Display panel and display device

By introducing a conductive structure set with the electron transport layer in the OLED display panel and connecting the positive potential, the problem of mismatch between electrons and hole mobility is solved, and the efficiency and life of the display panel are improved.

CN119546070AActive Publication Date: 2025-02-28BOE TECHNOLOGY GROUP CO LTD +1
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Patent Information

Application Number
CN202411718445.3
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-27
Publication Date
2025-02-28
Estimated Expiration
2044-11-27

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Abstract

The invention discloses a display panel and a display device. The display panel comprises a driving backboard, and a plurality of light-emitting devices and a plurality of conductive structures which are located on the same side of the driving backboard. Wherein the conductive structure is at least arranged opposite to an electron transport layer in the light-emitting device, because the conductive structure is accessed to a positive potential, the conductive structure can attract electrons in the electron transport layer, on one hand, the conductive structure can extract the electrons on a molecular orbit of a material of the electron transport layer, so that the lowest unoccupied molecular orbit is reduced; on one hand, the conductive structure can improve the mobility and current density of electrons, on the other hand, the conductive structure can also extract electrons on a trap level, and the concentration of the electrons can be further increased. Therefore, the number of electrons is close to that of holes, and the efficiency and the service life of the display panel can be improved.
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Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a display device. Background Art

[0002] A display panel is a device with display function.

[0003] Current display panels include organic light emitting diode (OLED) display panels. In an OLED display panel, electrons and holes are injected from the cathode and anode, respectively, through electric field driving, migrate to the light-emitting layer, and recombine in the light-emitting layer to excite the light-emitting layer to realize the light-emitting function.

[0004] However, during the migration of electrons and holes, defects may cause the mobility of electrons to be lower than that of holes, resulting in different numbers of electrons and holes reaching the light-emitting layer, which in turn reduces the efficiency and life of the display panel. Summary of the invention

[0005] The embodiment of the present application provides a display panel and a display device. The technical solution is as follows:

[0006] According to one aspect of the present application, a display panel is provided, the display panel comprising: a driving backplane, and a plurality of light emitting devices and a plurality of conductive structures located on the same side of the driving backplane;

[0007] The light emitting device comprises: a first electrode, a light emitting layer and a second electrode which are stacked in sequence; the light emitting layer has an electron transport layer;

[0008] The multiple conductive structures correspond to the multiple light-emitting devices respectively, the conductive structures are located on at least one side of the corresponding light-emitting devices in a first direction parallel to the driving backplane, the conductive structures are insulated from the corresponding light-emitting devices, and a side of the conductive structures facing the corresponding light-emitting devices is a first side surface, and a projection of an electron transport layer in the light-emitting devices on the first side surface of the corresponding conductive structures overlaps with the first side surface;

[0009] Wherein, the multiple conductive structures are all connected to a positive potential.

[0010] Optionally, the light-emitting layer further has a hole transport layer, which is closer to the first electrode than the electron transport layer; the projection of the hole transport layer in the light-emitting device on the first side of the corresponding conductive structure overlaps with the first side.

[0011] Optionally, the display panel further comprises: a pixel definition layer, the pixel definition layer is located on a side of the conductive structure away from the driving backplane, the pixel definition layer has a plurality of pixel openings, the plurality of light-emitting devices correspond to the plurality of pixel openings respectively, and the light-emitting layers in the light-emitting devices are located in the corresponding pixel openings;

[0012] Wherein, the pixel definition layer covers the multiple conductive structures.

[0013] Optionally, a side of the light-emitting layer in the light-emitting device facing the corresponding conductive structure is a second side surface, and an angle between the first side surface and the driving backplane is equal to an angle between the second side surface and the driving backplane.

[0014] Optionally, the light-emitting layer includes: a hole injection layer, a hole transport layer, an organic light-emitting layer, the electron transport layer and an electron injection layer which are sequentially stacked in a direction vertical to and away from the driving backplane;

[0015] Wherein, the distance between a side of the conductive structure facing away from the driving backplane and the driving backplane is greater than or equal to the distance between a side of the electron transport layer facing away from the driving backplane and the driving backplane.

[0016] Optionally, a distance between a side of the conductive structure facing away from the driving back plate and the driving back plate is greater than or equal to a distance between a side of the electron injection layer facing away from the driving back plate and the driving back plate.

[0017] Optionally, the plurality of light emitting devices include: at least two types of light emitting devices, and the lifespans of the at least two types of light emitting devices are different;

[0018] The positive potentials connected to the light-emitting devices of the same type are equal, and the positive potentials connected to the light-emitting devices are negatively correlated with the lifespan of the light-emitting devices.

[0019] Optionally, the first orthographic projection of the conductive structure on the driving backplane is in a strip shape, and the second orthographic projection of the light-emitting layer in the light-emitting device on the driving backplane is in a polygonal shape; for the corresponding conductive structure and the light-emitting device, the first orthographic projection is located on one side of one side of the second orthographic projection in the first direction, and the length of the first orthographic projection is greater than or equal to the length of the one side;

[0020] Alternatively, the orthographic projection of the light-emitting layer in the light-emitting device on the driving backplane is located within the area enclosed by the corresponding first orthographic projection.

