Composite material memristor and preparation method thereof

Abstract

The invention relates to the technical field of memristors, in particular to a composite material memristor and a preparation method thereof, specifically, an FTO glass substrate is sequentially coated with a polyvinyl alcohol and Ti3C2Tx composite material thin film and a zirconium oxide thin film, and then a silver top electrode is deposited on the zirconium oxide thin film to form a four-layer vertical structure. The method is specially designed for a neuromorphic computing system so as to simulate the plasticity of biological synapses. Tests prove that the voltage amplitude modulation precision reaches up to 0.1 V, accurate control over the synaptic weight is ensured, meanwhile, high plasticity is shown, rapid learning and adaptation to changing input conditions can be achieved, the excellent retention characteristic of more than 5 * 104 seconds and the reliability of more than 200 IV scanning cycles are achieved, and the method is suitable for large-scale popularization and application. The memristor solves the problems that when an existing memristor simulates a biological synaptic function, the voltage modulation precision, plasticity and long-term stability are not enough.

Description

Technical Field

[0001] This invention relates to the field of memristor technology, and more specifically to a composite material memristor and its preparation method. Background Technology

[0002] The core of AI technology lies in the capabilities of its computing systems, which can simulate the efficient processing and learning abilities of the human brain. In particular, neuromorphic computing systems, by mimicking the structure and function of the human brain's neural networks, demonstrate enormous potential to surpass traditional computing architectures. One of the key components of these systems is the memristor, which can simulate the plasticity of biological synapses, that is, changing its conduction properties according to the timing and intensity of the input signal.

[0003] Currently, memristor technology is mainly studied based on various materials and structures to simulate the behavior of biological synapses. While existing memristor technology has made progress in some areas, it still has limitations. For example, many memristors have not yet reached ideal performance standards in terms of voltage modulation accuracy, plasticity, and long-term stability.

[0004] Furthermore, existing memristors face challenges in achieving rapid learning and long-term memory retention, which limits their application in high-performance neuromorphic computing systems. Summary of the Invention

[0005] The purpose of this invention is to provide a composite material memristor and its preparation method, aiming to solve the problems of insufficient voltage modulation accuracy, plasticity and long-term stability of existing memristors when simulating biological synaptic functions.

[0006] To achieve the above objectives, the present invention provides a composite material memristor comprising a four-layer vertical structure, the bottom layer being an FTO glass substrate, wherein a layer of polyvinyl alcohol and Ti3C2T is coated on the FTO glass substrate. x Composite film, wherein the polyvinyl alcohol and Ti3C2T x A zirconia film is coated on the composite material film, and a silver top electrode is deposited on the zirconia film at the top layer.

[0007] Furthermore, the present invention also proposes a method for preparing a composite material memristor, comprising the following steps:

[0008] Step 1: Preparation of Ti3C2T x powder;

[0009] Step 2: Using Ti3C2T x Powder preparation of polyvinyl alcohol and Ti3C2T x Composite film;

[0010] Step 3: Mix polyvinyl alcohol with Ti3C2T x Composite film coated on FTO glass substrate;

[0011] Step 4: The reaction of polyvinyl alcohol with Ti3C2T x Zirconia film coated on composite film;

[0012] Step 5: Deposit a silver top electrode on the zirconium oxide film.

[0013] Optionally, in step 1, Ti3C2T is prepared. x The powdering process includes the following steps:

[0014] Step 1.1: Remove aluminum atoms from the MAX phase material Ti3AlC2 by selective etching with a mixture of hydrochloric acid and hydrofluoric acid;

[0015] Step 1.2: After the etching process is completed, the resulting suspension is thoroughly cleaned to adjust the pH of the solution to neutral.

[0016] Step 1.3: The obtained precipitate was dispersed by continuous stirring in a lithium chloride solution to obtain multilayer Ti3C2T. x Nanosheets;

[0017] Step 1.4: Apply multilayer Ti3C2T x Nanosheets were redispersed in water, followed by shaking, sonication, and centrifugation to achieve monolayer or few-layer Ti3C2T. x Effective separation of nanosheets;

[0018] Step 1.5: Finally, these nanosheets are dehydrated using vacuum drying technology to form a dry powder.

