Semiconductor and perovskite combined heterojunction radiation detector and preparation method thereof

Abstract

The invention relates to a semiconductor and perovskite combined heterojunction radiation detector and a preparation method thereof, and belongs to the technical field of radiation detectors. The heterojunction radiation detector comprises an n-type semiconductor electron transport layer. The n-type side ohmic electrode is fixed on one side of the n-type semiconductor electron transport layer; the intrinsic perovskite absorption layer is fixed on the other side of the n-type semiconductor electron transport layer; the p-type oxide hole transport layer is fixed on one side, far away from the n-type semiconductor electron transport layer, of the intrinsic perovskite absorption layer; and the p-type side ohmic electrode is fixed on one side, far away from the intrinsic perovskite absorption layer, of the p-type oxide hole transport layer. According to the heterojunction radiation detector, the strong absorption capacity of a perovskite material to high-energy rays, the stability of a traditional semiconductor serving as a charge transport layer and the separation effect of a heterojunction built-in electric field to electron-hole pairs are integrated, and the heterojunction radiation detector has high sensitivity, high energy resolution, high stability and portability.

Description

Technical Field

[0001] The present invention belongs to the technical field of radiation detectors, and in particular relates to a semiconductor-perovskite heterojunction radiation detector and a preparation method thereof. Background Art

[0002] The current application requirements for high-energy particle detectors are two-fold: high sensitivity and high stability.

[0003] In the existing technology, semiconductor materials have obvious advantages of high stability and play an important role in the field of radiation detection. However, facing high-energy radiation, the low atomic number of traditional semiconductors becomes the main inhibitory factor of their high sensitivity.

[0004] Perovskite materials have high atomic numbers, and studies have proven their high sensitivity in radiation detection. However, the poor stability of perovskite materials is the main bottleneck that inhibits their application.

[0005] Therefore, how to simultaneously achieve high sensitivity and high stability of high-energy particle detectors is a technical problem that urgently needs to be solved in this field. Summary of the invention

[0006] In view of this, the present invention proposes a semiconductor combined with perovskite heterojunction radiation detector and a preparation method thereof. The preparation method uses traditional semiconductors as charge transport layers and hole transport layers to avoid the stability problems caused by the large amount of ion transport in perovskite. The prepared detector has both high sensitivity and high stability.

[0007] The technical solution adopted by the present invention to solve the above-mentioned technical problems is as follows.

[0008] In a first aspect, the present invention provides a semiconductor-perovskite heterojunction radiation detector, comprising:

[0009] n-type semiconductor electron transport layer;

[0010] An n-type side ohmic electrode fixed to one side of the n-type semiconductor electron transport layer;

[0011] An intrinsic perovskite absorption layer is fixed on the other side of the n-type semiconductor electron transport layer;

[0012] A p-type oxide hole transport layer is fixed on the side of the intrinsic perovskite absorption layer away from the n-type semiconductor electron transport layer;

[0013] The p-type ohmic electrode is fixed on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

[0014] In a second aspect, the present invention provides another semiconductor-perovskite heterojunction radiation detector, comprising:

[0015] A substrate, wherein the substrate is a non-conductive material;

[0016] An n-type semiconductor electron transport layer fixed to one side of the substrate;

[0017] n-type side ohmic electrode;

[0018] An intrinsic perovskite absorption layer, an n-type side ohmic electrode and the intrinsic perovskite absorption layer are fixed to a side of the n-type semiconductor electron transport layer away from the substrate, and the n-type side ohmic electrode and the intrinsic perovskite absorption layer are not in contact;

[0019] A p-type oxide hole transport layer is fixed on a side of the intrinsic perovskite absorption layer away from the n-type semiconductor electron transport layer;

[0020] The p-type ohmic electrode is fixed on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

[0021] Preferably, the material of the intrinsic perovskite absorption layer includes MAPbI 3 , FAPbI 3 MAPbBr 3 Any of .

[0022] Preferably, the intrinsic perovskite absorption layer has a thickness of 100 nm to 10 mm.

[0023] Preferably, the material of the p-type oxide hole transport layer is oxide; more preferably, the oxide is magnesium oxide.

[0024] Preferably, the n-type semiconductor electron transport layer includes any one of n-type silicon carbide, n-type gallium nitride, and n-type silicon.

