Optical sensor and visible light multicolor detector

Abstract

The invention belongs to the technical field of semiconductor devices and photoelectric sensors, and particularly relates to a light sensor and a visible light multicolor detector. The printed circuit board is provided with at least one integrated circuit chip and at least one visible light multicolor detector electrically connected with the integrated circuit chip; welding pads are arranged at the top and the bottom of the printed circuit board, and the welding pad located on one side of the top of the printed circuit board is electrically connected with an integrated circuit chip through a metal connecting wire; and the resin packaging colloid covers the top of the printed circuit board so as to protect the integrated circuit chip, the visible light multi-color detector and the metal connecting wire. According to the invention, the interference of infrared light can be reduced, the conversion efficiency of visible light is improved, the photosensitive area is reduced, and the manufacturing cost of the sensor is reduced.

Description

Technical Field

[0001] The present application belongs to the technical field of semiconductor devices and photoelectric sensors, and specifically relates to a light sensor and a visible light multi-color detector. Background Art

[0002] With the popularization of smart terminal devices such as mobile phones and tablets, the usage time of users is increasing, and their usage scenarios are becoming more diverse. Adjusting the screen brightness and the color temperature of the displayed content according to the visible light illumination and color temperature in the usage environment can improve the recognition of the screen content, reduce visual fatigue, and reduce the user's cognitive bias on the displayed color, thereby improving the user experience.

[0003] Problems with existing technologies: Traditional light sensors use silicon photodiodes as ambient light detectors and use optical films with bandpass filtering functions to achieve the resolution and filtering of visible light of different colors. Usually, silicon-based detectors are manufactured with the integrated circuit (IC) in the sensor using the complementary metal oxide semiconductor (CMOS) standard process, and use Bayer color filters to resolve colors, which results in a loss of photoelectric conversion efficiency. The environment often contains near-infrared light that is invisible to the human eye. The perception of silicon materials to this invisible light will affect their measurement of visible light illumination, and additional optical filtering or algorithms are needed to correct this interference, further reducing the sensor's conversion efficiency and increasing the manufacturing difficulty and use cost of light sensors. Summary of the invention

[0004] The purpose of this application is to provide a visible light multi-color detector that is insensitive to infrared light while improving the conversion efficiency of visible light, reducing the photosensitive area, and reducing the manufacturing cost of the sensor.

[0005] The technical solutions adopted in this application are as follows: A light sensor, comprising: Printed circuit boards; The printed circuit board is provided with at least one integrated circuit chip and at least one visible light multi-color detector electrically connected to the integrated circuit chip; The top and bottom of the printed circuit board are both provided with welding pads, and the welding pad located on one side of the top of the printed circuit board is electrically connected to the integrated circuit chip through a metal connecting wire; as well as A resin encapsulation colloid covering the top of the printed circuit board to protect the integrated circuit chip, the visible light multi-color detector and the metal connecting wires; Wherein, any side of the visible light multi-color detector is used to receive the light signal to be measured, and the light signal to be measured is converted into multiple groups of electrical signals through the visible light multi-color detector and transmitted to the integrated circuit chip.

[0006] A visible light multicolor detector, comprising: A first surface functional layer and a second surface functional layer; A contact layer and a photoelectric conversion layer are alternately arranged between the first surface functional layer and the second surface functional layer and on one side of the first surface functional layer; A substrate is provided on a side adjacent to the second surface functional layer, and the substrate is connected to the contact layer on a side facing away from the first surface functional layer.

[0007] The first surface functional layer or the second surface functional layer that initially receives the light signal to be measured is set as the initial surface functional layer, and the initial surface functional layer is an optical thin film layer.

[0008] The optical film layer is an anti-reflection and anti-transmission film.

[0009] The light signal to be measured is incident from one side of the first surface functional layer, and the second surface functional layer corresponding to the same group as the first surface functional layer is a soldering layer.

[0010] The substrate is made of semiconductor material, and is connected to the photoelectric conversion layer and the contact layer through epitaxial growth.

[0011] The light signal to be measured is incident from the second surface functional layer, and the surface of the first surface functional layer corresponding to the same group as the second surface functional layer is a mirror layer.

[0012] The substrate is a transparent material, and is combined with a layered structure arranged on the top of the substrate. The layered structure includes a multi-layer photoelectric conversion layer, a contact layer, an electrode, and an optical film layer.

