Compounds and methods for extreme ultraviolet lithography
By developing cyclopentadiene tin (II) complex as a precursor for EUV lithography, the material performance and process problems in the prior art have been solved, the efficiency and pattern quality of EUV lithography have been improved, and it is suitable for EUV hard mask applications and other fields.
Patent Information
- Application Number
- CN202380054164.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2022-07-01
- Filing Date
- 2023-06-29
- Publication Date
- 2025-03-04
AI Technical Summary
The existing extreme ultraviolet (EUV) lithography technology has material performance and process problems when preparing high-quality patterns, which affects the efficiency and accuracy of lithography.
A cyclopentadiene tin (II) complex was developed as a precursor for EUV lithography, which was used in EUV hard mask applications through atomic layer deposition (ALD) or plasma chemical vapor deposition (CVD) processes. The complex is prepared by contacting [Sn(N(R2)2)2]2 with Cp2Sn or CpH to form a compound suitable for EUV lithography.
As a precursor for EUV lithography, the cyclopentadiene tin (II) complex improves the quality of the pattern and the efficiency of the lithography process. It is suitable for EUV hard mask applications and can be used in other fields such as polyvinyl chloride (PVC) stabilizers and catalysts.
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Figure CN119562956A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of compounds and methods for extreme ultraviolet (EUV) lithography.
[0002] Priority declaration
[0003] The present disclosure claims priority to U.S. Provisional Patent Application No. 63 / 357,771, entitled “COMPOUNDS AND PROCESSES FOR EXTREME ULTRAVIOLET LITHOGRAPHY,” filed on July 1, 2023, which is incorporated herein by reference. Background Art
[0004] EUV lithography is an optical lithography technique that uses a range of EUV wavelengths to create patterns by exposing a reflective photomask to UV light that is reflected off a substrate covered by a photoresist. Summary of the invention
[0005] The present disclosure includes the preparation of mixed ligand compounds, such as cyclopentadienyl tin (II) complexes. The compounds of the present disclosure can be used as precursors for EUV lithography, for example, atomic layer deposition (ALD) precursors or plasma chemical vapor deposition (CVD) precursors. For example, the compounds of the present disclosure can be used in EUV hard mask applications. The tin compounds can also be used in other applications (e.g., polyvinyl chloride (PVC) stabilizers, biocides, precursors for tin (IV) oxide coatings, and catalysts for organic conversions).
[0006] In some embodiments, the present disclosure comprises a cyclopentadienyltin(II) compound of formula (I) comprising:
[0007]
[0008] Among them, each R 2 are independently hydrogen, C1-C4 or halogen-containing C1-C4,
[0009] in
[0010]
[0011] Where R 3 To R 7 It is hydrogen or C1-C4.
[0012] In some embodiments, the present disclosure comprises wherein each R 2 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0013] In some embodiments, the present disclosure comprises wherein each R 2 It is methyl.
[0014] In some embodiments, the present disclosure comprises wherein each R 2 It is a C1-C4 alkyl group.
[0015] In some embodiments, the present disclosure encompasses wherein C1-C4 is branched or unbranched.
[0016] In some embodiments, the present disclosure encompasses wherein C1-C4 are substituted or unsubstituted.
[0017] In some embodiments, the present disclosure comprises wherein each R 3 To R 7 For hydrogen.
[0018] In some embodiments, the present disclosure comprises wherein each R 2 is hydrogen and each R 3 To R 7 For hydrogen.
[0019] In some embodiments, the present disclosure comprises a method of forming a cyclopentadienyltin(II) compound of formula (I):
[0020]
[0021] Among them, each R 2 are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group,
[0022] in
[0023]
[0024] Where R 3 To R 7 is hydrogen or C1-C4, and
[0025] The method comprises: making [Sn(N(R 2 )2)2]2 is in contact with Cp2Sn or CpH.
[0026] In some embodiments, the present disclosure includes wherein prior to the contacting step, [Sn(N(R 2 )2)2]2 is dissolved in tetrahydrofuran.
