Western shingle wave surface acoustic wave resonator, bare chip and communication assembly

Abstract

The invention relates to the field of sound wave resonance, in particular to a Sixhu wave surface acoustic wave resonator, a bare chip and a communication component, which sequentially comprise a substrate, a directional energy conducting structure, a first piezoelectric layer, a patterned second piezoelectric layer and an interdigital electrode from bottom to top, the first piezoelectric layer and / or the second piezoelectric layer comprises at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer; the directional energy conducting structure comprises a cavity and / or a Bragg structure layer. According to the invention, the two piezoelectric layer materials are limited, so that the Western shashlik wave surface acoustic wave resonator can be directly integrated with other bulk acoustic wave resonators on the same bare chip, and the leakage of the energy of Western shashlik waves towards the direction of the substrate is reduced; the space occupation of the composite resonator formed by the surface acoustic wave resonator and the bulk acoustic wave resonator is greatly reduced, the electromechanical coupling coefficient of the resonator is improved, and the output power of the resonator is increased.

Description

Technical Field

[0001] The invention relates to the field of acoustic wave resonance, and in particular to a Sishava wave surface acoustic wave resonator, a bare chip and a communication component. Background Art

[0002] With the continuous development of communication technology, more and more devices need to exchange information with other devices, and the miniaturization of devices has become an inevitable development goal, which also puts higher requirements on mobile communication devices.

[0003] Using multiple filter technologies in the same communication equipment will inevitably increase the size of the device. How to reduce the size of the device has become an urgent problem to be solved. In traditional structures, SAW (surface acoustic wave) filters generally use lithium niobate, lithium tantalate, or even zinc oxide as the piezoelectric layer, while BAW (bulk acoustic wave) filters generally use aluminum nitride or scandium-doped aluminum nitride as the piezoelectric layer. The difference in piezoelectric materials limits the simultaneous production of SAW and BAW filters on the same wafer. The size of SAW and BAW filters produced separately in the final use must be larger than the structure in which SAW and BAW filters are produced on the same wafer. Therefore, there is an urgent need for a higher-performance resonator that can be highly integrated with SAW or BAW filters, such as being produced on the same wafer.

[0004] Therefore, how to improve the structure of the resonator to achieve the miniaturization of the filter without hindering the miniaturization of the filter and improve the performance of the filter at the same time is an urgent problem to be solved by those skilled in the art. Summary of the invention

[0005] The object of the present invention is to provide a Sishawa surface acoustic wave resonator, a bare chip and a communication component to solve the problem in the prior art that the performance of the resonator cannot be improved without hindering the miniaturization of the resonator.

[0006] In order to solve the above technical problems, the present invention provides a Sishavar surface acoustic wave resonator, which comprises, from bottom to top, a substrate, a directional energy guiding structure, a first piezoelectric layer, a patterned second piezoelectric layer and interdigital electrodes;

[0007] The first piezoelectric layer and / or the second piezoelectric layer comprises at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer;

[0008] The directional energy guiding structure includes a cavity and / or a Bragg structure layer.

[0009] Optionally, in the Sishavar surface acoustic wave resonator, the directional energy guiding structure only includes the cavity;

[0010] The contact surface between the substrate and the first piezoelectric layer comprises a groove, and the groove and the first piezoelectric layer enclose the cavity.

[0011] Optionally, in the Sishavar wave surface acoustic wave resonator, the Bragg structure layer includes a plurality of first acoustic impedance layers and second acoustic impedance layers that are alternately arranged; the acoustic impedance of the first acoustic impedance layer is higher than the acoustic impedance of the second acoustic impedance layer;

[0012] The number of acoustic impedance layers included in the Bragg structure layer ranges from 2 to 12, including end points.

[0013] Optionally, in the Xishawa wave surface acoustic wave resonator, a resonant conductive layer is also included;

[0014] The resonant conductive layer is disposed between the directional energy conducting structure and the first piezoelectric layer.

[0015] Optionally, in the Sishavar surface acoustic wave resonator, the orthographic projections of the second piezoelectric layer and the interdigital electrodes on the substrate completely overlap or partially overlap.

[0016] Optionally, in the Xishawa wave surface acoustic wave resonator, a reflection grating is also included;

[0017] The reflection grid is arranged on both sides of the interdigital electrode along the first direction;

[0018] The first direction is the arrangement direction of the interdigital electrodes.

