Movable edge ring for a plasma processing system

Abstract

An edge ring system includes a movable top ring and a cover ring configured to be disposed over and radially outward of the movable top ring. The cap ring includes an annular body and a stepped portion extending radially inward from the annular body. The stepped portion is configured to extend over an outer edge of the movable top ring. An annular recess is defined in an inner radius of the cap ring below the stepped portion. The movable top ring includes an annular body and a curved outer radius. An annular middle portion is formed in the lower surface of the annular body and is configured to center the movable top ring on the movable support ring.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of priority to U.S. Provisional Patent Application No. 63 / 358,054, filed on July 1, 2022. The entire contents of the above-referenced application are incorporated herein by reference. Technical Field

[0002] The present disclosure relates generally to plasma processing systems, and more particularly to edge ring systems having a movable edge ring. Background Art

[0003] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that were not determined to be prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] Substrate processing systems process substrates such as semiconductor wafers. Examples of substrate processing include deposition, ashing, etching, cleaning, and / or other processes. A process gas mixture may be supplied to a processing chamber to process the substrate. Plasma may be used to ignite a gas to enhance a chemical reaction.

[0005] The substrate is disposed on a substrate support during processing. The edge ring includes an annular body disposed about and adjacent to a radially outer edge of the substrate. The edge ring may be used to shape or focus the plasma onto the substrate. During operation, the substrate and exposed surfaces of the edge ring are etched by the plasma. As a result, the edge ring wears and the effect of the edge ring on the plasma changes, which may adversely affect uniformity. Summary of the invention

[0006] A cover ring for an edge ring system is configured to be arranged above and radially outward of a movable top ring of the edge ring system. The cover ring includes: an annular body; a step portion extending radially inward from the annular body. The step portion is configured to extend above an outer edge of the movable top ring of the edge ring system. An annular recess is defined in an inner radius of the cover ring below the step portion, wherein the annular recess is configured to receive the outer edge of the movable top ring, and the height of the annular recess is at least 60% of the total height of the cover ring.

[0007] In other features, the cover ring is constructed of a non-conductive material. The height of the annular recess is at least 75% of the total height of the cover ring. The width of the annular recess is at least 32% of the width of the annular body. The inner radius of the cover ring is curved. The inner radius has a radius of curvature between 0.070 inches and 0.090 inches. The height of the annular recess is at least 63% of the total height of the cover ring. The width of the annular recess is at least 32% of the width of the annular body.

[0008] A movable top ring for an edge ring system comprises: an annular body and a curved outer radius. An annular center is formed in a lower surface of the annular body and is configured to center the movable top ring on a movable support ring. The lower surface comprises a plurality of downwardly directed protrusions arranged at radially inner and outer positions of the annular body to define the annular center.

[0009] In other features, the annular middle portion forms a cavity in the lower surface of the annular body, and the plurality of downwardly directed protrusions are arranged on opposite sides of the cavity. The inner sidewall of the annular middle portion is substantially vertical. The outer radius has a radius of curvature between 0.070 inches and 0.090 inches. The width of the annular middle portion is at least 75% of the width of the annular body. The depth of the annular middle portion is at least 26% of the total height of the movable top ring.

[0010] A bottom ring for an edge ring system is configured to support a cover ring of the edge ring system. The bottom ring comprises: an annular body; a first protrusion extending radially inwardly from an upper portion of a radial inner surface of the annular body; an annular recess defined in the radial inner surface of the annular body above the protrusion, the annular recess being configured to support the cover ring; and a second protrusion extending radially outwardly from an upper portion of a radial outer surface of the annular body.

[0011] In other features, the height of the annular recess is at least 6% of the total height of the bottom ring.

[0012] An edge ring system includes: a bottom ring, a cover ring and a movable top ring. The bottom ring includes an annular body; a protrusion extending radially inward from an upper portion of a radial inner surface of the annular body of the bottom ring; and an annular recess defined in the radial inner surface of the annular body above the protrusion. The cover ring is disposed above and radially inside the bottom ring and supported on the protrusion in the annular recess of the bottom ring. The cover ring includes: an annular body; a step extending radially inward from the annular body of the cover ring; and an annular recess defined in an inner radius of the cover ring below the step. The movable top ring is disposed below and radially inside the cover ring. The movable top ring includes an annular body and an annular middle portion. The radial outer portion of the annular body of the movable top ring extends below the cover ring into the annular recess of the cover ring, and the annular middle portion is formed in the lower surface of the annular body of the movable top ring.

[0013] In other features, the inner sidewall of the annular middle portion is substantially vertical. The movable top ring also includes an annular recess, which is disposed on the upper radially outer portion of the annular body. The annular recess is defined by an outer sidewall and a downward step, and the outer sidewall is substantially vertical. A plurality of downwardly directed protrusions are arranged at radially inner and outer positions of the lower surface to define the annular middle portion. The movable top ring includes a curved outer radius. The outer radius has a radius of curvature between 0.070 inches and 0.090 inches.

[0014] In other features, the annular recess of the cover ring is configured to receive an outer edge of the movable top ring, and wherein the height of the annular recess of the cover ring is at least 70% of the total height of the cover ring. The inner radius of the cover ring is curved. The inner radius has a radius of curvature between 0.070 inches and 0.090 inches. The edge ring system also includes an inner ring disposed below and radially inward of the movable top ring. The inner ring has an "L" shaped cross-section defining an outer annular recess.

[0015] In other features, the outer annular recess is arranged to receive a radially inner edge of the movable top ring. The outer diameter of the cover ring does not contact the bottom ring. The outer diameter of the movable top ring does not contact the bottom ring. When in the lowermost position, the movable top ring does not contact any portion of the inner ring, the cover ring, or the bottom ring.