[0019] Optionally, in step 2, polyvinyl alcohol reacts with Ti3C2T x The preparation of composite material films includes the following steps:

[0020] Step 2.1: Prepare a 60 mg / mL polyvinyl alcohol solution;

[0021] Step 2.2: Ultrasonic dispersion of Ti3C2T x The powder forms a suspension in ethanol;

[0022] Step 2.3: Mix the polyvinyl alcohol solution and Ti3C2T x The ethanol suspension was mixed and stirred at 50°C for 2 hours to form a composite solution;

[0023] Step 2.4: Coat the composite solution onto the FTO glass substrate and then dry to form a thin film.

[0024] Optionally, the zirconium oxide film in step 3 is obtained through the following steps:

[0025] Step 3.1: Ultrasonic treatment of a mixed solution of ethanolamine, zirconium acetylacetonate, and ethanol to form a zirconium oxide solution;

[0026] Step 3.2: Coat the polyvinyl alcohol and Ti3C2T solution with zirconium oxide solution. x The composite film was baked at 285°C and subjected to high-temperature oxygen annealing.

[0027] Optionally, the silver top electrode is deposited using thermal evaporation deposition with a metal mask.

[0028] This invention provides a composite material memristor and its preparation method, specifically involving the sequential coating of polyvinyl alcohol and Ti3C2T onto an FTO glass substrate. x A composite material thin film and a zirconia thin film are formed, and then a silver top electrode is deposited on the zirconia thin film to form a four-layer vertical structure. This invention is specifically designed for neuromorphic computing systems to simulate the plasticity of biological synapses. Experiments have confirmed that this invention achieves voltage amplitude modulation accuracy up to 0.1V, ensuring precise control of synaptic weights, while exhibiting high plasticity, enabling rapid learning and adaptation to changing input conditions, and achieving a result exceeding 5 × 10⁻⁶. 4 Its excellent retention characteristics of seconds and reliability of more than 200 IV scan cycles solve the problems of insufficient voltage modulation accuracy, plasticity and long-term stability of existing memristors when simulating biological synaptic functions. Attached Figure Description

[0029] To more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the drawings used in the description of the embodiments or the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0030] Figure 1 This is a schematic diagram of a specific implementation architecture of a composite material memristor according to the present invention.

[0031] Figure 2 This is a schematic diagram of the test simulating the transition from short-term to long-term plasticity in biological synapses according to the present invention.

[0032] Figure 3 This is a schematic diagram of the peak time-dependent plasticity test in the simulated biological synapse, as presented in this invention.

[0033] Figure 4 This is a schematic diagram of the IV cycle stability and retention characteristics test of the present invention. Detailed Implementation

[0034] Embodiments of the present invention are described in detail below, examples of which are illustrated in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain the present invention, and should not be construed as limiting the present invention.

[0035] Please see Figure 1 This invention provides a composite material memristor, comprising a four-layer vertical structure, with the bottom layer being an FTO glass substrate, on which a layer of polyvinyl alcohol and Ti3C2T is coated. x Composite film, wherein the polyvinyl alcohol and Ti3C2T x A zirconia film is coated on the composite material film, and a silver top electrode is deposited on the zirconia film at the top layer.

[0036] Furthermore, the present invention also proposes a method for preparing a composite material memristor, comprising the following steps:

[0037] Step 1: Preparation of Ti3C2T x powder;

[0038] Step 2: Using Ti3C2T x Powder preparation of polyvinyl alcohol and Ti3C2T x Composite film;

[0039] Step 3: Mix polyvinyl alcohol with Ti3C2T x Composite film coated on FTO glass substrate;

[0040] Step 4: The reaction of polyvinyl alcohol with Ti3C2T x Zirconia film coated on composite film;

[0041] Step 5: Deposit a silver top electrode on the zirconium oxide film.