[0019] Optionally, the Sishavar surface acoustic wave resonator further includes a silicon dioxide layer, and the silicon dioxide layer is arranged between the substrate and the directional energy guiding structure.

[0020] Optionally, in the Sisava surface acoustic wave resonator, the first piezoelectric layer and the second piezoelectric layer are made of the same material.

[0021] A bare chip comprises a bulk acoustic wave resonator and any one of the above-mentioned Sishavar surface acoustic wave resonators.

[0022] A communication component, comprising a bare chip as described in any one of the above.

[0023] The Xishawa wave surface acoustic wave resonator provided by the present invention includes, from bottom to top, a substrate, a directional energy guiding structure, a first piezoelectric layer, a patterned second piezoelectric layer and an interdigital electrode; the first piezoelectric layer and / or the second piezoelectric layer include at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer; the directional energy guiding structure includes a cavity and / or a Bragg structure layer. The present invention excites the surface acoustic wave of the Xishawa wave through the first piezoelectric layer, the second piezoelectric layer and the interdigital electrode, and at the same time limits the materials of the two piezoelectric layers, so that the Xishawa wave surface acoustic wave resonator can be directly integrated with other bulk acoustic wave resonators on the same bare chip, and inserts a directional energy guiding structure under the first piezoelectric layer, which reduces the leakage of the Xishawa wave energy toward the substrate, and concentrates more Xishawa wave energy into the effective area of ​​the resonator, thereby greatly reducing the space occupation of the composite resonator composed of the surface acoustic wave resonator and the bulk acoustic wave resonator, while improving the electromechanical coupling coefficient of the resonator and increasing the output power of the resonator. The present invention also provides a bare chip and a communication component having the above beneficial effects. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] In order to more clearly illustrate the embodiments of the present invention or the technical solutions of the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0025] FIG1 is a schematic structural diagram of a specific embodiment of a Sisawa wave surface acoustic wave resonator provided by the present invention;

[0026] FIG2 is a schematic structural diagram of another specific embodiment of the Sishawar surface acoustic wave resonator provided by the present invention;

[0027] FIG3 is a top view of the structure of a specific embodiment of the Sishawar wave surface acoustic wave resonator provided by the present invention;

[0028] FIG4 is a schematic structural diagram of another specific embodiment of the Sisawa wave surface acoustic wave resonator provided by the present invention;

[0029] FIG5 is a schematic structural diagram of another specific embodiment of the Sishawar wave surface acoustic wave resonator provided by the present invention;

[0030] FIG6 is a graph showing the relationship between impedance and frequency of a specific embodiment of the Sishawar surface acoustic wave resonator provided by the present invention;

[0031] FIG. 7 is a graph showing the relationship between impedance and frequency of another specific implementation of the Sishavar surface acoustic wave resonator provided by the present invention.

[0032] 110 - substrate, 120 - directional energy guiding structure, 130 - first piezoelectric layer, 140 - second piezoelectric layer, 150 - interdigital electrodes, 160 - reflection grid, 170 - bus bar, 180 - resonant conductive layer, 121 - first acoustic impedance layer, 122 - second acoustic impedance layer, DETAILED DESCRIPTION

[0033] In order to enable those skilled in the art to better understand the scheme of the present invention, the present invention is further described in detail below in conjunction with the accompanying drawings and specific implementation methods. Obviously, the described embodiments are only part of the embodiments of the present invention, rather than all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present invention.

[0034] The core of the present invention is to provide a Sishavar surface acoustic wave resonator, a structural schematic diagram of a specific embodiment of which is shown in FIG1 , referred to as specific embodiment 1, which includes, from bottom to top, a substrate 110, a directional energy conducting structure 120, a first piezoelectric layer 130, a patterned second piezoelectric layer 140 and interdigital electrodes 150;

[0035] The first piezoelectric layer 130 and / or the second piezoelectric layer 140 includes at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer;

[0036] The directional energy guiding structure 120 includes a cavity and / or a Bragg structure layer.

[0037] The orthographic projections of the second piezoelectric layer 140 and the interdigital electrodes 150 on the substrate 110 may be completely overlapped or partially overlapped, which can be selected according to actual conditions. Whether to completely overlap or not can improve the setting flexibility of the Sishavar surface acoustic wave resonator and enhance the versatility of the present invention.

