Radio frequency front-end module and communication equipment

Abstract

The invention relates to a radio frequency front-end module and communication equipment. The radio frequency front-end module comprises a power amplification circuit and a duplexer, wherein the power amplification circuit is used for supporting power amplification processing of a first radio frequency signal; two first ends of the duplexer are correspondingly connected with the radio frequency transceiver and the power amplification circuit respectively and are used for supporting filtering processing on part of frequency bands of the first radio frequency signal and the second radio frequency signal, and the frequency range of the second radio frequency signal is within the frequency range of the first radio frequency signal; the total suppression of the first radio frequency signal by the transmitting path of the first radio frequency signal meets the 3GPP communication standard, and the transmitting path is provided with a power amplification circuit and a duplexer. By adopting the radio frequency front-end module, the cost of the radio frequency front-end module can be reduced.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency front-end module and communication equipment. Background Art

[0002] The 3GPP protocol stipulates that when radio frequency signals are transmitted, there are control requirements for the power within a specific frequency band. For example, the power within the 860-890MHz frequency band is required to be no higher than -50dBm.

[0003] However, the duplexers in current RF front-end modules often need to use specific models of duplexers to meet the above requirements, and the prices of specific models of duplexers are often more expensive, resulting in higher costs for RF front-end modules. Summary of the invention

[0004] Based on this, it is necessary to provide a radio frequency front-end module and a communication device that can reduce the cost of the radio frequency front-end module.

[0005] In a first aspect, the present application provides a radio frequency front-end module, comprising:

[0006] A power amplifier circuit, connected to the radio frequency transceiver, for supporting power amplification processing of the first radio frequency signal;

[0007] A duplexer, wherein two first ends of the duplexer are respectively connected to the RF transceiver and the power amplifier circuit, and are used to support filtering of a partial frequency band of the first RF signal and a second RF signal, wherein the frequency range of the second RF signal is within the frequency range of the first RF signal;

[0008] The total suppression of the first radio frequency signal by the transmission path of the first radio frequency signal meets the 3GPP communication standard, and the power amplifier circuit and the duplexer are arranged on the transmission path.

[0009] In a second aspect, the present application provides a communication device, including a radio frequency transceiver, an antenna, and the radio frequency front-end module as described above, wherein the radio frequency front-end module is connected to the radio frequency transceiver and the antenna respectively.

[0010] The above-mentioned RF front-end module and communication equipment include a power amplifier circuit and a duplexer, wherein the power amplifier circuit supports power amplification processing of the first RF signal; the two first ends of the duplexer are respectively connected to the RF transceiver and the power amplifier circuit, and can support filtering processing of part of the frequency band of the first RF signal and the second RF signal. The duplexer can replace the specific model duplexer corresponding to the frequency band of the first RF signal, and the cost is lower than that of the specific model duplexer. For example, when the first RF signal is an N26 frequency band signal, the lower-cost N5 duplexer can be used to replace the higher-cost N26 duplexer. Since the frequency band supported by the N5 duplexer is within the frequency band supported by the N26 duplexer, it can also support filtering processing of N26 or B26 frequency band signals. In addition, a power amplifier circuit and a duplexer are provided on the transmission path. By improving the suppression of the first RF signal by the power amplifier circuit, the total suppression of the first RF signal by the transmission path of the first RF signal can meet the 3GPP communication standard. Improving the suppression of the power amplifier circuit only requires adjusting the parameters of the circuit elements in the power amplifier circuit, and there is no need to add additional circuit elements in the power amplifier circuit. Therefore, the cost of the power amplifier circuit remains basically unchanged. In this case, since the cost of the duplexer of the RF front-end module is reduced, the overall cost of the RF front-end module is reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0012] Figure 1 It is the AMAM curve diagram of the power amplifier circuit in the RF front-end module in the traditional technology;

[0013] Figure 2 It is an AMPM curve diagram of the power amplifier circuit in the RF front-end module in the traditional technology;

[0014] Figure 3 It is a schematic diagram of the transmission performance of the N26 duplexer;

[0015] Figure 4 This is a schematic diagram of the structure of a radio frequency front-end module in one embodiment of the present application;

[0016] Figure 5 This is a structural diagram of a radio frequency front-end module in another embodiment of the present application;

[0017] Figure 6 This is a structural diagram of a radio frequency front-end module in yet another embodiment of the present application;

[0018] Figure 7 This is a schematic structural diagram of a first amplifying unit in one embodiment of the present application;

[0019] Figure 8 It is the transmission performance diagram of N5 duplexer;

[0020] Fig. 9 This is an AMAM curve diagram of a power amplifier circuit in one embodiment of the present application;

[0021] Fig.10 An AMPM curve diagram of a power amplifier circuit in one embodiment of the present application;

[0022] Fig.11 This is a structural diagram of a radio frequency front-end module in another embodiment of the present application;

[0023] Fig.12 This is a structural diagram of a radio frequency front-end module in another embodiment of the present application;

[0024] Fig.13 This is a structural diagram of a radio frequency front-end module in another embodiment of the present application;

[0025] Fig.14 This is a structural block diagram of a communication device in yet another embodiment of the present application.

[0026] Description of reference numerals:

[0027] 11-RF transceiver, 12-power amplifier circuit, 121-first amplifier unit, 1210-low frequency signal power amplifier, 1211-first amplifier subunit, 1212-first matching subunit, 1213-second amplifier subunit, 1214-second matching subunit, 122-first switch circuit, 1220-SP5T switch, 123-second amplifier unit, 1230-intermediate frequency signal power amplifier, 124-third amplifier unit, 1240-high frequency signal power amplifier, 13-duplexer, 130-N5 duplexer, 14-second switch Circuit, 140-SP16T switch, 15-multi-mode multi-frequency power amplifier, 16-first transmitting circuit, 161-first power amplifier, 162-first filter, 17-second transmitting circuit, 171-second power amplifier, 172-second filter, 110-RF front-end transmitting module, 20-mobile phone, 21-memory, 211-operating system, 212-communication module, 213-GPS module, 22-processing circuit, 23-peripheral device interface, 24-RF system, 25-signal line, 26-I / O subsystem, 261-button. DETAILED DESCRIPTION

[0028] In order to facilitate understanding of the present application, the present application will be described more fully below with reference to the relevant drawings. Embodiments of the present application are provided in the drawings. However, the present application can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present application more thorough and comprehensive.

