Chip mounting process and chip mounting system

Abstract

The invention belongs to the technical field of heat treatment, and particularly relates to a chip mounting process and a chip mounting system.The chip mounting process comprises the steps that a plurality of temperature areas are sequentially arranged in the advancing direction, and the temperature range of each temperature area is set; protective gas is introduced into each temperature area, and the flow range of the protective gas introduced into each temperature area is set; according to the method, the flow range for introducing the protective gas is independently arranged in each temperature region, so that the problem of high flow consumption of the protective gas caused by the same flow of the protective gas introduced into other temperature regions except the central region in the traditional eutectic chip mounting process is solved, and the flow of the protective gas can be greatly reduced on the premise of not influencing the chip mounting quality effect. Consumption of protective gas is reduced, and cost reduction and efficiency improvement are achieved.

Description

Technical Field

[0001] The present invention belongs to the field of heat treatment technology, and specifically relates to heat treatment processing chips, and more particularly to a chip loading process and a chip loading system. Background Art

[0002] The eutectic mounting process refers to melting the back of the chip and solidifying it on the frame through temperature under a given hydrogen and nitrogen protective gas flow rate, so that the frame and the chip form a good ohmic contact.

[0003] Hydrogen and nitrogen protective gas can effectively prevent oxidation anomalies during the eutectic wafer loading process. In the eutectic wafer loading process, the temperature in the center area is the highest, and the temperature decreases as you move toward the sides. Currently, except for the center area where the hydrogen and nitrogen protective gas flow rate is set to 1-4L / min, the hydrogen and nitrogen protective gas flow rates in other temperature areas are uniformly set to 3-7L / min, resulting in a huge consumption of hydrogen and nitrogen protective gas.

[0004] Therefore, it is urgent to develop a new loading process and loading system to solve the problem of how to reduce the consumption of hydrogen and nitrogen protective gas without affecting the loading quality.

[0005] It should be noted that the above information disclosed in this background technology section is only used to understand the background technology of the present application concept, and therefore, the above description is not considered to constitute information of the prior art. Summary of the invention

[0006] The embodiments of the present disclosure at least provide a wafer loading process and a wafer loading system.

[0007] In a first aspect, an embodiment of the present disclosure provides a wafer loading process, which includes: arranging a plurality of temperature zones in sequence in the direction of travel, and setting a temperature range for each temperature zone; introducing a protective gas into each temperature zone, and setting a flow range of the protective gas into each temperature zone.

[0008] In an optional implementation, along the traveling direction, the temperature corresponding to each temperature zone increases and then decreases.

[0009] In an optional embodiment, the temperature corresponding to at least one temperature zone is set lower than the temperature corresponding to an adjacent temperature zone, and the flow rate of the protective gas entering the low temperature zone is lower than the flow rate of the protective gas entering the high temperature zone.

[0010] In an optional embodiment, eight temperature zones are arranged in sequence, and the temperature ranges of each temperature zone are: 240-340°C, 300-400°C, 360-460°C, 380-460°C, 360-460°C, 300-400°C, 240-340°C, and 180-280°C.

[0011] In an optional embodiment, the flow range of the protective gas introduced into each temperature zone is: 1-3L / min, 1-3L / min, 3-7L / min, 1-4L / min, 3-7L / min, 3-7L / min, 1-3L / min, 1-3L / min.

[0012] In an optional embodiment, six temperature zones are arranged in sequence, and the temperature ranges of each temperature zone are: 300-400°C, 360-460°C, 380-480°C, 360-460°C, 300-400°C, and 240-340°C.

[0013] In an optional embodiment, the flow range of the protective gas introduced into each temperature zone is: 3-7L / min, 3-7L / min, 3-7L / min, 1-4L / min, 3-7L / min, 1-3L / min.

[0014] In the second aspect, an embodiment of the present disclosure provides a loading system, which includes: a conveying track, a temperature control device and a flow control device; wherein a plurality of temperature zones are arranged in sequence in the traveling direction of the conveying track, and the temperature range of each temperature zone is set by the temperature control device; protective gas is introduced into each temperature zone respectively by the flow control device, and the flow range of the protective gas introduced into each temperature zone is set.

[0015] In an optional embodiment, eight temperature zones are arranged in sequence, and the temperature range of each temperature zone is: 240-340℃, 300-400℃, 360-460℃, 380-460℃, 360-460℃, 300-400℃, 240-340℃, 180-280℃; the flow range of protective gas entering each temperature zone is: 1-3L / min, 1-3L / min, 3-7L / min, 1-4L / min, 3-7L / min, 3-7L / min, 1-3L / min, 1-3L / min.

