Power supply parameter adjusting method, computing device, medium, adjusting device and system

Abstract

The invention relates to the technical field of semiconductor equipment, particularly provides a power supply parameter adjusting method, computing equipment, a medium, adjusting equipment and a system, and aims to solve the problems of how to reduce the number of times of measurement and improve the optimization efficiency of power supply adjustment. The method comprises the following steps: acquiring an initial power supply parameter search range and an optimization parameter; determining a first measurement point and a second measurement point of the power supply parameters based on the initial power supply parameter search range and the optimization parameters; obtaining measurement values corresponding to the first measurement point and the second measurement point from a measurement device; comparing the measured values, and reducing the power supply parameter search range based on the comparison result to generate a new power supply parameter search range; and determining the first measuring point and the second measuring point again based on the new power supply parameter search range and the optimization parameter, repeating the steps until a preset search exit condition is met, and outputting a target power supply parameter value. The number of measurement times is greatly reduced, the measurement time is effectively shortened, and more accurate target power supply parameter values can be obtained.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor device technology, and in particular to a power supply parameter adjustment method, a computing device, a medium, an adjustment device and a system. Background Art

[0002] In the production process of semiconductor machines, it is usually necessary to adjust multiple power supplies so that the generated ion flow intensity meets the process requirements. Since there is no definite correspondence between the power supply parameter settings and the detected ion flow intensity, in order to find the voltage or current setting value that meets the requirements, the currently commonly used optimization method is the traditional curve fitting method, that is, measuring the ion flow intensity value corresponding to the power supply parameters point by point, and after obtaining enough sample points, determining the optimal power supply parameters by fitting the curve.

[0003] However, this method has obvious shortcomings: too many measurements, each measuring point needs to be tested one by one, which takes a lot of time and reduces the production efficiency of the machine; insufficient adaptability, the measurement process takes a long time to cover the entire parameter range, and it is difficult to quickly adapt to changing process conditions.

[0004] Accordingly, the art needs a new power parameter adjustment solution to solve the above problems. Summary of the invention

[0005] In order to overcome the above-mentioned defects, the present invention is proposed to solve or at least partially solve the technical problem of how to reduce the number of measurements and improve the optimization efficiency of power supply regulation.

[0006] In a first aspect, a power supply parameter adjustment method is provided, which is applied to a semiconductor machine, comprising:

[0007] S1, obtaining the initial power supply parameter search range and optimization parameters;

[0008] S2, determining a first measuring point and a second measuring point of the power parameter based on the initial power parameter search range and the optimization parameter;

[0009] S3, obtaining measurement values ​​corresponding to the first measuring point and the second measuring point from a measuring device;

[0010] S4, comparing the measurement values ​​corresponding to the first measuring point and the second measuring point, and narrowing the power parameter search range based on the comparison result to generate a new power parameter search range;

[0011] S5, based on the new power parameter search range and the optimization parameter, re-determine the first measuring point and the second measuring point, and execute step S3 to step S4 in a loop until a preset search exit condition is met;

[0012] S6, outputting the power parameter that meets the search exit condition as the target power parameter value.

[0013] In a technical solution of the above power parameter adjustment method, the first and second measuring points of the power parameter are determined based on the initial power parameter search range and the optimization parameter, including:

[0014] When the power supply parameter search range is [x L ,x H ], when the optimization parameter is R, the first measuring point x is obtained based on the following formula i and the second measuring point x j :

[0015] x i =x L +R×(x H -x L ),

[0016] x j =x L +(1-R)×(x H -x L ), where R<0.5.

[0017] In a technical solution of the above power supply parameter adjustment method, if the first measuring point x is measured i and the second measuring point x j The corresponding measured values ​​are y i ,y j , the comparing the measurement values ​​corresponding to the first measuring point and the second measuring point, and narrowing the power supply parameter search range based on the comparison result to generate a new power supply parameter search range, includes:

[0018] If y i >y j , then the new power supply parameter search range is [x L ,x j ];

[0019] If y i <y j , then the new power supply parameter search range is [x i ,x H ].

[0020] In a technical solution of the above power supply parameter adjustment method, the method further includes:

[0021] If y i >y j , then the new power supply parameter search range is [x L ,x j ], x iAs a test point for a new round of search;

[0022] If y i <y j , then the new power supply parameter search range is [x i ,x H ], x j As a test point for a new round of search.