[0029] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application.

[0030] It is understood that the terms "first", "second", etc. used in this application may be used herein to describe various elements, but these elements are not limited by these terms. These terms are only used to distinguish a first element from another element. For example, a first inductor may be referred to as a second inductor, and similarly, a second inductor may be referred to as a first inductor without departing from the scope of this application. Both the first inductor and the second inductor are inductors, but they are not the same inductor.

[0031] It can be understood that the “connection” in the following embodiments should be understood as “electrical connection”, “communication connection”, etc. if the connected circuits, modules, units, etc. have electrical signals or data transmission between each other.

[0032] It can be understood that “at least one” means one or more, “plurality” means two or more, and “at least a portion of an element” means a part or all of an element.

[0033] When used herein, the singular forms "a", "an", and "said / the" may also include plural forms, unless the context clearly indicates otherwise. It should also be understood that the terms "include / comprise" or "have" and the like specify the presence of stated features, wholes, steps, operations, components, parts, or combinations thereof, but do not exclude the possibility of the presence or addition of one or more other features, wholes, steps, operations, components, parts, or combinations thereof. At the same time, the term "and / or" used in this specification includes any and all combinations of the relevant listed items.

[0034] The 3GPP protocol stipulates that when radio frequency signals are transmitted, there are control requirements for the power within a specific frequency band. For example, the power within the 860-890MHz frequency band is required to be no higher than -50dBm.

[0035] However, the duplexers in current RF front-end modules often need to use specific models of duplexers to meet the above requirements, and specific models of duplexers are relatively expensive, resulting in higher costs for RF front-end modules.

[0036] Taking the N26 duplexer as an example, the uplink frequency range of N26 is 814-849MHz, and the downlink frequency range is 859-894MHz. Generally, in traditional RF front-end modules, assuming that the antenna port transmit power is 24dBm, the corresponding transmit power of the power amplifier circuit is 29dBm. Figure 1 As shown in FIG. 1 , the AMAM (Amplitude Modulation-Amplitude Modulation) of the power amplifier circuit in the RF front-end module is 28 dB. Figure 2 As shown in the figure, the AMPM (Amplitude Modulation-Phase Modulation) phase is -3.88° (AMAM represents the distortion characteristic of the output signal amplitude changing with the input signal amplitude, while AMPM represents the distortion characteristic of the output signal phase changing with the input signal amplitude), corresponding to the coexistence spurious of -36dBm. The power amplifier circuit in the RF front-end module corresponds to the coexistence spurious of -36dBm. Figure 2 Therefore, in order to meet the 3GPP requirements, an N26 duplexer is installed, as shown in Figure 3 As shown in the figure, the suppression of the N26 duplexer at 860MHz is more than 20dB. Therefore, the final total suppression of the N26 duplexer and the power amplifier circuit in the RF front-end module is -56dBm, which meets the 3GPP requirements. However, the N26 duplexer is expensive, resulting in a higher cost for the RF front-end module.

[0037] Based on the above problems, Figure 4 As shown, the present application provides a radio frequency front-end module, including: a power amplifier circuit 12 and a duplexer 13.

[0038] The power amplifier circuit 12 is connected to the RF transceiver 11 to support power amplification processing of the RF signal.

[0039] The input end of the power amplifier circuit 12 is connected to the output port of the RF transceiver 11, and the power amplifier circuit 12 is used to perform power amplification processing on the low-frequency signal input by the RF transceiver 11 and then output it. The RF signal can be a RF signal of any frequency band of a 4G LTE signal or a 5G NR signal.

[0040] The two first ends of the duplexer 13 are respectively connected to the RF transceiver 11 and the power amplifier circuit 12, and are used to support filtering processing of a partial frequency band of the first RF signal and the second RF signal, wherein the frequency range of the second RF signal is within the frequency range of the first RF signal.

[0041] The duplexer 13 can support filtering of a partial frequency band of the first RF signal and the second RF signal. The duplexer 13 can replace the specific model duplexer 13 corresponding to the frequency band of the first RF signal, and the cost is lower than that of the specific model duplexer 13.

[0042] Exemplarily, the duplexer 13 of the present application may be an N5 duplexer, the frequency band of the first RF signal may be N26, and the frequency band of the second RF signal may be N5. Among them, the uplink frequency band range of N26 is 814-849MHz, and the downlink frequency band range is 859-894MHz. The uplink frequency band range of N5 is 824-849MHz, and the downlink frequency band range is 869-894MHz. From the above-mentioned frequency band range, the uplink frequency band of N5 is within the uplink frequency band range of N26, and the downlink frequency band of N5 is within the downlink frequency band range of N26. Therefore, the N5 duplexer can replace the N26 duplexer, and the cost of the N5 duplexer is lower than that of the N26 duplexer, so the cost of the RF front-end module can be reduced.