[0013] The photoelectric conversion layer is a compound semiconductor material structure layer.

[0014] A visible light multicolor detection method comprises the following steps: Acquiring an optical signal and passing the optical signal through either side of the compound semiconductor material structure; The optical signal is converted into an electrical signal, and the absorption limit wavelength of the photoelectric conversion layer is increased in sequence, so that the polychromatic light can be detected separately according to the absorption of different wavelengths.

[0015] The technical effects achieved by this application are: The present application uses a stacked design of the photoelectric conversion area, which reduces the photosensitive area, avoids the efficiency loss caused by reflection of the optical film system in the traditional solution, and improves the photoelectric conversion efficiency. At the same time, semiconductor materials that do not respond to infrared light can be selected as the photoelectric conversion layer to avoid interference from near-infrared light. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 is a schematic diagram of the structure of the visible light multicolor detector in Example 1 of the present application; Figure 2 is a schematic diagram of the structure of the optical sensor in the first embodiment of the present application; Figure 3 is the spectrum measurement result of the light sensor in the embodiment of the present application; Figure 4 is a schematic diagram of the structure of the visible light multicolor detector in the second embodiment of the present application; Figure 5 This is a schematic diagram of the optical sensor structure in Example 2 of the present application.

[0017] In the accompanying drawings, the components represented by the reference numerals are listed as follows: 101, first surface functional layer; 102, first contact layer; 103, first photoelectric conversion layer; 104, second contact layer; 105, second photoelectric conversion layer; 106, third contact layer; 107, third photoelectric conversion layer; 108, fourth contact layer; 109, substrate; 110, second surface functional layer; 111, first electrode; 112, second electrode; 113, third electrode; 114, fourth electrode; 201. Printed circuit board; 202. Integrated circuit chip; 203. Visible light multi-color detector; 204. Metal connecting wire; 205. Resin encapsulation colloid; 206. Solder pad; 207. Light signal to be measured; 208. Bonding metal. DETAILED DESCRIPTION

[0018] In order to make the purpose and advantages of the present application more clearly understood, the present application is specifically described below in conjunction with the embodiments. It should be understood that the following text is only used to describe one or several specific implementations of the present application, and does not strictly limit the scope of protection specifically requested by the present application.

[0019] It should be noted that the terms "first", "second", etc. are only used for descriptive purposes and shall not be understood as indicating or implying relative importance. The terms "including" and "having" and any variations thereof in the specification and claims of this application and the above-mentioned drawings are intended to cover non-exclusive inclusions. For example, a process, method, system, product or apparatus comprising a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or are inherent to these processes, methods, products or apparatus.

[0020] like Figure 1 and Figure 2As shown, a light sensor includes a printed circuit board 201, on which is disposed at least one integrated circuit chip 202 and at least one visible light multi-color detector 203 electrically connected to the integrated circuit chip 202, and solder pads 206 are disposed on the top and bottom of the printed circuit board 201, and the solder pad 206 located on one side of the top of the printed circuit board 201 is electrically connected to the integrated circuit chip 202 through a metal connecting wire 204.

[0021] Furthermore, the optical sensor further includes a resin encapsulation colloid 205 covering the top of the printed circuit board 201 to protect the integrated circuit chip 202 , the visible light multi-color detector 203 and the metal connecting wire 204 .

[0022] According to the above structure, by integrating the visible light multi-color detector 203 on the printed circuit board 201, and by setting the resin packaging colloid 205 to a lens shape with a focusing effect, it is possible to focus light on the surface of the visible light multi-color detector 203. Therefore, the visible light multi-color detector 203 is assembled using micro-machining processes such as stacking design, and its internal structure is more compact and the photosensitive area is smaller, thereby reducing the manufacturing cost of the sensor.

[0023] Furthermore, a visible light multi-color detector includes a first surface functional layer 101 and a second surface functional layer 110 .

[0024] Among them, contact layers and photoelectric conversion layers are alternately arranged between the first surface functional layer 101 and the second surface functional layer 110 and on one side of the first surface functional layer 101, and a substrate 109 is provided on one side adjacent to the second surface functional layer 110, and the substrate 109 is connected to the contact layer on the side facing away from the first surface functional layer 101.