[0023] In a technical solution of the above power parameter adjustment method, the first measuring point and the second measuring point are re-determined based on the new power parameter search range and the optimization parameter, and the above steps are repeated until a preset search exit condition is met, including:

[0024] When the power parameter search range is smaller than a preset threshold, or

[0025] When the difference between the power parameter search ranges of two consecutive searches is less than a preset difference, the search ends.

[0026] In a technical solution of the above power parameter adjustment method, the outputting of the power parameter satisfying the search exit condition as the target power parameter value includes:

[0027] According to the power parameter search range corresponding to the search end, the target power parameter value is obtained.

[0028] In one technical solution of the power supply parameter adjustment method, the semiconductor machine includes a plurality of power supplies.

[0029] For each power supply, the power supply parameters are adjusted based on the method described in any one of the technical solutions of the power supply parameter adjustment method to obtain the corresponding target power supply parameter value.

[0030] In a technical solution of the above power supply parameter adjustment method, the power supply parameter is a current or voltage parameter of the power supply;

[0031] The measured value is an ion current intensity value.

[0032] In a second aspect, a computing device is provided, comprising at least one processor; and a memory communicatively connected to the at least one processor; wherein a computer program is stored in the memory, and when the computer program is executed by the at least one processor, the method described in any one of the technical solutions of the above-mentioned power supply parameter adjustment method is implemented.

[0033] In a third aspect, a computer-readable storage medium is provided, wherein a plurality of program codes are stored therein, wherein the program codes are suitable for being loaded and run by a processor to execute the method described in any one of the technical solutions of the above-mentioned power supply parameter adjustment method.

[0034] In a fourth aspect, a power parameter adjustment device for a semiconductor machine is provided, comprising:

[0035] According to the computing device above;

[0036] The measuring device is used to measure the measurement values ​​corresponding to the first measuring point and the second measuring point.

[0037] In a fifth aspect, a semiconductor machine system is provided, comprising:

[0038] Semiconductor machines;

[0039] According to the power parameter adjustment device of the semiconductor machine mentioned above.

[0040] The above one or more technical solutions of the present invention have at least one or more of the following beneficial effects:

[0041] In implementing the power parameter adjustment technical solution provided by the present invention, by gradually narrowing the search range, only two measuring points are needed to complete the optimization each time, which greatly reduces the number of measurements and effectively reduces the measurement time. By using a recursive iteration method and setting reasonable exit conditions, it is ensured that the final search range converges to the vicinity of the target value, so that a more accurate target power parameter value can be obtained.

[0042] It can also be combined with semiconductor machine systems for automated control to further improve production efficiency and accuracy. It does not need to rely on too much historical data or complex modeling, but only needs to be adjusted based on real-time measurements, which is suitable for actual application in semiconductor production lines. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] The disclosure of the present invention will become more easily understood with reference to the accompanying drawings. It is easy for those skilled in the art to understand that these drawings are only for illustrative purposes and are not intended to limit the scope of protection of the present invention. Among them:

[0044] Figure 1 is a flow chart of main steps of a method for adjusting power supply parameters according to an embodiment of the present invention;

[0045] Figure 2 It is a main structural diagram of a computing device according to an embodiment of the present invention. DETAILED DESCRIPTION

[0046] Some embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.

[0047] In the description of the present invention, "module" and "processor" may include hardware, software or a combination of the two. A module may include hardware circuits, various suitable sensors, communication ports, and memories, and may also include software parts, such as program codes, or a combination of software and hardware. The processor may be a central processing unit, a microprocessor, an image processor, a digital signal processor, or any other suitable processor. The processor has data and / or signal processing functions. The processor may be implemented in software, hardware, or a combination of the two. Computer-readable storage media include any suitable medium that can store program codes, such as a magnetic disk, a hard disk, an optical disk, a flash memory, a read-only memory, a random access memory, and the like. The term "A and / or B" means all possible combinations of A and B, such as only A, only B, or A and B. The term "at least one A or B" or "at least one of A and B" has a similar meaning to "A and / or B", and may include only A, only B, or A and B. The singular terms "one" and "the" may also include plural forms.

[0048] In the semiconductor manufacturing process, ion implantation equipment is required to implant specific ions into semiconductor materials. This process can control the electrical properties of the material and is a key step in the preparation process.

