GaN-based multi-light-region LED chip, illumination lamp and preparation method

Abstract

The invention discloses a GaN-based multi-light-region LED chip, an illumination lamp and a preparation method. The GaN-based multi-light-region LED chip comprises a substrate and a GaN-based luminous body arranged on the substrate, at least one annular isolation groove is formed in the GaN-based luminous body, the annular isolation groove penetrates through the upper surface and the lower surface of the GaN-based luminous body, and when a plurality of annular isolation grooves are formed, the contours of orthographic projections of the annular isolation grooves on the substrate are gradually reduced, and the annular isolation grooves are sequentially formed in a sleeving manner from inside to outside; wherein the area adjacent to the groove wall of any annular isolation groove on the GaN-based luminous body is a sub-luminous area, and each sub-luminous area correspondingly emits a light beam at an angle when being lightened, so that light beam conversion can be carried out by lightening different sub-luminous areas, light beam conversion through one GaN-based multi-light-area LED chip is realized, the structure is simple, and the cost is low. Therefore, the cost of the lighting lamp is reduced, and the size and the weight of the lighting lamp are reduced.

Description

Technical Field

[0001] The present invention relates to the technical field of lighting fixtures, and in particular to a GaN-based multi-light zone LED chip, a lighting fixture and a preparation method thereof. Background Art

[0002] In mobile lighting, in order to meet more lighting needs, lighting fixtures are often capable of light beam transformation, that is, different light beams are switched to meet different lighting needs.

[0003] At present, when performing light beam transformation in a lighting fixture, one method is to enable the distance between the lens and the light source in the lighting fixture to be changed, and the light beam transformation is achieved by changing the distance between the lens and the light source in the lighting fixture when performing light beam transformation; another method is to set a plurality of LED light sources at different positions on the same focal plane in the light source, and when performing light beam transformation, the light beam transformation is achieved by driving the LED light sources at different positions on the same focal plane; in the above two methods, although light beam transformation can be performed, the structure is complicated, which makes the cost of the lighting fixture high, and the volume and weight of the lighting fixture large.

[0004] Therefore, the prior art still needs to be improved and developed. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, an object of the present invention is to provide a GaN-based multi-light zone LED chip, a lighting fixture and a preparation method, so as to solve the problem that the light beam transformation method used in the prior art for light beam transformation in lighting fixtures is complex in structure, resulting in high cost of the lighting fixture and large volume and weight of the lighting fixture.

[0006] The technical solution adopted by the present invention to solve the technical problem is: to provide a GaN-based multi-light zone LED chip, including: a substrate and a GaN-based luminous body arranged on the substrate;

[0007] At least one annular isolation groove is provided on the GaN-based light emitting body, and the annular isolation groove runs through the upper surface and the lower surface of the GaN-based light emitting body. When there are a plurality of annular isolation grooves, the contours of the positive projections of the plurality of annular isolation grooves on the substrate gradually decrease, and the annular isolation grooves are sequentially provided from the inside to the outside.

[0008] The area adjacent to the groove wall of any annular isolation groove on the GaN-based light-emitting body is a sub-light-emitting area, and each sub-light-emitting area emits a corresponding light beam at an angle when lit.

[0009] In a further configuration of the present invention, the GaN-based light emitting body comprises: a metal electrode and an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer and a transparent conductive layer arranged on the substrate from bottom to top;

[0010] Wherein, the upper surface of the transparent conductive layer is the upper surface of the GaN-based light emitting body, and the lower surface of the N-shaped gallium nitride layer is the lower surface of the GaN-based light emitting body;

[0011] The positive electrode in the metal electrode is connected to the transparent conductive layer, and the negative electrode in the metal electrode is connected to the N-type gallium nitride layer.

[0012] According to a further configuration of the present invention, when one of the annular isolation grooves is provided, the light power density of the sub-light emitting area adjacent to the inner groove wall of the annular isolation groove is the largest.

[0013] According to a further configuration of the present invention, when a plurality of the annular isolation grooves are provided, the light power density of the sub-light emitting region adjacent to the inner groove wall of the innermost annular isolation groove is the largest.