[0025] In other embodiments, the arrangement of the contact layers and the photoelectric conversion layers arranged alternately is the same as that in this example, and the arrangement of the contact layers and the photoelectric conversion layers arranged alternately is arranged in sequence from the first surface functional layer 101 to the second surface functional layer 110: the first contact layer 102, the first photoelectric conversion layer 103, the second contact layer 104, the second photoelectric conversion layer 105, the third contact layer 106, the third photoelectric conversion layer 107, and the fourth contact layer 108, and the substrate 109 is located between the fourth contact layer 108 and the second surface functional layer 110.

[0026] According to the above structure, the upper surface of the visible light multicolor detector 203 corresponds to Figure 1 The first surface functional layer 101 in the visible light multicolor detector 203 corresponds to the side in contact with the printed circuit board 201. Figure 1 The second surface functional layer 110 is formed in the middle.

[0027] The optical signal 207 to be measured is converged by the convex lens part of the resin encapsulation colloid 205 and then irradiated to the surface of the visible light multi-color detector 203, or the corresponding Figure 1 In the first surface functional layer 101, for the convenience of explanation, in this application, the incident light signal is simplified to white light mixed with a certain proportion of red, green, and blue light and invisible near-infrared light.

[0028] The photoelectric conversion layer is a compound semiconductor material structure layer, which is made by epitaxial growth through a metal organic compound vapor deposition method. The process includes: selecting a GaAs substrate as a base plate 109, sequentially growing a gallium indium phosphide (GaInP) material with high conductivity as a fourth contact layer 108, a GaInP material with high conversion efficiency as a third photoelectric conversion layer 107, a GaInP material with low resistance as a third contact layer 106, an AlGaInP material with high conversion efficiency as a second photoelectric conversion layer 105, an AlGaInP material with low resistance as a second contact layer 104, an AlInP material with high conversion efficiency as a first photoelectric conversion layer 103, and an AlInP material with low resistance as a first contact layer 102.

[0029] Optionally, the thickness of these compound semiconductor material layers ranges from 0.01 μm to 10 μm.

[0030] in accordance with Figure 1 , based on the material structure in this embodiment, it is completed by micro-nano processing means, including manufacturing a multilayer optical film composed of silicon nitride or silicon oxide as the first surface functional layer 101 by thin film deposition means.

[0031] Furthermore, the light signal to be measured is incident from the upper surface, and the structural direction of the first surface functional layer 101 is adjusted to reduce the visible light reflected from the air interface. The first electrode 111, the second electrode 112, the third electrode 113, and the fourth electrode 114 for leading out the electrical signal are formed at designated positions by means of photolithography, etching, and metal deposition. The second surface functional layer 110 composed of a gold-tin alloy is also formed by metal deposition to reduce the difficulty of die bonding and welding of the device during the packaging process.

[0032] According to the above, its working principle is: the incident white light signal passes through the first photoelectric conversion layer 103, the second photoelectric conversion layer 105 and the third photoelectric conversion layer 107 in sequence, because the absorption edge wavelength values ​​of the three semiconductor materials AlInP, AlGaInP and GaInP constituting these three photoelectric conversion layers increase in sequence.

[0033] According to the above structure, the following effects will be achieved: the AlInP material of the first photoelectric conversion layer 103 absorbs the blue light component in the white light, converts it into an electrical signal and allows the green light, red light and infrared light components to pass through; the AlGaInP material of the second photoelectric conversion layer 105 absorbs the green light component in the incident light, converts it into an electrical signal and allows the red light and infrared light to pass through; the GaInP material of the third photoelectric conversion layer 107 absorbs the red light in the incident light, converts it into an electrical signal and allows the infrared light to pass through; the substrate 109 absorbs part of the infrared component in the incident light.

[0034] Furthermore, the first electrode 111, the second electrode 112, the third electrode 113, and the fourth electrode 114 can extract the electrical signals generated by light of different colors in the first photoelectric conversion layer 103, the second photoelectric conversion layer 105, and the third photoelectric conversion layer 107, respectively, thereby achieving the distinction of visible light of different colors.

[0035] Furthermore, it is possible to prevent the electrical signal generated by infrared light irradiation in the substrate 109 from entering the electrode, thereby preventing the infrared light from interfering with the visible light detection.

[0036] Furthermore, the above-mentioned electrode working conditions need to operate in a specific working environment, such as voltage / current, working frequency, environmental conditions, and anti-interference environment.