[0049] The invention provides a power supply parameter adjustment method, which is applied to a semiconductor machine.

[0050] See also Figure 1 , Figure 1 FIG. 1 is a flow chart of the main steps of a power supply parameter adjustment method according to an embodiment of the present invention. Figure 1 As shown, the power parameter adjustment method in the embodiment of the present invention mainly includes the following steps S1 to S6.

[0051] Step S1, obtaining an initial power supply parameter search range and optimization parameters.

[0052] In one embodiment of the present invention, the initial power parameter search range may be a parameter accepted by an operator or may be pre-stored in a database; the optimization parameters are pre-stored in a database. Exemplarily, the initial power parameter search range is [x L ,x H ], the optimization parameter is R.

[0053] In one embodiment, the initial power parameter search range [x L ,x H ] is the adjustable range of the power supply parameters of the semiconductor machine. The optimization parameter R is used to control the shrinking speed of the search range in each iteration, and can be set and adjusted according to historical data and pre-stored in the database for use.

[0054] Furthermore, in one embodiment of the present invention, the power supply parameter is a current or voltage parameter of the power supply. In the ion implantation process, those skilled in the art can obtain the expected ion current intensity by setting the current or voltage parameter of the semiconductor machine.

[0055] Step S2: determining a first measuring point and a second measuring point of the power supply parameter based on the initial power supply parameter search range and the optimization parameter.

[0056] In one embodiment of the present invention, the determining of the first and second measuring points of the power supply parameters based on the initial power supply parameter search range and the optimization parameter includes:

[0057] When the power supply parameter search range is [x L ,x H ], when the optimization parameter is R, the first measuring point x is obtained based on the following formula i and the second measuring point x j :

[0058] x i =x L +R×(x H -x L ),

[0059] x j =x L +(1-R)×(x H -x L ), where R<0.5.

[0060] Step S3: obtaining measurement values ​​corresponding to the first measuring point and the second measuring point from a measuring device.

[0061] In one embodiment, the measuring device is a Faraday cup; and the measured value is an ion current intensity value.

[0062] Step S4: comparing the measurement values ​​corresponding to the first measurement point and the second measurement point, and narrowing the power supply parameter search range based on the comparison result to generate a new power supply parameter search range.

[0063] In one embodiment of the present invention, if the first measuring point x is measured i and the second measuring point x j The corresponding measured values ​​are y i ,y j , the comparing the measurement values ​​corresponding to the first measuring point and the second measuring point, and narrowing the power supply parameter search range based on the comparison result to generate a new power supply parameter search range, includes:

[0064] If y i >yj , then the new power supply parameter search range is [x L ,x j ].

[0065] This means that at the measuring point x i The current intensity is higher at , so we can infer that the optimal measurement value is in the interval [x L ,x j ] in x. j The intensity at is low, indicating that the maximum value may be in the area to its left.

[0066] If y i >y j , then the new power supply parameter search range is [x L ,x j ], x i As a measurement point for the next round of search. Use this interval as the range for the next search, while keeping x i As the next measurement point, the search efficiency can be improved.

[0067] If y i <y j , then the new power supply parameter search range is [x i ,x H ].

[0068] In this case, based on the inference that the maximum value can only appear on one side, the optimal measurement value may be in the interval [x i ,x H ] At this time, if y i <y j , then the new power supply parameter search range is [x i ,x H ], x j As a test point for a new round of search.

[0069] Step S5, based on the new power parameter search range and the optimization parameters, re-determine the first measuring point and the second measuring point, and loop through steps S3 to S4 until a preset search exit condition is met.

[0070] In one embodiment of the present invention, the first measuring point and the second measuring point are re-determined based on the new power parameter search range and the optimization parameter, and the above steps are repeated until a preset search exit condition is met, including:

[0071] When the power parameter search range is smaller than a preset threshold, or

[0072] When the difference between the power parameter search ranges of two consecutive searches is less than a preset difference, the search ends.

[0073] During the iteration process, the search range continues to shrink. When the power parameter search range is smaller than a preset threshold, it can be considered that the search range is small enough. When the difference between the power parameter search ranges of two adjacent searches is smaller than a preset difference, the search results can be considered stable. When any of the above conditions is met, the search can be terminated.

