Semiconductor structure, method of forming pattern, and semiconductor memory device
By forming an annular pre-pattern in the semiconductor manufacturing process and etching with an isolation layer, the problem of difficulty in forming complex micro patterns is solved in traditional technology, and high-precision formation and shape control of micro patterns are achieved.
Patent Information
- Application Number
- CN202411577695.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2025-02-25
AI Technical Summary
Traditional semiconductor manufacturing processes are difficult to form small and complex tiny patterns that cannot meet the production needs of complex integrated circuits.
By forming an annular pre-pattern and etching with an isolation layer, a target pattern is formed, the pattern including both ends in the first direction, one end is a first edge pattern, the other end is a second edge pattern, and both ends have a concave structure.
The formation and shape control of tiny patterns are realized, and the problem of insufficient small patterns in traditional technology is overcome.
Smart Images
Figure CN119517758A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor structure, a method for forming a pattern, and a semiconductor storage device. Background Art
[0002] In the semiconductor manufacturing process, the manufacture of some microstructures requires the use of photolithography and etching to form tiny patterns with precise dimensions in appropriate substrates or material layers such as semiconductor substrates / film layers, dielectric material layers or metal material layers.
[0003] In conventional technology, a mask layer is formed on a target material layer so that these tiny patterns are first formed / defined in the mask layer and then transferred to the target film layer.
[0004] However, as integrated circuits become more complex, the sizes of these tiny patterns continue to decrease, and traditional methods of forming tiny patterns cannot meet the manufacturing process requirements. Summary of the invention
[0005] Based on this, it is necessary to provide a semiconductor structure for preparing a micro-pattern, a method for forming a pattern, and a semiconductor storage device.
[0006] In a first aspect, the present application provides a method for forming a pattern, comprising:
[0007] forming an etching target layer;
[0008] Etching the etching target layer to form an annular pre-pattern, wherein the annular pre-pattern includes a plurality of first strip patterns extending along the first direction and arranged at intervals along the second direction, and a plurality of second strip patterns extending along the second direction and arranged at intervals along the first direction, wherein the first strip pattern is located between two adjacent second strip patterns, and ends of the first strip patterns are respectively in contact with the second strip patterns;
[0009] An isolation layer is formed, and the annular pre-pattern is etched through the isolation layer to form a target pattern.
[0010] In one embodiment, the isolation layer has a plurality of light-transmitting areas, and the plurality of light-transmitting areas are alternately arranged above the second strip pattern, and each of the light-transmitting areas exposes one end of the first strip pattern, so that one end of the target pattern is a first edge pattern, and the other end is a second edge pattern.
[0011] In one embodiment, the light-transmitting area is circular or elliptical, the first edge graphic is a concave structure along the first direction, the width of the second edge graphic in the second direction is greater than the width of the first edge graphic, and both sides of the second edge graphic along the second direction are concave structures.
[0012] In one embodiment, the light-transmitting area is elliptical, and a line connecting two foci of the ellipse is parallel to the first direction.
[0013] In one embodiment, the first strip pattern includes a first end and a second end, and along the second direction, the plurality of light-transmitting regions sequentially and alternately expose the first end and the second end of the first strip pattern.
[0014] In one of the embodiments, on the same side of the target pattern, the first edge graphics and the second edge graphics are alternately distributed.
[0015] In one embodiment, along the second direction, an end of the first strip pattern located at the outermost edge directly contacts an end of the second strip pattern.
[0016] In one embodiment, etching the etching target layer to form a ring-shaped pre-pattern includes:
[0017] forming a plurality of strip-shaped axes on the etching target layer; the strip-shaped axes extend along the first direction;
[0018] forming a ring-shaped mask surrounding the strip-shaped axis;
[0019] removing the strip-shaped shaft;
[0020] forming a pre-pattern mask, wherein the pre-pattern mask exposes a portion of the etching target layer and a portion of the annular mask;
[0021] The etching target layer is etched using the pre-pattern mask and the annular mask as etching masks to form the annular pre-pattern.