[0043] The above-mentioned RF front-end module includes a power amplifier circuit 12 and a duplexer 13, wherein the power amplifier circuit 12 supports power amplification processing of the first RF signal; the two first ends of the duplexer 13 are respectively connected to the RF transceiver 11 and the power amplifier circuit 12, and can support filtering processing of part of the frequency band of the first RF signal and the second RF signal. The duplexer 13 can replace the specific model duplexer 13 corresponding to the frequency band of the first RF signal, and the cost is lower than that of the specific model duplexer 13. For example, when the first RF signal is an N26 frequency band signal, the lower-cost N5 duplexer can be used to replace the higher-cost N26 duplexer. Since the frequency band supported by the N5 duplexer is within the frequency band supported by the N26 duplexer, it can also support filtering processing of N26 or B26 frequency band signals. In addition, a power amplifier circuit 12 and a duplexer 13 are provided on the transmitting path. By improving the suppression of the first RF signal by the power amplifier circuit 12, the total suppression of the first RF signal by the transmitting path of the first RF signal can meet the 3GPP communication standard. To improve the suppression of the power amplifier circuit 12, it is only necessary to adjust the parameters of the circuit elements in the power amplifier circuit 12, and there is no need to add additional circuit elements in the power amplifier circuit 12. Therefore, the cost of the power amplifier circuit 12 remains basically unchanged. In this case, since the cost of the duplexer 13 of the RF front-end module is reduced, the overall cost of the RF front-end module is reduced.

[0044] In one embodiment, Figure 5 As shown, the power amplifier circuit 12 at least includes: a first amplifying unit 121 and a first switching circuit 122 .

[0045] The input end of the first amplifying unit 121 is used to connect to the RF transceiver 11, the output end of the first amplifying unit 121 is connected to the output port of the first switching circuit 122, the output port of the first amplifying unit 121 is connected to the first end of the first switching circuit 122, and the second end of the first switching circuit 122 is connected to the duplexer 13.

[0046] The first RF signal may be a low frequency signal, and the first amplifying unit 121 may be used to support power amplification processing of the low frequency signal. The first switch circuit 122 may be a SPnT switch, a P port of the SPnT switch is connected to the output end of the first amplifying unit 121, a T port is connected to the duplexer 13, and n is a positive integer greater than or equal to 2, for example, n=5. The first amplifying unit 121 may be a power amplifier.

[0047] It can be understood that the input end of the first amplifying unit 121 can be connected to the RF signal output port of the RF transceiver 11 to receive the first RF signal output by the RF transceiver 11, and the first amplifying unit 121 amplifies the received first RF signal. At this time, the first switching circuit 122 is turned on to connect the first amplifying unit 121 and the duplexer 13, and the amplified first RF signal is transmitted to the duplexer 13 through the first switching circuit 122. The duplexer 13 performs filtering processing on the amplified first RF signal and then transmits it to the antenna ANT0 for transmission, thereby realizing the transmission processing of the first RF signal. It can be seen from the transmission path of the first RF signal that the duplexer 13, the first amplifying unit 121 and the first switching circuit 122 are located on the transmission path of the first RF signal. Therefore, the suppression effect of the power amplifier circuit 12 can be improved by adjusting the parameters of the first amplifying unit 121, so that the total suppression of the first RF signal by the transmission path of the first RF signal meets the 3GPP communication standard.

[0048] In one embodiment, Figure 6 As shown, the first amplifying unit 121 includes: a first amplifying subunit 1211 , a first matching subunit 1212 , a second amplifying subunit 1213 and a second matching subunit 1214 which are cascaded in sequence.

[0049] The first end of the first amplifying subunit 1211 is used to connect to the RF transceiver 11, the second end of the first amplifying subunit 1211 is connected to the first end of the first matching subunit 1212, the second end of the first matching subunit 1212 is connected to the first end of the second amplifying subunit 1213, the second end of the second amplifying subunit 1213 is connected to the first end of the second matching subunit 1214, and the second end of the second matching subunit 1214 is respectively connected to the load and the first end of the first switch circuit 122; the first amplifying subunit 1211 is used to input the RF transceiver 11 The low-frequency signal is preliminarily amplified, the first matching subunit 1212 is used to match the impedance between the first amplifying subunit 1211 and the second amplifying subunit 1213, the first amplifying subunit 1211 is used to perform secondary amplification on the low-frequency signal after the preliminarily amplified processing, the second matching subunit 1214 is used to match the impedance between the second amplifying subunit 1213 and the load, wherein the first end of the first amplifying subunit 1211 serves as the input end of the first amplifying unit 121, and the second end of the second matching subunit 1214 serves as the output end of the first amplifying unit 121.

[0050] Among them, the first amplifier subunit 1211 is a first triode or a first MOS tube. Taking the first amplifier subunit 1211 as an example of a first triode, the first triode can be an NPN transistor. The base of the first triode can be connected to the RF transceiver 11 to receive the first RF signal; the emitter of the first triode can be connected to the common ground terminal, and the collector of the first triode is used to receive the first power supply signal. By controlling the size of the first power supply signal so that the first power supply signal is at a reasonable value, the emitter junction of the first triode can be forward biased, and the collector junction of the first triode can be reversely deflected, so that the base current controls the collector current, so that the first triode has a current amplification effect, thereby performing preliminary amplification processing on the first RF signal.

[0051] The first RF signal after preliminary amplification processing is transmitted to the second amplifying subunit 1213 via the first matching subunit 1212. The first matching subunit 1212 can match the impedance between the first amplifying subunit 1211 and the second amplifying subunit 1213. By adjusting the parameters of the circuit elements in the first matching subunit 1212, the impedance between the first amplifying subunit 1211 and the second amplifying subunit 1213 can be adjusted, thereby changing the suppression of the first RF signal by the power amplifier circuit 12.

[0052] The second amplifier subunit 1213 can be a second triode or a second MOS tube. Taking the second amplifier subunit 1213 as a second triode as an example, the second triode can also be an NPN transistor. The base of the second triode can be connected to the second end of the first matching subunit 1212 to receive the first radio frequency signal after preliminary amplification; the emitter of the second triode can be connected to the common ground end, and the collector of the second triode is used to receive the second power supply signal. By controlling the size of the second power supply signal so that the second power supply signal is at a reasonable value, the emitter junction of the second triode can be forward biased, and the collector junction of the second triode can be reversely deflected, so that the base current controls the collector current, so that the second triode has a current amplification effect, thereby performing secondary amplification processing on the first radio frequency signal. The first radio frequency signal after secondary amplification is output to the first end of the first switch circuit 122 through the second matching subunit 1214.

