Electrostatic chuck and semiconductor device

Abstract

The invention relates to an electrostatic chuck and semiconductor equipment. The electrostatic chuck comprises an insulating substrate and an electrostatic electrode, the electrostatic electrode comprises a central electrode and an edge electrode; the central electrode is positioned in the central area of the insulating substrate; the peripheral side of the central electrode is surrounded by the edge electrode; wherein the conductive polarity of the central electrode is opposite to that of the edge electrode; the area of the central electrode is different from that of the edge electrode. According to the invention, on the premise of ensuring the uniformity of ion implantation, the problem of non-uniform distribution of electrostatic adsorption force on the surface of the wafer caused by wafer warping can be improved, and the aggravation trend of the warping phenomenon of the wafer can be inhibited, so that the effective control of the bending degree of the wafer is realized, and the improvement of the yield of wafer products is facilitated.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to an electrostatic chuck and semiconductor equipment. Background Art

[0002] Electrostatic Chuck (ESC), also known as E-Chuck, is a device that uses three adsorption principles, namely Coulomb force, Johnson-Rabec force and gradient force, to fix the wafer. Electrostatic chuck is generally installed above the heating unit in the vacuum process chamber of the wafer etching (Etch) machine, Chemical Vapor Deposition (CVD) machine or ion implantation (IMP) machine, and is used to stably fix the wafer in the vacuum chamber of the process equipment during the processing, so that the wafer can maintain a stable position during the process and avoid movement and dislocation of the wafer.

[0003] However, after ion implantation in the actual wafer manufacturing process, the absolute value of the wafer's curvature (BOW) will increase significantly, that is, some areas of the wafer (such as the center or edge area of ​​the wafer) will warp; this will increase the distance between the wafer surface of the warped part and the electrostatic chuck, resulting in a relative decrease in the electrostatic adsorption force on the warped part, thereby exacerbating the warping of the wafer and reducing the product yield. Summary of the invention

[0004] Based on this, the embodiments of the present application provide an electrostatic chuck and a semiconductor device, which can improve the uneven distribution of electrostatic adsorption force on the wafer surface caused by wafer warping while ensuring the uniformity of ion implantation, so as to suppress the aggravating trend of wafer warping, thereby achieving effective control of the curvature of the wafer, which is beneficial to improving the yield of wafer products.

[0005] In order to achieve the above-mentioned purpose, on the one hand, some embodiments of the present application provide an electrostatic chuck. The electrostatic chuck includes an insulating substrate and an electrostatic electrode; the electrostatic electrode includes a central electrode and an edge electrode; the central electrode is located in the central area of ​​the insulating substrate; the edge electrode surrounds the peripheral side of the central electrode; wherein the conductive polarity of the central electrode is opposite to that of the edge electrode; and the area of ​​the central electrode is different from that of the edge electrode.

[0006] In some embodiments, the curvature of the target wafer is positive; the area of ​​the center electrode is smaller than the area of ​​the edge electrode.

[0007] In some examples, the electrostatic adsorption force of the center electrode on the target wafer is greater than or equal to the electrostatic adsorption force of the edge electrode on the target wafer.

[0008] In some embodiments, the curvature of the target wafer is negative; the area of ​​the center electrode is larger than the area of ​​the edge electrode.

[0009] In some examples, the electrostatic adsorption force of the center electrode on the target wafer is less than or equal to the electrostatic adsorption force of the edge electrode on the target wafer.

[0010] In some embodiments, the amount of charge carried by the center electrode is the same as the amount of charge carried by the edge electrodes.

[0011] In some embodiments, the shape of the central electrode includes a central symmetrical figure; and the shape of the edge electrode includes a ring.

[0012] In some embodiments, the electrostatic chuck further comprises a heating electrode; the heating electrode is located on a side of the electrostatic electrode away from the target wafer; the heating electrode is used to control the temperature of the target wafer; wherein the shape of the heating electrode is the same as that of the electrostatic electrode.

[0013] In some embodiments, the electrostatic chuck further comprises a power supply; the power supply comprises a first electrode and a second electrode; the power supply is used to control the amount of charge carried by the electrostatic electrodes; wherein the first electrode is electrically connected to the center electrode, and the second electrode is electrically connected to the edge electrode.

