Preparation method of LED full-color display array structure

Abstract

The invention discloses a preparation method of an LED full-color display array structure, and the method comprises the steps: constructing a blue light sub-pixel array through growing a blue light LED epitaxial layer on a sapphire substrate; growing a green light LED epitaxial layer on the sapphire substrate, and constructing a green light sub-pixel array; growing a red light LED array on the GaAs substrate, and arranging a plurality of composite buffer layers between the red light LED array and the GaAs substrate; transferring the red light LED array to a sapphire substrate, and cutting the red light LED array into independent sub-pixel arrays; gluing the edge of the three-color sub-pixel array, sequentially stacking the three-color sub-pixel array, and pressurizing and curing the three-color sub-pixel array; the three-color LED is driven to emit light through an electrode input signal, full-color display is mixed from the back face, and preparation of the full-color display array structure is achieved. According to the method, heat can be effectively conducted, heat generated by the LED chip is rapidly dissipated, the temperature of the chip is reduced, and the stability and the service life of a device are improved.

Description

Technical Field

[0001] The invention relates to the technical field of optoelectronic devices, and in particular to a method for preparing an LED full-color display array structure. Background Art

[0002] With the continuous progress of LED chip manufacturing, integrated packaging, display control and process technology, high-definition LED display products will lead the development trend of LED display. LED small-pitch display (Mini-LED) and micro-pitch display (Micro-LED) will be widely used in LED-TV, wearable electronics, VR, AR and other fields with its advantages of high brightness, seamless overall, long life, wide color gamut, short response time and large viewing angle. In the future, it is expected to become a strong competitor of LCD and OLED and usher in explosive growth.

[0003] The commonly used technology at present is to solidify the red, green and blue chips in order by column on the PCB board and arrange them into an array. Three chips of different colors form a pixel point. The P electrodes of the chips are connected by gold wire to form row control line electrodes, and the N electrodes of the chips are connected to form column data line electrodes. They are all connected to the circuit on the PCB board and adopt a row-by-row scanning drive method.

[0004] Chinese invention patent CN108962930A discloses a LED full-color display array structure and preparation method. The invention grows blue and green LED epitaxial layers on a sapphire substrate to form an independent sub-pixel array, and uses GaAs as the growth substrate for the red LED epitaxial layer. The red array is then separated from the GaAs substrate and transferred to a sapphire transparent substrate for final packaging. The invention still faces many challenges in practical applications: First, the differences in thermal expansion coefficients and thermal conductivity between different materials in the invention lead to problems such as thermal stress mismatch and inconsistent thermal conduction efficiency under high-temperature working environments, which in turn affects the life and performance stability of the LED. Second, the invention lacks precise control and rigorous data support during preparation, making the manufacturing process appear to be inaccurate and scientific, and unable to accurately control various parameters during the LED preparation method, making it difficult to ensure product quality. The produced LED devices may show large fluctuations in performance, resulting in increased production costs and reduced product market competitiveness. Summary of the invention

[0005] The purpose of the present invention is to solve the problems of thermal stress mismatch, inconsistent heat conduction efficiency and lack of precise and rigorous data support between different materials in a high-temperature working environment in the prior art, and to propose a method for preparing an LED full-color display array structure.

[0006] In order to achieve the above object, the present invention adopts the following technical solution: a method for preparing an LED full-color display array structure, comprising the following steps:

[0007] Step S1, growing a blue light LED epitaxial layer on a sapphire substrate to construct a blue light sub-pixel array;

[0008] Step S2, growing a green light LED epitaxial layer on a sapphire substrate to construct a green light sub-pixel array;

[0009] Step S3, growing a red LED array on a GaAs substrate, and providing a multi-layer composite buffer layer between the red LED array and the GaAs substrate;

[0010] Step S4, transferring the red LED array to a sapphire substrate and cutting it into independent sub-pixel arrays;

[0011] Step S5, applying glue to the edge of the three-color sub-pixel array, stacking them in order and pressurizing and curing them;

[0012] Step S6, inputting signals through the electrodes to drive the three-color LEDs to emit light, and mixing the three-color LEDs to produce a full-color display from the back.