[0053] In this embodiment, through the cooperation of the first amplifying subunit 1211, the first matching subunit 1212, the second amplifying subunit 1213 and the second matching subunit 1214, power amplification processing of the first RF signal can be achieved. In addition, the suppression of the first RF signal by the power amplifying circuit 12 can be improved by adjusting the parameters of the circuit elements in the first matching subunit 1212, so that the total suppression of the first RF signal by the transmission path of the first RF signal meets the 3GPP communication standard.

[0054] In one embodiment, Figure 7 As shown, the first matching subunit 1212 includes: a first inductor L1, a first capacitor C1 and a second inductor L2.

[0055] The first end of the first inductor L1 is used to receive the first power signal Vcc1 , and the second end of the first inductor L1 is connected to the second end of the first amplifying subunit 1211 .

[0056] In the application, the first power signal Vcc1 can be output by the first power supply, and the first inductor L1 is located between the first power supply and the first amplifying subunit 1211. Based on the characteristics of the first inductor L1, the first inductor L1 can isolate the first RF signal from entering the first power supply, thereby preventing the first RF signal from interfering with the first power supply outputting the first power signal Vcc1.

[0057] The first end of the first capacitor C1 is connected to the second end of the first inductor L1 and the second end of the first amplifying subunit 1211 respectively; the first end of the second inductor L2 is used to receive the second power signal Vcc2.

[0058] The second end of the second inductor L2 is connected to the second end of the first capacitor C1 and the first end of the second amplifying subunit 1213 respectively.

[0059] In combination with the foregoing embodiment, when the first amplifying subunit 1211 includes a first triode Q1, the base of the first triode Q1 can be connected to the RF transceiver 11, the emitter of the first triode Q1 can be connected to the common ground, and the collector of the first triode Q1 is connected to the second end of the first inductor L1.

[0060] Among them, the first inductor L1 and the first capacitor C1 are connected in parallel, the second inductor L2 and the first capacitor C1 are connected in parallel, the first inductor L1 and the first capacitor C1, the first inductor L1, the first capacitor C1 and the second inductor L2 form a matching circuit. It can be understood that by changing the parameters of the first inductor L1, the first capacitor C1 and the second inductor L2, the suppression of the first RF signal by the power amplifier circuit 12 can be changed, so that the total suppression of the first RF signal by the transmission path of the first RF signal meets the 3GPP communication standard. In the application, the parameters of the first inductor L1, the first capacitor C1 and the second inductor L2 can be determined by simulation processing.

[0061] In one embodiment, the parameter settings of the first inductor L1 , the first capacitor C1 , and the second inductor L2 meet preset conditions, so that the suppression of the first RF signal by the first amplifying unit 121 is less than or equal to -37 dBm.

[0062] Among them, taking the first RF signal as N26 as an example, for the traditional power amplifier circuit, when the N26 transmission power is 24dBm, the power in the range of 859-860MHz is -36dBm, and the transmission path insertion loss of the first RF signal is generally 3dB. Therefore, in order to meet the 3GPP requirements, as a replacement for the N26 duplexer, such as Figure 8 As shown, the suppression of the N5 duplexer at 859-860MHz is 10dB, so the total suppression of the first RF signal by the transmission path of the first RF signal is -49dBm, which obviously does not meet the 3GPP requirements. After adjusting the parameters of the first inductor L1, the first capacitor C1 and the second inductor L2 so that the parameter settings of the first inductor L1, the first capacitor C1 and the second inductor L2 meet the preset conditions, the suppression of the first RF signal by the first amplification unit 121 can be less than or equal to -37dBm, and then the total suppression of the first RF signal by the transmission path of the first RF signal is less than or equal to -50dBm, thereby meeting the 3GPP requirements.

[0063] In one embodiment, the inductance of the first inductor L1 is 2.8nH-3.5nH, the capacitance of the first capacitor C1 is 2pf-9pF, and the inductance of the second inductor L2 is 1.7nH-2.1nH.

[0064] For example, when the inductance of the first inductor L1 is 3.3 nH, the capacitance of the first capacitor C1 is 4 pF, and the inductance of the second inductor L2 is 1.9 nH, Fig. 9 and Figure 1 As shown, the entire AMAM of the power amplifier circuit 12 increases by 2dB; Fig.10 As shown in the figure, AMPM is controlled within 1° (the coexistence spurious index of PA is strongly correlated with AMPM. The farther AMPM is from 0°, the worse the coexistence spurious index is), which corresponds to a power of less than or equal to -37dBm in the range of 859 to 860MHz. Then, the final total suppression is -50dBm, which meets the 3GPP requirements.

[0065] In this embodiment, by setting the inductance of the first inductor L1 to 2.8nH-3.5nH, the capacitance of the first capacitor C1 to 2pf-9pF, and the inductance of the second inductor L2 to 1.7nH-2.1nH, the suppression of the first RF signal by the first amplification unit 121 can be less than or equal to -37dBm, and then when the duplexer 13 is an N5 duplexer, the total suppression of the first RF signal by the transmission path of the first RF signal can be less than or equal to -50dBm, meeting the 3GPP communication standard.

[0066] In one embodiment, please refer to Figure 7 The second matching subunit 1214 may include a third inductor L3, a fourth inductor L4, a fifth inductor L5, a second capacitor C2 and a third capacitor C3.

[0067] The first end of the third inductor L3 is used to receive the second power signal Vcc2, and the second end of the third inductor L3 is connected to the second end of the second matching subunit 1214. In the case where the second matching subunit 1214 includes a second triode Q2, the second end of the third inductor L3 can be connected to the collector of the second triode Q2. The second power signal Vcc2 can be output by the second power supply, and the second inductor L2 is between the second power supply and the second amplifying subunit 1213. Based on the characteristics of the second inductor L2, the second inductor L2 can isolate the first radio frequency signal from entering the second power supply, thereby preventing the first radio frequency signal from interfering with the second power supply outputting the second power signal Vcc2.