[0014] On the other hand, the present application also provides a semiconductor device according to some embodiments; the semiconductor device includes an electrostatic chuck as described in some of the aforementioned embodiments of the present application.

[0015] The embodiments of the present application may or at least have the following advantages:

[0016] In the embodiment of the present application, the electrostatic electrode is set as a central electrode located in the central area of ​​the insulating substrate and an edge electrode surrounding the central electrode. By making the area of ​​the central electrode different from the area of ​​the edge electrode, different electrostatic electrodes can have different charge densities while maintaining the same charge amount, thereby realizing the regulation of the electrostatic adsorption force of different electrostatic electrodes. In this way, the electrostatic chuck provided by the present application can match the warping of the target wafer, and by relatively increasing the charge density of the electrostatic electrode corresponding to the warping area, the electrostatic adsorption force received by the warping area can be relatively increased, so that the problem of uneven distribution of electrostatic adsorption force on the wafer surface caused by wafer warping can be improved under the premise of ensuring the uniformity of ion implantation, so as to suppress the aggravation trend of the wafer warping phenomenon, thereby realizing effective control of the curvature of the wafer, which is conducive to improving the yield of wafer products.

[0017] The details of one or more embodiments of the present application are set forth in the following drawings and description. Other features, objects, and advantages of the present application will become apparent from the description, drawings, and claims. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 A schematic top view of a conventional electrostatic electrode provided in the related art;

[0020] Figure 2 A schematic top view of another conventional electrostatic electrode provided in the related art;

[0021] Figure 3 A schematic diagram of the structure of an electrostatic chuck provided in some embodiments of the present application;

[0022] Figure 4 A schematic top view of an electrostatic electrode provided in some embodiments of the present application;

[0023] Figure 5 A schematic diagram of the structure of another electrostatic chuck provided in some embodiments of the present application;

[0024] Figure 6 A schematic top view of another electrostatic electrode provided in some embodiments of the present application;

[0025] Figure 7 A schematic diagram of the structure of another electrostatic chuck provided in some embodiments of the present application;

[0026] Figure 8 This is a schematic diagram of the structure of another electrostatic chuck provided in some embodiments of the present application.

[0027] Description of reference numerals:

[0028] a-positive electrode, b-negative electrode, 1-insulating substrate, 2-electrostatic electrode, 21-center electrode, 22-edge electrode, W-target wafer, 3-heating electrode, 4-power supply. DETAILED DESCRIPTION

[0029] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present application are given in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0030] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0031] It should be understood that when an element or layer is referred to as being "on," "adjacent to," or "connected to" other elements or layers, it may be directly on, adjacent to, connected to, or coupled to other elements or layers, or there may be intervening elements or layers. It should be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers, doping types, and / or portions, these elements, components, regions, layers, doping types, and / or portions should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer, doping type, or portion from another element, component, region, layer, doping type, or portion. Therefore, without departing from the teachings of the present application, the first element, component, region, layer, doping type, or portion discussed below may be represented as a second element, component, region, layer, or portion.

[0032] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that when the terms "consisting of" and / or "comprising" are used in this specification, the presence of the features, integers, steps, operations, elements and / or parts can be determined, but the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups is not excluded. At the same time, when used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0033] Embodiments of the invention are described herein with reference to cross-sectional views that are schematic representations of idealized embodiments (and intermediate structures) of the present application, such that variations in the shapes shown due to, for example, manufacturing techniques and / or tolerances are anticipated. Embodiments of the present application should not be limited to the specific shapes of the regions shown herein, but include deviations in shapes due to, for example, manufacturing techniques. Therefore, the regions shown in the figures are schematic in nature, their shapes do not represent the actual shapes of the regions of the device, and do not limit the scope of the present application.

[0034] Electrostatic Chuck (ESC), also known as E-Chuck, is a device that uses three adsorption principles, namely Coulomb force, Johnson-Rabec force and gradient force, to fix the wafer stably in the vacuum chamber of the process equipment during the processing, so that the wafer maintains a stable position during the process and avoids movement and dislocation of the wafer.