[0016] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0018] Figure 1 is a functional block diagram of an example of a plasma processing system for a substrate according to the present disclosure;

[0019] Figure 2A is a side cross-sectional view of an exemplary top ring, cover ring, and bottom ring according to certain embodiments of the present disclosure;

[0020] Figure 2B for Figure 2A A top perspective view of the top ring;

[0021] Figure 2C for Figure 2A A bottom-up stereogram of the top ring;

[0022] Figure 2D for Figure 2A A side cross-sectional view of the entire top ring;

[0023] Figure 2E for Figure 2A A side cross-sectional view of a portion of the main body of the top ring;

[0024] Figure 2F for Figure 2A A bottom perspective view of the cover ring;

[0025] Figure 2G for Figure 2A A side cross-sectional view of the entire cover ring;

[0026] Figure 2H for Figure 2A A side cross-sectional view of a portion of the main body of the cover ring;

[0027] Fig.2I for Figure 2A A top perspective view of the bottom ring;

[0028] Figure 2J for Figure 2A A side cross-sectional view of a portion of a bottom ring;

[0029] Figure 2K for Figure 2A A side cross-sectional view of the entire bottom ring;

[0030] Figure 2L for Figure 2A A top-down perspective view of the inner ring;

[0031] Figure 2M for Figure 2A a side cross-sectional view of a portion of an inner ring;

[0032] Figure 2N for Figure 2A A side cross-sectional view of the entire inner ring;

[0033] Figure 3A is a side cross-sectional view of an exemplary top ring, cover ring, and bottom ring according to certain embodiments of the present disclosure;

[0034] Figure 3B for Figure 3A A top perspective view of the top ring;

[0035] Figure 3C for Figure 3A A bottom-up stereogram of the top ring;

[0036] Figure 3D for Figure 3A A side cross-sectional view of the entire top ring;

[0037] Figure 3E for Figure 3A A side cross-sectional view of a portion of the main body of the top ring;

[0038] Figure 3F for Figure 3A A bottom perspective view of the cover ring;

[0039] Figure 3G for Figure 3A A side cross-sectional view of the entire cover ring; and

[0040] Figure 3H for Figure 3A A side cross-sectional view of a portion of the main body of the cover ring.

[0041] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0042] During substrate processing, the substrate is placed on a susceptor such as an electrostatic chuck (ESC), a process gas is supplied, and plasma is excited in a process chamber. Due to exposure to the plasma, exposed surfaces of components within the process chamber may be worn.

[0043] For example, an edge ring is disposed around the radially outer edge of the substrate to shape the plasma. After processing the substrate, the exposed surface of the edge ring may be worn and located at a different height relative to the substrate. As a result, the effect of the edge ring on the plasma changes, thereby changing the effect of the process on the substrate. Therefore, in some substrate processing systems, it is necessary to open the processing chamber to replace the worn edge ring.

[0044] To reduce process variations due to edge ring wear without breaking vacuum, some process chambers deploy adjustable edge rings. These process chambers can increase the height position of the adjustable edge ring to compensate for wear or allow adjustment for different process conditions in a recipe. This approach increases the time between edge ring changes, thereby reducing replacement costs and reducing overall downtime.

[0045] As the height position of the edge ring changes, the capacitive coupling between the plasma, sheath, and / or capacitive transport structures (including the edge ring) also changes. These changes in capacitive coupling can cause uneven substrate processing over time. For example, changes in capacitive coupling can cause voltage changes on components such as the edge ring, which in turn affect the plasma sheath near the edge of the substrate, the slope of the substrate edge, etc. Capacitive coupling changes can also occur in response to other factors, such as thermal expansion of the edge ring, gap erosion between adjacent rings, and variability between parts.

[0046] In some cases, coatings, spacers, and / or minimum gaps are used to minimize capacitance changes. However, these mechanisms may reduce the overall coupling capacitance, thereby reducing the radio frequency (RF) voltage on the edge ring. For example, these mechanisms will result in a more consistent but larger gap, which will reduce the coupling capacitance and cause the plasma sheath to bend downward. Therefore, a higher geometric height of the ring around the baseplate will alleviate the downward bending of the plasma sheath and promote a more vertical tilt. For example, increasing the height of components such as edge rings, cover rings, etc. can cause the plasma sheath to bend upward.

[0047] Various edge ring arrangements according to the present disclosure are configured to reduce changes in capacitive coupling as the movable top ring wears. Figure 2A-2L 3A-H show a novel edge ring system / arrangement, an adjustable movable top ring, a cover ring, and a bottom ring. As further described below, the height position of the movable top ring relative to the top surface of the base plate, cover ring, or bottom ring can be changed by moving the movable top ring up or down using an actuator system such as a movable support and a lift pin.

[0048] Now refer to Figure 1, an example of a substrate processing system 110 that performs plasma processing and includes a movable edge ring system according to certain embodiments of the present disclosure is shown. Although a particular type of plasma processing chamber is shown, other plasma processing chambers may also be used. The substrate processing system 110 can be used to perform etching using a capacitively coupled plasma (CCP). The substrate processing system 110 includes a processing chamber 122 that surrounds the other components of the substrate processing system 110 and contains an RF plasma (if used). The substrate processing system 110 includes an upper electrode 124 and a substrate support 126, such as an electrostatic chuck (ESC). During operation, a substrate 128 is disposed on the substrate support 126.