[0068] The first end of the fourth inductor L4 is connected to the second end of the second matching subunit 1214 and the second end of the third inductor L3 respectively. The first end of the second capacitor C2 is connected to the second end of the fourth inductor L4 and the first end of the fifth inductor L5 respectively, the second end of the second capacitor C2 is connected to the common ground terminal, the second end of the fifth inductor L5 is connected to the first end of the third capacitor C3, the first end of the first switch circuit 122, and the load Z0 respectively, and the second end of the third capacitor C3 is connected to the common ground terminal. The impedance between the second amplifying subunit 1213 and the load is matched by the third inductor L3, the fourth inductor L4, the fifth inductor L5, the second capacitor C2 and the third capacitor C3.

[0069] In one embodiment, please refer to Figure 7 The power amplifier circuit 12 may further include a sixth inductor L6 and a seventh inductor L7, wherein a first end of the sixth inductor L6 is connected to the emitter of the first triode Q1, a second end of the sixth inductor L6 is connected to the common ground, a first end of the seventh inductor L7 is connected to the emitter of the second triode Q2, and a second end of the seventh inductor L7 is connected to the common ground.

[0070] In this embodiment, the sixth inductor L6 and the seventh inductor L7 are provided to prevent the radio frequency signals outputted by the emitters of the first transistor Q1 and the second transistor Q2 from entering the common ground terminal.

[0071] In one embodiment, Fig.11 As shown, the power amplifier circuit 12 further includes: a second amplifying unit 123 and a third amplifying unit 124 .

[0072] The second amplifying unit 123 is used to amplify and output the intermediate frequency RF signal input by the RF transceiver 11. The third amplifying unit 124 is used to amplify and output the high frequency RF signal input by the RF transceiver 11. The second amplifying unit 123 and the third amplifying unit 124 can be RF power amplifiers.

[0073] It can be understood that when the power amplifier circuit 12 includes the second amplifier unit 123 and the third amplifier unit 124, the power amplifier circuit 12 can support power amplification processing of intermediate frequency RF signals and high frequency RF signals, that is, the power amplifier circuit 12 can support power amplification processing of RF signals in different frequency bands, thereby enabling the RF front-end module to cooperate in implementing MIMO (Multiple-Input Multiple-Output) technology.

[0074] In the application, the RF front-end module may further include a second switch circuit 14, wherein a plurality of first ends of the second switch circuit 14 are respectively connected to the second amplifying unit 123, the third amplifying unit 124, and the duplexer 13, and the second end of the second switch circuit 14 is connected to the antenna. It should be noted that a duplexer may also be provided between the second amplifying unit 123 and the second switch circuit 14, and a duplexer may also be provided between the third amplifying unit 124 and the second switch circuit 14. The power amplifier circuit 12 may further include a second switch circuit and a fourth switch circuit, wherein the second switch circuit and the fourth switch circuit may respectively include a single-pole multi-throw switch. The first end of the second switch circuit may be connected to the second amplifying unit 123, and when the second end of the second switch circuit is turned on, the intermediate frequency RF signal after power amplification may be output through the second end of the second switch circuit. The first end of the fourth switch circuit may be connected to the third amplifying unit 124, and when the second end of the fourth switch circuit is turned on, the high frequency RF signal after power amplification may be output through the second end of the fourth switch circuit.

[0075] In one embodiment, see also Fig.11 The power amplifier circuit 12 is a multi-mode multi-band power amplifier 15 (Multimode Multiband Power Amplifier, MMPA), and the first amplifying unit 121, the first switching circuit 122, the second amplifying unit 123 and the third amplifying unit 124 are integrated in the multi-mode multi-band power amplifier 15.

[0076] It can be understood that when the first amplifying unit 121, the first switching circuit 122, the second amplifying unit 123 and the third amplifying unit 124 are integrated in the multi-mode multi-frequency power amplifier 15, the multi-mode multi-frequency power amplifier 15 is connected to the RF transceiver 11, and can support power amplification processing of RF signals in different frequency bands, and can be selectively connected to the duplexer 13 to power amplify the first RF signal input by the RF transceiver 11 and output it to the duplexer 13.

[0077] In the application, the multi-mode multi-frequency power amplifier 15 can be provided with a plurality of input ports of different frequency bands, and each input port of the multi-mode multi-frequency power amplifier 15 is connected to the output port of the RF transceiver 11 of the corresponding frequency band, so that the multi-mode multi-frequency power amplifier 15 can receive RF signals of different frequency bands, and transmit the RF signals of the corresponding frequency bands to the first amplifying unit 121, the second amplifying unit 123 and the third amplifying unit 124, and the first amplifying unit 121, the second amplifying unit 123 and the third amplifying unit 124 perform power amplification processing of the RF signals of the corresponding frequency bands, thereby supporting power amplification processing of RF signals of different frequency bands. By integrating the first amplifying unit 121, the first switching circuit 122, the second amplifying unit 123 and the third amplifying unit 124 in the multi-mode multi-frequency power amplifier 15, the integration of the RF front-end module can be improved, so that there is no need to separately set power amplifiers corresponding to different frequency bands, which is conducive to reducing the occupied area of ​​the RF front-end module on the mainboard of the communication device.

[0078] Based on the foregoing embodiments, it can be understood that the multi-mode multi-frequency power amplifier 15 may include a high-frequency signal transmission path, an intermediate-frequency signal transmission path, and a low-frequency signal transmission path.