[0016] In an optional embodiment, six temperature zones are arranged in sequence, and the temperature range of each temperature zone is: 300-400℃, 360-460℃, 380-480℃, 360-460℃, 300-400℃, 240-340℃; the flow range of protective gas entering each temperature zone is: 3-7L / min, 3-7L / min, 3-7L / min, 1-4L / min, 3-7L / min, 1-3L / min.

[0017] The beneficial effect of the present invention is that, by independently setting the flow range of the protective gas introduced into each temperature zone, the present invention overcomes the problem of large consumption of the protective gas flow rate caused by the same protective gas flow rate introduced into other temperature zones except the central zone in the traditional eutectic loading process, and can reduce the consumption of the protective gas without affecting the loading quality effect, thereby achieving cost reduction and efficiency improvement.

[0018] Other features and advantages of the present invention will be described in the following description, and partly become apparent from the description, or understood by practicing the present invention. The purpose and other advantages of the present invention are realized and obtained by the structures particularly pointed out in the description, claims and drawings.

[0019] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, preferred embodiments are given below and described in detail with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the specific implementation methods of the present invention or the technical solutions in the prior art, the drawings required for use in the specific implementation methods or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are some implementation methods of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0021] Figure 1 A flow chart of a wafer loading process provided by an embodiment of the present disclosure; Figure 2 A flow chart of setting the temperature range and flow range in the wafer loading process provided in the embodiment of the present disclosure; Figure 3 A parameter setting diagram of the temperature range and flow rate range in the wafer loading process provided by the embodiment of the present disclosure; Figure 4 Another parameter setting diagram of the temperature range and flow rate range in the wafer loading process provided by the embodiment of the present disclosure; Figure 5 This is a schematic diagram of the appearance of a pushed crystal using a traditional eutectic wafer mounting process; Figure 6 A schematic diagram of the appearance of a wafer pusher using the wafer loading process provided by an embodiment of the present disclosure; Figure 7 A comparison chart of the pushing fastness of the conventional eutectic wafer mounting process and the wafer mounting process provided by the embodiment of the present disclosure; Figure 8 A comparison diagram of the tensile force of a weld using a conventional eutectic die bonding process and a die bonding process provided by an embodiment of the present disclosure; Fig. 9A comparison diagram of the two-weld tension between the conventional eutectic wafer mounting process and the wafer mounting process provided by the embodiment of the present disclosure; Fig.10 The figure is a comparison chart of the ball pushing values ​​using the traditional eutectic wafer mounting process and the wafer mounting process provided by the embodiment of the present disclosure.

[0022] In the figure: 1. Crystal pushing fastness broken line one; 2. Crystal pushing fastness broken line two; 3. Standard crystal pushing fastness broken line; 4. One weld tension broken line one; 5. One weld tension broken line two; 6. Standard one weld tension broken line; 7. Two weld tension broken line one; 8. Two weld tension broken line two; 9. Standard two weld tension broken line; 10. Push ball value broken line one; 11. Push ball value broken line two; 12. Standard push ball value broken line. DETAILED DESCRIPTION

[0023] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the accompanying drawings. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0024] The terms used herein are only used to describe specific exemplary configurations and are not intended to be limited. As used herein, the singular articles "one", "an" and "the" may also be intended to include plural forms, unless it is clearly indicated above that this is not the case. The terms "comprise", "include" and "have" are inclusive, and therefore specify the presence of features, steps, operations, elements and / or components, but do not exclude the presence or addition of one or more other features, steps, operations, elements, components and / or combinations thereof. The method steps, processes and operations described herein should not be interpreted as necessarily requiring them to be performed in the specific order discussed or shown, unless specifically identified as an execution order. Additional or alternative steps may be adopted.

[0025] As used herein, the phrases "in one embodiment," "according to one embodiment," "in some embodiments," and the like generally refer to the fact that the particular feature, structure, or characteristic following the phrase may be included in at least one embodiment of the present disclosure. Therefore, a particular feature, structure, or characteristic may be included in more than one embodiment of the present disclosure, so that these phrases do not necessarily refer to the same embodiment. As used herein, the terms "example," "exemplary," and the like are used to "serve as an example, instance, or illustration." Any implementation, aspect, or design described herein as "example" or "exemplary" is not necessarily to be construed as preferred or superior to other implementations, aspects, or designs. On the contrary, the use of the terms "example," "exemplary," and the like is intended to present concepts in a concrete manner.