[0022] In a second aspect, the present application further provides a semiconductor structure, the semiconductor structure comprising:
[0023] A plurality of target patterns, wherein the target patterns extend along a first direction, and the plurality of target patterns are arranged at intervals along the second direction;
[0024] Among them, one end of the target pattern is a first edge figure, and the other end is a second edge figure, the first edge figure is a first concave structure along the first direction, the width of the second edge figure in the second direction is greater than the width of the first edge figure, and the two sides of the second edge figure along the second direction are respectively a second concave structure and a third concave structure.
[0025] In one embodiment, at least one of the first concave structure, the second concave structure, and the third concave structure is in a concave arc shape.
[0026] In one embodiment, the target pattern is formed in a first region of a substrate, the substrate further includes a second region, and the semiconductor structure further includes one or more peripheral patterns, and the peripheral patterns are arranged in the second region along the second direction.
[0027] In a third aspect, the present application further provides a semiconductor storage device, which includes a pattern formed by the method, or includes the semiconductor structure.
[0028] In the above method for forming a pattern, after forming an etching target layer, it is etched to form a ring-shaped pre-pattern, and then an isolation layer is set to etch the ring-shaped pre-pattern to form a target pattern. The target pattern includes two ends along a first direction, one end is a first edge pattern, and the other end is a second edge pattern, and the first edge pattern and the second edge pattern include a concave structure. In this way, by forming a pattern through a multi-step process, a micro-pattern can be realized, and the shape of the micro-pattern can be controlled, which overcomes the problem that a single patterning method in the traditional technology cannot form a micro-pattern. BRIEF DESCRIPTION OF THE DRAWINGS
[0029] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the conventional technology, the drawings required for use in the embodiments or the conventional technology descriptions are briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.
[0030] Figure 1 A flow chart of a method for forming a pattern in one embodiment;
[0031] Figure 2a A top view of forming an etching target layer and a peripheral pattern in one embodiment;
[0032] Figure 2b for Figure 2a A side cross-sectional view taken along line A-A';
[0033] Figure 3a A top view of a strip-shaped shaft formed in one embodiment;
[0034] Figure 3b for Figure 3a A side cross-sectional view taken along line A-A';
[0035] Figure 4a A top view of forming a ring-shaped mask in one embodiment;
[0036] Figure 4b for Figure 4a A side cross-sectional view taken along line A-A';
[0037] Figure 5a A top view of an embodiment with the strip-shaped shaft removed;
[0038] Figure 5b for Figure 5a A side cross-sectional view taken along line A-A';
[0039] Figure 6a A top view of forming an isolation layer in one embodiment;
[0040] Figure 6b for Figure 6a A side cross-sectional view taken along line A-A';
[0041] Figure 6c for Figure 6a A side cross-sectional view taken along line BB' in FIG.
[0042] Figure 7a A schematic diagram of a pre-pattern mask formed by etching in one embodiment;
[0043] Figure 7b for Figure 7a A side cross-sectional view taken along line A-A';
[0044] Figure 7c for Figure 7a A side cross-sectional view taken along line BB' in FIG.
[0045] Figure 8a A top view of forming an isolation layer in one embodiment;
[0046] Figure 8b for Figure 8a A side cross-sectional view taken along line A-A';
[0047] Figure 8c for Figure 8a A side cross-sectional view taken along line BB' in FIG.
[0048] Figure 9a A schematic diagram of etching to obtain a target pattern in one embodiment;
[0049] Figure 9b for Figure 9a A side cross-sectional view taken along line A-A';
[0050] Fig.9c for Figure 9a A side cross-sectional view taken along line BB' in FIG.
[0051] Description of reference numerals:
[0052] 100, substrate; 100a, first zone; 100b, second zone; 110, etching target layer; 120, annular pre-pattern; 121, first strip pattern; 122, second strip pattern; 123, target pattern; 123a, first edge pattern; 123b, second edge pattern; 124, strip axis; 126, annular mask; 127, pre-pattern mask; 130, isolation layer; 131, light-transmitting area; 140, peripheral pattern; X, first direction; Y, second direction; Z, third direction. DETAILED DESCRIPTION
[0053] In order to facilitate understanding of the present disclosure, the present disclosure will be described more fully below with reference to the relevant drawings. The preferred embodiments of the present disclosure are shown in the drawings. However, the present disclosure can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present disclosure more thorough and comprehensive.