[0074] The method utilizes the single-peak characteristic of the function, gradually narrows the search range, avoids invalid measurements and unnecessary test points, and thus improves efficiency.

[0075] Step S6, outputting the power parameter that meets the search exit condition as the target power parameter value.

[0076] In one embodiment of the present invention, outputting the power parameter that meets the search exit condition as the target power parameter value includes: acquiring the target power parameter value according to a power parameter search range corresponding to the end of the search.

[0077] Exemplarily, the interval midpoint method may be used to calculate the midpoint of the power parameter search range corresponding to the end of the search as the target power parameter value.

[0078] In one embodiment, the preset difference is 0.001 (mA).

[0079] The initial power supply parameter search range is [8mA, 12mA], and the optimization parameter R is 0.35.

[0080] First search:

[0081] x i =8+0.35×(12-8)=9.4mA;

[0082] x j =8+(1-0.35)×(12-8)=10.6mA;

[0083] Measured y i =10.1mA,y j =9.8mA;

[0084] Because of y i >y j , then the next search range is [8,10.6], and the measurement point 9.4mA is retained.

[0085] Second search, calculate new measurement points:

[0086] x i ' = 9.4mA;

[0087] x j'=8+(1-0.35)×(10.6-8)=10.0mA;

[0088] Measured y i '=10.1mA,y j '=10.2mA;

[0089] Because of y i ' <y j ', then the next search range is [9.4,10.6], and the measurement point 10.0mA is retained.

[0090] Subsequent searches continue to iterate, and when the range difference between the 15th search and the 14th search is less than the preset difference of 0.001 mA, the search ends (at this time the power parameter search range is not less than the preset threshold), and the midpoint of the current search range is obtained as the target power parameter value.

[0091] After obtaining the target power parameter value, the power parameter is set to the target power parameter value to obtain the maximum ion current intensity.

[0092] In a technical solution of the above power parameter adjustment method, the semiconductor machine includes multiple power supplies, wherein for each power supply, the power supply parameter is adjusted based on the method described in any technical solution of the above power parameter adjustment method to obtain a corresponding target power parameter value.

[0093] In actual applications, each power source is optimized individually to achieve the overall goal. Through individual optimization, the settings of each power source can be adjusted more accurately to ensure that the overall current intensity meets the recipe requirements. By adjusting the power supply parameters through the method in the above technical solution, multiple power sources work together to produce an ion flow that meets the process requirements.

[0094] Based on the method described in steps S1 to S6 above, by gradually narrowing the search range, only two measuring points are needed each time to complete the optimization; by using a recursive iteration method and setting reasonable exit conditions; the number of measurements is greatly reduced, the measurement time is effectively reduced, and it is ensured that the final search range converges to the vicinity of the target value, so that a more accurate target power supply parameter value can be obtained.

[0095] The above technical solution is used to find the power supply parameters for obtaining the maximum ion flow. In other technical solutions of the present application, after adjusting the corresponding relationship for narrowing the search range of the power supply parameters based on the comparison result, the above method can also be used to find the power supply parameters for the minimum ion flow. The method is applicable to both the case of maximizing the ion flow intensity and the case of minimizing the ion flow intensity, and has wide applicability.

[0096] The power parameter adjustment method in the above technical solution can be manually adjusted by a technician to set the power supply, and gradually set, measure and record the results, or it can be automatically completed through computer control.

[0097] In an application scenario according to an embodiment of the present invention, automated control can be performed by combining with a semiconductor machine system to further improve production efficiency and accuracy without relying on too much historical data or complex modeling. Adjustments only need to be made based on real-time measurements, which is suitable for actual applications in semiconductor production lines.

[0098] Another aspect of the present invention provides a computing device, see Figure 2 , Figure 2 It is a main structural diagram of a computing device according to an embodiment of the present invention.

[0099] like Figure 2 As shown, in one embodiment according to the present invention, the computing device 200 includes at least one processor 201; and a memory 202 that is communicatively connected to the at least one processor 201; wherein the memory 202 stores a computer program 203, and when the computer program 203 is executed by the at least one processor 201, it implements the method described in any one of the technical solutions of the above-mentioned power parameter adjustment method.

[0001] Exemplarily, the processor 201 may be a central processing unit (CPU), or other general-purpose processors, digital signal processors (DSP), application-specific integrated circuits (ASIC), field-programmable gate arrays (FPGA) or other programmable logic devices, discrete gate or transistor logic devices, discrete hardware components, etc. A general-purpose processor may be a microprocessor or the processor may also be any conventional processor, etc.

