The first pin, second pin, fifth pin and sixth pin of chip U9 are connected to chip U11, and communicate with chip U11 through SPI.

[0062] Chip U11 is the main control MCU, used for the entire system program operation; capacitor C26, capacitor C27, capacitor C28, capacitor C29, capacitor C30, capacitor C31, and capacitor C32 are filter capacitors of the power supply VCC to GND, used to protect the stable operation of chip U11; capacitor C37, capacitor C38, and crystal oscillator XT2 constitute a crystal oscillator circuit of chip U11, used for the oscillation of chip U11; capacitor C34, capacitor C35, and crystal oscillator XT1 constitute another crystal oscillator circuit of chip U11, used for external time calculation of chip U11; resistor R32 and capacitor C36 constitute the reset circuit of chip U11, and resistor R31 is the BOOT1 usage of chip U11 to ground, which is a fixed usage of the chip.

[0063] Please refer to Figure 4 The LORA communication module 4 includes a MOS tube Q5, a transistor Q7 and a chip U5. The model of the chip U5 is WH-L101-LP-H10. The fourteenth pin and the fifteenth pin of the chip U5 are electrically connected to the source of the MOS tube Q5. The drain of the MOS tube Q5 is connected to a 2.8V power supply. The gate of the MOS tube Q5 is electrically connected to the collector of the transistor Q7. The base of the transistor Q7 is electrically connected to the MCU main control module 2. The emitter of the transistor Q7 is grounded.

[0064] Please refer to Figure 4 The LORA communication module 4 also includes an antenna J1, and the antenna J1 is electrically connected to the second pin of the chip U5.

[0065] The LORA communication module 4 also includes a resistor R11, a resistor R18, a resistor R21, a resistor R24, a resistor R25, a resistor R23, a resistor R26, a capacitor C11, a capacitor C13, a capacitor C14 and a connector J2. For the specific connection relationship between the components, please refer to Figure 4 .

[0066] VCC2.8V is the power supply voltage of the system. Whether to start the input of chip U5 can be controlled by MOS tube Q5. Resistor R11 is a pull-up resistor. Resistor R18 and resistor R21 form a voltage divider circuit. When Wake_Lora=1, transistor Q7 is turned on. At this time, the base of MOS tube Q5 is pulled to a low level, so that MOS tube Q5 can be turned on, and the power supply voltage of the battery can be directly input to the fourteenth and fifteenth pins of chip U5; when Wake_Lora=0, transistor Q7 is not turned on. At this time, MOS tube The base of Q5 is at a high level due to the pull-up resistor R11, which prevents the MOS tube Q5 from being turned on, and the battery supply voltage cannot be input to the fourteenth and fifteenth pins of U5; by controlling the high and low level changes of Wake_Lora, the startup of chip U5 can be controlled as needed; chip U5 is a LORA module, and when performing LORA data remote transmission and sending data, the power consumption is relatively large, so this method can be used to achieve that it is only turned on when data upload is required, so as to reduce battery loss and increase battery life.

[0067] Resistor R24 ​​and resistor R25 are connection protection resistors between chip U5 and main chip U11, resistor R26 is a pull-up resistor, and pin 23 is the wake-up pin of chip U5, which serves as a timed wake-up pin of chip U5; capacitor C13 and capacitor C14 are filter capacitors of chip U5, which make the module work more stably; resistor R23 and capacitor C11 constitute the reset circuit of chip U5, and antenna J1 is the spring antenna of chip U5, which can increase the transmission gain.

[0068] The battery monitoring module 5 includes a resistor R29, a resistor R30 and a capacitor C33. For the specific connection relationship between the components, please refer to Figure 5 .

[0069] VCC_BAT is the battery voltage, resistors R29 and R30 are voltage divider resistors, and capacitor C33 is a filter capacitor. When the battery voltage is normally 3.7V, the voltage of BAT_ADC is 3.7V*R30 / (R29+R30)=1.85V. By monitoring this voltage, the battery life and real-time status can be known and reported.

[0070] The power conversion module 6 includes a battery J3, a capacitor C25, a diode D3, a capacitor C22, a capacitor C23 and a linear voltage regulator chip U10. For the specific connection relationship between the components, please refer to Figure 6 Battery J3 is a large-capacity battery. Linear voltage regulator chip U10 can convert the battery voltage into 2.8V for use by the entire system. Capacitors C22 and C23 are 2.8V output filter capacitors. Capacitor C25 is an input filter capacitor. Diode D3 is a reverse protection diode to prevent the reverse output voltage from damaging the circuit.

[0071] In summary, a dry-type transformer vibration sensor provided by the present invention is provided, by setting a vibration sensing monitoring module, an MCU main control module, an SRAM storage module, a LORA communication module, a battery monitoring module and a power conversion module, the MCU main control module is electrically connected to the vibration sensing monitoring module, the SRAM storage module, the LORA communication module, the battery monitoring module and the power conversion module, and the vibration sensing monitoring module is electrically connected to the SRAM storage module; the vibration sensing monitoring module realizes the measurement of the small vibration acceleration value of the transformer; the MCU main control module realizes the data interaction and control of the operation of the entire system; the SRAM storage module realizes the storage of the acceleration value data volume; the LORA communication module realizes the remote transmission of data; the battery monitoring module realizes the monitoring of the battery voltage; the power conversion module realizes the conversion of the system circuit level, and converts the voltage into the voltage value required by different chips; the dry-type transformer vibration sensor designed in this scheme adopts an online detection method for vibration analysis of the transformer, and has no electrical connection with the entire power system (that is, a large-scale power system is not electrically connected to the primary system), and has no impact on the normal operation of the power system, so that the online state of the transformer can be detected quickly, efficiently, safely and reliably.