[0049] By way of example only, the upper electrode 124 may include a gas distribution device 129, such as a showerhead that introduces and distributes the process gas. The gas distribution device 129 may include a stem that includes one end connected to the top surface of the processing chamber. The annular body is generally cylindrical and extends radially outward from the opposite end of the stem at a position spaced apart from the top surface of the processing chamber. The surface or faceplate of the annular body of the showerhead that faces the substrate includes a plurality of holes through which precursors, reactants, etching gases, inert gases, carrier gases, other process gases, or purge gases flow. Alternatively, the upper electrode 124 may include a conductive plate, and the process gas can be introduced in another manner.

[0050] The substrate support 126 includes a bottom plate 130 that serves as a lower electrode. The bottom plate 130 supports a heating plate 132, which may correspond to a ceramic multi-zone heating plate. A bonding and / or thermal resistance layer 134 may be disposed between the heating plate 132 and the bottom plate 130. The bottom plate 130 may include one or more channels 136 for allowing a coolant to flow through the bottom plate 130.

[0051] The RF generation system 140 generates and outputs an RF voltage to one of the upper electrode 124 and the lower electrode (e.g., the bottom plate 130 of the substrate support 126). The other of the upper electrode 124 and the bottom plate 130 may be DC grounded, AC grounded, or floating. By way of example only, the RF generation system 140 may include an RF generator 142 that generates RF plasma power, which is fed to the upper electrode 124 or the bottom plate 130 by a matching and distribution network 144. In other examples, the plasma may be generated inductively or remotely.

[0052] The gas delivery system 150 includes one or more gas sources 152-1, 152-2, ... and 152-N (collectively referred to as gas sources 152), where N is an integer greater than zero. The gas sources 152 are connected to the manifold 160 through valves 154-1, 154-2, ... and 154-N (collectively referred to as valves 154) and mass flow controllers (MFCs) 156-1, 156-2, ... and 156-N (collectively referred to as mass flow controllers 156). Auxiliary valves may be used between the mass flow controllers 156 and the manifold 160. Although a single gas delivery system 150 is shown, two or more gas delivery systems may be used.

[0053] The temperature controller 163 may be connected to a plurality of thermal control elements (TCEs) 164, which are arranged in the heating plate 132. The temperature controller 163 may be used to control the plurality of thermal control elements (TCEs) 164 to control the temperature of the substrate support 126 and the substrate 128. The temperature controller 163 may communicate with a coolant assembly 166 to control the flow of coolant through the channel 136. For example, the coolant assembly 166 may include a coolant pump, a reservoir, and / or one or more temperature sensors. The temperature controller 163 operates the coolant assembly 166 to selectively flow coolant through the channel 136 to cool the substrate support 126.

[0054] The valve 170 and the pump 172 may be used to exhaust reactants from the processing chamber 122. The system controller 180 may include one or more controllers for controlling components of the substrate processing system 110. In some examples, the movable edge ring 182 is radially disposed outside of the substrate 128 and exposed to the plasma during plasma processing. In other examples, the movable edge ring is located below the fixed edge ring exposed to the plasma. The edge ring height position adjustment system 184 may be used to adjust the height position of the top surface of the movable edge ring 182 relative to the substrate 128 (or to change the RF voltage of the fixed edge ring), as will be further described below. In some examples, the movable edge ring 182 may also be raised, removed by a robotic end effector, and replaced with another edge ring without breaking vacuum.

[0055] In certain embodiments, the system controller 180 controls a robot 190 to transfer a substrate and / or an edge ring to a processing chamber, as will be further described below. The system controller 180 also controls one or more actuators 192 that move lift pins to adjust the height position or tilt of the edge ring, as will be further described below. The system controller 180 may also receive outputs from one or more sensors 196 that sense the height of the edge ring. Non-limiting examples of sensors include optical sensors, physical sensors, piezoelectric sensors, ultrasonic sensors, and the like.

[0056] Now refer to Figure 2A , an example of an edge ring system 500 includes, among other components, a removable top ring 504, a cover ring 506, a bottom ring 508, and an inner ring 512. In one embodiment, the removable top ring 504 is composed of silicon carbide, while the cover ring 506, the bottom ring 508, and the inner ring 512 are composed of quartz.

[0057] Figure 2B 4 is a top perspective view of the movable top ring 504. Figure 2C It is a bottom perspective view of the movable top ring 504. Figure 2D It is a cross-sectional view of the entire movable top ring 504. Figure 2E FIG. 5 is a cross-sectional view of a portion of the main body of the movable top ring 504 . Figure 2F It is a bottom perspective view of the cover ring 506. Figure 2G It is a cross-sectional view of the entire cover ring 506. Figure 2H FIG. 5 is a cross-sectional view of a portion of the main body of the cover ring 506 . Fig.2I It is a top perspective view of the bottom ring 508. Figure 2J is a side cross-sectional view of a portion of the bottom ring 508 . Figure 2K It is a side cross-sectional view of the entire bottom ring. Figure 2L It is a top perspective view of the inner ring 512 . Figure 2M A side cross-sectional view of a portion of the inner ring 512 . Figure 2N It is a side view cross-section of the entire inner ring.

[0058] The edge ring system 500 also has a movable support ring 516 and a shield ring 520. The movable top ring 504 is directly exposed to the plasma during processing. When installed, the movable top ring 504 rests on the movable support ring 516. The actuator 522 biases the lift pins 524 into the lower surface of the movable support ring 516 to adjust the position of the movable top ring 504 relative to the substrate 526.

[0059] The movable top ring 504 includes an annular body 540. In some examples, the movable top ring 504 includes an annular center portion 542 to center the movable top ring 504 on the movable support ring 516. In some examples, the annular center portion 542 includes a cavity formed on its lower surface. In some examples, the cavity has a width sufficient to accommodate the upper portion of the movable support ring 516. The downwardly directed protrusions 544 and 546 of the movable top ring 504 are arranged at radially inner and outer positions of the annular body 540, located on opposite sides of the cavity. In some examples, an annular recess 548 is arranged at the upper and radially outer portion of the annular body 540.