[0013] Furthermore, in step S1, the following sub-steps are also included:

[0014] S1-1, preparing an LED blue light sub-pixel array substrate on a sapphire transparent substrate;

[0015] S1-2, growing a blue LED epitaxial layer on a sapphire transparent substrate;

[0016] S1-3, calculate the epitaxial layer growth rate R by the following formula v :

[0017]

[0018] Where k is a constant, F is a frequency factor, and E a is the activation energy, R is the gas constant, and T is the absolute temperature;

[0019] S1-4, using an LED flip chip process to prepare a plurality of N×M arrays on the blue LED epitaxial layer, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array;

[0020] S1-5, calculate the resolution Res of the LED sub-pixel array using the following formula:

[0021] Res=N x *N y

[0022] Among them, Nx is the number of pixels in the horizontal direction, N y is the number of pixels in the vertical direction;

[0023] S1-6, calculate the pixel density PPI of the LED sub-pixel array by the following formula:

[0024]

[0025] Where in is the screen diagonal in inches;

[0026] S1-7, using precision cutting technology, the substrate is cut along the array into a number of independent LED blue light sub-pixel arrays.

[0027] Furthermore, in step S2, the following sub-steps are also included:

[0028] S2-1, preparing an LED green light sub-pixel array substrate on a sapphire transparent substrate;

[0029] S2-2, growing a green LED epitaxial layer on a sapphire transparent substrate;

[0030] S2-3, using an LED flip chip process to prepare a plurality of N×M arrays on the green LED epitaxial layer, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array;

[0031] S2-4, using precision cutting technology, the substrate is cut along the array into a number of independent LED green light sub-pixel arrays.

[0032] Furthermore, in step S3, the following sub-steps are also included:

[0033] S3-1, preparing an LED red photon pixel array substrate;

[0034] S3-2, growing a red LED epitaxial layer on a GaAs substrate;

[0035] S3-3, using LED flip chip process to prepare a plurality of LED red light arrays N×M arrays with electrodes on the same surface on a GaAs substrate, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array;

[0036] S3-4, a multi-layer composite buffer layer is set between the red light LED array and the GaAs substrate, firstly a layer of aluminum nitride with high thermal conductivity is deposited as a heat conducting layer, and then a layer of aluminum oxide or silicon dioxide is deposited as an isolation layer.

[0037] Furthermore, in step S4, the following sub-steps are also included:

[0038] S4-1, the red light array is separated from the GaAs substrate by laser lift-off technology, and the red light array is transferred to a sapphire transparent substrate by direct bonding technology;

[0039] S4-2, setting the same buffer layer between the red light array and the sapphire substrate;

[0040] S4-3, cutting the transferred red LED array to form an independent red sub-pixel array.

[0041] Furthermore, in step S5, the following sub-steps are also included:

[0042] S5-1, evenly apply epoxy resin glue inside the edge electrode of the three-color sub-pixel array substrate to ensure that there are no bubbles and the coating is even;

[0043] S5-2, calculate the transmittance T of epoxy resin glue by the following formula:

[0044]

[0045] Where R is the reflectivity, α is the absorption coefficient of the epoxy resin glue, and d is the thickness of the epoxy resin glue;

[0046] S5-3, stacking the blue, green and red sub-pixel array substrates accurately in order, and applying appropriate pressure to ensure close bonding;

[0047] S5-4, placing the stacked substrates in an oven, and completely curing the encapsulation adhesive by controlling the temperature and time to form a stable full-color display array.