[0042] In step 1, Ti3C2T is prepared. x The powdering process includes the following steps:

[0043] Step 1.1: Remove aluminum atoms from the MAX phase material Ti3AlC2 by selective etching with a mixture of hydrochloric acid and hydrofluoric acid;

[0044] Step 1.2: After the etching process is completed, the resulting suspension is thoroughly cleaned to adjust the pH of the solution to neutral.

[0045] Step 1.3: The precipitate obtained from washing is dispersed in a lithium chloride solution with continuous stirring to obtain multilayer Ti3C2T.x Nanosheets;

[0046] Step 1.4: Apply multilayer Ti3C2T x Nanosheets were redispersed in water, followed by shaking, sonication, and centrifugation to achieve monolayer or few-layer Ti3C2T. x Effective separation of nanosheets;

[0047] Step 1.5: Finally, these nanosheets are dehydrated using vacuum drying technology to form a dry powder.

[0048] In step 2, polyvinyl alcohol reacts with Ti3C2T x The preparation of composite material films includes the following steps:

[0049] Step 2.1: Prepare a 60 mg / mL polyvinyl alcohol solution;

[0050] Step 2.2: Ultrasonic dispersion of Ti3C2T x The powder forms a suspension in ethanol;

[0051] Step 2.3: Mix the polyvinyl alcohol solution and Ti3C2T x The ethanol suspension was mixed and stirred at 50°C for 2 hours to form a composite solution;

[0052] Step 2.4: Coat the composite solution onto the FTO glass substrate and then dry to form a thin film.

[0053] The zirconium oxide thin film in step 3 is obtained through the following steps:

[0054] Step 3.1: Ultrasonic treatment of a mixed solution of ethanolamine, zirconium acetylacetonate, and ethanol to form a zirconium oxide solution;

[0055] Step 3.2: Coat the polyvinyl alcohol and Ti3C2T solution with zirconium oxide solution. x The composite film was baked at 285°C and subjected to high-temperature oxygen annealing.

[0056] The silver top electrode was deposited using thermal evaporation deposition with a metal mask.

[0057] Specifically, this invention is based on the preparation of organic MXene composite materials. MXene, as a novel two-dimensional material, has attracted widespread attention due to its excellent electrical conductivity, mechanical properties, and tunable surface chemistry. The Ti3C2T component of the MXene family... xDue to its unique physical and chemical properties, polyvinyl alcohol (MXene) exhibits great potential for application in the field of artificial synapses. Combining the biocompatibility, plasticity, and ease of processing of the organic material polyvinyl alcohol, this invention proposes an organic MXene composite memristor, aiming to improve the performance of the memristor and make it more closely resemble the characteristics of a biological synapse. Simultaneously, to enhance the stability and long-term reliability of the organic MXene composite memristor during the simulation of biological synapses, a zirconium oxide thin film layer is inserted.

[0058] Please see Figures 2 to 4 The present invention illustrates parameter testing through specific embodiments.

[0059] From the appendix Figure 2 It is known that applying specific voltage amplitude pulse sequences of 1V, 1.2V, and 1.3V to the composite material memristor described in this invention replicates the transition from short-term to long-term plasticity. The applied voltage control accuracy can reach micro-level changes of 0.1V, and a slight increase in pulse amplitude significantly reduces the number of pulses required for stable device operation from 70 to 10. These findings highlight the accuracy and efficiency of memristors in simulating synaptic weight changes, which contributes to rapid signal response and adaptability to changing input conditions. (See attached...) Figure 3 It can be seen that when a test voltage amplitude of 0.5V is applied to the composite material memristor described in this invention, and the peak pulse voltage amplitude before and after is 1V, during the verification of peak time-dependent plasticity, when the peak time approaches zero, the positive synaptic weight change rate (LTP) reaches 88.32%, and the negative synaptic weight change rate (LTD) reaches -97.87%. This confirms its high sensitivity to peak time; even small time differences can lead to significant changes in synaptic weights, making it particularly advantageous for applications in dynamic environments or real-time computing tasks. (See Appendix) Figure 4 It can be seen that the high and low impedance states of the present invention have more than 5 × 10⁻⁶ at a test voltage of 0.1V. 4 It boasts excellent hold-up characteristics for seconds. Furthermore, it exhibits cycle stability of over 200 IV scan cycles within a voltage range of 2 to -4V, providing reliable assurance for long-term stable operation.