[0021] Optionally, the driving backplane comprises: a substrate, and a positive potential access signal line, a power supply line and a plurality of pixel driving circuits located on one side of the substrate;

[0022] The plurality of pixel driving circuits are electrically connected to the plurality of light emitting devices in a one-to-one correspondence, the power supply line is electrically connected to the pixel driving circuit; the positive potential access signal line is electrically connected to the conductive structure;

[0023] The positive potential access signal line is arranged in the same layer as the power line and is made of the same material.

[0024] On the other hand, a display device is provided, including: a power supply component, and a display panel electrically connected to the power supply component, wherein the display panel includes: any one of the above-mentioned display panels.

[0025] The beneficial effects brought by the technical solution provided by the embodiment of the present application include at least:

[0026] A conductive structure is provided in the display panel, and the conductive structure is at least arranged opposite to the electron transport layer in the light-emitting device. Since the conductive structure is connected to a positive potential, the conductive structure will attract electrons in the electron transport layer. On the one hand, the conductive structure can extract electrons from the molecular orbital of the material of the electron transport layer, so that the lowest unoccupied molecular orbital is reduced, which can improve the mobility and current density of electrons. On the other hand, the conductive structure can also extract electrons on the trap energy level, which can further increase the concentration of electrons. In this way, the number of electrons and holes can be close, thereby improving the efficiency and life of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0028] Figure 1 is a schematic diagram of the light-emitting process of an organic light-emitting display panel;

[0029] Figure 2 is a structural schematic diagram of a display panel provided in an embodiment of the present application;

[0030] Figure 3 yes Figure 2 A schematic diagram showing energy level changes in some structures of a display panel is provided;

[0031] Figure 4 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0032] Figure 5 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0033] Figure 6 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application;

[0034] Figure 7 is a comparison chart of life curves of a display panel provided in an embodiment of the present application and a display panel provided in a related art;

[0035] Figure 8 is a flow chart of a method for manufacturing a display panel provided in the present application;

[0036] Fig. 9 It is a schematic diagram of the manufacturing process of a display panel provided in this application.

[0037] The above drawings have shown clear embodiments of the present application, which will be described in more detail later. These drawings and text descriptions are not intended to limit the scope of the present application in any way, but to illustrate the concept of the present application to those skilled in the art by referring to specific embodiments. DETAILED DESCRIPTION

[0038] In order to make the objectives, technical solutions and advantages of the present application clearer, the implementation methods of the present application will be further described in detail below with reference to the accompanying drawings.

[0039] Please refer to Figure 1 , Figure 1 It is a schematic diagram of the light-emitting process of an organic light-emitting display panel. The light-emitting process of the light-emitting device may include: under the action of the electric field between the first electrode 121 and the second electrode 123, holes are injected from the first electrode 121 into the highest occupied molecular orbital (HOMO) of the hole transport layer 122b, and then transferred to the HOMO energy level of the organic light-emitting layer 122d; at the same time, electrons are injected from the second electrode 123 into the lowest unoccupied molecular orbital (LUMO) of the electron transport layer 122a, and then transferred to the LUMO energy level of the organic light-emitting layer 122d. In the organic light-emitting layer 122d, electrons and holes combine under the action of Coulomb force to form excitons, and the excitons can excite the organic light-emitting layer 122d to generate photons to achieve the light-emitting function. Therefore, the efficiency and life of the organic light emitting display panel are related to the combination ratio of electrons and holes. For example, the closer the combination ratio of electrons and holes is to 1, the higher the efficiency and life of the organic light emitting display panel.

[0040] However, in the above-mentioned light-emitting process, the mobility of holes in the light-emitting layer 122 is greater than the mobility of electrons, which is determined by the charge transfer mechanism and molecular structure of the organic semiconductor material used in the light-emitting layer 122. Therefore, at the same time, the number of electrons and holes reaching the organic light-emitting layer 122d is different, and the combination ratio of electrons and holes deviates from 1, resulting in a decrease in efficiency. The decrease in efficiency requires the light-emitting device to work at a higher current density to achieve the required brightness, and long-term operation at a high current will cause the life of the light-emitting device to decay faster.

[0041] In some related technologies, the barrier to hole injection can be enhanced by adjusting the thickness of the organic film layer in the light-emitting device, so as to change the hole transmission rate to adapt to the electron rate, so that the electron-hole combination ratio is 1. However, defects in the organic semiconductor material used in the light-emitting layer 122 are prone to cause the formation of trap energy levels. After the light-emitting device has been working for a long time, electrons are easily captured by the trap energy levels, resulting in their inability to be used for light emission. In this way, the electron-hole combination ratio will still deviate from 1, resulting in a decrease in the efficiency and life of the light-emitting device.