[0048] Furthermore, in step S5, the following sub-steps are also included:

[0049] S5-1, inputting driving and control signals to the electrodes at the edge of the substrate;

[0050] S6-2, calculate the relationship between the current and voltage of the input LED by the following formula:

[0051]

[0052] Where I is the current, I s is the reverse saturation current, q is the electron charge, V is the voltage, n is the ideality factor, k is the Boltzmann constant, and T is the absolute temperature;

[0053] S6-3, driving the LED sub-pixel arrays of red, green and blue colors to emit light simultaneously;

[0054] S6-4, calculate the mixed color C by the following formula 混 RGB values:

[0055]

[0056] Among them, a, b, c are the ratios of red, green, and blue respectively, a+b+c=1, the RGB value of red is (R, 0, 0), the RGB value of green is (0, G, 0), and the RGB value of red is (0, 0, B);

[0057] S6-5, the back of the blue substrate serves as the front of the full-color display screen. Light converges from the back of the blue LED blue photon sub-pixel array substrate, and after regulation and mixing, emits white light to present a full-color display effect.

[0058] The beneficial effects brought about by the technical solution provided by the present invention include at least:

[0059] The invention constructs a blue light sub-pixel array by growing a blue light LED epitaxial layer on a sapphire substrate; constructs a green light LED epitaxial layer on a sapphire substrate; grows a red light LED array on a GaAs substrate, and sets a multi-layer composite buffer layer between the red light LED array and the GaAs substrate; transfers the red light LED array to the sapphire substrate and cuts it into independent sub-pixel arrays; applies glue to the edges of the three-color sub-pixel arrays, stacks them in sequence and pressurizes and solidifies them; inputs signals through electrodes to drive the three-color LEDs to emit light, mixes full-color display from the back, and realizes the preparation of a full-color display array structure.

[0060] The method of the present invention can significantly improve the heat dissipation capacity of LEDs by setting a multi-layer composite buffer layer, effectively conduct heat, quickly dissipate the heat generated by LED chips, reduce chip temperature, improve luminous efficiency and stability, and improve the stability and life of the device;

[0061] The method of the present invention calculates the epitaxial layer growth rate, the resolution Res and pixel density PPI of the LED sub-pixel array, the transmittance of the epoxy resin glue, the relationship between the current and voltage of the input LED, and the RGB value of the mixed color through a formula, which can improve the luminous efficiency, color accuracy, stability and life of the LED product, reduce the waste caused by performance fluctuations and defective product rate, reduce production costs, and enhance the brand image and market competitiveness. BRIEF DESCRIPTION OF THE DRAWINGS

[0062] In order to more clearly illustrate the technical solutions and advantages in the embodiments of the present invention or the prior art, the drawings required for use in the embodiments or the prior art descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0063] Figure 1A flow chart of a method provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0064] In order to further explain the technical means and effects adopted by the present invention to achieve the predetermined invention purpose, the following is a detailed description of the preparation method of a LED full-color display array structure proposed by the present invention, its specific implementation method, structure, characteristics and effects, in combination with the accompanying drawings and preferred embodiments. In the following description, different "one embodiment" or "another embodiment" does not necessarily refer to the same embodiment. In addition, specific features, structures, or characteristics in one or more embodiments may be combined in any suitable form.

[0065] Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

[0066] The following examples are for illustrative purposes only and are not intended to limit the scope of the present invention.

[0067] The specific scheme of the method for preparing a LED full-color display array structure provided by the present invention is described in detail below with reference to the accompanying drawings.

[0068] Example

[0069] See also Figure 1 , which shows a method flow chart of a method for preparing an LED full-color display array structure provided by an embodiment of the present invention, the method comprising the following steps:

[0070] Step S1, growing a blue light LED epitaxial layer on a sapphire substrate to construct a blue light sub-pixel array;

[0071] Wherein step S1 also includes the following sub-steps:

[0072] S1-1, preparing an LED blue light sub-pixel array substrate on a sapphire transparent substrate;

[0073] S1-2, growing a blue LED epitaxial layer on a sapphire transparent substrate;

