Method for preparing compound film by using active particles

Abstract

The invention relates to the technical field of vacuum, and discloses a method for preparing a compound film by adopting active particles, which comprises the following steps: emitting at least one deposition particle beam to a sample; and emitting the active particles to the sample to form a compound film on the sample.

Description

Technical Field

[0001] The present disclosure relates to the field of vacuum technology, and in particular to a method for preparing a compound film using active particles and a method for preparing a semiconductor device. Background Art

[0002] Among the common epitaxial growth techniques, for example, metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) usually need to be carried out at higher temperatures; and although magnetron sputtering reduces the dependence on high temperature through high-energy ion assistance, it has a certain degree of damage to the film surface, making it difficult to obtain high-quality single crystal epitaxial films. Summary of the invention

[0003] The present disclosure provides a method for preparing a compound film, comprising:

[0004] emitting at least one beam of deposited particles toward the sample; and

[0005] Active particles are fired toward the sample to form a compound film on the sample.

[0006] The present disclosure provides a method for preparing a semiconductor device, comprising:

[0007] Prepare a compound film according to the method for preparing a compound film in any one of the embodiments of the present disclosure; and

[0008] Semiconductor devices are prepared using compound films. BRIEF DESCRIPTION OF THE DRAWINGS

[0009] In order to more clearly illustrate the embodiments of the present disclosure or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only one embodiment of the present disclosure. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0010] Figure 1A An example flow chart showing a method for preparing a compound film according to some embodiments of the present disclosure;

[0011] Figure 1B An exemplary flow chart showing a method for preparing a compound film according to other embodiments of the present disclosure;

[0012] Figure 1C An exemplary flow chart showing a method for preparing a compound film according to still other embodiments of the present disclosure;

[0013] Figure 2A A schematic diagram showing the structure of an active source according to some embodiments of the present disclosure;

[0014] Figure 2B A partial structural schematic diagram of an active source according to some embodiments of the present disclosure is shown;

[0015] Figure 2C According to some embodiments of the present disclosure, Figure 2B AA cross-section diagram;

[0016] Figure 2D According to other embodiments of the present disclosure, Figure 2B AA cross-section diagram;

[0017] Figure 3A A schematic diagram showing the structure of an active source according to other embodiments of the present disclosure;

[0018] Figure 3B According to some embodiments of the present disclosure, Figure 3A DD profile diagram;

[0019] Figure 3C According to other embodiments of the present disclosure, Figure 3A DD profile diagram;

[0020] Figure 4 A partial structural schematic diagram of an electromagnetic field generator according to some embodiments of the present disclosure is shown;

[0021] Figure 5 An enlarged view of a part of the structure of an electromagnetic field generator according to some embodiments of the present disclosure is shown;

[0022] Figure 6 According to some embodiments of the present disclosure Figure 2C or Figure 2D A magnified schematic diagram of part A;

[0023] Fig. 7A According to some embodiments of the present disclosure Figure 2C An enlarged schematic diagram of part B from another angle;

[0024] Figure 7B According to some embodiments of the present disclosure Figure 2D An enlarged schematic diagram of part B from another angle;

[0025] Figure 8 A schematic cross-sectional view of a flow restricting tube according to some embodiments of the present disclosure is shown;

[0026] Fig. 9 A schematic diagram showing the structure of a shunt tube according to some embodiments of the present disclosure is shown;

[0027] Fig. 10A According to some embodiments of the present disclosure Figure 2C An enlarged schematic diagram of part A from another angle;

[0028] Fig. 10B According to some embodiments of the present disclosure Figure 2C A schematic diagram of the enlarged view of part A from another angle;

[0029] Fig.11A According to some embodiments of the present disclosure Figure 2C An enlarged schematic diagram of part B at another angle;

[0030] Fig. 11B According to some embodiments of the present disclosure Figure 2D An enlarged schematic diagram of part B at another angle;

[0031] Fig.12 A schematic cross-sectional view showing a separator block according to some embodiments of the present disclosure;

[0032] Fig.13A A partial cross-sectional schematic diagram showing an active source according to some embodiments of the present disclosure;

[0033] Fig. 13B A partial cross-sectional schematic diagram showing an active source including a neutralizer according to other embodiments of the present disclosure;

[0034] Fig.14 A schematic diagram showing a sealing structure in which the outer side surface of the sealing ring according to some embodiments of the present disclosure may include a tapered surface;

[0035] Fig.15 A schematic diagram of a sealing structure is shown in which the outer side surface of a sealing ring according to some embodiments of the present disclosure may include a curved surface.

[0036] Fig.16 A structural schematic diagram showing the position setting of a magnet fixing mechanism according to some embodiments of the present disclosure;

[0037] Fig.17A A schematic diagram showing the structure of a magnetic field confinement mechanism according to some embodiments of the present disclosure;

[0038] Fig. 17B Show Fig.17A BB cross-section diagram;

[0039] Fig.18A A partial structural schematic diagram showing an active source according to other embodiments of the present disclosure;

[0040] Fig.18B Show Fig.18A CC profile of ;

[0041] Fig.19 A schematic diagram showing a three-dimensional structure of an active source according to some embodiments of the present disclosure;

[0042] Fig. 20A -C shows the geometric arrangement diagram of the magnets during simulation according to some embodiments of the present disclosure, wherein Fig. 20A shows the xy plane arrangement of the magnet; Fig. 20B The xz plane arrangement diagram of the magnet is shown; Fig. 20C A three-dimensional arrangement diagram of the magnets is shown;

[0043] Fig.21A -C shows the spatial distribution of the multi-section magnetic field obtained after the magnet simulation according to some embodiments of the present disclosure, wherein Fig.21A The spatial distribution of the magnetic field in multiple slices in the xy plane is shown; Fig. 21B The spatial distribution of the magnetic field in multiple slices of the xz plane is shown; Fig. 21C The three-dimensional multi-slice magnetic field spatial distribution is shown;

[0044] Fig.22A -C shows the spatial distribution of the surface magnetic field obtained after the magnet simulation according to some embodiments of the present disclosure, wherein Fig.22A shows the spatial distribution of the surface magnetic field in the xy plane; Fig. 22B The spatial distribution of the surface magnetic field in the xz plane is shown; Fig. 22C The spatial distribution of the surface magnetic field in the yz plane is shown;

[0045] Fig.23A -C shows the line result diagram obtained after the magnet simulation according to some embodiments of the present disclosure, wherein Fig.23A A line result graph is shown with the x-axis; Fig. 23B A line result graph showing the y-axis; Fig.23C A line result graph of the z-axis is shown;

[0046] Fig.24 The change of charged particle beam before and after the active source is equipped with a neutralizer according to some embodiments of the present disclosure is shown;

[0047] Fig.25A A schematic structural diagram of a vacuum system according to some embodiments of the present disclosure is shown;

[0048] Fig.25B A schematic diagram showing an epitaxial growth process of a vacuum system according to some embodiments of the present disclosure;

[0049] Fig.26A The RHEED diffraction pattern of Si(111) after removing the surface oxide at 920°C and cooling to room temperature shows 7*7 diffraction spots;

[0050] Fig.26B shows a Si(111) RHEED diffraction pattern taken at 920°C after surface oxide removal at 920°C;

[0051] Fig. 27The RHEED diffraction pattern after coating a 7nm single crystal Al film on the Si(111) surface is shown;

[0052] Fig.28 shows the RHEED diffraction pattern of the single crystal Al film surface after nitridation for 5 minutes;

[0053] Fig.29 shows the GaN (001) RHEED diffraction pattern after temperature-increasing degassing;

[0054] Fig.30 The RHEED diffraction pattern after single crystal Al film is plated on the GaN (001) surface is shown;

[0055] Fig.31 shows the RHEED diffraction pattern of the single crystal Al film surface after nitridation for 30 minutes;

[0056] Fig.32A shows the (002) plane rocking curves of GaN films epitaxially grown at different temperatures;

[0057] Fig.32B shows a scanning electron microscope cross-sectional image of a GaN film epitaxially grown at 350°C;

[0058] Fig.33 An exemplary flow chart showing a method of manufacturing a semiconductor device according to some embodiments of the present disclosure;

[0059] In the above drawings, the reference numerals represent:

[0060] 1000-vacuum system, 100, 100a-active source

[0061] 10, 10a-electromagnetic field generator, 11, 11a-RF power supply, 12-conduction line, 121-feeding line, 1211-feeding end, 122, 122a-inductor coil, 123-grounding line, 13-electrode feedthrough, 14-first connecting member, 15-support block, 16-signal shielding cover, 18, 18a-limiting block, 19, 19a-shielding shell

[0062] 20, 20a-plasma generating chamber, 21, 21a-chamber, 22, 22a-contraction section, 23 limiting assembly, 231 first limiting member, 232 second limiting member

[0063] 30, 30a-gas introduction assembly, 31, 31a-outer tube, 311-proximal end, 32-separator, 321-first connecting channel, 322-second connecting channel, 33-inlet inner tube, 331-main body, 332-expansion section, 34-flow limiting tube, 341-first gas channel, 342-second gas channel, 35-diverter tube, 351, 351a, 351b, 351c, 351d-diverter hole

[0064] 40, 40a-cooling device, 41, 41a-liquid inlet, 42-first connecting pipe, 43-second connecting pipe, 44-, 44a liquid outlet, 45 third connecting pipe, 46 fourth connecting pipe

[0065] 50, 50a-support mechanism, 51, 51a support flange, 52-through flange

[0066] 60, 60a-neutralizer, 61-through hole, 62-main body

[0067] 70, 70a-seal assembly, 71-seal ring, 72-seal nut

[0068] 80-Electrode

[0069] 90-magnetic field restraint mechanism, 91-magnet, 91a, 91b-magnet group, 911a-first row of magnets, 911b-second row of magnets, 911c-third row of magnets, 92-magnet cooling mechanism, 921-magnet inner cooling pipe, 922-magnet outer cooling pipe, 923-liquid inlet pipe, 924-liquid outlet pipe, 925-magnet inner liquid outlet pipe, 926-magnet cooling channel, 93-flange, 94-magnet fixing mechanism, 941-fixing ring, 942-support part

[0070] 200-vacuum chamber, 210-heater, 300-sample, 400-deposition source DETAILED DESCRIPTION

[0071] Some embodiments of the present disclosure will be described below in conjunction with the accompanying drawings. Obviously, the described embodiments are only exemplary embodiments of the present disclosure, rather than all embodiments.