[0042] The present application embodiment provides a display panel, please refer to Figure 2 , Figure 2 It is a structural schematic diagram of a display panel provided in an embodiment of the present application. The display panel 10 includes: a driving backplane 11, and a plurality of light-emitting devices 12 and a plurality of conductive structures 13 located on the same side of the driving backplane 11.

[0043] The display panel 10 provided in the embodiment of the present application can be an OLED display panel. The OLED display panel has many advantages such as self-luminescence, low driving voltage, high luminous efficiency, short response time, high clarity and contrast, wide operating temperature range, and the ability to achieve flexible display and large-area full-color display.

[0044] The driving backplane 11 may be used to carry other structures in the display panel 10, such as a plurality of light emitting devices 12 and a plurality of conductive structures 13. The driving backplane 11 may also include a substrate, and a driving circuit ( Figure 2 (not shown), so that the driving backplane 11 can be used to drive the light-emitting device 12 to emit light.

[0045] The light emitting device 12 includes: a first electrode 121, a light emitting layer 122, and a second electrode 123 which are stacked in sequence. The light emitting layer 122 has an electron transport layer 122a. Here, the light emitting device 12 is used to emit a light beam in a direction away from the driving backplane 11. The plurality of light emitting devices 12 can be electrically connected to the driving backplane 11, so that the driving backplane 11 can control the light emitting state and light emitting brightness of each light emitting device 12.

[0046] The first electrode 121 may be an anode, and the second electrode 123 may be a cathode. The driving circuit in the driving backplane 11 is electrically connected to the first electrode 121 and the second electrode 123. Under the control of the driving backplane 11, the first electrode 121 may generate holes, and the second electrode 123 may generate electrons. Exemplarily, the material of the first electrode 121 may include: indium tin oxide (ITO), the work function of ITO is relatively high, about 4.8 electron volts (eV), and the thickness of the first electrode 121 ranges from 10 nanometers (nm) to 30 nanometers (nm). The material of the second electrode 123 may include: magnesium silver alloy (Mg:Ag), the work function of magnesium silver alloy is relatively low, about 3.7 eV, and the thickness of the second electrode 123 ranges from 10nm to 30nm.

[0047] It should be noted that the light-emitting layer 122 further includes an organic light-emitting layer 122 d , and the electron transport layer 122 a can be used to transport electrons provided by the second electrode 123 to the organic light-emitting layer 122 d .

[0048] A plurality of conductive structures 13 respectively correspond to a plurality of light-emitting devices 12, and the conductive structure 13 is located on at least one side of the corresponding light-emitting device 12 in a first direction parallel to the driving backplane 11. The conductive structure 13 is insulated from the corresponding light-emitting device 12, and the side of the conductive structure 13 facing the corresponding light-emitting device 12 is the first side surface S1. The projection of the electron transport layer 122a in the light-emitting device 12 on the first side surface S1 of the corresponding conductive structure 13 overlaps with the first side surface S1, and the conductive structure 13 is at least arranged relative to the electron transport layer 122a in the corresponding light-emitting device 12 in the first direction X. Here, the conductive structure 13 is insulated from the corresponding light-emitting device 12, that is, in the first direction X, an insulating material is arranged between the conductive structure 13 and the corresponding light-emitting device 12. Exemplarily, the insulating material may be a pixel definition layer 14 for ease of manufacturing, but the embodiments of the present application are not limited thereto, and the insulating material may also be a separately manufactured film layer.

[0049] Among them, the plurality of conductive structures 13 are all connected to a positive potential. Here, since the conductive structure 13 is at least arranged relative to the electron transport layer 122a in the corresponding light-emitting device 12 in the first direction X, the positive potential connected to the conductive structure 13 can at least act on the electron transport layer 122a, so that the energy level of the electron transport layer 122a changes.

[0050] For example, the energy level of the electron transport layer 122a changes, see Figure 3 , Figure 3 yes Figure 2A schematic diagram of energy level changes of some structures in the display panel is provided. After the conductive structure 13 is connected to a positive potential, an electric field E is formed in the pixel definition layer 14 between the conductive structure 13 and the corresponding light-emitting device 12. The direction of the electric field E is the direction from the conductive structure 13 to the electron transport layer 122a. The electric field E causes the electrons on the molecular orbital of the electron transport layer 122a to gather toward the conductive structure 13. The transfer of electrons on the molecular orbital of the electron transport layer 122a causes the LUMO energy level and the HOMO energy level to become lower, showing a downward bending trend.

[0051] The lower the LUMO energy level of the electron transport layer 122a, the easier it is for electrons to jump between the LUMO energy level of the electron transport layer 122a and the LUMO energy level of the organic light-emitting layer 122d, thereby improving the mobility and current density of electrons. Moreover, under the action of the electric field E, electrons on the trap energy level of the electron transport layer 122a can also be extracted, thereby further increasing the concentration of electrons, making the electron-hole combination ratio close to 1, thereby improving the efficiency and life of the display panel.