[0054] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. The terms used herein in the specification of the present disclosure are only for the purpose of describing specific embodiments and are not intended to limit the present disclosure.
[0055] It should be understood that when an element or layer is referred to as "on ...", "adjacent to ...", "connected to" or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to or coupled to other elements or layers, or there can be intervening elements or layers. On the contrary, when an element is referred to as "directly on ...", "directly adjacent to ...", "directly connected to" or "directly coupled to" other elements or layers, there is no intervening element or layer. It should be understood that although the terms first, second, third, etc. can be used to describe various elements, components, regions, layers, doping types and / or parts, these elements, components, regions, layers, doping types and / or parts should not be limited by these terms. These terms are only used to distinguish an element, component, region, layer, doping type or part from another element, component, region, layer, doping type or part. Therefore, without departing from the teachings of the present invention, the first element, component, region, layer, doping type or part discussed below can be represented as a second element, component, region, layer or part.
[0056] It should be noted that the illustrations provided in this embodiment are only schematic illustrations of the preferred embodiments of the present disclosure, and the type, quantity and proportion of each component in this embodiment may also be changed, and the component layout may also be more complex.
[0057] Please refer to Figures 1 to 9c , Figure 1A flow chart of a method for forming a pattern in one embodiment; Figure 2a A top view of forming an etching target layer and a peripheral pattern in one embodiment; Figure 2b for Figure 2a A side cross-sectional view taken along line A-A'; Figure 3a A top view of a strip-shaped shaft formed in one embodiment; Figure 3b for Figure 3a A side cross-sectional view taken along line A-A'; Figure 4a A top view of forming a ring-shaped mask in one embodiment; Figure 4b for Figure 4a A side cross-sectional view taken along line A-A'; Figure 5a A top view of an embodiment with the strip-shaped shaft removed; Figure 5b for Figure 5a A side cross-sectional view taken along line A-A'; Figure 6a A top view of forming an isolation layer in one embodiment; Figure 6b for Figure 6a A side cross-sectional view taken along line A-A'; Figure 6c for Figure 6a A side cross-sectional view taken along line BB' in FIG. Figure 7a A schematic diagram of a pre-pattern mask formed by etching in one embodiment; Figure 7b for Figure 7a A side cross-sectional view taken along line A-A'; Figure 7c for Figure 7a A side cross-sectional view taken along line BB' in FIG. Figure 8a A top view of forming an isolation layer in one embodiment; Figure 8b for Figure 8a A side cross-sectional view taken along line A-A'; Figure 8c for Figure 8a A side cross-sectional view taken along line BB' in FIG. Figure 9a A schematic diagram of etching to obtain a target pattern in one embodiment; Figure 9b for Figure 9a A side cross-sectional view taken along line A-A'; Fig.9c for Figure 9a A side cross-sectional view taken along line BB'.
[0058] like Figure 1 As shown, Figure 1 A flow chart of a method for forming a pattern in an embodiment is shown. In some embodiments, a method for forming a pattern includes the following steps S11 to S13.
[0059] S11, such as Figure 2a and Figure 2b As shown, an etch target layer 110 is formed.
[0060] Exemplarily, the etching target layer 110 is formed on the substrate 100. The substrate 100 may be made of a semiconductor material, an insulating material, a conductor material or any combination thereof. The substrate 100 may be a single-layer structure or a multi-layer structure. For example, the substrate 100 may be a silicon (Si) substrate 100, a silicon germanium (SiGe) substrate 100, a silicon germanium carbon (SiGeC) substrate 100, a silicon carbide (SiC) substrate 100, a gallium arsenide (GaAs) substrate 100, an indium arsenide (InAs) substrate 100, an indium phosphide (InP) substrate 100 or other III / V semiconductor substrates 100 or II / VI semiconductor substrates 100. Alternatively, for example, the substrate 100 may be a layered substrate 100 including Si / SiGe, Si / SiC, silicon on insulator (SOI) or silicon germanium on insulator. Therefore, the type of the substrate 100 should not limit the scope of protection of the present disclosure.