[0014] According to a further configuration of the present invention, when a plurality of the annular isolation grooves are provided, the light power density of the sub-light emitting area gradually decreases from the inside to the outside.

[0015] In a further configuration of the present invention, the light power density of the sub-light emitting region with the largest light power density in the sub-light emitting region is greater than 6A / mm 2 .

[0016] According to a further configuration of the present invention, the annular isolation groove is a circular annular isolation groove or a polygonal annular isolation groove.

[0017] The present invention further provides a lighting fixture, comprising: a shell having a containing chamber and the GaN-based multi-light zone LED chip as described above.

[0018] According to a further configuration of the present invention, the lighting fixture further comprises a positive lens, the positive lens is arranged on the housing and the light emitted by the GaN-based multi-light zone LED chip is emitted through the positive lens.

[0019] The present invention also provides a method for preparing the GaN-based multi-light zone LED chip as described above, the method comprising:

[0020] providing a substrate;

[0021] Growing a GaN-based light emitting body on the substrate;

[0022] An annular isolation groove is opened on the GaN-based light emitting body, and the annular isolation groove passes through the upper surface and the lower surface of the GaN-based light emitting body. When a plurality of the annular isolation grooves are opened, the contours of the positive projections of the plurality of the annular isolation grooves on the substrate gradually decrease, and the annular isolation grooves are opened in sequence from the inside to the outside.

[0023] The beneficial effects of the present invention are:

[0024] The present invention discloses a GaN-based multi-light zone LED chip, a lighting fixture and a preparation method. The GaN-based multi-light zone LED chip comprises: a substrate and a GaN-based light-emitting body arranged on the substrate; at least one annular isolation groove is provided on the GaN-based light-emitting body, and the annular isolation groove runs through the upper surface and the lower surface of the GaN-based light-emitting body. When a plurality of the annular isolation grooves are provided, the contours of the positive projections of the plurality of the annular isolation grooves on the substrate gradually decrease, and the annular isolation grooves are sequentially arranged from the inside to the outside; wherein, the area adjacent to the groove wall of any annular isolation groove on the GaN-based light-emitting body is a sub-light-emitting area, and each sub-light-emitting area emits a corresponding light beam at an angle when it is lit. In the technical solution of the present invention, at least one annular isolation groove is provided in the GaN-based light-emitting body, and the area adjacent to the groove wall of any annular isolation groove is a sub-light-emitting area, and each sub-light-emitting area corresponds to an emitting light beam at an angle when it is illuminated. Therefore, light beam transformation can be performed by lighting different sub-light-emitting areas, thereby realizing light beam transformation through a GaN-based multi-light-zone LED chip, and the structure is simple, so that the cost of the lighting fixture is reduced, and the volume and weight of the lighting fixture are reduced. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary personnel in this field, other drawings can be obtained based on the bodies shown in these drawings without paying creative work.

[0026] Figure 1 It is a top view of the GaN-based multi-light zone LED chip of the present invention.

[0027] Figure 2 The present invention is a flow chart of a method for preparing a GaN-based multi-light zone LED chip.

[0028] The symbols in the accompanying drawings are: 100, substrate; 200, GaN-based light-emitting body; 201, annular isolation groove; 202, sub-light-emitting area; 203, metal electrode. DETAILED DESCRIPTION

[0029] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, the specific embodiments of the present invention are now described in detail with reference to the accompanying drawings. In the following description, it should be understood that the directions or positional relationships indicated by "front", "back", "up", "down", "left", "right", "longitudinal", "horizontal", "vertical", "horizontal", "top", "bottom", "inside", "outside", "head", "tail", etc. are based on the directions or positional relationships shown in the accompanying drawings, are constructed and operated in a specific direction, and are only for the convenience of describing the present technical solution, rather than indicating that the device or element referred to must have a specific direction, and therefore cannot be understood as a limitation to the present invention.

