Light-emitting diode chip light mixing method and light-emitting diode chip configuration structure

Abstract

The invention provides a light-emitting diode chip light mixing method and a light-emitting diode chip configuration structure. The light-emitting diode chip light mixing method comprises the steps that firstly, a plurality of light-emitting diode chips are provided, and each light-emitting diode chip has a preset working current range or a preset working voltage range; then, each preset time length t seconds is divided into n continuous time sections, so that each time section has t / n seconds; then, in each time section t / n seconds of each preset time length t seconds, gradually adjusting a driving power supply provided for each light emitting diode chip, the light emitting diode chips are configured to emit light such that a predetermined emission wavelength generated by each of the light emitting diode chips may allow continuous change within each time segment t / n seconds of each predetermined time length t seconds, whereby each of the light emitting diode chips may be configured to provide a projection light source whose wavelength is continuously changed.

Description

Technical Field

[0001] The present invention relates to a chip light mixing method and a chip configuration structure, and in particular to a light-emitting diode chip light mixing method and a light-emitting diode chip configuration structure using the light-emitting diode chip light mixing method. Background Art

[0002] In the prior art, LED chips need to be pre-classified (pre-selecting LED chips with similar light wavelengths) or mixed with multiple chips (setting multiple LED chips with complementary light wavelengths adjacent to each other for mixing) to reduce the risk of uneven brightness or color (Mura) in LED displays. However, both pre-classification and mixing increase production costs and reduce production efficiency and yield. Summary of the invention

[0003] The problem to be improved or solved by the present invention is to provide a light-emitting diode chip light mixing method and a light-emitting diode chip configuration structure using the light-emitting diode chip light mixing method in view of the deficiencies in the prior art.

[0004] In order to improve or solve the above-mentioned problems, one of the technical means adopted by the present invention is to provide a light-emitting diode chip mixing method, which includes: providing a plurality of light-emitting diode chips, each of which has a predetermined operating current range or a predetermined operating voltage range; dividing each predetermined time length t seconds into n continuous time segments, so that each time segment has t / n seconds; and, in each time segment t / n seconds of each predetermined time length t seconds, gradually adjusting a driving power supply provided to each light-emitting diode chip, thereby allowing a predetermined light emission wavelength generated by each light-emitting diode chip to continuously change in each time segment t / n seconds of each predetermined time length t seconds. Wherein, when the driving power supplied to each LED chip is a predetermined operating current, the predetermined operating current of each LED chip is allowed to gradually increase or decrease within the predetermined operating current range; wherein, when the driving power supplied to each LED chip is a predetermined operating voltage, the predetermined operating voltage of each LED chip is allowed to gradually increase or decrease within the predetermined operating voltage range; wherein, when the predetermined light emission wavelength generated by each LED chip is allowed to continuously produce asymptotic changes within each time segment t / n seconds of each predetermined time length t seconds, each LED chip is configured to provide a projection light source with a continuously changing wavelength.

[0005] In order to improve or solve the above-mentioned problems, another technical means adopted by the present invention is to provide a light-emitting diode chip mixing method, which includes: providing a plurality of light-emitting diode chips, each light-emitting diode chip having a predetermined operating current range or a predetermined operating voltage range; dividing each predetermined time length t seconds into n continuous time segments, so that each time segment has t / n seconds; and, in each time segment t / n seconds of each predetermined time length t seconds, gradually adjusting a predetermined operating current or a predetermined operating voltage provided to each light-emitting diode chip, thereby allowing a predetermined light emission wavelength generated by each light-emitting diode chip to continuously change in each time segment t / n seconds of each predetermined time length t seconds.

[0006] In order to improve or solve the above-mentioned problems, another technical means adopted by the present invention is to provide a light-emitting diode chip configuration structure using a light-emitting diode chip mixing method, which includes: a first light-emitting chip, a second light-emitting chip and a third light-emitting chip. The first light-emitting chip has a first top light-emitting surface, a first bottom non-welding pad area, a first positive electrode pad and a first negative electrode pad. The second light-emitting chip has a second top light-emitting surface, a second bottom non-welding pad area, a second positive electrode pad and a second negative electrode pad. The third light-emitting chip has a third top light-emitting surface, a third bottom non-welding pad area, a third positive electrode pad and a third negative electrode pad. The first light-emitting chip, the second light-emitting chip and the third light-emitting chip are stacked in sequence from bottom to top, and the first light-emitting chip, the second light-emitting chip and the third light-emitting chip are staggered with each other in the horizontal direction; the vertical projection of the second bottom non-weld pad area of ​​the second light-emitting chip partially falls on the first top light-emitting surface of the first light-emitting chip, and the vertical projection of the third bottom non-weld pad area of ​​the third light-emitting chip partially falls on the first top light-emitting surface of the first light-emitting chip and the second top light-emitting surface of the second light-emitting chip; the vertical projection of the second positive electrode solder pad and the vertical projection of the second negative electrode solder pad of the second light-emitting chip will not fall on the first top light-emitting surface of the first light-emitting chip at all, and the vertical projection of the third positive electrode solder pad and the vertical projection of the third negative electrode solder pad of the third light-emitting chip will not fall on the first top light-emitting surface of the first light-emitting chip and the second top light-emitting surface of the second light-emitting chip at all.

[0007] One of the beneficial effects of the present invention is that the light-emitting diode chip mixing method and the light-emitting diode chip configuration structure provided by the present invention can be used to "provide a plurality of light-emitting diode chips, each light-emitting diode chip has a predetermined working current range or a predetermined working voltage range", "divide each predetermined time length t seconds into n continuous time segments, so that each time segment has t / n seconds", and "gradually adjust a driving power provided to each light-emitting diode chip within each time segment t / n seconds of each predetermined time length t seconds". The technical scheme allows a predetermined light wavelength generated by each light-emitting diode chip to continuously change within each time segment t / n seconds of each predetermined time length t seconds. Further, when the driving power provided to each light-emitting diode chip is a predetermined working current, the predetermined working current of each light-emitting diode chip is allowed to gradually increase or decrease within the predetermined working current range. When the driving power provided to each light-emitting diode chip is a predetermined working voltage, the predetermined working voltage of each light-emitting diode chip is allowed to gradually increase or decrease within the predetermined working voltage range. When the predetermined light wavelength generated by each LED chip is allowed to continuously and gradually change within each time segment t / n seconds of each predetermined time length t seconds, each LED chip is configured to provide a projection light source with a continuously changing wavelength.

[0008] To further understand the features and technical contents of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are only for reference and description and are not intended to limit the present invention. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] Figure 1 This is a flow chart of a light-emitting diode chip light mixing method provided by a first embodiment of the present invention.

[0010] Figure 2 A schematic top view of a configuration structure of a plurality of light emitting diode chips used in an image display device provided by a first embodiment of the present invention.

[0011] Figure 3 This is a relationship diagram between the power supply time (time for quickly adjusting the voltage or current supply) and the luminous intensity of the light emitting diode chip provided by the first embodiment of the present invention.

