Plastic package eutectic machine

Abstract

The invention discloses a plastic package eutectic machine which comprises a first wafer table and a second wafer table, the first wafer table and the second wafer table are connected through an eutectic heating table, the first wafer table comprises a first X-axis adjusting mechanism and a first Y-axis adjusting mechanism, a telescopic first ejector pin is arranged below the first wafer table, and a second ejector pin is arranged below the second wafer table. A first Z-axis adjusting mechanism is fixedly connected to the first wafer table, the output end of the first Z-axis adjusting mechanism is fixedly connected with the first ejector pin, a first welding head is connected to one side of the first wafer table, the output end of the first welding head is fixedly connected with a first swing arm, a first calibration mechanism is arranged on the first wafer table, and a first recognition camera is arranged above the first calibration mechanism. Through the arrangement of the eutectic heating table, a chip can be conveniently heated, and through the arrangement of the two wafer tables, the eutectic chip can be placed and conveyed, so that the eutectic machine can synchronously and quickly move and convey the chip and a substrate, and the eutectic efficiency of the chip is effectively improved.

Description

Technical Field

[0001] The present invention relates to the technical field of chip processing, and in particular to a plastic packaging eutectic machine. Background Art

[0002] Eutectic refers to the phenomenon that eutectic solder fuses at a relatively low temperature. The eutectic alloy changes directly from solid to liquid without going through the plastic stage. It is a balanced reaction in which a liquid generates two solids at the same time. Its melting temperature is called the eutectic temperature. Eutectic welding technology is widely used in the electronic packaging industry, such as bonding chips to substrates, bonding substrates to tube shells, tube shell capping, etc.

[0003] Wafer-level packaging is generally defined as performing most or all of the packaging and testing procedures directly on the wafer, and then cutting it into individual components. This form of packaging uses a redistribution process to allow the I / O to be distributed over the entire surface of the IC chip rather than just being limited to the narrow peripheral area of ​​the IC chip, thereby solving the electrical connection problem of high-density, fine-pitch I / O chips. The plastic encapsulation process of wafer-level packaging is to place a single die into an epoxy system plastic encapsulation compound for curing and then cut it into separate particles. The die can be packaged alone or combined with other dies or other components or functional components. The liquid molding material used in the package is a polymer material, which plays a protective role. Due to the existence of processes such as rewiring later, the plastic encapsulation compound is required to have good fluidity and low water absorption to meet reliability requirements.

[0004] However, the existing plastic encapsulation eutectic machine has a relatively simple structure, and the plastic encapsulation eutectic machine cannot move and transport the chip and the substrate synchronously and quickly, thereby affecting the eutectic efficiency of the plastic encapsulation chip. Summary of the invention

[0005] The purpose of the present invention is to solve the problem in the prior art that the eutectic machine cannot synchronously and quickly move and transport the chip and the substrate, and to propose a plastic encapsulation eutectic machine.

[0006] In order to achieve the above object, the present invention adopts the following technical solutions:

[0007] A plastic encapsulation eutectic machine, comprising a first wafer stage and a second wafer stage, the first wafer stage and the second wafer stage are connected via a eutectic heating stage, the first wafer stage comprises a first X-axis adjustment mechanism, a first Y-axis adjustment mechanism and a crystal ring, a retractable first ejector pin is provided below the first wafer stage, a first Z-axis adjustment mechanism is provided below the first ejector pin, a first welding head is connected to one side of the first wafer stage, an output end of the first welding head is fixedly connected to a first swing arm, a first calibration mechanism is provided on the first wafer stage, a first recognition camera is provided above the first calibration mechanism, and a first linear welding head is installed on one side of the first calibration mechanism via a first cam mechanism;

[0008] The second wafer stage includes a second X-axis adjustment mechanism, a second Y-axis adjustment mechanism and a wafer ring, a retractable second ejector pin is provided below the second wafer stage, a second Z-axis adjustment mechanism is provided below the second ejector pin, a second welding head is connected to one side of the second wafer stage, an output end of the second welding head is fixedly connected to a second swing arm, a second calibration mechanism is provided on the second wafer stage, a second recognition camera is provided above the second calibration mechanism, and a second linear welding head is installed on one side of the second calibration mechanism through a second cam mechanism;

[0009] A heating device is provided on the top of the eutectic heating platform, and a vacuum suction hole is also provided on the eutectic heating platform.