[0025] Preferably, the material of the n-type side ohmic electrode includes any one of Ti, Ni and Al.

[0026] Preferably, the material of the p-type side ohmic electrode includes any one of Ti, Ni and Al.

[0027] Preferably, the non-conductive material is sapphire.

[0028] In a third aspect, the present invention also provides a method for preparing the above-mentioned semiconductor-perovskite heterojunction radiation detector, comprising the following steps:

[0029] Prepare an n-type side ohmic electrode on one side of the n-type electron transport layer;

[0030] preparing an intrinsic perovskite absorption layer on the other side of the n-type electron transport layer;

[0031] Preparing a p-type oxide hole transport layer on a side of the intrinsic perovskite absorption layer away from the n-type electron transport layer;

[0032] A p-type side ohmic electrode is prepared on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

[0033] In a fourth aspect, the present invention further provides a method for preparing the above-mentioned another semiconductor-bonded perovskite heterojunction radiation detector, comprising the following steps:

[0034] preparing an n-type electron transport layer on one side of the substrate;

[0035] An n-type side ohmic electrode and an intrinsic perovskite absorption layer are successively prepared on a side of the n-type electron transport layer away from the substrate, and the n-type side ohmic electrode and the intrinsic perovskite absorption layer are not in contact;

[0036] Preparing a p-type oxide hole transport layer on a side of the intrinsic perovskite absorption layer away from the n-type electron transport layer;

[0037] A p-type side ohmic electrode is prepared on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

[0038] Preferably, the p-type oxide hole transport layer is prepared by magnetron sputtering, more preferably, by magnetron sputtering at 25°C-100°C.

[0039] Preferably, the n-type side ohmic electrode is annealed at 500-1100°C.

[0040] Preferably, in the second method, both the n-type side ohmic electrode and the p-type side ohmic electrode are patterned by photolithography.

[0041] Compared with the prior art, the present invention has the following beneficial effects:

[0042] The method for preparing a semiconductor-combined perovskite heterojunction radiation detector of the present invention adopts perovskite material as an absorption layer, and utilizes its high atomic number to strongly block high-energy rays to improve the high-energy ray detection efficiency; adopts traditional semiconductors as hole transport layers and electron transport layers to avoid the influence of ion migration on the stability of perovskite, thereby improving the stability; adopts a magnetron sputtering method to prepare an oxide semiconductor as a hole transport layer placed above an intrinsic perovskite layer absorption source layer, thereby avoiding the damage to the perovskite material in the process of preparing the p-type hole transport layer by other preparation methods.

[0043] The semiconductor-perovskite heterojunction radiation detector of the present invention combines the strong absorption ability of perovskite materials for high-energy rays, the stability of traditional semiconductors as charge transport layers, and the separation effect of the built-in electric field of the heterojunction on electron-hole pairs, and has high sensitivity, high energy resolution, high stability and portability. BRIEF DESCRIPTION OF THE DRAWINGS

[0044] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0045] Figure 1 A schematic diagram of the structure of a semiconductor-perovskite heterojunction radiation detector according to one embodiment of the present invention;

[0046] Figure 2 A schematic structural diagram of a semiconductor-perovskite heterojunction radiation detector according to another embodiment of the present invention;

[0047] In the figure, 1. n-type side ohmic electrode, 2. n-type semiconductor electron transport layer, 3. intrinsic perovskite absorption layer, 4. p-type oxide hole transport layer, 5. p-type side ohmic electrode, 6. substrate. DETAILED DESCRIPTION

[0048] Embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions.

[0049] The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and should not be construed as limiting the present application. Specific implementation method 1

[0051] like Figure 1 As shown, the semiconductor-perovskite heterojunction radiation detector of the present invention comprises:

[0052] n-type semiconductor electron transport layer 2;

[0053] An n-type side ohmic electrode 1 is fixed to the lower surface of the n-type semiconductor electron transport layer 2;

[0054] The intrinsic perovskite absorption layer 3 is fixed on the upper surface of the n-type semiconductor electron transport layer 2;

[0055] A p-type oxide hole transport layer 4 is fixed on the upper surface of the intrinsic perovskite absorption layer 3;

[0056] The p-type ohmic electrode 5 is fixed to the upper surface of the p-type oxide hole transport layer 4 .