[0035] In the current semiconductor manufacturing process, after the wafer completes ion implantation (IMP) and other processes, the absolute value of the wafer's bow (BOW) will increase significantly; that is, some areas of the wafer (such as the center or edge area of ​​the wafer) will be warped. This will increase the distance between the warped part of the wafer surface and the electrostatic chuck, resulting in a relatively small electrostatic adsorption force on the warped part, which will aggravate the wafer warping and reduce the product yield.

[0036] However, conventional electrostatic chucks in the related art cannot improve the above problems. Figure 1 or Figure 2 , the electrostatic electrodes in conventional electrostatic chucks are usually bipolar electrodes with opposite conductive polarities (including positive electrode a and negative electrode b); wherein the positive electrode a and the negative electrode b have the same area and are axially symmetrically distributed, for example, they can be an evenly divided fan-shaped structure. In addition, since the absolute value of the power supply voltage connected to the positive electrode a and the negative electrode b is the same, the amount of charge carried by the two is equal; the charge density between the positive electrode a and the negative electrode b of the conventional electrostatic electrode is the same, so that the electrostatic adsorption force of the conventional electrostatic electrode on the wafer is equal everywhere and it is impossible to achieve local adjustment of the electrostatic adsorption force, and it is impossible to improve the wafer warping problem.

[0037] In response to the above problems, some embodiments of the present application provide an electrostatic chuck and a semiconductor device.

[0038] In some embodiments, see Figure 3 The electrostatic chuck includes an insulating substrate 1 and an electrostatic electrode 2; the electrostatic electrode 2 includes a central electrode 21 and an edge electrode 22. Figure 3 and Figure 4 It is understood that the central electrode 21 is located in the central area of ​​the insulating substrate 1; the edge electrode 22 surrounds the peripheral side of the central electrode 21; wherein the conductive polarity of the central electrode 21 and the conductive polarity of the edge electrode 22 are opposite; the area of ​​the central electrode 21 is different from the area of ​​the edge electrode 22.

[0039] Illustratively, the electrostatic chuck is located in a vacuum chamber of a semiconductor device and is used to fix a target wafer.

[0040] Exemplary types of electrostatic chucks include, but are not limited to, Coulomb type or Johnsen-Rahbek type, and the like.

[0041] By way of example, the semiconductor equipment includes but is not limited to a wafer etching machine, a chemical vapor deposition (CVD) machine or an ion implantation (IMP) machine.

[0042] In some embodiments, please refer to Figure 3 The surface of the insulating substrate 1 facing away from the electrostatic electrode 2 is used to adsorb the target wafer W.

[0043] For example, the material of the insulating substrate 1 includes but is not limited to insulating material; the material of the insulating substrate 1 may be, for example, ceramic, aluminum nitride, or aluminum oxide.

[0044] By way of example, the material of the electrostatic electrode 2 includes, but is not limited to, conductive metal.

[0045] It needs to be explained that, during the process of electrostatic adsorption of the target wafer W by the electrostatic chuck, the electrostatic electrode 2, the insulating substrate 1 between the electrostatic electrode 2 and the target wafer W, and the target wafer W are equivalent to a capacitor structure; wherein the electrostatic electrode 2 serves as the lower electrode of the capacitor structure, the insulating substrate 1 between the electrostatic electrode 2 and the target wafer W serves as the capacitor dielectric layer of the capacitor structure, and the target wafer W serves as the upper electrode of the capacitor structure.

[0046] In some examples, the distance between the surface of the insulating substrate 1 close to the target wafer W and the center electrode 21 is equal to the distance between the surface of the insulating substrate 1 close to the target wafer W and the edge electrode 22; that is, the thickness of the capacitor dielectric layer corresponding to the center electrode 21 is equal to the thickness of the capacitor dielectric layer corresponding to the edge electrode 22.

[0047] It should be noted that the “thickness” here refers to the dimension in the direction perpendicular to the insulating substrate 1 .

[0048] In some embodiments, the size of the center electrode 21 in the direction perpendicular to the insulating substrate 1 is the same as the size of the edge electrode 22 in the direction perpendicular to the insulating substrate 1 .