[0002] The memory 202 may be an internal storage unit of the computing device 200, for example, a hard disk or memory of the computing device 200; the memory 202 may also be an external storage device of the computing device 200, for example, a plug-in hard disk, a smart media card (SMC), a secure digital (SD) card, a flash card, etc. equipped on the computing device 200. Further, the memory 202 may also include both an internal storage unit of the computing device 200 and an external storage device. The memory 202 is used to store computer programs and other programs and data required by the computing device 200. The memory 202 may also be used to temporarily store data that has been output or is to be output.

[0003] In some possible implementations, the computing device 200 may include multiple processors 201 and memories 202. The program code 203 for executing the power parameter adjustment method of the above method embodiment may be divided into multiple subprograms, each of which may be loaded and run by the processor 201 to execute different steps of the power parameter adjustment method of the above method embodiment. Specifically, each subprogram may be stored in different memories 202, and each processor 201 may be configured to execute programs in one or more memories 202 to jointly implement the power parameter adjustment method of the above method embodiment, that is, each processor 201 executes different steps of the power parameter adjustment method of the above method embodiment to jointly implement the power parameter adjustment method of the above method embodiment.

[0004] The above-mentioned multiple processors 201 may be processors deployed on the same device. For example, the above-mentioned computing device 200 may be a high-performance device composed of multiple processors, and the above-mentioned multiple processors 201 may be processors configured on the high-performance device. In addition, the above-mentioned multiple processors 201 may also be processors deployed on different devices. For example, the above-mentioned computing device 200 may be a server cluster, and the above-mentioned multiple processors 201 may be processors on different servers in the server cluster.

[0005] The computing device 200 may be an electronic device such as a desktop computer, a notebook, a PDA, or a cloud server. The computing device 200 may include, but is not limited to, a processor 201 and a memory 202. Those skilled in the art will appreciate that Figure 2 This is only an example of the computing device 200 and does not constitute a limitation of the computing device 200. The computing device 200 may include more or fewer components than shown in the figure, or a combination of certain components, or different components. For example, the computing device 200 may also include input and output devices, network access devices, buses, etc.

[0100] Another aspect of the present invention provides a computer-readable storage medium.

[0101] In an embodiment of a computer-readable storage medium according to the present invention, the computer-readable storage medium stores a plurality of program codes, and the program codes are suitable for being loaded and run by a processor to execute the method described in any one of the technical solutions of the above-mentioned power parameter adjustment method. For ease of explanation, only the parts related to the embodiment of the present invention are shown. For specific technical details not disclosed, please refer to the method part of the embodiment of the present invention. The computer-readable storage medium can be a storage device formed by various electronic devices. Optionally, the computer-readable storage medium in the embodiment of the present invention is a non-temporary computer-readable storage medium.

[0102] Another aspect of the present invention provides a power parameter adjustment device for a semiconductor machine, comprising: a computing device according to the above; and a measuring device for measuring the measurement values ​​corresponding to the first measuring point and the second measuring point.

[0103] Furthermore, the present invention also provides a semiconductor machine system, comprising: a semiconductor machine; and a power parameter adjustment device according to the semiconductor machine.

[0001] In the above embodiments, the description of each embodiment has its own emphasis. For the part not described or recorded in detail in a certain embodiment, reference can be made to the relevant description of other embodiments. All the above optional technical solutions can be combined arbitrarily to form optional embodiments of the present invention, which will not be described one by one here.

[0104] It should be pointed out that although the various steps in the above embodiments are described in a specific order, those skilled in the art can understand that in order to achieve the effect of the present invention, different steps do not have to be executed in such an order, they can be executed simultaneously (in parallel) or in other orders. These adjusted schemes are equivalent to the technical schemes described in the present invention, and therefore will also fall within the scope of protection of the present invention.

[0105] It is understood by those skilled in the art that the present invention implements all or part of the processes in the method of the above embodiment, and can also be completed by instructing the relevant hardware through a computer program, and the computer program can be stored in a computer-readable storage medium, and the computer program can implement the steps of the above-mentioned various method embodiments when executed by the processor. Among them, the computer program includes computer program code, and the computer program code can be in source code form, object code form, executable file or some intermediate form. The computer-readable storage medium may include: any entity or device, medium, U disk, mobile hard disk, disk, optical disk, computer memory, read-only memory, random access memory, electric carrier signal, telecommunication signal and software distribution medium, etc. that can carry the computer program code.

