Heat dissipation structure of semiconductor power module

Abstract

The invention belongs to the technical field of semiconductor power modules, and relates to a semiconductor power module heat dissipation structure which comprises a heat dissipation substrate, the heat dissipation substrate is provided with a fluid containing cavity, a fluid channel is formed in the fluid containing cavity, and the heat dissipation substrate is further provided with a heat dissipation layer which is arranged on the heat dissipation substrate in the flowing direction of fluid in the fluid containing cavity. The substrate liquid inlet and the substrate liquid outlet are formed in the heat dissipation substrate and located in the two ends of the heat dissipation substrate, and the substrate liquid inlet and the substrate liquid outlet are communicated with the two ends of the fluid channel respectively. The chip in the center of the semiconductor power module can obtain a good cooling effect, the temperature of the whole chip is more uniform, and meanwhile the problem that the temperature of the chip is high when a traditional heat dissipation structure is close to an outlet is solved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor power modules and relates to a heat dissipation structure of a semiconductor power module. Background Art

[0002] Semiconductor power modules often use multi-chip parallel packaging to increase the current level of the module. Due to the effect of thermal coupling, this arrangement often causes the temperature of the chip in the middle of the module to be higher than the temperature of the chips around the module, affecting the overall performance and reliability of the power module. The parallel multi-chip method often uses a symmetrical layout to optimize the module inductance, but due to volume limitations, it is not possible to reduce the thermal coupling between chips by optimizing the layout.

[0003] After the heat dissipation structure absorbs the heat from the chip components and other heat dissipation objects, it transfers the heat to the coolant for heat dissipation. However, in the process of heat dissipation by water cooling and other heat dissipation mechanisms, after the coolant absorbs the heat, its temperature gradually rises, and the cooling effect decreases, resulting in a maximum temperature difference of more than 10°C in the junction temperature of the chip components upstream and downstream of the heat dissipation mechanism, which seriously affects the output capacity of the power module. Summary of the invention

[0004] In view of this, the purpose of the present invention is to provide a semiconductor power module heat dissipation structure to solve the problem that the local temperature of individual chips of semiconductor power devices in the prior art is too high due to thermal coupling, so as to improve the overall performance and reliability of the semiconductor power module.

[0005] In order to achieve the above object, the present invention provides the following technical solutions:

[0006] A semiconductor power module heat dissipation structure includes a heat dissipation substrate, the heat dissipation substrate has a fluid containing cavity, a fluid channel is formed in the fluid containing cavity, and a substrate liquid inlet and a substrate liquid outlet are also provided on the heat dissipation substrate along the fluid flow direction in the fluid containing cavity and located at both ends of the heat dissipation substrate, and the substrate liquid inlet and the substrate liquid outlet are respectively connected to the two ends of the fluid channel.

[0007] Furthermore, the fluid channel is in the shape of a square spiral and is divided into an inflow channel and an outflow channel. The inflow channel flows from the substrate liquid inlet to the center of the heat dissipation substrate, and the outflow channel flows from the heat dissipation substrate to the substrate liquid outlet.

[0008] Furthermore, a connection surface for carrying a semiconductor power module is provided on one side of the heat dissipation substrate.

[0009] Furthermore, a heat dissipation wall arranged in the fluid chamber is provided on a side of the heat dissipation substrate away from the connection surface, and a square spiral fluid channel is separated by the heat dissipation wall.

[0010] Furthermore, the fluid includes at least one of water, ethylene glycol, and oil.

[0011] The beneficial effects of the present invention are:

[0012] The present invention provides a semiconductor power module heat dissipation structure, which arranges the fluid channel in a square spiral shape so that the fluid flows from the substrate inlet through the inflow fluid channel to the center of the heat dissipation substrate, and then from the center of the heat dissipation substrate through the outflow fluid channel to the substrate outlet, so that the temperature of the coolant is within an acceptable range when flowing through the center of the substrate, so that the chip located at the center of the semiconductor power module can obtain a good cooling effect, and the inflow channel is arranged adjacent to the outflow channel. When flowing out, the coolant in the outflow channel can also be further cooled, so that the chip located at the end of the fluid can obtain a good cooling effect, thereby making the overall chip temperature uniform, and at the same time solving the problem of high chip temperature near the outlet of the traditional heat dissipation structure.

[0013] Other advantages, objectives and features of the present invention will be described in the following description to some extent, and to some extent, will be obvious to those skilled in the art based on the following examination and study, or can be taught from the practice of the present invention. The objectives and other advantages of the present invention can be realized and obtained through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] In order to make the purpose, technical solutions and advantages of the present invention more clear, the present invention will be described in detail below in conjunction with the accompanying drawings, wherein:

[0015] Figure 1 A schematic top view of a semiconductor power module heat dissipation structure provided by an embodiment of the present invention;

[0016] Figure 2 A schematic diagram of a connection surface in a heat dissipation structure of a semiconductor power module provided by an embodiment of the present invention;

[0017] Figure 3 A schematic oblique structural view of a semiconductor power module heat dissipation structure provided by an embodiment of the present invention;

[0018] Figure 4 A schematic diagram of an inflow channel in a heat dissipation structure of a semiconductor power module provided by an embodiment of the present invention;

[0019] Figure 5 A schematic diagram of an outflow channel in a heat dissipation structure of a semiconductor power module provided by an embodiment of the present invention;

[0020] Figure 6A schematic diagram of an implementation of a semiconductor power module heat dissipation structure provided by an embodiment of the present invention;

[0021] Figure 7 It is the fluid simulation thermal diagram of the traditional fin heat dissipation structure and the power module temperature schematic diagram;

[0022] Figure 8 A fluid simulation thermodynamic diagram and a power module temperature schematic diagram of a semiconductor power module heat dissipation structure provided by an embodiment of the present invention.