[0012] Figure 4 This is a relationship diagram between the light emitting wavelength (predetermined wavelength range) and the light emitting intensity of the light emitting diode chip provided in the first embodiment of the present invention.

[0013] Figure 5The diagram is a top view of a first light emitting chip of a light emitting diode chip configuration structure provided in a second embodiment of the present invention.

[0014] Figure 6 A schematic top view of a second light-emitting chip of a light-emitting diode chip configuration structure provided in a second embodiment of the present invention, in which a second light-emitting chip is staggered and stacked on a first light-emitting chip.

[0015] Figure 7 It is a top view schematically showing that a third light-emitting chip of the light-emitting diode chip configuration structure provided in the second embodiment of the present invention is staggered and stacked on the second light-emitting chip.

[0016] Figure 8 This is a three-dimensional schematic diagram of a first light-emitting chip, a second light-emitting chip and a third light-emitting chip of a light-emitting diode chip configuration structure provided by a second embodiment of the present invention, which are staggered and stacked in sequence from bottom to top.

[0017] Fig. 9 This is a three-dimensional schematic diagram of a first light-emitting chip, a second light-emitting chip and a third light-emitting chip of a light-emitting diode chip configuration structure provided in a third embodiment of the present invention, which are staggered and stacked in sequence from bottom to top.

[0018] Fig.10 A schematic top view of a configuration structure of a plurality of light emitting diode chips used in an image display device provided by a fourth embodiment of the present invention. DETAILED DESCRIPTION

[0019] The following is an explanation of the implementation methods of the "light-emitting diode chip mixing method" and the "light-emitting diode chip configuration structure using the light-emitting diode chip mixing method" disclosed in the present invention through specific embodiments. Those skilled in the art can understand the advantages and effects of the present invention from the contents disclosed in this specification. The present invention can be implemented or applied through other different specific embodiments, and the details in this specification can also be modified and changed in various ways based on different viewpoints and applications without departing from the concept of the present invention. In addition, it should be stated in advance that the drawings of the present invention are only simple schematic illustrations and are not depicted according to actual sizes. The following embodiments will further explain the relevant technical contents of the present invention in detail, but the disclosed contents are not intended to limit the scope of protection of the present invention. In addition, the term "or" used in this article may include any one or more combinations of the associated listed items depending on the actual situation.

[0020] See also Figures 1 to 10As shown, the present invention provides a light-emitting diode chip mixing method (or a single light-emitting diode chip mixing method), which includes: providing a plurality of light-emitting diode chips, each light-emitting diode chip (for example, a plurality of first light-emitting chips 1, a plurality of second light-emitting chips 2, and a plurality of third light-emitting chips 3 arranged on a circuit substrate P) having a predetermined operating current range or a predetermined operating voltage range; dividing each predetermined time length t seconds into n continuous time segments, so that each time segment has t / n seconds; and, in each time segment t / n seconds of each predetermined time length t seconds, gradually adjusting a predetermined operating current (or a variable operating current) or a predetermined operating voltage (or a variable operating voltage) provided to each light-emitting diode chip, thereby allowing a predetermined light emission wavelength generated by each light-emitting diode chip to continuously change in each time segment t / n seconds of each predetermined time length t seconds.

[0021] First embodiment

[0022] See also Figures 1 to 4 As shown, the first embodiment of the present invention provides a light mixing method for a light emitting diode chip, which comprises: first, cooperating Figure 1 and Figure 2 As shown, a plurality of light-emitting diode chips are provided (for example, a plurality of first light-emitting chips 1, a plurality of second light-emitting chips 2, and a plurality of third light-emitting chips 3 are arranged on a circuit substrate P, and the first light-emitting chips 1, the second light-emitting chips 2, and the third light-emitting chips 3 can cooperate with each other to form a light-emitting diode chip configuration structure S), each light-emitting diode chip has a predetermined operating current range or a predetermined operating voltage range (step S100); then, cooperate Figure 1 and Figure 3 As shown, each predetermined time length t seconds is divided into n continuous time segments, so that each time segment has t / n seconds (step S102, the step of defining timing control parameters); then, Figure 1 , Figure 2 , Figure 3 and Figure 4As shown, within each time segment t / n seconds of each predetermined time length t seconds, a driving power is provided to each LED chip by progressively adjusting through a power supply module M (step S104, the step of performing sequential power supply according to the timing control parameters), so that a predetermined light wavelength generated by each LED chip can be allowed to continuously change within each time segment t / n seconds of each predetermined time length t seconds (that is, a predetermined light wavelength generated by each LED chip can be continuously changed through timing control, so that the same LED chip can be configured to provide a projection light source with a "mixed light effect of different light wavelengths").