[0037] Based on the above, any side of the visible light multicolor detector 203 is used to receive the optical signal 207 to be measured, and the optical signal 207 to be measured is converted into multiple groups of electrical signals by the visible light multicolor detector 203 and transmitted to the integrated circuit chip 202. The specific scheme is as follows: In the following embodiments, the first surface functional layer 101 or the second surface functional layer 110 that initially receives the optical signal to be measured 207 is set as an initial surface functional layer, and the initial surface functional layer is an optical thin film layer.

[0038] Embodiment 1: See attached Figure 1 , please refer to Figure 2 , when the integrated circuit chip 202 is electrically connected to the visible light multi-color detector 203 through the metal connection wire 204: The optical signal 207 to be measured is incident from one side of the first surface functional layer 101. The first surface functional layer 101 is an optical film layer or an optical film layer is attached to the top of the first surface functional layer 101. The optical film layer is an anti-reflection and anti-reflection film.

[0039] Furthermore, the second surface functional layer 110 corresponding to the first surface functional layer 101 is a soldering layer.

[0040] Furthermore, the substrate 109 is made of semiconductor material, and the substrate 109 is connected to the photoelectric conversion layer and the contact layer through epitaxial growth. The photoelectric conversion layer and the contact layer connected to the substrate 109 through epitaxial growth are both made of semiconductor material.

[0041] The semiconductor material includes but is not limited to any one of gallium arsenide (GaAs), indium phosphide (InP), gallium phosphide (GaP), silicon (Si), germanium (Ge) or silicon carbide (SiC).

[0042] According to the above structure, the visible light multi-color detector 203 structure in this embodiment is suitable for being installed in a smart device in the form of a patch, including: a printed circuit board 201, an integrated circuit chip 202, and the visible light multi-color detector 203 in this embodiment, a metal connecting wire 204, a resin packaging colloid 205, and a solder pad 206.

[0043] Its working principle is as follows: the visible light multicolor detector 203 is used to convert the optical signal into an electrical signal; Furthermore, the integrated circuit chip 202 is used to implement but not limited to the following functions: applying the bias voltage required for operation to the visible light multi-color detector 203, acquiring and outputting the electrical signals generated by the visible light multi-color detector 203, processing the electrical signals, converting the analog electrical signals into digital signals, and communicating with external circuits.

[0044] Furthermore, the visible light multicolor detector 203 and the integrated circuit chip 202 are electrically connected through a plurality of metal connection wires 204, and the printed circuit board 201 and the pads 206 embedded therein are used to realize the electrical connection between the chip inside the sensor and the external circuit; Furthermore, the resin encapsulation colloid 205 is used to protect the chip reliability from being affected by factors such as water and oxygen in the use environment. Zinc oxide (ZnO) microparticles are added to the resin encapsulation colloid 205 to achieve absorption and shielding of ultraviolet light. A protrusion is designed above the position of the visible light multi-color detector 203 in the resin encapsulation colloid 205 to achieve the function of convex lens focusing.

[0045] Reference Figure 3 As shown, a typical spectrum test result of the visible light multi-color detector 203 of the present embodiment is shown. In the test, monochromatic light of different wavelengths is used to illuminate the visible light multi-color detector 203 of the present embodiment. At each moment, the integrated circuit chip 202 extracts the electrical signals s1, s2, s3, and s4 of the first electrode 111, the second electrode 112, the third electrode 113, and the fourth electrode 114 respectively.

[0046] The integrated circuit chip 202 calculates according to the output formula r=s1, g=(s3–s4+s2–s1) / 2, b=s4, and outputs three values ​​r, g, and b, which represent the amplitudes of the electrical signals generated by the three different color photoelectric conversion layers. The wavelength of the incident monochromatic light is used as the horizontal axis, and the channel output is used as the vertical axis amplitude. Figure 3 There are three response curves in the figure.

[0047] in accordance with Figure 3 In this embodiment, the visible light polychromatic detector 203 is not sensitive to near-infrared light with a wavelength of 780 nm or longer.

[0048] Embodiment 2: See attached Figure 4 and Figure 5 , when the integrated circuit chip 202 and the visible light multi-color detector 203 are connected using a flip chip packaging method: The light signal to be measured 207 is incident from one side of the second surface functional layer 110 , and the surface of the first surface functional layer 101 is a mirror layer.

[0049] Furthermore, the second surface functional layer 110 corresponding to the first surface functional layer 101 is an optical film layer, and the optical film layer is an anti-reflection and anti-transmission film.