[0052] It should be noted that the conductive structure 13 is at least arranged opposite to the electron transport layer 122a in the corresponding light emitting device 12 in the first direction X. Figure 2 Only one case is shown for example, that is, the conductive structure 13 is arranged opposite to the multiple film layers in the light-emitting device 12, so that the conductive structure 13 can be easily manufactured on the driving backplane 11. However, the embodiment of the present application is not limited to this. For example, the conductive structure 13 can also be arranged only opposite to the electron transport layer 122a in the light-emitting device 12. Without considering the increase in manufacturing process, a part of the pixel definition layer 14 can be manufactured on the driving backplane 11 to raise the conductive structure 13, and then the pixel definition layer 14 can be manufactured as a whole.

[0053] In summary, the embodiment of the present application provides a display panel, wherein the conductive structure is at least arranged opposite to the electron transport layer in the light-emitting device. Since the conductive structure is connected to a positive potential, the conductive structure will attract electrons in the electron transport layer. On the one hand, the conductive structure can extract electrons from the molecular orbital of the material of the electron transport layer, so that the lowest unoccupied molecular orbital is reduced, which can improve the mobility and current density of the electrons. On the other hand, the conductive structure can also extract electrons on the trap energy level, which can further increase the concentration of electrons. In this way, the number of electrons and holes can be close, thereby improving the efficiency and life of the display panel.

[0054] Optionally, refer to Figure 2The light emitting layer 122 further includes a hole transport layer 122b, which is closer to the first electrode 121 than the electron transport layer 122a. The hole transport layer 122b can be used to transport holes provided by the first electrode 121 to the organic light emitting layer 122d.

[0055] The projection of the hole transport layer 122b in the light-emitting device 12 on the first side surface S1 of the corresponding conductive structure 13 overlaps with the first side surface S1, and the conductive structure 13 is also arranged relative to the hole transport layer 122b in the corresponding light-emitting device 12 in the first direction X, and the positive potential connected to the conductive structure 13 can also act on the hole transport layer 122b to change the energy level of the hole transport layer 122b. The energy level change trend of the hole transport layer 122b is similar to the energy level change trend of the electron transport layer 122a, that is, after the conductive structure 13 is connected to the positive potential, the LUMO energy level and the HOMO energy level of the hole transport layer 122b become lower, showing a downward bending trend.

[0056] Among them, the lower the HOMO energy level of the hole transport layer 122b, the weaker the hole transport ability, which can reduce the hole transmission speed between the HOMO energy level of the hole transport layer 122b and the HOMO energy level of the organic light-emitting layer 122d, thereby reducing the difference in the transmission speed of electrons and holes, making the combination ratio of electrons and holes close to 1, thereby improving the efficiency and life of the display panel.

[0057] Also, please refer to Figure 3 By controlling the size of the positive potential connected to the conductive structure 13, the field strength of the electric field E can be adjusted, thereby controlling the degree of bending of the LUMO energy level and the HOMO energy level. In this way, the conductive structure 13 and the light-emitting device 12 form a structure similar to a thin film transistor, that is, by controlling the size of the positive potential connected to the conductive structure 13, the transmission speed of electrons and holes between the first electrode 121 and the second electrode 123 can be adjusted. This has high flexibility and adaptability, thereby effectively improving the efficiency and life of the display panel.

[0058] The materials and structures of the conductive structure are described below:

[0059] In the examples of this application, please refer to Figure 4 , Figure 4 1 is a schematic diagram of the structure of another display panel provided in an embodiment of the present application. The material of the conductive structure 13 may include: a metal conductive material or a non-metal conductive material to ensure that a positive potential can be connected and to extract electrons from the light-emitting layer 122. Exemplarily, the material of the conductive structure 13 may be metal molybdenum (Mo), and since metal molybdenum is also used in the driving circuit in the driving backplane 11, this can facilitate manufacturing.

[0060] Optionally, the display panel 10 also includes: a pixel definition layer 14, the pixel definition layer 14 is located on the side of the conductive structure 13 away from the driving backplane 11, the pixel definition layer 14 has a plurality of pixel openings K, the plurality of light-emitting devices 12 correspond to the plurality of pixel openings K respectively, and the light-emitting layer 122 in the light-emitting device 12 is located in the corresponding pixel opening K.

[0061] The pixel definition layer 14 covers the plurality of conductive structures 13. The pixel definition layer 13 is used to divide the plurality of light emitting devices 12. The material of the pixel definition layer 13 may be an insulating material, and the pixel definition layer 13 may have an insulating effect between the light emitting devices 12 and the conductive structures 13.

[0062] In the embodiments of the present application, the shape structure of the conductive structure includes various situations, and two exemplary embodiments are used for explanation below:

[0063] For one case, please refer to Figure 5 , Figure 5 1 is a schematic diagram of the structure of another display panel provided by an embodiment of the present application. The first orthographic projection of the conductive structure 13 on the driving backplane 11 is in the shape of a strip, and the second orthographic projection of the light-emitting layer 122 in the light-emitting device 12 on the driving backplane 11 is in the shape of a polygon. In this way, the light-emitting device 12 can extract electrons at least on one side of the light-emitting device 12.