[0038] Disposing a directional energy conducting structure 120 below the piezoelectric layer and the interdigital electrodes 150 can reduce the energy leakage of the Sisava wave toward the substrate 110 .

[0039] As a specific implementation, the directional energy guiding structure 120 only includes the cavity;

[0040] The contact surface between the substrate 110 and the first piezoelectric layer 130 includes a groove, and the groove and the first piezoelectric layer 130 form the cavity.

[0041] In this specific embodiment, the directional energy guiding structure 120 is defined as the cavity, as shown in FIG1 , and a composition method of the cavity is given, that is, the first piezoelectric layer 130 covers the groove on the substrate 110 to form the cavity. This composition method greatly reduces the production cost and improves the production efficiency.

[0042] As another specific implementation, the Bragg structure layer includes a plurality of first acoustic impedance layers 121 and second acoustic impedance layers 122 that are alternately arranged; the acoustic impedance of the first acoustic impedance layer 121 is higher than the acoustic impedance of the second acoustic impedance layer 122;

[0043] The number of acoustic impedance layers included in the Bragg structure layer ranges from 2 to 12, including end points.

[0044] Please refer to FIG. 2 . In this specific embodiment, the directional energy guiding structure 120 is defined as a Bragg structure layer, which can also reduce the energy leakage of the Sisava wave to the substrate 110, further improving the performance. In addition, the Bragg structure layer may include 2 to 12 layers of acoustic impedance layers alternately placed, including endpoint values, such as any one of 2.0 layers, 8.0 layers, or 12.0 layers. Of course, the acoustic impedance layer is the total number of layers of the first acoustic impedance layer 121 and the second acoustic impedance layer 122, that is, the total number of layers of the first acoustic impedance layer 121 and the second acoustic impedance layer 122 ranges from 2 to 12 layers.

[0045] Furthermore, the Xishawa surface acoustic wave resonator further includes a silicon dioxide layer, and the silicon dioxide layer is arranged between the substrate 110 and the directional energy guiding structure 120. The silicon dioxide layer is arranged between the substrate 110 and the directional energy guiding structure 120, which can significantly reduce the temperature drift of the Xishawa surface acoustic wave resonator during operation, thereby greatly improving the operating stability of the Xishawa surface acoustic wave resonator and the accuracy of transmitting sound waves.

[0046] Specifically, the material of the first acoustic impedance layer 121 includes at least one of aluminum nitride, silicon nitride, silicon carbide, molybdenum, and tungsten; the material of the second acoustic impedance layer 122 includes at least one of silicon oxide, aluminum, silicon, and zinc oxide; the material of the interdigitated electrode 150 includes at least one of aluminum, tungsten, molybdenum, gold, copper, and silver; the material of the substrate 110 includes at least one of silicon, silicon carbide, and sapphire.

[0047] In addition, the Xishawa surface acoustic wave resonator further includes a reflection grating 160;

[0048] The reflection grid 160 is disposed on both sides of the interdigital electrode 150 along the first direction;

[0049] The first direction is the arrangement direction of the interdigital electrodes 150 .

[0050] Please refer to Figure 3. The reflective grating 160 is disposed on both sides of the interdigital electrode to reflect the vibration energy of the first piezoelectric layer 130 and the second piezoelectric layer 140, further improving the suppression of lateral leakage of acoustic waves of the Xishawa surface acoustic wave resonator and improving the Q value (quality factor). Figure 3 is a top view of the interdigital electrode 150 and the reflective grating 160. The interdigital electrodes 150 on the same side of the figure are connected in series by the bus bar 170. Of course, only part of the electrodes are shown in the figure, and more pairs of interdigital electrodes 150 and reflective grating 160 structures may be included in actual production.

[0051] In addition, the first piezoelectric layer 130 and / or the second piezoelectric layer 140 include at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer, and a piezoelectric ceramic layer. The above material layers have a bottomed-out production cost, and the processing technology is relatively mature, which can improve production efficiency. Of course, other material layers can also be selected according to actual conditions, and the present invention will not be repeated here.