[0049] It should be noted that the conductive polarity of the central electrode 21 is opposite to the conductive polarity of the edge electrode 22; if the conductive polarity of the central electrode 21 is negative, the conductive polarity of the edge electrode 22 is positive; if the conductive polarity of the central electrode 21 is positive, the conductive polarity of the edge electrode 22 is negative; Figure 3 and Figure 4 Although the conductive polarity of the center electrode 21 is negative and the polarity of the edge electrode 22 is positive, the present disclosure is not limited thereto.

[0050] In some embodiments, see Figure 4 The shape of the center electrode 21 includes a central symmetrical figure; the shape of the edge electrode 22 includes a ring.

[0051] In some examples, the inner ring profile of edge electrode 22 is similar to or identical to the profile of center electrode 21 .

[0052] Illustratively, the center electrode 21 and the edge electrode 22 are concentrically arranged.

[0053] For example, the shape of the center electrode 21 includes but is not limited to a circle, an ellipse, a regular polygon, or the like.

[0054] For example, the shape of the edge electrode 22 includes but is not limited to a circular ring, an elliptical ring, a regular polygonal ring, and the like.

[0055] In some examples, the size of the electrostatic electrode 2 matches the size of the target wafer W.

[0056] In the embodiment of the present application, the electrostatic electrode 2 is set to be a central electrode 21 located in the central area of ​​the insulating substrate 1 and an edge electrode 22 surrounding the central electrode 21. By making the area of ​​the central electrode 21 different from the area of ​​the edge electrode 22, different electrostatic electrodes 2 can have different charge densities while maintaining the same charge amount, thereby realizing the regulation of the electrostatic adsorption force of different electrostatic electrodes 2. In this way, the electrostatic chuck provided by the present application can match the warping of the target wafer W, and by relatively increasing the charge density of the electrostatic electrode 2 corresponding to the warping area, the electrostatic adsorption force received by the warping area is relatively increased, thereby compensating for the uneven distribution of the electrostatic adsorption force received by the wafer surface caused by the wafer warping, suppressing the aggravation trend of the wafer warping phenomenon, realizing effective control of the curvature of the wafer, and improving the wafer product yield.

[0057] In some embodiments, the amount of charge carried by the center electrode 21 is the same as the amount of charge carried by the edge electrode 22 .

[0058] In the process of the electrostatic chuck adsorbing the target wafer W, a voltage is applied to the electrostatic electrode 2 through the power supply 4, so that polarized charges are generated in the capacitor dielectric layer (i.e., the insulating substrate 1 between the electrostatic electrode 2 and the target wafer W), so that an electric field is formed in the capacitor dielectric layer, and the electric field propagates in the insulating substrate 1 and between the contact interface between the insulating substrate 1 and the target wafer W and extends to the surface of the target wafer W; the electric field causes the charge on the surface of the target wafer W to be redistributed or polarized, and the generated free charges move under the action of the electric field, wherein the positive charges and negative charges move to different electrostatic electrodes 2 respectively; finally, under the action of the electrostatic adsorption force, the target wafer W is adsorbed on the surface of the insulating substrate 1 on the side away from the electrostatic electrode 2.

[0059] During the process of releasing the target wafer W by the electrostatic chuck, since the charge carried by the center electrode 21 of the electrostatic electrode 2 is the same as the charge carried by the edge electrode 22, the center electrode 21 and the edge electrode 22 can be alternately converted in conductive polarity by alternately converting the output polarity of the power supply 4, so that the charges of different polarities inside the insulating substrate 1 cancel each other out to eliminate the polarized charge, and eliminate the polarized charge inside the target wafer W, thereby eliminating the electrostatic adsorption force of the electrostatic chuck to release the target wafer W.