[0064] In this case, for the corresponding conductive structure 13 and the light-emitting device 12, the first orthographic projection is located on one side of one side of the second orthographic projection in the first direction X, and the length L4 of the first orthographic projection is greater than or equal to the length L5 of one side. The maximum width L6 of the conductive structure 13 in the first direction X can be set according to the required electron extraction effect, and illustratively, the width L6 can range from 20 nanometers to 100 nanometers.

[0065] For another case, please refer to Figure 6 , Figure 6 1 is a schematic diagram of the structure of another display panel provided by an embodiment of the present application. The first orthographic projection of the conductive structure 13 on the driving backplane 11 is annular, and the orthographic projection of the light-emitting layer 122 in the light-emitting device 12 on the driving backplane 11 is located in the area surrounded by the corresponding first orthographic projection. In this way, the conductive structure 13 can extract electrons at various positions outside the light-emitting device 12, thereby further improving the efficiency of the light-emitting device.

[0066] In this case, the width of the conductive structure 13 at each position may be approximately equal to ensure the stability and reliability of the formed electric field. Exemplarily, the width may also range from 20 nanometers to 100 nanometers.

[0067] Optionally, the distance between the conductive structure and the light emitting device can be set by referring to Figure 4 The conductive structure 13 has a first side surface S1 facing the corresponding light-emitting device 12, the light-emitting layer 122 in the light-emitting device 12 has a second side surface S2 facing the corresponding conductive structure 13, and the angle α1 between the first side surface S1 and the driving backplane 11 is equal to the angle α2 between the second side surface S2 and the driving backplane 11.

[0068] In this way, the distance L7 between the conductive structure 13 and the light-emitting layer 122 in the corresponding light-emitting device 12 can be approximately equal at each position, thereby ensuring the reliability of the electric field between the conductive structure 13 and the light-emitting layer 122, and further improving the stability of the effect of the conductive structure 13 on improving electron mobility.

[0069] Exemplarily, the distance L7 between the conductive structure 13 and the light-emitting layer 122 in the corresponding light-emitting device 12 may be in the range of 5 nanometers to 20 nanometers. When the distance L7 is within this range, the conductive structure 13 may effectively improve the electron mobility.

[0070] It should be noted that the first side surface S1 of the conductive structure 13 includes various situations. Figure 5 In the strip-shaped structure shown, the first side surface S1 of the conductive structure 13 may be a plane. Figure 6 In the annular structure shown, the first side surface S1 of the conductive structure 13 may be composed of a plurality of planes. In this case, the angles between the plurality of planes and the driving back plate 11 are approximately equal.

[0071] Optionally, the thickness of the conductive structure can be set by referring to Figure 4 Since the conductive structure 13 needs to be arranged opposite to the light-emitting layer 122 to ensure that the formed electric field can act on the light-emitting layer 122 , the conductive structure 13 can be determined according to the thickness of each film layer in the light-emitting layer 122 .

[0072] In the embodiment of the present application, the light-emitting layer 122 includes: a hole injection layer 122c, a hole transport layer 122b, an organic light-emitting layer 122d, an electron transport layer 122a and an electron injection layer 122e which are sequentially stacked in a direction vertically and away from the driving backplane 11.

[0073] The hole injection layer 122c is used to inject holes provided by the first electrode 121 into the hole transport layer 122b. The material of the hole injection layer 122c may include molybdenum oxide (MoO3), and the thickness of the hole injection layer HIL ranges from 5nm to 15nm.

[0074] The material of the hole transport layer 122b may include: diphenyl dinaphthyl benzene diamine (NPB), the LUMO energy level of NPB is 2.4eV, and the HOMO energy level of Alq3 is 5.4eV, so as to form a stepped energy level state to facilitate hole transport. The thickness of the hole transport layer 122b ranges from 50nm to 100nm.

[0075] The material of the organic light emitting layer 122d includes: a host light emitting material and a guest light emitting material doped into the host light emitting material, and the host light emitting material of the organic light emitting layer 122d may include: 8-hydroxyquinolinaluminum salt (Alq3). The thickness of the organic light emitting layer 122d ranges from 20nm to 40nm.

[0076] The material of the electron transport layer 122a may include: Alq3, the LUMO energy level of Alq3 is 3.0 eV, and the HOMO energy level of Alq3 is 5.7 eV, so as to form a stepped energy level state to facilitate electron transport. The thickness of the electron transport layer 122a ranges from 30 nm to 60 nm.

[0077] The electron injection layer 122e is used to inject electrons provided by the second electrode 123 into the electron transport layer 122a. The material of the electron injection layer 122e may include lithium fluoride (LiF). The thickness of the electron injection layer 122e ranges from 5nm to 15nm.

[0078] The distance L1 between the side of the conductive structure 13 facing away from the driving backplane 11 and the driving backplane 11 is greater than or equal to the distance L2 between the side of the electron transport layer 122a facing away from the driving backplane 11 and the driving backplane 11. In this way, when the conductive structure 13 is directly disposed on the driving backplane 11, the conductive structure 13 can play a role in the electron transport layer 122a, the hole injection layer 122c, the hole transport layer 122b and the organic light-emitting layer 122d, and in the direction perpendicular to the driving backplane 11, the thickness of the conductive structure 13 can be greater than or equal to the sum of the thicknesses of these film layers.

