Method and equipment for detecting ion migration of perovskite solar cell

Abstract

The invention provides a method and equipment for detecting ion migration of a perovskite solar cell, and relates to the technical field of perovskite solar cells, and the method comprises the steps: obtaining a fluorine-doped tin oxide coating glass substrate, and carrying out the spin coating of a SnO2 colloidal solution on the glass substrate, so as to obtain an electron transport layer; preparing perovskite solutions of different components according to a preset precursor solution formula, spin-coating the electron transport layer with the perovskite solutions, and performing annealing treatment to obtain perovskite thin films of different components; coating a Spiro-OMeTAD solution on the perovskite thin film so as to obtain a hole transport layer; depositing a gold electrode on the hole transport layer to obtain a solar cell device; different illumination conditions and different working load conditions are simulated, the solar cell device is operated, and the relation between the interface ion cumulant and the load is evaluated. The problems of unstable performance, current and voltage lagging and the like caused by ion migration of the existing titanium ore solar cell under the actual working condition are solved.

Description

Technical Field

[0001] The present invention relates to the technical field of perovskite solar cells, and in particular to a method and device for detecting ion migration of a perovskite solar cell. Background Art

[0002] In recent years, organic-inorganic hybrid metal halide perovskite solar cells (PSCs) have attracted widespread attention due to their efficient photoelectric conversion capabilities. Perovskite materials have excellent photoelectric properties, such as long carrier lifetime and low defect density, making them the focus of research. However, the ion migration phenomenon seriously affects the stability of PSCs under external stress such as light, heat or electric field, limiting their practical application.

[0003] Ion migration refers to the redistribution and movement of ions inside a device due to external influences under operating conditions, resulting in current-voltage (JV) hysteresis and unstable power output; existing studies have mainly focused on open-circuit and short-circuit conditions, which do not represent the dynamic environment experienced by the device in actual operation; although some methods, such as photoluminescence microscopy and electrochemical impedance spectroscopy, have been used to study ion migration, it is still difficult to reveal the mechanism of ion migration under actual operating conditions due to the complex interactions between carriers and ions and the wide time domain (from sub-nanoseconds to seconds).

[0004] However, the existing technology also has many defects. For example, design defects make the device prone to voltage overshoot under high load, material defects may lead to reduced photoelectric performance, and process defects in the manufacturing process may introduce non-uniformity, thereby affecting the reliability and stability of the device. In practical applications, it affects the performance and life of PSCs, which urgently needs further research and optimization. Summary of the invention

[0005] The present invention provides a method and device for detecting ion migration of a perovskite solar cell, which solves the problems of unstable performance and current-voltage hysteresis caused by ion migration of existing organic-inorganic hybrid metal halide perovskite solar cells under actual working conditions.

[0006] In order to solve the above technical problems, the technical solution of the present invention is as follows:

[0007] In a first aspect, a method for detecting ion migration of a perovskite solar cell is provided, the method comprising:

[0008] Obtaining a fluorine-doped tin oxide coated glass substrate and cleaning it to obtain a cleaned glass substrate;

[0009] Spin coating SnO2 colloidal solution on the cleaned glass substrate and performing annealing treatment to obtain an electron transport layer;

[0010] Preparing perovskite solutions of different compositions according to a preset precursor solution formula, spin-coating the perovskite solution on the electron transport layer and performing annealing treatment to obtain perovskite films of different compositions;

[0011] Coating a Spiro-OMeTAD solution on the perovskite film to obtain a hole transport layer;

[0012] depositing a gold electrode on the hole transport layer to obtain a solar cell device;

[0013] Connecting the solar cell device with a CMOS switch, a digital oscilloscope, an adjustable laser exciter, and a variable resistor to obtain a VL-TPT measurement system;

[0014] According to the VL-TPT measurement system, different illumination conditions and different working load conditions are simulated, the solar cell device is operated, and the photo-generated voltage and current-voltage characteristic data are recorded using a digital oscilloscope to obtain the VL-TPT curve;

[0015] The key parameter values ​​of the VL-TPT curves were extracted and their relationships were analyzed to evaluate the relationship between the interfacial ion accumulation and the loading.

[0016] Further, obtaining a fluorine-doped tin oxide coated glass substrate and cleaning it to obtain a cleaned glass substrate comprises:

[0017] preparing a fluorine-doped tin oxide-coated glass substrate;

[0018] The glass substrate is cleaned by using an ultrasonic cleaning tank with an aqueous detergent solution, deionized water, acetone and ethanol, and the glass substrate is subjected to ultraviolet-ozone plasma to obtain a cleaned glass substrate.

[0019] Further, a SnO2 colloidal solution is spin-coated on the cleaned glass substrate and annealed to obtain an electron transport layer, including:

[0020] Obtain a SnO2 colloid stock solution, and dilute it with water at a ratio of 1:5 to obtain a diluted SnO2 colloid solution;

[0021] The diluted SnO2 colloidal solution was spin-coated on the cleaned glass substrate using a pipette to obtain a SnO2 thin film;

[0022] After the spin coating is completed, the cleaned glass substrate coated with the SnO2 film is annealed in an annealing device to obtain an electron transport layer.