[0060] From the above, the electrostatic chuck provided in the embodiment of the present application relatively reduces the area of ​​the electrostatic electrode 2 corresponding to the warping area of ​​the target wafer W by making the area of ​​the center electrode 21 different from the area of ​​the edge electrode 22, and keeps the charge carried by the center electrode 21 the same as the charge carried by the edge electrode 22, so as to relatively increase the charge density on the electrostatic electrode 2 corresponding to the warping area of ​​the target wafer W, thereby relatively increasing the electrostatic adsorption force on the warping area, and suppressing the aggravation trend of the wafer warping phenomenon. In addition, since the charge carried by the center electrode 21 is the same as the charge carried by the edge electrode 22, that is, the positive and negative charges between the center electrode 21 and the edge electrode 22 are balanced; in this way, in the process of performing the ion implantation process on the target wafer W, the ion distribution uniformity and implantation dose in the ion implantation process will not be affected, which is conducive to improving the yield of the ion implantation process.

[0061] It should be noted that the bow of a wafer (BOW) refers to the deviation between the minimum and maximum values ​​of the center surface of the wafer from the reference plane (the reference plane includes the least square reference plane of the center surface of the wafer). Figure 3 , if the curvature of the wafer is positive, the shape of the wafer is convex; see Figure 5 ,If the curvature of the wafer is negative, the shape of the wafer is concave.

[0062] In some embodiments, please combine Figure 3 and Figure 4 It is understood that the curvature of the target wafer W is a positive value; the area of ​​the center electrode 21 is smaller than the area of ​​the edge electrode 22 .

[0063] In some examples, the electrostatic adsorption force of the center electrode 21 on the target wafer W is greater than or equal to the electrostatic adsorption force of the edge electrode 22 on the target wafer W.

[0064] It should be explained that if the curvature of the target wafer W is positive, the target wafer W will appear as follows: Figure 3 The convex shape shown; wherein the distance between the central area of ​​the target wafer W and the insulating substrate 1 is greater than the distance between the edge area of ​​the target wafer W and the insulating substrate 1.

[0065] In the embodiment of the present application, by making the area of ​​the center electrode 21 smaller than the area of ​​the edge electrode 22, the charge density on the center electrode 21 is made greater than the charge density on the edge electrode 22 while keeping the charge amount of the center electrode 21 consistent with the charge amount of the edge electrode 22; in this way, since the electrostatic adsorption force is negatively correlated with the distance and positively correlated with the charge density when other conditions are the same, the wafer suction cup provided in the embodiment of the present application can compensate for the difference in electrostatic adsorption force that may be caused by the different distances between the center area and the edge area of ​​the target wafer W and the insulating substrate 1, and effectively balances the magnitude of the electrostatic adsorption force exerted on various parts of the surface of the target wafer W, thereby improving the problem of uneven distribution of electrostatic adsorption force on the wafer surface caused by wafer warping while ensuring the uniformity of ion implantation, so as to suppress the aggravation trend of the wafer warping phenomenon, thereby achieving effective control of the curvature of the wafer, which is beneficial to improving the yield of wafer products.

[0066] It should be added that, by adjusting the area ratio of the center electrode 21 and the edge electrode 22, the embodiment of the present application can make the electrostatic adsorption force of the center electrode 21 on the target wafer W greater than the electrostatic adsorption force of the edge electrode 22 on the target wafer W; in this way, the electrostatic suction cup provided in the embodiment of the present application can also effectively improve the warping problem of the target wafer W, which is beneficial to improving the uniformity of the target wafer W, thereby helping to improve the process yield.

[0067] In other embodiments, please combine Figure 5 and Figure 6 It is understood that the curvature of the target wafer W is a negative value; the area of ​​the center electrode 21 is greater than the area of ​​the edge electrode 22 .

[0068] In some examples, the electrostatic adsorption force of the center electrode 21 on the target wafer W is less than or equal to the electrostatic adsorption force of the edge electrode 22 on the target wafer W.

[0069] It should be explained that if the curvature of the target wafer W is a negative value, the target wafer W will appear as follows: Figure 5 The concave shape shown; wherein the distance between the central area of ​​the target wafer W and the insulating substrate 1 is smaller than the distance between the edge area of ​​the target wafer W and the insulating substrate 1.