[0023] For example, with Figure 2 and Figure 3 As shown, when the driving power provided to each light emitting diode chip is a predetermined working current (or a predetermined operating current), the predetermined working current of each light emitting diode chip can be allowed to gradually increase or decrease within the predetermined working current range (such as Figure 3 As shown, in each time segment t / n seconds of each predetermined time length t seconds, the predetermined working current can be repeatedly increased gradually and then gradually decreased, so that the luminous intensity of the light emitting diode chip can be repeatedly increased gradually and then gradually decreased). In addition, with Figure 2 and Figure 3 As shown, when the driving power supplied to each light emitting diode chip is a predetermined working voltage (or a predetermined operating voltage), the predetermined working voltage of each light emitting diode chip can be allowed to gradually increase or decrease within the predetermined working voltage range (such as Figure 3 As shown, in each time segment t / n seconds of each predetermined time length t seconds, the predetermined working voltage can be repeatedly increased gradually and then gradually decreased, so that the luminous intensity of the light emitting diode chip can be repeatedly increased gradually and then gradually decreased). In this way, Figure 2 and Figure 4 As shown, when the predetermined light wavelength generated by each light emitting diode chip (such as the first light emitting chip 1, the second light emitting chip 2 or the third light emitting chip 3) can be allowed to continuously produce a gradual change in each time segment t / n seconds of each predetermined time length t seconds, each light emitting diode chip can be configured to provide a projection light source with a continuously changed wavelength (or configured to provide a projection light source obtained by mixing different light wavelengths). It is worth noting that Figure 3The large waveform shown is a schematic diagram of "the driving power (predetermined working current or predetermined working voltage) supplied to each LED chip continues to produce asymptotic changes in each predetermined time length t seconds (that is, the asymptotic changes in the luminous intensity of each LED chip in each predetermined time length t seconds)", and each large waveform includes a plurality of small waveforms (not shown), wherein each small waveform is a schematic diagram of "the driving power (predetermined working current or predetermined working voltage) supplied to each LED chip continues to produce asymptotic changes in each time segment t / n seconds of each predetermined time length t seconds (that is, the asymptotic changes in the luminous intensity of each LED chip in each time segment t / n seconds of each predetermined time length t seconds)". However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0024] For example, according to different usage requirements, such as Figure 3 As shown, each predetermined time length t seconds can be between 1 and 3 seconds (or can be less than 1 second, or any positive integer greater than 1 millisecond), and the number of consecutive time segments n can be between 10 and 3000 (or any positive integer between 10 and 3000, or any positive integer greater than 3000). In other words, "the number of seconds of each predetermined time length t seconds" and "the number of n consecutive time segments" can be adjusted according to different usage requirements. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0025] For example, with Figure 2 and Figure 3As shown, the LED chip (such as the first LED chip 1, the second LED chip 2 or the third LED chip 3) can be configured as a sub-millimeter LED chip (mini LED) or a micro LED chip (micro LED). Furthermore, when the LED chip can be configured as a sub-millimeter LED chip, the predetermined operating current range of the LED chip can be between 4.5 mA and 5.5 mA (such as any positive integer between 4500 µA and 5500 µA), so the predetermined operating current of the LED chip can be allowed to increase or decrease gradually (such as repeatedly increasing gradually and then decreasing gradually) between 4.5 mA and 5.5 mA (for example, when "each time segment is 0.1 seconds" and "the operating current change in each time segment is 0.1 mA", the LED chip can obtain a predetermined light wavelength for mixing light between 4.5 mA and 5.5 mA within 1 second). In addition, when the LED chip can be configured as a micro LED chip, the predetermined operating current range of the LED chip can be between 20 µA and 50 µA (for example, any positive integer between 20 µA and 50 µA), so the predetermined operating current of the LED chip can be allowed to increase or decrease gradually (for example, increase gradually and then decrease gradually) repeatedly between 20 µA and 50 µA (for example, when "each time segment is 0.1 second" and "the operating current change in each time segment is 3 µA", the LED chip can obtain a predetermined light wavelength for mixing light between 20 µA and 50 µA within 1 second). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0026] For example, with Figure 2 and Figure 3As shown, the LED chip (e.g., the first LED chip 1, the second LED chip 2, or the third LED chip 3) can be configured as a red sub-millimeter LED chip, a green sub-millimeter LED chip, or a blue sub-millimeter LED chip. Furthermore, when the LED chip can be configured as a red sub-millimeter LED chip, the predetermined operating voltage range of the LED chip can be between 1.1 V and 1.5 V (e.g., any positive integer between 1100 mV and 1500 mV), so the predetermined operating voltage of the LED chip can be allowed to increase or decrease repeatedly between 1.1 V and 1.5 V (e.g., increase gradually and then decrease gradually repeatedly). In addition, when the LED chip can be configured as a green sub-millimeter LED chip, the predetermined operating voltage range of the LED chip can be between 1.6 V and 2.0 V (for example, any positive integer between 1600 mV and 2000 mV), so the predetermined operating voltage of the LED chip can be allowed to be repeatedly gradually increased or gradually decreased between 1.6 V and 2.0 V (for example, repeatedly gradually increased and then gradually decreased). In addition, when the LED chip can be configured as a blue sub-millimeter LED chip, the predetermined operating voltage range of the LED chip can be between 1.7 V and 2.1 V (for example, any positive integer between 1700 mV and 2100 mV), so the predetermined operating voltage of the LED chip can be allowed to be repeatedly gradually increased or gradually decreased between 1.7 V and 2.1 V (for example, repeatedly gradually increased and then gradually decreased). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0027] For example, with Figure 2 and Figure 3As shown, the LED chip (e.g., the first LED chip 1, the second LED chip 2, or the third LED chip 3) can be configured as a red micro LED chip, a green micro LED chip, or a blue micro LED chip. Furthermore, when the LED chip can be configured as a red micro LED chip, the predetermined operating voltage range of the LED chip can be between 1.6 V and 1.8 V (e.g., any positive integer between 1600 mV and 1800 mV), so the predetermined operating voltage of the LED chip can be allowed to increase or decrease repeatedly between 1.6 V and 1.8 V (e.g., increase gradually and then decrease gradually repeatedly). In addition, when the LED chip can be configured as a green micro LED chip, the predetermined operating voltage range of the LED chip can be between 2.3 V and 2.5 V (for example, any positive integer between 2300 mV and 2500 mV), so the predetermined operating voltage of the LED chip can be allowed to be repeatedly gradually increased or gradually decreased between 2.3 V and 2.5 V (for example, repeatedly gradually increased and then gradually decreased). In addition, when the LED chip can be configured as a blue micro LED chip, the predetermined operating voltage range of the LED chip can be between 2.5 V and 2.7 V (for example, any positive integer between 2500 mV and 2700 mV), so the predetermined operating voltage of the LED chip can be allowed to be repeatedly gradually increased or gradually decreased between 2.5 V and 2.7 V (for example, repeatedly gradually increased and then gradually decreased). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0028] For example, with Figure 2 and Figure 4As shown, the LED chip (for example, the first LED chip 1, the second LED chip 2 or the third LED chip 3) can be configured as a red LED chip, a green LED chip or a blue LED chip. Furthermore, when the LED chip can be configured as a red LED chip, the predetermined light wavelength generated by the LED chip can be allowed to change gradually between 350 nm and 700 nm (for example, the predetermined light wavelength can be allowed to increase gradually and then decrease gradually repeatedly between 350 nm and 700 nm, so that the light intensity of the LED chip can be repeatedly increased gradually and then gradually decreased). In addition, when the LED chip can be configured as a green LED chip, the predetermined light wavelength generated by the LED chip can be allowed to change gradually between 520 nm and 560 nm (for example, the predetermined light wavelength can be allowed to increase gradually and then decrease gradually repeatedly between 520 nm and 560 nm, so that the light intensity of the LED chip can be repeatedly increased gradually and then gradually decreased). In addition, when the LED chip can be configured as a blue LED chip, the predetermined light wavelength generated by the LED chip can be allowed to change gradually between 450 nm and 490 nm (for example, the predetermined light wavelength can be allowed to increase gradually and then decrease gradually repeatedly between 450 nm and 490 nm, so that the light intensity of the LED chip can increase gradually and then decrease gradually repeatedly). That is to say, Figure 4 As shown, when the predetermined wavelength of light generated by the LED chip can be allowed to change gradually in “each time segment t / n seconds of each predetermined time length t seconds”, the light intensity of the LED chip can be repeatedly increased gradually and then decreased gradually in “a predetermined wavelength range W” (e.g. Figure 4 ), so that the same light emitting diode chip can be configured to provide a projection light source with a "mixed light effect of different light wavelengths" (such as Figure 4 1 large waveform shown). Therefore, when a plurality of LED chip configuration structures S cooperate with each other to form an image display device D, the image screen generated by the image display device D will not produce uneven brightness or uneven color defects (Mura) through the LED chip light mixing method provided by the first embodiment of the present invention. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0029] Second embodiment