[0030] like Figure 1 As shown, the present invention provides a GaN-based multi-light-zone LED chip, which may include a substrate 100 and a GaN-based light-emitting body 200 arranged on the substrate 100; at least one annular isolation groove 201 is opened on the GaN-based light-emitting body 200, and the annular isolation groove 201 passes through the upper surface and the lower surface of the GaN-based light-emitting body 200. When a plurality of annular isolation grooves 201 are opened, the contours of the positive projections of the plurality of annular isolation grooves 201 on the substrate 100 gradually decrease, and the annular isolation grooves 201 are sequentially opened from the inside to the outside; wherein, the area adjacent to the groove wall of any annular isolation groove 201 on the GaN-based light-emitting body 200 is a sub-light-emitting area 202, and each sub-light-emitting area 202 corresponds to an outgoing light beam at an angle, and each sub-light-emitting area 202 corresponds to an outgoing light beam at an angle means that when different sub-light-emitting areas 202 are lit, the angles of the outgoing light beams are different.

[0031] Specifically, when the annular isolation groove 201 is opened, a laser or ion etching method is used to etch an annular groove that penetrates the upper surface and the lower surface of the GaN-based light-emitting body 200 on the GaN-based light-emitting body 200, that is, the annular isolation groove 201 penetrates the upper surface and the lower surface of the GaN-based light-emitting body 200. The annular isolation groove 201 is used to form a plurality of sub-light-emitting regions 202 on the GaN-based light-emitting body 200. The number of sub-light-emitting regions 202 formed is related to the number of annular isolation grooves 201 opened. For example, when one annular isolation groove 201 is opened, two sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200. The two sub-light-emitting regions 202 are respectively two regions adjacent to the groove wall of the annular isolation groove 201. For another example, when two annular isolation grooves 201 are opened, three sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200. Sub-light-emitting regions 202, the three sub-light-emitting regions 202 are respectively two regions adjacent to the groove wall of the innermost annular isolation groove 201 and a region adjacent to the groove wall of the outermost annular isolation groove 201 (the innermost annular isolation groove 201 and the outermost annular isolation groove 201 have a common adjacent region, and the common adjacent region of the two annular isolation grooves 201 is a sub-light-emitting region 202, therefore, when two annular isolation grooves 201 are provided, three sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200). Among them, when the annular isolation groove 201 is provided, the purpose of penetrating the upper surface and the lower surface of the GaN-based light-emitting body 200 is to enable each sub-light-emitting region 202 to be independently lit.

[0032] Here, it should be noted that the groove wall of the annular isolation groove 201 includes an inner groove wall of the annular isolation groove 201 and an outer groove wall of the annular isolation groove 201 .

[0033] In this embodiment, at least one annular isolation groove 201 is provided in the GaN-based light-emitting body 200, and the area adjacent to the groove wall of any annular isolation groove 201 is a sub-light-emitting area 202, and each sub-light-emitting area 202 emits a corresponding light beam at an angle when it is illuminated. Therefore, the light beam can be transformed by lighting different sub-light-emitting areas 202, thereby realizing the light beam transformation through a GaN-based multi-light zone LED chip, and the structure is simple, which reduces the cost of the lighting fixture, and reduces the volume and weight of the lighting fixture.

[0034] In some embodiments, the GaN-based light emitting body 200 may include a metal electrode 203 and an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer and a transparent conductive layer arranged from bottom to top on the substrate 100; wherein the upper surface of the transparent conductive layer is the upper surface of the GaN-based light emitting body 200, and the lower surface of the N-type gallium nitride layer is the lower surface of the GaN-based light emitting body 200; the positive electrode in the metal electrode 203 is connected to the transparent conductive layer, and the negative electrode in the metal electrode 203 is connected to the N-type gallium nitride layer.

[0035] Specifically, the substrate 100 may be a sapphire substrate 100, on which an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer and a transparent conductive layer are sequentially grown using MOCVD (Metal-Organic Chemical Vapor Deposition) technology, wherein when the annular isolation groove 201 is opened, the annular isolation groove 201 penetrates the upper surface of the transparent conductive layer and the lower surface of the N-type gallium nitride layer.