[0023] Figure numerals: 1-heat dissipation substrate; 2-substrate liquid inlet; 3-heat dissipation wall; 4-fluid channel; 5-substrate liquid outlet; 6-fluid cavity; 7-connection surface. DETAILED DESCRIPTION

[0024] The following describes the embodiments of the present invention by specific examples, and those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be noted that the illustrations provided in the following embodiments only illustrate the basic concept of the present invention in a schematic manner, and the following embodiments and features in the embodiments can be combined with each other without conflict.

[0025] Among them, the drawings are only used for illustrative explanations, and they only represent schematic diagrams rather than actual pictures, and should not be understood as limitations on the present invention. In order to better illustrate the embodiments of the present invention, some parts of the drawings may be omitted, enlarged or reduced, and do not represent the size of actual products. For those skilled in the art, it is understandable that some well-known structures and their descriptions in the drawings may be omitted.

[0026] The same or similar numbers in the drawings of the embodiments of the present invention correspond to the same or similar parts; in the description of the present invention, it should be understood that if the terms "upper", "lower", "left", "right", "front", "rear", etc. indicate the orientation or position relationship, they are based on the orientation or position relationship shown in the drawings, which is only for the convenience of describing the present invention and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operate in a specific orientation. Therefore, the terms describing the position relationship in the drawings are only used for illustrative purposes and cannot be understood as limiting the present invention. For ordinary technicians in this field, the specific meanings of the above terms can be understood according to specific circumstances.

[0027] See also Figure 1 to Figure 6, is a semiconductor power module heat dissipation structure, including a heat dissipation substrate 1, a fluid channel 4, a substrate liquid inlet 2, a substrate liquid outlet 5 and a heat dissipation wall 3, wherein the heat dissipation substrate 1 has a fluid containing cavity 6, and a fluid channel 4 is formed in the fluid containing cavity 6. The heat dissipation substrate 1 is also provided with a substrate liquid inlet 2 and a substrate liquid outlet 5 located at both ends of the heat dissipation substrate 1 along the fluid flow direction. The substrate liquid inlet 2 and the substrate liquid outlet 5 are respectively connected to the two ends of the fluid channel 4. The connecting surface 7 is located on one side of the heat dissipation substrate 1 for carrying the semiconductor power module; the heat dissipation wall 3 is located on the side of the heat dissipation substrate 1 away from the connecting surface 7.

[0028] Specifically, the shape of the fluid channel 4 is a square spiral, and can be divided into an inflow channel and an outflow channel. The inflow channel flows from the substrate liquid inlet 2 into the center of the heat dissipation substrate, and the outflow channel flows out from the heat dissipation substrate to the substrate liquid outlet 5. The fluid cavity 6 contains fluid, and the fluid includes at least one of water, ethylene glycol, and oil. The heat dissipation wall 3 is located on the side of the heat dissipation substrate away from the connecting surface 7, and is located in the fluid cavity 6. It has a solid structure and separates a square spiral fluid channel 4 in the fluid cavity 6.

[0029] In this embodiment, the fluid channel 4 is arranged in a square spiral shape, so that the fluid flows from the substrate inlet through the inflow fluid channel to the center of the heat dissipation substrate, and then from the center of the heat dissipation substrate through the outflow fluid channel to the substrate outlet. When the coolant flows through the center of the substrate, the temperature is within an acceptable range, so that the chip located at the center of the semiconductor power module can obtain a good cooling effect, and the inflow channel and the outflow channel are arranged adjacent to each other. When flowing out, the coolant in the outflow channel can also be further cooled, so that the chip located at the end of the fluid can obtain a good cooling effect, thereby making the overall chip temperature uniform, and at the same time solving the problem of high chip temperature near the outlet of the traditional heat dissipation structure.

[0030] See also Figure 7-8 , which are thermal diagrams and temperature schematic diagrams obtained by simulating the traditional fin heat dissipation structure and the semiconductor power module heat dissipation structure in this embodiment under the same simulation conditions. It can be seen that the temperatures at each power chip in this embodiment are relatively uniform, with the highest temperature difference of 7°C, while the temperature difference of the power chip in the traditional fin heat dissipation structure reaches 23°C, which shows that this embodiment has good technical effects.

[0031] Finally, it should be noted that the above embodiments are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution, which should be included in the scope of the claims of the present invention.

Claims

1. A semiconductor power module heat dissipation structure, characterized in that: The invention comprises a heat dissipation substrate, wherein the heat dissipation substrate has a fluid containing cavity, a fluid channel is formed in the fluid containing cavity, and a substrate liquid inlet and a substrate liquid outlet are provided on the heat dissipation substrate along the fluid flow direction in the fluid containing cavity and located at both ends of the heat dissipation substrate, and the substrate liquid inlet and the substrate liquid outlet are respectively connected to the two ends of the fluid channel.

2. The semiconductor power module heat dissipation structure according to claim 1, characterized in that: The fluid channel is in the shape of a square spiral and is divided into an inflow channel and an outflow channel. The inflow channel flows from the substrate liquid inlet to the center of the heat dissipation substrate, and the outflow channel flows from the center of the heat dissipation substrate to the substrate liquid outlet.

3. The semiconductor power module heat dissipation structure according to claim 2, characterized in that: A connection surface for carrying a semiconductor power module is provided on one side of the heat dissipation substrate.

4. The semiconductor power module heat dissipation structure according to claim 3, characterized in that: A heat dissipation wall arranged in the fluid chamber is provided on the side of the heat dissipation substrate facing away from the connection surface, and a square spiral fluid channel is separated by the heat dissipation wall.

5. The semiconductor power module heat dissipation structure according to claim 1, characterized in that: The fluid includes at least one of water, ethylene glycol, and oil.

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