[0061] Exemplarily, the substrate 100 defines a first region 100a and a second region 100b, the etching target layer 110 is formed on the first region 100a, and the second region 100b is used to form a logic unit. Optionally, the second region 100b may be formed with a plurality of peripheral patterns 140 staggered along the first direction X.
[0062] Exemplarily, the etching target layer 110 and the peripheral pattern 140 can be formed together through the same photolithography process and include the same material, for example, both include a conductive material, such as tungsten (W), aluminum (Al) or copper (Cu) and other low-resistance metal materials, or both include a dielectric material, such as silicon oxide, silicon nitride (SiN), silicon oxynitride (SiON) or silicon carbonitride (SiCN), but not limited thereto. In this way, the target pattern 123 formed by etching the target layer 110 is consistent with the material of the peripheral pattern 140.
[0063] In the following embodiments, the first direction X and the second direction Y may be directions parallel to the substrate 100 , and the first direction X and the second direction Y are perpendicular to each other, and the third direction Z is a direction perpendicular to the substrate 100 .
[0064] S12, such as Figures 2a to 7c As shown, the target layer 110 is etched to form a ring-shaped pre-pattern 120. The structure of the ring-shaped pre-pattern 120 is as shown in FIG. Figure 7a~7c The annular pre-pattern 120 includes a plurality of first strip patterns 121 extending along the first direction X and arranged at intervals along the second direction Y, and a plurality of second strip patterns 122 extending along the second direction Y and arranged at intervals along the first direction X, wherein the first strip pattern 121 is located between two adjacent second strip patterns 122, and the ends of the first strip pattern 121 are in contact with the second strip patterns 122 respectively.
[0065] Exemplarily, the first strip pattern 121 is a strip structure extending along the first direction X. Thus, the first strip pattern 121 has a first end and a second end along the first direction X. A plurality of first strip patterns 121 are arranged at intervals along the second direction Y.
[0066] Exemplarily, the second strip pattern 122 extends along the second direction Y, and two second strip patterns 122 are respectively located at both ends of the plurality of first strip patterns 121 , so that the first end of the first strip pattern 121 contacts one second strip pattern 122 , and the second end of the first strip pattern 121 contacts another second strip pattern 122 .
[0067] S13, see Figure 8a~Figure 9c , forming an isolation layer 130 , and etching the ring-shaped pre-pattern 120 through the isolation layer 130 to form a target pattern 123 .
[0068] For example, see Figure 9a One end of the target pattern 123 is a first edge figure 123a, and the other end is a second edge figure 123b. The first edge figure 123a is a first concave structure along the first direction X, the width of the second edge figure 123b in the second direction Y is greater than the width of the first edge figure 123a, and the two sides of the second edge figure 123b along the second direction Y are the second concave structure and the third concave structure respectively.
[0069] Exemplarily, the isolation layer 130 can be used as an etching mask, and the annular pre-pattern 120 is etched based on the etching mask, including etching the first strip pattern 121 and the second strip pattern 122 to obtain a target pattern 123. Among them, a plurality of target patterns 123 are arranged along the second direction Y, and one end of a target pattern 123 is a first edge pattern 123a, and the other end is a second edge pattern 123b.
[0070] Exemplarily, the material of the mask layer may be silicon oxide; the position and shape are defined by the patterned photoresist layer.
[0071] Exemplarily, when the isolation layer 130 is used as an etching mask, it includes a shielding area and a light-transmitting area. The etching ion beam cannot pass through the shielding area, but can pass through the light-transmitting area to etch the annular pre-pattern 120. A photoresist is coated on the mask layer, and a patterned photoresist layer is formed through a series of steps such as exposure and development. The annular pre-pattern 120 is etched based on the photoresist layer. The shapes of the second concave structure and the third concave structure can be the same or different, which can be achieved by changing the morphology of the light-transmitting area of the isolation layer 130.