[0027] In some embodiments, the present disclosure comprises wherein R 2 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0028] In some embodiments, the present disclosure encompasses wherein prior to the contacting step, the Cp2Sn or CpH is dissolved in tetrahydrofuran.
[0029] In some embodiments, the present disclosure comprises a cyclopentadienyltin(II) compound of formula (II):
[0030]
[0031] Among them, each R 1 are independently hydrogen, C1-C4 or halogen-containing C1-C4, and
[0032] in
[0033] and
[0034] Where R 3 To R 7 It is hydrogen or C1-C4.
[0035] In some embodiments, the present disclosure comprises wherein each R 1 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0036] In some embodiments, the present disclosure comprises wherein each R 1 It is methyl.
[0037] In some embodiments, the present disclosure comprises wherein each R 1 It is a C1-C4 alkyl group.
[0038] In some embodiments, the present disclosure encompasses wherein C1-C4 is branched or unbranched.
[0039] In some embodiments, the present disclosure encompasses wherein C1-C4 are substituted or unsubstituted.
[0040] In some embodiments, the present disclosure comprises wherein each R 3 To R 7 For hydrogen.
[0041] In some embodiments, the present disclosure comprises wherein each R 1 is hydrogen and each R 3 To R 7 For hydrogen.
[0042] In some embodiments, the present disclosure comprises a method of forming a cyclopentadienyltin (II) compound of formula (II):
[0043]
[0044] Among them, each R 1are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group,
[0045] in
[0046]
[0047] Where R 3 To R 7 is hydrogen or C1-C4, and wherein the method comprises: making [Sn(O(R 1 ))2]2 is in contact with Cp2Sn.
[0048] In some embodiments, the present disclosure comprises wherein prior to the contacting step, [Sn(O(R 1 ))2]2 was dissolved in tetrahydrofuran.
[0049] In some embodiments, the present disclosure comprises wherein R 1 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0050] In some embodiments, the present disclosure encompasses wherein prior to the contacting step, the Cp2Sn is dissolved in tetrahydrofuran. BRIEF DESCRIPTION OF THE DRAWINGS
[0051] By way of example only, some embodiments of the present disclosure are described herein with reference to the accompanying drawings. With specific reference now to the drawings in detail, it should be emphasized that the embodiments are shown by way of example and for the purpose of illustrative discussion of the embodiments of the present disclosure. In this regard, the description in conjunction with the drawings makes it apparent to those skilled in the art how to practice the embodiments of the present disclosure.
[0052] Figure 1 A non-limiting example of a method 100 for synthesizing tin(II) cyclopentadienylamide described herein is depicted.
[0053] Figure 2 A non-limiting example of a method 200 for synthesizing the cyclopentadienyl tin(II) oxides described herein is depicted.
[0054] Figure 3 A non-limiting example of a method 300 for synthesizing cyclopentadienyl tin(II) amide using Cp2Sn described herein is depicted.
[0055] Figure 4 Depicted is the solid-state structure of [CpSn(N(CH3)2)]2 determined by X-ray crystallography.
[0056] Figure 5 A non-limiting example of a method 600 for synthesizing cyclopentadienyl tin(II) amide using the CpH described herein is depicted. DETAILED DESCRIPTION
[0057] Among those benefits and improvements disclosed, other objects and advantages of the present disclosure will become apparent from the following description in conjunction with the accompanying drawings. Detailed embodiments of the present disclosure are disclosed herein; however, it should be understood that the disclosed embodiments are merely illustrative of the present disclosure that can be embodied in various forms. In addition, each example given with respect to various embodiments of the present disclosure is intended to be illustrative rather than restrictive.
[0058] All prior patents and publications referenced herein are incorporated by reference in their entirety.