[0023] Further, a perovskite solution of different compositions is prepared according to a preset precursor solution formula, the perovskite solution is spin-coated on the electron transport layer and annealed to obtain a perovskite film of different compositions, including:

[0024] According to the preset precursor solution formula, perovskite solutions with different compositions are prepared respectively;

[0025] Spin coating the perovskite solution on the electron transport layer and using an anti-solvent to assist film formation to obtain a perovskite film;

[0026] The perovskite film is annealed to obtain an annealed perovskite film.

[0027] Further, a Spiro-OMeTAD solution is coated on the perovskite film to obtain a hole transport layer, comprising:

[0028] Weigh 72.3 mg of Spiro-OMeTAD powder;

[0029] The weighed Spiro-OMeTAD powder was dissolved in 1 mL of chlorobenzene solvent to obtain a first solution;

[0030] Weigh 520 mg of Li-TFSI and dissolve it in 1 mL of acetonitrile solvent to obtain a Li-TFSI solution;

[0031] Weigh 300 mg of cobalt (III) FK209 and dissolve it in 1 mL of acetonitrile solvent to obtain a cobalt (III) FK209 solution;

[0032] 17.5 μL of Li-TFSI solution, 28.8 μL of cobalt (III) FK209 solution, and 28.8 μL of 4-tert-butylpyridine were added to the first solution to obtain a Spiro-OMeTAD solution;

[0033] The Spiro-OMeTAD solution was spin-coated on the perovskite film to obtain a hole transport layer.

[0034] Further, a gold electrode is deposited on the hole transport layer to obtain a solar cell device, comprising:

[0035] Place the prepared gold electrode into the thermal evaporation source;

[0036] Use a vacuum system to extract the gas in the deposition chamber;

[0037] The thermal evaporation source is heated to make the gold electrode reach the evaporation temperature;

[0038] When the gold electrode begins to evaporate, the evaporated gold atoms are deposited on the hole transport layer to obtain a solar cell device.

[0039] Further, the solar cell device is connected with a CMOS switch, a digital oscilloscope, an adjustable laser exciter and a variable resistor to obtain a VL-TPT measurement system, including:

[0040] Connect the positive and negative electrodes of the constructed solar cell device to the corresponding ports of the VL-TPT measurement system respectively;

[0041] Connect the input of the CMOS switch to a channel of a digital oscilloscope;

[0042] The output end of the CMOS switch is connected to the solar cell device to control the switching between the "open circuit" and "short circuit" states of the circuit;

[0043] directing the output beam of the adjustable laser exciter toward the active region of the solar cell device;

[0044] A variable resistor is connected in series in the circuit of the solar cell device.

[0045] In a second aspect, a device for detecting ion migration of a perovskite solar cell comprises:

[0046] Solar cell devices, laser exciters, CMOS switches, digital oscilloscopes;

[0047] The solar cell device is connected to the CMOS switch through a wire, and the CMOS switch is connected in parallel with the digital oscilloscope;

[0048] The laser exciter is connected to the solar cell device via optical fiber.

[0049] According to a third aspect, a computing device includes:

[0050] one or more processors;

[0051] The storage device is used to store one or more programs. When the one or more programs are executed by the one or more processors, the one or more processors implement the above method.

[0052] In a fourth aspect, a computer-readable storage medium stores a program, and the program implements the above method when executed by a processor.

[0053] The above solution of the present invention includes at least the following beneficial effects:

[0054] The above scheme of the present invention utilizes variable load transient photoelectric technology (VL-TPT) to monitor the ion dynamics in perovskite materials in real time, especially the ion migration behavior under illumination and switching states; by real-time detection of ion migration in perovskite devices, its performance under actual working conditions can be accurately evaluated, providing a basis for optimized design; the application of this technology can reduce testing and evaluation costs, improve the market competitiveness of perovskite solar cells, and increase sales; by improving the stability and efficiency of solar cells, it is helpful to promote the development of renewable energy and improve environmental quality; it realizes dynamic monitoring of perovskite materials under actual working conditions, improves the understanding of ion migration mechanism, provides new ideas for the future development of perovskite materials, promotes the research progress of perovskite solar cells, and may give birth to new products and new market opportunities. BRIEF DESCRIPTION OF THE DRAWINGS

[0055] Figure 1 It is a schematic flow chart of a method for detecting ion migration of a perovskite solar cell provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0056] The exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present disclosure are shown in the accompanying drawings, it should be understood that the present disclosure can be implemented in various forms and should not be limited by the embodiments set forth herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0057] like Figure 1 As shown, an embodiment of the present invention provides a method for detecting ion migration of a perovskite solar cell, the method comprising:

[0058] 11. Obtaining a fluorine-doped tin oxide coated glass substrate and cleaning it to obtain a cleaned glass substrate;

[0059] 12. Spin-coating a SnO2 colloidal solution on the cleaned glass substrate and performing annealing to obtain an electron transport layer;

[0060] 13. Preparing perovskite solutions of different compositions according to a preset precursor solution formula, spin-coating the perovskite solution on the electron transport layer and performing annealing treatment to obtain perovskite films of different compositions;

[0061] 14. Coating the Spiro-OMeTAD solution on the perovskite film to obtain a hole transport layer;

[0062] 15. Depositing a gold electrode on the hole transport layer to obtain a solar cell device;

[0063] 16. Connect the solar cell device with a CMOS switch, a digital oscilloscope, an adjustable laser exciter, and a variable resistor to obtain a VL-TPT measurement system;

[0064] 17. According to the VL-TPT measurement system, simulate different illumination conditions and different working load conditions, operate the solar cell device, and use a digital oscilloscope to record the photo-generated voltage and current-voltage characteristic data to obtain the VL-TPT curve;

[0065] 18. Extract the key parameter values ​​of the VL-TPT curve and analyze the relationship between the key parameter values ​​to evaluate the relationship between the interface ion accumulation and the load.