[0026] The crystal pushing strength refers to the connection strength tested under the crystal pushing test. The first weld tension refers to the tension value of testing one weld point. The second weld tension refers to the tension value of testing two weld points. The ball pushing value refers to the thrust tested under the ball pushing test.

[0027] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0028] Some embodiments of the present invention are described in detail below in conjunction with the accompanying drawings. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0029] like Figures 1 to 10 At least one embodiment provides a wafer loading process, which includes: arranging a plurality of temperature zones in sequence in the direction of travel, and setting a temperature range for each temperature zone; introducing a protective gas into each temperature zone, and setting a flow range of the protective gas into each temperature zone.

[0030] In at least one embodiment, by separately setting the flow range of the protective gas in each temperature zone, the problem of large consumption of the protective gas flow rate caused by the same protective gas flow rate in other temperature zones except the central zone in the traditional eutectic bonding process is overcome. This enables the protection gas consumption to be reduced without affecting the quality of the bonding, thereby achieving cost reduction and efficiency improvement.

[0031] In at least one embodiment, along the moving direction, the temperature corresponding to each temperature zone increases and then decreases.

[0032] Specifically, the temperature gradually increases and then decreases, which can meet the requirements of the eutectic chip mounting process, and can melt the back of the chip and solidify it on the frame, thereby achieving good ohmic contact between the frame and the chip.

[0033] In at least one embodiment, the temperature corresponding to at least one temperature zone is set lower than the temperature corresponding to the adjacent temperature zone, and the flow rate of the protective gas introduced into the low temperature zone is lower than the flow rate of the protective gas introduced into the high temperature zone.

[0034] Specifically, the conventional eutectic wafer bonding process uses a uniform flow rate in all temperature zones except the central zone, while this embodiment reduces the consumption of protective gas without affecting the quality of wafer bonding by controlling the variable flow rate in the lowest temperature zone.

[0035] In at least one embodiment, see Figure 3There are eight temperature zones arranged in sequence, and the temperature ranges of each temperature zone are: 240-340℃, 300-400℃, 360-460℃, 380-460℃, 360-460℃, 300-400℃, 240-340℃, and 180-280℃.

[0036] In at least one embodiment, see Figure 3 The flow ranges of protective gas entering each temperature zone are: 1-3L / min, 1-3L / min, 3-7L / min, 1-4L / min, 3-7L / min, 3-7L / min, 1-3L / min, 1-3L / min.

[0037] Specifically, when the temperature range is 240-340℃, the corresponding flow range is 1-3L / min; when the temperature range is 300-400℃, the corresponding flow range is 1-3L / min; when the temperature range is 360-460℃, the corresponding flow range is 3-7L / min; when the temperature range is 380-460℃, the corresponding flow range is 1-4L / min; when the temperature range is 360-460℃, the corresponding flow range is 3-7L / min; when the temperature range is 300-400℃, the corresponding flow range is 3-7L / min; when the temperature range is 240-340℃, the corresponding flow range is 1-3L / min; when the temperature range is 180-280℃, the corresponding flow range is 1-3L / min.

[0038] Specifically, in the traditional eutectic bonding process, the temperature range is 240-340°C and the corresponding flow range is 3-7L / min, and the temperature range is 180-280°C and the corresponding flow range is 3-7L / min. After adjustment in this embodiment, the flow consumption of the protective gas can be reduced without affecting the bonding quality.

[0039] Specifically, when the temperature range is 240-340°C, the flow rate of the protective gas can be input at 1 L / min, 2 L / min, or 3 L / min.

[0040] Specifically, when the temperature range is 300-400° C., the flow rate of the protective gas can be input at 1 L / min, 2 L / min, or 3 L / min.

[0041] Specifically, when the temperature range is 240-340°C, the flow rate of the protective gas can be input at 1 L / min, 2 L / min, or 3 L / min.

[0042] Specifically, when the temperature range is 180-280°C, the flow rate of the protective gas can be input at 1 L / min, 2 L / min, or 3 L / min.

[0043] In at least one embodiment, see Figure 4 , six temperature zones are arranged in sequence, and the temperature ranges of each temperature zone are: 300-400℃, 360-460℃, 380-480℃, 360-460℃, 300-400℃, and 240-340℃.