[0059] Throughout this specification and the claims, unless the context clearly dictates otherwise, the following terms have the meanings explicitly associated herein. As used herein, the phrases "in one embodiment," "in an embodiment," and "in some embodiments" do not necessarily refer to the same embodiment, but they may refer to the same embodiment. In addition, as used herein, "in another embodiment" and "in some other embodiments" do not necessarily refer to different embodiments, but they may refer to different embodiments. All embodiments of the present disclosure may be combined without departing from the scope or spirit of the present disclosure.
[0060] As used herein, the term "based on" is not exclusive and allows for being based on additional factors not described, unless the context clearly dictates otherwise. In addition, throughout this specification, the meanings of "a," "an," and "the" include plural references. The meaning of "in" includes "in" and "on."
[0061] The present disclosure relates to compounds of mixed ligand compounds, including their preparation. The mixed ligand compounds include cyclopentadienyl tin (II) complexes, which include cyclopentadienyl amides and cyclopentadienyl alkoxides. The compounds of the present disclosure can be used as atomic layer deposition (ALD) precursors for EUV lithography. For example, the compounds of the present disclosure can be used in EUV hard mask applications. Tin compounds can also be used in other applications (e.g., polyvinyl chloride (PVC) stabilizers, biocides, precursors for tin (IV) oxide coatings, and catalysts for organic conversions).
[0062] Figure 1 A non-limiting example of a method 100 for synthesizing tin(II) cyclopentadienylamide described herein is depicted. In some embodiments, the present disclosure comprises making [Sn(N(R 2)2)2]2 is contacted with Cp2Sn 110 or CpH 120. In some embodiments, method 100 comprises, prior to the contacting step, 2 )2)2]2 is dissolved in tetrahydrofuran (THF). In some embodiments, method 100 comprises dissolving Cp2Sn or CpH in tetrahydrofuran (THF) before the contacting step.
[0063] In some embodiments, using Cp2Sn 110 in method 100 may include converting [Sn(N(R 2 )2)2]2 is loaded into a container (e.g., a vial) and dissolved in tetrahydrofuran (THF). In a separate container, Cp2Sn can be added and dissolved in tetrahydrofuran (THF). [Sn(N(R 2 )2)2]2 dissolved in THF solution is added to the Cp2Sn dissolved in THF solution. 2 )2)2]2, Cp2Sn and tetrahydrofuran (THF) combined solution and continue for a period of time. The combined solution can be stirred and continued for an extended period of time, for example, between one and twelve hours. For example, the combined solution can be stirred and continued for longer than one hour, longer than three hours, longer than six hours, longer than nine hours, shorter than twelve hours, shorter than nine hours, shorter than six hours or shorter than three hours. After stirring the combined solution, the combined solution can then be dried. In some examples, the combined solution can be dried under reduced pressure to obtain a solid substance. The reduced pressure can be selected from, for example, a reduced pressure range of 100 millitorr to 760 torr (atm). For example, the reduced pressure can be greater than 100 millitorr, greater than 1 torr, greater than 10 torr, greater than 100 torr, greater than 300 torr, greater than 500 torr, greater than 700 torr, less than 760 torr, less than 700 torr, less than 500 torr, less than 300 torr, less than 100 torr, less than 10 torr or less than 1 torr. In some examples, the stirred solution can be dried under dynamic vacuum, including at reduced pressure values described herein. X-ray quality crystals can be grown by slow evaporation of a solution such as an NMR solvent, including concentrated benzene (C6D6) solution, tetrahydrofuran (THF), diethyl ether (Et2O), or toluene (PhMe).