[0066] In an embodiment of the present invention, the fluorine-doped tin oxide coated glass substrate is cleaned to remove impurities and pollutants on the surface, thereby ensuring the uniformity and adhesion of subsequent coatings, improving the quality of the perovskite film, and reducing the performance degradation caused by unclean substrates; perovskite solutions of different compositions are prepared according to a preset formula, and are evenly coated on a glass substrate by spin coating technology to form perovskite films of different compositions, providing diversified samples for subsequent research; the perovskite film is crystallized by annealing treatment to improve its photoelectric conversion efficiency, optimize the performance of the perovskite film, and lay the foundation for the efficient operation of the solar cell device; a hole transport layer and a gold electrode are coated on the perovskite film to form a complete solar cell device, so that the solar cell device has a photoelectric conversion function , which can output electrical energy to the outside; connect the solar cell device with CMOS switch, digital oscilloscope, adjustable laser exciter and variable resistor and other equipment to form a VL-TPT measurement system, which provides necessary hardware support for subsequent simulation experiments and data recording; simulate different illumination conditions and different working load conditions by adjusting the adjustable laser exciter and variable resistor, obtain the performance data of the solar cell device under different conditions, and provide an experimental basis for evaluating the relationship between interface ion accumulation and load; use a digital oscilloscope to record the photogenerated voltage and current-voltage characteristic data, and extract the key parameter values ​​of the VL-TPT curve. Through data analysis, the relationship between interface ion accumulation and load is revealed, which provides a theoretical basis for optimizing the performance of solar cell devices.

[0067] like Figure 1 As shown, 11. Obtaining a fluorine-doped tin oxide coated glass substrate and cleaning it to obtain a cleaned glass substrate, comprising:

[0068] 111. Prepare a fluorine-doped tin oxide coated glass substrate;

[0069] 112. Use an ultrasonic cleaning tank with an aqueous detergent solution, deionized water, acetone and ethanol to clean the glass substrate, and perform ultraviolet-ozone plasma on the glass substrate to obtain a cleaned glass substrate.

[0070] In the embodiment of the present invention, firstly, the glass substrate is cleaned in an ultrasonic cleaning tank with an aqueous detergent solution, deionized water, acetone and ethanol for 10 minutes respectively, and then treated with ultraviolet-ozone plasma for 15 minutes; fluorine-doped tin oxide (FTO) is a transparent conductive oxide with good conductivity and light transmittance. The FTO coating is prepared on the glass substrate, which can provide a stable current transmission path for the subsequent solar cell device; the high light transmittance of the FTO coating helps to allow more sunlight to penetrate the glass substrate and irradiate the perovskite film, thereby improving the photoelectric conversion efficiency of the solar cell; the FTO coating has good chemical stability and thermal stability, and can maintain stable performance during the operation of the solar cell device; using an ultrasonic cleaning tank with a cleaning agent such as an aqueous detergent solution, deionized water, acetone and ethanol can effectively remove dust and grease on the surface of the glass substrate. , organic matter and other pollutants to ensure the cleanliness of the substrate; the surface of the glass substrate after cleaning is cleaner, which is conducive to the good adhesion between the FTO coating and the glass substrate, and improves the stability and durability of the coating; UV-ozone plasma treatment can further improve the surface properties of the glass substrate, such as increasing the surface energy, increasing the surface roughness, etc., which is conducive to the uniform deposition and adhesion of the FTO coating, and obtain a clean glass substrate: through the cleaning process, a glass substrate with no pollutants and a clean surface can be obtained, which provides a good foundation for the subsequent preparation of the FTO coating; improve the quality of the FTO coating: the surface of the glass substrate after cleaning is more suitable for the deposition of the FTO coating, and a uniform, dense, and highly adhesive FTO coating can be obtained, thereby improving the performance and stability of the solar cell device. At the same time, a clean substrate also helps to reduce the accumulation of interface ions and reduce the adverse effects on the performance of solar cells.

[0071] like Figure 1 As shown, 12, spin coating SnO2 colloidal solution on the cleaned glass substrate and performing annealing to obtain an electron transport layer, including:

[0072] 121. Obtain a SnO2 colloid stock solution, and dilute it with water at a ratio of 1:5 to obtain a diluted SnO2 colloid solution;

[0073] 122. Use a pipette to spin-coat the diluted SnO2 colloidal solution onto the cleaned glass substrate to obtain a SnO2 thin film;

[0074] 123. After the spin coating is completed, the cleaned glass substrate coated with the SnO2 film is annealed in an annealing device to obtain an electron transport layer.