[0079] Optionally, a distance L1 between a side of the conductive structure 13 facing away from the driving backplane 11 and the driving backplane 11 is greater than or equal to a distance L3 between a side of the electron injection layer 122e facing away from the driving backplane 11 and the driving backplane 11. In this way, when the conductive structure 13 is directly disposed on the driving backplane 11, the conductive structure 13 can play a role in the electron injection layer 122e, the electron transport layer 122a, the hole injection layer 122c, the hole transport layer 122b and the organic light-emitting layer 122d, and in a direction perpendicular to the driving backplane 11, the thickness of the conductive structure 13 can be greater than or equal to the sum of the thicknesses of these film layers.

[0080] In this application, the conductive structure can be connected to the positive potential by setting the positive potential access signal line, please refer to Figure 4 The driving backplane 11 may include: a substrate 111 , and a positive potential access signal line 112 , a power supply line, a plurality of pixel driving circuits and an insulating layer 113 located on the substrate 111 .

[0081] The substrate 111 may be a rigid substrate or a flexible substrate, for example, a glass substrate. A plurality of pixel driving circuits are electrically connected to a plurality of light emitting devices 12 in a one-to-one correspondence to achieve the function of driving the corresponding light emitting devices 12. A power supply line is electrically connected to the pixel driving circuit to provide a power supply signal to the pixel driving circuit, and the power supply line may include: a high level power supply line (VDD) and a low level power supply line (VSS).

[0082] The positive potential access signal line 112 is electrically connected to the conductive structure 13 to facilitate application of a positive potential to the conductive structure 13. The positive potential access signal line 112 is disposed on the same layer and made of the same material as the power supply line to facilitate manufacturing. Exemplarily, the positive potential access signal line 112 can be disposed on the same layer and made of the same material as the high level power supply line.

[0083] The insulating layer 113 can play an insulating role. The insulating layer 113 can have multiple vias H, which correspond to the multiple conductive structures 13, and the orthographic projections of the vias H on the substrate 111 overlap with the orthographic projections of the corresponding conductive structures 13 on the substrate 111, so that the wires 112 are electrically connected to the conductive structures 13 through the vias H.

[0084] Optionally, refer to Figure 4 The plurality of light emitting devices 12 include: at least two types of light emitting devices 12, and the lifespans of the at least two types of light emitting devices 12 are different.

[0085] Among them, the positive potentials connected to the same type of light-emitting devices 12 are equal, and the positive potential connected to the light-emitting devices 12 is negatively correlated with the life of the light-emitting devices 12, that is, the lower the life of the light-emitting devices 12, the higher the positive potential connected. For the light-emitting devices 12 with a lower life, the combination ratio of electrons and holes is more likely to deviate from 1. Therefore, by setting the positive potential connected to the light-emitting devices 12 with a lower life to be higher, the enhancement effect of the conductive structure 13 on the migration speed of electrons in the light-emitting devices 12 with a lower life can be improved, thereby reducing the life difference between light-emitting devices 12 of different categories.

[0086] Exemplarily, the plurality of light emitting devices 12 may include: a plurality of red light emitting devices, a plurality of green light emitting devices, and a plurality of blue light emitting devices. Based on the characteristic differences of light emitting materials of different colors, the life of the green light emitting device is shorter than that of the red light emitting device, and the life of the green light emitting device is longer than that of the blue light emitting device. The positive potential connected to the green light emitting device is greater than the positive potential connected to the red light emitting device, and the positive potential connected to the green light emitting device is less than the positive potential connected to the blue light emitting device.

[0087] The present application embodiment also performs a life aging test on the display panel, please refer to Figure 7 , Figure 7 : is a comparison chart of the life curves of the display panel provided by the embodiment of the present application and the display panel provided by the related art. Among them, Figure 7 The horizontal axis is the lifespan, in hours (h), and the vertical axis is the brightness, which is the result of normalization based on the brightness of 5 hours of light emission. Curve A1 is the lifespan curve of the display panel provided in the embodiment of the present application. The display panel corresponding to curve A1 is provided with a conductive structure. The specific structure can refer to the above embodiment. The positive potential connected to the conductive structure is 6 volts (V). Curve A2 is the lifespan curve of the display panel provided in the related art. The display panel corresponding to curve A2 is not provided with a conductive structure.

[0088] Depend on Figure 7 It can be seen that the life of curve A1 when the brightness decays to 95% is 146h, and the life of device A2 when the brightness decays to 95% is 112h. Compared with the related technology, the life of the display panel provided in the embodiment of the present application is increased by 30.4%, that is, the electric field formed by the conductive structure being connected to a positive potential can increase the life of the display panel.