[0070] In the embodiment of the present application, by making the area of ​​the center electrode 21 larger than the area of ​​the edge electrode 22, the charge density on the center electrode 21 is made smaller than the charge density on the edge electrode 22 while keeping the charge amount of the center electrode 21 consistent with the charge amount of the edge electrode 22; in this way, since the electrostatic adsorption force is negatively correlated with the distance and positively correlated with the charge density when other conditions are the same, the wafer suction cup provided in the embodiment of the present application can compensate for the difference in electrostatic adsorption force that may be caused by the different distances between the center area and the edge area of ​​the target wafer W and the insulating substrate 1, and effectively balances the magnitude of the electrostatic adsorption force exerted on various parts of the surface of the target wafer W, thereby improving the problem of uneven distribution of electrostatic adsorption force on the wafer surface caused by wafer warping while ensuring the uniformity of ion implantation, so as to suppress the aggravation trend of the wafer warping phenomenon, thereby achieving effective control of the curvature of the wafer, which is beneficial to improving the yield of wafer products.

[0071] It should be added that, by adjusting the area ratio of the center electrode 21 and the edge electrode 22, the embodiment of the present application can make the electrostatic adsorption force of the center electrode 21 on the target wafer W smaller than the electrostatic adsorption force of the edge electrode 22 on the target wafer W; in this way, the electrostatic suction cup provided in the embodiment of the present application can also effectively improve the warping problem of the target wafer W, which is beneficial to improving the uniformity of the target wafer W, thereby helping to improve the process yield.

[0072] In some embodiments, see Figure 7 The electrostatic chuck also includes a heating electrode 3; the heating electrode 3 is located on the side of the electrostatic electrode 2 away from the target wafer W; the heating electrode 3 is used to control the temperature of the target wafer W; wherein the shape of the heating electrode 3 is the same as that of the electrostatic electrode 2.

[0073] For example, the shape of the heating electrode 3 includes a centrally symmetrical figure and a ring that are concentrically arranged from the inside to the outside; wherein the centrally symmetrical figure includes but is not limited to a circle, an ellipse or a regular polygon, etc.; the ring includes but is not limited to a circular ring, an elliptical ring or a regular polygon ring, etc.

[0074] It should be noted that in the embodiment of the present application, by making the shape of the electrostatic electrode 2 match the shape of the heating electrode 3, the thermal stress distribution is matched with the electrostatic adsorption force distribution, which can effectively reduce the influence of the polarity of the electrostatic electrode 2 on the temperature field provided by the heating electrode 3, and improve the stability and uniformity of the temperature field provided by the heating electrode 3, so as to improve the uniformity of the temperature difference distribution on the target wafer W; in this way, in the process of performing the ion implantation process on the target wafer W, the ion distribution uniformity and the implantation dose in the ion implantation process will not be affected, which is beneficial to improving the yield of the ion implantation process.

[0075] In some embodiments, see Figure 8The electrostatic chuck also includes a power supply 4; the power supply 4 includes a first electrode and a second electrode; the power supply 4 is used to control the amount of charge carried by the electrostatic electrode 2; wherein the first electrode is electrically connected to the center electrode 21, and the second electrode is electrically connected to the edge electrode 22.

[0076] For example, the conductive polarity of the central electrode 21 and the edge electrode 22 is the same as the polarity of the power source 4 to which they are connected.

[0077] It should be noted that if the first electrode is a negative electrode (-), the second electrode is a positive electrode (+); if the second electrode is a negative electrode (+), the first electrode is a positive electrode (+); Figure 8 Although the second electrode is a positive electrode and the first electrode is a negative electrode as an example, the present disclosure is not limited to this.

[0078] In the embodiment of the present application, a voltage is applied to the electrostatic electrode 2 by the power supply 4, and the voltage provided by the power supply 4 is controlled to control the amount of charge carried by the electrostatic electrode 2, so that the amount of charge carried by the electrostatic electrode 2 can be positively correlated with the absolute value of the curvature of the target wafer W, thereby making the magnitude of the electrostatic adsorption force positively correlated with the absolute value of the curvature of the target wafer W; in this way, the electrostatic suction cup provided in the embodiment of the present application can adjust the magnitude of the electrostatic adsorption force according to the actual curvature of the target wafer W, thereby improving the controllability of the improvement effect on the wafer warping problem, effectively improving the problem of uneven distribution of the electrostatic adsorption force on the wafer surface caused by the wafer warping, so as to suppress the aggravation trend of the wafer warping phenomenon, thereby achieving effective control of the curvature of the wafer, which is beneficial to improving the yield of the wafer product.