[0010] Preferably, a first adjustment knob corresponding to the first X-axis adjustment mechanism and the first Y-axis adjustment mechanism is provided below the first ejector pin, and a second adjustment knob corresponding to the second X-axis adjustment mechanism and the second Y-axis adjustment mechanism is provided below the second ejector pin.

[0011] Preferably, the first welding head is provided with a third Z-axis adjustment mechanism, and the first φ-axis adjustment mechanism is fixedly connected to the third Z-axis adjustment mechanism; the second welding head is provided with a fourth Z-axis adjustment mechanism, and the second φ-axis adjustment mechanism is fixedly connected to the fourth Z-axis adjustment mechanism.

[0012] Preferably, the first calibration mechanism is provided with a third X-axis adjustment mechanism and a third Y-axis adjustment mechanism, the third Y-axis adjustment mechanism is fixedly connected to a third φ-axis adjustment mechanism, and the third φ-axis adjustment mechanism is fixedly connected to a first motor; the second calibration mechanism is provided with a fourth X-axis adjustment mechanism and a fourth Y-axis adjustment mechanism, the output end of the fourth Y-axis adjustment mechanism is fixedly connected to a fourth φ-axis adjustment mechanism, and the fourth φ-axis adjustment mechanism is installed with a second motor.

[0013] Preferably, the first cam mechanism is provided with a fifth Z-axis adjustment mechanism, and the first suction nozzle is fixedly connected to the fifth Z-axis adjustment mechanism; the second cam mechanism is provided with a sixth Z-axis adjustment mechanism, and the second suction nozzle is fixedly connected to the sixth Z-axis adjustment mechanism, a fifth X-axis adjustment mechanism is provided below the first cam mechanism, and a sixth X-axis adjustment mechanism is provided below the second cam mechanism.

[0014] Preferably, the first suction nozzle and the second suction nozzle are both connected with a buffer mechanism, and an electromagnet is installed on the buffer mechanism.

[0015] Preferably, a seventh Z-axis adjustment mechanism is provided on one side of the first swing arm, a fifth φ-axis adjustment mechanism is also provided on one side of the first swing arm, an eighth Z-axis adjustment mechanism is provided on one side of the second swing arm, and a sixth φ-axis adjustment mechanism is also provided on one side of the second swing arm.

[0016] Preferably, the eutectic heating stage is provided with a heating rod and a temperature sensor, a sixth Y-axis adjustment mechanism is provided below the eutectic heating stage, and a nitrogen exporter and a hot nitrogen exporter are provided on the eutectic heating stage.

[0017] Preferably, a seventh Z-axis adjustment mechanism is provided on one side of the first swing arm, a fifth φ-axis adjustment mechanism is also provided on one side of the first swing arm, an eighth Z-axis adjustment mechanism is provided on one side of the second swing arm, and a sixth φ-axis adjustment mechanism is also provided on one side of the second swing arm.

[0018] Compared with the prior art, the advantages of the present invention are:

[0019] In the present invention, by setting up a eutectic heating table, the chip can be conveniently heated, and by setting up two wafer stages, the eutectic chip can be placed and transported, so that the eutectic machine can synchronously and quickly move and transport the chip and substrate, thereby effectively improving the eutectic efficiency of the chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 A schematic diagram of the three-dimensional structure of a plastic encapsulation eutectic machine proposed by the present invention;

[0021] Figure 2 This is a left-side structural schematic diagram of a plastic encapsulation eutectic machine proposed by the present invention.