[0072] In the description of the present disclosure, it should be noted that the terms "center", "up", "down", "left", "right", "vertical", "horizontal", "inside", "outside", "top", "bottom", "horizontal", "longitudinal" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present disclosure. In addition, the terms "first" and "second" are used for descriptive purposes only and cannot be understood as indicating or implying relative importance. In the description of the present disclosure, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "coupled" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection; it can be a mechanical connection or an electrical connection; it can be a direct connection or an indirect connection through an intermediate medium; it can be the internal connection of two elements. In the description of the present disclosure, the distal end or the distal side refers to an end or a side that penetrates into a vacuum environment (e.g., a vacuum chamber), and the proximal end or the proximal side refers to an end or a side opposite to the distal end or the distal side (e.g., an end or a side that is away from the vacuum chamber, or an end or a side that is close to the vacuum chamber wall in the vacuum chamber, etc.). Alternatively, the end or the side that is close to the driving device is the proximal end or the proximal side, and the end or the side that is away from the driving device is the distal end or the distal side. For those of ordinary skill in the art, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.

[0073] Figure 1A A flow chart of a method S100 for preparing a compound film according to some embodiments of the present disclosure is shown.

[0074] like Figure 1A As shown, in some embodiments of the present disclosure, the method S100 for preparing a compound film may include: in step S110, emitting at least one deposition particle beam to the sample. The method S100 for preparing a compound film may also include: in step S120, emitting active particles to the sample to form a compound film on the sample.

[0075] In some embodiments of the present disclosure, the active particles may include plasma or neutral particles.

[0076] In some embodiments of the present disclosure, step S120 may include emitting plasma toward the sample to form a compound film on the sample.

[0077] In some other embodiments of the present disclosure, step S120 may include emitting neutral particles toward the sample to form a compound film on the sample.

[0078] In some embodiments of the present disclosure, the plasma may include nitrogen plasma, hydrogen plasma, oxygen plasma, etc. In some embodiments of the present disclosure, the neutral particles may include neutral nitrogen, neutral hydrogen, neutral oxygen, etc. with kinetic energy.

[0079] In some embodiments of the present disclosure, the deposition particle beam may include a metal particle beam or a non-metal particle beam. In some embodiments of the present disclosure, the metal particle beam may include an aluminum particle beam, a gallium particle beam, etc. In some embodiments of the present disclosure, the non-metal particle beam may include a silicon particle beam, etc.

[0080] In some embodiments of the present disclosure, the compound film may include a single crystal compound film (e.g., a single crystal metal compound film) or a compound film of other forms (e.g., an amorphous (non-crystalline) compound film, a polycrystalline compound film, etc.). In some embodiments of the present disclosure, the single crystal compound film may include a single crystal aluminum nitride film, a single crystal gallium nitride film, etc. In some embodiments of the present disclosure, the compound film of other forms may include a silicon nitride film, a silicon oxide film, an amorphous aluminum oxide film, etc.

[0081] The preparation of compound films (e.g., single crystal metal compound films (including single crystal aluminum nitride films, etc.)) usually requires higher temperatures, which limits their practical applications. For example, the performance of two-dimensional semiconductor devices depends not only on the characteristics of the two-dimensional semiconductor channel material, but also to a large extent on the performance of the gate dielectric material. Amorphous oxide gate dielectric materials that perform well in traditional silicon technology, such as SiO2 and HfO2, have a large number of surface dangling bonds, and there are a large number of electron traps at the interface formed with the two-dimensional semiconductor channel material, which affects the performance of the two-dimensional semiconductor device. Although traditional single crystal gate dielectric materials can overcome the interface quality problem, they usually require higher process temperatures and post-annealing treatments, which can easily cause unintentional damage or unintentional doping to the two-dimensional semiconductor material. The lack of high-quality gate dielectric materials that match the two-dimensional semiconductor channel material is one of the important reasons for the large difference between the performance of two-dimensional semiconductor material devices and the theoretical calculated values. In some embodiments of the present disclosure, active particles (e.g., neutral nitrogen, nitrogen plasma, etc.) can be used to increase the chemical activity of nitrogen, so that nitrogen can react with the deposited particle material at near room temperature, and achieve near-room temperature preparation of compound films (e.g., single crystal aluminum nitride films).

[0082] In some embodiments of the present disclosure, emitting at least one deposition particle beam to the sample may include: emitting at least one deposition particle beam to the sample to form a deposition particle film. emitting active particles to the sample may include: emitting active particles to the deposition particle film to form a compound film.

[0083] In some embodiments of the present disclosure, the deposited particle film may include a single crystal film (e.g., a single crystal metal film) or a film of other forms (e.g., an amorphous (non-crystalline) film, a polycrystalline film, etc.). In some embodiments of the present disclosure, the single crystal film may include a single crystal aluminum film, a single crystal gallium film, etc. Other forms of films may include an amorphous silicon film, etc.

[0084] Figure 1B An exemplary flow chart of a method S100a for preparing a compound film according to other embodiments of the present disclosure is shown.

[0085] like Figure 1B As shown, in some embodiments of the present disclosure, the method S100a for preparing a compound film may include: in step S110a, emitting at least one deposition particle beam to the sample to form a deposition particle film. The method S100a for preparing a compound film may also include: in step S120a, emitting active particles to the deposition particle film to form a compound film.

[0086] In some embodiments of the present disclosure, step S120a may include emitting plasma toward the deposited particle film to form a compound film on the sample.

[0087] In some other embodiments of the present disclosure, step S120a may include emitting neutral particles toward the deposited particle film to form a compound film on the sample.

[0088] In some embodiments of the present disclosure, active particles provide active nitrogen for the preparation of nitrides and the like of deposited particle films (e.g., single crystal metal films, etc.). Active nitrogen particles can penetrate into, for example, the metal surface at near room temperature and form bonds with atoms in the crystal lattice to form an ordered structure to obtain single crystal nitrides, such as single crystal aluminum nitride.

[0089] In some embodiments of the present disclosure, emitting active particles toward the deposited particle film may include: emitting active particles toward the deposited particle film at a temperature of 0° C.-100° C.

[0090] In some embodiments of the present disclosure, the sample includes a single crystal semiconductor surface, and emitting at least one deposition particle beam to the sample to form a deposition particle film includes emitting at least one deposition particle beam to the single crystal semiconductor surface to epitaxially grow a deposition particle film on the single crystal semiconductor surface.

[0091] In some embodiments of the present disclosure, a deposited particle beam (eg, a metal particle beam) is used to perform low-temperature epitaxy of a metal film at low temperature using the wetting characteristics of a semiconductor substrate surface to form a deposited particle film (eg, a single crystal metal film).

[0092] In some embodiments of the present disclosure, the method for preparing a compound film may further include: annealing the deposited particle film. Annealing can improve the crystal quality of the deposited particle film, but the annealing temperature should not be too high, otherwise the surface of the deposited particle film (such as a metal film) will become rough.

[0093] In some embodiments of the present disclosure, the method for preparing a compound film may further include: during the epitaxial growth and deposition of the particle film, controlling the temperature of the surface of the single crystal semiconductor to not exceed 100°C.

[0094] In some other embodiments of the present disclosure, emitting active particles toward the sample may include: emitting active particles toward the sample during the process of emitting at least one deposition particle beam toward the sample, so as to form a compound film.

[0095] Figure 1C An exemplary flow chart 100b shows a method of preparing a compound film according to still other embodiments of the present disclosure.

[0096] like Figure 1C As shown, in some embodiments of the present disclosure, the method S100b for preparing a compound film may include: in step S110b, emitting at least one deposition particle beam to the sample to form a deposition particle film. The method S100b for preparing a compound film may also include: in step S120b, during the process of emitting at least one deposition particle beam to the sample, emitting active particles to the sample to form a compound film.

[0097] In some embodiments of the present disclosure, step S120b may include emitting plasma toward the sample during the process of emitting at least one deposition particle beam toward the sample to form a compound film.

[0098] In some other embodiments of the present disclosure, step S120b may include emitting neutral particles toward the sample during the process of emitting at least one deposition particle beam toward the sample to form a compound film.

[0099] In some embodiments of the present disclosure, the method for preparing a compound film, such as S100, S100a, S100b, etc., can be performed by a vacuum system (e.g., Fig.25A The vacuum system 1000 is shown in operation.

[0100] In some embodiments of the present disclosure, the method for preparing a compound film may further include: performing surface treatment on a surface of a sample (eg, a single crystal semiconductor) to remove contaminants or amorphous oxides on the surface of the sample.

[0101] In some embodiments of the present disclosure, surface treatment of a sample (eg, a single crystal semiconductor) substrate may include chemical wet treatment, heating treatment, and / or hydrogen plasma deoxidation treatment, etc. The purpose is to remove surface contaminants or amorphous oxides to expose a clean single crystal surface.

[0102] In some embodiments of the present disclosure, the method for preparing a compound film may further include: forming an epitaxial buffer layer on the surface of the single crystal semiconductor. The epitaxial buffer layer may improve the quality of the compound film.

[0103] In some embodiments of the present disclosure, the sample may include a single crystal silicon substrate, a single crystal aluminum nitride substrate or a single crystal gallium nitride substrate. In some embodiments of the present disclosure, the semiconductor substrate material and the metal material to be plated have a high lattice matching degree to effectively ensure the crystal quality of the epitaxial film.

[0104] In some embodiments of the present disclosure, active particles may be generated by an active source.

[0105] Figure 2A A schematic structural diagram of an active source 100 according to some embodiments of the present disclosure is shown. Figure 2B A partial structural schematic diagram of an active source 100 according to some embodiments of the present disclosure is shown. Figure 2C According to some embodiments of the present disclosure, Figure 2B AA cross-section diagram. Fig. 7A According to some embodiments of the present disclosure Figure 2C An enlarged schematic diagram of part B from another angle.

[0106] like Figure 2A , Figure 2B and Figure 2C As shown, in some embodiments of the present disclosure, the active source 100 may include an electromagnetic field generator 10 and a plasma generating chamber 20. The electromagnetic field generator 10 can be used to generate an electromagnetic field after being powered on, and the plasma generating chamber 20 is coupled to the electromagnetic field generator 10 and can be used to contain the working gas and the plasma generated by the working gas under the action of the electromagnetic field.