[0060] In summary, this invention solves the problems of voltage modulation accuracy, plasticity, and long-term stability existing in existing memristors when simulating biological synaptic functions. It can efficiently transfer data from short-term memory to long-term memory, demonstrating potential for rapid learning and information retention.

[0061] The above description discloses only one preferred embodiment of the present invention, and should not be construed as limiting the scope of the present invention. Those skilled in the art will understand that all or part of the processes of the above embodiments can be implemented, and equivalent changes made in accordance with the claims of the present invention are still within the scope of the invention.

Claims

1. A composite material memristor, characterized in that: The structure comprises four vertical layers, the bottom layer is a FTO glass substrate, and the FTO glass substrate is coated with a layer of polyvinyl alcohol and Ti3C2T x Composite film, polyvinyl alcohol and Ti3C2T x A layer of zirconium oxide film is coated on the composite film, and a silver top electrode located on the uppermost layer is deposited on the zirconium oxide film.

2. A method for preparing a composite material memristor, used to prepare the composite material memristor as claimed in claim 1, characterized in that: The following steps are involved: Step 1: Preparation of Ti3C2T x powder; Step 2: Using Ti3C2T x Preparation of polyvinyl alcohol and Ti3C2T x Composite film; Step 3: Polyvinyl alcohol and Ti3C2T x The composite film was coated on the FTO glass substrate; Step 4: Polyvinyl alcohol and Ti3C2T x A zirconium oxide film is coated on the composite film; Step 5: Deposit a silver top electrode on the zirconium oxide film.

3. The method for preparing a composite material memristor according to claim 2, characterized in that: Preparation of Ti3C2T in step 1 x The powder process includes the following steps: Step 1.1: Remove aluminum atoms from the MAX phase material Ti3AlC2 by selective etching with a mixture of hydrochloric acid and hydrofluoric acid; Step 1.2: After the etching process is completed, the resulting suspension is thoroughly cleaned to adjust the pH of the solution to neutral; Step 1.3: The washed precipitate is dispersed in a lithium chloride solution by continuous stirring to obtain a multilayer Ti3C2T x Nanosheets; Step 1.4: Multilayer Ti3C2T x The nanosheets were redispersed in water and then treated by shaking, ultrasound and centrifugation to achieve single or few layers of Ti3C2T x Efficient separation of nanosheets; Step 1.5: Finally, these nanosheets are dehydrated through vacuum drying technology to form a dry powdery substance.

4. The method for preparing a composite memristor according to claim 2, characterized in that: In step 2, polyvinyl alcohol and Ti3C2T x The preparation of the composite film includes the following steps: Step 2.1: Prepare a 60 mg / mL polyvinyl alcohol solution; Step 2.2: Ultrasonic dispersion of Ti3C2T x The powder forms a suspension in ethanol; Step 2.3: Mix the polyvinyl alcohol solution and Ti3C2T x and ethanol suspension, and stirred at 50° C. for 2 hours to form a composite solution; Step 2.4: The composite solution was coated on a FTO glass substrate and then dried to form a thin film.

5. The method for preparing a composite memristor according to claim 2, characterized in that: In step 3, the zirconium oxide film is obtained by the following steps: Step 3.1: ultrasonically treating a mixed solution of ethanolamine, zirconium acetylacetonate and ethanol to form a zirconium oxide solution; Step 3.2: Apply the zirconium oxide solution to the polyvinyl alcohol and Ti3C2T x The composite film was baked at 285°C and subjected to high temperature oxygen annealing.

6. The method for preparing a composite material memristor according to claim 2, characterized in that: The silver top electrode is deposited by thermal evaporation using a metal mask.

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