[0036] Furthermore, when the metal electrode 203 is provided, the metal electrode 203 is produced by evaporating a metal film, and the metal electrode 203 includes a positive electrode and a negative electrode, wherein the metal electrode 203 can be produced on any area of ​​the GaN-based multi-light zone LED chip that does not affect the normal use of the GaN-based multi-light zone LED chip, for example, the metal electrode 203 can be produced on the bottom of the substrate 100 (the side opposite to the side where the N-type gallium nitride layer is provided), and of course, the metal electrode 203 can also be produced on the substrate 100 and located on the same side as the N-type gallium nitride layer. Those skilled in the art can determine the production position of the metal electrode 203 according to actual conditions, and no excessive restrictions are made here.

[0037] Furthermore, when the metal electrode 203 is manufactured, a set of positive electrodes and negative electrodes may be manufactured for each sub-light-emitting region 202, or all sub-light-emitting regions 202 may share a negative electrode, and a positive electrode may be manufactured for each sub-light-emitting region 202. Under the condition that each sub-light-emitting region 202 can be independently lit, those skilled in the art may determine the manufacturing method of the positive electrode and the negative electrode in the metal electrode 203 according to actual conditions, and no excessive restrictions are made here.

[0038] In this embodiment, the positive electrode is connected to the transparent conductive layer, and the negative electrode is connected to the N-type gallium nitride layer.

[0039] In some embodiments, when one annular isolation groove is provided, the light power density of the sub-light emitting region 202 adjacent to the inner groove wall of the annular isolation groove is the largest.

[0040] In this embodiment, since the sub-light-emitting area 202 with the highest light power density is the sub-light-emitting area 202 adjacent to the inner groove wall of the annular isolation groove, when it is necessary to illuminate a distant front target with a small field of view angle, the sub-light-emitting area 202 with the highest light power density can be lit to emit a light beam with a smaller field of view angle to illuminate the front target.

[0041] In some embodiments, when a plurality of annular isolation grooves are provided, the light power density of the sub-light emitting region 202 adjacent to the inner groove wall of the innermost annular isolation groove is the highest.

[0042] In this embodiment, since the sub-light-emitting area 202 with the highest light power density is the sub-light-emitting area 202 adjacent to the inner groove wall of the innermost annular isolation groove, when it is necessary to illuminate a distant front target with a small field of view angle, the sub-light-emitting area 202 with the highest light power density can be lit, and a light beam with a smaller field of view angle can be emitted to illuminate the front target.

[0043] Furthermore, when a plurality of annular isolation grooves are provided, the light power density of the sub-light emitting area 202 gradually decreases from the inside to the outside.

[0044] In this embodiment, since each sub-light-emitting area 202 emits a light beam at an angle when illuminated, when the light power density of the sub-light-emitting area 202 gradually decreases from the inside to the outside, lighting different sub-light-emitting areas 202 will form light beams with different brightness and different angles.

[0045] Furthermore, the light power density of the sub-light emitting region 202 with the largest light power density among the sub-light emitting regions 202 is greater than 6A / mm 2 .

[0046] Specifically, the light power density of the sub-light emitting region 202 with the largest light power density among the sub-light emitting regions 202 may be 6.5 A / mm 2 , 7A / mm 2 , 9A / mm 2 , 12A / mm 2 When determining the sub-light emitting area 202 with the largest light power density, those skilled in the art may do so based on actual conditions, and no further limitations are given herein.

[0047] In some embodiments, when the annular isolation groove 201 is opened, the annular isolation groove 201 in a circular shape or the annular isolation groove 201 in a polygonal shape may be opened.

[0048] In this embodiment, if Figure 1 As shown, the annular isolation groove 201 may be a circular annular isolation groove 201, wherein when a plurality of the annular isolation grooves 201 are provided, the inner diameter of the circular annular isolation groove gradually increases from the inside to the outside.

[0049] Of course, the annular isolation groove 201 may also be a square annular isolation groove 201 , an equilateral triangle annular isolation groove 201 , or a diamond annular isolation groove 201 .

[0050] It can be seen that when the annular isolation groove 201 is formed on the GaN-based light emitting body 200, the annular isolation groove 201 can be formed according to actual needs, so that the applicability of the GaN-based multi-light zone LED chip is expanded.