[0106] So far, the technical solution of the present invention has been described in conjunction with an embodiment shown in the accompanying drawings, but it is easy for those skilled in the art to understand that the protection scope of the present invention is obviously not limited to these specific embodiments. Without departing from the principle of the present invention, those skilled in the art can make equivalent changes or substitutions to the relevant technical features, and the technical solutions after these changes or substitutions will fall within the protection scope of the present invention.

Claims

1. A power parameter adjustment method, applied to a semiconductor machine, characterized in that: include: S1, obtaining the initial power supply parameter search range and optimization parameters; S2, determining a first measuring point and a second measuring point of the power parameter based on the initial power parameter search range and the optimization parameter; S3, obtaining measurement values ​​corresponding to the first measuring point and the second measuring point from a measuring device; S4, comparing the measurement values ​​corresponding to the first measuring point and the second measuring point, and narrowing the power parameter search range based on the comparison result to generate a new power parameter search range; S5, based on the new power parameter search range and the optimization parameter, re-determine the first measuring point and the second measuring point, and execute step S3 to step S4 in a loop until a preset search exit condition is met; S6, outputting the power parameter that meets the search exit condition as the target power parameter value.

2. The method according to claim 1, characterized in that: The step of determining a first measurement point and a second measurement point of the power supply parameter based on the initial power supply parameter search range and the optimization parameter comprises: When the power parameter search range is [x L ,x H ], when the optimization parameter is R, the first measuring point x is obtained based on the following formula i and the second measuring point x j : x i =x L +R×(x H -x L ), x j =x L +(1-R)×(x H -x L ), where R<0.

5.

3. The method according to claim 2, characterized in that If the first measuring point x is measured i and the second measuring point x j The corresponding measured values ​​are y i ,y j , the comparing the measurement values ​​corresponding to the first measuring point and the second measuring point, and narrowing the power supply parameter search range based on the comparison result to generate a new power supply parameter search range, includes: If y i >y j , then the new power supply parameter search range is [x L ,x j ]; If y i <y j , then the new power supply parameter search range is [x i ,x H ].

4. The method according to claim 3, characterized in that: The method further comprises: If y i >y j , then the new power supply parameter search range is [x L ,x j ], x i As a test point for a new round of search; If y i <y j , then the new power supply parameter search range is [x i ,x H ], x j As a test point for a new round of search.

5. The method according to claim 1, characterized in that The first measuring point and the second measuring point are re-determined based on the new power supply parameter search range and the optimization parameter, and the above steps are repeated until a preset search exit condition is met, including: When the power parameter search range is smaller than a preset threshold, or When the difference between the power parameter search ranges of two consecutive searches is less than a preset difference, the search ends.

6. The method according to claim 5, characterized in that The outputting the power supply parameter satisfying the search exit condition as the target power supply parameter value includes: According to the power parameter search range corresponding to the search end, the target power parameter value is obtained.

7. The method according to any one of claims 1 to 6, characterized in that: The semiconductor machine includes a plurality of power supplies. For each power supply, its power supply parameter is adjusted based on the method described in any one of claims 1 to 6 to obtain a corresponding target power supply parameter value.

8. The method according to any one of claims 1 to 6, characterized in that: The power supply parameter is a current or voltage parameter of the power supply; The measured value is an ion current intensity value.

9. A computing device, characterized in that include: at least one processor; and, a memory communicatively coupled to the at least one processor; The memory stores a computer program, and when the computer program is executed by the at least one processor, the power supply parameter adjustment method according to any one of claims 1 to 8 is implemented.

10. A computer-readable storage medium storing a plurality of program codes, characterized in that: The program code is suitable for being loaded and run by a processor to execute the power parameter adjustment method according to any one of claims 1 to 8.

11. A power parameter adjustment device for a semiconductor machine, characterized in that: include: The computing device according to claim 9; The measuring device is used to measure the measurement values ​​corresponding to the first measuring point and the second measuring point.

12. A semiconductor machine system, characterized in that: include: Semiconductor machines; The device according to claim 11.

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