[0074] It should be noted that the growth of blue light LED epitaxial layer specifically includes the following steps: preparing a sapphire substrate, growing a low-temperature GaN buffer layer, growing an undoped GaN layer, growing an N-GaN layer, growing a multi-quantum well light-emitting layer, growing a P-GaN layer, and forming a GaN epitaxial wafer; wherein the main function of growing a low-temperature GaN buffer layer is to alleviate the lattice mismatch and thermal stress between the sapphire substrate and the subsequent GaN epitaxial layer, and improve the quality of the epitaxial layer;

[0075] S1-3, calculate the epitaxial layer growth rate R by the following formula v :

[0076]

[0077] Where k is a constant, F is a frequency factor, and E a is the activation energy, R is the gas constant, and T is the absolute temperature;

[0078] It should be noted that by calculating the epitaxial layer growth rate R v , the growth of the epitaxial layer can be accurately controlled. By regularly measuring and calculating the growth rate, deviations in the process can be discovered and corrected in a timely manner to ensure that the epitaxial layer produced meets the quality requirements;

[0079] S1-4, using an LED flip chip process to prepare a plurality of N×M arrays on the blue LED epitaxial layer, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array;

[0080] It should be noted that the preparation of the array by the flip-chip process includes the following steps: etching away the P-GaN layer, the multi-quantum well light-emitting layer and part of the N-GaN layer through a table etching process to form a plurality of independent LED same-side lead structures on the epitaxial wafer; preparing a P-side ohmic contact layer and a reflector layer on the LED table; etching away the epitaxial layer inside and outside the racetrack between the LEDs to the sapphire transparent substrate layer; connecting the P electrodes 8 in each LED array together to form the row control line 1 of the array; preparing an electrical insulating layer to expose the N electrode 9 of each LED; connecting the N electrodes 9 in each LED array together to form the column data line 2 of the array, and forming a plurality of N×M LED flip-chip structure arrays on the epitaxial wafer;

[0081] S1-5, calculate the resolution Res of the LED sub-pixel array using the following formula:

[0082] Res=N x *N y

[0083] Among them, N x is the number of pixels in the horizontal direction, N y is the number of pixels in the vertical direction;

[0084] S1-6, calculate the pixel density PPI of the LED sub-pixel array by the following formula:

[0085]

[0086] Where in is the screen diagonal in inches;

[0087] It should be noted that calculating the resolution Res and pixel density PPI of the LED sub-pixel array is to quantify the fineness and clarity of the LED display. Through the above calculation formula, the resolution and pixel density under the design scheme can be predicted, so as to make more scientific and reasonable decisions and avoid unnecessary trial and error costs;

[0088] S1-7, using precision cutting technology, the substrate is cut along the array into a number of independent LED blue light sub-pixel arrays.

[0089] Step S2, growing a green light LED epitaxial layer on a sapphire substrate to construct a green light sub-pixel array;

[0090] Wherein step S2 also includes the following sub-steps:

[0091] S2-1, preparing an LED green light sub-pixel array substrate on a sapphire transparent substrate;

[0092] S2-2, growing a green LED epitaxial layer on a sapphire transparent substrate;

[0093] S2-3, using an LED flip chip process to prepare a plurality of N×M arrays on the green LED epitaxial layer, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array;

[0094] S2-4, using precision cutting technology, the substrate is cut along the array into a number of independent LED green light sub-pixel arrays.

[0095] It should be noted that the manufacturing method of step S2 is completely consistent with that of step S1. Similarly, a low-temperature GaN buffer layer is grown in the growing green LED epitaxial layer, which can alleviate the lattice mismatch and thermal stress between the sapphire substrate and the subsequent GaN epitaxial layer, and improve the quality of the epitaxial layer.