[0022] In the figure: 1 first wafer stage, 2 second wafer stage, 3 eutectic heating stage, 4 first X-axis adjustment mechanism, 5 first Y-axis adjustment mechanism, 6 first ejector, 7 first Z-axis adjustment mechanism, 8 first welding head, 9 first swing arm, 10 vacuum suction hole, 11 first recognition camera, 12 first cam mechanism, 13 first linear welding head, 14 second X-axis adjustment mechanism, 15 second Y-axis adjustment mechanism, 16 second ejector, 17 second Z-axis adjustment mechanism, 18 second welding head, 19 second swing arm, 20 second calibration mechanism, 21 second recognition camera, 22 second cam mechanism, 23 second linear welding head, 24 heating device, 25 solid crystal stage, 26 working box, 27 belt, 28 third ejector, 29 point Glue welding head, 30 glue tray, 31 loading and unloading mechanism, 32 first adjusting knob, 33 second adjusting knob, 34 third Z-axis adjusting mechanism, 35 first φ-axis adjusting mechanism, 36 fourth Z-axis adjusting mechanism, 37 second φ-axis adjusting mechanism, 38 third Y-axis adjusting mechanism, 39 third φ-axis adjusting mechanism, 40 first motor, 41 fourth Y-axis adjusting mechanism, 42 fourth φ-axis adjusting mechanism, 43 second motor, 44 fifth Z-axis adjusting mechanism, 45 first suction nozzle, 46 sixth Z-axis adjusting mechanism, 47 second suction nozzle, 48 buffer mechanism, 49 electromagnet, 50 heating rod, 51 temperature sensor, 52 fifth X-axis adjusting mechanism, 53 sixth Y-axis adjusting mechanism, 54 seventh Z-axis adjusting mechanism. DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all the embodiments.

[0024] Reference Figure 1-2 As shown, a plastic encapsulation eutectic machine comprises a first wafer stage 1 and a second wafer stage 2, wherein the first wafer stage 1 and the second wafer stage 2 are connected via a eutectic heating stage 3, the first wafer stage 1 comprises a first X-axis adjustment mechanism 4, a first Y-axis adjustment mechanism 5 and a crystal ring, a retractable first ejector pin 6 is provided below the first wafer stage 1, a first Z-axis adjustment mechanism 7 is provided below the first ejector pin 6, a first welding head 8 is connected to one side of the first wafer stage 1, a first swing arm 9 is fixedly connected to the output end of the first welding head 8, a first calibration mechanism is provided on the first wafer stage 1, a first recognition camera 11 is provided above the first calibration mechanism, and a first linear welding head 13 is installed on one side of the first calibration mechanism via a first cam mechanism 12;

[0025] In this embodiment, the second wafer stage 2 includes a second X-axis adjustment mechanism 14, a second Y-axis adjustment mechanism 15 and a crystal ring. A retractable second ejector pin 16 is provided below the second wafer stage 2. A second Z-axis adjustment mechanism 17 is provided below the second ejector pin 16. A second welding head 18 is connected to one side of the second wafer stage 2. A second swing arm 19 is fixedly connected to the output end of the second welding head 18. A second calibration mechanism 20 is provided on the second wafer stage 2. A second recognition camera 21 is provided above the second calibration mechanism 20. A second linear welding head 23 is installed on one side of the second calibration mechanism through a second cam mechanism 22.

[0026] In this embodiment, a heating device 24 is disposed on the top of the eutectic heating platform 3 , and a vacuum suction hole 10 is also disposed on the eutectic heating platform 3 .

[0027] In this embodiment, a first adjusting knob 32 corresponding to the first X-axis adjusting mechanism 4 and the first Y-axis adjusting mechanism 5 is provided below the first ejector pin 6 , and a second adjusting knob 33 corresponding to the second X-axis adjusting mechanism 14 and the second Y-axis adjusting mechanism 15 is provided below the second ejector pin 16 .

[0028] In this embodiment, the first welding head 8 is provided with a third Z-axis adjustment mechanism 34, and the first φ-axis adjustment mechanism 35 is fixedly connected to the third Z-axis adjustment mechanism 34; the second welding head 18 is provided with a fourth Z-axis adjustment mechanism 36, and the second φ-axis adjustment mechanism 37 is fixedly connected to the fourth Z-axis adjustment mechanism 36.