[0107] In some embodiments of the present disclosure, the electrons in the plasma generating chamber 20 perform cyclotron motion under the action of the electromagnetic field, which increases the probability of collision with gas molecules and the ionization efficiency of gas molecules, thereby generating plasma with a higher density. For example, the nitrogen plasma generated by the active source in some embodiments of the present disclosure can fully nitride the deposited particle film such as the single crystal metal gallium (Ga) film or the single crystal metal aluminum (Al) film attached to the substrate, and obtain a single crystal gallium nitride layer or a single crystal aluminum nitride layer by epitaxial growth.

[0108] Figure 3A Schematic diagrams of the structures of active sources 100a according to other embodiments of the present disclosure are shown. Figure 3B According to some embodiments of the present disclosure, Figure 3A DD cross-section diagram.

[0109] Such as 3A and Figure 3B As shown, the active source 100a may include an electromagnetic field generator 10a, a magnetic field confinement mechanism 90 and a plasma generating chamber 20a. The electromagnetic field generator 10a can be used to generate an electromagnetic field after being powered on, the magnetic field confinement mechanism 90 is used to generate a confined magnetic field, and the plasma generating chamber 20a is coupled to the electromagnetic field generator 10a and the magnetic field confinement mechanism 90, and can be used to contain the working gas and the plasma generated by the working gas under the action of the electromagnetic field and the confined magnetic field.

[0110] In some embodiments of the present disclosure, nitrogen, hydrogen or oxygen may be introduced into the Figure 2A , 2B 、2C、 Figure 3A , Figure 3B The active source 100 or 100a shown in the figure can be used to form nitrogen plasma, hydrogen plasma or oxygen plasma.

[0111] In some embodiments of the present disclosure, the active source 100 or 100a may further include an ion filter (not shown). The ion filter may be disposed in a shielding housing (e.g., Figure 2A The shielding shell 19 shown in the figure is located at the far end of the shielding shell 19, and covers the far end of the cavity 21 of the plasma generating chamber 20, and can be used to filter plasma. Through the screening of the ion filter, it is possible to suppress high-energy plasma from reaching the sample surface and reduce damage. The obtained nitrogen plasma, hydrogen plasma or oxygen plasma can be widely used in the growth of nitrides, nitrogen atom implantation and doping, oxide growth, oxygen atom implantation and doping, hydride growth and hydrogen atom surface cleaning in vacuum systems (for example, molecular beam epitaxy systems).

[0112] Figure 2D According to other embodiments of the present disclosure, Figure 2B AA cross-section diagram. Figure 3C According to other embodiments of the present disclosure, Figure 3A DD cross-section diagram. Figure 7B According to some embodiments of the present disclosure Figure 2D A magnified view of part B from another angle

[0113] like Figure 2D , Figure 3C , Figure 7B As shown, the active source 100 or 100a may further include a neutralizer 60. The neutralizer 60 is disposed at the far end of the plasma outlet of the plasma generating chamber 20. The neutralizer 60 may include a plurality of through holes 61. The plurality of through holes 61 are used to allow plasma to pass through and form neutral particles.

[0114] In some embodiments of the present disclosure, the neutralizer 60 may be grounded. The plasma exiting the plasma outlet of the plasma generating chamber 20 passes through the grounded neutralizer 60 and is converted into neutral particles. The grounding of the neutralizer 60 may promote the neutralization and exchange of the charges of the plasma.

[0115] In other embodiments of the present disclosure, the neutralizer 60 may be biased. The plasma exiting the plasma outlet of the plasma generating chamber 20 passes through the biased neutralizer 60 and is converted into neutral particles. The biased neutralizer 60 can control the plasma screening and acceleration process and improve the neutralization efficiency.

[0116] In some embodiments of the present disclosure, the kinetic energy of the neutral particles can be regulated by regulating the gas flow rate of the working gas. For example, the kinetic energy of the neutral particles can be adjusted between 0eV and 30eV (including this number), for example, neutral particles with kinetic energy of 0.5eV-30eV, 0.5eV-20eV, etc., so as to meet the needs of epitaxial growth. And the neutral particles obtained by the plasma source in some embodiments of the present disclosure are more reactive. For example, the nitrogen atoms generated by the active source in some embodiments of the present disclosure can fully nitride the deposited particle films such as single crystal metal gallium (Ga) films or single crystal metal aluminum (Al) films attached to the substrate, and obtain a single crystal gallium nitride layer or a single crystal aluminum nitride layer by epitaxial growth.

[0117] like Figure 2D As shown, in some embodiments of the present disclosure, the active source 100 may further include an electrode bias power supply (not shown) and an electrode 80. The electrode 80 is connected to the electrode bias power supply. The electrode 80 is disposed inside the proximal end of the plasma generating chamber 20 and is used to guide the charged particles in the plasma to the neutralizer 60.

[0118] In some embodiments of the present disclosure, the electrode 80 connected to the electrode bias power supply can be used to accelerate charged particles, thereby being used to increase the kinetic energy of neutral particles obtained from the neutralizer 60. For example, neutral particles with kinetic energy of any point value or range between 0eV-2000eV (including this number) can be obtained, including neutral particles with kinetic energy of 10eV-30eV, 20eV-1000eV, 50eV-200eV, 200eV-2000eV, etc. In some embodiments of the present disclosure, the kinetic energy of the neutral particles can also be regulated by regulating the output power of the electrode bias power supply.

[0119] In some embodiments of the present disclosure, Figure 2D and Figure 7B As shown, the neutralizer 60 may include a plate-shaped body 62, and a plurality of through holes 61 are formed on the body 62. The body 62 may be made of any suitable material, such as metal, carbon, etc. Figure 2C As shown in FIG. 7 , in some embodiments of the present disclosure, the ratio of the depth to the width of the through hole 61 is between 2:1 and 20:1. The depth is the length of the through hole 61 along the plasma outlet direction. In some embodiments, the through hole 61 is designed as a long hole, which can extend the path of the plasma in the neutralizer 60, thereby improving the neutralization efficiency. Figure 2C Although FIG. 7 shows that the through hole 61 is a straight hole, this is only exemplary, and the through hole 61 may also be designed as an oblique hole.

[0120] In some embodiments of the present disclosure, in operation, the plasma generated by the plasma generating chamber 20 passes through the through hole 61, hits the inner surface of the through hole 61 at a grazing angle, and is converted into neutral particles. The neutral particles can be used to reduce charging damage such as in epitaxial growth, etching and cleaning, and can be widely used in various production and experiments, such as microelectronic device manufacturing.

[0121] In some embodiments of the present disclosure, nitrogen, hydrogen or oxygen may be introduced into the Figure 2D , Figure 3C , Figure 7B The active source 100 or 100a is shown to form neutral nitrogen, neutral hydrogen or neutral oxygen.

[0122] Fig.24 The figure shows the change of charged particle beam before and after the active source 100 is equipped with a neutralizer according to some embodiments of the present disclosure.

[0123] like Fig.24 As shown, after the neutralizer 60 is installed, the charged particle flow (ion flow and electron flow) passing through the neutralizer 60 is substantially zero.

[0124] In some embodiments of the present disclosure, the kinetic energy of the neutral particles can also be controlled by adjusting the output power of the RF power supply 11. For example, neutral particles with kinetic energy of any point value or range between 0eV-2000eV can be controlled, including neutral particles with kinetic energy of 10eV-30eV, 20eV-1000eV, 50eV-200eV, 200eV-2000eV, etc.

[0125] In addition, in some embodiments, the working gas is decomposed into plasma by radio frequency inductive coupling. After the plasma passes through the neutralizer 60, a highly active neutral particle source is provided, which can meet the epitaxial growth of samples such as substrates, effectively reduce the temperature of epitaxial growth of the substrate, and obtain high-quality epitaxial films.

[0126] Figure 4 A partial structural schematic diagram of an electromagnetic field generator 10 according to some embodiments of the present disclosure is shown.

[0127] like Figure 2A-Figure 4As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may include a conductive line 12. In some embodiments, the electromagnetic field generator 10 may also include a radio frequency power source 11. Those skilled in the art will appreciate that the electromagnetic field generator 10 may not include the radio frequency power source 11, but may be separated from the radio frequency power source 11 and connected to an external radio frequency power source 11 during use.

[0128] like Figure 2A-Figure 4 As shown, the conducting line 12 may include a feeding line 121, an inductor 122 and a grounding line 123. The feeding line 121 may be used to connect to the RF power supply 11. The inductor 122 is connected to the feeding line 121 and is wound around the plasma generating chamber 20, and can be used to generate an electromagnetic field. The grounding line 123 is connected to the inductor 122 and can be used for grounding. The RF power supply 11 is electrically connected to the conducting line 12, and transmits a radio frequency current, such as a radio frequency current with a relatively low frequency (e.g., 13.56 MHz), to the conducting line 12, so that the inductor 122 generates an alternating magnetic field. As the radio frequency current continues to be transmitted, the alternating magnetic field of the inductor 122 will excite an induced electric field in the space around it, which can produce a cyclotron acceleration effect on the electrons in the plasma generating chamber 20 surrounding it, thereby increasing the probability of collision with gas molecules and increasing the ionization efficiency of gas molecules, thereby generating a plasma with a higher density.

[0129] Those skilled in the art will appreciate that, although an RF current with a frequency of 13.56 MHz is selected in some embodiments of the present disclosure, this is merely exemplary, and in other embodiments of the present disclosure, an RF current with a frequency of 27.12 MHz or other suitable frequencies may be passed through the inductor to generate an electromagnetic field. Figure 5 A partial enlarged view of the structure of the electromagnetic field generator 10 according to some embodiments of the present disclosure is shown.