[0060] In some examples, the lower portion of the movable support ring 516 includes a ring center 550 to center the movable support ring 516 relative to the bottom plate 552. In some examples, a heating layer 556 (e.g., a ceramic layer) is disposed above the bottom plate 552. A bonding layer (not shown) may be disposed between the heating layer 556 and the bottom plate 552. The bottom plate 552 may be disposed on a support plate 558.

[0061] It is understood that all edge ring systems described herein may include a centering portion 550. In some examples, the centering portion 550 includes a cavity 554 having an inner surface that includes linear or non-linear (e.g., curved) inclined portions to bias the movable support ring 516 when it is positioned on the lift pins 524. In some examples, the surfaces of the cavity include opposing surfaces that provide a centering effect. In some examples, the surfaces of the cavity have a "V" shape, a cone, a combination of straight and curved shapes, or other types of surfaces that provide a centering effect.

[0062] The shield ring 520 includes an annular body that partially surrounds the movable support ring 516. The bottom ring 508 is disposed radially outward of the movable top ring 504, the movable support ring 516, and the shield ring 520. The shield ring 520 prevents electrical coupling between the movable support ring 516 (which is powered) and the bottom ring 508. In this way, the voltage provided to the movable top ring 504 through the movable support ring 516 is maximized.

[0063] The bottom ring 508 includes an annular body 560, a first protrusion 562 extending radially inward from a middle portion of the radial inner surface of the bottom ring 508. A protrusion 564 extends radially inward from an upper portion of the radial inner surface of the bottom ring 508. In some examples, at least a portion of the protrusion 564 is disposed below the downward protrusion 546 of the movable top ring 504. The protrusion 568 protrudes radially outward from the upper surface of the bottom ring 508. The outer ring 570 is disposed radially outside the bottom ring 508 and may be made of a conductive material.

[0064] Reference Figure 2E , the inner sidewall 572 of the annular center portion 542 is substantially vertical. For example, about 0.015 inches to 0.025 inches (0.38 mm to 0.6 mm) of the inner sidewall 572 is vertical. The vertical orientation of the sidewall 572 helps center the movable top ring 504 relative to the support ring 516. Similarly, the annular recess 548 is defined by the substantially vertical outer sidewall 576. The annular recess 548 defines a downward step that helps to position the movable top ring 504 below the cover ring 506.

[0065] In one embodiment, the overall outer diameter of the movable top ring 504 is between about 12.8 inches and 13.2 inches (about 325 millimeters and 335 millimeters). The width of the annular body 540 is between about 0.5 inches and 0.6 inches (about 13 millimeters and 16 millimeters). For example, the width of the annular body 540 is configured to minimize the gap between the outer diameter of the movable top ring 504 and the cover ring 506. In addition, the width of the annular body 540 is configured to maximize the voltage potential of the movable top ring 504 for a given amount of power supplied to the movable top ring 504 from the movable support ring 516. For example, as the width (e.g., overall volume) of the movable top ring 504 increases, the power supplied may also need to increase. As an example, the width of the annular body is no greater than about 0.75 inches (about 19 millimeters).

[0066] The width of the annular recess 548 is between about 0.12 inches and 0.16 inches (about 3 mm and 4 mm). For example, the width of the annular recess 548 is at least 20% of the width of the annular body 540. The depth of the annular recess is between about 0.035 inches and 0.045 inches (about 0.8 mm and 1.2 mm). For example, the depth of the annular recess 548 is at least 25% of the total height of the movable top ring 504. The total height of the movable top ring 504 is between about 0.125 inches and 0.140 inches (about 3.1 mm and 3.6 mm).

[0067] The width of the annular middle portion 542 is between about 0.4 inches and 0.5 inches (about 10 millimeters and 13 millimeters). For example, the width of the annular middle portion 542 is at least 75% of the width of the annular body 540. In one example, the width of the contact area (e.g., overlap) between the annular middle portion 542 and the upper surface of the movable support ring 516 is at least 0.2 inches (10 millimeters). As an example, the gap between the inner side wall 572 of the annular middle portion 542 and the movable support ring is at least about 0.003 inches (about 0.076 millimeters). In some examples, the gap can be larger (e.g., between about 0.010 inches and 0.013 inches (about 0.25 millimeters and 0.33 millimeters)) to accommodate thermal expansion of the movable top ring 504 during operation. In some examples, the upper surface of the movable support ring 516 occupies at least 97% of the annular middle portion 542.

[0068] The height or depth of the middle ring portion 542 (e.g., cavity) is between about 0.040 inches and 0.050 inches (about 1.0 mm and 1.3 mm), which corresponds to the height of the downwardly directed protrusions 544 and 546. For example, the depth of the middle ring portion 542 is at least 28% of the total height of the movable top ring 504. The depth of the middle ring portion 542 is configured to provide sufficient vertical contact area between the sidewalls of the middle ring portion 542 and the upper end of the movable support ring 516 to prevent misalignment in the lateral direction when the movable top ring 504 is installed on the movable support ring 516 and when the movable support ring 516 is used to raise and lower the movable top ring 504, etc.

