Novel back helium inlet device and application method thereof

Abstract

The invention discloses a novel back helium gas inlet device and an application method thereof, and belongs to the technical field of semiconductor equipment, the novel back helium gas inlet device is arranged in a semiconductor equipment cavity, a reflecting plate is arranged in the semiconductor equipment cavity, and a gas inlet for introducing and discharging helium is formed in the reflecting plate; the novel back helium inlet device comprises a light-transmitting shunting buffer plate, the light-transmitting shunting buffer plate is arranged above the reflecting plate and below the wafer, and a gap is formed between the upper portion of the light-transmitting shunting buffer plate and the wafer. A plurality of vertically-through air holes are distributed in the range, corresponding to the wafer, of the light-transmitting shunting buffer plate; a groove is formed in the bottom surface of the light-transmitting shunting buffer plate to form a gas channel for connecting the air holes; and the gas channel is communicated with the gas inlet pipe through the gas inlet. According to the invention, the flow velocity of the back surface of the wafer is effectively reduced, the situation that the wafer is blown to be deflected and scrapped is avoided, uniform distribution of process gas is ensured, and the cooling rate is accelerated.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductor equipment, and in particular relates to a novel back-helium intake device and an application method thereof. Background Art

[0002] In the semiconductor manufacturing process, cooling of the wafer is a crucial link. Back helium cooling is a commonly used cooling method. Its basic principle is to pass helium through the back of the wafer. The wafer is generally located in a vacuum environment in the equipment cavity. The helium molecules passed through form a heat transfer medium and the coldness of the helium molecules themselves to quickly reduce the temperature of the wafer. In particular, in the spike annealing process, a faster cooling rate and a shorter cooling time are required, and back helium is a very advantageous means.

[0003] However, in actual applications, there are some problems with back helium cooling. For example, a too fast helium flow rate may cause the wafer to be blown off course, resulting in wafer skipping, which affects the quality and yield of the product. In addition, the rapid flow of helium may also corrode the hardware surface in the chamber, leading to the generation of particulate matter, further affecting the quality of the product and the life of the hardware.

[0004] The existing solution is to control the cooling rate of the wafer by adjusting the flow and pressure of helium, but it still cannot achieve a relatively ideal effect, mainly due to the following reasons.

[0005] 1. Due to the eccentric structure of the helium inlet, the process gas distribution will be uneven.

[0006] 2. In the existing solution, helium enters the chamber through the helium exhaust port on the back of the reflector. If the flow rate is too large, the wafer will be blown off course, and the cooling rate of the wafer cannot be further reduced by increasing the flow rate, making it impossible to further reduce T-50.

[0007] 3. The rapid flow of helium may also purge the hardware in the chamber, resulting in the generation of particles, further affecting the quality of the product and the life of the hardware.

[0008] T-50 is an important technical indicator for measuring process performance in the spike annealing process. It refers to the time required for the wafer temperature to drop from the peak temperature to 50K below the peak temperature during the annealing process. Reducing the T-50 time can reduce the thermal budget, thereby limiting the unnecessary diffusion of dopants, which is critical to maintaining the integrity and performance of semiconductor devices. In short, T-50 is a key parameter for measuring the temperature control accuracy during the RTP process, which has a direct impact on the performance and reliability of semiconductor devices.

[0009] Therefore, the existing technology has certain limitations and needs further improvement and innovation. Summary of the invention

[0010] Based on the technical problems existing in the prior art, the present invention provides a novel back-helium air intake device and an application method thereof, which solve the problems in the prior art that the wafer may be blown off-center, the wafer cooling rate is difficult to further increase, and particulate pollution will be generated. The uniform distribution of the process gas and the accelerated cooling rate are ensured through structural improvement design, the adjustability of the back-helium in processes such as rapid thermal annealing is improved, and the energy utilization efficiency is improved.

[0011] According to the technical scheme of the present invention, the present invention provides a new type of back-helium gas intake device, which is arranged in a chamber of a semiconductor device, wherein a reflective plate is provided in the chamber of the semiconductor device, and a wafer support is provided around the reflective plate, and the wafer is supported above the wafer support, and the wafer is located above the reflective plate; an air inlet is provided on the reflective plate; the new type of back-helium gas intake device includes a light-transmitting diversion buffer plate, which is provided above the reflective plate and below the wafer, and there is a gap between the top of the light-transmitting diversion buffer plate and the wafer; the light-transmitting diversion buffer plate is provided with a plurality of air holes which pass through from top to bottom in a range corresponding to the wafer; a groove is provided on the bottom surface of the light-transmitting diversion buffer plate to form a gas channel connecting the air holes; the gas channel is connected to the air inlet pipe through the air inlet.