[0052] Furthermore, the first piezoelectric layer 130 and the second piezoelectric layer 140 are the same material layer. The first piezoelectric layer 130 and the second piezoelectric layer 140 are defined as the same material layer. Taking the above as an example, the first piezoelectric layer 130 and the second piezoelectric layer 140 are both the piezoelectric material layer, such as aluminum nitride, scandium-doped aluminum nitride. By defining the two piezoelectric layers as the same material layer, the conversion of the production environment of the two piezoelectric layers during the production process can be abandoned, which can greatly simplify the production process and improve production efficiency.

[0053] The Sishawar wave surface acoustic wave resonator provided by the present invention includes, from bottom to top, a substrate 110, a directional energy conducting structure 120, a first piezoelectric layer 130, a patterned second piezoelectric layer 140 and an interdigitated electrode 150; the first piezoelectric layer 130 and / or the second piezoelectric layer 140 include at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer; the directional energy conducting structure 120 includes a cavity and / or a Bragg structure layer. The present invention excites the surface acoustic wave of the Xishawar wave through the first piezoelectric layer 130, the second piezoelectric layer 140 and the interdigital electrode 150, and at the same time limits the materials of the two piezoelectric layers, so that the Xishawar wave surface acoustic wave resonator can be directly integrated with other bulk acoustic wave resonators on the same bare chip, and a directional energy guide structure 120 is inserted under the first piezoelectric layer 130, thereby reducing the leakage of the Xishawar wave energy toward the substrate 110 and concentrating more Xishawar wave energy into the effective area of ​​the resonator, thereby greatly reducing the space occupied by the composite resonator composed of the surface acoustic wave resonator and the bulk acoustic wave resonator, while improving the electromechanical coupling coefficient of the resonator and increasing the output power of the resonator.

[0054] On the basis of the specific implementation mode 1, the Sishawar wave surface acoustic wave resonator is further improved to obtain the specific implementation mode 2, and its corresponding structural schematic diagram is shown in Figures 4 and 5, which includes a substrate 110, a directional energy guide structure 120, a first piezoelectric layer 130, a patterned second piezoelectric layer 140 and interdigital electrodes 150 from bottom to top;

[0055] The first piezoelectric layer 130 and / or the second piezoelectric layer 140 includes at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer;

[0056] The directional energy guiding structure 120 includes a cavity and / or a Bragg structure layer;

[0057] Also includes a resonant conductive layer 180;

[0058] The resonant conductive layer 180 is disposed between the directional energy guiding structure 120 and the first piezoelectric layer 130 .

[0059] The difference between this specific embodiment and the above specific embodiment is that in this specific embodiment, the resonant conductive layer 180 is further added to the Xishawa wave surface acoustic wave resonator, and the remaining structures are the same as those in the above specific embodiment, which will not be elaborated here.

[0060] In this preferred embodiment, the resonant conductive layer 180 is inserted between the directional energy conducting structure 120 and the first piezoelectric layer 130. The interdigitated electrode 150 forms a potential difference with the resonant conductive layer 180 under an external voltage. This potential difference amplifies the vibration effect of the piezoelectric layer between the interdigitated electrode 150 and the resonant conductive layer 180, thereby further improving the electromechanical coupling coefficient, and further improving the output power of the Xishawa wave surface acoustic wave resonator.

[0061] Please refer to FIG. 4 and FIG. 5 , which are schematic structural diagrams of specific implementations of the directional energy guiding structure 120 being the cavity and the Bragg structure layer.

[0062] Furthermore, the resonant conductive layer 180 is a metal layer. The metal layer not only has good conductivity, but also has a suitable acoustic impedance property to match the acoustic impedance property of the piezoelectric layer, thereby achieving less leakage of sound waves, thereby ensuring the vibration output power of the Xishawa wave surface acoustic wave resonator.

[0063] Specifically, the material of the resonant conductive layer 180 includes at least one of aluminum, tungsten, molybdenum, gold, copper, and silver.