[0096] Step S3, growing a red LED array on a GaAs substrate, and providing a multi-layer composite buffer layer between the red LED array and the GaAs substrate;

[0097] Wherein step S3 also includes the following sub-steps:

[0098] S3-1, preparing an LED red photon pixel array substrate;

[0099] S3-2, growing a red LED epitaxial layer on a GaAs substrate;

[0100] It should be noted that the growth of the red LED epitaxial layer includes the following steps: preparing a GaAs substrate, supplying source materials, growing an n-type layer, growing an active layer, and growing a p-type layer; the growth of the red LED epitaxial layer requires a strict growth temperature;

[0101] S3-3, using LED flip chip process to prepare a plurality of LED red light arrays N×M arrays with electrodes on the same surface on a GaAs substrate, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array;

[0102] S3-4, setting a multi-layer composite buffer layer between the red LED array and the GaAs substrate, first depositing a layer of aluminum nitride with high thermal conductivity as a heat conducting layer, and then depositing a layer of aluminum oxide or silicon dioxide as an isolation layer;

[0103] It should be noted that the provision of a multi-layer composite buffer layer is a key technical feature to solve this problem. The multi-layer composite buffer layer can significantly improve the heat dissipation capacity of the LED, effectively conduct heat, and reduce the chip temperature, thereby improving the luminous efficiency and stability, and improving the stability and life of the device. In addition, by using silicon dioxide as an isolation layer, it can prevent mutual diffusion and reaction between different materials, and protect the LED epitaxial layer from contamination and damage.

[0104] Step S4, transferring the red LED array to a sapphire substrate and cutting it into independent sub-pixel arrays;

[0105] Wherein step S4 also includes the following sub-steps:

[0106] S4-1, the red light array is separated from the GaAs substrate by laser lift-off technology, and the red light array is transferred to a sapphire transparent substrate by direct bonding technology;

[0107] It should be noted that laser lift-off technology and direct bonding technology can achieve lossless separation and transfer of the red light array, reducing damage to the LED epitaxial layer;

[0108] S4-2, setting the same buffer layer between the red light array and the sapphire substrate;

[0109] It should be noted that, similar to the buffer layer provided on the GaAs substrate, this step can also improve the heat dissipation performance, prevent diffusion, and ensure that the red light array can maintain consistent performance and reliability on different substrates.

[0110] S4-3, cutting the transferred red LED array to form an independent red sub-pixel array.

[0111] Step S5, applying glue to the edge of the three-color sub-pixel array, stacking them in order and pressurizing and curing them;

[0112] Wherein step S4 also includes the following sub-steps:

[0113] S5-1, evenly apply epoxy resin glue inside the edge electrode of the three-color sub-pixel array substrate to ensure that there are no bubbles and the coating is even;

[0114] S5-2, calculate the transmittance T of epoxy resin glue by the following formula:

[0115]

[0116] Where R is the reflectivity, α is the absorption coefficient of the material, and d is the thickness of the epoxy resin glue;

[0117] It should be noted that by calculating the transmittance T of epoxy resin glue, we can intuitively understand the ability of epoxy resin glue to transmit light, so as to evaluate whether it is suitable for LED packaging. By understanding the transmittance of the packaging material, we can predict the key parameters of the lamp, such as luminous efficiency, light distribution and color temperature, thus providing strong support for product design and application.

[0118] S5-3, stacking the blue, green and red sub-pixel array substrates accurately in order, and applying appropriate pressure to ensure close bonding;

[0119] It should be noted that the substrates are stacked in the order of blue, green, and red, and the purpose of applying appropriate pressure is to ensure that the sub-pixel substrates are tightly combined, reduce air gaps, and improve light transmittance and color saturation;

[0120] S5-4, placing the stacked substrates in an oven, and completely curing the encapsulation adhesive by controlling the temperature and time to form a stable full-color display array.

[0121] It should be noted that the layout of the heating elements of the oven is adjusted to ensure that the substrate is heated evenly and avoid local overheating or overcooling, so as to ensure uniform curing of the encapsulation adhesive.