[0079] Among them, the high-frequency signal transmission path is used to amplify the high-frequency RF signal input by the RF transceiver 11 and then output it; the intermediate-frequency signal transmission path is used to amplify the intermediate-frequency RF signal input by the RF transceiver 11 and then output it; the low-frequency signal transmission path is used to amplify the low-frequency RF signal input by the RF transceiver 11 and then output it to the duplexer 13.

[0080] The multi-mode multi-frequency power amplifier is provided with a high-frequency signal input port, an intermediate frequency signal input port and a low-frequency signal input port, which are respectively connected to the high-frequency signal output port, the intermediate frequency signal output port and the low-frequency signal output port of the radio frequency transceiver 11 to receive the radio frequency signals of each frequency band emitted by the radio frequency transceiver 11. MMPA can support the transmission of high-frequency signals of multiple different frequency bands to realize the transmission switching control between multiple high-frequency signals, and can also be used as a transmission device for multiple high-frequency signal receiving channels. MMPA can also support the selective transmission of multiple intermediate frequency signals and the selective transmission of multiple low-frequency signals. Multiple high-frequency signals may include high-frequency signals of different frequency bands and different duplex systems in 4G LTE signals and 5G NR signals. In one embodiment, the frequency bands of multiple high-frequency signals may include but are not limited to B38, B7, B40, B41, N7 and N41. Multiple intermediate frequency signals may include intermediate frequency signals of different frequency bands in 4G LTE signals and 5G NR signals, such as B3, N1, etc. The multiple low-frequency signals may include low-frequency signals of different frequency bands such as 4G LTE signals and 5G NR signals, such as B26, etc. The MMPA device may also be provided with multiple transceiver port groups for connecting (also connected through external circuits) antennas. Each transceiver port group includes a receiving port and a first transceiver port. The number of transceiver port groups is greater than or equal to the number of high-frequency signals, wherein each transceiver port group is used to transmit a high-frequency signal, and the high-frequency signals transmitted by each transceiver port group are different; and, multiple first intermediate frequency transmission ports and multiple low-frequency transmission ports for connecting (also connected through external circuits) antennas.

[0081] In one embodiment, the first RF signal is a N26 or B26 frequency band signal, and the duplexer 13 is an N5 or B5 duplexer.

[0082] Exemplarily, the first RF signal is a B26 frequency band signal, and the duplexer 13 is a B5 duplexer. Since the uplink frequency band range of B26 is 814-849MHz, and the downlink frequency band range is 859-894MHz, the uplink frequency band range of B5 is 824-849MHz, and the downlink frequency band range is 869-894MHz. From the above frequency band range, both the uplink and downlink frequency bands of B26 include B5. However, the suppression of the B5 duplexer at 859-860MHz is 10dB, as shown in FIG. Figure 4As shown. If the power amplifier circuit 12 and B5 duplexer in the traditional technology are used, when the transmission power of the antenna ANT0 port is 24dBm, the power of the power amplifier circuit 12 in the traditional technology in the range of 859 to 860MHz is -36dBm, plus the insertion loss of the transmission path of the first RF signal -3dBm, the final total suppression is -49dBm, which obviously does not meet the 3GPP requirements. Therefore, in traditional RF front-end modules, it is often necessary to use a B26 duplexer. The suppression of the B26 duplexer at 859 to 860MHz is more than 20dB, and the final total suppression is less than or equal to -59dBm, which meets the 3GPP requirements. The power amplifier circuit 12 of this embodiment improves the suppression effect of the power amplifier circuit 12 by adjusting the parameters of the circuit elements in the power amplifier circuit 12. On this basis, the duplexer 13 can adopt a B5 duplexer, and the total suppression of the first RF signal by the transmission path of the first RF signal can meet the 3GPP communication standard. Adjusting the parameters of the circuit elements in the power amplifier circuit 12 will not lead to an increase in the cost of the power amplifier circuit 12. The cost of the B5 duplexer is significantly lower than that of the B26 duplexer. Therefore, the cost of the RF front-end module of this embodiment is lower than the cost of the RF front-end module in the traditional technology.

[0083] In one embodiment, Fig.12 As shown, the RF front-end module also includes: a second switch circuit 14 , a first transmitting circuit 16 and a second transmitting circuit 17 .

[0084] A first end of the second switch circuit 14 is connected to a second end of the duplexer 13, and a second end of the second switch circuit 14 is connected to the antenna ANT0. The second switch circuit 14 is used to select a transmission path between the duplexer 13 and the antenna ANT0. The second switch circuit 14 may include a single-pole m-throw (SPmT) switch, a P port of the SPmT switch is connected to the antenna ANT0, and a T port is connected to the duplexer 13, wherein m is a positive integer greater than or equal to 2, for example, m=16.

[0085] It can be understood that by selecting the transmission path between the duplexer 13 and the antenna ANT0 through the second switch circuit 14, the low-frequency signal output by the RF transceiver 11 can be transmitted to the duplexer 13 after power amplification by the power amplifier circuit 12, and the duplexer 13 performs filtering on the amplified low-frequency signal and transmits it to the antenna ANT0 for transmission. Among them, the parameters of the circuit elements in the power amplifier circuit 12 can be adjusted to improve the suppression effect of the power amplifier circuit 12, so that the total suppression of the preset frequency band signal by the transmission path of the first RF signal meets the 3GPP communication standard.

[0086] An input end of the first transmitting circuit 16 is connected to the RF transceiver 11 , an output end of the first transmitting circuit 16 is connected to another first end of the second switch circuit 14 , and the first transmitting circuit 16 is used to support transmission processing of 2G low-frequency RF signals.

[0087] An input end of the second transmitting circuit 17 is connected to the RF transceiver 11 , an output end of the second transmitting circuit 17 is connected to another first end of the second switch circuit 14 , and the second transmitting circuit 17 is used to support transmission processing of 2G high frequency RF signals.