[0030] See also Figures 5 to 8As shown, the second embodiment of the present invention provides a method for manufacturing a light emitting diode chip configuration structure S, which may include the following steps: first, as shown in FIG. Figure 5 As shown, a circuit substrate P is provided, and then a first light-emitting chip 1 is disposed on the circuit substrate P and electrically connected to the circuit substrate P through a conductive material (such as a solder ball or solder paste), wherein the first light-emitting chip 1 has a first top light-emitting surface 101, a first bottom non-pad area 102 (or a first bottom non-electrode area), a first positive electrode pad 103, and a first negative electrode pad 104; then, Figure 6 As shown, a second light-emitting chip 2 is stacked horizontally offset (or horizontally misaligned) on the first light-emitting chip 1 and electrically connected to the circuit substrate P through a conductive material (such as a solder ball or solder paste), wherein the second light-emitting chip 2 has a second top light-emitting surface 201, a second bottom non-welding pad area 202 (or a second bottom non-electrode area), a second positive electrode pad 203 and a second negative electrode pad 204; then, Figure 7 and Figure 8 As shown, a third light-emitting chip 3 is stacked horizontally offset (or horizontally misaligned) on the second light-emitting chip 2 and electrically connected to the circuit substrate P through a conductive material (such as solder balls or solder paste), wherein the third light-emitting chip 3 has a third top light-emitting surface 301, a third bottom non-solder pad area 302 (or a third bottom non-electrode area), a third positive electrode solder pad 303 and a third negative electrode solder pad 304.

[0031] It is worth noting that with Figure 7 and Figure 8 As shown, the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 can be stacked sequentially from bottom to top, and the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 can be staggered (or offset) from each other in the horizontal direction. Thus, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked sequentially from bottom to top, the vertical projection (or orthographic projection) of the second bottom non-pad area 202 of the second light-emitting chip 2 can partially fall on the first top light-emitting surface 101 of the first light-emitting chip 1 (coordinate with the vertical projection) of the second bottom non-pad area 202 of the second light-emitting chip 2. Figure 6 and Figure 8 As shown), and the vertical projection of the third bottom non-pad area 302 of the third light-emitting chip 3 can partially fall on the first top light-emitting surface 101 of the first light-emitting chip 1 and the second top light-emitting surface 201 of the second light-emitting chip 2 (coordinate with Figure 7 and Figure 8In addition, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked in a staggered manner from bottom to top, the vertical projection of the second positive electrode pad 203 and the vertical projection of the second negative electrode pad 204 of the second light-emitting chip 2 will not fall on the first top light-emitting surface 101 of the first light-emitting chip 1 (cooperating with Figure 6 and Figure 8 As shown), and the vertical projection of the third positive electrode pad 303 of the third light-emitting chip 3 and the vertical projection of the third negative electrode pad 304 will not fall on the first top light-emitting surface 101 of the first light-emitting chip 1 and the second top light-emitting surface 201 of the second light-emitting chip 2 (coordinated with Figure 7 and Figure 8 as shown).

[0032] Furthermore, cooperation Figures 5 to 8 As shown, the second embodiment of the present invention further provides a light emitting diode chip configuration structure S (or a staggered stacked light emitting chip structure) of "using the light emitting diode chip mixing method provided by the first embodiment", which includes: a first light emitting chip 1, a second light emitting chip 2 and a third light emitting chip 3. Further, the first light emitting chip 1 has a first top light emitting surface 101, a first bottom non-welding pad area 102, a first positive electrode welding pad 103 and a first negative electrode welding pad 104 (as shown in FIG. Figure 5 As shown in FIG. 1 ), the second light emitting chip 2 has a second top light emitting surface 201, a second bottom non-pad area 202, a second positive electrode pad 203 and a second negative electrode pad 204 (as shown in FIG. 1 ). Figure 6 As shown), the third light emitting chip 3 has a third top light emitting surface 301, a third bottom non-pad area 302, a third positive electrode pad 303 and a third negative electrode pad 304 (coordinated with Figure 7 and Figure 8 It is worth noting that the combination Figure 7 and Figure 8 As shown, the first light emitting chip 1 , the second light emitting chip 2 and the third light emitting chip 3 may be stacked sequentially from bottom to top, and the first light emitting chip 1 , the second light emitting chip 2 and the third light emitting chip 3 may be staggered with each other in the horizontal direction.

[0033] For example, if Figure 7As shown, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked in a staggered manner from bottom to top, the first light-emitting chip 1 can be horizontally deflected by a first predetermined deflection angle θ1 relative to the second light-emitting chip 2, the second light-emitting chip 2 can be horizontally deflected by a second predetermined deflection angle θ2 relative to the third light-emitting chip 3, and the third light-emitting chip 3 can be horizontally deflected by a third predetermined deflection angle θ3 relative to the first light-emitting chip 1, and the first predetermined deflection angle θ1, the second predetermined deflection angle θ2 and the third predetermined deflection angle θ3 can be the same or different from each other. In addition, as Figure 8 As shown, the thickness H1 of the first light-emitting chip 1 can be less than the thickness H2 of the second light-emitting chip 2 (or, the thickness H1 of the first light-emitting chip 1 can be less than the thickness of the second positive electrode pad 203 and the thickness of the second negative electrode pad 204 of the second light-emitting chip 2), the thickness H2 of the second light-emitting chip 2 can be less than the thickness H3 of the third light-emitting chip 3 (or, the thickness H2 of the second light-emitting chip 2 can be less than the thickness of the third positive electrode pad 303 and the thickness of the third negative electrode pad 304 of the third light-emitting chip 3), and the thickness H1 of the first light-emitting chip 1, the thickness H2 of the second light-emitting chip 2, and the thickness H3 of the third light-emitting chip 3 can all be less than 10 μm. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0034] For example, with Figure 7 and Figure 8 As shown, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked in a staggered manner from bottom to top, the vertical projection of the second bottom non-pad area 202 of the second light-emitting chip 2 can partially fall on the first top light-emitting surface 101 of the first light-emitting chip 1, and the vertical projection of the third bottom non-pad area 302 of the third light-emitting chip 3 can partially fall on the first top light-emitting surface 101 of the first light-emitting chip 1 and the second top light-emitting surface 201 of the second light-emitting chip 2. Further, in one of the feasible embodiments, the second light-emitting chip 2 can be directly stacked on the first top light-emitting surface 101 of the first light-emitting chip 1, and the first light-emitting chip 1 and the second light-emitting chip 2 are insulated from each other. In addition, the third light-emitting chip 3 can be directly stacked on the second top light-emitting surface 201 of the second light-emitting chip 2, and the second light-emitting chip 2 and the third light-emitting chip 3 are insulated from each other. However, the above example is only one of the feasible embodiments and is not intended to limit the present invention.