[0051] In some embodiments, the present invention further provides a lighting fixture, which may include a housing having a containing chamber and the above-mentioned GaN-based multi-light-zone LED chip.

[0052] The GaN-based multi-light-zone LED chip may include a substrate 100 and a GaN-based light-emitting body 200 arranged on the substrate 100; at least one annular isolation groove 201 is opened on the GaN-based light-emitting body 200, and the annular isolation groove 201 passes through the upper surface and the lower surface of the GaN-based light-emitting body 200. When a plurality of annular isolation grooves 201 are opened, the contours of the positive projections of the plurality of annular isolation grooves 201 on the substrate 100 gradually decrease, and they are sequentially arranged from the inside to the outside; wherein, the area adjacent to the groove wall of any annular isolation groove 201 on the GaN-based light-emitting body 200 is a sub-light-emitting area 202, and each sub-light-emitting area 202 corresponds to an outgoing light beam at an angle, and each sub-light-emitting area 202 corresponds to an outgoing light beam at an angle means that when different sub-light-emitting areas 202 are lit, the angles of the outgoing light beams are different.

[0053] Specifically, when the annular isolation groove 201 is opened, a laser or ion etching method is used to etch an annular groove that penetrates the upper surface and the lower surface of the GaN-based light-emitting body 200 on the GaN-based light-emitting body 200, that is, the annular isolation groove 201 penetrates the upper surface and the lower surface of the GaN-based light-emitting body 200. The annular isolation groove 201 is used to form a plurality of sub-light-emitting regions 202 on the GaN-based light-emitting body 200. The number of sub-light-emitting regions 202 formed is related to the number of annular isolation grooves 201 opened. For example, when one annular isolation groove 201 is opened, two sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200. The two sub-light-emitting regions 202 are respectively two regions adjacent to the groove wall of the annular isolation groove 201. For another example, when two annular isolation grooves 201 are opened, three sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200. Sub-light-emitting regions 202, the three sub-light-emitting regions 202 are respectively two regions adjacent to the groove wall of the innermost annular isolation groove 201 and a region adjacent to the groove wall of the outermost annular isolation groove 201 (the innermost annular isolation groove 201 and the outermost annular isolation groove 201 have a common adjacent region, and the common adjacent region of the two annular isolation grooves 201 is a sub-light-emitting region 202, therefore, when two annular isolation grooves 201 are provided, three sub-light-emitting regions 202 are formed on the GaN-based light-emitting body 200). Among them, when the annular isolation groove 201 is provided, the purpose of penetrating the upper surface and the lower surface of the GaN-based light-emitting body 200 is to enable each sub-light-emitting region 202 to be independently lit.

[0054] Here, it should be noted that the groove wall of the annular isolation groove 201 includes an inner groove wall of the annular isolation groove 201 and an outer groove wall of the annular isolation groove 201 .

[0055] In this embodiment, at least one annular isolation groove 201 is provided in the GaN-based light-emitting body 200, and the area adjacent to the groove wall of any annular isolation groove 201 is a sub-light-emitting area 202, and each sub-light-emitting area 202 emits a corresponding light beam at an angle when it is illuminated. Therefore, the light beam can be transformed by lighting different sub-light-emitting areas 202, thereby realizing the light beam transformation through a GaN-based multi-light zone LED chip, and the structure is simple, which reduces the cost of the lighting fixture, and reduces the volume and weight of the lighting fixture.

[0056] Furthermore, the lighting fixture also includes a positive lens, which is arranged on the shell and through which the light emitted by the GaN-based multi-light-zone LED chip is emitted.

[0057] In this embodiment, when one annular isolation groove 201 is provided, the light power density of the sub-light emitting region 202 adjacent to the inner groove wall of the annular isolation groove is the highest. When multiple annular isolation grooves are provided, the light power density of the sub-light emitting region 202 adjacent to the inner groove wall of the innermost annular isolation groove is the highest. Among the sub-light emitting regions 202, the light power density of the sub-light emitting region 202 with the highest light power density is greater than 6A / mm 2 , the optical power density can be 6.5A / mm 2 , 7A / mm 2 , 9A / mm 2 , 12A / mm 2 When determining the sub-light emitting area 202 with the largest light power density, those skilled in the art may do so based on actual conditions, and no further limitations are given herein.