[0072] Exemplarily, when one end of the target pattern 123 forms a first edge pattern 123a, and the other end forms a second edge pattern 123b, and the first edge pattern 123a is a first concave structure along the first direction, both sides of the second edge pattern 123b along the second direction are concave structures, namely, a second concave structure and a third concave structure, one of the second concave structure and the third concave structure is concave along the second direction Y, and the other is concave in the opposite direction of the second direction Y. In this way, the distance between the ends of two adjacent target patterns 123 can be increased, providing a larger safety distance to avoid electrical connection contact.
[0073] In the above method for forming a pattern, after forming the etching target layer 110, it is etched to form a ring-shaped pre-pattern 120, and then an isolation layer 130 is set to etch the ring-shaped pre-pattern 120 to form a target pattern 123. The target pattern 123 includes two ends along the first direction X, one end is a first edge pattern 123a, and the other end is a second edge pattern 123b, and the first edge pattern 123a and the second edge pattern 123b include a concave structure. In this way, by forming a pattern through a multi-step process, a micro-pattern can be realized, and the shape of the micro-pattern can be controlled, which overcomes the problem that a single patterning method in the traditional technology cannot form a micro-pattern.
[0074] See also Figure 2a~Figure 9c , showing the steps of forming patterns in some embodiments. Figure 2a and Figure 2b The etching target layer 110 is first formed in the first area 100 a on the substrate 100 . Exemplarily, the peripheral pattern 140 is formed in the second area 100 b of the substrate 100 .
[0075] See also Figure 3a~Figure 7c Then, the ring-shaped pre-pattern 120 is formed by etching the etching target layer 110. In some embodiments, step S12 etches the etching target layer 110 to form the ring-shaped pre-pattern 120, including the following steps S121-S125.
[0076] S121, see Figure 3a and Figure 3b , a plurality of strip axes 124 are formed on the etching target layer 110 ; the strip axes 124 extend along the first direction X.
[0077] Exemplarily, the strip-shaped axis 124 extends along the first direction X and extends out of the etching target layer 110 .
[0078] S122, see Figure 4a and Figure 4b , forming a ring-shaped mask 126 surrounding the strip axis 124 .
[0079] Exemplarily, the annular mask 126 is disposed around the strip axis 124 with the strip axis 124 as the center.
[0080] S123, see Figure 5a and Figure 5b , remove the strip shaft 124 and retain the annular mask 126, thus obtaining a hollow annular mask 126.
[0081] S124, see Figure 6a , Figure 6b and Figure 6c , a pre-pattern mask 127 is formed, and the pre-pattern mask 127 exposes a portion of the etching target layer 110 and a portion of the annular mask 126.
[0082] Exemplarily, the pre-pattern mask 127 is ring-shaped, the middle area is a transparent area, exposing part of the etching target layer 110 and part of the ring mask 126, and the ring area is a non-transparent area, blocking the non-exposed area, including blocking the peripheral pattern 140.
[0083] S125, see Figure 7a , Figure 7b and Figure 7c The target layer 110 is etched using the pre-pattern mask 127 and the ring mask 126 as etching masks to form a ring-shaped pre-pattern 120 .
[0084] In some embodiments, the obtained pre-pattern mask 127 has two first strip patterns 121 located at the edge along the second direction Y, and the end of the first strip pattern 121 located at the edge directly contacts the end of the second strip pattern 122. In this way, the two first strip patterns 121 located at the edge and the two opposite second strip patterns 122 are connected end to end to form a ring structure. The multiple first strip patterns 121 arranged along the second direction Y and located in the middle are connected between the two second strip patterns 122, and the multiple first strip patterns 121 are distributed at intervals to facilitate the formation of the target pattern 123.
[0085] like Figure 8a~Figure 9c As shown, after forming the pre-pattern mask 127, etching is performed through the isolation layer 130 to obtain a stripe pattern. Figure 8a~Figure 8c As shown, an isolation layer 130 is formed. Figure 8a, the isolation layer 130 has a plurality of light-transmitting regions 131, and the light-transmitting regions 131 are used as regions through which the ion beam passes to etch the annular pre-pattern 120. The plurality of light-transmitting regions 131 are alternately arranged above the second strip pattern 122, and each light-transmitting region 131 exposes one end of the first strip pattern 121. In this way, one light-transmitting region 131 exposes a portion of the second strip pattern 122 and a portion of the first strip pattern 121, and the exposed portion of the light-transmitting region 131 is removed during etching to remove the exposed first strip pattern 121 and second strip pattern 122, thereby obtaining a target pattern 123, so that one end of the target pattern 123 is a first edge pattern 123a, and the other end is a second edge pattern 123b.