[0012] Furthermore, all the air holes are located in the air channel.

[0013] Furthermore, the gas channel includes a plurality of concentric annular grooves, and all the concentric annular grooves are connected through connecting channels.

[0014] Furthermore, there are three concentric annular grooves, namely the first gas channel, the second gas channel and the third gas channel, and the diameters of the first gas channel, the second gas channel and the third gas channel decrease successively; the first gas channel and the second gas channel, as well as the second gas channel and the third gas channel, are connected by a connecting channel, and the connecting channel is a straight segment-shaped groove.

[0015] Furthermore, the first gas channel is located at the outermost side of the gas channel, and 24 pores are evenly distributed in the first gas channel; the second gas channel is located between the first gas channel and the third gas channel, and 16 pores are evenly distributed in the second gas channel; the third gas channel is located at the innermost side of the gas channel, and 8 pores are evenly distributed in the third gas channel.

[0016] Furthermore, the back side or interior of the reflector has an air path for connecting all the air inlets; the number of the air inlets does not exceed three, and / or the positions of the three air inlets correspond to the first gas channel, the second gas channel and the third gas channel respectively.

[0017] Furthermore, the light-transmitting diversion buffer plate is a quartz plate.

[0018] Furthermore, the thickness of the light-transmitting diversion buffer plate is 2 mm±0.5 mm, and the diameter of the pore is 2 mm±0.5 mm; and / or the diameter of the air inlet is smaller than the diameter of the pore.

[0019] Furthermore, the light-transmitting diversion buffer plate is provided with three ejector holes for ejector pins to pass through, and the ejector holes are located outside the gas channel.

[0020] According to the technical solution of the present invention, the present invention also provides an application method of a new back-helium gas intake device, in which the semiconductor equipment used has the new back-helium gas intake device described in the present invention, which includes the following steps: helium gas flows into the gas channel of the light-transmitting diversion buffer plate after passing through the gas intake pipe and the gas intake port in sequence, the helium gas is conducted in the gas channel, and then flows to the back side of the wafer through the air holes, thereby achieving uniform cooling of the wafer.

[0021] Compared with the prior art, the beneficial technical effects of the present invention are as follows: 1. The novel back-helium air intake device and its application method of the present invention solve the problem in the existing back-helium cooling technology that the helium flow rate is too fast, which may cause the wafer to be blown off course, thereby causing the wafer to jump. By adding a quartz plate structure with a through-hole structure between the reflector and the wafer as a buffer layer, the flow rate on the back of the wafer is effectively reduced, thereby avoiding the occurrence of the wafer being blown off course and being scrapped.

[0022] 2. The novel back-helium air intake device and its application method of the present invention solve the technical problem in the prior art that helium gas blows on the hardware surface in the chamber, resulting in the generation of particulate matter. By adding a quartz plate structure for back-helium air intake, the generation of particulate matter is effectively prevented, and the erosion of key hardware structures in the chamber is reduced, thereby extending its service life.

[0023] 3. The novel back-helium intake device and its application method of the present invention solve the problem of uneven distribution of process gas in the prior art. By designing sufficient through holes, the uniform distribution of process gas and the accelerated cooling rate are ensured, the adjustability of back-helium in processes such as rapid thermal annealing is improved, and the energy utilization efficiency is improved.

[0024] 4. The novel back-helium air intake device and its application method of the present invention can reduce the air inlets for helium gas in the reflector to 3 or less. In the existing scheme, there are usually 12 air inlets on the reflector. More air inlets usually affect the emissivity of the reflector. Therefore, the present invention effectively reduces the impact of the air inlets on the emissivity, reduces the cost of the reflector, and improves the efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] Figure 1It is a top view of a semiconductor device with a back helium intake device provided by the present invention.

[0026] Figure 2a yes Figure 1 A schematic cross-sectional structural diagram of the process chamber shown.

[0027] Figure 2b yes Figure 2a A partial enlarged view of .

[0028] Figure 3 It is a structural schematic diagram of the front side of the quartz plate provided by the present invention.

[0029] Figure 4 It is a structural schematic diagram of the back side of the quartz plate provided by the present invention.