[0130] like Figure 5As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may also include an electrode feedthrough 13, a first connector 14 and a second connector (not shown in the figure). The electrode feedthrough 13 connects the feed line 121 to the RF power supply 11, and the first connector 14 is arranged between the feed line 121 and the electrode feedthrough 13, and can be used to connect the feed line 121 and the electrode feedthrough 13. The first connector 14 is "L" shaped, and the feed end 1211 of the feed line 121 is fitted with the short side of the first connector 14, and abuts against the long side of the first connector 14 to form a conductive path. The distal end of the electrode feedthrough 13 is connected to the long side of the first connector 14 by bolts, and the RF current generated by the RF power supply 11 can be introduced into the feed line 121 through the first connector 14, and the electrode feedthrough 13 and the feed line 121 are detachably connected by bolts, which is convenient for maintenance and replacement. The second connector is arranged between the electrode feedthrough 13 and the RF power supply 11, and can be used to connect the electrode feedthrough 13 and the RF power supply 11. One end of the second connector is connected to the proximal end of the electrode feedthrough 13, and the other end is connected to the RF power source 11 through a bolt, and can be used to introduce the RF current generated by the RF power source 11 into the feed line 121. In some embodiments, the electrode feedthrough 13 can pass through a support flange (e.g. Figure 2A and Figure 2C The supporting flange 51, Figure 3A The support flange 51a) shown enables electrical feeding between the vacuum environment and the outside world.

[0131] Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the first connecting member 14 is in an "L" shape, this is merely exemplary, and the first connecting member 14 may also be in other suitable shapes, such as an "I" shape, an "S" shape, or a straight shape.

[0132] like Figure 4 and Figure 5 As shown, in some embodiments of the present disclosure, the conductive line 12 may include a first conductive line and a second conductive line. The first conductive line and the second conductive line are connected at the feed end 1211 of the feed line 121 (for example, forming a U-shaped connection structure), and form a double winding structure at the inductor 122. The first conductive line and the second conductive line are wound to form the feed line 121, the inductor 122, and the ground line 123 connected in sequence. In order to avoid confusion, the first conductive line and the second conductive line are no longer separately marked in the figure.

[0133] like Figure 4 As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may further include a protective member, which may be, for example, at least one insulating ceramic tube, which may be sleeved on the feed line 121 and the ground line 123 and may be used for insulation. The insulating ceramic tube may be composed of a plurality of small ceramic tubes, which may facilitate direction adjustment, and the insulating ceramic tube may also be composed of a whole ceramic tube.

[0134] Those skilled in the art will appreciate that in other embodiments, the electromagnetic field generator 10a may have Figure 4 , Figure 5 The same or similar structure of the electromagnetic field generator 10 shown is not described in detail here.

[0135] like Figure 2B -D. Fig. 7A As shown in FIG. 1B , in some embodiments of the present disclosure, the plasma generating chamber 20 may include a chamber body 21 and a contraction section 22. Figure 3B As shown, the inductor 122 can be wound around the cavity 21 , and the induced electric field generated by the inductor 122 covers the cavity 21 , so that the working gas is ionized into plasma in the cavity 21 .

[0136] Those skilled in the art will appreciate that in other embodiments, the plasma generating chamber 20a may have the same Figure 2B -D. Fig. 7A -B shows the same or similar structure of the plasma generating chamber 20, which will not be described in detail here.

[0137] Figure 6 According to some embodiments of the present disclosure Figure 2C or Figure 2D An enlarged schematic diagram of part A.

[0138] like Figure 2A -D. Figure 4-7B As shown, in some embodiments of the present disclosure, the active source 100 may further include a gas introduction component 30. The gas introduction component 30 may include an outer tube 31, a partition block 32, and an air intake inner tube 33. The partition block 32 is sealedly connected to the outer tube 31, and is located at the proximal end of the outer tube 31, and defines a proximal end portion 311 at the proximal end of the outer tube 31. The proximal end of the air intake inner tube 33 is sealedly penetrated in the outer tube 31 through the partition block 32, and is connected to a gas source (not shown in the figure) through the proximal end portion 311, and can be used to introduce gas generated by the gas source. At the same time, the partition block 32 also forms a watertight state between the interior of the outer tube 31 and its proximal end portion 311, preventing the coolant around the air intake inner tube 33 from penetrating into the proximal end portion 311. The air intake inner tube 33 may include a main body 331 and an expansion section 332 located at the distal end, and the expansion section 332 is engaged with the distal end of the outer tube 31, and can be used to input gas into the cavity 21. Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the outer tube 31 is in two sections and connected together by the separator 32, this is only exemplary. The outer tube may also be integrally formed, with the separator disposed inside the outer tube and defining the proximal end at the proximal end of the outer tube.

[0139] Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the main body 331 and the expansion section 332 of the inner intake pipe 33 are divided into two sections and connected by processes such as welding, this is merely exemplary, and the main body 331 and the expansion section 332 may also be formed as one piece.

[0140] Those skilled in the art will appreciate that in other embodiments, the active source 100a may have a configuration similar to that shown in FIG. Figure 2A -D. Figure 4-7B The gas introduction component 30a having the same or similar structure as the gas introduction component 30 shown will not be described in detail here.

[0141] Figure 8 FIG. 4 is a schematic structural diagram of a flow restricting tube 34 according to some embodiments of the present disclosure.

[0142] like Figure 2B -D. Fig. 7A -B. Figure 8 As shown, in some embodiments of the present disclosure, the gas introduction assembly 30 may further include a flow limiting tube 34. The flow limiting tube 34 is at least partially disposed in the expansion section 332, and the distal end extends into the contraction section 22 of the plasma generating chamber 20. The proximal outer diameter of the flow limiting tube 34 is greater than the inner diameter of the main body 331 of the air inlet inner tube 33, and the inner diameter of the flow limiting tube 34 is smaller than the inner diameter of the main body 331 of the air inlet inner tube 33. The flow limiting tube 34 may include a first gas channel 341 and a second gas channel 342, and the diameter of the first gas channel 341 may be greater than the diameter of the second gas channel 342. The working gas flows from the first gas channel 341 through the second gas channel 342 and then enters the plasma generating chamber 20, which can limit the flow of the working gas so that the gas molecules are fully ionized and the ionization efficiency is improved.

[0143] Those skilled in the art will understand that Figure 3A As shown, in other embodiments, the gas introduction component 30a may also include a flow restriction tube 34 ( Figure 3A not shown).

[0144] Fig. 9 A schematic structural diagram of a shunt tube 35 according to some embodiments of the present disclosure is shown.

[0145] like Figure 2B -D. Fig. 7A -B. Fig. 9As shown, in some embodiments of the present disclosure, the gas introduction assembly 30 may further include a shunt tube 35. The shunt tube 35 is sleeved at the distal end of the flow limiting tube 34, and the proximal end extends into the expansion section 332, and the distal end extends into the contraction section 22. The shunt tube 35 is provided at the distal end with at least one shunt hole 351 (e.g., shunt hole 351a, shunt hole 351b, shunt hole 351c, shunt hole 351d), which can be used to shunt the introduced working gas to increase the disorder between the gas molecules, fully ionize the gas molecules, and improve the ionization efficiency.

[0146] Those skilled in the art will understand that Figure 3A As shown, in other embodiments, the gas introduction component 30a may also include a shunt pipe 35 ( Figure 3A not shown).

[0147] Fig. 10A According to some embodiments of the present disclosure Figure 2C An enlarged schematic diagram of part A from another angle. Fig. 10B According to some embodiments of the present disclosure Figure 2C A schematic diagram of part A enlarged from another angle. Fig.11A According to some embodiments of the present disclosure Figure 2C FIG. 1 is a schematic diagram of part B enlarged from another angle. Fig. 11B According to some embodiments of the present disclosure Figure 2D A magnified view of part B from another angle

[0148] like Figure 2A-Figure 11B As shown, the active source 100 may also include a cooling device 40. In other embodiments, the active source 100a may also include a cooling device 40. The cooling device 40 may include a liquid inlet 41 (the liquid inlet pipe is not shown), a first connecting pipe 42, a second connecting pipe 43, a liquid outlet 44 (the liquid outlet pipe is not shown), a third connecting pipe 45 and a fourth connecting pipe 46. The conductive circuit 12 may include a hollow first conductor and a second conductor, and the first conductor and the second conductor are connected at the feeding end of the feeding circuit. The liquid inlet 41 is connected to the first conductor through the third connecting pipe 45 at the proximal end of the grounding circuit 123, and can be used to pass cooling liquid into the conductive circuit 12. The first connecting pipe 42 is connected to the second conductor at the proximal end of the grounding circuit 123, and is connected to the portion of the outer tube 31 located at the distal end of the partition block 32. The coolant enters the outer tube 31, and the second connecting tube 43 extends along the outer tube 31 and is connected to the outer tube 31 at the distal end. When the liquid level of the coolant in the outer tube 31 is higher than that of the second connecting tube 43, the coolant can be discharged from the second connecting tube 43 to ensure the cooling effect of the coolant on the gas introduction assembly 30. The liquid outlet 44 is connected to the proximal end of the second connecting tube 43 through the fifth connecting tube 46, and can be used to discharge the coolant in the outer tube 31.

[0149] In the process of generating ions by means of radio frequency inductive coupling, the inductor coil usually generates high-temperature heat, which can easily bring destructive risks to the active source itself, so the inductor coil itself also needs to be cooled. In some embodiments of the present disclosure, the coolant passes through the hollow first and second conductors to cool the feed line 121, the inductor coil 122, and the grounding line 123, and then cools the gas introduction component 30. The coolant circulation route is long and the cooling is sufficient, which prevents the equipment from being damaged due to overheating and effectively extends the service life of the equipment. The cooling device 40 can cool the conductive line 12 and the gas introduction component, simplifying the cooling pipeline, reducing welding, reducing the risk of poor sealing at the weld and reducing the processing cost. In some embodiments of the present disclosure, low-frequency and low-voltage alternating current is used, and even if the coolant is passed into the conductive line 12, there will be no conductivity problems. In addition, if Figure 4 As shown, the liquid inlet 41 and the liquid outlet 44 are both arranged on the supporting flange 51, and the pipeline hidden in the supporting flange 51 plays a role in cooling the supporting flange 51, thereby preventing the supporting flange 51 from being heated and degassing and affecting the system vacuum.

[0150] Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the cooling device 40 cools both the conductive line 12 and the gas introduction assembly 30, this is only a preferred embodiment. In some embodiments, only the conductive line 12 may be cooled, or only the gas introduction assembly 30 may be cooled, or the conductive line 12 or the gas introduction assembly 30 may be cooled independently. For example, the conductive line may also include a first conductive line and a second conductive line that are hollow inside, and the active source may also include a cooling device. The cooling device may include: a liquid inlet pipe, connected to the first conductive line at the proximal end of the grounding line, for introducing a coolant into the conductive line; and a liquid outlet, connected to the second conductive line at the proximal end of the grounding line, for discharging the coolant.

