Blind hole AMOLED display and manufacturing method thereof

Abstract

The invention discloses a blind hole AMOLED displayer and a manufacturing method thereof.The blind hole AMOLED displayer comprises an upper glass substrate and a lower glass substrate, the upper glass substrate is attached to the lower glass substrate, the lower glass substrate is provided with a blind hole area and a display area, a routing area is arranged between the blind hole area and the display area, and the blind hole area and the display area are connected through a wire. The routing area is arranged around the periphery of the blind hole area, the position of the blind hole area is filled with UV glue, and the inner side and the outer side, opposite to the blind hole area, of the routing area are each provided with a PI step used for blocking flowing of the UV glue. The PI steps for slowing down flowing of the UV glue are arranged on the inner side and the outer side of the blind hole area, and the retaining wall and the supporting column layer are arranged in the wiring area, so that the UV glue is further prevented from flowing to the display area, the influence of the UV glue on the display area is reduced, and the display effect is guaranteed.

Description

Technical Field

[0001] The present invention relates to the technical field of displays, and in particular to a blind hole AMOLED display and a manufacturing method thereof. Background Art

[0002] With the further development of display technology, consumers have higher and higher requirements for full screens, and the technology of under-screen cameras has also begun to be widely used. However, due to the photosensitivity of the camera, in order to ensure the shooting effect, the under-screen camera, that is, the blind hole area, requires a higher transmittance. Therefore, the fewer film layers in the blind hole area, the better. This leads to a significant height difference between the blind hole area and the non-blind hole area due to the difference in film layers. The Newton ring effect caused by this height difference is very serious, which greatly affects the transmittance and appearance of the blind hole area. The industry's solution to Newton rings is to fill the blind hole with UV glue to reduce this height difference, but the fluidity of the UV glue may cause it to penetrate into the display area and affect the display effect of the monitor. Summary of the invention

[0003] The purpose of the present invention is to overcome the deficiencies in the prior art and provide a blind hole AMOLED display and a manufacturing method thereof.

[0004] The objective of the present invention is achieved through the following technical solutions:

[0005] In a first aspect, the present invention provides a blind hole AMOLED display, comprising: an upper glass substrate and a lower glass substrate, the upper glass substrate being bonded to the lower glass substrate, the lower glass substrate having a blind hole area and a display area, a wiring area being provided between the blind hole area and the display area, the wiring area being arranged around the periphery of the blind hole area, the position of the blind hole area being filled with UV glue, and the wiring area being provided with PI steps on both inner and outer sides relative to the blind hole area for blocking the flow of the UV glue.

[0006] In one embodiment, the routing area is formed with a first PI step, a second PI step, and a third PI step on both inner and outer sides of the blind hole area, the first PI step and the second PI step are both located on the inner side of the blind hole area, the third PI step is located on the outer side of the blind hole area, the second PI step is located above the first PI step, and the third PI step is located above the second PI step.

[0007] In one embodiment, the first PI step extends from the inner side of the blind hole area to the inner edge of the display area, the second PI step extends from the inner side of the blind hole area to the inner edge of the display area, and the position where the second PI step is arranged on the inner side of the blind hole area is separated by a certain distance from the position where the first PI step is arranged on the inner side of the blind hole area, and the third PI step extends outward from the outer side of the blind hole area to the inner edge of the display area.

[0008] In one embodiment, the first PI step and the second PI step are about 20 um away from the inner edge of the blind hole area, and the third PI step is about 20 um away from the outer edge of the blind hole area.

[0009] In one of the embodiments, a support column layer is provided within the routing area, the support column layer is located in the outer area of ​​the routing area relative to the blind hole area, the support column layer is provided above the third PI step, and the support column layer is close to the inner edge of the display area, and the support column layer is arranged in a circle around the inner circumferential direction of the display area.

[0010] In one embodiment, two retaining walls are provided within the routing area, and the two retaining walls are respectively a first retaining wall and a second retaining wall, and the first retaining wall and the second retaining wall are located at the same layer as the support column layer.

[0011] In one embodiment, the first retaining wall and the second retaining wall are sequentially arranged at the periphery of the blind hole area, the first retaining wall is located about 200um away from the outside of the blind hole area, and the distance between the first retaining wall and the second retaining wall is 60um.