[0050] Furthermore, the substrate 109 is a transparent material, and the substrate 109 is combined with a layered structure disposed on the top of the substrate 109 , and the layered structure includes a multi-layer photoelectric conversion layer, a contact layer, an electrode, and an optical film layer.

[0051] According to the above structure, the visible light multi-color detector 203 includes, from top to bottom, a first surface functional layer 101, a first contact layer 102, a first electrode 111 located on the first contact layer 102, a first photoelectric conversion layer 103, a second contact layer 104, a second electrode 112 located on the second contact layer 104, a second photoelectric conversion layer 105, a third contact layer 106, a third electrode 113 located on the third contact layer 106, a third photoelectric conversion layer 107, a fourth contact layer 108, a fourth electrode 114 located on the fourth contact layer 108, a substrate 109, and a second surface functional layer 110.

[0052] Similar to the first embodiment, the main structure of the visible light multi-color detector 203 is also made of compound semiconductor materials, and is produced by epitaxial growth through a metal organic compound vapor deposition method.

[0053] The manufacturing method includes: selecting a GaAs substrate, and sequentially growing thereon an AlInP material with high conductivity as a fourth contact layer 108, an AlInP material with high conversion efficiency as a third photoelectric conversion layer 107, an AlGaInP material with low resistance as a third contact layer 106, an AlGaInP material with high conversion efficiency as a second photoelectric conversion layer 105, a GaInP material with low resistance as a second contact layer 104, a GaInP material with high conversion efficiency as a first photoelectric conversion layer 103, and a GaInP material with low resistance as a first contact layer 102.

[0054] Depending on the application scenario, optionally, the compound semiconductor material layer has a thickness ranging from 0.01 μm to 10 μm.

[0055] Reference Figure 4 As shown, based on the material structure in this embodiment, it is completed by micro-nano processing means, including the following steps, using photolithography, etching and metal deposition and other means to form a first surface functional layer 101 at a specified position, and to form a first electrode 111, a second electrode 112, a third electrode 113, and a fourth electrode 114.

[0056] Further, the fourth contact layer 108 to the first surface functional layer 101 and the portion therebetween are transferred to and bonded to the PET substrate 109 .

[0057] Its working principle is as follows: the light signal 207 to be measured is incident from the second surface functional layer 110, and the second surface functional layer 110 is set as an anti-reflection film to reduce the reflection of visible light at the interface with the air; the first surface functional layer 101 is set as a mirror surface to reflect the light and pass it through the first photoelectric conversion layer 103, the second photoelectric conversion layer 105, the third photoelectric conversion layer 107 in sequence, and then passes through the substrate 109 again, thereby improving the overall conversion efficiency of the visible light multi-color detector 203.

[0058] Further references Figure 5 The visible light multi-color detector 203 is suitable for being installed in a smart device in the form of a patch, and includes: a printed circuit board 201 and an integrated circuit chip 202, as well as the visible light multi-color detector 203, metal connecting wires 204, resin packaging colloid 205, and solder pads 206 in this embodiment.

[0059] In this example, the visible light multi-color detector 203 is different from the first embodiment in that it is installed on the upper surface of the integrated circuit IC in the form of a flip-chip package, and the mechanical and electrical connection between the two is achieved by bonding metal 208. The flip-chip package of the visible light multi-color detector 203 can reduce the area of ​​the sensor.

[0060] In this embodiment, Figure 5 The upper surface of the visible light multicolor detector 203 corresponds to Figure 4 The second surface functional layer 110 in the visible light multicolor detector 203 contacts the integrated circuit chip 202 on one side thereof. Figure 4 The first surface functional layer 101 in.

[0061] Furthermore, the first electrode 111, the second electrode 112, the third electrode 113, and the fourth electrode 114 are formed by Figure 5 The bonding metal 208 in the integrated circuit chip 202 establishes mechanical and electrical connection. The optical signal 207 to be measured is converged by the convex lens part of the resin encapsulation colloid 205 and irradiated to the surface of the visible light multi-color detector 203, that is, Figure 4 The second surface functional layer 110 in.

[0062] Similar to the first embodiment, after the incident light passes through the second surface functional layer 110 and the transparent substrate 109, it is absorbed, converted, and filtered by the third photoelectric conversion layer 107, the second photoelectric conversion layer 105, and the first photoelectric conversion layer 103 in sequence. By setting specific working conditions, the first electrode 111, the second electrode 112, the third electrode 113, and the fourth electrode 114 can extract the electrical signals generated by different colors of light in different photoelectric conversion layers, thereby realizing the distinction between visible lights of different colors.