[0035] For example, with Figure 7 and Figure 8As shown, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked and arranged in a staggered manner from bottom to top, the vertical projection of the second positive electrode pad 203 of the second light-emitting chip 2 and the vertical projection of the second negative electrode pad 204 will not fall on the first top light-emitting surface 101 of the first light-emitting chip 1, and the vertical projection of the third positive electrode pad 303 and the vertical projection of the third negative electrode pad 304 of the third light-emitting chip 3 will not fall on the first top light-emitting surface 101 of the first light-emitting chip 1 and the second top light-emitting surface 201 of the second light-emitting chip 2. In other words, the second positive electrode pad 203 and the second negative electrode pad 204 of the second light-emitting chip 2 can avoid the first light-emitting chip 1 and will not contact the first light-emitting chip 1, and the third positive electrode pad 303 and the third negative electrode pad 304 of the third light-emitting chip 3 can avoid the first light-emitting chip 1 and the second light-emitting chip 2 at the same time and will not contact the first light-emitting chip 1 and the second light-emitting chip 2. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0036] For example, with Figure 7 and Figure 8As shown, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked in an offset manner from bottom to top, the first top light-emitting surface 101 of the first light-emitting chip 1 has a first light-emitting area A1 that will not be shielded by the second bottom non-pad area 202 of the second light-emitting chip 2 (the first light-emitting area A1 may include a first left light-emitting surface and a first right light-emitting surface that are separated from each other), the second top light-emitting surface 201 of the second light-emitting chip 2 has a second light-emitting area A2 that will not be shielded by the third bottom non-pad area 302 of the third light-emitting chip 3 (the second light-emitting area A2 may include a second left light-emitting surface and a second right light-emitting surface that are separated from each other), and the third top light-emitting surface 301 of the third light-emitting chip 3 has a third light-emitting area A3 that will not be completely shielded (that is, the original complete light-emitting area of ​​the third light-emitting chip 3). Furthermore, the first light emitting area A1 of the first top light emitting surface 101 may be larger than, equal to, or smaller than the second light emitting area A2 of the second top light emitting surface 201, and the third light emitting area A3 of the third top light emitting surface 301 may be larger than the first light emitting area A1 of the first top light emitting surface 101 and the second light emitting area A2 of the second top light emitting surface 201. In addition, the first light emitting area A1 may occupy approximately 50% to 90% of the surface area of ​​the first top light emitting surface 101 (that is, approximately 50% to 90% (for example, any positive integer percentage between 50% and 90%) of the first top light emitting surface 101 is the actual available light emitting area), and the second light emitting area A2 may occupy approximately 50% to 90% of the surface area of ​​the second top light emitting surface 201 (that is, approximately 50% to 90% (for example, any positive integer percentage between 50% and 90%) of the second top light emitting surface 201 is the actual available light emitting area). Thus, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked in sequence, the mutual optical influence between the projection beam generated by the first light-emitting chip 1, the projection beam generated by the second light-emitting chip 2 and the projection beam generated by the third light-emitting chip 3 can be minimized (or the mutual shielding influence between the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 can be minimized). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0037] For example, with Figure 6 , Figure 7 and Figure 8As shown, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked in an offset manner from bottom to top, the first top light-emitting surface 101 of the first light-emitting chip 1 has a first shielding area B1 shielded by the second bottom non-pad area 202 of the second light-emitting chip 2, and the second top light-emitting surface 201 of the second light-emitting chip 2 has a second shielding area B2 shielded by the third bottom non-pad area 302 of the third light-emitting chip 3. Furthermore, the first shielding area B1 occupies approximately 10% to 50% of the surface area of ​​the first top light-emitting surface 101 (that is, approximately 10% to 50% (for example, any positive integer percentage between 10% and 50%) of the first top light-emitting surface 101 is a light-emitting area that cannot be utilized), and the second shielding area B2 occupies approximately 10% to 50% of the surface area of ​​the second top light-emitting surface 201 (that is, approximately 10% to 50% (for example, any positive integer percentage between 10% to 50%) of the second top light-emitting surface 201 is a light-emitting area that cannot be utilized). Thereby, when the first light-emitting chip 1, the second light-emitting chip 2, and the third light-emitting chip 3 are stacked in sequence, the mutual optical influence between the projection beam generated by the first light-emitting chip 1, the projection beam generated by the second light-emitting chip 2, and the projection beam generated by the third light-emitting chip 3 can be minimized (or the mutual shielding influence between the first light-emitting chip 1, the second light-emitting chip 2, and the third light-emitting chip 3 can be minimized). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0038] For example, with Figure 5 , Figure 6 and Figure 7 As shown, in one of the feasible embodiments, the first light-emitting chip 1 can be configured as a red light-emitting diode bare die (that is, a red light-emitting bare die that has not been packaged) for providing a red light beam, the second light-emitting chip 2 can be configured as a green light-emitting diode bare die (that is, a green light-emitting bare die that has not been packaged) for providing a green light beam, and the third light-emitting chip 3 can be configured as a blue light-emitting diode bare die (that is, a blue light-emitting bare die that has not been packaged) for providing a blue light beam. Figure 7 and Figure 8As shown, when the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 are stacked in an offset manner from bottom to top, the green light beam provided by the green light-emitting diode die (the second light-emitting chip 2) will be projected upward without passing through the red light-emitting diode die (the first light-emitting chip 1), and the blue light beam provided by the blue light-emitting diode die (the third light-emitting chip 3) will be projected upward without passing through the red light-emitting diode die (the first light-emitting chip 1) and the green light-emitting diode die (the second light-emitting chip 2). Thus, when the red light beam provided by the red light-emitting diode die, the green light beam provided by the green light-emitting diode die and the blue light beam provided by the blue light-emitting diode die cooperate with each other, the light-emitting diode chip configuration structure S allows to be configured as an image pixel of an image display device. However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0039] Third embodiment

[0040] See also Fig. 9 As shown, the third embodiment of the present invention provides a light emitting diode chip configuration structure S (or a staggered stacked light emitting chip structure) that "uses the light emitting diode chip mixing method provided by the first embodiment", which includes: a first light emitting chip 1, a second light emitting chip 2 and a third light emitting chip 3. Fig. 9 and Figure 8 It can be seen from the comparison that the main difference between the third embodiment of the present invention and the second embodiment is that: in the third embodiment, the second light-emitting chip 2 can be arranged on the first top light-emitting surface 101 of the first light-emitting chip 1 through a first light-transmitting insulating layer 4, so that the first light-emitting chip 1 and the second light-emitting chip 2 are insulated from each other, and the third light-emitting chip 3 can be arranged on the second top light-emitting surface 201 of the second light-emitting chip 2 through a second light-transmitting insulating layer 5, so that the second light-emitting chip 2 and the third light-emitting chip 3 are insulated from each other.