[0058] Since one or more annular isolation grooves 201 are provided, the sub-light-emitting area 202 with the largest light power density is located at the innermost side of all sub-light-emitting areas 202. Therefore, when the sub-light-emitting area 202 with the largest light power density is lit, the light-emitting angle of the emitted light beam is the smallest and the brightness is the highest. When the lighting fixture is used, when it is necessary to illuminate a distant target with a small field of view, the sub-light-emitting area 202 with the largest light power density is lit, and a light beam with the highest brightness and the smallest light-emitting angle will be emitted. After being emitted through the positive lens, the light beam forms a beam of strong light to illuminate the distant target with a small field of view. When illuminating some targets at a short distance and with a large field of view, different sub-light-emitting areas 202 can be lit according to actual conditions to meet the illumination requirements. This enables the lighting fixture using the GaN-based multi-light zone LED chip to illuminate both far and bright targets, and near and wide range targets, achieving the best lighting effect and beam transformation.

[0059] In some embodiments, Figure 2As shown, the present invention also provides a method for preparing the GaN-based multi-light zone LED chip as described above, the preparation method comprising:

[0060] S100, providing a substrate;

[0061] S200, generating a GaN-based light emitting body on a substrate;

[0062] S300, opening an annular isolation groove on the GaN-based light-emitting body, wherein the annular isolation groove passes through the upper surface and the lower surface of the GaN-based light-emitting body, wherein when there are a plurality of annular isolation grooves, the contours of the positive projections of the plurality of annular isolation grooves on the substrate gradually decrease, and the plurality of annular isolation grooves are sequentially arranged from the inside to the outside.

[0063] In this embodiment, the substrate may be a sapphire substrate. The GaN-based light emitter may include a metal electrode and an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer and a transparent conductive layer arranged on the substrate from bottom to top. The MOCVD technology may be used to sequentially grow the N-type gallium nitride layer, the multi-layer quantum well layer, the P-type gallium nitride layer and the transparent conductive layer on the sapphire substrate, wherein when the annular isolation groove is opened, the annular isolation groove passes through the upper surface of the transparent conductive layer and the lower surface of the N-type gallium nitride layer; the metal electrode is produced by evaporating a metal film.

[0064] When the annular isolation groove is opened, a laser or ion etching method is used to etch an annular groove that penetrates the upper surface and the lower surface of the GaN-based light-emitting body, that is, an annular isolation groove that penetrates the upper surface and the lower surface of the GaN-based light-emitting body. The GaN-based light-emitting body is formed into a plurality of sub-light-emitting regions through the annular isolation groove, and the specific number of sub-light-emitting regions formed is related to the number of annular isolation grooves opened.

[0065] In this embodiment, at least one annular isolation groove is provided in the GaN-based light-emitting body, and the area adjacent to the groove wall of any annular isolation groove is a sub-light-emitting area, and each sub-light-emitting area emits a corresponding light beam at an angle when it is illuminated. Therefore, the light beam can be transformed by lighting different sub-light-emitting areas, thereby realizing the light beam transformation through a GaN-based multi-light-zone LED chip, and the structure is simple, which reduces the cost of the lighting fixture, and reduces the volume and weight of the lighting fixture.

[0066] Here, it should be pointed out that the description of the above lighting fixture and the manufacturing method embodiment is similar to the description of the above GaN-based multi-light zone LED chip embodiment, and has similar beneficial effects as the above GaN-based multi-light zone LED chip. For technical details not disclosed in the lighting fixture and the manufacturing method embodiment, please refer to the description of the GaN-based multi-light zone LED chip embodiment of the present invention for understanding.