[0086] The first strip pattern 121 includes a first end and a second end, the first ends of the plurality of first strip patterns 121 are located on the same side, and the second ends of the plurality of first strip patterns 121 are located on the same side. Exemplarily, the two second strip patterns 122 are defined as the first side and the second side, respectively, then the first ends of the plurality of first strip patterns 121 are connected to the second strip pattern 122 on the first side, and the second ends of the plurality of second strip patterns 122 are connected to the second strip pattern 122 on the second side.
[0087] See also Figure 8a , the plurality of light-transmitting regions 131 alternately expose one end of the first strip pattern 121, and after being etched away, see Figure 9a The end of the first strip pattern 121 that is etched away forms a first edge pattern 123a, and the end that is not etched forms a second edge pattern 123b.
[0088] Thus, along the second direction Y, the plurality of light-transmitting regions 131 sequentially and alternately expose the first end and the second end of the first strip pattern 121, so that the first edge pattern 123a of one first strip pattern 121 is adjacent to the second edge pattern 123b of another first strip pattern 121, and the second edge pattern 123b of one first strip pattern 121 is adjacent to the first edge pattern 123a of another first strip pattern 121. Thus, on the same side of the target pattern 123, the first edge patterns 123a and the second edge patterns 123b of the plurality of target patterns 123 are alternately distributed.
[0089] See also Figure 8a In some embodiments, the light-transmitting area 131 is circular or elliptical. Thus, when the annular pre-pattern 120 is etched, the end of the first strip pattern 121 in the exposed area is etched away to form an arc edge, and one section of the second strip pattern 122 is etched away to form an arc edge. After removing the isolation layer 130, the following is obtained: Figure 9aThe first edge graphic 123a is a concave structure along the first direction X. For example, the concave structure of the first edge graphic 123a is a concave arc.
[0090] The width of the second edge pattern 123b in the second direction Y is greater than that of the first edge pattern 123a, because the width in the second direction Y is formed by the second strip pattern, and the second strip pattern 122 originally extends along the second direction Y, so the width of the remaining portion is still greater than the width of the first strip pattern 121. At the same time, both sides of the second edge pattern 123b along the second direction Y are concave structures. Exemplarily, both sides of the second edge pattern 123b along the second direction Y are concave arcs.
[0091] Further, in Figure 8a In the embodiment, the light-transmitting region 131 is configured as an ellipse, and the line connecting the two foci of the ellipse is parallel to the first direction X. In this way, the light-transmitting region 131 is in a shape with a longer length along the first direction X, so when the annular pre-pattern 120 is etched, a larger portion of the end of the first strip pattern 121 is etched and removed, so that the spacing between the two adjacent target patterns 123 is increased, and the two adjacent target patterns 123 are prevented from contacting each other.
[0092] Continue to see Figure 9a In some embodiments, a semiconductor structure includes: a plurality of target patterns 123, the target patterns 123 extend along a first direction X, and the plurality of target patterns 123 are arranged at intervals along a second direction Y. One end of the target pattern 123 is a first edge pattern 123a, and the other end is a second edge pattern 123b, the first edge pattern 123a is a first concave structure along the first direction X, the width of the second edge pattern 123b in the second direction Y is greater than the width of the first edge pattern 123a, and the two sides of the second edge pattern 123b along the second direction Y are the second concave structure and the third concave structure, respectively.
[0093] Exemplarily, at least one of the first concave structure, the second concave structure, and the third concave structure is in the shape of a concave arc. In a feasible implementation, the first concave structure, the second concave structure, and the third concave structure are all in the shape of a concave arc.