[0029] In this embodiment, the first calibration mechanism is provided with a third X-axis adjustment mechanism and a third Y-axis adjustment mechanism 38, the third Y-axis adjustment mechanism 38 is fixedly connected to a third φ-axis adjustment mechanism 39, and the third φ-axis adjustment mechanism 39 is fixedly connected to a first motor 40; the second calibration mechanism 20 is provided with a fourth X-axis adjustment mechanism and a fourth Y-axis adjustment mechanism 41, the output end of the fourth Y-axis adjustment mechanism 41 is fixedly connected to a fourth φ-axis adjustment mechanism 42, and the fourth φ-axis adjustment mechanism 42 is installed with a second motor 43.

[0030] In this embodiment, a fifth Z-axis adjustment mechanism 44 is provided on the first cam mechanism 12, and a first suction nozzle 45 is fixedly connected to the fifth Z-axis adjustment mechanism 44; a sixth Z-axis adjustment mechanism 46 is provided on the second cam mechanism 22, and a second suction nozzle 47 is fixedly connected to the sixth Z-axis adjustment mechanism 46; a fifth X-axis adjustment mechanism 52 is provided below the first cam mechanism 12, and a sixth X-axis adjustment mechanism 56 is provided below the second cam mechanism 22.

[0031] In this embodiment, the eutectic heating stage 3 is provided with a heating rod 50 and a temperature sensor 51 , a sixth Y-axis adjustment mechanism 53 is provided below the eutectic heating stage 3 , and a nitrogen output device and a hot nitrogen output device are provided on the eutectic heating stage 3 .

[0032] In this embodiment, a seventh Z-axis adjustment mechanism is provided on one side of the first swing arm 9, a fifth φ-axis adjustment mechanism is also provided on one side of the first swing arm 9, an eighth Z-axis adjustment mechanism is provided on one side of the second swing arm 19, and a sixth φ-axis adjustment mechanism is also provided on one side of the second swing arm 19.

[0033] Working process: Take a chip from the first wafer stage 1 and the second wafer stage 2, place them together on the eutectic heating stage 3 in the middle, embed them together, and then return from the original structure on one side of the chip. The wafer stage supports X-axis and Y-axis movement, and the crystal ring supports manual angle adjustment. If the angle of the blue film placed on it is not correct, the angle of the blue film can be manually adjusted when the crystal ring is working, and then the chips are picked up from the blue film one by one and in rows. The upper plane of the ejector mechanism vacuum adsorbs the blue film, and then the ejector pushes it up, and the suction nozzle adsorbs it at the same time. The ejectors move up and down in the Z-axis direction.

[0034] There is a camera positioned above the workbench. The camera is vertical and fixed in position. There is also a 180° horizontal swinging mechanical arm between the camera and the workbench, which is the swing arm welding head. The swing arm welding head cannot be moved. It is fixed to swing 180° horizontally between two points. Its function is to pick up the chip from the crystal ring blue film and place it on the calibration table. In addition to supporting a horizontal 180° swing in the φ axis direction, the swing arm welding head also supports up and down movement in the Z axis direction, because it moves up and down when picking and placing.

[0035] The swing arm and welding head pick up the chip through the vacuum nozzle. After the single chip on the crystal ring is ejected by the ejector pin, the vacuum nozzle on the swing arm will absorb the chip and then move it to the first calibration table.

[0036] When picking, the vertical camera, the vacuum nozzle on the welding head, the single chip on the crystal ring and the ejector pin on the crystal ring are in a vertical line. When picking, the workbench moves along the X-axis or Y-axis direction with the crystal ring with the adjusted angle. Specifically, the single chip to be picked up follows the workbench to the bottom of the camera, and then is picked up by the vacuum nozzle of the swing arm welding head. The chips on the blue film of a crystal ring will be picked up one by one and row by row.

[0037] When picking, the vertical camera, the second swing arm 19, the second suction nozzle 28, the single chip on the crystal ring and the second ejector pin 16 on the crystal ring are in a vertical line. When picking, the workbench moves along the X-axis or Y-axis direction with the crystal ring with the adjusted angle. Specifically, the single chip to be picked up follows the workbench to the bottom of the camera, and then the second swing arm 19 drives the second suction nozzle 28 to pick up. The chips on the blue film of a crystal ring will be picked up one by one and row by row.