[0075] In an embodiment of the present invention, a 1:5 diluted SnO2 colloidal solution is used, spin-coated at 4000 rpm for 30 seconds, and then annealed at 150°C for 30 seconds; first, a SnO2 colloidal stock solution is obtained, and diluted with water at a ratio of 1:5 to obtain a diluted SnO2 colloidal solution, and the concentration of the SnO2 colloidal solution is adjusted to make it suitable for the spin coating process. By diluting, the thickness and uniformity of the SnO2 film after spin coating can be controlled, laying the foundation for the subsequent preparation of a high-quality electron transport layer; the diluted SnO2 colloidal solution is spin-coated on a cleaned glass substrate using a pipette to obtain a SnO2 thin film, forming a uniform and dense layer on the glass substrate. SnO2 thin film, spin coating technology uses centrifugal force to spread the colloidal solution evenly on the substrate surface to form a flat wet film. As the solvent evaporates, the wet film gradually solidifies and finally forms a SnO2 thin film. The cleaned glass substrate coated with the SnO2 thin film is annealed in an annealing device to obtain an electron transport layer, improve the crystallinity and density of the SnO2 thin film, and improve its electron transport performance. During the annealing process, the residual solvent in the SnO2 thin film is completely evaporated, and at the same time, the SnO2 nanoparticles in the film are rearranged and fused to form a more continuous and ordered crystal structure, which is beneficial to improve the mobility of electrons in the film, reduce resistance, and thus enhance the performance of the electron transport layer.

[0076] like Figure 1 As shown, 13, preparing perovskite solutions of different compositions according to a preset precursor solution formula, spin coating the perovskite solution on the electron transport layer and performing annealing treatment to obtain perovskite films of different compositions, including:

[0077] 131, preparing perovskite solutions of different compositions according to a preset precursor solution formula;

[0078] 132, spin coating the perovskite solution on the electron transport layer, using an anti-solvent to assist film formation, to obtain a perovskite film;

[0079] 133, annealing the perovskite film to obtain an annealed perovskite film.

[0080] In the embodiments of the present invention, by changing the ratio of components in the precursor solution, the photoelectric properties such as the energy band structure, carrier concentration and mobility of the perovskite film can be adjusted, thereby optimizing the photoelectric conversion efficiency of the solar cell; preparing perovskite solutions of different components is helpful to explore the best formula that is most suitable for the current solar cell device structure and working conditions, and improve the overall performance of the device; through the spin coating process, the perovskite solution can be evenly coated on the electron transport layer to form a uniform thin film, and the anti-solvent assisted film formation is helpful to further control the morphology and crystal quality of the film; during the spin coating film formation and anti-solvent assisted film formation process, the parameters such as the thickness, crystallinity and surface roughness of the film can be adjusted, thereby optimizing the thin film. Photoelectric properties and stability of the film; annealing treatment can promote the crystallization process of the perovskite film, improve the crystallinity and grain size of the film, thereby optimizing the photoelectric properties of the film; during the annealing process, impurities such as residual solvents and organic matter in the film can be removed to improve the purity and stability of the film; annealing treatment can also optimize the interface contact between the perovskite film and the electron transport layer and other layers, and improve the overall performance of the device; improve the performance of solar cells: the annealed perovskite film has better photoelectric properties and stability, which helps to improve the photoelectric conversion efficiency and long-term stability of solar cells. At the same time, high-quality film materials also help to reduce adverse effects such as interface ion accumulation and improve the reliability and service life of the device.

[0081] Optionally, the precursor solution of the MAPbI3 perovskite film is 1.2M MAI and PbI2 powder dissolved in 1mL of a solvent mixture of DMF and DMSO (volume ratio 7:3), and the precursor solution of the MA0.75FA0.25PbI3 perovskite film is 0.9MMAI, 0.3M FAI and 1.2M PbI2 dissolved in 1mL of the same solvent mixture. 45μL of the precursor solution is spin-coated on the substrate at an initial speed of 1000rpm for 10 seconds, then increased to 5000rpm for 25 seconds, and 260μL of chlorobenzene is added 13 seconds before the end of the spin coating process. The resulting MAPbI3 and MA0.75FA0.25PbI3 films are annealed at 100°C for 30 minutes;

[0082] Alternatively, the precursor solution of FAPbI3 perovskite film is 1M PbI2 and 1M FAI powder dissolved in a solvent mixture of 600μL DMF and 100μL DMSO, 35μL of the precursor solution is spin coated on the substrate at a spin coating speed of 5000rpm for 30 seconds, 110μL of chlorobenzene is added as an anti-solvent after the first 10 seconds, and the film is subsequently annealed at 100°C for 1 minute and then at 150°C for 20 minutes.

[0083] like Figure 1As shown, 14, coating the Spiro-OMeTAD solution on the perovskite film to obtain a hole transport layer, comprising:

[0084] 141. Weigh 72.3 mg of Spiro-OMeTAD powder;

[0085] 142. Dissolve the weighed Spiro-OMeTAD powder in 1 mL of chlorobenzene solvent to obtain a first solution;

[0086] 143. Weigh 520 mg of Li-TFSI and dissolve it in 1 mL of acetonitrile solvent to obtain a Li-TFSI solution;

[0087] 144. Weigh 300 mg of cobalt (III) FK209 and dissolve it in 1 mL of acetonitrile solvent to obtain a cobalt (III) FK209 solution;

[0088] 145. Take 17.5 μL of Li-TFSI solution, 28.8 μL of cobalt (III) FK209 solution, and 28.8 μL of 4-tert-butylpyridine and add them to the first solution to obtain a Spiro-OMeTAD solution;

[0089] 146. Spin-coat the Spiro-OMeTAD solution on the perovskite film to obtain a hole transport layer.