[0067] In summary, the present invention provides a GaN-based multi-light zone LED chip, a lighting fixture and a preparation method, which have the following beneficial effects:

[0068] At least one annular isolation groove 201 is provided in the GaN-based light-emitting body 200, and the area adjacent to the groove wall of any annular isolation groove 201 is a sub-light-emitting area 202, and each sub-light-emitting area 202 emits a corresponding light beam at an angle when it is illuminated. Therefore, light beam transformation can be performed by lighting different sub-light-emitting areas 202, thereby realizing light beam transformation through a GaN-based multi-light zone LED chip, and the structure is simple, which reduces the cost of the lighting fixture, and reduces the volume and weight of the lighting fixture.

[0069] It can be understood that the above embodiments only express the preferred implementation modes of the present invention, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the patent scope of the present invention. It should be pointed out that, for ordinary technicians in this field, the above technical features can be freely combined without departing from the concept of the present invention, and several deformations and improvements can be made, which all belong to the protection scope of the present invention. Therefore, all equivalent changes and modifications made to the scope of the claims of the present invention should belong to the coverage of the claims of the present invention.

Claims

1. A GaN-based multi-light zone LED chip, characterized in that: include: A substrate and a GaN-based light emitting body arranged on the substrate; At least one annular isolation groove is provided on the GaN-based light emitting body, and the annular isolation groove runs through the upper surface and the lower surface of the GaN-based light emitting body. When there are a plurality of annular isolation grooves, the contours of the positive projections of the plurality of annular isolation grooves on the substrate gradually decrease, and the annular isolation grooves are sequentially provided from the inside to the outside. Wherein, the area adjacent to the groove wall of any annular isolation groove on the GaN-based light-emitting body is a sub-light-emitting area.

2. The GaN-based multi-light zone LED chip according to claim 1, characterized in that: The GaN-based light emitting body comprises: a metal electrode and an N-type gallium nitride layer, a multi-layer quantum well layer, a P-type gallium nitride layer and a transparent conductive layer arranged on the substrate from bottom to top; Wherein, the upper surface of the transparent conductive layer is the upper surface of the GaN-based light emitting body, and the lower surface of the N-shaped gallium nitride layer is the lower surface of the GaN-based light emitting body; The positive electrode in the metal electrode is connected to the transparent conductive layer, and the negative electrode in the metal electrode is connected to the N-type gallium nitride layer.

3. The GaN-based multi-light zone LED chip according to claim 1, characterized in that: When one annular isolation groove is provided, the light power density of the sub-light emitting area adjacent to the inner groove wall of the annular isolation groove is the largest.

4. The GaN-based multi-light zone LED chip according to claim 1, characterized in that: When a plurality of the annular isolation grooves are provided, the light power density of the sub-light emitting region adjacent to the inner groove wall of the innermost annular isolation groove is the largest.

5. The GaN-based multi-light zone LED chip according to claim 4, characterized in that: When a plurality of the annular isolation grooves are provided, the light power density of the sub-light emitting area decreases gradually from the inside to the outside.

6. The GaN-based multi-light zone LED chip according to claim 3 or 5, characterized in that: The light power density of the sub-light emitting area with the largest light power density among the sub-light emitting areas is greater than 6A / mm 2 .

7. The GaN-based multi-light zone LED chip according to claim 1, characterized in that: The annular isolation groove is a circular annular isolation groove or a polygonal annular isolation groove.

8. A lighting fixture, characterized in that: include: A shell having a accommodating chamber and a GaN-based multi-light zone LED chip as claimed in any one of claims 1 to 7.

9. The lighting fixture according to claim 8, characterized in that: The lighting fixture further comprises a positive lens, which is arranged on the housing and through which the light emitted by the GaN-based multi-light zone LED chip is emitted.

10. A method for preparing a GaN-based multi-light zone LED chip as claimed in any one of claims 1 to 7, characterized in that: The preparation method comprises: providing a substrate; Growing a GaN-based light emitting body on the substrate; An annular isolation groove is opened on the GaN-based light emitting body, and the annular isolation groove passes through the upper surface and the lower surface of the GaN-based light emitting body. When a plurality of the annular isolation grooves are opened, the contours of the positive projections of the plurality of the annular isolation grooves on the substrate gradually decrease, and the annular isolation grooves are opened in sequence from the inside to the outside.

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