[0057] It should be noted that the intrinsic perovskite absorption layer 3 can be made of MAPbI 3 , FAPbI 3 MAPbBr 3 For perovskite series materials, the thickness needs to be set according to the type of high-energy rays detected. For example, the thickness of low-energy X-rays can be set at 100nm-1mm, and if it is Gamma rays, the thickness can be set to more than 1mm.

[0058] It should be noted that the p-type oxide hole transport layer 4 can be made of an oxide semiconductor material that can be prepared by a low-temperature, non-destructive method of magnetron sputtering to avoid damage to the intrinsic perovskite absorption layer 3 during the preparation of the p-type oxide hole transport layer 4. In some embodiments, the p-type oxide hole transport layer 4 can be made of magnesium oxide.

[0059] It should be noted that the material of the n-type semiconductor electron transport layer 2 can be any one of n-type silicon carbide, n-type gallium nitride, and n-type silicon.

[0060] It should be noted that the material of the n-type side ohmic electrode includes any one of Ti, Ni, and Al; the material of the p-type side ohmic electrode includes any one of Ti, Ni, and Al.

[0061] The method for preparing the semiconductor-perovskite heterojunction radiation detector of the present invention comprises the following steps:

[0062] An n-type side ohmic electrode 1 is prepared on the lower surface of the n-type electron transport layer 2, and then annealed at 500-1000°C;

[0063] Prepare an intrinsic perovskite absorption layer 3 on the upper surface of the n-type electron transport layer 2;

[0064] To prepare a p-type oxide hole transport layer 4 on the upper surface of the intrinsic perovskite absorption layer 3, a low-temperature and lossless preparation process such as magnetron sputtering needs to be selected;

[0065] A p-type side ohmic electrode 5 is prepared on the upper surface of the p-type oxide hole transport layer 4 . Specific implementation method 2

[0067] like Figure 2 As shown, the semiconductor-perovskite heterojunction radiation detector of the present invention comprises:

[0068] Substrate 6, which is a non-conductive material, such as a sapphire substrate;

[0069] An n-type semiconductor electron transport layer 2 is fixed to the upper surface of a substrate 6;

[0070] n-type side ohmic electrode 1;

[0071] The intrinsic perovskite absorption layer 3, the n-type side ohmic electrode 1 and the intrinsic perovskite absorption layer 3 are all fixed on the upper surface of the n-type semiconductor electron transport layer 2, and the two are not in contact;

[0072] A p-type oxide hole transport layer 4 is fixed on the upper surface of the intrinsic perovskite absorption layer 3;

[0073] The p-type ohmic electrode 5 is fixed to the upper surface of the p-type oxide hole transport layer 4 .

[0074] It should be noted that the intrinsic perovskite absorption layer 3 can be made of MAPbI 3 , FAPbI 3 MAPbBr 3 For perovskite series materials, the thickness needs to be set according to the type of high-energy rays detected. For example, the thickness of low-energy X-rays can be set at 100nm-1mm, and if it is Gamma rays, the thickness can be set to more than 1mm.

[0075] It should be noted that the p-type oxide hole transport layer 4 can be made of an oxide semiconductor material that can be prepared by a low-temperature, non-destructive method of magnetron sputtering to avoid damage to the intrinsic perovskite absorption layer 3 during the preparation of the p-type oxide hole transport layer 4. In some embodiments, the p-type oxide hole transport layer 4 can be made of magnesium oxide.

[0076] It should be noted that the material of the n-type side ohmic electrode includes any one of Ti, Ni, and Al; the material of the p-type side ohmic electrode includes any one of Ti, Ni, and Al.

[0077] The method for preparing the semiconductor-perovskite heterojunction radiation detector of the present invention comprises the following steps:

[0078] Prepare an n-type electron transport layer 2 on the upper surface of the substrate 6;

[0079] An n-type side ohmic electrode 1 is prepared on the upper surface of the n-type electron transport layer 2. The electrode needs to be patterned by photolithography and other processes to distinguish it from the subsequent intrinsic perovskite absorption layer 3 in terms of spatial position. The n-type side ohmic electrode is then annealed at 1500-1000°C.