[0030] Figure 5 This is a schematic diagram of the layout structure of the air inlet on the reflector currently used.

[0031] Description of reference numerals in the accompanying drawings: 1. Wafer; 2. Transparent diversion buffer plate; 201. Ejector hole; 202. Air hole; 203. First gas channel; 204. Second gas channel; 205. Third gas channel; 206. Connecting channel; 3. Reflection plate; 301. Air inlet; 4. Chamber bottom; 5. Equipment body; 6. Air inlet pipe; 7. Wafer support; 8. Ejector. DETAILED DESCRIPTION

[0032] In order to make the purpose, technical solution and advantages of the present invention clearer, the technical solution of the present invention will be clearly and completely described below in conjunction with the drawings of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0033] It should also be noted that, for ease of description, only the parts related to the invention are shown in the drawings. In the absence of conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0034] It should be noted that the concepts such as "first" and "second" mentioned in the present invention are only used to distinguish different devices, modules or units, and are not used to limit the order or interdependence of the functions performed by these devices, modules or units.

[0035] It should be noted that the modifications of "one" and "plurality" mentioned in the present invention are illustrative rather than restrictive, and those skilled in the art should understand that, unless otherwise clearly indicated in the context, it should be understood as "one or more".

[0036] The present invention belongs to the field of semiconductor equipment technology, and specifically relates to a novel back-helium air intake device and its application method. Back-helium cooling is a commonly used cooling method, and its basic principle is to quickly reduce the temperature of the wafer by introducing helium gas on the back of the wafer. Among them, within a certain range, the higher the flow rate of the introduced helium gas, the faster the wafer cooling speed, but too fast a helium flow rate may cause the wafer to be blown off course and cause the problem of wafer skipping. Due to the existence of this contradiction, it is difficult to further increase the wafer cooling speed. The purpose of the present invention is to solve the problems in the existing back-helium cooling technology that the wafer may be blown off course, the wafer cooling rate is difficult to further increase, and particulate pollution will occur. The present invention improves the structure and design by adding a quartz plate structure with through holes between the reflector and the wafer, thereby effectively reducing the flow rate on the back side of the wafer and avoiding the wafer being blown off-center and scrapped; at the same time, the technical problem of the prior art that helium gas blows on the hardware surface in the chamber, resulting in the generation of particles, effectively preventing the generation of particles, reducing the erosion of key parts and extending their service life; and, the problem of uneven distribution of process gas in the prior art is solved, and sufficient through holes and pipelines are designed for communication to ensure uniform distribution of process gas and accelerate the cooling rate, thereby improving the adjustability of back helium in processes such as rapid thermal annealing and improving energy utilization efficiency.

[0037] See also Figures 1 to 4 The present invention provides a novel back-helium gas intake device. The semiconductor device has a device body 5 (Chamber body) and a chamber, etc. The novel back-helium gas intake device is arranged in the chamber of the semiconductor device. The chamber of the semiconductor device has a reflector 3, and a wafer support 7 is arranged around the reflector 3. The wafer support 7 is, for example, annular or distributed in an annular shape. The upper part of the wafer support 7 supports the wafer 1, and the edge of the wafer 1 contacts the wafer support 7. The wafer 1 is located above the reflector 3, and the reflector 3 is provided with an inlet 301 for introducing helium gas.

[0038] The novel back-helium intake device includes a light-transmitting diverter buffer plate 2, which is arranged above the reflective plate 3 and below the wafer 1, and there is a gap between the top of the light-transmitting diverter buffer plate 2 and the wafer 1, and they are not in direct contact. The light-transmitting diverter buffer plate 2 is in close contact with the reflective plate 3. The light-transmitting diverter buffer plate 2 and the reflective plate 3 are, for example, sealedly connected. The light-transmitting diverter buffer plate 2 is provided with a plurality of air holes 202 that pass through from top to bottom in a range corresponding to the wafer 1; a groove is provided on the bottom surface of the light-transmitting diverter buffer plate 2 to form a gas channel connecting the air holes 202 for transmitting gas. The gas channel is connected to the air inlet 6 through the air inlet 301. In other words, the external helium source is sealed and connected to the equipment chamber through the air inlet 6. The air inlet 6 is aligned and connected to the air inlet 301 of the reflector 3. The air inlet 301 is aligned and connected to the gas channel, so that helium can enter through the air inlet 6 and finally output toward the back of the wafer 1 through the air hole 202. The light-transmitting diversion buffer plate 2 of the present invention is made of a material with high light transmittance, so that it will not affect the function of the reflector 3, and can better protect the reflector 3 and the probe at the reflector 3, etc., extend the PM cycle, and improve the stability of the process.