[0069] The cover ring 506 is located above the bottom ring 508 and has an upper surface directly exposed to the plasma. In some examples, an annular recess 578 is defined in the upper surface of the bottom ring 508. In some examples, the cover ring 506 rests on the annular recess 578. The cover ring 506 includes an annular body 580 and a step 582. When installed, the step 582 extends radially inward above the annular recess 548 of the movable top ring 504 and overlaps the annular recess 548. The annular recess 548 increases the gap between the upper surface of the movable top ring 504 and the lower surface of the step 582 to reduce the possibility of arcing between the movable top ring 504 and the cover ring 506 relative to a movable top ring without the annular recess 548. In other words, in the absence of the annular recess 548, the upper surface of the movable top ring 504 below the step 582 is closer to the lower surface of the step 582, increasing the possibility of arcing.

[0070] Additionally, a step 582 extends across the gap between the outer diameter of the movable top ring and the inner diameter of the cover ring 506 to interrupt the line of sight from the plasma environment to the movable top ring 504 and structures beneath the cover ring 506 (e.g., bottom ring 508, movable support ring 516, etc.).

[0071] like Figure 2A As shown, in some assembled configurations, the cover ring 506 has a greater height relative to the movable top ring 504 and extends above the bottom ring 508. Therefore, the height or depth of the annular recess 584 defined below the step 582 is greater than the height of the movable top ring 504. In other words, the height of the annular recess 584 from the bottom of the cover ring 506 to the bottom surface of the step 582 is greater than the height of the movable top ring 504. As shown, the cover ring 506 extends from the bottom of the recess 578 to a height above the upper surface of the bottom ring 508. In other words, the height of the cover ring 506 is greater than the height of the recess 578. The cover ring 506 also extends to a height above the upper surface of the movable top ring 504.

[0072] Dimensions such as the overall height of the movable top ring 504, the depth of the annular recess 548, and the height of the annular recess 584 are configured to define a desired gap (i.e., in the vertical direction) between the upper surface of the annular recess 548 and the lower surface of the step 582. For example, when the movable support ring 516 is in the lowermost position, the gap between the surface of the annular recess 548 and the lower surface of the step 582 is between about 0.08 inches and 0.12 inches (about 2.0 millimeters and 3.0 millimeters).

[0073] For example, in some embodiments, the movable top ring 504 is powered to control process uniformity, which may result in greater erosion of the cover ring 506 (e.g., erosion of the inner diameter of the cover ring 506). For example, the voltage on the upper surface of the movable top ring 504 below the step 582 increases the voltage on the surface of the cover ring 506, which increases the energy of ions bombarding the cover ring 506.

[0074] Therefore, since the height at the inner diameter of the cover ring 506 (and the thickness of the step 582) determines the service life of the cover ring 506, the thickness or height of the cover ring 506 is at least about 0.245 inches (about 6.2 mm) to extend the service life of the cover ring 506. In addition, in this embodiment, the width of the cover ring 506 is selected to provide a gap between the outer diameter of the cover ring 506 and the bottom ring 508. In other words, when assembled for operation, the outer diameter of the cover ring 506 does not contact the bottom ring 508. In addition, the outer diameter of the movable top ring 504 is not directly adjacent to and / or defines a gap with any inner diameter of the bottom ring 508. The gap prevents bonding between surfaces of adjacent moving and stationary ring structures (e.g., vertical services). As used herein, the term stationary refers to a ring that does not normally move after installation without breaking vacuum, and the term moveable means that after installation, the position of the ring can be adjusted without breaking vacuum via an actuator as described herein.

[0075] In one embodiment, the overall outer diameter of the cover ring 506 is between about 13.25 inches and 13.5 inches (about 336 millimeters and 343 millimeters). The width of the annular body 580 of the cover ring 506 is between about 0.34 inches and 0.39 inches (about 8.6 millimeters to 9.9 millimeters). The overall height of the cover ring 506 is between about 0.245 inches and 0.260 inches (about 6.2 millimeters to 6.6 millimeters). The height of the annular recess 584 is between about 0.185 inches and 0.195 inches (about 4.6 millimeters and 5.0 millimeters). For example, the height of the annular recess 584 is at least 60% of the overall height of the cover ring 506. In one embodiment, the height of the annular recess 584 is at least 75% of the overall height of the cover ring 506. The width of the annular recess 584 is between about 0.10 inches and 0.15 inches (about 2.5 millimeters and 3.8 millimeters). For example, the width of the annular recess 584 is at least 32% of the total width of the annular body 580. Therefore, the width of the annular recess 584 is configured to completely accommodate the portion of the movable top ring 504 corresponding to the annular recess 548. In addition, when the movable top ring 504 is in the lowest position, the outer diameter of the movable top ring 504 does not contact the inner diameter of the cover ring 506 when the movable top ring 504 is raised and lowered, etc.

[0076] Thus, the annular recess 578 of the bottom ring 508 is configured to accommodate a cover ring 506 having a height or thickness of at least about 0.20 inches (about 5.0 mm). In addition, when assembled for operation, the outer diameter of the movable top ring 504 does not contact the inner diameter of the cover ring 506, and the bottom surface of the movable top ring 504 does not contact the upper surface of the protrusion 564 of the bottom ring 508 (i.e., is not supported thereon). In this way, the movable top ring 504, the cover ring 506, and the bottom ring 508 can be manufactured with smaller tolerances because the outer diameter of the movable top ring 504 is only close to the inner diameter of the cover ring 506. In general, manufacturing tolerances must be selected to ensure that there is sufficient clearance between components to prevent binding or contact between components, to ensure that the components will fit together correctly, etc. Therefore, looser manufacturing tolerances may result in larger clearances. The above configuration allows for smaller manufacturing tolerances, which means that the maximum clearance between components is smaller. In other words, any possibility of contact between the outer diameter of the movable top ring 504 and the inner diameter of the cover ring 506 or any portion of the bottom ring 508 is eliminated while still minimizing the width of the gap.