[0012] In one embodiment, the first retaining wall and the second retaining wall are both convex rings with a width of 20 um, and the first retaining wall and the second retaining wall are both disposed around the periphery of the blind hole area.

[0013] In one embodiment, the first retaining wall and the second retaining wall are each provided with a plurality of truncation portions along the circumferential direction, and the truncation portions truncate the first retaining wall and the second retaining wall, and positions of the plurality of truncation portions on the first retaining wall and the plurality of truncation portions on the second retaining wall are different from each other.

[0014] In a second aspect, the present invention provides a method for manufacturing a blind hole AMOLED display, comprising the following steps:

[0015] Providing a lower glass substrate, and sequentially forming a buffer layer, a polysilicon layer, a first insulating layer, a first gate layer, a first wiring layer in a blind hole region, a second insulating layer, a capacitor upper electrode layer, a second wiring layer in a blind hole region, a third insulating layer, a first via layer, and a polysilicon source-drain electrode layer on the lower glass substrate;

[0016] Forming a planarization layer on the polysilicon source-drain electrode layer, and forming a planarization layer via hole and a first PI step on the planarization layer;

[0017] forming an OLED anode layer above the planarization layer;

[0018] forming a pixel definition layer, a support column layer, a second PI step, a third PI step and a retaining wall on the OLED anode layer;

[0019] Etching the silicon oxide and silicon nitride of the first insulating layer, the second insulating layer and the third insulating layer, and forming a second via layer on the lower glass substrate;

[0020] forming an OLED light-emitting layer and an OLED cathode layer on the pixel definition layer;

[0021] An upper glass substrate is provided, UV glue is applied at corresponding positions of the blind hole area between the upper glass substrate and the lower glass substrate, and the upper glass substrate and the lower glass substrate are bonded, packaged and cured.

[0022] Compared with the prior art, the present invention has at least the following advantages:

[0023] 1. A blind hole AMOLED display of the present invention forms a first barrier to UV glue by respectively providing a first PI step, a second PI step and a third PI step at the inner and outer side edges of the routing area relative to the blind hole area to slow down the fluidity of the UV glue, and then further blocks the UV glue from flowing to the display area by providing a first retaining wall and a second retaining wall in a convex shape, and finally a support column layer is provided near the inner edge of the display area, and the support column layer and the first retaining wall and the second retaining wall are located at the same layer, and the UV glue is blocked by multiple layers to control the flow of the UV glue, reduce the influence of the UV glue on the display area, and ensure the display effect;

[0024] 2. The method for manufacturing a blind hole AMOLED display of the present invention realizes the manufacturing of a blind hole AMOLED display by providing a method for manufacturing a blind hole AMOLED display. During the manufacturing process, a first PI step, a second PI step, a third PI step, a retaining wall and a supporting column layer are formed, so that the manufactured blind hole AMOLED display can control the UV glue to flow to the display area to ensure the display effect. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required for use in the embodiments are briefly introduced below.

[0026] Figure 1 A schematic diagram of the structure of a blind hole AMOLED display provided by the present invention;

[0027] Figure 2 for Figure 1 A magnified schematic diagram of part A;

[0028] Figure 3 A schematic diagram of the cross-sectional structure of a blind hole AMOLED display provided by the present invention;

[0029] Figure 4 A schematic diagram of a method for manufacturing a blind hole AMOLED display provided by the present invention.

[0030] Description of the drawings: 10, upper glass substrate; 20, lower glass substrate; 21, blind hole area; 22, display area; 23, wiring area; 30, UV glue; 40, first PI step; 50, second PI step; 60, third PI step; 70, support column layer; 80, first retaining wall; 90, second retaining wall; 100, truncation portion; 110, buffer layer; 120, polysilicon layer; 130, first insulating layer; 140, first gate layer; 1 50. Routing layer one in the blind hole area; 160. Second insulating layer; 170. Capacitor upper electrode layer; 180. Routing layer two in the blind hole area; 190. Third insulating layer; 200. Via layer one; 210. Polysilicon source and drain electrode layer; 220. Planarization layer; 230. Planarization layer via; 240. OLED anode layer; 250. Pixel definition layer; 260. Via layer two; 270. OLED light-emitting layer; 280. OLED cathode layer. DETAILED DESCRIPTION

[0031] To facilitate understanding of the present invention, the present invention will be described more fully below with reference to the relevant drawings.