[0041] For example, any one of the first light-emitting chip 1, the second light-emitting chip 2 and the third light-emitting chip 3 includes at least a gallium nitride (GaN) material layer, a quantum well (MQW) structure layer, an N-type gallium nitride material layer, a P-type gallium nitride material layer, a positive electrode layer and a negative electrode layer that can cooperate with each other. Thus, the first top light-emitting surface 101 of the first light-emitting chip 1, the second top light-emitting surface 201 of the second light-emitting chip 2 and the third top light-emitting surface 301 of the third light-emitting chip 3 can all be gallium nitride material surfaces, and the first bottom non-welding pad area 102 of the first light-emitting chip 1, the second bottom non-welding pad area 202 of the second light-emitting chip 2 and the third bottom non-welding pad area 302 of the third light-emitting chip 3 can all be P-type gallium nitride material surfaces or N-type gallium nitride material surfaces (or N-type gallium nitride material surfaces). That is to say, when the second light-emitting chip 2 is disposed on the first top light-emitting surface 101 of the first light-emitting chip 1, the first light-emitting chip 1 (the first top light-emitting surface 101) and the second light-emitting chip 2 (the second bottom non-welding pad area 202) can be insulated from each other by using a first light-transmitting insulating layer 4 (such as silicone, epoxy resin or any light-transmitting insulating material). In addition, when the third light-emitting chip 3 is disposed on the second top light-emitting surface 201 of the second light-emitting chip 2, the second light-emitting chip 2 (the second top light-emitting surface 201) and the third light-emitting chip 3 (the third bottom non-welding pad area 302) can be insulated from each other by using a second light-transmitting insulating layer 5 (such as silicone, epoxy resin or any light-transmitting insulating material). However, the above example is only one feasible embodiment and is not intended to limit the present invention.

[0042] Fourth embodiment

[0043] See also Fig.10 As shown, the fourth embodiment of the present invention provides an image display device D (or LED display), which includes: a circuit substrate P and a plurality of light-emitting diode chip configuration structures S, and the plurality of light-emitting diode chip configuration structures S are arranged on the circuit substrate P and electrically connected to the circuit substrate P. Further, each light-emitting diode chip configuration structure S used in the fourth embodiment can adopt the light-emitting diode chip configuration structure S provided in the second embodiment or the third embodiment, or each light-emitting diode chip configuration structure S used in the fourth embodiment can also adopt the light-emitting diode chip configuration structure S provided in the first embodiment.

[0044] Advantageous Effects of Embodiments

[0045] One of the beneficial effects of the present invention is that the light-emitting diode chip mixing method and the light-emitting diode chip configuration structure provided by the present invention can be used to "provide a plurality of light-emitting diode chips, each of which has a predetermined working current range or a predetermined working voltage range", "divide each predetermined time length t seconds into n continuous time segments, so that each time segment has t / n seconds", and "gradually adjust a driving power provided to each light-emitting diode chip within each time segment t / n seconds of each predetermined time length t seconds". The technical solution allows a predetermined light wavelength generated by each light-emitting diode chip to be allowed to continuously change within each time segment t / n seconds of each predetermined time length t seconds. Further, when the driving power provided to each light-emitting diode chip is a predetermined working current, the predetermined working current of each light-emitting diode chip is allowed to gradually increase or gradually decrease within the predetermined working current range. When the driving power provided to each light-emitting diode chip is a predetermined working voltage, the predetermined working voltage of each light-emitting diode chip is allowed to gradually increase or gradually decrease within the predetermined working voltage range. When the predetermined light wavelength generated by each LED chip can be allowed to continue to change gradually within each time segment t / n seconds of each predetermined time length t seconds, each LED chip can be configured to provide a projection light source with a continuously changing wavelength, thereby allowing the same LED chip to be configured to provide a projection light source with a "mixing effect of different light wavelengths" (which can even exceed the brightness uniformity or color uniformity mixing effect that can be produced by using "chip pre-classification (pre-selecting LED chips with similar light wavelengths)" or "multiple chip mixing (arranging multiple LED chips with complementary light wavelengths adjacent to each other for mixing)").

[0046] The contents disclosed above are only optional feasible embodiments of the present invention, and are not intended to limit the protection scope of the claims of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention description and drawings are included in the protection scope of the claims of the present invention.

Claims

1. A light mixing method for a light emitting diode chip, characterized in that: The light mixing method of the light emitting diode chip comprises: Providing a plurality of light-emitting diode chips, each of the light-emitting diode chips having a predetermined operating current range or a predetermined operating voltage range; Divide each predetermined time length t seconds into n consecutive time segments, so that each of the time segments has t / n seconds; and In each of the time segments t / n seconds of each of the predetermined time lengths t seconds, a driving power source provided to each of the light-emitting diode chips is gradually adjusted, so that a predetermined light wavelength generated by each of the light-emitting diode chips is allowed to continuously change in each of the time segments t / n seconds of each of the predetermined time lengths t seconds; Wherein, when the driving power provided to each of the light-emitting diode chips is a predetermined operating current, the predetermined operating current of each of the light-emitting diode chips is allowed to gradually increase or decrease within the predetermined operating current range; Wherein, when the driving power supplied to each of the light-emitting diode chips is a predetermined operating voltage, the predetermined operating voltage of each of the light-emitting diode chips is allowed to gradually increase or decrease within the predetermined operating voltage range; When the predetermined light emission wavelength generated by each LED chip allows a continuous and gradual change within each time segment t / n seconds of each predetermined time length t seconds, each LED chip is configured to provide a projection light source with a continuously changing wavelength.

2. The light mixing method of a light emitting diode chip according to claim 1, characterized in that: in, Each of the predetermined time lengths t seconds is between 1 and 3 seconds, and the number of consecutive time segments n is between 10 and 3000; Wherein, the LED chip is configured to be a red LED chip, a green LED chip or a blue LED chip; Wherein, when the LED chip is configured as the red LED chip, the predetermined light emission wavelength generated by the LED chip is allowed to continuously and gradually change between 350 nm and 700 nm; Wherein, when the LED chip is configured as the green LED chip, the predetermined light emission wavelength generated by the LED chip is allowed to continuously and gradually change between 520 nm and 560 nm; Wherein, when the LED chip is configured as the blue LED chip, the predetermined light emission wavelength generated by the LED chip is allowed to continuously and gradually change between 450 nm and 490 nm; Wherein, the light emitting diode chip is configured as a millimeter light emitting diode chip or a micro light emitting diode chip; Wherein, when the LED chip is configured as the sub-millimeter LED chip, the predetermined operating current range of the LED chip is between 4.5 mA and 5.5 mA; Wherein, when the light emitting diode chip is configured as the micro light emitting diode chip, the predetermined operating current range of the light emitting diode chip is between 20 µA and 50 µA; Wherein, the LED chip is configured to be a red sub-millimeter LED chip, a green sub-millimeter LED chip, a blue sub-millimeter LED chip, a red micro LED chip, a green micro LED chip or a blue micro LED chip; Wherein, when the LED chip is configured as the red sub-millimeter LED chip, the predetermined operating voltage range of the LED chip is between 1.1 V and 1.5 V; Wherein, when the LED chip is configured as the green sub-millimeter LED chip, the predetermined operating voltage range of the LED chip is between 1.6 V and 2.0 V; Wherein, when the LED chip is configured as the blue sub-millimeter LED chip, the predetermined operating voltage range of the LED chip is between 1.7 V and 2.1 V; Wherein, when the LED chip is configured as the red micro LED chip, the predetermined operating voltage range of the LED chip is between 1.6 V and 1.8 V; Wherein, when the LED chip is configured as the green micro LED chip, the predetermined operating voltage range of the LED chip is between 2.3 V and 2.5 V; When the LED chip is configured as the blue micro LED chip, the predetermined operating voltage range of the LED chip is between 2.5V and 2.7V.