[0077] In one embodiment, the overall outer diameter of the bottom ring 508 is between about 14.60 inches and 14.80 inches (about 370 millimeters and 376 millimeters). The overall height of the bottom ring 508 is between about 2.85 inches and 2.95 inches (about 72 millimeters and 75 millimeters). The width of the annular recess 578 is between about 0.25 inches and 0.35 inches (about 6.3 millimeters and 8.9 millimeters). The height of the annular recess 578 is between about 0.20 inches and 0.30 inches (about 5.0 millimeters and 7.6 millimeters). As described above, the annular recess 578 of the bottom ring 508 is configured to accommodate a cover ring 506 having a height or thickness of at least about 0.20 inches (about 5.0 millimeters). In addition, the width of the annular recess 578 is configured to accommodate and support the entire width of the lower surface of the cover ring. In other words, the cover ring 506 is disposed between the outer diameter of the movable top ring and the inner diameter of the bottom ring 508, thereby forming a portion of the annular recess 578. In addition, the protrusion 564 defining the lower surface of the annular recess 578 extends over the shield ring 520 and protects the shield ring 520, while the protrusion 568 extends over the outer ring 570 and protects the outer ring 570.

[0078] In an embodiment, when the movable support ring 516 is in the lowermost position, the movable top ring 504 rests on top of the movable support ring 516 and only contacts the movable support ring 516 (eg, Figure 2A ). In other words, in the lowest position, the movable top ring 504 does not contact any portion of the inner ring 512, the cover ring 506, or the bottom ring 508. Therefore, during the movement of the movable top ring 504, there is no risk of binding between the movable top ring 504 and stationary components such as the cover ring 506, the bottom ring 508, the inner ring 512, etc. In addition, since the movable top ring 504 is powered, the lack of contact between the movable top ring 504 and other components reduces the risk of electrical communication between the movable top ring 504 and other components.

[0079] In some embodiments, the inner ring 512 has a generally "L"-shaped cross-section that defines an outer annular recess 586. The outer annular recess 586 is configured to receive the downwardly directed protrusion 544 of the movable top ring 504. The total outer diameter of the inner ring 512 is between about 11.95 inches and 12.05 inches (about 303 mm and 306 mm). The inner diameter of the inner ring 512 is between about 11.55 inches and 11.75 inches (about 293 mm and 299 mm). The total height of the inner ring 512 is between about 0.175 inches and 0.195 inches (about 4.4 mm and 5.0 mm). The height of the annular recess 586 is between about 0.10 inches and 0.12 inches (about 2.54 mm and 3.048 mm). The width of the annular recess 586 is between about 0.080 inches and 0.095 inches (about 2.0 millimeters and 2.4 millimeters).

[0080] Now refer to Figure 3A Another example of an edge ring system 600 includes, among other components, a removable top ring 604, a cover ring 606, a bottom ring 608, and an inner ring 612. In one embodiment, the removable top ring 604 is composed of silicon carbide, while the cover ring 606, the bottom ring 608, and the inner ring 612 are composed of quartz.

[0081] Figure 3B 604 is a top perspective view of the movable top ring 604. Figure 3C It is a bottom perspective view of the movable top ring 604. Figure 3D It is a side cross-sectional view of the entire movable top ring 604. Figure 3E FIG. 6 is a side cross-sectional view of a portion of the body 640 of the movable top ring 604 . Figure 3F It is a bottom perspective view of the cover ring 606. Figure 3G It is a side cross-sectional view of the entire cover ring 606. Figure 3H FIG. 6 is a side cross-sectional view of a portion of the body 680 of the cover ring 606 .

[0082] In edge ring system 600, bottom ring 608 and inner ring 612 are substantially the same as bottom ring 508 and inner ring 512 described above. For example, bottom ring 608 includes an annular body 660. A first protrusion 662 extends radially inward from a middle portion of a radially inner surface of bottom ring 608. Protrusion 664 extends radially inward from an upper portion of the radially inner surface of bottom ring 608. Protrusion 668 protrudes radially outward from an upper surface of bottom ring 608.

[0083] In one embodiment, the inner ring 612 has a generally "L" shaped cross section that defines an outer annular recess 614. The outer annular recess 614 is configured to receive a downwardly directed protrusion 644 of the movable top ring 604. In one embodiment, the overall outer diameter of the bottom ring 608 is between about 14.60 inches and 14.80 inches (about 370 mm and 376 mm). The overall height of the bottom ring 608 is between about 2.85 inches and 2.95 inches (about 72 mm and 75 mm). The width of the annular recess 678 is between about 0.25 inches and 0.35 inches (about 6.3 mm and 8.9 mm). The height of the annular recess 678 is between about 0.20 inches and 0.30 inches (about 5.0 mm and 7.6 mm). For example, the height of the annular recess 678 is at least 6% of the overall height of the bottom ring 608.

[0084] The center ring portion 642 of the movable top ring 604 is defined between the downwardly directed protrusion 644 and the downwardly directed protrusion 646. In some embodiments, the inner sidewall 616 of the center ring portion 642 is substantially vertical. The vertical orientation of the sidewall 616 helps center the movable top ring 604 relative to the support ring 516. Figure 3EAs shown, the outer radius 620 of the movable top ring 604 is curved. The curved outer radius 620 reduces the electric field concentration associated with sharper corners, thereby reducing the likelihood of arcing between the surfaces of the movable top ring 604 and the cover ring 606. Arcing increases erosion of surfaces exposed to the plasma and reduces the life of components such as the movable top ring 604 and the cover ring 606.