[0063] Since the semiconductor materials in the visible light multi-color detector 203 of this example do not absorb infrared light, the infrared part of the incident light signal is reflected by the first surface functional layer 101 and leaves the visible light multi-color detector 203 from the side of the second surface functional layer 110, thereby avoiding the interference of infrared light on visible light detection.

[0064] A visible light multicolor detection method comprises the following steps: S1: Acquire an optical signal and pass the optical signal through either side of the compound semiconductor material structure; S2: converting the optical signal into an electrical signal, and the absorption edge wavelength of the photoelectric conversion layer increases successively; S3: Detect multiple colors of light separately based on the absorption of different wavelengths.

[0065] The above is only a preferred embodiment of the present application. It should be noted that, for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application, and these improvements and modifications should also be regarded as the protection scope of the present application. The structures, devices and operating methods not specifically described and explained in this application shall be implemented according to the conventional means in the field unless otherwise specified and limited.

Claims

1. A light sensor, characterized in that: include: Printed circuit board (201); The printed circuit board (201) is provided with at least one integrated circuit chip (202) and at least one visible light multi-color detector (203) electrically connected to the integrated circuit chip (202); Solder pads (206) are provided on the top and bottom of the printed circuit board (201); the solder pad (206) located on one side of the top of the printed circuit board (201) is electrically connected to the integrated circuit chip (202) via a metal connecting wire (204); as well as A resin encapsulation colloid (205) covering the top of the printed circuit board (201) to protect the integrated circuit chip (202), the visible light multi-color detector (203) and the metal connecting wire (204); Wherein, any side of the visible light multi-color detector (203) is used to receive the light signal to be measured (207), and the light signal to be measured (207) is converted into multiple groups of electrical signals through the visible light multi-color detector (203) and transmitted to the integrated circuit chip (202).

2. A visible light multicolor detector, characterized in that: The visible light multicolor detector (203) comprises: A first surface functional layer (101) and a second surface functional layer (110); A contact layer and a photoelectric conversion layer are alternately arranged between the first surface functional layer (101) and the second surface functional layer (110), and located on one side of the first surface functional layer (101); A substrate (109) is provided on a side adjacent to the second surface functional layer (110), and the substrate (109) is connected to a contact layer on a side facing away from the first surface functional layer (101).

3. A visible light multicolor detector according to claim 2, characterized in that: The first surface functional layer (101) or the second surface functional layer (110) that initially receives the optical signal to be measured (207) is set as an initial surface functional layer, and the initial surface functional layer is an optical thin film layer.

4. A visible light multicolor detector according to claim 3, characterized in that: The optical film layer is an anti-reflection and anti-transmission film.

5. A visible light multicolor detector according to claim 3 or 4, characterized in that: The light signal to be measured (207) is incident from one side of the first surface functional layer (101), and the second surface functional layer (110) corresponding to the same group as the first surface functional layer (101) is a soldering layer.

6. The visible light multicolor detector according to claim 5, characterized in that: The substrate (109) is a semiconductor material, and the substrate (109) is connected to the photoelectric conversion layer and the contact layer through epitaxial growth.

7. The visible light multicolor detector according to claim 3, characterized in that: The light signal to be measured (207) is incident from the second surface functional layer (110), and the surface of the first surface functional layer (101) corresponding to the same group as the second surface functional layer (110) is a mirror layer.

8. The visible light multicolor detector according to claim 7, characterized in that: The substrate (109) is a transparent material, and the substrate (109) is combined with a layered structure arranged on the top of the substrate (109), wherein the layered structure comprises a multi-layer photoelectric conversion layer, a contact layer, an electrode, and an optical thin film layer.

9. A visible light multicolor detector according to claim 6 or 8, characterized in that: The photoelectric conversion layer is a compound semiconductor material structure layer.

10. A visible light multicolor detection method, characterized in that: The steps include: Acquiring an optical signal and passing the optical signal through either side of the compound semiconductor material structure; The optical signal is converted into an electrical signal, and the absorption limit wavelength of the photoelectric conversion layer is increased in sequence, so that the polychromatic light can be detected separately according to the absorption of different wavelengths.

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