[0044] In at least one embodiment, see Figure 4 The flow ranges of protective gas entering each temperature zone are: 3-7L / min, 3-7L / min, 3-7L / min, 1-4L / min, 3-7L / min, and 1-3L / min.

[0045] Specifically, when the temperature range is 300-400℃, the corresponding flow range is 3-7L / min; when the temperature range is 360-460℃, the corresponding flow range is 3-7L / min; when the temperature range is 380-480℃, the corresponding flow range is 3-7L / min; when the temperature range is 360-460℃, the corresponding flow range is 1-4L / min; when the temperature range is 300-400℃, the corresponding flow range is 3-7L / min; when the temperature range is 240-340℃, the corresponding flow range is 1-3L / min.

[0046] Specifically, the temperature range in the traditional eutectic wafer loading process is 240-340° C., and the corresponding flow range is 3-7 L / min. After adjustment in this embodiment, the flow consumption of the protective gas can be reduced without affecting the wafer loading quality.

[0047] Specifically, when the temperature range is 240-340°C, the flow rate of the protective gas can be input at 1 L / min, 2 L / min, or 3 L / min.

[0048] See also Figures 5 and 6 After reducing the flow rate of the protective gas in the low temperature zone, there is no obvious difference between the appearance of the pushed crystal in the traditional eutectic wafer loading process and the appearance of the pushed crystal in the wafer loading process of this embodiment.

[0049] See also Figure 7 There is no obvious difference between the crystal pushing fastness broken line 1 of the traditional eutectic mounting process and the crystal pushing fastness broken line 2 of the mounting process of this embodiment, and both are much higher than the standard crystal pushing fastness broken line 3.

[0050] See also Figure 8 There is no obvious difference between the welding tension broken line 1 (4) of the traditional eutectic wafer bonding process and the welding tension broken line 2 (5) of the wafer bonding process of this embodiment, and both are much higher than the standard welding tension broken line 6.

[0051] See also Fig. 9There is no obvious difference between the two-weld tension fold line 7 of the traditional eutectic wafer mounting process and the two-weld tension fold line 8 of the wafer mounting process of this embodiment, and both are much higher than the standard two-weld tension fold line 9.

[0052] See also Fig.10 There is no obvious difference between the push ball value line 10 of the traditional eutectic wafer loading process and the push ball value line 2 11 of the wafer loading process of this embodiment, and both are much higher than the standard push ball value line 12.

[0053] Based on the same technical concept, at least one embodiment also provides a loading system, which includes: a conveying track, a temperature control device and a flow control device; wherein a plurality of temperature zones are arranged in sequence in the traveling direction of the conveying track, and the temperature range of each temperature zone is set by the temperature control device; protective gas is introduced into each temperature zone respectively through the flow control device, and the flow range of the protective gas introduced into each temperature zone is set.

[0054] In at least one embodiment, eight temperature zones are arranged in sequence, and the temperature range of each temperature zone is: 240-340℃, 300-400℃, 360-460℃, 380-460℃, 360-460℃, 300-400℃, 240-340℃, 180-280℃; the flow range of protective gas introduced into each temperature zone is: 1-3L / min, 1-3L / min, 3-7L / min, 1-4L / min, 3-7L / min, 3-7L / min, 1-3L / min, 1-3L / min.

[0055] In at least one embodiment, six temperature zones are arranged in sequence, and the temperature range of each temperature zone is: 300-400℃, 360-460℃, 380-480℃, 360-460℃, 300-400℃, 240-340℃; the flow range of the protective gas introduced into each temperature zone is: 3-7L / min, 3-7L / min, 3-7L / min, 1-4L / min, 3-7L / min, 1-3L / min.

[0056] To sum up, the present invention overcomes the problem of large consumption of protective gas flow rate caused by the same protective gas flow rate in other temperature zones except the central zone in the traditional eutectic loading process by separately setting the flow rate range of the protective gas in each temperature zone. It can reduce the consumption of protective gas without affecting the loading quality and achieve cost reduction and efficiency improvement.