[0085] In one embodiment, the overall outer diameter of the movable top ring 604 is between about 12.8 inches and 13.2 inches (about 325 mm and 335 mm). The width of the annular body 640 of the movable top ring 604 is between about 0.5 inches and 0.6 inches (about 13 mm and 16 mm). The overall height of the movable top ring 604 is between about 0.135 inches and 0.150 inches (about 3.4 mm and 3.8 mm). The width of the annular middle portion 642 is between about 0.4 inches and 0.5 inches (about 10 mm and 13 mm). For example, the width of the annular middle portion 642 is at least 75% of the width of the annular body 640. The height or depth of the annular middle portion 642 is between about 0.040 inches and 0.050 inches (about 1.0 mm and 1.3 mm). For example, the depth of the annular middle portion 642 is at least 26% of the overall height of the movable top ring 604.

[0086] The radius of curvature of the outer radius 620 is between about 0.070 inches and 0.090 inches (about 1.7 millimeters and 2.3 millimeters). The radius of curvature is configured to reduce electric field concentration associated with sharper corners, such as corners where a right angle or chamfered transition occurs from the upper surface of the movable top ring 604 to the sidewall. Therefore, the larger the radius of curvature, the greater the reduction in electric field concentration. However, if the radius of curvature is too large, the vertical gap / interface between the outer diameter of the movable top ring 604 and the inner diameter of the cover ring 606 will be significantly reduced or eliminated, thereby allowing a direct line of sight to structures below the movable top ring 604 and the cover ring 606. Therefore, the above-mentioned radius of curvature is configured so that the vertical portion of the outer diameter of the movable top ring 604 is between about 0.040 inches and 0.075 inches (about 1.0 millimeters and 1.9 millimeters).

[0087] exist Figure 3A, the inner radius 624 of the cover ring 606 is curved in a similar manner to the outer radius 620 to reduce electric field concentration. In addition, the cover ring 606 has a greater height relative to the movable top ring 604 and extends above the bottom ring 608. Therefore, the height or depth of the annular recess 628 defined below the step 682 is greater than the height or depth of the movable top ring 604. In other words, the height of the annular recess 628 from the bottom of the cover ring 606 to the bottom surface of the step 682 is greater than the height of the movable top ring 604. As shown, the cover ring 606 extends from the bottom of the recess 678 and the bottom of the movable top ring 604 to a height above the upper surface of the bottom ring 608. In other words, the height of the cover ring 606 is greater than the height of the recess 678 to extend the service life of the cover ring 606. The cover ring 606 also extends to a height above the upper surface of the movable top ring 604.

[0088] In one embodiment, the overall outer diameter of the cover ring 606 is between about 13.25 inches and 13.5 inches (about 336 millimeters and 343 millimeters). The width of the annular body 680 of the cover ring 606 is between about 0.33 inches and 0.37 inches (about 8.3 millimeters and 9.4 millimeters). The overall height of the cover ring 606 is between about 0.345 inches and 0.360 inches (about 8.7 millimeters and 9.2 millimeters). The height of the annular recess 628 is between about 0.230 inches and 0.250 inches (about 5.8 millimeters and 6.4 millimeters). For example, the height of the annular recess 628 is at least 63% of the overall height of the cover ring 606. The width of the annular recess 628 is between about 0.10 inches and 0.15 inches (about 2.5 millimeters and 3.8 millimeters). For example, the width of the annular recess 628 is at least 32% of the width of the annular body 680. The inner radius 624 has a radius of curvature between approximately 0.070 inches and 0.090 inches (approximately 1.7 millimeters and 2.3 millimeters).

[0089] In the foregoing embodiments, some edge rings are made of a conductive material or a conductive or non-conductive material with a conductive coating. As used herein, conductive means a material with a resistivity less than or equal to 10 4 Ωcm. For example, the resistivity of doped silicon is 0.05Ωcm, the resistivity of silicon carbide is 1Ωcm-300Ωcm, and the resistivity of metals such as aluminum and copper is about 10Ωcm-7Ωcm. In some examples, the edge ring of the present disclosure is made of a non-conductive material or a conductive or non-conductive material with a non-conductive coating. As used herein, non-conductive means a resistivity greater than 10 4 Ωcm of material / coating.

[0090] The conductive ring can be made of one or more substrates, one or more coatings, and / or one or more coatings. Non-limiting examples of substrates include silicon, silicon carbide, titanium, graphite, quartz, and / or ceramics. Non-limiting examples of coatings include aluminum coatings. Non-limiting examples of coatings include perfluoroalkoxy (PFA), atomic layer deposition (ALD) aluminum oxide (Al 2 O 3 ), ALD yttrium oxide (yttriumoxide) or yttrium oxide (Y 2 O 3 ) and / or anodized coating. For example, the conductive material may include anodized titanium, silicon with a PFA coating, doped silicon, silicon with an aluminum coating and anodized coating, silicon with ALD aluminum oxide, silicon with an ALD yttria coating, silicon carbide, graphite with a PFA coating, graphite with an aluminum coating and anodized coating, graphite with an ALD aluminum oxide coating, graphite with an ALD yttria coating, or other suitable materials. Non-limiting examples of non-conductive materials include quartz and ceramics. In the foregoing embodiments, one or more rings may be formed by one or more structures in radial, axial or other directions.

[0091] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not explicitly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0092] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected", "engaged", "coupled", "adjacent", "next to", "on top of", "above", "below", and "disposed". Unless the relationship between a first and a second element is explicitly described as "direct", when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intermediate elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intermediate elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C". As used herein, the term "about" means within + / -10% of a given value and / or within + / -5% of a given percentage.

[0093] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or system type, the controller can be programmed to control any of the processes disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out of tools connected or docked with specific systems and other transfer tools and / or load locks.