[0072] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent transformations made using the contents of the present invention's specification and drawings, or directly or indirectly applied in related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A dry-type transformer vibration sensor, characterized in that: The invention comprises a vibration sensing monitoring module, an MCU main control module, an SRAM storage module, a LORA communication module, a battery monitoring module and a power conversion module. The MCU main control module is electrically connected to the vibration sensing monitoring module, the SRAM storage module, the LORA communication module, the battery monitoring module and the power conversion module respectively. The vibration sensing monitoring module is electrically connected to the SRAM storage module. The vibration sensing monitoring module is used to monitor the acceleration value generated by the vibration of the dry-type transformer. The SRAM storage module is used to store the acceleration value monitored by the vibration sensing monitoring module.

2. The dry-type transformer vibration sensor according to claim 1, characterized in that: The vibration sensor monitoring module includes a MOS tube Q4, a transistor Q6, a low input voltage boost converter chip U2, a linear voltage regulator chip U3, a voltage reference chip U7 and an acceleration sensor U8. The model of the low input voltage boost converter chip U2 is TLV61220DBVR, the model of the linear voltage regulator chip U3 is ME6209A28M3G, and the model of the voltage reference chip U7 is REF5050AIDR. The drain of the MOS tube Q4 is connected to the battery, the source of the MOS tube Q4 is electrically connected to the sixth pin of the low input voltage boost conversion chip U2, the gate of the MOS tube Q4 is electrically connected to the collector of the transistor Q6, the base of the transistor Q6 is electrically connected to the MCU main control module, the fifth pin of the low input voltage boost conversion chip U2 is electrically connected to the third pin of the linear voltage regulator chip U3, the second pin of the linear voltage regulator chip U3 is electrically connected to the SRAM storage module, the sixth pin of the voltage reference chip U7 is electrically connected to the eighth pin of the acceleration sensor U8, and the sixth pin and the seventh pin of the acceleration sensor U8 are both electrically connected to the MCU main control module.

3. The dry-type transformer vibration sensor according to claim 2, characterized in that: The vibration sensor monitoring module further includes an inductor L1, one end of which is electrically connected to the source of the MOS tube Q4, the third pin of the low input voltage boost converter chip U2, and the sixth pin of the low input voltage boost converter chip U2.

4. The dry-type transformer vibration sensor according to claim 2, characterized in that: The vibration sensing monitoring module also includes a resistor R15 and a resistor R19, one end of the resistor R15 is electrically connected to one end of the resistor R19 and the fourth pin of the low input voltage boost conversion chip U2, respectively, the other end of the resistor R15 is electrically connected to the fifth pin of the low input voltage boost conversion chip U2 and the third pin of the linear voltage regulator chip U3, respectively, and the other end of the resistor R19 is grounded.

5. The dry-type transformer vibration sensor according to claim 2, characterized in that: The vibration sensor monitoring module also includes an ADC chip U6, the model of the ADC chip U6 is LTC1861LIMS, the third pin of the ADC chip U6 is electrically connected to the seventh pin of the acceleration sensor U8, the second pin of the ADC chip U6 is electrically connected to the sixth pin of the acceleration sensor U8, and the first pin, sixth pin, seventh pin and eighth pin of the ADC chip U6 are all electrically connected to the MCU main control module.

6. The dry-type transformer vibration sensor according to claim 5, characterized in that: The vibration sensing monitoring module also includes an operational amplifier U4A and an operational amplifier U4B, the non-inverting input terminal of the operational amplifier U4A is electrically connected to the sixth pin of the acceleration sensor U8, the output terminal of the operational amplifier U4A is electrically connected to the second pin of the ADC chip U6, the non-inverting input terminal of the operational amplifier U4B is electrically connected to the seventh pin of the acceleration sensor U8, and the output terminal of the operational amplifier U4B is electrically connected to the third pin of the ADC chip U6.

7. The dry-type transformer vibration sensor according to claim 6, characterized in that: The vibration sensing monitoring module also includes a resistor R8, a capacitor C3, a resistor R22 and a capacitor C10, one end of the resistor R8 is electrically connected to one end of the capacitor C3 and the inverting input terminal of the operational amplifier U4A, the other end of the resistor R8 is electrically connected to the other end of the capacitor C3, the output terminal of the operational amplifier U4A and the second pin of the ADC chip U6, one end of the resistor R22 is electrically connected to one end of the capacitor C10 and the inverting input terminal of the operational amplifier U4B, and the other end of the resistor R22 is electrically connected to the other end of the capacitor C10, the output terminal of the operational amplifier U4B and the third pin of the ADC chip U6.

8. The dry-type transformer vibration sensor according to claim 1, characterized in that: The SRAM storage module includes a chip U9, the model of the chip U9 is 23K256, the first pin, the second pin, the fifth pin and the sixth pin of the chip U9 are all electrically connected to the MCU main control module, and the seventh pin and the eighth pin of the chip U9 are both electrically connected to the vibration sensor monitoring module.

9. The dry-type transformer vibration sensor according to claim 1, characterized in that: The LORA communication module includes a MOS tube Q5, a transistor Q7 and a chip U5. The model of the chip U5 is WH-L101-LP-H10. The fourteenth pin and the fifteenth pin of the chip U5 are electrically connected to the source of the MOS tube Q5. The drain of the MOS tube Q5 is connected to a 2.8V power supply. The gate of the MOS tube Q5 is electrically connected to the collector of the transistor Q7. The base of the transistor Q7 is electrically connected to the MCU main control module, and the emitter of the transistor Q7 is grounded.

10. The dry-type transformer vibration sensor according to claim 9, characterized in that: The LORA communication module also includes an antenna J1, and the antenna J1 is electrically connected to the second pin of the chip U5.

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