[0088] It can be understood that the 2G low-frequency RF signal processed by the first transmitting circuit 16 can be transmitted through the antenna ANT0 by enabling the first transmitting circuit 16 and the antenna ANT0 through the second switching circuit 14. When the second transmitting circuit 17 and the antenna ANT0 are enabled by the second switching circuit 14, the 2G high-frequency RF signal processed by the second transmitting circuit 17 can be transmitted through the antenna ANT0.

[0089] In one embodiment, Fig.12 As shown, the first transmitting circuit 16, the second transmitting circuit 17 and the second switch circuit 14 are integrated in the same radio frequency device. The radio frequency device may be a radio frequency front-end transmitting module 110 (Tx Front-End Module, TXM).

[0090] In this embodiment, by integrating the first transmitting circuit 16, the second transmitting circuit 17 and the second switching circuit 14 into the same RF device, the integration of the RF front-end module is further improved, which is beneficial to reducing the occupied space of the RF front-end module.

[0091] Based on the above embodiments, in one embodiment, Fig.13 As shown, the RF front-end module includes a power amplifier circuit 12, a duplexer 13 and a RF front-end transmitting module 110. The RF front-end transmitting module integrates a first transmitting circuit 16, a second transmitting circuit 17 and a second switch circuit 14.

[0092] The power amplifier circuit can be a multi-mode multi-frequency power amplifier 15, and the MMPA includes a high-frequency signal transmission path, an intermediate frequency signal transmission path, and a low-frequency signal transmission path. The low-frequency signal transmission path includes a first amplifying unit 121 and a first switching circuit 122. The first amplifying unit 121 can be a low-frequency signal power amplifier 1210. The first switching circuit 122 can be an SPnT switch, specifically, an SP5T switch 1220. The second end of the low-frequency signal power amplifier 1210 is connected to the S end of the SP5T switch 1220, and a T end of the SP5T switch 1220 is connected to the duplexer; the intermediate frequency signal transmission path includes a second amplifying unit 123, and the second amplifying unit 123 can be an intermediate frequency signal power amplifier 1230; the high-frequency signal transmission path includes a third amplifying unit 124, and the third amplifying unit 124 can be a high-frequency signal power amplifier 1240.

[0093] The second switch circuit 14 may be an SPmT switch, specifically, may be an SP16T switch 140 .

[0094] The duplexer 13 can be an N5 duplexer 130, and the two first ends of the N5 duplexer 130 are respectively connected to the T end of the SP5T switch 1220 and the RF transceiver, and the second end of the N5 duplexer 130 is connected to one end of the SP16T switch 140. When the SP5T switch 1220 selects the low-frequency signal power amplifier 1210 and the N5 duplexer 130, the first RF signal can be output to the low-frequency signal power amplifier 1210 via the RF transceiver 11, and then output to the N5 duplexer 130 after power amplification processing by the low-frequency signal power amplifier 1210, and then output to the ANT0 antenna ANT0 via the SP16T switch 140 after filtering processing by the N5 duplexer 130, and radiated out through the ANT0 antenna ANT0.

[0095] The first transmitting circuit 16 may include a first power amplifier 161 and a first filter 162, and the second transmitting circuit 17 may include a second power amplifier 171 and a second filter 172. The first end of the first power amplifier 161 is connected to the 2G low-frequency RF signal output port of the RF transceiver 11, the second end of the first power amplifier 161 is connected to the first end of the first filter 162, and the second end of the first filter 162 is connected to the other second end of the second switch circuit 14. The 2G low-frequency RF signal output by the RF transceiver is sequentially amplified by the first power amplifier 161 and filtered by the first filter 162, and then output, thereby realizing the transmission processing of the 2G low-frequency RF signal. The first end of the second power amplifier 171 is connected to the 2G high-frequency RF signal output port of the RF transceiver 11, the second end of the second power amplifier 171 is connected to the first end of the second filter 172, and the second end of the second filter 172 is connected to another second end of the second switch circuit 14. The 2G high-frequency RF signal output by the RF transceiver is sequentially amplified by the second power amplifier 171 and filtered by the second filter 172, and then output, thereby realizing the transmission processing of the 2G high-frequency RF signal.

[0096] The embodiment of the present application also provides a communication device, which includes a radio frequency transceiver, an antenna, and a radio frequency front-end module in any of the above embodiments. By setting the radio frequency front-end module on the communication device, the space occupied by the radio frequency system can be saved, which is conducive to realizing the miniaturization design of the product.

[0097] like Fig.14 As shown, further, the communication device is taken as a mobile phone 20 as an example for explanation, specifically, as Fig.14 As shown, the mobile phone 20 may include a memory 21 (which may optionally include one or more computer-readable storage media), a processing circuit 22, a peripheral device interface 23, a radio frequency system 24, and an input / output (I / O) subsystem 26. These components may communicate via one or more communication buses or signal lines 25. Those skilled in the art will appreciate that Fig.14 The illustrated mobile phone 20 does not constitute a limitation of the mobile phone, and may include more or less components than shown, or combine certain components, or arrange the components differently. Fig.14 The various components shown in the EMBODIMENTS 2000 are implemented in hardware, software, or a combination of hardware and software, including one or more signal processing and / or application specific integrated circuits.

[0098] The memory 21 optionally includes a high-speed random access memory, and optionally also includes a non-volatile memory, such as one or more disk storage devices, flash memory devices, or other non-volatile solid-state memory devices. Exemplarily, the software components stored in the memory 21 include an operating system 211, a communication module (or an instruction set) 212, a global positioning system (GPS) module (or an instruction set) 213, etc.

[0099] The processing circuit 22 and other control circuits (such as the control circuit in the radio frequency system 24) can be used to control the operation of the mobile phone 20. The processing circuit 22 may include one or more microprocessors, microcontrollers, digital signal processors, baseband processors, power management units, audio codec chips, application-specific integrated circuits, etc.