[0151] Fig.12 A schematic cross-sectional view of a separator block 32 according to some embodiments of the present disclosure is shown.

[0152] like Fig.12 As shown, in some embodiments of the present disclosure, the partition block 32 may include a first connecting channel 321 and a second connecting channel 322. The first connecting channel 321 and the second connecting channel 322 are L-shaped channels, and the first connecting channel 321 can be used to connect the first connecting pipe 42 with the outer pipe 31, and the second connecting channel 322 connects the second connecting pipe 43 with the liquid outlet 44.

[0153] Those skilled in the art can understand that, although the first connection channel 321 and the second connection channel 322 of the partition block 32 in some embodiments of the present disclosure are L-shaped channels, this is only exemplary, and the first connection channel and the second connection channel can also be S-shaped channels or Z-shaped channels. Similarly, although the first connection channel 321 and the second connection channel 322 are provided in the partition block 32 in some embodiments of the present disclosure, this is only exemplary, and the first connection hole and the second connection hole can also be provided in the partition block, and the first connection hole can be used to connect the first connection tube 42 with the outer tube 31, and the second connection hole can be used to connect the second connection tube 43 with the liquid outlet 44.

[0154] As shown in Figure 1, Figure 2C -D. Figure 4 and Figure 5 As shown, in some embodiments of the present disclosure, the active source 100 may further include a supporting mechanism 50. In some embodiments of the present disclosure, the active source 100 may further include a limiting block 18. The supporting mechanism 50 may include a supporting flange 51. The outer tube 31 is passed through the supporting flange 51. The limiting block 18 is arranged at the distal end of the outer tube 31, and the grounding line 123 is passed through the limiting block 18. The limiting block 18 can be used to fix the position of the grounding line 123, and when adjusting the angle and / or position of the conductive line 12, only the feeding line 121 needs to be adjusted. The supporting flange 51 or 51a can be used to install the active source 100 or 100a on the vacuum chamber to achieve vacuum sealing.

[0155] like Figure 3A As shown, in other embodiments, the active source 100a may include a support mechanism 50a. The support mechanism 50 may also include a straight flange 52, the distal end of the straight flange 52 is sealedly connected to the flange 93, and the proximal end of the straight flange 52 is connected to the support flange 51.

[0156] like Figure 2C -D. Fig. 7A -B and Fig.11A -B, in some embodiments of the present disclosure, the active source 100 may further include a sealing assembly 70. The sealing assembly 70 may include a sealing ring 71 and a sealing nut 72. The sealing ring 71 is sleeved on the contraction section 22 and is partially located in the expansion section 332 of the intake inner tube 33. The sealing nut 72 is threadedly connected to the expansion section 332 and can be used to compress the sealing ring 71 to seal the contraction section 22 and the expansion section 332 of the intake inner tube 33.

[0157] Those skilled in the art will appreciate that, in other embodiments, the active source 100a may also include a sealing component (eg Fig.18B The sealing component 70a may have the same or similar structure as the sealing component 70, which will not be described in detail herein.

[0158] Existing vacuum seals are mainly divided into seals made of synthetic materials such as rubber and metal materials such as sealing indium wire parts based on the materials of the sealing ring. Rubber synthetic materials have the advantages of high elasticity, high wear resistance and suitable mechanical strength, which makes them widely used in vacuum seals. However, they have large gas outflow rate and permeability, and cannot be baked at high temperature and are not resistant to radiation. The melting point of metal indium wire seals is low, and the baking temperature cannot be higher than 150°C. It is often used for vacuum sealing in low-temperature environments, and the indium wire is easy to flow after being pressed. In plasma research, due to the increase of different plasma powers or the observation of different plasma test effects for a long time, there have been phenomena of burning of sealing rubber ring parts and melting of sealing indium wire parts into the vacuum chamber, causing vacuum environmental pollution, thus affecting the results of plasma research.

[0159] Therefore, in some embodiments of the present disclosure, the sealing ring 71 may include pyrolytic boron nitride (PBN) and / or boron nitride (BN). For example, the sealing ring 71 may be made of pyrolytic boron nitride (PBN) material, or made of boron nitride (BN) material. The melting point of pyrolytic boron nitride (PBN) is 1750°C-2300°C, and the melting point of boron nitride (BN) can be as high as 2700°C, which can prevent the equipment from melting and deforming due to overheating, thereby greatly improving the sealing effect. In addition, PBN and BN are non-metallic materials. Parts using PBN and / or BN as sealing materials also have the characteristics of high temperature resistance, corrosion resistance, high resistance, good electrical insulation performance, smooth surface, no pores, and non-wetting with most semiconductor melts, good oxidation resistance and thermal shock resistance, so that the equipment will not interfere with the vacuum degree of the vacuum chamber when in use, and can better maintain the vacuum degree of the vacuum environment. At the same time, during the loading and unloading process, it can also protect the internal parts of the present invention.

[0160] like Figure 2A As shown, in some embodiments of the present disclosure, the electromagnetic field generator 10 may further include a shielding shell 19. The shielding shell 19 may be sleeved on the electromagnetic field generator 10 and may be used to shield electromagnetic signals. The proximal end of the shielding shell 19 is fixedly connected to the support flange 51.

[0161] Those skilled in the art will appreciate that, although in some embodiments of the present disclosure, the shielding shell 19 is only an integral shell, this is merely exemplary, and the shielding shell 19a may also be composed of multiple shells, for example, the shielding shell 19 may include a first shell and a second shell.

[0162] like Figure 3A As shown, in some other embodiments, the electromagnetic field generator 10a may also include a shielding shell 19a.

[0163] Fig.13AA partial cross-sectional schematic diagram of an active source 100 according to some embodiments of the present disclosure is shown. Fig. 13B A partial cross-sectional schematic diagram of an active source 100 including a neutralizer 60 according to other embodiments of the present disclosure is shown.

[0164] like Fig.13A -B, in some embodiments of the present disclosure, the plasma generating chamber 20 may further include a limiting component 23. The limiting component 23 may include a first limiting member 231 and a second limiting member 232. The first limiting member 231 is sleeved on the contraction section 22 of the plasma generating chamber 20, and the second limiting member 232 is arranged at the distal end of the shielding shell 19. The first limiting member 231 and the second limiting member 232 may be made of high melting point metals such as tantalum or molybdenum, which can block the electric field from diffusing outward, so that the plasma can converge within the range of the plasma generating chamber 20, limit the movement of the plasma to the proximal end of the shielding shell 19, prevent ion corrosion of the equipment, and extend the service life of the equipment.

[0165] like Figure 3B -C, in some other embodiments of the present disclosure, the plasma generating chamber 20a may also include a limiting component 23 (not shown in the figure).

[0166] Fig.14 A schematic diagram of a sealing structure is shown in which the outer side surface of the sealing ring 71 according to some embodiments of the present disclosure may include a conical surface. Fig.15 A schematic diagram of a sealing structure is shown in which the outer side surface of the sealing ring 71 according to some embodiments of the present disclosure may include a curved surface.

[0167] like Fig.14 and Fig.15 As shown, the sealing nut 72 and the sealing ring 71 cooperate with each other and are sleeved on the contraction section 22. The sealing nut 72 and the expansion section 332 are threaded to pre-tighten the sealing ring 71, so that the sealing ring 71 forms a line seal on the contact surface of the sealing nut 72, the expansion section 332 and the contraction section 22, thereby preventing the leakage of the medium on both sides and allowing the medium to flow in from the middle, with the characteristics of good sealing performance and easy disassembly.

[0168] In some embodiments of the present disclosure, Fig.14 As shown, the outer side surface of the sealing ring 71 may include a conical surface, and the expansion section 332 and the sealing nut 72 may include a conical concave surface that matches the outer side surface of the sealing ring 71. Those skilled in the art will understand that the outer side surface of the sealing ring 71 may include two conical surfaces that are arranged opposite to each other, and the cross section may be a triangle, a trapezoid, a triangle or a trapezoid with a truncated bottom angle, etc.

[0169] In some embodiments of the present disclosure, Fig.15As shown, the outer side surface of the sealing ring 71 may include an arc surface, and the expansion section 332 and the sealing nut 72 may include an arc concave surface that matches the outer side surface of the sealing ring 71. Those skilled in the art will understand that the arc surface may include a circular arc surface or an elliptical arc surface.

[0170] In some embodiments of the present disclosure, when the outer side surface of the sealing ring 71 may include a conical surface or an arc-shaped surface, it can withstand the pressure on both sides of the sealing nut 72 and the expansion section 332 without breaking or deforming, and at the same time can seal and connect the contraction section 22 and the expansion section 332 of the intake inner tube 33 to prevent the working gas from escaping into the vacuum chamber, causing a decrease in the vacuum degree and affecting the vacuum processing (for example, coating) effect.

[0171] In some embodiments of the present disclosure, the confining magnetic field is a closed magnetic field, and the central magnetic field direction of the confining magnetic field is horizontal (for example, Fig.22A and Fig. 22B shown).

[0172] In some embodiments, the electromagnetic field is in the form of electromagnetic waves in a plasma generating chamber (e.g., Figure 3B The electromagnetic waves propagate in the plasma generating chamber 20a shown, and are parallel to the confining magnetic field. For example, Fig.16 The electromagnetic field generated by the radio frequency current of the inductor 122a shown will propagate outward in the form of electromagnetic waves. The electromagnetic waves enter the plasma generating chamber (for example, Figure 3B The plasma generating chamber 20a shown in FIG. 20a is a plasma generating chamber. When the plasma discharge region propagates, the plasma generating chamber (eg, Figure 3B The electrons and ions in the plasma generating chamber 20a shown will perform cyclotron motion under the action of the electromagnetic field. The electromagnetic wave is split into a left-handed polarized component and a right-handed polarized component in the plasma discharge region. The right-handed polarized component rotates synchronously with the cyclotron motion electrons. The electrons will be continuously accelerated synchronously to obtain higher energy. Through the interaction between the electromagnetic wave and the plasma, the energy of the electrons is transferred to the plasma, which greatly increases the plasma density, thereby increasing the concentration of neutral particles. At the same time, a higher collision frequency also provides a higher density plasma under low pressure conditions. The design of the confined magnetic field allows the active source (for example, Figure 3A The active source 100a) shown is capable of operating under a wider range of operating gas pressures.