3. A light emitting diode chip configuration structure, using the light emitting diode chip light mixing method according to claim 1, characterized in that: The light emitting diode chip configuration structure comprises: A first light-emitting chip, wherein the first light-emitting chip has a first top light-emitting surface, a first bottom non-pad area, a first positive electrode pad, and a first negative electrode pad; a second light-emitting chip, the second light-emitting chip having a second top light-emitting surface, a second bottom non-pad area, a second positive electrode pad, and a second negative electrode pad; and a third light-emitting chip, the third light-emitting chip having a third top light-emitting surface, a third bottom non-pad area, a third positive electrode pad and a third negative electrode pad; Wherein, the first light-emitting chip, the second light-emitting chip and the third light-emitting chip are stacked in sequence from bottom to top, and the first light-emitting chip, the second light-emitting chip and the third light-emitting chip are staggered with each other in the horizontal direction; Wherein, a vertical projection of the second bottom non-pad area of ​​the second light-emitting chip partially falls on the first top light-emitting surface of the first light-emitting chip, and a vertical projection of the third bottom non-pad area of ​​the third light-emitting chip partially falls on the first top light-emitting surface of the first light-emitting chip and the second top light-emitting surface of the second light-emitting chip; Among them, the vertical projection of the second positive electrode pad and the vertical projection of the second negative electrode pad of the second light-emitting chip will not fall on the first top light-emitting surface of the first light-emitting chip at all, and the vertical projection of the third positive electrode pad and the vertical projection of the third negative electrode pad of the third light-emitting chip will not fall on the first top light-emitting surface of the first light-emitting chip and the second top light-emitting surface of the second light-emitting chip at all.

4. The light emitting diode chip configuration structure according to claim 3, characterized in that: in, The second light emitting chip is disposed on the first top light emitting surface of the first light emitting chip through a first light-transmissive insulating layer, so that the first light emitting chip and the second light emitting chip are insulated from each other; The third light emitting chip is disposed on the second top light emitting surface of the second light emitting chip through a second light-transmissive insulating layer, so that the second light emitting chip and the third light emitting chip are insulated from each other; The first top light emitting surface of the first light emitting chip, the second top light emitting surface of the second light emitting chip, and the third top light emitting surface of the third light emitting chip are all gallium nitride material surfaces, and the first bottom non-welding pad area of ​​the first light emitting chip, the second bottom non-welding pad area of ​​the second light emitting chip, and the third bottom non-welding pad area of ​​the third light emitting chip are all P-type gallium nitride material surfaces or N-type gallium nitride material surfaces; The first light-emitting chip is horizontally deflected at a first predetermined deflection angle relative to the second light-emitting chip, the second light-emitting chip is horizontally deflected at a second predetermined deflection angle relative to the third light-emitting chip, and the third light-emitting chip is horizontally deflected at a third predetermined deflection angle relative to the first light-emitting chip, and the first predetermined deflection angle, the second predetermined deflection angle and the third predetermined deflection angle are the same or different from each other.

5. The light emitting diode chip configuration structure according to claim 3, characterized in that: in, The second light emitting chip is directly stacked on the first top light emitting surface of the first light emitting chip, and the first light emitting chip and the second light emitting chip are insulated from each other; Wherein, the third light-emitting chip is directly stacked on the second top light-emitting surface of the second light-emitting chip, and the second light-emitting chip and the third light-emitting chip are insulated from each other; The first top light emitting surface of the first light emitting chip has a first light emitting area that will not be shielded by the second bottom non-pad area of ​​the second light emitting chip, the second top light emitting surface of the second light emitting chip has a second light emitting area that will not be shielded by the third bottom non-pad area of ​​the third light emitting chip, and the third top light emitting surface of the third light emitting chip has a third light emitting area that will not be completely shielded; The first light-emitting area of ​​the first top light-emitting surface is larger than, equal to, or smaller than the second light-emitting area of ​​the second top light-emitting surface, and the third light-emitting area of ​​the third top light-emitting surface is larger than the first light-emitting area of ​​the first top light-emitting surface and the second light-emitting area of ​​the second top light-emitting surface; The first light emitting area occupies 50% to 90% of the surface area of ​​the first top light emitting surface, and the second light emitting area occupies 50% to 90% of the surface area of ​​the second top light emitting surface; The first top light emitting surface of the first light emitting chip has a first shielding area shielded by the second bottom non-pad area of ​​the second light emitting chip, and the second top light emitting surface of the second light emitting chip has a second shielding area shielded by the third bottom non-pad area of ​​the third light emitting chip; The first shielding area occupies 10% to 50% of the surface area of ​​the first top light-emitting surface, and the second shielding area occupies 10% to 50% of the surface area of ​​the second top light-emitting surface.

6. The light emitting diode chip configuration structure according to claim 3, characterized in that: in, The second positive electrode pad and the second negative electrode pad of the second light emitting chip avoid the first light emitting chip and do not contact the first light emitting chip, and the third positive electrode pad and the third negative electrode pad of the third light emitting chip avoid the first light emitting chip and the second light emitting chip and do not contact the first light emitting chip and the second light emitting chip; The thickness of the first light-emitting chip is smaller than that of the second light-emitting chip, the thickness of the second light-emitting chip is smaller than that of the third light-emitting chip, and the thickness of the first light-emitting chip, the thickness of the second light-emitting chip and the thickness of the third light-emitting chip are all smaller than 10 μm; The first light emitting chip is configured as a red light emitting diode die for providing a red light beam, the second light emitting chip is configured as a green light emitting diode die for providing a green light beam, and the third light emitting chip is configured as a blue light emitting diode die for providing a blue light beam; Wherein, the green light beam provided by the green LED die is projected upward without passing through the red LED die, and the blue light beam provided by the blue LED die is projected upward without passing through the red LED die and the green LED die; Among them, when the red light beam provided by the red LED die, the green light beam provided by the green LED die and the blue light beam provided by the blue LED die cooperate with each other, the LED chip configuration structure allows to be configured as an image pixel of an image display device.

7. A light mixing method for a light emitting diode chip, characterized in that: The light mixing method of the light emitting diode chip comprises: Providing a plurality of light-emitting diode chips, each of the light-emitting diode chips having a predetermined operating current range or a predetermined operating voltage range; Divide each predetermined time length t seconds into n consecutive time segments, so that each of the time segments has t / n seconds; and In each of the time segments t / n seconds of each of the predetermined time length t seconds, a predetermined operating current or a predetermined operating voltage provided to each of the light-emitting diode chips is gradually adjusted, thereby allowing a predetermined light emission wavelength generated by each of the light-emitting diode chips to continuously change in each of the time segments t / n seconds of each of the predetermined time length t seconds.