[0038] The chip is placed on the calibration table. If you want to calibrate the position, there is also a vertical fixed and immovable camera above the calibration table for calibration. There are vacuum adsorption holes on the calibration table to firmly adsorb the chip on the calibration table. The calibration table supports the movement of the X-axis, Y-axis, and φ-axis angles. The chip on the calibration table must be moved to the frame set by the software. After calibration, the chip on the calibration table is moved to the eutectic heating table 3 through the vacuum suction nozzle. The linear arm welding head supports movement in the X-axis direction and the Z-axis up and down direction, and moves back and forth from the calibration table to the eutectic heating table on a fixed route. After the linear arm welding head uses the vacuum suction nozzle to adsorb the chip from the calibration table, it moves to the eutectic heating table 3.

[0039] The chip is placed on the second calibration mechanism 20. If you want to calibrate the position, there is also a vertical fixed and immovable camera on the second calibration mechanism 20 for calibration. There are vacuum adsorption holes on the second calibration mechanism 20 to firmly adsorb the chip on the second calibration mechanism 20. The second calibration mechanism 20 supports the movement of the X-axis, Y-axis, and φ-axis angles. The chip on the second calibration mechanism 20 must be moved to the frame set by the software. After calibration, the chip on the second calibration mechanism 20 is moved to the eutectic heating table 3 through the second suction nozzle 28. The second swing arm 19 supports movement in the X-axis direction and the Z-axis up and down direction, and is fixed from point A to point B. After the second swing arm 19 uses the second suction nozzle 28 to adsorb the chip from the second calibration mechanism 20, it moves to the eutectic heating table 3.

[0040] The symmetrical structure of the eutectic machine will place the large chip first, and then the small chip. The two chips are stacked up and down together, so the placement force must be controlled when stacking to prevent the chip from being squeezed and damaged. The control of the placement force is achieved through the electromagnetic device on the linear arm. The eutectic heating table 3 has three large, medium and small vacuum suction holes, arranged in a row in the Y-axis direction, which can be suitable for chips of different sizes. Before eutectic formation, a vacuum suction hole is selected and positioned, so the eutectic heating table 3 can be moved in the Y-axis direction. After the large chip is placed on the eutectic heating table 3, the heating table will release heated nitrogen to the upper surface of the large chip. The heat will melt the gold and tin on the upper surface of the large chip. Nitrogen is an inert gas that can prevent the oxidation of gold and tin. After the gold and tin on the upper surface of the large chip are melted, the small chip is placed, and the two can be fused together.

[0041] The eutectic heating table 3 has two cameras, one is the vertical positioning camera on the top, and the other is the monitoring camera for monitoring the eutectic process. The positioning camera is used to position the heating table when it moves along the Y-axis direction. After eutecticization, the side that picks up the large chip will return the eutectic chip along the original path. First, the linear arm welding head picks up the eutectic chip from the eutectic heating table 3, moves it to the calibration table, and then the swing arm welding head picks it up and places it on the crystal ring blue film.

[0042] In the present invention, by setting up the eutectic heating table 3, the chip can be conveniently heated, and by setting up two wafer stages, the eutectic chip can be placed and transported, so that the eutectic machine can synchronously and quickly move and transport the chip and the substrate, thereby effectively improving the eutectic efficiency of the chip.

[0043] The above description is only a preferred specific implementation manner of the present invention, but the protection scope of the present invention is not limited thereto. Any technician familiar with the technical field can make equivalent replacements or changes according to the technical scheme and inventive concept of the present invention within the technical scope disclosed by the present invention, which should be covered by the protection scope of the present invention.