[0032] The preferred embodiments of the present invention are shown in the accompanying drawings. However, the present invention can be implemented in many different forms and is not limited to the embodiments described herein. On the contrary, the purpose of providing these embodiments is to make the disclosure of the present invention more thoroughly understood.

[0033] It should be noted that when an element is referred to as being "fixed to" another element, it may be directly on the other element or there may be a central element. When an element is considered to be "connected to" another element, it may be directly connected to the other element or there may be a central element at the same time. The terms "vertical", "horizontal", "left", "right" and similar expressions used herein are for illustrative purposes only and do not represent the only implementation method.

[0034] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used herein in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items.

[0035] A blind hole AMOLED display, referring to Figure 1-3 , including an upper glass substrate 10 and a lower glass substrate 20, the upper glass substrate 10 is bonded to the lower glass substrate 20, and the lower glass substrate 20 has a blind hole area 21 and a display area 22. It should be noted that pixel circuits and light-emitting points are placed in the display area 22, and pixel circuits and light-emitting points are not placed in the blind hole area 21. The blind hole area 21 is provided with a groove relative to the lower glass substrate 20, and the film layer of the lower glass substrate 20 is removed in this groove to provide light transmittance. Part of the OLED evaporation material can be retained in the blind hole area 21 or all the OLED evaporation materials can be removed to improve the transmittance of light in the blind hole area 21 and enhance the camera shooting effect. In this embodiment, there are one or more blind hole areas 21 on the lower glass substrate 20, and the shape of the blind hole area 21 can be circular, pill-shaped or other shapes. The position of the blind hole area 21 can be located anywhere on the left, middle, right, etc. of the blind hole AMOLED display. The shape, position and number of the blind hole area 21 are not limited.

[0036] Reference Figure 1 and Figure 2 A wiring area 23 is provided between the blind hole area 21 and the display area 22 , and the wiring area 23 is provided around the periphery of the blind hole area 21 .

[0037] Reference Figure 3The position of the blind hole area 21 is filled with UV glue 30, which is a high-transmittance optical glue, and can be a light-curing glue or a heat-curing glue. The cured UV glue 30 can be used for the penetration of normal light, and is also used for the support between the lower glass substrate 20 and the upper glass substrate 10 to reduce the Newton ring phenomenon caused by glass deformation. It should be noted that the position of the UV glue 30 in the blind hole area 21 is not limited. The UV glue 30 can be applied at the position of the lower glass substrate 20 relative to the blind hole area 21 or the position of the upper glass substrate 10 relative to the blind hole area 21. After the UV glue 30 is applied in the blind hole area 21, the upper glass substrate 10 and the lower glass substrate 20 are bonded and packaged.

[0038] Reference Figure 1-3 Since the blind hole area 21 and the display area 22 have different film layers, there is an obvious height difference between the blind hole area 21 and the display area 22. The Newton ring effect caused by the height difference greatly affects the transmittance and appearance of the blind hole area 21. After the blind hole area 21 is filled with UV glue 30, although the height difference problem can be solved, the fluidity of the UV glue 30 is large, which will cause it to penetrate into the display area 22 and affect the display effect. Therefore, the wiring area 23 is provided with PI steps for blocking the flow of UV glue 30 on both sides of the inner and outer sides relative to the blind hole area 21, and the PI steps can slow down the fluidity of the UV glue 30. Specifically, the wiring area 23 is formed with a first PI step 40, a second PI step 50 and a third PI step 60 on both sides of the inner and outer sides relative to the blind hole area 21. Among them, the first PI step 40 and the second PI step 50 are both located on the inner side of the blind hole area 21, and the third PI step 60 is located on the outer side of the blind hole area 21.

[0039] Further, refer to Figure 1-3 , the first PI step 40 extends from the inner side of the blind hole area 21 to the inner edge close to the display area 22, the second PI step 50 extends from the inner side of the blind hole area 21 to the inner edge close to the display area 22, and the position where the second PI step 50 is arranged on the inner side of the blind hole area 21 is separated from the position where the first PI step 40 is arranged on the inner side of the blind hole area 21 by a certain distance. The third PI step 60 extends outward from the outer side of the blind hole area 21 to the inner edge close to the display area 22. Specifically, the first PI step 40 and the second PI step 50 are about 20um away from the inner edge of the blind hole area 21, and the third PI step 60 is about 20um away from the outer edge of the blind hole area 21. It should be noted that the second PI step 50 is located above the first PI step 40, and the third PI step 60 is located above the second PI step 50.