[0090] In the embodiment of the present invention, 72.3 mg of Spiro-OMeTAD powder was weighed to ensure the accurate measurement of the hole transport material Spiro-OMeTAD, which provided a basis for the subsequent preparation of a high-quality solution; the weighed Spiro-OMeTAD powder was dissolved in 1 mL of chlorobenzene solvent to obtain a first solution, and the Spiro-OMeTAD powder was uniformly dissolved in the chlorobenzene solvent to form a uniform and stable solution, which was convenient for subsequent spin coating operations; 520 mg of Li-TFSI was weighed and dissolved in 1 mL of acetonitrile solvent to obtain a Li-TFSI solution, and an acetonitrile solution of Li-TFSI was prepared. Li-TFSI as an additive can improve the hole transport performance of Spiro-OMeTAD; 300 mg of g of cobalt (III) FK209 was dissolved in 1 mL of acetonitrile solvent to obtain a cobalt (III) FK209 solution to enhance the hole transport efficiency and stability of Spiro-OMeTAD; 17.5 μL of Li-TFSI solution, 28.8 μL of cobalt (III) FK209 solution, and 28.8 μL of 4-tert-butylpyridine were added to the first solution to obtain a Spiro-OMeTAD solution, which can combine the advantages of various additives to improve the overall performance of the hole transport layer; the Spiro-OMeTAD solution was spin-coated on the perovskite film to obtain a hole transport layer, which can effectively extract and transport holes and is one of the key functional layers in perovskite solar cells. It is crucial to improving the photoelectric conversion efficiency of the battery.

[0091] like Figure 1 As shown, 15. depositing a gold electrode on the hole transport layer to obtain a solar cell device, comprising:

[0092] 151. Place the prepared gold electrode into a thermal evaporation source;

[0093] 152. Use a vacuum system to extract the gas in the deposition chamber;

[0094] 153. Heat the thermal evaporation source to make the gold electrode reach the evaporation temperature;

[0095] 154. When the gold electrode begins to evaporate, the evaporated gold atoms are deposited on the hole transport layer to obtain a solar cell device.

[0096] In an embodiment of the present invention, a 80nm gold electrode is deposited by thermal evaporation at a deposition rate of 0.1nm·s-1. The prepared gold electrode is placed in a thermal evaporation source. As a key component of a solar cell, the gold electrode has good conductivity and stability and can effectively collect and guide holes in the hole transport layer. A vacuum system is used to extract the gas in the deposition chamber to create a high vacuum deposition environment to reduce the collision between gold atoms and gas molecules during the evaporation process, ensuring that the gold atoms can fly in a straight line and be evenly deposited on the hole transport layer. The high vacuum can also prevent the influence of impurities in the deposition chamber on the quality of the gold electrode. The thermal evaporation source is heated to make the gold electrode Reaching the evaporation temperature, the gold electrode is heated to a sufficient evaporation temperature, thereby changing it from a solid state to a gaseous state. During the evaporation process, the gold atoms obtain sufficient energy to detach from the surface of the material, and then form gold vapor in the deposition chamber; when the gold electrode begins to evaporate, the evaporated gold atoms are deposited on the hole transport layer to obtain a solar cell device. The evaporated gold atoms fly in a straight line in a vacuum environment and are finally deposited on the hole transport layer. As the deposition process proceeds, the gold atoms gradually form a continuous and dense gold electrode on the surface of the hole transport layer. The gold electrode not only has good conductivity and can effectively export holes, but also improves the photoelectric conversion efficiency of the solar cell.

[0097] like Figure 1 As shown in FIG16 , the solar cell device is connected with a CMOS switch, a digital oscilloscope, an adjustable laser exciter and a variable resistor to obtain a VL-TPT measurement system, including:

[0098] 161. Connect the positive and negative electrodes of the constructed solar cell device to the corresponding ports of the VL-TPT measurement system respectively;

[0099] 162. Connect the input of the CMOS switch to a channel of a digital oscilloscope;

[0100] 163. Connect the output end of the CMOS switch to the solar cell device to control the switching of the "open circuit" and "short circuit" states of the circuit;

[0101] 164. Align the output beam of the adjustable laser exciter toward the active area of ​​the solar cell device;

[0102] 165. Connect a variable resistor in series in the circuit of a solar cell device.