[0122] Step S6, inputting signals through the electrodes to drive the three-color LEDs to emit light, and mixing a full-color display from the back;

[0123] Wherein, in step S5, the following sub-steps are also included:

[0124] S6-1, inputting driving and control signals to the electrodes at the edge of the substrate;

[0125] S6-2, calculate the relationship between the current and voltage of the input LED by the following formula:

[0126]

[0127] Where I is the current, I s is the reverse saturation current, q is the electron charge, V is the voltage, n is the ideality factor, k is the Boltzmann constant, and T is the absolute temperature;

[0128] It should be noted that by calculating the relationship between the current and voltage of the input LED through the formula, it can be ensured that the LED operates in the best working state. Reasonable current and voltage settings can reduce the heat and stress of the LED, thereby extending its service life.

[0129] S5-6, driving the LED sub-pixel arrays of red, green and blue colors to emit light simultaneously;

[0130] S6-4, calculate the mixed color C by the following formula 混 RGB values:

[0131]

[0132] Among them, a, b, c are the ratios of red, green, and blue respectively, a+b+c=1, the RGB value of red is (R, 0, 0), the RGB value of green is (0, G, 0), and the RGB value of red is (0, 0, B);

[0133] It should be noted that by calculating the RGB value, the brightness of each pixel can be accurately controlled to avoid unnecessary energy waste. When displaying darker or monochrome images, the brightness of the corresponding color channel can be reduced to reduce overall power consumption. Reasonable RGB value settings can reduce the heat and stress of the LED, thereby extending its service life and reducing maintenance costs.

[0134] S6-5, the back of the blue substrate serves as the front of the full-color display screen. Light converges from the back of the blue LED blue photon sub-pixel array substrate, and after regulation and mixing, emits white light to present a full-color display effect.

[0135] It should be noted that the preparation method of the LED full-color display array structure is an integrated workflow. The core function of the LED full-color display array is to be able to present rich and colorful colors and images. Step S5 and its sub-steps are the key to achieving this function. In the preparation method, step S5 is located after the steps of LED chip preparation and array assembly. These preliminary steps provide the necessary hardware foundation for step S5. On this basis, step S5 realizes the full-color display of LED through sub-steps such as electrode input signals, calculating the current-voltage relationship, driving LED to emit light, and calculating RGB values. It is the core link to achieve the full-color display effect.

[0136] In this way, a method for preparing an LED full-color display array structure can achieve effective heat conduction, quickly dissipate the heat generated by the LED chip, reduce the chip temperature, improve the stability and life of the device, and accurately control various parameters during the LED preparation method, thereby ensuring product quality, reducing production costs, and enhancing brand image and market competitiveness.

[0137] The embodiments described above are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, a person skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. Such modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application, and should all be included in the protection scope of the present application.

Claims

1. A method for preparing a LED full-color display array structure, characterized in that: The method includes: Step S1, growing a blue light LED epitaxial layer on a sapphire substrate to construct a blue light sub-pixel array; Step S2, growing a green light LED epitaxial layer on a sapphire substrate to construct a green light sub-pixel array; Step S3, growing a red LED array on a GaAs substrate, and providing a multi-layer composite buffer layer between the red LED array and the GaAs substrate; Step S4, transferring the red LED array to a sapphire substrate and cutting it into independent sub-pixel arrays; Step S5, applying glue to the edge of the three-color sub-pixel array, stacking them in order and pressurizing and curing them; Step S6, inputting signals through the electrodes to drive the three-color LEDs to emit light, and mixing the three-color LEDs to produce a full-color display from the back.

2. The method for preparing a LED full-color display array structure according to claim 1, characterized in that: Wherein step S1 also includes the following sub-steps: S1-1, preparing an LED blue light sub-pixel array substrate on a sapphire transparent substrate; S1-2, growing a blue LED epitaxial layer on a sapphire transparent substrate; S1-3, calculate the epitaxial layer growth rate R by the following formula v : Where k is a constant, F is a frequency factor, and E a is the activation energy, R is the gas constant, and T is the absolute temperature; S1-4, using an LED flip chip process to prepare a plurality of N×M arrays on the blue LED epitaxial layer, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array; S1-5, calculate the resolution Res of the LED sub-pixel array using the following formula: Res=N x *N y Among them, N x is the number of pixels in the horizontal direction, N y is the number of pixels in the vertical direction; S1-6, calculate the pixel density PPI of the LED sub-pixel array by the following formula: Where in is the screen diagonal in inches; S1-7, using precision cutting technology, the substrate is cut along the array into a number of independent LED blue light sub-pixel arrays.