[0040] Further, refer to Figure 1-3, a support column layer 70 is provided within the range of the wiring area 23, the support column layer 70 is located in the peripheral area of ​​the wiring area 23 relative to the blind hole area 21, the support column layer 70 is provided above the third PI step 60, and the support column layer 70 is located near the inner edge of the display area 22, and the support column layer 70 is arranged in a circle around the inner circumferential direction of the display area 22. It should be noted that the support column layer 70 is composed of a plurality of protruding support columns, and the plurality of support columns are evenly distributed along the inner circumferential direction of the display area 22 to further prevent the UV glue 30 from flowing out of the display area 22.

[0041] Further, refer to Figure 1-3 , a plurality of retaining walls are provided within the range of the routing area 23. In the present embodiment, there are two retaining walls, namely the first retaining wall 80 and the second retaining wall 90. The first retaining wall 80 and the second retaining wall 90 are located at the same layer as the support column layer 70. Among them, the first retaining wall 80 and the second retaining wall 90 are sequentially arranged at the outer circle of the blind hole area 21, the first retaining wall 80 is located at a position about 200um away from the outside of the blind hole area 21, and the spacing between the first retaining wall 80 and the second retaining wall 90 is 60um. The first retaining wall 80 and the second retaining wall 90 are both convex rings with a width of 20um, and the first retaining wall 80 and the second retaining wall 90 are both arranged around the periphery of the blind hole area 21. It should be noted that the shape of the first retaining wall 80 and the second retaining wall 90 can be a smooth circular ring, or a circular ring with serrations or other different shapes.

[0042] Reference Figure 1 and Figure 2 The first retaining wall 80 and the second retaining wall 90 are both provided with a plurality of truncation parts 100 along the circumferential direction, and the truncation parts 100 truncate the first retaining wall 80 and the second retaining wall 90. The positions of the plurality of truncation parts 100 on the first retaining wall 80 and the plurality of truncation parts 100 on the second retaining wall 90 are different from each other, so that the position of truncation of the first retaining wall 80 is different from the position of truncation of the second retaining wall 90, thereby more effectively blocking the UV glue 30 from flowing to the wiring area 23 and the display area 22. It should be noted that in the present embodiment, there are two retaining walls, and the number of retaining walls can be set as a plurality according to actual needs. In the case of sufficient space, the more retaining walls there are, the better the blocking effect of the UV glue 30.

[0043] Further, refer to Figure 1-3The first retaining wall 80 and the second retaining wall 90 are both located inside the support column layer 70, wherein the first PI step 40, the second PI step 50 and the third PI step 60 form the first barrier to the UV glue 30 to slow down the fluidity of the UV glue 30, and then the first retaining wall 80 and the second retaining wall 90 are arranged in a convex shape to further block the UV glue 30 from flowing toward the display area 22, and finally the support column layer 70 is arranged near the inner edge of the display area 22, and the support column layer 70 and the first retaining wall 80 and the second retaining wall 90 are located on the same layer, and after multiple layers of blocking of the UV glue 30, the flow of the UV glue 30 is controlled, the influence of the UV glue 30 on the display area 22 is reduced, and the display effect is ensured.

[0044] A method for manufacturing a blind hole AMOLED display, referring to Figure 4 , including the following steps:

[0045] Step 1: providing a lower glass substrate 20, and sequentially forming a buffer layer 110, a polysilicon layer 120, a first insulating layer 130, a first gate layer 140, a blind hole area wiring layer 150, a second insulating layer 160, a capacitor upper electrode layer 170, a blind hole area wiring layer 2 180, a third insulating layer 190, a via layer 1 200 and a polysilicon source and drain electrode layer 210 on the lower glass substrate 20;

[0046] Step 2: forming a planarization layer 220 on the polysilicon source-drain electrode layer 210 , and forming a planarization layer via hole 230 and a first PI step 40 on the planarization layer 220 ;

[0047] Step 3: forming an OLED anode layer 240 on the planarization layer 220;

[0048] Step 4: forming a pixel definition layer 250, a support column layer 70, a second PI step 50, a third PI step 60 and a retaining wall on the OLED anode layer 240;

[0049] Step 5: etching the silicon oxide and silicon nitride of the first insulating layer 130 , the second insulating layer 160 and the third insulating layer 190 , and forming a second via layer 260 on the lower glass substrate 20 ;

[0050] Step 6: forming an OLED light emitting layer 270 and an OLED cathode layer 280 on the pixel definition layer 250;

[0051] Step 7: providing an upper glass substrate 10, applying UV glue 30 at positions corresponding to the blind hole area 21 between the upper glass substrate 10 and the lower glass substrate 20, and bonding and encapsulating the upper glass substrate 10 and the lower glass substrate 20 to be cured.