[0094] In general, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing specific processing on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0095] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or may be all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, to change the parameters of the current processing, set processing steps to follow the current processing, or start a new processing. In some examples, a remote computer (e.g., a server) may provide a processing recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of processing to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose (e.g., processing and control as described herein). An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control processing on the chamber.

[0096] Exemplary systems may include, but are not limited to, plasma etching chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0097] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A cover ring for an edge ring system, the cover ring being configured to be arranged above and radially outward of a movable top ring of the edge ring system, the cover ring comprising: Ring-shaped body; a step extending radially inwardly from the annular body, wherein the step is configured to extend over an outer edge of the movable top ring of the edge ring system; and An annular recess is defined in an inner radius of the cover ring below the step, wherein the annular recess is configured to receive the outer edge of the movable top ring, and wherein the height of the annular recess is at least 60% of the total height of the cover ring.

2. The cover ring according to claim 1, wherein the cover ring is made of a non-conductive material. 3 . The cover ring of claim 1 , wherein the height of the annular recess is at least 75% of the total height of the cover ring. 4 . The cover ring of claim 1 , wherein the width of the annular recess is at least 32% of the width of the annular body. The cover ring of claim 1 , wherein the inner radius of the cover ring is curved.

6. The cover ring of claim 5, wherein the inner radius has a radius of curvature between 0.070 inches and 0.090 inches.

7. The cover ring of claim 5, wherein the height of the annular recess is at least 63% of the total height of the cover ring.

8. The cover ring of claim 5, wherein the width of the annular recess is at least 32% of the width of the annular body.

9. A removable top ring for an edge ring system, the removable top ring comprising: Ring-shaped body; an outer radius of the annular body, wherein the outer radius is curved; and An annular center portion is formed in the lower surface of the annular body and is configured to center the movable top ring on the movable support ring, wherein the lower surface includes a plurality of downwardly directed protrusions, and the plurality of downwardly directed protrusions are arranged at radially inner and outer positions of the annular body to define the annular center portion.

10. The movable top ring of claim 9, wherein the annular middle portion forms a cavity in the lower surface of the annular body, and wherein the plurality of downwardly directed protrusions are arranged on opposite sides of the cavity.

11. The removable top ring of claim 9, wherein an inner side wall of the annular middle portion is substantially vertical.

12. The removable top ring of claim 9, wherein the outer radius has a radius of curvature between 0.070 inches and 0.090 inches.

13. The removable top ring of claim 9, wherein the width of the annular middle portion is at least 75% of the width of the annular body.

14. The removable top ring of claim 9, wherein the depth of the ringed middle portion is at least 26% of the total height of the removable top ring.

15. A bottom ring for an edge ring system, the bottom ring being configured to support a cover ring of the edge ring system, the bottom ring comprising: Ring-shaped body; a first protrusion extending radially inwardly from an upper portion of the radial inner surface of the annular body; an annular recess defined in the radially inner surface of the annular body above the projection, the annular recess configured to support the cover ring; and A second protrusion extends radially outward from an upper portion of the radially outer surface of the annular body.

16. The base ring of claim 15, wherein the height of the annular recess is at least 6% of the total height of the base ring.

17. An edge ring system comprising: a bottom ring comprising (i) an annular body, (ii) a protrusion extending radially inwardly from an upper portion of a radially inner surface of the annular body of the bottom ring, and (iii) an annular recess defined in the radially inner surface of the annular body above the protrusion; a cover ring disposed above and radially inwardly of the base ring and supported on the protrusion within the annular recess of the base ring, the cover ring comprising (i) an annular body, (ii) a step extending radially inwardly from the annular body of the cover ring, and (iii) an annular recess defined in an inner radius of the cover ring below the step; as well as A movable top ring is arranged below and radially inwardly of the cover ring, the movable top ring comprising (i) an annular body, wherein the radially outer portion of the annular body of the movable top ring extends below the cover ring into the annular recess of the cover ring, and (ii) an annular middle portion formed in the lower surface of the annular body of the movable top ring.

18. The edge ring system of claim 17 wherein an inner sidewall of the annular mid-portion is substantially vertical.

19. The edge ring system of claim 18, wherein the movable top ring further comprises: an annular recess disposed at an upper radially outer portion of the annular body, wherein the annular recess is defined by an outer side wall and a downward step, and wherein the outer side wall is substantially vertical; and A plurality of downwardly directed protrusions are arranged at radially inner and outer positions of the lower surface to define the annular middle portion.

20. The edge ring system of claim 17, said movable top ring comprising a curved outer radius.

21. The edge ring system of claim 20 wherein the outer radius has a radius of curvature between 0.070 inches and 0.090 inches.

22. The edge ring system of claim 17, wherein the annular recess of the cover ring is configured to receive an outer edge of the movable top ring, and wherein a height of the annular recess of the cover ring is at least 70% of an overall height of the cover ring.

23. The edge ring system of claim 17 wherein the inner radius of the cover ring is curved.

24. The edge ring system of claim 23 wherein the inner radius has a radius of curvature between 0.070 inches and 0.090 inches.

25. The edge ring system of claim 17, further comprising an inner ring disposed below and radially inward of the movable top ring, wherein the inner ring has an "L" shaped cross-section defining an outer annular recess.

26. The edge ring system of claim 25, wherein the outer annular recess is arranged to receive a radially inner edge of the movable top ring.

27. The edge ring system of claim 26 wherein an outer diameter of the cover ring does not contact the base ring.

28. The edge ring system of claim 26, wherein an outer diameter of the movable top ring does not contact the bottom ring.

29. The edge ring system of claim 26, wherein: When in the lowermost position, the movable top ring does not contact any portion of the inner ring, the cover ring, or the bottom ring.

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