[0103] In the embodiment of the present invention, the positive and negative electrodes of the solar cell device are connected to the corresponding ports of the VL-TPT measurement system, and the electrical parameters such as voltage and current of the device under the conditions of illumination and working load can be monitored and recorded in real time; the performance of the solar cell device can be comprehensively evaluated through the VL-TPT measurement system, including key indicators such as photoelectric conversion efficiency, open circuit voltage, and short circuit current; the input end of the CMOS switch is connected to a channel of the digital oscilloscope, and the output end is connected to the solar cell device, which is used to accurately control the switching of the "open circuit" and "short circuit" states of the circuit; through the digital oscilloscope, the changes in the electrical parameters of the solar cell device when the CMOS switch is switched can be synchronously recorded, which is convenient for subsequent data analysis and processing; the output beam of the adjustable laser exciter is aimed at the active area of ​​the solar cell device, which can simulate different illumination conditions and study the influence of factors such as illumination intensity and wavelength on the device performance; by adjusting the parameters of the laser exciter, the photoelectric conversion efficiency of the solar cell device can be optimized and the optimal working conditions can be explored; the variable resistor is connected in series in the circuit of the solar cell device, which can simulate different working load conditions and study the influence of load changes on the device performance; by adjusting the resistance value of the variable resistor, the performance of the solar cell device under different load conditions can be comprehensively evaluated.

[0104] like Figure 1 As shown in FIG17, according to the VL-TPT measurement system, different illumination conditions and different working load conditions are simulated, the solar cell device is operated, and the photo-generated voltage and current-voltage characteristic data are recorded using a digital oscilloscope to obtain a VL-TPT curve, including:

[0105] 171. Using an adjustable laser exciter, adjust the light intensity to a predetermined value to simulate the light conditions under actual working conditions;

[0106] 172. Adjust the load of the solar cell device through a variable resistor to simulate different working load conditions;

[0107] 173. Under different lighting and load conditions, to obtain real-time response data of solar cell devices;

[0108] 174. Based on the real-time response data, use a digital oscilloscope to record the photo-generated voltage and current-voltage characteristic data of the solar cell device in real time to obtain a VL-TPT curve;

[0109] In the embodiment of the present invention, the illumination intensity can be precisely adjusted to a predetermined value by an adjustable laser exciter to simulate the illumination received by the solar cell device under actual working conditions; different illumination intensities will affect the performance of the solar cell device, and by adjusting the illumination intensity, such influence can be studied and the performance of the device under specific illumination conditions can be optimized; the load of the solar cell device can be adjusted by a variable resistor to simulate different working load conditions; different load conditions will affect the performance of the solar cell device, and by adjusting the load, such influence can be studied and the performance of the device under specific load conditions can be optimized; under different illumination and load conditions, the response data of the solar cell device can be obtained in real time, and the performance of the device can be monitored in real time; the real-time response data provides data support for the performance optimization of the solar cell device, and through data analysis, the performance bottleneck of the device under specific conditions can be found, and an optimization plan can be proposed; by using a digital oscilloscope to record the photogenerated voltage and current-voltage characteristic data of the solar cell device in real time, a VL-TPT curve can be obtained for comprehensive evaluation of the performance of the device; the VL-TPT curve is an important basis for performance analysis of solar cell devices, and through curve analysis, key indicators such as the open circuit voltage, short circuit current, and fill factor of the device can be understood.

[0110] When the device is in open circuit condition, the dynamic process includes: the device is under continuous light until the photo-generated voltage (V ph ) reaches the maximum value; after the light is removed, V ph The decay of Vph is similar to the open circuit voltage decay (OCVD) measurement; at a specific time delay, the circuit switches from the "open" state to the "short" state, resulting in a sudden drop in Vph due to short-circuit charge extraction, where the photogenerated charge is consumed as photocurrent; the circuit switches back to the "open" state, resulting in a unique V ph Recovery phenomenon, which is a significant feature of the VL-TPT curve, V ph The recovery mechanism can be explained by considering the ion-carrier coupling, which will be discussed later;

[0111] On the other hand, when the device is in operation under a specific load, the dynamic process includes: the device is under light, the load is connected to its terminals, and the final stable operating voltage (V app ); when switching from the working state to the “short-circuit” state and removing the illumination and load, a rapid decay of the working voltage is observed; after returning to the “open-circuit” state, it is remarkable that the VL-TPT dynamics are measured at the same time delay (0 seconds) but under different loads.

[0112] like Figure 1As shown in 18, the key parameter values ​​of the VL-TPT curve are extracted, and the relationship between the key parameter values ​​is analyzed to evaluate the relationship between the interface ion accumulation and the load, including:

[0113] 181. According to the VL-TPT curve, extract the parameter V ex and V r , where V ex V when switching from the "open circuit" state or working state to the "short circuit" state ph Value, V r is the maximum voltage recovered after returning to the "open circuit" state or operating condition;

[0114] 182. Analysis V r With V ex The relationship between the interface ion accumulation and the load is evaluated to obtain the relationship between Vr and V ex relationship and ion migration mechanism.

[0115] In the embodiment of the present invention, by extracting V from the VL-TPT curve ex (V when switching from "open circuit" or working state to "short circuit" state ph value) and V r (the maximum voltage recovered after returning to the "open circuit" state or working condition) can quantitatively evaluate the performance of solar cell devices under specific conditions; V ex and V r It reflects the dynamic response characteristics of solar cell devices during state switching, which is of great significance for understanding the working mechanism of the device and optimizing performance. r With V ex The relationship between V and ions can provide a deeper understanding of the migration mechanism of interface ions in solar cell devices, including the accumulation, migration and recombination of ions at the interface. ex and V r The value of is closely related to the load conditions. Therefore, by analyzing their relationship, the effect of load on the accumulation of interface ions can be evaluated, and the performance of the device under a specific load can be optimized. phThe recovery comes from the charge released by PITS entering the conduction band, and then the charge in the perovskite phase is injected into the electrode. Therefore, Vex includes the contribution of free charge and ion-coupled charge, while Vr is mainly affected by ion-coupled charge. The key difference between ion migration under working conditions and open circuit conditions is the existence of the working electric field generated by the load, which enables the charge to be transferred to the external circuit, while the remaining charge in the device is coupled with the ions. As the load decreases, the working electric field increases, resulting in a decrease in the interface carrier concentration, thereby reducing the ion accumulation at the interface. At the same time, the potential well promotes the accumulation of a small amount of charge at the interface, resulting in the amount of ion-coupled charge exceeding the amount of charge contributing to the working voltage when approaching the short-circuit condition.