[0064] In some embodiments, using CpH 120 in method 100 may include diluting cyclopentadiene with tetrahydrofuran (THF). The solution of cyclopentadiene and tetrahydrofuran (THF) may then be added to the THF and [Sn(N(R 2 )2)2]2 in a stirred solution. 2)2)2]2, CpH and tetrahydrofuran (THF) combined solution for a period of time. The combined solution can be stirred for an extended period of time, for example, between one and twelve hours. For example, the combined solution can be stirred for longer than one hour, longer than three hours, longer than six hours, longer than nine hours, shorter than twelve hours, shorter than nine hours, shorter than six hours or shorter than three hours. After stirring the combined solution, the combined solution can then be dried. In some examples, the stirred solution can be dried under reduced pressure to obtain a solid substance. For example, the reduced pressure can be greater than 100 mTorr, greater than 1 Torr, greater than 10 Torr, greater than 100 Torr, greater than 300 Torr, greater than 500 Torr, greater than 700 Torr, less than 760 Torr, less than 700 Torr, less than 500 Torr, less than 300 Torr, less than 100 Torr, less than 10 Torr or less than 1 Torr. In some examples, the stirred solution can be dried under dynamic vacuum, including under the reduced pressure values described herein.
[0065] In some embodiments, Cp2Sn 110 or CpH 120 used in the method 100 of the present disclosure comprises a cyclopentadienyltin(II) compound of formula (I):
[0066]
[0067] In some embodiments, each R 2 are independently hydrogen or C1-C4.
[0068] In some embodiments, each R 2 R is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl. 2 In some embodiments, each R 2 It is a C1-C4 alkyl group.
[0069] In some embodiments, cyclopentadiene (Cp) has formula (1):
[0070]
[0071] In some embodiments, R 3 To R 7 is hydrogen or C1-C4. In some embodiments, each R 3 To R 7 R is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl. 2 It is methyl.
[0072] In some embodiments, C1-C4 is branched or unbranched. In some embodiments, C1-C4 is substituted or unsubstituted.
[0073] In some embodiments, each R2 is methyl and each R 3 To R 7 In some embodiments, each R 2 is hydrogen and each R 3 To R 7 For hydrogen.
[0074] In some embodiments, the present disclosure comprises forming a cyclopentadienyltin (II) compound of formula (I). In some embodiments, each R 2 are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group.
[0075] In some embodiments, cyclopentadiene (Cp) has formula (1). In some embodiments, R 3 To R 7 is hydrogen or C1-C4. In some embodiments, method 100 comprises: 2 )2)2]2 is contacted with Cp2Sn or CpH to form a cyclopentadienyltin(II) compound of formula (I). In some embodiments, method 100 comprises, before the contacting step, 2 )2)2]2 is dissolved in tetrahydrofuran (THF). In some embodiments, method 100 comprises dissolving Cp2Sn or CpH in tetrahydrofuran (THF) before the contacting step.
[0076] Figure 2 A non-limiting example of a method 200 for synthesizing cyclopentadienyl tin(II) oxide described herein is depicted. In some embodiments, the present disclosure comprises making [Sn(O(R 1 ))2]2 is contacted with Cp2Sn. In some embodiments, method 200 comprises, before the contacting step, contacting [Sn(O(R 1 In some embodiments, the method 200 comprises, before the contacting step, dissolving Cp2Sn in tetrahydrofuran (THF).
[0077] In some embodiments, the Cp2Sn used in the method 200 of the present disclosure comprises a cyclopentadienyltin(II) compound of formula (II):
[0078]
[0079] In some embodiments, each R 1 are independently hydrogen, C1-C4 or halogen-containing C1-C4.
[0080] In some embodiments, each R 1R is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl. 1 In some embodiments, each R 1 is a C1-C4 alkyl group. 1 is a C1-C4 alkyl group containing at least one halogen group (e.g., fluorine (F), chlorine (Cl), bromine (Br) or iodine (I)). 1 It may be -OCH2CF3 (trifluoroethanolate).
[0081] In some embodiments, cyclopentadiene (Cp) has formula (1):
[0082]
[0083] In some embodiments, R 3 To R 7 is hydrogen or C1-C4. In some embodiments, each R 3 To R 7 R is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl. 1 It is methyl.
[0084] In some embodiments, C1-C4 is branched or unbranched. In some embodiments, C1-C4 is substituted or unsubstituted.
[0085] In some embodiments, each R 1 is methyl and each R 3 To R 7 is hydrogen. In some embodiments, each R 1 is hydrogen and each R 3 To R 7 For hydrogen.