[0052] Reference Figure 4In step 1, a lower glass substrate 20 is provided, and a buffer layer 110, a polysilicon layer 120, a first insulating layer 130, a first gate layer 140, a wiring layer 150 in the blind hole region, a second insulating layer 160, a capacitor upper electrode layer 170, a wiring layer 2 180 in the blind hole region, a third insulating layer 190, a via layer 1 200, and a polysilicon source-drain electrode layer 210 are sequentially formed on the lower glass substrate 20. The buffer layer 110, the polysilicon layer 120, the first insulating layer 130, the first gate layer 140, the wiring layer 150 in the blind hole region, the second insulating layer 160, the capacitor upper electrode layer 170, the wiring layer 2 180 in the blind hole region, the third insulating layer 190, the via layer 1 200, and the polysilicon source-drain electrode layer 210 are sequentially formed on the lower glass substrate 20 by coating, exposure, development, etching, and other processes. It should be noted that the lower glass substrate 20 is made of glass substrate; the buffer layer 110 can be made of materials such as silicon nitride or silicon oxide; the polysilicon layer 120 is amorphous silicon formed by excimer laser ELA; the first insulating layer 130 can be made of materials such as silicon nitride or silicon oxide; the first gate layer 140 is the gate of the polysilicon transistor, and can be made of materials such as molybdenum, chromium, aluminum, copper, titanium, etc.; the blind hole area wiring layer 150 can be made of materials such as molybdenum, chromium, aluminum, copper, titanium, etc.; the second insulating layer 160 can be made of materials such as silicon nitride or silicon oxide; the capacitor upper electrode layer 170 can be made of materials such as molybdenum, chromium, aluminum, copper, etc.; the blind hole area wiring layer 2 180 can be made of materials such as molybdenum, chromium, aluminum, copper, titanium, etc.; the third insulating layer 190 is made of silicon oxide; the via layer 1 200 is used to realize the electrical connection between the polysilicon layer 120 and the polysilicon source and drain electrode layer 210; the polysilicon source and drain electrode layer 210 can be made of materials such as molybdenum, chromium, aluminum, copper, titanium, etc.

[0053] Reference Figure 4 In step 2, a planarization layer 220 is formed on the polysilicon source-drain electrode layer 210, and a planarization layer via 230 and a first PI step 40 are formed on the planarization layer 220. PI is coated on the polysilicon source-drain electrode layer 210 to form the planarization layer 220, and a planarization layer via 230 is formed on the planarization layer 220 by exposure and development, and the first PI step 40 of the blind hole region 21 is also formed during the exposure and development.

[0054] Reference Figure 4 In step 3, an OLED anode layer 240 is formed on the planarization layer 220. The ITO / AG / ITO material is deposited on the planarization layer 220, and a photolithography process is used to form the OLED anode layer 240. It should be noted that the ITO / AG / ITO material is a transparent conductive film, and its conductivity is higher than that of the traditional transparent conductive material indium tin oxide. It is used to make the OLED anode layer 240 to enhance the conductive performance of the blind hole AMOLED display.

[0055] Reference Figure 4 In step 4, a pixel definition layer 250, a support column layer 70, a second PI step 50, a third PI step 60 and a retaining wall are formed on the OLED anode layer 240; wherein PI is coated on the OLED anode layer 240, and exposed through a halftone mask, and the pixel definition layer 250 and the support column layer 70 are formed after development and curing, and the second PI step 50, the third PI step 60 and the retaining wall in the blind hole area 21 are also formed in this process. It should be noted that the pixel definition layer 250 is used to define the size of the OLED light-emitting area, and the pixel definition layer 250 and the support column layer 70 are both made of PI material; the number of retaining walls can be set to two or more according to actual conditions to enhance the blocking effect of the UV glue 30 in the blind hole area 21.