[0057] The disclosure and other solutions, examples, embodiments, modules and functional operations described in this document can be implemented in digital electronic circuits, or computer software, firmware or hardware, including the structures disclosed in this document and their structural equivalents, or a combination of one or more thereof. The disclosure and other embodiments can be implemented as one or more computer program products, i.e., one or more modules of computer program instructions encoded on a tangible and non-volatile computer-readable medium for execution by a data processing device or to control the operation of the data processing device. The computer-readable medium can be a machine-readable storage device, a machine-readable storage substrate, a storage device, a material composition that affects a machine-readable propagation signal, or a combination of one or more thereof. The term "data processing unit" or "data processing device" includes all devices, equipment and machines for processing data, including, for example, a programmable processor, a computer or a multiprocessor or a computer group. In addition to hardware, the device may also include code that creates an execution environment for a computer program, for example, code constituting processor firmware, a protocol stack, a database management system, an operating system, or a combination of one or more thereof. A propagated signal is an artificially generated signal, for example, a machine-generated electrical, optical or electromagnetic signal, which is generated to encode information for transmission to a suitable receiver device.

[0058] A computer program (also referred to as a program, software, software application, script, or code) may be written in any form of programming language (including compiled or interpreted languages) and may be deployed in any form, including as a stand-alone program or as a module, component, subroutine, or other unit suitable for use in a computing environment. A computer program does not necessarily correspond to a file in a file system. A program may be stored in a portion of a file that holds other programs or data (e.g., one or more scripts stored in a markup language document), in a single file dedicated to the program, or in multiple coordinated files (e.g., files that store one or more modules, subroutines, or portions of code). A computer program may be deployed for execution on one or more computers that are located at one site or distributed across multiple sites and interconnected by a communications network.

[0059] The processes and logic flows described in this document may be performed by one or more programmable processors executing one or more computer programs to perform functions by operating on input data and generating output. The processes and logic flows may also be performed by, and the apparatus may also be implemented as, special purpose logic circuits, such as an FPGA (field programmable gate array) or an ASIC (application specific integrated circuit).

[0060] For example, processors suitable for executing computer programs include general and special purpose microprocessors, and any one or more of any type of digital computer. Typically, the processor will receive instructions and data from a read-only memory or a random access memory or both. The basic components of a computer are a processor that executes instructions and one or more storage devices that store instructions and data. Typically, a computer will also include one or more mass storage devices for storing data, such as magnetic disks, magneto-optical disks, or optical disks, or operably coupled to receive data from a mass storage device or transfer data to a mass storage device, or both. However, a computer does not necessarily have such a device. Computer-readable media suitable for storing computer program instructions and data include all forms of non-volatile memory, media, and memory devices, including, for example, semiconductor memory devices, such as erasable programmable read-only memory (EPROM), electrically erasable programmable read-only memory (EEPROM), and flash memory devices; magnetic disks, such as internal hard disks or removable disks; magneto-optical disks; and compact disk read-only memory (CD ROM) and digital versatile disk read-only memory (DVD-ROM) disks. The processor and memory can be supplemented by dedicated logic circuits, or incorporated in dedicated logic circuits.

[0061] Although this patent document contains many details, they should not be construed as limitations on the scope of any invention or the claims, but rather as descriptions of features of particular embodiments of particular inventions. Certain features described in this patent document in the context of separate embodiments may also be implemented in combination in a single embodiment. Conversely, various functions described in the context of a single embodiment may also be implemented separately in multiple embodiments, or in any suitable subcombination. In addition, although the above-mentioned features may be described as working in certain combinations, or even initially claimed to be so, in some cases, one or more features in the claim combination may be removed from the combination, and the claim combination may be directed to subcombinations or variations of subcombinations.

[0062] Likewise, although operations are described in a particular order in the drawings, this should not be understood as requiring that such operations be performed in the particular order or order shown, or that all illustrated operations be performed, in order to achieve the desired results. In addition, the separation of various system components in the embodiments of this patent document should not be understood as requiring such separation in all embodiments.

[0063] Only a few implementations and examples are described, and other implementations, enhancements, and variations can be made based on what is described and illustrated in this patent document.

[0064] A first component is directly coupled to a second component when there are no intermediate components other than a line, trace, or another medium between the first component and the second component. A first component is indirectly coupled to a second component when there are intermediate components other than a line, trace, or another medium between the first component and the second component. The term "coupled" and its variations include direct coupling and indirect coupling. Unless otherwise specified, the use of the term "about" is meant to include a range of 10% above and below the value.

[0065] Although several embodiments are provided in the present disclosure, it should be understood that the disclosed systems and methods may be embodied in many other specific forms without departing from the spirit or scope of the present disclosure. The present examples are considered to be illustrative rather than restrictive and are not limited to the details given. For example, various elements or components may be combined or integrated in another system, or certain features may be omitted or not implemented.