[0094] Exemplarily, the target pattern 123 is formed in the first region 100 a of the substrate 100 . The substrate 100 further includes a second region 100 b . The semiconductor structure further includes one or more peripheral patterns 140 . The peripheral patterns 140 are arranged along the second direction Y in the second region 100 b .
[0095] The present application also provides a semiconductor storage device, which includes a semiconductor structure prepared by the method provided in any of the above embodiments, or includes a semiconductor structure provided in any of the above embodiments.
[0096] In the description of this specification, the description with reference to the terms "some embodiments", "other embodiments", etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic description of the above terms does not necessarily refer to the same embodiment or example.
[0097] The technical features of the above-described embodiments may be arbitrarily combined. To make the description concise, not all possible combinations of the technical features in the above-described embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.
[0098] The above-described embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.
Claims
1. A method for forming a pattern, characterized in that: include: forming an etching target layer; Etching the etching target layer to form an annular pre-pattern, wherein the annular pre-pattern includes a plurality of first strip patterns extending along the first direction and arranged at intervals along the second direction, and a plurality of second strip patterns extending along the second direction and arranged at intervals along the first direction, wherein the first strip pattern is located between two adjacent second strip patterns, and ends of the first strip patterns are respectively in contact with the second strip patterns; An isolation layer is formed, and the annular pre-pattern is etched through the isolation layer to form a target pattern.
2. The method according to claim 1, characterized in that The isolation layer has a plurality of light-transmitting areas, which are alternately arranged above the second strip pattern, and each of the light-transmitting areas exposes one end of the first strip pattern, so that one end of the target pattern is a first edge pattern and the other end is a second edge pattern.
3. The method according to claim 2, characterized in that The light-transmitting area is circular or elliptical, the first edge graphic is a concave structure along the first direction, the width of the second edge graphic in the second direction is greater than the width of the first edge graphic, and both sides of the second edge graphic along the second direction are concave structures.
4. The method according to claim 3, characterized in that The light-transmitting area is elliptical, and a line connecting two foci of the ellipse is parallel to the first direction.
5. The method according to claim 2, characterized in that: The first strip pattern includes a first end and a second end. Along the second direction, the plurality of light-transmitting regions sequentially and alternately expose the first end and the second end of the first strip pattern.
6. The method according to claim 2, characterized in that On the same side of the target pattern, the first edge graphics and the second edge graphics are alternately distributed.
7. The method according to claim 1, characterized in that Along the second direction, an end of the first strip pattern located at the outermost edge directly contacts an end of the second strip pattern.
8. The method according to claim 1, characterized in that: The etching the etching target layer to form a ring-shaped pre-pattern comprises: forming a plurality of strip-shaped axes on the etching target layer; the strip-shaped axes extend along the first direction; forming a ring-shaped mask surrounding the strip-shaped axis; removing the strip-shaped shaft; forming a pre-pattern mask, wherein the pre-pattern mask exposes a portion of the etching target layer and a portion of the annular mask; The etching target layer is etched using the pre-pattern mask and the annular mask as etching masks to form the annular pre-pattern.
9. A semiconductor structure, characterized in that: The semiconductor structure comprises: A plurality of target patterns, wherein the target patterns extend along a first direction, and the plurality of target patterns are arranged at intervals along a second direction; Among them, one end of the target pattern is a first edge figure, and the other end is a second edge figure, the first edge figure is a first concave structure along the first direction, the width of the second edge figure in the second direction is greater than the width of the first edge figure, and the two sides of the second edge figure along the second direction are respectively a second concave structure and a third concave structure.
10. The semiconductor structure according to claim 9, characterized in that: At least one of the first concave structure, the second concave structure, and the third concave structure is in a concave arc shape.
11. The semiconductor structure according to claim 9, characterized in that: The target pattern is formed in a first region of a substrate. The substrate further includes a second region. The semiconductor structure further includes one or more peripheral patterns. The peripheral patterns are arranged in the second region along the second direction.
12. A semiconductor storage device, characterized in that: The semiconductor storage device comprises a pattern formed by the method according to any one of claims 1 to 8, or comprises a semiconductor structure according to any one of claims 9 to 12.