3. The method for preparing a LED full-color display array structure according to claim 1, characterized in that: Wherein, in step S2, the following sub-steps are also included: S2-1, preparing an LED green light sub-pixel array substrate on a sapphire transparent substrate; S2-2, growing a green LED epitaxial layer on a sapphire transparent substrate; S2-3, using an LED flip chip process to prepare a plurality of N×M arrays on the green LED epitaxial layer, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array; S2-4, using precision cutting technology, the substrate is cut along the array into a number of independent LED green light sub-pixel arrays.

4. The method for preparing a LED full-color display array structure according to claim 1, characterized in that: Wherein step S3 also includes the following sub-steps: S3-1, preparing an LED red photon pixel array substrate; S3-2, growing a red LED epitaxial layer on a GaAs substrate; S3-3, using LED flip chip process to prepare a plurality of LED red light arrays N×M arrays with electrodes on the same surface on a GaAs substrate, wherein the P electrodes of each row are connected together to form a row control line of the array, and the N electrodes of each column are connected together to form a column data line of the array; S3-4, a multi-layer composite buffer layer is set between the red light LED array and the GaAs substrate, firstly a layer of aluminum nitride with high thermal conductivity is deposited as a heat conducting layer, and then a layer of aluminum oxide or silicon dioxide is deposited as an isolation layer.

5. The method for preparing a LED full-color display array structure according to claim 1, characterized in that: Wherein step S4 also includes the following sub-steps: S4-1, the red light array is separated from the GaAs substrate by laser lift-off technology, and the red light array is transferred to a sapphire transparent substrate by direct bonding technology; S4-2, setting the same buffer layer between the red light array and the sapphire substrate; S4-3, cutting the transferred red LED array to form an independent red sub-pixel array.

6. The method for preparing a LED full-color display array structure according to claim 1, characterized in that: Wherein, in step S5, the following sub-steps are also included: S5-1, evenly apply epoxy resin glue inside the edge electrode of the three-color sub-pixel array substrate to ensure that there are no bubbles and the coating is even; S5-2, calculate the transmittance T of epoxy resin glue by the following formula: Where R is the reflectivity, α is the absorption coefficient of the epoxy resin glue, and d is the thickness of the epoxy resin glue; S5-3, stacking the blue, green and red sub-pixel array substrates accurately in order, and applying appropriate pressure to ensure close bonding; S5-4, placing the stacked substrates in an oven, and completely curing the encapsulation adhesive by controlling the temperature and time to form a stable full-color display array.

7. The method for preparing a LED full-color display array structure according to claim 1, characterized in that: Wherein, in step S6, the following sub-steps are also included: S6-1, inputting driving and control signals to the electrodes at the edge of the substrate; S6-2, calculate the relationship between the current and voltage of the input LED by the following formula: Where I is the current, I s is the reverse saturation current, q is the electron charge, V is the voltage, n is the ideality factor, k is the Boltzmann constant, and T is the absolute temperature; S6-3, driving the LED sub-pixel arrays of red, green and blue colors to emit light simultaneously; S6-4, calculate the mixed color C by the following formula 混 RGB values: Among them, a, b, c are the ratios of red, green, and blue respectively, a+b+c=1, the RGB value of red is (R, 0, 0), the RGB value of green is (0, G, 0), and the RGB value of red is (0, 0, B); S6-5, the back of the blue substrate serves as the front of the full-color display screen. Light converges from the back of the blue LED blue photon sub-pixel array substrate, and after regulation and mixing, emits white light to present a full-color display effect.

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