[0173] Fig.16 A schematic structural diagram showing the position setting of the magnet 91 according to some embodiments of the present disclosure.

[0174] In some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may include at least one magnet 91 to generate a confining magnetic field.

[0175] Those skilled in the art will appreciate that a closed magnetic field can be generated by any suitable number of magnets, and the magnets can also be in any suitable form, such as permanent magnets (e.g., magnets, etc.), electromagnets (e.g., coils, etc.), etc. In some embodiments, the magnetic field confinement mechanism 90 may include a magnetic coil (not shown in the figure) to generate a closed magnetic field.

[0176] like Fig.16 As shown, in some embodiments of the present disclosure, at least one magnet 91 is disposed on the periphery of the inductor coil 122a.

[0177] like Fig.16 As shown, in some embodiments of the present disclosure, at least one magnet 91 may include multiple magnets, such as symmetrically arranged magnet groups 91a and 91b, and both magnet groups 91a and 91b may include three rows of magnets arranged at intervals. Taking magnet group 91a as an example, it may include a first row of magnets 911a, a second row of magnets 911b, and a third row of magnets 911c arranged at intervals, wherein each row of magnets may include three magnets arranged at intervals in the horizontal direction.

[0178] Those skilled in the art will understand that Fig.16 The arrangement of the magnets shown is only exemplary. For example, the plurality of magnets 91 may include magnets in other arrangements, and the magnet groups 91a and 91b may also include magnets in other rows, such as one row of magnets, two rows of magnets, or four or more rows of magnets. It is also only exemplary that each row of magnets may include three magnets arranged in a transverse interval, and each row of magnets may also include other numbers of magnets, such as one magnet, two magnets, or four or more magnets.

[0179] like Fig.16 As shown, in some embodiments of the present disclosure, the magnet may be a cylindrical magnet. Those skilled in the art will appreciate that this is merely exemplary and magnets of other shapes may also be selected, such as cubic magnets, prismatic magnets, etc.

[0180] like Fig.16 As shown, in some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may further include a magnet fixing mechanism 94. The magnet fixing mechanism 94 may be used to set the magnet 91 at the periphery of the inductor 122a.

[0181] like Fig.16 As shown, in some embodiments, the magnet fixing mechanism 94 may include a support portion 942 for setting the magnet 91 on the periphery of the inductor 122. The support portion 942 may include a plurality of magnet fixing holes (not shown in the figure) for fixing a plurality of magnets. The support portion 942 may be roughly cylindrical, and may also include a plurality of portions arranged oppositely or at intervals, such as Fig.16The magnet fixing mechanism 94 may further include a fixing ring 941 , which is disposed at the distal end of the supporting portion 942 .

[0182] Fig.17A A schematic structural diagram of a magnetic field confinement mechanism 90 according to some embodiments of the present disclosure is shown. Fig. 17B Show Fig.17A BB cross-section diagram. Fig.18A A partial structural schematic diagram of an active source according to some other embodiments of the present disclosure is shown. Fig.18B Show Fig.23A CC cross-section diagram.

[0183] like Fig.17A and Fig.18B As shown, in some embodiments of the present disclosure, the magnetic field confinement mechanism 90 may further include a magnet cooling mechanism 92. Fig.18B As shown, the magnet cooling mechanism 92 may include a magnet inner cooling pipe 921 and a magnet outer cooling pipe 922. The magnet inner cooling pipe 921 is arranged on the inner side of the support portion 942 (the support portion 942 is omitted in the figure for convenience of illustration). The magnet outer cooling pipe 922 is sleeved outside the magnet inner cooling pipe 921 and arranged on the outer side of the support portion 942, and a magnet cooling channel 926 for circulating the coolant is formed between the magnet inner cooling pipe 921 and the magnet outer cooling pipe 922. Since the magnet inner cooling pipe 921 and the magnet outer cooling pipe 922 are respectively arranged on the inner side and the outer side of the support portion 942, a plurality of magnets 91 (for example, magnet groups 91a, 91b) can be located in the magnet cooling channel 926, so as to be immersed in the coolant, so that the cooling effect is enhanced.

[0184] like Fig.18B As shown, the magnet cooling mechanism 92 may further include a magnet cooling liquid inlet pipe 923 and a magnet cooling liquid outlet pipe 924. The magnet cooling liquid inlet pipe 923 is used to introduce cooling liquid into the magnet cooling channel 926. The magnet cooling liquid outlet pipe 924 is used to discharge the cooling liquid in the magnet cooling channel 926.

[0185] like Fig. 17B and 18B As shown, in some embodiments of the present disclosure, the magnet cooling mechanism 92 may further include a magnet cooling inner liquid outlet pipe 925, which extends along the magnet outer cooling pipe 922 and is connected to the magnet cooling channel 926 at its distal end. When the liquid level of the magnet cooling channel 926 is higher than the magnet cooling inner liquid outlet pipe 925, the coolant can be discharged from the magnet cooling inner liquid outlet pipe 925. The magnet cooling inner liquid outlet pipe 925 is connected to the magnet cooling liquid outlet pipe 924 and can be used to discharge the coolant in the magnet cooling channel 926.

[0186] The fixing ring 941 of the magnet fixing mechanism 94 can be arranged at the distal end of the magnet cooling mechanism 92 and sealedly connected to the distal end of the magnet cooling channel 926. The support portion 942 is connected to the fixing ring 941 and extends toward the proximal end of the magnet cooling channel 926. Fig.16 As shown, the magnetic field confinement mechanism 90 may further include a flange 93. The flange 93 is sealedly connected to the proximal end of the magnet cooling channel 926. The flange 93 may include a channel allowing the magnet cooling liquid inlet pipe 923 and the magnet cooling liquid outlet pipe 924 to pass through.

[0187] Fig.19 A schematic diagram of the three-dimensional structure of an active source 100 according to some embodiments of the present disclosure is shown.

[0188] like Fig.19 As shown, the active source 100 may further include a support block 15 and a signal shielding cover 16. The support block 15 is used to support the RF power source 11. The signal shielding cover 16 may be arranged as follows: Figure 5 The electrode feedthrough 13 shown, for example, is disposed in a signal shielding cover 16 to shield signal interference at the electrode feedthrough 13. In some embodiments, the signal shielding cover 16 may further include a fan (not shown) to dissipate heat from the shielded electrode feedthrough 13.

[0189] Fig. 20A -C shows the geometric arrangement diagram of the magnets during simulation according to some embodiments of the present disclosure, wherein Fig. 20A shows the xy plane arrangement of the magnet; Fig. 20B The xz plane arrangement diagram of the magnet is shown; Fig. 20C A three-dimensional arrangement of magnets is shown. Fig.21A -C shows some embodiments according to the present disclosure, for example Fig. 20A -C shows the geometric arrangement of the magnets, and the multi-section magnetic field spatial distribution obtained after the magnet simulation, where Fig.21A The spatial distribution of the magnetic field in multiple slices in the xy plane is shown; Fig. 21B The spatial distribution of the magnetic field in multiple slices of the xz plane is shown; Fig. 21C The three-dimensional multi-slice magnetic field spatial distribution is shown. Fig.22A -C shows some embodiments according to the present disclosure, for example Fig. 20A -C shows the geometric arrangement of the magnets, and the spatial distribution of the surface magnetic field obtained after the magnet simulation, where Fig.22A shows the spatial distribution of the surface magnetic field in the xy plane; Fig. 22B The spatial distribution of the surface magnetic field in the xz plane is shown; Fig. 22C The spatial distribution of the surface magnetic field in the yz plane is shown. Fig.23A -C shows some embodiments according to the present disclosure, for example Fig. 20A-C shows the geometric arrangement of the magnets, and the line result diagram obtained after the magnet simulation, where Fig.23A A line result graph is shown with the x-axis; Fig. 23B A line result graph showing the y-axis; Fig.23C The line result diagram of the z-axis is shown, and it can be seen that the magnetic flux density is evenly or relatively evenly distributed on the x-axis, y-axis and z-axis.

[0190] like Figures 20A-20C As shown, in some embodiments of the present disclosure, the following Fig.16 The magnet arrangement method is to set three rows of magnets from bottom to top, and conduct simulation experiments. The simulation results are as follows Figures 21A to 23C shown.

[0191] Those skilled in the art will appreciate that although Figure 20A-20C The magnet shown is shaped like a cylinder, but this is merely exemplary. In some embodiments of the present disclosure, magnet materials of other shapes, such as a rectangular parallelepiped magnet, may also be used.

[0192] Fig.25A A schematic structural diagram of a vacuum system 1000 according to some embodiments of the present disclosure is shown. Fig.25B A schematic diagram illustrating an epitaxial growth process of a vacuum system (eg, vacuum system 1000 ) according to some embodiments of the present disclosure.

[0193] like Fig.25A As shown, the vacuum system 1000 may include a vacuum chamber 200, an active source (e.g., Figure 2A The active source 100 or Figure 3A The active source 100a, etc. shown in the figure) and the sample 300. The active source 100 or 100a can be at least partially disposed in the vacuum chamber 200 through the support flange 51, and can be used to emit neutral particles to the sample 300 in the vacuum chamber 200, so as to perform various vacuum treatments, such as coating, cleaning, etching, etc.

[0194] like Fig.25A As shown, in some embodiments of the present disclosure, the vacuum system 1000 may further include a deposition source 400 . The deposition source 400 is vacuum-tightly connected to the vacuum chamber 200 , and is used to emit a deposition particle beam to the sample 300 .

[0195] like Fig.25A As shown, in some embodiments of the present disclosure, the deposition source 400 may include a metal source or a non-metal source. The metal source may include an aluminum (Al) evaporation source, a gallium (Ga) evaporation source, etc. The non-metal source may include, for example, a silicon (Si) evaporation source, etc.

[0196] In some embodiments of the present disclosure, the vacuum chamber 200 may further include a heater 210 for heating the sample.

[0197] like Fig.25B As shown, in some embodiments of the present disclosure, the method of preparing a compound film using active particles may include: a deposition source 400 (e.g., an aluminum evaporation source, a gallium evaporation source, a silicon evaporation source) emits at least one deposition particle beam to a sample 300. The active source 100 or 100a emits active particles to the sample 300 to form a compound film (e.g., a single crystal aluminum nitride film, a single crystal gallium nitride film, a single crystal silicon nitride film, etc.) on the sample 300.