[0066] In several embodiments provided herein, it should be understood that the disclosed devices and methods can also be implemented in other ways. The device embodiments described above are merely schematic. For example, the flowcharts and block diagrams in the accompanying drawings show the possible architecture, functions and operations of the devices, methods and computer program products according to multiple embodiments of the present invention. In this regard, each box in the flowchart or block diagram can represent a module, a program segment or a part of a code, and the module, program segment or a part of the code contains one or more executable instructions for implementing the specified logical functions. It should also be noted that in some alternative implementations, the functions marked in the box can also occur in a different order from the order marked in the accompanying drawings. For example, two consecutive boxes can actually be executed substantially in parallel, and they can sometimes be executed in the opposite order, depending on the functions involved. It should also be noted that each box in the block diagram and / or flowchart, and the combination of boxes in the block diagram and / or flowchart can be implemented with a dedicated hardware-based system that performs a specified function or action, or can be implemented with a combination of dedicated hardware and computer instructions.

[0067] In addition, without departing from the scope of the present disclosure, the discrete or separate techniques, systems, subsystems, and methods described and illustrated in the various embodiments may be combined or integrated with other systems, modules, techniques, or methods. Other items shown or discussed as coupled may be directly connected, or may be indirectly coupled or communicated electrically, mechanically, or otherwise through some interface, device, or intermediate component. Other examples of changes, substitutions, and alterations may be determined by those skilled in the art without departing from the spirit and scope disclosed herein.

Claims

1. A wafer loading process, characterized in that: include: Several temperature zones are arranged in sequence in the direction of travel, and the temperature range of each temperature zone is set; A protective gas is introduced into each temperature zone respectively, and a flow rate range of the protective gas introduced into each temperature zone is set.

2. The wafer loading process according to claim 1, characterized in that: Along the traveling direction, the temperature corresponding to each temperature zone increases and then decreases.

3. The wafer loading process according to claim 2, characterized in that: The temperature corresponding to at least one temperature zone is set to be lower than the temperature corresponding to the adjacent temperature zone, and the flow rate of the protective gas introduced into the low temperature zone is lower than the flow rate of the protective gas introduced into the high temperature zone.

4. The wafer loading process according to claim 1, characterized in that: Eight temperature zones are arranged in sequence, and the temperature ranges of each temperature zone are: 240-340°C, 300-400°C, 360-460°C, 380-460°C, 360-460°C, 300-400°C, 240-340°C, and 180-280°C.

5. The wafer loading process according to claim 4, characterized in that: The flow ranges of protective gas entering each temperature zone are: 1-3L / min, 1-3L / min, 3-7L / min, 1-4L / min, 3-7L / min, 3-7L / min, 1-3L / min, 1-3L / min.

6. The wafer loading process according to claim 1, characterized in that: Six temperature zones are arranged in sequence, and the temperature ranges of each temperature zone are: 300-400°C, 360-460°C, 380-480°C, 360-460°C, 300-400°C, and 240-340°C.

7. The wafer loading process according to claim 6, characterized in that: The flow ranges of protective gas entering each temperature zone are: 3-7L / min, 3-7L / min, 3-7L / min, 1-4L / min, 3-7L / min, and 1-3L / min.

8. A film loading system, characterized in that: include: Conveyor tracks, temperature control devices and flow control devices; in Arrange a plurality of temperature zones in sequence in the direction of travel of the conveying track, and set the temperature range of each temperature zone by the temperature control device; The protective gas is introduced into each temperature zone respectively through the flow control device, and the flow range of the protective gas introduced into each temperature zone is set.

9. The film loading system according to claim 8, characterized in that: Eight temperature zones are arranged in sequence, and the temperature ranges of each temperature zone are: 240-340°C, 300-400°C, 360-460°C, 380-460°C, 360-460°C, 300-400°C, 240-340°C, 180-280°C; The flow ranges of protective gas entering each temperature zone are: 1-3L / min, 1-3L / min, 3-7L / min, 1-4L / min, 3-7L / min, 3-7L / min, 1-3L / min, 1-3L / min.

10. The film loading system according to claim 8, characterized in that: Six temperature zones are arranged in sequence, and the temperature ranges of each temperature zone are: 300-400°C, 360-460°C, 380-480°C, 360-460°C, 300-400°C, 240-340°C; The flow ranges of protective gas entering each temperature zone are: 3-7L / min, 3-7L / min, 3-7L / min, 1-4L / min, 3-7L / min, and 1-3L / min.

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