[0056] Reference Figure 4 In step 5, the silicon oxide and silicon nitride of the first insulating layer 130, the second insulating layer 160 and the third insulating layer 190 are etched, and a second via layer 260 is formed on the lower glass substrate 20. After the pixel definition layer 250 and the support column layer 70 are formed, the silicon oxide and silicon nitride of the first insulating layer 130, the second insulating layer 160 and the third insulating layer 190 at the position of the blind hole area 21 are etched by a photolithography process. It should be noted that the step of etching the silicon oxide and silicon nitride of the first insulating layer 130, the second insulating layer 160 and the third insulating layer 190 at the position of the blind hole area 21 can also be performed after the polysilicon source and drain electrode layer 210 is formed. After etching the silicon oxide and silicon nitride of the first insulating layer 130, the second insulating layer 160 and the third insulating layer 190 at the position of the blind hole area 21, a second via layer 260 is formed at a position of the lower glass substrate 20 relative to the blind hole area 21. The second via layer 260 etches off the first insulating layer 130, the second insulating layer 160 and the third insulating layer 190 on the lower glass substrate 20, and the planarization layer via 230 in step 2 is used to realize the electrical connection between the OLED anode layer 240 and the second via layer 260.

[0057] Reference Figure 4 In step 6, an OLED light emitting layer 270 and an OLED cathode layer 280 are formed on the pixel definition layer 250. After the above steps are completed on the lower glass substrate 20, an evaporation mask is used to form an organic material OLED light emitting layer 270 and an OLED cathode layer 280 on the lower glass substrate 20 by evaporation. It should be noted that the OLED cathode layer 280 can be made of materials such as Mg and AG.

[0058] Reference Figure 4In step 7, an upper glass substrate 10 is provided, and UV glue 30 is applied to the position corresponding to the blind hole area 21 between the upper glass substrate 10 and the lower glass substrate 20, and the upper glass substrate 10 and the lower glass substrate 20 are bonded and packaged and cured. After completing the above steps on the lower glass substrate 20, an upper glass substrate 10 is provided, and UV glue 30 is applied to the position corresponding to the blind hole area 21 on the upper glass substrate 10 by means of equipment or manual glue application, thereby reducing the height difference between the blind hole area 21 and the non-blind hole area of ​​the blind hole AMOLED display. It should be noted that the position of glue application in the blind hole area 21 is not limited, and can be on the lower glass substrate 20 or the upper glass substrate 10.

[0059] After UV glue 30 is applied to the blind hole area 21, the upper glass substrate 10 and the lower glass substrate 20 are bonded together through a glass packaging method and laser sintering and curing to isolate the influence of external water vapor and oxygen on the OLED devices in the blind hole AMOLED display. It should be noted that during the bonding process of the upper glass substrate 10 and the lower glass substrate 20, the UV glue 30 will flow downward to the OLED cathode layer 280 on the lower glass substrate 20 under the action of gravity, and then diffuse to both sides. In the process of UV glue 30 diffusing to the periphery, it will be blocked by the first PI step 40, the second PI step 50, the third PI step 60 and the retaining wall, so that it is difficult for the UV glue 30 to flow to the display area 22. After the upper glass substrate 10 and the lower glass substrate 20 are packaged and sintered, the UV glue 30 in the blind hole area 21 is cured by a UV lamp. After the above process is completed, the glass after the upper glass substrate 10 and the lower glass substrate 20 are bonded together is thinned, cut into pieces, and IC / FPC is bound. The blind hole AMOLED display provided by the present invention can be completed. The blind hole AMOLED display has the function of blocking the UV glue 30 from flowing to the display area 22, thereby ensuring the display effect.

[0060] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be based on the attached claims.

Claims

1. A blind hole AMOLED display, characterized in that: include: An upper glass substrate (10) and a lower glass substrate (20), wherein the upper glass substrate (10) is bonded to the lower glass substrate (20), the lower glass substrate (20) having a blind hole area (21) and a display area (22), a wiring area (23) being provided between the blind hole area (21) and the display area (22), the wiring area (23) being arranged around the periphery of the blind hole area (21), the position of the blind hole area (21) being filled with UV glue (30), and the wiring area (23) being provided with PI steps for blocking the flow of the UV glue (30) on both inner and outer sides relative to the blind hole area (21).