[0080] An intrinsic perovskite absorption layer 3 is prepared in a region on the upper surface of the n-type electron transport layer 2 where there is no n-type electron transport layer 2;

[0081] To prepare a p-type oxide hole transport layer 4 on the upper surface of the intrinsic perovskite absorption layer 3, a low-temperature and non-destructive preparation process such as magnetron sputtering needs to be selected;

[0082] A p-type side ohmic electrode 5 is prepared on the upper surface of the p-type oxide hole transport layer 4 .

[0083] It should be noted that there is no particular limitation on the patterning of the n-type side ohmic electrode 1 and the p-type side ohmic electrode 5 , and they can be selected according to needs.

[0084] The above description is only a partial implementation method of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications should also be regarded as the scope of protection of the present application.

Claims

1. A semiconductor-perovskite heterojunction radiation detector, characterized in that: include: n-type semiconductor electron transport layer; An n-type side ohmic electrode fixed to one side of the n-type semiconductor electron transport layer; An intrinsic perovskite absorption layer is fixed on the other side of the n-type semiconductor electron transport layer; A p-type oxide hole transport layer is fixed on a side of the intrinsic perovskite absorption layer away from the n-type semiconductor electron transport layer; The p-type ohmic electrode is fixed on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

2. A semiconductor-perovskite heterojunction radiation detector, characterized in that: include: A substrate, wherein the substrate is a non-conductive material; An n-type semiconductor electron transport layer fixed to one side of the substrate; n-type side ohmic electrode; An intrinsic perovskite absorption layer, an n-type side ohmic electrode and the intrinsic perovskite absorption layer are fixed to a side of the n-type semiconductor electron transport layer away from the substrate, and the n-type side ohmic electrode and the intrinsic perovskite absorption layer are not in contact; A p-type oxide hole transport layer is fixed to a side of the intrinsic perovskite absorption layer away from the n-type semiconductor electron transport layer; The p-type ohmic electrode is fixed on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

3. The semiconductor-perovskite heterojunction radiation detector according to claim 1 or 2, characterized in that: The material of the intrinsic perovskite absorption layer includes any one of MAPbI3, FAPbI3, and MAPbBr3.

4. The semiconductor-perovskite heterojunction radiation detector according to claim 1 or 2, characterized in that: The thickness of the intrinsic perovskite absorption layer is 100nm-10mm.

5. The semiconductor-perovskite heterojunction radiation detector according to claim 1 or 2, characterized in that: The material of the p-type oxide hole transport layer is oxide.

6. The semiconductor-perovskite heterojunction radiation detector according to claim 1 or 2, characterized in that: The n-type semiconductor electron transport layer includes any one of n-type silicon carbide, n-type gallium nitride, and n-type silicon.

7. The semiconductor-perovskite heterojunction radiation detector according to claim 1 or 2, characterized in that: The materials of the n-type side ohmic electrode and the p-type side ohmic electrode are independently any one of Ti, Ni and Al.

8. The method for preparing a semiconductor-perovskite heterojunction radiation detector according to claim 1, characterized in that: Prepare an n-type side ohmic electrode on one side of the n-type electron transport layer; preparing an intrinsic perovskite absorption layer on the other side of the n-type electron transport layer; Preparing a p-type oxide hole transport layer on a side of the intrinsic perovskite absorption layer away from the n-type electron transport layer; A p-type side ohmic electrode is prepared on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

9. The method for preparing a semiconductor-perovskite heterojunction radiation detector according to claim 2, characterized in that: preparing an n-type electron transport layer on one side of the substrate; An n-type side ohmic electrode and an intrinsic perovskite absorption layer are successively prepared on a side of the n-type electron transport layer away from the substrate, and the n-type side ohmic electrode and the intrinsic perovskite absorption layer are not in contact; Preparing a p-type oxide hole transport layer on a side of the intrinsic perovskite absorption layer away from the n-type electron transport layer; A p-type side ohmic electrode is prepared on a side of the p-type oxide hole transport layer away from the intrinsic perovskite absorption layer.

10. The method for preparing a semiconductor-perovskite heterojunction radiation detector according to claim 8 or 9, characterized in that: The p-type oxide hole transport layer is prepared by a magnetron sputtering process at 25°C-100°C; Annealing the n-type ohmic electrode at 500-1000°C; The n-type side ohmic electrode and the p-type side ohmic electrode are both patterned by photolithography.

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