[0198] like Fig.25B As shown, in some embodiments of the present disclosure, the method of preparing a compound film using active particles may include: a deposition source 400 (e.g., an aluminum evaporation source, a gallium evaporation source, a silicon evaporation source) emits a deposition particle beam to a sample 300 to form a deposition particle film (e.g., an aluminum film, a gallium film, a silicon film, etc.). The active source 100 or 100a emits active particles to the deposition particle film of the sample 300 to form a compound film (e.g., an aluminum nitride film, a gallium nitride film, a silicon nitride film, etc.).

[0199] like Fig.25B As shown, in some other embodiments of the present disclosure, the method of preparing a compound film using active particles may include: during the process of a deposition source 400 (for example, an aluminum evaporation source, a gallium evaporation source, or a silicon evaporation source) emitting a deposition particle beam to a sample 300, an active source 100 or 100a emits active particles to the sample 300 to form a compound film (for example, an aluminum nitride film, a gallium nitride film, a silicon nitride film, etc.).

[0200] In some embodiments of the present disclosure, a method for preparing a compound film (e.g., a single crystal metal compound film) using active particles may include: treating the surface of a single crystal Si (111) semiconductor to remove contaminants or amorphous oxides on the surface of the single crystal Si (111) semiconductor. Emitting an aluminum particle beam to the surface of the single crystal Si (111) semiconductor, and controlling the temperature of the surface of the single crystal Si (111) semiconductor not to exceed 100° C., thereby obtaining a single crystal aluminum film. After annealing the single crystal aluminum film, maintaining the temperature of the surface of the single crystal Si (111) semiconductor not to exceed 100° C., emitting active particles to the single crystal aluminum film, thereby obtaining a single crystal aluminum nitride film at near room temperature.

[0201] In some embodiments of the present disclosure, the preparation of a single crystal AlN film may include:

[0202] S1. The sample is a single crystal Si (111) substrate. The single crystal Si (111) substrate is subjected to surface deoxidation treatment. For example, a Si (111) polished wafer can be placed in a vacuum chamber (e.g., Fig.25AThe substrate is placed in a vacuum chamber 200 as shown, and then kept at 920°C for 20 minutes to remove surface oxides. The temperature of the single crystal Si (111) substrate is then lowered to 60°C to prepare for the deposition of a particle film. Fig.26A The RHEED diffraction pattern of Si(111) at room temperature shows 7*7 diffraction spots. Fig.26B The RHEED diffraction pattern of Si(111) after removing the surface oxide at 920°C is shown. It can be seen that the amorphous oxide on the surface of the single crystal Si(111) substrate has been cleaned;

[0203] S2. Open the baffle of the Al evaporation source (deposition source 400) and deposit a single-crystalline Al film of about 7 nm on the surface of the cleaned single-crystalline Si (111) substrate at a rate of 2 nm / min. The substrate temperature is always maintained at 60°C. Fig. 27 The RHEED diffraction pattern after coating a 7nm single-crystal Al film on the Si(111) surface is shown. The RHEED diffraction pattern after coating the single-crystal Al film shows fine stripes, indicating that the coated film is single-crystal Al. According to the interplanar spacing of the Si(2-20) crystal plane and RHEED fringe spacing, as well as the RHEED fringe spacing of the Al film at the same azimuth angle, the interplanar spacing of the Al film (110) can be obtained as , which is exactly the same as the interplanar spacing of the bulk Al(110) crystal plane;

[0204] S3. Keep the single crystal Al film at 100℃ for 15min to improve the crystal quality. No obvious changes were observed from the RHEED fringes;

[0205] S4. Maintain the sample temperature at 100°C, introduce nitrogen at a flow rate of 1 sccm, then turn on the active source and set the power to 450W. The active source emits nitrogen plasma to nitride the single crystal Al film. Fig.28 Figure 2 shows the RHEED diffraction pattern of the single crystal Al film surface after 5 minutes of nitridation. After 5 minutes of nitridation, the diffraction pattern still remains in the form of stripes, indicating that a single crystal AlN film has been obtained. The difference is that the stripe spacing has changed. Based on the new stripe spacing, the corresponding AlN interplanar spacing can be calculated as Compared with the theoretical value of bulk AlN (110) crystal plane Only a 1% difference.

[0206] In some embodiments of the present disclosure, the preparation of a single crystal AlN film may include:

[0207] (1) The sample may include sapphire and a GaN (001) substrate obtained by epitaxially growing a GaN (001) buffer layer on sapphire (for example, GaN (001) epitaxially grown on sapphire by a metal organic chemical vapor deposition (MOCVD) method). The surface of the single crystal GaN (001) substrate is subjected to a temperature-raising degassing treatment. First, the GaN substrate is placed in a vacuum chamber (for example, Fig.25A The substrate is placed in a vacuum chamber 200 as shown, and then kept at 700°C for 20 minutes to remove surface moisture. The substrate temperature is then lowered to 50°C to prepare for Al film deposition. Fig.29 The RHEED diffraction pattern of GaN (001) after surface degassing is shown. It can be seen that the RHEED diffraction pattern of GaN (001) after surface degassing presents bright and sharp diffraction fringes, indicating that the GaN substrate has high crystal quality and a clean surface.

[0208] (2) The baffle of the Al evaporation source (deposition source 400) was opened, and about 10 nm of Al was plated on the GaN (001) surface at a rate of 1.3 nm / min. The substrate temperature was always maintained at 50°C. Fig.30 The RHEED diffraction pattern after the single crystal Al film is plated on the GaN (001) surface is shown. The RHEED diffraction pattern after Al plating is still fine stripes, indicating that the plated film is an Al single crystal. According to the interplanar spacing along the GaN (1-10) crystal plane The RHEED fringe spacing and the RHEED fringe spacing of the Al film at the same azimuth angle can be used to calculate the interplanar spacing of the (110) crystal plane of the Al film: The bulk value of Al(110) It is relatively close (the difference is 3.5%). Considering that Al is subjected to tensile stress from the underlying GaN substrate when it is epitaxially grown on GaN, it is reasonable that the lattice is expanded along the in-plane direction.

[0209] (3) The sample coated with single crystal epitaxial Al film was kept at 100°C for 15 min to improve the crystal quality. The RHEED stripes showed no obvious change.

[0210] (4) Maintaining the sample temperature at 100°C, nitrogen was introduced at a flow rate of 1 sccm, and then the active source was turned on and the power was set to 450 W. The active source emitted nitrogen plasma to nitride the single-crystalline metal aluminum film. Fig.31 The RHEED diffraction pattern of the single crystal Al film surface after nitridation for 30 minutes is shown. The diffraction pattern still maintains the stripe shape, indicating that the AlN single crystal film is obtained. The difference is that the stripe spacing has changed. According to the new stripe spacing, the corresponding crystal plane spacing can be calculated as Compared with the interplanar spacing of the (110) plane of bulk AlN Considering the (110) interplanar spacing of the Al film before nitridation, Relative body value It also increases by 3.5%. It is reasonable that the interplanar spacing of the (110) plane of the AlN single crystal film increases accordingly.

[0211] In some embodiments, the generation rate of aluminum nitride can be changed by changing the power of the RF source of the active source and the flow rate of the working gas (eg, nitrogen). In some embodiments, the single-crystal aluminum nitride film of different thickness can also be synthesized by changing the nitridation time.

[0212] In some embodiments of the present disclosure, plasma is obtained by using an active source, which can react with metal aluminum at near room temperature to achieve near-room temperature preparation of single-crystalline aluminum nitride film. The single-crystalline aluminum nitride film with an atomically smooth surface is obtained by using the wettability of metals on semiconductor surfaces at low temperatures and near-room temperature nitridation processes.

[0213] In some embodiments of the present disclosure, the sample may include a Si (111) substrate and an aluminum nitride (AlN) buffer layer (eg, epitaxially grown) on the Si (111) substrate. Fig.25A In the vacuum system 1000 shown, the deposition source 400 is an aluminum evaporation source, and the active source 100 or 100a emits a neutral nitrogen beam to obtain an aluminum nitride (AlN) buffer layer, thereby obtaining an AlN / Si (111) sample. Fig.25A The vacuum system 1000 shown can be used to subsequently grow a series of GaN epitaxial layers on the resulting AlN / Si(111) sample at a lower growth temperature than conventional (eg, 680-750° C. for plasma assisted molecular beam epitaxy (PAMBE)).

[0214] like Fig.25B As shown, in some other embodiments of the present disclosure, the method of preparing a compound film using neutral particles may include: during the process of the deposition source 400 (for example, a gallium evaporation source) emitting a deposition particle beam to the sample 300, the active source 100 or 100a emits neutral particles (for example, a neutral nitrogen beam) to the sample 300 to form a GaN epitaxial layer.

[0215] Fig.32A The (002) rocking curves of GaN films epitaxially grown at different temperatures in a vacuum system according to some embodiments of the present disclosure are shown. Fig.32B A scanning electron microscope cross-sectional image of a GaN film epitaxially grown at 350°C is shown.

[0216] For GaN epitaxy, the active sources were operated at the same RF power of 300 W and the same nitrogen flow rate of 3 sccm. The GaN sample prepared at 720 °C was used as a reference. Fig.32A It shows that the (002) rocking curves of GaN epitaxially grown at 450°C and 720°C almost completely overlap. Fig.32A As shown, the half-width at half maximum of the (002) rocking curve of GaN epitaxially grown at 450°C and 720°C is 0.34°, indicating that the crystal quality of the GaN epitaxial film is almost unaffected by the substrate temperature in the range of 450°C-720°C. This shows that the use of neutral particles can achieve single-crystal GaN epitaxial growth similar to that at high temperatures at 450°C. Below 450°C, the rocking curve of GaN (002) tends to broaden, indicating that the crystal quality decreases with decreasing substrate temperature, which is related to the insufficient migration of atoms on the substrate surface at low temperatures. However, even the GaN film obtained at 200°C still has a narrow rocking curve (half-width of 0.5°), indicating that the epitaxial GaN at this temperature still has a high crystal quality. The neutral particles with adjustable kinetic energy obtained by using the active source in any one of the embodiments of the present disclosure are used for molecular beam epitaxy to achieve near-room temperature epitaxy of GaN.