8. The light mixing method of a light emitting diode chip according to claim 7, characterized in that: in, Each of the predetermined time lengths t seconds is between 1 and 3 seconds, and the number of consecutive time segments n is between 10 and 3000; Wherein, the LED chip is configured to be a red LED chip, a green LED chip or a blue LED chip; Wherein, when the LED chip is configured as the red LED chip, the predetermined light emission wavelength generated by the LED chip is allowed to continuously and gradually change between 350 nm and 700 nm; Wherein, when the LED chip is configured as the green LED chip, the predetermined light emission wavelength generated by the LED chip is allowed to continuously and gradually change between 520 nm and 560 nm; Wherein, when the LED chip is configured as the blue LED chip, the predetermined light emission wavelength generated by the LED chip is allowed to continuously and gradually change between 450 nm and 490 nm; Wherein, the light emitting diode chip is configured as a millimeter light emitting diode chip or a micro light emitting diode chip; Wherein, when the LED chip is configured as the sub-millimeter LED chip, the predetermined operating current range of the LED chip is between 4.5 mA and 5.5 mA; Wherein, when the light emitting diode chip is configured as the micro light emitting diode chip, the predetermined operating current range of the light emitting diode chip is between 20 µA and 50 µA; Wherein, the LED chip is configured to be a red sub-millimeter LED chip, a green sub-millimeter LED chip, a blue sub-millimeter LED chip, a red micro LED chip, a green micro LED chip or a blue micro LED chip; Wherein, when the LED chip is configured as the red sub-millimeter LED chip, the predetermined operating voltage range of the LED chip is between 1.1 V and 1.5 V; Wherein, when the LED chip is configured as the green sub-millimeter LED chip, the predetermined operating voltage range of the LED chip is between 1.6 V and 2.0 V; Wherein, when the LED chip is configured as the blue sub-millimeter LED chip, the predetermined operating voltage range of the LED chip is between 1.7 V and 2.1 V; Wherein, when the LED chip is configured as the red micro LED chip, the predetermined operating voltage range of the LED chip is between 1.6 V and 1.8 V; Wherein, when the LED chip is configured as the green micro LED chip, the predetermined operating voltage range of the LED chip is between 2.3 V and 2.5 V; When the LED chip is configured as the blue micro LED chip, the predetermined operating voltage range of the LED chip is between 2.5V and 2.7V.

9. A light emitting diode chip configuration structure, using the light emitting diode chip light mixing method according to claim 7, characterized in that: The light emitting diode chip configuration structure comprises: A first light-emitting chip, wherein the first light-emitting chip has a first top light-emitting surface, a first bottom non-pad area, a first positive electrode pad, and a first negative electrode pad; a second light-emitting chip, the second light-emitting chip having a second top light-emitting surface, a second bottom non-pad area, a second positive electrode pad, and a second negative electrode pad; and a third light-emitting chip, the third light-emitting chip having a third top light-emitting surface, a third bottom non-pad area, a third positive electrode pad and a third negative electrode pad; Wherein, the first light-emitting chip, the second light-emitting chip and the third light-emitting chip are stacked in sequence from bottom to top, and the first light-emitting chip, the second light-emitting chip and the third light-emitting chip are staggered with each other in the horizontal direction; Wherein, a vertical projection of the second bottom non-pad area of ​​the second light-emitting chip partially falls on the first top light-emitting surface of the first light-emitting chip, and a vertical projection of the third bottom non-pad area of ​​the third light-emitting chip partially falls on the first top light-emitting surface of the first light-emitting chip and the second top light-emitting surface of the second light-emitting chip; Among them, the vertical projection of the second positive electrode pad and the vertical projection of the second negative electrode pad of the second light-emitting chip will not fall on the first top light-emitting surface of the first light-emitting chip at all, and the vertical projection of the third positive electrode pad and the vertical projection of the third negative electrode pad of the third light-emitting chip will not fall on the first top light-emitting surface of the first light-emitting chip and the second top light-emitting surface of the second light-emitting chip at all.

10. The light emitting diode chip configuration structure according to claim 9, characterized in that: in, The first light-emitting chip is horizontally deflected by a first predetermined deflection angle relative to the second light-emitting chip, the second light-emitting chip is horizontally deflected by a second predetermined deflection angle relative to the third light-emitting chip, and the third light-emitting chip is horizontally deflected by a third predetermined deflection angle relative to the first light-emitting chip, and the first predetermined deflection angle, the second predetermined deflection angle, and the third predetermined deflection angle are the same or different from each other; The first top light emitting surface of the first light emitting chip has a first light emitting area that will not be shielded by the second bottom non-pad area of ​​the second light emitting chip, the second top light emitting surface of the second light emitting chip has a second light emitting area that will not be shielded by the third bottom non-pad area of ​​the third light emitting chip, and the third top light emitting surface of the third light emitting chip has a third light emitting area that will not be completely shielded; The first light-emitting area of ​​the first top light-emitting surface is larger than, equal to, or smaller than the second light-emitting area of ​​the second top light-emitting surface, and the third light-emitting area of ​​the third top light-emitting surface is larger than the first light-emitting area of ​​the first top light-emitting surface and the second light-emitting area of ​​the second top light-emitting surface; The first light emitting area occupies 50% to 90% of the surface area of ​​the first top light emitting surface, and the second light emitting area occupies 50% to 90% of the surface area of ​​the second top light emitting surface; The first top light emitting surface of the first light emitting chip has a first shielding area shielded by the second bottom non-pad area of ​​the second light emitting chip, and the second top light emitting surface of the second light emitting chip has a second shielding area shielded by the third bottom non-pad area of ​​the third light emitting chip; The first shielding area occupies 10% to 50% of the surface area of ​​the first top light-emitting surface, and the second shielding area occupies 10% to 50% of the surface area of ​​the second top light-emitting surface; The second positive electrode pad and the second negative electrode pad of the second light-emitting chip avoid the first light-emitting chip and do not contact the first light-emitting chip, and the third positive electrode pad and the third negative electrode pad of the third light-emitting chip avoid the first light-emitting chip and the second light-emitting chip and do not contact the first light-emitting chip and the second light-emitting chip; The thickness of the first light-emitting chip is smaller than that of the second light-emitting chip, the thickness of the second light-emitting chip is smaller than that of the third light-emitting chip, and the thickness of the first light-emitting chip, the thickness of the second light-emitting chip and the thickness of the third light-emitting chip are all smaller than 10 μm; The first light emitting chip is configured as a red light emitting diode die for providing a red light beam, the second light emitting chip is configured as a green light emitting diode die for providing a green light beam, and the third light emitting chip is configured as a blue light emitting diode die for providing a blue light beam; Wherein, the green light beam provided by the green LED die is projected upward without passing through the red LED die, and the blue light beam provided by the blue LED die is projected upward without passing through the red LED die and the green LED die; Among them, when the red light beam provided by the red LED die, the green light beam provided by the green LED die and the blue light beam provided by the blue LED die cooperate with each other, the LED chip configuration structure allows to be configured as an image pixel of an image display device.

Images