[0116] An embodiment of the present invention further provides a device 20 for detecting ion migration of a perovskite solar cell, comprising:

[0117] Solar cell devices, laser exciters, CMOS switches, digital oscilloscopes;

[0118] The solar cell device is connected to the CMOS switch through a wire, and the CMOS switch is connected in parallel with the digital oscilloscope;

[0119] The laser exciter is connected to the solar cell device via optical fiber.

[0120] It should be noted that the device is a device corresponding to the above method, and all implementation methods in the above method embodiment are applicable to this embodiment and can achieve the same technical effect.

[0121] The embodiment of the present invention further provides a computing device, comprising: a processor, a memory storing a computer program, wherein when the computer program is executed by the processor, the method described above is executed. All implementations in the above method embodiment are applicable to this embodiment and can achieve the same technical effect.

[0122] The embodiment of the present invention also provides a computer-readable storage medium storing instructions, which, when executed on a computer, enable the computer to execute the method described above. All implementations in the above method embodiment are applicable to this embodiment and can achieve the same technical effect.

[0123] Those skilled in the art will appreciate that the units and algorithm steps of each example described in conjunction with the embodiments disclosed herein can be implemented in electronic hardware, or a combination of computer software and electronic hardware. Whether these functions are performed in hardware or software depends on the specific application and design constraints of the technical solution. Professional and technical personnel can use different methods to implement the described functions for each specific application, but such implementation should not be considered to be beyond the scope of the present invention.

[0124] Those skilled in the art can clearly understand that, for the convenience and brevity of description, the specific working processes of the systems, devices and units described above can refer to the corresponding processes in the aforementioned method embodiments and will not be repeated here.

[0125] In the embodiments provided by the present invention, it should be understood that the disclosed devices and methods can be implemented in other ways. For example, the device embodiments described above are only schematic. For example, the division of the units is only a logical function division. There may be other division methods in actual implementation, such as multiple units or components can be combined or integrated into another system, or some features can be ignored or not executed. Another point is that the mutual coupling or direct coupling or communication connection shown or discussed can be through some interfaces, indirect coupling or communication connection of devices or units, which can be electrical, mechanical or other forms.

[0126] The units described as separate components may or may not be physically separated, and the components shown as units may or may not be physical units, that is, they may be located in one place or distributed on multiple network units. Some or all of the units may be selected according to actual needs to achieve the purpose of the solution of this embodiment.

[0127] In addition, each functional unit in each embodiment of the present invention may be integrated into one processing unit, or each unit may exist physically separately, or two or more units may be integrated into one unit.

[0128] If the functions are implemented in the form of software functional units and sold or used as independent products, they can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the method described in each embodiment of the present invention. The aforementioned storage medium includes: various media that can store program codes, such as USB flash drives, mobile hard disks, ROM, RAM, magnetic disks, or optical disks.

[0129] In addition, it should be noted that in the device and method of the present invention, it is obvious that each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent schemes of the present invention. In addition, the steps of performing the above-mentioned series of processing can naturally be performed in chronological order according to the order of description, but it is not necessary to perform them in chronological order, and some steps can be performed in parallel or independently of each other. For those of ordinary skill in the art, it is understood that all or any steps or components of the method and device of the present invention can be implemented in any computing device (including processors, storage media, etc.) or a network of computing devices in hardware, firmware, software or a combination thereof, which can be achieved by those of ordinary skill in the art using their basic programming skills after reading the description of the present invention.

[0130] Therefore, the purpose of the present invention can also be achieved by running a program or a group of programs on any computing device. The computing device can be a well-known general-purpose device. Therefore, the purpose of the present invention can also be achieved by simply providing a program product containing a program code that implements the method or device. That is to say, such a program product also constitutes the present invention, and the storage medium storing such a program product also constitutes the present invention. Obviously, the storage medium can be any well-known storage medium or any storage medium developed in the future. It should also be pointed out that in the device and method of the present invention, it is obvious that each component or each step can be decomposed and / or recombined. These decompositions and / or recombinations should be regarded as equivalent schemes of the present invention. In addition, the steps of performing the above-mentioned series of processing can naturally be performed in chronological order according to the order of description, but it is not necessary to perform them in chronological order. Some steps can be performed in parallel or independently of each other.