[0039] More specifically, for example Figure 4 As shown, all the pores 202 are located in the gas channel, in other words, the pores 202 are located at the bottom of the groove of the gas channel, and the pores 202 are located on the line of the gas channel when viewed from top or bottom. This structure can better achieve the effect of filling the gas channel with helium first and then flowing out of the pores 202 more evenly, and the structure is neat and easy to produce. It is understandable that in other embodiments, the pores 202 can be selected not to be directly opposite the middle of the gas channel, but to one side or to the side of the gas channel. As long as the pores 202 are connected to the gas channel, a basic flow diversion buffering effect can be achieved.

[0040] In a preferred embodiment, further, the gas channel includes a plurality of concentric annular grooves, and all the concentric annular grooves are connected by a connecting channel 206. The light-transmitting diverter buffer plate 2, the air hole 202, and the gas channel are all generally circular in shape, corresponding to the circular wafer 1. More specifically, for example, there are three concentric annular grooves, namely the first gas channel 203, the second gas channel 204, and the third gas channel 205, and the diameters of the first gas channel 203, the second gas channel 204, and the third gas channel 205 decrease successively. The first gas channel 203 and the second gas channel 204, as well as the second gas channel 204 and the third gas channel 205, are connected by a connecting channel 206, and the connecting channel 206 is a straight segment-shaped groove. The present invention can make the gas distribution more uniform by designing the light-transmitting diverter buffer plate 2 into a pipeline form, thereby avoiding the problem of uneven gas distribution when cooling the wafer. By adding the light-transmitting diversion buffer plate 2 structure and designing enough through holes on the light-transmitting diversion buffer plate 2, the flow rate on the back side of the wafer is effectively reduced, the generation of particles can be effectively reduced, and the service life of key parts is extended.

[0041] More specifically, the first gas channel 203 is located at the outermost side of the gas channel, and 24 pores 202 are evenly distributed in the first gas channel 203. The second gas channel 204 is located between the first gas channel 203 and the third gas channel 205, and 16 pores 202 are evenly distributed in the second gas channel 204. The third gas channel 205 is located at the innermost side of the gas channel, and 8 pores 202 are evenly distributed in the third gas channel 205. In this way, a total of 48 pores are provided. And preferably, the two connecting channels 206 between the three concentric annular grooves are directly adjacent and connected, and the position of the pores 202 does not fall at the intersection or corner of the gas channel. When a large flow of helium is blown into the chamber from the inlet pipe 6, it enters the light-transmitting diversion buffer plate 2 through the three through holes on the reflector 3 (for example, the helium first enters the position close to the connecting channel 206), and the helium is conducted in the three-circle groove channel of the light-transmitting diversion buffer plate 2, and then flows from the through holes on the light-transmitting diversion buffer plate 2 to the back of the wafer 1 to cool the wafer 1. This solves the risk of large flow of helium blowing the wafer off-center, and at the same time, the process window of T-50 can be further expanded by increasing the helium flow rate, which improves the adjustability of the back helium of rapid thermal annealing.

[0042] It should be noted that a light source is usually used as a heating source in the chamber of a semiconductor device for a rapid thermal processing (RTP) process. The heating source is located above the wafer 1 to heat the wafer 1, and the reflector 3 is used to focus the energy of the heating source to a specific area. This design and optimization is crucial to the success of the process because it ensures that the surface of the wafer 1 is heated evenly, thereby achieving changes in the material structure and properties such as rapid crystallization and rapid alloying. Therefore, the reflector plays a role in focusing and evenly distributing the heat source in the RTP process, which can improve the heating efficiency and ensure that the wafer can reach the required temperature and heat treatment effect during the rapid heating and cooling process.