[0079] The present application also provides a semiconductor device according to some embodiments, the semiconductor device includes the electrostatic chuck in some of the above embodiments. The semiconductor device also has the technical advantages of the above electrostatic chuck. It should be noted that the parts that are the same or corresponding to the above embodiments can refer to the corresponding description of the above embodiments, and will not be described in detail below.

[0080] By way of example, the semiconductor equipment includes but is not limited to a wafer etching machine, a chemical vapor deposition (CVD) machine or an ion implantation (IMP) machine.

[0081] It is worth mentioning that the electrostatic chuck provided in the embodiment of the present application can be applied to an ion implantation (IMP) machine to effectively improve the uniformity of the injected ions in the ion implantation process. It should be noted that the embodiment of the present application avoids the problem of uneven injection of ions due to the uneven distribution of the charge of the electrostatic electrode 2 by maintaining the same amount of charge on different electrostatic electrodes 2; and by matching the shape of the electrostatic electrode 2 with the shape of the heating electrode 3, the thermal stress distribution matches the electrostatic adsorption force distribution, which is beneficial to reduce the adverse effects of the electrostatic field in the wafer chuck on the temperature field on the target wafer W, thereby improving the uniformity of the temperature difference distribution on the target wafer W, which is beneficial to improving the uniformity of the injected ions.

[0082] In some embodiments, the semiconductor device further includes a process chamber; and the electrostatic chuck is located in the process chamber of the semiconductor device.

[0083] For example, an electrostatic chuck is used to fix a target wafer for a semiconductor device to perform a process.

[0084] In the description of this specification, the description with reference to the terms "some embodiments", "some examples", "exemplarily", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic descriptions of the above terms do not necessarily refer to the same embodiment or example.

[0085] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0086] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the invention patent. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application.

Claims

1. An electrostatic chuck, characterized in that: Used to adsorb the target wafer; the electrostatic chuck includes: Insulating substrate; The electrostatic electrode comprises a central electrode and an edge electrode; the central electrode is located in the central area of ​​the insulating substrate; and the edge electrode surrounds the peripheral side of the central electrode; The conductive polarity of the central electrode is opposite to that of the edge electrode; and the area of ​​the central electrode is different from that of the edge electrode.

2. The electrostatic chuck according to claim 1, characterized in that The curvature of the target wafer is a positive value; the area of ​​the central electrode is smaller than the area of ​​the edge electrode.

3. The electrostatic chuck according to claim 2, characterized in that The electrostatic adsorption force of the central electrode on the target wafer is greater than or equal to the electrostatic adsorption force of the edge electrode on the target wafer.

4. The electrostatic chuck according to claim 1, characterized in that The curvature of the target wafer is a negative value; the area of ​​the central electrode is greater than the area of ​​the edge electrode.

5. The electrostatic chuck according to claim 4, characterized in that The electrostatic adsorption force of the central electrode on the target wafer is less than or equal to the electrostatic adsorption force of the edge electrode on the target wafer.

6. The electrostatic chuck according to any one of claims 1 to 5, characterized in that: The amount of charge carried by the central electrode is the same as the amount of charge carried by the edge electrode.

7. The electrostatic chuck according to claim 1, wherein: The shape of the central electrode includes a central symmetrical figure; the shape of the edge electrode includes a ring.

8. The electrostatic chuck according to claim 1, wherein: Also includes: A heating electrode, located on a side of the electrostatic electrode away from the target wafer, for controlling the temperature of the target wafer; Wherein, the shape of the heating electrode is the same as that of the electrostatic electrode.

9. The electrostatic chuck according to claim 1, wherein: Also includes: A power source, including a first electrode and a second electrode, for controlling the amount of charge carried by the electrostatic electrode; The first electrode is electrically connected to the central electrode, and the second electrode is electrically connected to the edge electrode.

10. A semiconductor device, characterized in that: Comprising an electrostatic chuck as described in any one of claims 1 to 9.

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