[0131] The above is a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A method for detecting ion migration of a perovskite solar cell, characterized in that: The method comprises: Obtaining a fluorine-doped tin oxide coated glass substrate and cleaning it to obtain a cleaned glass substrate; Spin coating SnO2 colloidal solution on the cleaned glass substrate and performing annealing treatment to obtain an electron transport layer; Preparing perovskite solutions of different compositions according to a preset precursor solution formula, spin-coating the perovskite solution on the electron transport layer and performing annealing treatment to obtain perovskite films of different compositions; Coating a Spiro-OMeTAD solution on the perovskite film to obtain a hole transport layer; depositing a gold electrode on the hole transport layer to obtain a solar cell device; Connecting the solar cell device with a CMOS switch, a digital oscilloscope, an adjustable laser exciter, and a variable resistor to obtain a VL-TPT measurement system; According to the VL-TPT measurement system, different illumination conditions and different working load conditions are simulated, the solar cell device is operated, and the photo-generated voltage and current-voltage characteristic data are recorded using a digital oscilloscope to obtain the VL-TPT curve; The key parameter values ​​of the VL-TPT curves were extracted and their relationships were analyzed to evaluate the relationship between the interfacial ion accumulation and the loading.

2. The method for ion migration detection of a perovskite solar cell according to claim 1, characterized in that: Obtaining a fluorine-doped tin oxide coated glass substrate and cleaning it to obtain a cleaned glass substrate, comprising: preparing a fluorine-doped tin oxide-coated glass substrate; The glass substrate is cleaned by using an ultrasonic cleaning tank with an aqueous detergent solution, deionized water, acetone and ethanol, and the glass substrate is subjected to ultraviolet-ozone plasma to obtain a cleaned glass substrate.

3. The method for ion migration detection of a perovskite solar cell according to claim 2, characterized in that: The SnO2 colloidal solution is spin-coated on the cleaned glass substrate and annealed to obtain an electron transport layer, including: Obtain a SnO2 colloid stock solution, and dilute it with water at a ratio of 1:5 to obtain a diluted SnO2 colloid solution; The diluted SnO2 colloidal solution was spin-coated on the cleaned glass substrate using a pipette to obtain a SnO2 thin film; After the spin coating is completed, the cleaned glass substrate coated with the SnO2 film is annealed in an annealing device to obtain an electron transport layer.

4. The method for ion migration detection of a perovskite solar cell according to claim 3, characterized in that: A perovskite solution of different compositions is prepared according to a preset precursor solution formula, and the perovskite solution is spin-coated on the electron transport layer and annealed to obtain a perovskite film of different compositions, including: According to the preset precursor solution formula, perovskite solutions with different compositions are prepared respectively; Spin coating the perovskite solution on the electron transport layer and using an anti-solvent to assist film formation to obtain a perovskite film; The perovskite film is annealed to obtain an annealed perovskite film.

5. The method for ion migration detection of a perovskite solar cell according to claim 4, characterized in that: Coating the Spiro-OMeTAD solution on the perovskite film to obtain a hole transport layer, including: Weigh 72.3 mg of Spiro-OMeTAD powder; The weighed Spiro-OMeTAD powder was dissolved in 1 mL of chlorobenzene solvent to obtain a first solution; Weigh 520 mg of Li-TFSI and dissolve it in 1 mL of acetonitrile solvent to obtain a Li-TFSI solution; Weigh 300 mg of cobalt (III) FK209 and dissolve it in 1 mL of acetonitrile solvent to obtain a cobalt (III) FK209 solution; 17.5 μL of Li-TFSI solution, 28.8 μL of cobalt (III) FK209 solution, and 28.8 μL of 4-tert-butylpyridine were added to the first solution to obtain a Spiro-OMeTAD solution; The Spiro-OMeTAD solution was spin-coated on the perovskite film to obtain a hole transport layer.

6. The method for ion migration detection of a perovskite solar cell according to claim 5, characterized in that: A gold electrode is deposited on the hole transport layer to obtain a solar cell device, comprising: Place the prepared gold electrode into the thermal evaporation source; Use a vacuum system to extract the gas in the deposition chamber; The thermal evaporation source is heated to make the gold electrode reach the evaporation temperature; When the gold electrode begins to evaporate, the evaporated gold atoms are deposited on the hole transport layer to obtain a solar cell device.

7. The method for ion migration detection of a perovskite solar cell according to claim 6, characterized in that: Connect the solar cell device with a CMOS switch, a digital oscilloscope, an adjustable laser driver, and a variable resistor to obtain a VL-TPT measurement system, including: Connect the positive and negative electrodes of the constructed solar cell device to the corresponding ports of the VL-TPT measurement system respectively; Connect the input of the CMOS switch to a channel of a digital oscilloscope; The output end of the CMOS switch is connected to the solar cell device to control the "open circuit" and "short circuit" state switching of the circuit; directing the output beam of the adjustable laser exciter toward the active region of the solar cell device; A variable resistor is connected in series in the circuit of the solar cell device.

8. A device for detecting ion migration of a perovskite solar cell, characterized in that: include: Solar cell devices, laser exciters, CMOS switches, digital oscilloscopes; The solar cell device is connected to the CMOS switch through a wire, and the CMOS switch is connected in parallel with the digital oscilloscope; The laser exciter is connected to the solar cell device via optical fiber.

9. A computing device, characterized in that include: one or more processors; A storage device for storing one or more programs, when the one or more programs are executed by the one or more processors, the one or more processors implement the method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a program, which, when executed by a processor, implements the method according to any one of claims 1 to 7.

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