[0043] See also Figure 5 (Only 12 air inlets are shown, and there are actually through holes for ejector pins and probes, etc.), the currently used reflector 3' has 12 currently used air inlets 301', the back side of the reflector has an air path (specifically, it can be in the form of a channel or a hollow cavity, etc.), and the air inlet pipe 6 is connected to the back side of the reflector, so that one air inlet pipe 6 can correspond to 12 holes, which is equivalent to dividing the air intake into 12 parts. Since the wafer in the device can be rotated (for uniform heating), and in order to make the back air path simpler, multiple air inlets can be arranged linearly; furthermore, the air inlet 301 is generally selected to be eccentric in the diameter direction. In other words, the connecting line of the 12 air inlets 301 is close to the radius of the circular reflector, but has a certain deflection angle relative to the radius, thus forming an eccentric setting. The 12 air inlet scheme currently adopted is to ensure uniform distribution of process gas (such as helium), but it is found through actual application that 12 holes are not enough to ensure uniformity, and because there are 12 or more holes on the reflector 3, the emissivity and reflection efficiency of the reflector 3 are affected, thereby affecting the temperature uniformity.

[0044] In the present invention, preferably, the number of the air inlets 301 is not more than three. More specifically, for example, the positions of the air inlets 301 correspond to Figure 5 3 points among the 12 holes; preferably, the 3 points correspond to the first gas channel 203, the second gas channel 204 and the third gas channel 205, respectively. The present invention separately sets the above-mentioned light-transmitting diverter buffer plate 2, so that more holes and channels can be set to make the helium gas pass more evenly, and the reflector 3 no longer needs more holes, which can reduce the cost of the reflector and ensure that the function of the reflector is not affected. In addition, the air inlet position in the reflector 3 needs to be offset, mainly to solve the problem of uneven temperature caused by the edge effect and to optimize the cooling effect of the airflow. This air inlet offset setting is an industry standard and should not be changed. The light-transmitting diverter buffer plate 2 of the present invention also solves the problem of uneven temperature that may be caused by such an offset setting.

[0045] The light-transmitting diverter buffer plate 2 is preferably a quartz plate made of silicon dioxide. The thickness of the light-transmitting diverter buffer plate 2 is about 2 mm (e.g., 2 mm ± 0.5 mm), and the diameter of the air hole 202 can be selected to be about 2 mm (e.g., 2 mm ± 0.5 mm). The diameter of the air inlet 301 is about 1.3 mm (e.g., 1.3 mm ± 0.5 mm), which is smaller than the diameter of the air hole 202. In the present invention, the air holes 202 have a larger aperture, a larger number, and a larger coverage area, so that the gas pressure when a large flow of helium is output to the wafer 1, that is, the impact on the wafer 1 is smaller, so that the wafer 1 will not be blown.

[0046] As a more specific supplementary explanation, the light-transmitting diverter buffer plate 2 is provided with three ejector pin holes 201 for the ejector pin 8 to pass through, and the diameter of the ejector pin hole 201 is 6.65 mm. The reflective plate 3 is also provided with corresponding ejector pin holes, and the ejector pin 8 is vertically arranged upward from the bottom 4 of the chamber. The ejector pin 8 (pin) is generally distributed in a regular triangle, and it can be raised and lowered. When raised, the upper end of the ejector pin 8 extends out of the light-transmitting diverter buffer plate 2 and directly contacts the wafer 1, and can lift the wafer 1 upward; when lowered, the upper end of the ejector pin 8 is lower than the upper surface of the light-transmitting diverter buffer plate 2, and can lower the wafer 1 onto the wafer support 7. The ejector pin hole 201 is located on the outside of the gas channel, corresponding to the position close to the edge of the wafer 1. The specific settings of the ejector pin 8, the wafer support 7, etc. can follow the existing technology, which is not the focus of improvement of the present invention, and will not be elaborated here.

[0047] Based on the above structure of the present invention, the present invention provides an application method of a new back-helium gas intake device, wherein the semiconductor device used has the new back-helium gas intake device described in the present invention, which includes the following steps: helium gas passes through the gas intake pipe 6 and the gas intake port 301 in sequence and then flows into the gas channel of the light-transmitting diversion buffer plate 2, the helium gas is conducted in the gas channel, and then flows to the back side of the wafer 1 through the air hole 202, thereby achieving uniform cooling of the wafer 1.