[0217] Fig.32B The SEM cross-sectional image of the GaN sample grown epitaxially at 350°C is shown, showing a clear AlN / GaN interface prepared on the Si substrate.

[0218] According to some embodiments of the present disclosure, the active source 100 or 100a provides more abundant adjustable parameters, and the kinetic energy of the neutral particles can be adjusted by adjusting the RF power of the active source, the output power of the electrode bias power supply, the flow rate of the working gas, etc., to improve the flexibility, adaptability and controllability of vacuum treatment using neutral particles, such as improving the controllability of epitaxial growth of compound films. For example, in some embodiments, the generation rate of aluminum nitride can be changed by changing the power of the RF source of the active source and the flow rate of the working gas nitrogen.

[0219] According to the active source 100 or 100a of some embodiments of the present disclosure, the kinetic energy of the neutral particles can be controlled within an appropriate range, which can not only overcome the chemical reaction barrier and promote the growth of the thin film, but also avoid the lattice damage problem caused by the charged particles, thereby achieving epitaxial growth similar to that at high temperature at a much lower temperature.

[0220] In some embodiments, the active source can output active nitrogen particles with different kinetic energies, which may include nitrogen molecules and a small amount of nitrogen atoms. The kinetic energy of the active nitrogen particles can be used to further regulate the nitridation ability, thereby changing the film thickness of the single crystal aluminum nitride.

[0221] Fig.33 An exemplary flowchart S1000 of a method for manufacturing a semiconductor device according to some embodiments of the present disclosure is shown.

[0222] like Fig.33As shown, in some embodiments of the present disclosure, the method S1000 for preparing a semiconductor device may include: in step S1100, preparing a compound film using the method for preparing a compound film using active particles according to any embodiment of the present disclosure. The method S1000 for preparing a semiconductor device may include: in step S1200, preparing a semiconductor device using the compound film.

[0223] In some embodiments of the present disclosure, a single crystal metal compound film can be used as a gate dielectric layer. For example, according to the method of preparing a single crystal metal compound film using active particles in some embodiments of the present disclosure, a single crystal metal compound film (for example, a single crystal AlN film) can be obtained at near room temperature, which can be used as a gate dielectric layer.

[0224] In some embodiments of the present disclosure, a single-crystalline aluminum nitride film obtained at near room temperature can be peeled off from the single-crystalline semiconductor surface of the sample. The peeled single-crystalline metal compound film (e.g., single-crystalline AlN film) can be transferred to a two-dimensional semiconductor channel material (e.g., molybdenum disulfide) as a gate dielectric layer. Single-crystalline aluminum nitride has an ultra-wide bandgap, a high breakdown electric field, and high thermal conductivity. As a gate dielectric layer in a high electron mobility transistor (GaN HEMT) device, it can significantly reduce the current leakage rate of the device and suppress the current collapse effect.

[0225] In some embodiments of the present disclosure, a compound film (e.g., a single crystal AlN film, a single crystal GaN film) can be used as a piezoelectric layer. For example, due to the high acoustic velocity, the single crystal AlN film is adapted to higher frequencies, which meets the requirements of the current development of wireless communications towards high frequencies, and can be used as a piezoelectric layer of a thin film bulk acoustic resonator (FBAR) filter, for example.

[0226] In some embodiments of the present disclosure, a compound film (eg, a single crystal metal compound film) may be doped with a metal to form a doped compound film as a piezoelectric layer.

[0227] It should be pointed out that the above are only exemplary embodiments of the present disclosure and are not intended to limit the present disclosure. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present disclosure should be included in the protection scope of the present disclosure.

Claims

1. A method for preparing a compound film, characterized in that: include: emitting at least one deposition particle beam toward the sample; as well as Active particles are emitted toward the sample to form a compound film on the sample.

2. The method for preparing a compound film according to claim 1, characterized in that: The active particles include plasma or neutral particles.

3. The method for preparing a compound film according to claim 2, characterized in that: The plasma includes nitrogen plasma, hydrogen plasma or oxygen plasma; or The neutral particles include neutral nitrogen, neutral hydrogen or neutral oxygen with kinetic energy.

4. The method for preparing a compound film according to claim 1, characterized in that: Emitting the at least one deposition particle beam toward the sample comprises: emitting the at least one deposition particle beam toward the sample to form a deposition particle film; The emitting the active particles toward the sample comprises: The active particles are emitted toward the deposited particle film to form a compound film.

5. The method for preparing a compound film according to claim 4, characterized in that: The step of emitting the active particles toward the deposited particle film comprises: The active particles are emitted toward the deposited particle film at a temperature of 0° C. to 100° C.

6. The method for preparing a compound film according to claim 4, characterized in that: The sample includes a single crystal semiconductor surface, and emitting the at least one deposition particle beam to the sample to form a deposition particle film includes emitting the at least one deposition particle beam to the single crystal semiconductor surface to epitaxially grow a deposition particle film on the single crystal semiconductor surface; and / or The method for preparing a compound film further includes: annealing the deposited particle film.

7. The method for preparing a compound film according to claim 6, characterized in that: Also includes: During the epitaxial growth and deposition of the particle film, the temperature of the surface of the single crystal semiconductor is controlled not to exceed 100°C.

8. The method for preparing a compound film according to claim 1, characterized in that: The step of emitting active particles toward the sample comprises: During the process of emitting at least one deposition particle beam toward the sample, active particles are emitted toward the sample to form the compound film.

9. The method for preparing a compound film according to claim 1, characterized in that: The method for preparing the compound film further comprises: Performing surface treatment on the sample to remove contaminants or amorphous oxides on the surface of the sample; and / or An epitaxial buffer layer is formed on the surface of the sample.

10. The method for preparing a compound film according to claim 9, characterized in that: The sample includes a single crystal silicon substrate, a single crystal aluminum nitride substrate or a single crystal gallium nitride substrate; and / or The at least one deposition particle beam includes an aluminum particle beam or a gallium particle beam.

11. The method for preparing a compound film according to claim 2, characterized in that: The active particles are generated by an active source, and the active source includes: an electromagnetic field generator for generating an electromagnetic field when powered; and The plasma generating chamber is coupled with the electromagnetic field generator and is used to contain the working gas and the plasma generated by the working gas under the action of the electromagnetic field.

12. The method for preparing a compound film according to claim 11, characterized in that: The active source also includes: The neutralizer is arranged at the far end of the plasma outlet of the plasma generating chamber, and the neutralizer comprises a plurality of through holes for allowing the plasma to pass through and form neutral particles.

13. The method for preparing a compound film according to claim 12, characterized in that: The neutralizer is grounded or the neutralizer is biased.

14. The method for preparing a compound film according to claim 12, characterized in that: The active source also includes: an electrode bias power supply; and The electrode is connected to the electrode bias power supply and is arranged inside the proximal end of the plasma generating chamber to guide the charged particles to the neutralizer.

15. The method for preparing a compound film according to claim 12, characterized in that: The ratio of the depth to the width of the through hole is 2:1-20:1; and / or The kinetic energy of the neutral particles is between 0 eV and 2000 eV.

16. The method for preparing a compound film according to any one of claims 11 to 15, characterized in that: The active source also includes a magnetic field confinement mechanism for generating a confining magnetic field; The plasma generating chamber is coupled with the electromagnetic field generator and the magnetic field confinement mechanism, and is used to contain the working gas and the plasma generated by the working gas under the action of the electromagnetic field and the confinement magnetic field.

17. The method for preparing a compound film according to claim 16, characterized in that: The confining magnetic field is a closed magnetic field, and the central magnetic field direction of the confining magnetic field is horizontal; and / or The electromagnetic field propagates in the plasma generating cavity in the form of electromagnetic waves, and the electromagnetic waves are parallel to the confining magnetic field.

18. The method for preparing a compound film according to any one of claims 11 to 15, characterized in that: The electromagnetic field generator comprises: Conductive lines, including: A feeding line, used for connecting to a radio frequency power source; an inductor coil connected to the feed line and wound around the plasma generating chamber for generating an electromagnetic field; and A grounding circuit is connected to the inductor.

19. The method for preparing a compound film according to claim 18, characterized in that: The conductive line includes a first conductive line and a second conductive line, The first conductive wire and the second conductive wire are connected at a feeding end of the feeding line, and form a double winding structure at the inductor.

20. The method for preparing a compound film according to claim 18, characterized in that: The plasma generating chamber comprises a chamber body and a contraction section, and the inductor coil is wound around the chamber body. The active source also includes a gas introduction component, The gas introduction component comprises: External pipe; a separator block sealingly connected to the outer tube and defining a proximal end portion at the proximal end of the outer tube; and The inner air intake tube has a proximal end that is sealed and penetrates the outer tube through the partition block, and is connected to the gas source through the proximal end, so as to introduce the gas generated by the gas source; the inner air intake tube includes a main body and an expansion section at the distal end, and the expansion section is engaged with the distal end of the outer tube, so as to input the gas into the cavity.

21. The method for preparing a compound film according to claim 20, characterized in that: The neutral beam active source also includes: Seal kit, comprising: a sealing ring, sleeved on the contraction section and partially located in the expansion section of the intake inner pipe; and A sealing nut is threadedly connected to the expansion section and is used to compress the sealing ring to seal the contraction section and the expansion section of the intake inner pipe.

22. The method for preparing a compound film according to claim 21, characterized in that: The outer side surface of the sealing ring includes a conical surface or an arcuate surface, and the expansion section and the sealing nut include a conical concave surface or an arcuate concave surface matching the outer side surface of the sealing ring; and / or The sealing ring comprises pyrolytic boron nitride and / or boron nitride.

23. The method for preparing a compound film according to claim 18, characterized in that: The conductive line includes a first conductive wire and a second conductive wire which are hollow inside. The neutral beam active source further comprises a cooling device, The cooling device comprises: a liquid inlet, connected to the first conducting wire at a proximal end of the grounding circuit, and used for introducing cooling liquid into the conducting circuit; and A liquid outlet pipe is connected to the second wire at the proximal end of the grounding line and is used for discharging cooling liquid.

24. A method for preparing a semiconductor device, comprising: Prepare a compound film according to the method for preparing a compound film according to any one of claims 1 to 23; as well as A semiconductor device is prepared using the compound film.

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