[0089] It should be noted that both curve A1 and curve A2 are obtained when the current density is 20 mA / cm2. 2 ), and the light-emitting device in the display panel provided in the embodiment of the present application has the same structure as the light-emitting device in the display panel provided in the related art, which are ITO (20nm) / MoO3 (5nm) / NPB (80nm) / Alq3 (doped luminescence, 30nm) / Alq3 (40nm) / LiF (5nm) / Mg: Ag (10: 1, 20nm), that is, the thickness of the first electrode is 20nm, the material is ITO, the thickness of the hole injection layer is 5nm, the material is MoO3, the thickness of the hole transport layer is 80nm, the material is NPB, the thickness of the organic light-emitting layer is 30nm, the material is doped luminescent Alq3, the thickness of the electron transport layer is 40nm, the material is Alq3, the thickness of the electron injection layer is 5nm, the material is LiF, the thickness of the second electrode is 20nm, and the material is a magnesium-silver alloy with a ratio of 10:1.

[0090] For the display panel including the conductive structure provided in the above embodiment, the present application embodiment also provides a method for manufacturing the conductive structure, please refer to Figure 8 , Figure 8 1 is a flow chart of a method for manufacturing a display panel provided in the present application, the method comprising:

[0091] Step 801: Obtain a driver backplane.

[0092] Please refer to Fig. 9 , Fig. 9 : is a schematic diagram of the manufacturing process of a display panel provided by the present application, wherein S901 is a schematic diagram of the manufacturing process corresponding to step 801, and the driving backplane 11 may include: a substrate 11, and a wire 112 and an insulating layer 113 located on the substrate 11. Among them, the manufacturing process of the wire 112 may include a magnetron sputtering process and a patterning process, and the patterning process involved in the embodiment of the present application may include coating photoresist, exposure, development, etching, and stripping photoresist. A plurality of vias H may be formed in the insulating layer 113 by an etching process, and a conductive material may be filled in the plurality of vias H so that the wire 112 is electrically connected to the conductive structure 13 through the vias H.

[0093] Step 802: forming a plurality of conductive structures on one side of the driving backplane.

[0094] Please refer to Fig. 9 S902 and S903 are schematic diagrams of the manufacturing process corresponding to step 802. A whole conductive material layer 21 can be formed on one side of the driving backplane 11, and then the conductive material layer 21 is patterned by a mask plate M using a composition process to form a plurality of conductive structures 13.

[0095] Step 803: forming a pixel definition layer and a plurality of light-emitting devices on a driving backplane having a plurality of conductive structures.

[0096] The pixel definition layer and the plurality of light emitting devices may be formed on the same side of the driving backplane, and step 403 may include a plurality of sub-steps:

[0097] Sub-step 4031 : forming a first electrode on a driving backplane having a plurality of conductive structures formed thereon.

[0098] Please refer to Fig. 9 , S904 is a schematic diagram of the manufacturing process corresponding to sub-step 4031. The manufacturing process of the first electrode 121 may include a magnetron sputtering process and a patterning process. The first electrode 121 may be located on one side of the conductive structure 13 in the first direction.

[0099] Sub-step 4032: forming a pixel definition layer on a side of the conductive structure away from the driving backplane.

[0100] Please refer to Fig. 9 S905 and S906 are schematic diagrams of the manufacturing process corresponding to sub-step 4032. A whole layer of pixel definition material layer 22 can be formed on one side of the driving backplane 11, and then the pixel definition material layer 22 is patterned by a mask plate M using a composition process to form a pixel definition layer 14 having multiple openings K.

[0101] Sub-step 4033: forming a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer and a second electrode on a side of the first electrode away from the driving backplane.

[0102] Please refer to Fig. 9 S907 is a schematic diagram of the manufacturing process corresponding to sub-step 4033. A hole injection layer 122c, a hole transport layer 122b, an organic light-emitting layer 122d, an electron transport layer 122a, an electron injection layer 122e and a second electrode 123 can be formed in sequence on the side of the first electrode 121 away from the driving backplane 11 through a vapor deposition process and an exposure and development process.

[0103] In summary, the embodiment of the present application provides a display panel, wherein the conductive structure is at least arranged opposite to the electron transport layer in the light-emitting device. Since the conductive structure is connected to a positive potential, the conductive structure will attract electrons in the electron transport layer. On the one hand, the conductive structure can extract electrons from the molecular orbital of the material of the electron transport layer, so that the lowest unoccupied molecular orbital is reduced, which can improve the mobility and current density of the electrons. On the other hand, the conductive structure can also extract electrons on the trap energy level, which can further increase the concentration of electrons. In this way, the number of electrons and holes can be close, thereby improving the efficiency and life of the display panel.

[0104] On the other hand, an embodiment of the present application further provides a display device, which includes a power supply component and a display panel provided by any of the above embodiments, and the power supply component can supply power to the display panel. The display device can be any device including a display function, and exemplarily, the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a laptop computer, a digital photo frame, a navigator, etc.

[0105] Since the display device includes the display panel provided by the above embodiment, the display device can also have a similar effect, that is, the efficiency and life of the display device can be improved.