[0064] Please refer to Figure 6, which is a schematic diagram of the relationship between frequency (Frequency) and impedance (Impedance) of the embodiments using cavities in Specific Embodiment 1 and Specific Embodiment 2 of the present invention, wherein the solid line corresponds to Specific Embodiment 1, and the dotted line corresponds to Specific Embodiment 2. It can be seen from Figure 6 that the electromechanical coupling coefficient of the present invention is larger, the electromechanical coupling coefficient of Specific Embodiment 1 is 16.1%, and the electromechanical coupling coefficient of Specific Embodiment 2 is 19.5%, both of which are much larger than the 8% of the traditional surface acoustic wave SAW, and the present invention can also prepare filters with a larger bandwidth. Figure 7 is a schematic diagram of the relationship between frequency (Frequency) and impedance (Impedance) of the embodiment using the Bragg structure layer in Specific Embodiment 2. It can be seen from Figure 7 that the electromechanical coupling coefficient corresponding to the embodiment using the Bragg structure layer in Specific Embodiment 2 is 15.5%, which is also much larger than the 8% of the traditional surface acoustic wave SAW.

[0065] The present invention also provides a bare chip, the bare chip includes a bulk acoustic wave resonator and any of the above-mentioned Xishawa wave surface acoustic wave resonators. The Xishawa wave surface acoustic wave resonator provided by the present invention includes, from bottom to top, a substrate 110, a directional energy conducting structure 120, a first piezoelectric layer 130, a patterned second piezoelectric layer 140 and an interdigital electrode 150; the first piezoelectric layer 130 and / or the second piezoelectric layer 140 include at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer; the directional energy conducting structure 120 includes a cavity and / or a Bragg structure layer. The present invention excites the surface acoustic wave of the Xishawar wave through the first piezoelectric layer 130, the second piezoelectric layer 140 and the interdigital electrode 150, and at the same time limits the materials of the two piezoelectric layers, so that the Xishawar wave surface acoustic wave resonator can be directly integrated with other bulk acoustic wave resonators on the same bare chip, and a directional energy guide structure 120 is inserted under the first piezoelectric layer 130, thereby reducing the leakage of the Xishawar wave energy toward the substrate 110 and concentrating more Xishawar wave energy into the effective area of ​​the resonator, thereby greatly reducing the space occupied by the composite resonator composed of the surface acoustic wave resonator and the bulk acoustic wave resonator, while improving the electromechanical coupling coefficient of the resonator and increasing the output power of the resonator.

[0066] Preferably, the first piezoelectric material layer and the second piezoelectric material layer included in the Xishawa wave surface acoustic wave resonator are at least one of an aluminum nitride layer and a scandium-doped aluminum nitride layer;

[0067] The Xishawa surface acoustic wave resonator and the bulk acoustic wave resonator are arranged on the same bare chip, and further preferably, the piezoelectric material layers of the Xishawa surface acoustic wave resonator and the bulk acoustic wave resonator are prepared in the same process step.

[0068] The current use environment usually requires the communication equipment to support communication in multiple frequency bands. In frequency division duplex (FDD), communication in one frequency band requires a duplexer composed of at least two filters, and each frequency band requires a corresponding RF front-end device. To realize all filters, multiple technologies must be used, such as surface acoustic wave SAW filters, bulk acoustic wave BAW filters, integrated passive device IPD filters, low temperature co-fired ceramic LTCC filters, etc. The use of multiple filter technologies in the same device inevitably increases the size of the device. How to reduce the size of the duplexer and even the multiplexer has become an urgent problem to be solved. In the traditional structure, SAW filters generally use lithium niobate, lithium tantalate, or even zinc oxide as the piezoelectric layer, while BAW filters generally use aluminum nitride or scandium-doped aluminum nitride as the piezoelectric layer. The difference in piezoelectric materials limits the simultaneous production of SAW and BAW filters on the same wafer. The size of the SAW and BAW filters produced separately when finally used must be larger than the structure in which the SAW and BAW filters are produced on the same wafer. In the present preferred embodiment, by changing the piezoelectric layer material of the traditional SAW structure from lithium tantalate, lithium niobate or zinc oxide to aluminum nitride and scandium-doped aluminum nitride, synchronization with the piezoelectric layer of the bulk acoustic wave device BAW is achieved, and then SAW and BAW can be prepared and processed on the same wafer, which greatly simplifies the production process of communication equipment and improves production efficiency.