[0100] The processing circuit 22 may be configured to implement a control algorithm for controlling the use of an antenna in the mobile phone 20. The processing circuit 22 may also issue control commands for controlling switches in the radio frequency system 24, etc.

[0101] The I / O subsystem 26 couples input / output peripherals on the mobile phone 20, such as a keypad and other input control devices, to the peripheral device interface 23. The I / O subsystem 26 optionally includes a touch screen, buttons, tone generators, accelerometers (motion sensors), ambient light sensors and other sensors, light emitting diodes and other status indicators, data ports, etc. Exemplarily, a user can control the operation of the mobile phone 20 by supplying commands via the I / O subsystem 26, and can use the output resources of the I / O subsystem 26 to receive status information and other output from the mobile phone 20. For example, a user can press button 261 to turn the mobile phone on or off.

[0102] The radio frequency system 24 may include a radio frequency transceiver and a radio frequency front-end module in any of the above embodiments.

[0103] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.

[0104] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0105] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A radio frequency front-end module, characterized in that: include: A power amplifier circuit, connected to the radio frequency transceiver, for supporting power amplification processing of the first radio frequency signal; A duplexer, wherein two first ends of the duplexer are respectively connected to the RF transceiver and the power amplifier circuit, and are used to support filtering of a partial frequency band of the first RF signal and a second RF signal, wherein the frequency range of the second RF signal is within the frequency range of the first RF signal; The total suppression of the first radio frequency signal by the transmission path of the first radio frequency signal meets the 3GPP communication standard, and the power amplifier circuit and the duplexer are arranged on the transmission path.

2. The RF front-end module according to claim 1, characterized in that: The power amplifier circuit at least includes: a first amplifier unit and a first switch circuit, wherein: The input end of the first amplifying unit is used to connect to the RF transceiver, the output end of the first amplifying unit is connected to the first end of the first switch circuit, and the second end of the first switch circuit is connected to the duplexer.

3. The RF front-end module according to claim 2, characterized in that: The first amplifying unit comprises: a first amplifying subunit, a first matching subunit, a second amplifying subunit and a second matching subunit connected in cascade sequence; The first end of the first amplifying subunit is used to connect to the RF transceiver, the second end of the first amplifying subunit is connected to the first end of the first matching subunit, the second end of the first matching subunit is connected to the first end of the second amplifying subunit, the second end of the second amplifying subunit is connected to the first end of the second matching subunit, and the second end of the second matching subunit is respectively connected to the load and the first end of the first switching circuit; the first amplifying subunit is used to perform preliminary amplification processing on the low-frequency signal input by the RF transceiver, the first matching subunit is used to match the impedance between the first amplifying subunit and the second amplifying subunit, the first amplifying subunit is used to perform secondary amplification processing on the low-frequency signal after preliminary amplification processing, and the second matching subunit is used to match the impedance between the second amplifying subunit and the load, wherein the first end of the first amplifying subunit serves as the input end of the first amplifying unit, and the second end of the second matching subunit serves as the output end of the first amplifying unit.

4. The RF front-end module according to claim 3, characterized in that: The first matching subunit comprises: A first inductor, wherein a first end of the first inductor is used to receive a first power supply signal, and a second end of the first inductor is connected to a second end of the first amplifying subunit; a first capacitor, wherein a first end of the first capacitor is respectively connected to a second end of the first inductor and a second end of the first amplifying subunit; A second inductor, wherein a first end of the second inductor is used to receive a second power supply signal, and a second end of the second inductor is respectively connected to a second end of the first capacitor and a first end of the second amplifying subunit.

5. The RF front-end module according to claim 4, characterized in that: The parameter settings of the first inductor, the first capacitor and the second inductor meet preset conditions, so that the suppression of the first radio frequency signal by the first amplification unit is less than or equal to -37 dBm.

6. The RF front-end module according to claim 4, characterized in that: The inductance of the first inductor is 2.8nH-3.5nH, the capacitance of the first capacitor is 2pf-9pF, and the inductance of the second inductor is 1.7nH-2.1nH.

7. The RF front-end module according to claim 2, characterized in that: The power amplifier circuit also includes: A second amplifying unit, connected to the RF transceiver, for amplifying and outputting the intermediate frequency RF signal input by the RF transceiver; The third amplifying unit is connected to the RF transceiver and is used for amplifying the high-frequency RF signal input by the RF transceiver and then outputting it.

8. The RF front-end module according to claim 7, characterized in that: The power amplifier circuit is a multi-mode multi-frequency power amplifier, and the first amplifying unit, the first switching circuit, the second amplifying unit and the third amplifying unit are integrated in the multi-mode multi-frequency power amplifier.

9. The RF front-end module according to claim 1, characterized in that: The first radio frequency signal is an N26 or B26 frequency band signal, and the duplexer is an N5 or B5 duplexer.

10. The RF front-end module according to claim 1, characterized in that: The RF front-end module also includes: a second switch circuit, wherein a first end of the second switch circuit is connected to a second end of the duplexer, and a second end of the second switch circuit is connected to an antenna; a first transmitting circuit, wherein an input end of the first transmitting circuit is connected to the radio frequency transceiver, an output end of the first transmitting circuit is connected to another first end of the second switch circuit, and the first transmitting circuit is used to support transmission processing of 2G low-frequency radio frequency signals; A second transmitting circuit, wherein an input end of the second transmitting circuit is connected to the RF transceiver, an output end of the second transmitting circuit is connected to another first end of the second switch circuit, and the second transmitting circuit is used to support transmission processing of 2G high-frequency RF signals.

11. The RF front-end module according to claim 10, characterized in that: The first transmitting circuit, the second transmitting circuit and the second switching circuit are integrated in the same radio frequency device.

12. A communication device, characterized in that: It comprises a radio frequency transceiver, an antenna and a radio frequency front-end module as described in any one of claims 1 to 11, and the radio frequency front-end module is connected to the radio frequency transceiver and the antenna respectively.

Images