[0106] It should be noted that in the accompanying drawings, the sizes of layers and regions may be exaggerated for clarity of illustration. It is also understood that when an element or layer is referred to as being "on" another element or layer, it may be directly on the other element, or there may be an intermediate layer. In addition, it is understood that when an element or layer is referred to as being "under" another element or layer, it may be directly under the other element, or there may be more than one intermediate layer or element. In addition, it is also understood that when a layer or element is referred to as being "between" two layers or two elements, it may be the only layer between the two layers or two elements, or there may also be more than one intermediate layer or element. Similar reference numerals throughout the text indicate similar elements.

[0107] In the present application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance. The term "plurality" refers to two or more than two, unless otherwise clearly defined.

[0108] The above description is only an optional embodiment of the present application and is not intended to limit the present application. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present application shall be included in the protection scope of the present application.

Claims

1. A display panel, characterized in that: The display panel comprises: a driving backplane, and a plurality of light emitting devices and a plurality of conductive structures located on the same side of the driving backplane; The light emitting device comprises: a first electrode, a light emitting layer and a second electrode which are stacked in sequence; the light emitting layer has an electron transport layer; The multiple conductive structures correspond to the multiple light-emitting devices respectively, the conductive structures are located on at least one side of the corresponding light-emitting devices in a first direction parallel to the driving backplane, the conductive structures are insulated from the corresponding light-emitting devices, and a side of the conductive structures facing the corresponding light-emitting devices is a first side surface, and a projection of an electron transport layer in the light-emitting devices on the first side surface of the corresponding conductive structures overlaps with the first side surface; Wherein, the multiple conductive structures are all connected to a positive potential.

2. The display panel according to claim 1, characterized in that: The light-emitting layer also has a hole transport layer, which is closer to the first electrode than the electron transport layer; the projection of the hole transport layer in the light-emitting device on the first side of the corresponding conductive structure overlaps with the first side.

3. The display panel according to claim 2, characterized in that: The display panel further comprises: a pixel definition layer, the pixel definition layer is located on a side of the conductive structure away from the driving backplane, the pixel definition layer has a plurality of pixel openings, the plurality of light-emitting devices correspond to the plurality of pixel openings respectively, and the light-emitting layers in the light-emitting devices are located in the corresponding pixel openings; Wherein, the pixel definition layer covers the multiple conductive structures.

4. The display panel according to claim 3, characterized in that: A side of the light-emitting layer in the light-emitting device facing the corresponding conductive structure is a second side surface, and an angle between the first side surface and the driving backplane is equal to an angle between the second side surface and the driving backplane.

5. The display panel according to any one of claims 1 to 4, characterized in that: The light-emitting layer comprises: a hole injection layer, a hole transport layer, an organic light-emitting layer, the electron transport layer and an electron injection layer which are sequentially stacked in a direction vertical to and away from the driving backplane; Wherein, the distance between a side of the conductive structure facing away from the driving backplane and the driving backplane is greater than or equal to the distance between a side of the electron transport layer facing away from the driving backplane and the driving backplane.

6. The display panel according to claim 5, characterized in that: The distance between a side of the conductive structure facing away from the driving back plate and the driving back plate is greater than or equal to the distance between a side of the electron injection layer facing away from the driving back plate and the driving back plate.

7. The display panel according to any one of claims 1 to 4, characterized in that: The plurality of light emitting devices include: at least two types of light emitting devices, and the life spans of the at least two types of light emitting devices are different; The positive potentials connected to the light-emitting devices of the same type are equal, and the positive potentials connected to the light-emitting devices are negatively correlated with the lifespan of the light-emitting devices.

8. The display panel according to any one of claims 1 to 4, characterized in that: The first orthographic projection of the conductive structure on the driving backplane is in the shape of a strip, and the second orthographic projection of the light-emitting layer in the light-emitting device on the driving backplane is in the shape of a polygon; for the corresponding conductive structure and the light-emitting device, the first orthographic projection is located on one side of a side of the second orthographic projection in the first direction, and the length of the first orthographic projection is greater than or equal to the length of the side; Alternatively, the first orthographic projection of the conductive structure on the driving backplane is in the shape of a ring, and the orthographic projection of the light-emitting layer in the light-emitting device on the driving backplane is located in the area enclosed by the corresponding first orthographic projection.

9. The display panel according to any one of claims 1 to 4, characterized in that: The driving backplane comprises: a substrate, and a positive potential access signal line, a power supply line and a plurality of pixel driving circuits located on one side of the substrate; The plurality of pixel driving circuits are electrically connected to the plurality of light emitting devices in a one-to-one correspondence, the power supply line is electrically connected to the pixel driving circuit; the positive potential access signal line is electrically connected to the conductive structure; The positive potential access signal line is arranged in the same layer as the power line and is made of the same material.

10. A display device, characterized in that: include: A power supply component, and a display panel electrically connected to the power supply component, wherein the display panel comprises: the display panel according to any one of claims 1 to 9.

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