[0069] The present invention also provides a communication component, which includes a bare chip as described in any one of the above. The Sishavar surface acoustic wave resonator provided by the present invention includes, from bottom to top, a substrate 110, a directional energy conducting structure 120, a first piezoelectric layer 130, a patterned second piezoelectric layer 140 and an interdigitated electrode 150; the first piezoelectric layer 130 and / or the second piezoelectric layer 140 include at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer; the directional energy conducting structure 120 includes a cavity and / or a Bragg structure layer. The present invention excites the surface acoustic wave of the Xishawar wave through the first piezoelectric layer 130, the second piezoelectric layer 140 and the interdigital electrode 150, and at the same time limits the materials of the two piezoelectric layers, so that the Xishawar wave surface acoustic wave resonator can be directly integrated with other bulk acoustic wave resonators on the same bare chip, and a directional energy guide structure 120 is inserted under the first piezoelectric layer 130, thereby reducing the leakage of the Xishawar wave energy toward the substrate 110 and concentrating more Xishawar wave energy into the effective area of ​​the resonator, thereby greatly reducing the space occupied by the composite resonator composed of the surface acoustic wave resonator and the bulk acoustic wave resonator, while improving the electromechanical coupling coefficient of the resonator and increasing the output power of the resonator.

[0070] In this specification, each embodiment is described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the embodiments can be referred to each other. For the device disclosed in the embodiment, since it corresponds to the method disclosed in the embodiment, the description is relatively simple, and the relevant parts can be referred to the method part.

[0071] It should be noted that, in this specification, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "comprise", "include" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the statement "comprises a ..." does not exclude the presence of other identical elements in the process, method, article or device including the element.

[0072] The above is a detailed introduction to the Sisawa wave surface acoustic wave resonator, bare chip and communication component provided by the present invention. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above embodiments is only used to help understand the method of the present invention and its core idea. It should be pointed out that for ordinary technicians in this technical field, without departing from the principle of the present invention, several improvements and modifications can be made to the present invention, and these improvements and modifications also fall within the scope of protection of the claims of the present invention.

Claims

1. A Sisava surface acoustic wave resonator, characterized in that: From bottom to top, it includes a substrate, a directional energy conducting structure, a first piezoelectric layer, a patterned second piezoelectric layer and interdigital electrodes; The first piezoelectric layer and / or the second piezoelectric layer comprises at least one of a lithium tantalate layer, a lithium niobate layer, an aluminum nitride layer, a scandium-doped aluminum nitride layer, a zinc oxide layer and a piezoelectric ceramic layer; The directional energy guiding structure includes a cavity and / or a Bragg structure layer.

2. The Sisawa surface acoustic wave resonator according to claim 1, characterized in that: The directional energy guiding structure only includes the cavity; The contact surface between the substrate and the first piezoelectric layer comprises a groove, and the groove and the first piezoelectric layer enclose the cavity.

3. The Sisawa surface acoustic wave resonator according to claim 1, characterized in that: The Bragg structure layer comprises a plurality of first acoustic impedance layers and second acoustic impedance layers arranged alternately; the acoustic impedance of the first acoustic impedance layer is higher than the acoustic impedance of the second acoustic impedance layer; The number of acoustic impedance layers included in the Bragg structure layer ranges from 2 to 12, including end points.

4. The Sisawa surface acoustic wave resonator according to claim 1, characterized in that: Also included is a resonant conductive layer; The resonant conductive layer is disposed between the directional energy conducting structure and the first piezoelectric layer.

5. The Sisawa surface acoustic wave resonator according to claim 1, characterized in that: The orthographic projections of the second piezoelectric layer and the interdigital electrodes on the substrate completely overlap or partially overlap.

6. The Sisawa surface acoustic wave resonator according to claim 1, characterized in that: Also includes a reflective grid; The reflection grid is arranged on both sides of the interdigital electrode along the first direction; The first direction is the arrangement direction of the interdigital electrodes.

7. The Sisawa surface acoustic wave resonator according to claim 1, characterized in that: The invention also comprises a silicon dioxide layer, wherein the silicon dioxide layer is arranged between the substrate and the directional energy guiding structure.

8. The Sisawa surface acoustic wave resonator according to claim 1, characterized in that: The first piezoelectric layer and the second piezoelectric layer are made of the same material.

9. A bare chip, characterized in that: The bare chip includes a bulk acoustic wave resonator and a Sisava surface acoustic wave resonator according to any one of claims 1 to 8.

10. A communication component, characterized in that: The communication component includes the bare chip as claimed in claim 9.

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