[0048] In summary, the present invention designs a back-helium intake device, which solves the problems of slow cooling rate of the RTP machine and narrow T-50 debugging window in the prior art; adding a layer of quartz plate structure between the reflector and the wafer can play the effect of diverting the helium, and act as a buffer layer for the helium introduced, which is used to buffer a large flow of helium, and can effectively change and reduce the flow rate on the back side of the wafer, thereby avoiding the situation where the wafer is blown off and skipped and scrapped; in the back-helium intake device, sufficient through holes and intake pipes are designed on the quartz plate to ensure uniform distribution of the process gas. And accelerate the cooling rate, thereby improving the adjustability of the back helium of rapid thermal annealing; the introduction of gas into the chamber will inevitably corrode the coating on the surface of some hardware such as the reflector, which will easily generate particulate matter in the cavity, and will also reduce the life of the hardware such as the reflector. By adding a quartz plate structure for back helium intake, the generation of particulate matter can be effectively prevented, and the erosion of key parts can be reduced, thereby extending its service life; by designing the quartz plate structure, the helium exhaust port on the reflector can be reduced, which can save costs and reduce the impact of the helium port on the emissivity.

[0049] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A novel back-helium intake device, characterized in that: It is arranged in a semiconductor equipment chamber, wherein a reflection plate (3) is provided in the semiconductor equipment chamber, a wafer support (7) is provided around the reflection plate (3), a wafer (1) is supported above the wafer support (7), and the wafer (1) is located above the reflection plate (3); an air inlet (301) is provided on the reflection plate (3); The novel back-helium intake device comprises a light-transmitting diverter buffer plate (2), which is arranged above a reflector plate (3) and below a wafer (1), and a gap is provided between the top of the light-transmitting diverter buffer plate (2) and the wafer (1); the light-transmitting diverter buffer plate (2) is provided with a plurality of vertically penetrating air holes (202) distributed within a range corresponding to the wafer (1); a groove is provided on the bottom surface of the light-transmitting diverter buffer plate (2) to form a gas channel connecting the air holes (202); and the gas channel is connected to the air intake pipe (6) through an air inlet (301).

2. The novel back-helium intake device according to claim 1 is characterized in that: All the air holes (202) are located in the gas channel.

3. The novel back-helium intake device according to claim 2 is characterized in that: The gas channel comprises a plurality of concentric annular grooves, and all the concentric annular grooves are connected via a connecting channel (206).

4. The novel back-helium intake device according to claim 3 is characterized in that: There are three concentric annular grooves, namely a first gas channel (203), a second gas channel (204) and a third gas channel (205), and the diameters of the first gas channel (203), the second gas channel (204) and the third gas channel (205) decrease successively; the first gas channel (203) and the second gas channel (204), as well as the second gas channel (204) and the third gas channel (205) are connected via a connecting channel (206), and the connecting channel (206) is a straight segment-shaped groove.

5. The novel back-helium intake device according to claim 4 is characterized in that: The first gas channel (203) is located at the outermost side of the gas channel, and 24 gas holes (202) are evenly distributed in the first gas channel (203); the second gas channel (204) is located between the first gas channel (203) and the third gas channel (205), and 16 gas holes (202) are evenly distributed in the second gas channel (204); and the third gas channel (205) is located at the innermost side of the gas channel, and 8 gas holes (202) are evenly distributed in the third gas channel (205).

6. The novel back-helium intake device according to claim 4 is characterized in that: The back side or the interior of the reflector plate (3) has an air path for connecting all the air inlets (301); the number of the air inlets (301) is no more than three, and / or the positions of the three air inlets (301) correspond to the first gas channel (203), the second gas channel (204), and the third gas channel (205), respectively.

7. The novel back-helium intake device according to any one of claims 1 to 6, characterized in that: The light-transmitting diversion buffer plate (2) is a quartz plate.

8. The novel back-helium intake device according to any one of claims 1 to 6, characterized in that: The thickness of the light-transmitting diversion buffer plate (2) is 2 mm±0.5 mm, and the diameter of the air hole (202) is 2 mm±0.5 mm; and / or the diameter of the air inlet (301) is smaller than the diameter of the air hole (202).

9. The novel back-helium intake device according to any one of claims 1 to 6, characterized in that: The light-transmitting splitting buffer plate (2) is provided with three ejector holes (201) for ejector pins (8) to pass through, and the ejector holes (201) are located outside the gas channel.

10. An application method of a novel back-helium intake device, characterized in that: The semiconductor device used therein has a novel back-helium intake device according to any one of claims 1 to 9, which comprises the following steps: The helium gas flows into the gas channel of the light-transmitting diversion buffer plate (2) after passing through the gas inlet pipe (6) and the gas inlet port (301) in sequence. The helium gas is conducted in the gas channel and then flows to the back side of the wafer (1) through the air holes (202), thereby achieving uniform cooling of the wafer (1).

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