2. The blind hole AMOLED display according to claim 1, characterized in that: The routing area (23) is formed with a first PI step (40), a second PI step (50) and a third PI step (60) on both inner and outer sides relative to the blind hole area (21); the first PI step (40) and the second PI step (50) are both located on the inner side of the blind hole area (21); the third PI step (60) is located on the outer side of the blind hole area (21); the second PI step (50) is located above the first PI step (40); and the third PI step (60) is located above the second PI step (50).

3. The blind hole AMOLED display according to claim 2, characterized in that: The first PI step (40) extends from the inner side of the blind hole area (21) to an inner edge close to the display area (22); the second PI step (50) extends from the inner side of the blind hole area (21) to an inner edge close to the display area (22); and the position where the second PI step (50) is arranged on the inner side of the blind hole area (21) is separated by a certain distance from the position where the first PI step (40) is arranged on the inner side of the blind hole area (21); and the third PI step (60) extends outward from the outer side of the blind hole area (21) to an inner edge close to the display area (22).

4. The blind hole AMOLED display according to claim 3, characterized in that: The first PI step (40) and the second PI step (50) are about 20 um away from the inner edge of the blind hole area (21), and the third PI step (60) is about 20 um away from the outer edge of the blind hole area (21).

5. The blind hole AMOLED display according to claim 3, characterized in that: A support column layer (70) is provided within the routing area (23), the support column layer (70) is located in the peripheral area of ​​the routing area (23) relative to the blind hole area (21), the support column layer (70) is provided above the third PI step (60), and the support column layer (70) is close to the inner edge of the display area (22), and the support column layer (70) is provided around the inner circumferential direction of the display area (22).

6. The blind hole AMOLED display according to claim 5, characterized in that: Two retaining walls are provided within the wiring area (23), the two retaining walls being respectively a first retaining wall (80) and a second retaining wall (90), and the first retaining wall (80) and the second retaining wall (90) are located at the same layer as the support column layer (70).

7. The blind hole AMOLED display according to claim 6, characterized in that: The first retaining wall (80) and the second retaining wall (90) are arranged in sequence on the periphery of the blind hole area (21); the first retaining wall (80) is located at a position about 200 um away from the outside of the blind hole area (21), and the distance between the first retaining wall (80) and the second retaining wall (90) is 60 um.

8. The blind hole AMOLED display according to claim 7, characterized in that: The first retaining wall (80) and the second retaining wall (90) are both convex rings with a width of 20 um, and the first retaining wall (80) and the second retaining wall (90) are both arranged around the periphery of the blind hole area (21).

9. The blind hole AMOLED display according to claim 8, characterized in that: The first retaining wall (80) and the second retaining wall (90) are both provided with a plurality of truncation portions (100) along the circumferential direction, the truncation portions (100) truncate the first retaining wall (80) and the second retaining wall (90), and the positions of the plurality of truncation portions (100) on the first retaining wall (80) and the plurality of truncation portions (100) on the second retaining wall (90) are different from each other.

10. A method for manufacturing a blind hole AMOLED display, characterized in that: The following steps are involved: A lower glass substrate (20) is provided, and a buffer layer (110), a polysilicon layer (120), a first insulating layer (130), a first gate layer (140), a blind hole region wiring layer 1 (150), a second insulating layer (160), a capacitor upper electrode layer (170), a blind hole region wiring layer 2 (180), a third insulating layer (190), a via layer 1 (200), and a polysilicon source-drain electrode layer (210) are sequentially formed on the lower glass substrate (20); Forming a planarization layer (220) on the polysilicon source-drain electrode layer (210), and forming a planarization layer via hole (230) and a first PI step (40) on the planarization layer (220); forming an OLED anode layer (240) above the planarization layer (220); forming a pixel definition layer (250), a support column layer (70), a second PI step (50), a third PI step (60) and a retaining wall on the OLED anode layer (240); Etching the silicon oxide and silicon nitride of the first insulating layer (130), the second insulating layer (160) and the third insulating layer (190), and forming a second via layer (260) on the lower glass substrate (20); forming an OLED light-emitting layer (270) and an OLED cathode layer (280) on the pixel definition layer (250); An upper glass substrate (10) is provided, UV glue (30) is applied at corresponding positions of a blind hole area (21) between the upper glass substrate (10) and a lower glass substrate (20), and the upper glass substrate (10) and the lower glass substrate (20) are bonded, packaged and cured.

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