Claims

1. A plastic encapsulation eutectic machine, comprising a first wafer stage (1) and a second wafer stage (2), characterized in that: The first wafer stage (1) and the second wafer stage (2) are connected via a eutectic heating stage (3); the first wafer stage (1) comprises a first X-axis adjustment mechanism (4), a first Y-axis adjustment mechanism (5) and a crystal ring; a retractable first ejector pin (6) is provided below the first wafer stage (1); a first Z-axis adjustment mechanism (7) is provided below the first ejector pin (6); a first welding head (8) is connected to one side of the first wafer stage (1); an output end of the first welding head (8) is fixedly connected to a first swing arm (9); a first calibration mechanism is provided on the first wafer stage (1); a first recognition camera (11) is provided above the first calibration mechanism; and a first linear welding head (13) is installed on one side of the first calibration mechanism via a first cam mechanism (12); The second wafer stage (2) comprises a second X-axis adjustment mechanism (14), a second Y-axis adjustment mechanism (15) and a wafer ring; a retractable second ejector pin (16) is provided below the second wafer stage (2); a second Z-axis adjustment mechanism (17) is provided below the second ejector pin (16); a second welding head (18) is connected to one side of the second wafer stage (2); an output end of the second welding head (18) is fixedly connected to a second swing arm (19); a second calibration mechanism (20) is provided on the second wafer stage (2); a second recognition camera (21) is provided above the second calibration mechanism (20); and a second linear welding head (23) is installed on one side of the second calibration mechanism via a second cam mechanism (22); A heating device (24) is provided on the top of the eutectic heating platform (3), and a vacuum suction hole (10) is also provided on the eutectic heating platform (3).

2. The plastic encapsulation eutectic machine according to claim 1, characterized in that: A first adjustment knob (32) corresponding to the first X-axis adjustment mechanism (4) and the first Y-axis adjustment mechanism (5) is provided below the first ejector pin (6), and a second adjustment knob (33) corresponding to the second X-axis adjustment mechanism (14) and the second Y-axis adjustment mechanism (15) is provided below the second ejector pin (16).

3. The plastic packaging eutectic machine according to claim 1, characterized in that: The first welding head (8) is provided with a third Z-axis adjustment mechanism (34), and the third Z-axis adjustment mechanism (34) is fixedly connected to a first φ-axis adjustment mechanism (35); the second welding head (18) is provided with a fourth Z-axis adjustment mechanism (36), and the fourth Z-axis adjustment mechanism (36) is fixedly connected to a second φ-axis adjustment mechanism (37).

4. The plastic packaging eutectic machine according to claim 1, characterized in that: The first calibration mechanism is provided with a third X-axis adjustment mechanism and a third Y-axis adjustment mechanism (38), the third Y-axis adjustment mechanism (38) is fixedly connected to a third φ-axis adjustment mechanism (39), and the third φ-axis adjustment mechanism (39) is fixedly connected to a first motor (40); the second calibration mechanism (20) is provided with a fourth X-axis adjustment mechanism and a fourth Y-axis adjustment mechanism (41), the output end of the fourth Y-axis adjustment mechanism (41) is fixedly connected to a fourth φ-axis adjustment mechanism (42), and the fourth φ-axis adjustment mechanism (42) is mounted with a second motor (43).

5. The plastic packaging eutectic machine according to claim 1, characterized in that: The first cam mechanism (12) is provided with a fifth Z-axis adjustment mechanism (44), and a first suction nozzle (45) is fixedly connected to the fifth Z-axis adjustment mechanism (44); the second cam mechanism (22) is provided with a sixth Z-axis adjustment mechanism (46), and a second suction nozzle (47) is fixedly connected to the sixth Z-axis adjustment mechanism (46); a fifth X-axis adjustment mechanism (52) is provided below the first cam mechanism (12), and a sixth X-axis adjustment mechanism (56) is provided below the second cam mechanism (22).

6. The plastic packaging eutectic machine according to claim 5, characterized in that: The first suction nozzle (45) and the second suction nozzle (47) are both connected to a buffer mechanism (48), and an electromagnet (49) is installed on the buffer mechanism (48).

7. The plastic packaging eutectic machine according to claim 1, characterized in that: The eutectic heating platform (3) is provided with a heating rod (50) and a temperature sensor (51), a sixth Y-axis adjustment mechanism (53) is provided below the eutectic heating platform (3), and a nitrogen output device and a hot nitrogen output device are provided on the eutectic heating platform (3).

8. The plastic packaging eutectic machine according to claim 1, characterized in that: A seventh Z-axis adjustment mechanism is provided on one side of the first swing arm (9), a fifth φ-axis adjustment mechanism is also provided on one side of the first swing arm (9), an eighth Z-axis adjustment mechanism is provided on one side of the second swing arm (19), and a sixth φ-axis adjustment mechanism is also provided on one side of the second swing arm (19).

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