[0086] In some embodiments, the present disclosure comprises forming a cyclopentadienyltin (II) compound of formula (II). In some embodiments, each R 1 are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group.
[0087] In some embodiments, cyclopentadiene (Cp) has formula (1). In some embodiments, R 3 To R 7 is hydrogen or C1-C4. In some embodiments, method 200 comprises: 1 ))2]2 is contacted with Cp2Sn to form a cyclopentadienyltin (II) compound of formula (II). In some embodiments, method 200 comprises, before the contacting step, 1In some embodiments, the method 200 comprises, before the contacting step, dissolving Cp2Sn in tetrahydrofuran (THF).
[0088] Examples
[0089] Example 1
[0090] Figure 3 A non-limiting example of a method 300 for synthesizing cyclopentadienyl tin(II) amide using Cp2Sn described herein is depicted.
[0091] [Sn(N(CH3)2)2]2 (1.0 g, 3.98 mmol) was loaded into an amber 40 mL vial and dissolved in tetrahydrofuran (10 mL). Cp2Sn was loaded into a separate amber 40 mL vial equipped with a magnetic stir bar and dissolved in THF (10 mL). The [Sn(N(CH3)2)2]2 solution was added to the Cp2Sn solution over a period of five minutes under stirring. The resulting light yellow solution was stirred overnight at room temperature. The next day, the light yellow solution was dried under reduced pressure to give [CpSn(N(CH3)2)]2 (mass: 1.63 g, yield: 89.5%) as an off-white / yellow solid. X-ray quality crystals were grown by slow evaporation of concentrated C6D6 solution. 1 H-NMR (400MHz, d8-THF, 298K): 2.65 (s, 6H); 2.73 (s, 6H); 6.12 (s, 10H) ppm; 13 C{ 1 H}-NMR (100MHz, d8-THF, 298K): 44.06ppm; 119 Sn{ 1 H}-NMR (149MHz, d8-THF, 298K): -287.3, -306.12ppm.
[0092] Figure 4 Depicts the solid-state structure of [CpSn(N(CH3)2)]2 as determined by X-ray crystallography.
[0093] Table 1 depicts the crystal data and structure optimization of [CpSn(N(CH3)2)]2.
[0094]
[0095]
[0096] Example 2
[0097] Figure 5A non-limiting example of a method 600 for synthesizing cyclopentadienyl tin(II) amide using the CpH described herein is depicted.
[0098] Cyclopentadiene (0.158 g, 2.40 mmol) was diluted with 3 mL of tetrahydrofuran and added dropwise over the course of five minutes to a stirred solution of [Sn(N(CH3)2)2]2 (0.500 g, 1.20 mmol) in 3 mL of THF and the resulting light yellow solution was stirred overnight. The next day, the volatiles were removed under reduced pressure to give [CpSn(N(CH3)2)]2 as a light yellow solid. The product was collected on a d8-THF solution of 1 H-, 13 C- and 119 Sn-NMR is consistent with that obtained by combining Cp2Sn and [Sn(N(CH3)2)2]2.
[0099] aspect
[0100] Various aspects are described below. It should be understood that any one or more features described in the following aspects may be combined with any one or more other aspects.
[0101] Aspect 1. A cyclopentadienyltin (II) compound of formula (I), comprising:
[0102]
[0103] Among them, each R 2 are independently hydrogen, C1-C4 or halogen-containing C1-C4,
[0104] in
[0105] and
[0106] Where R 3 To R 7 It is hydrogen or C1-C4.
[0107] Aspect 2. The compound according to aspect 1, wherein each R 2 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0108] Aspect 3. The compound according to aspect 1, wherein each R 2 It is methyl.
[0109] Aspect 4. The compound according to aspect 1, wherein each R 2 It is a C1-C4 alkyl group.
[0110] Aspect 5. The compound according to any one of the preceding aspects, wherein the C1-C4 is a branched chain or an unbranched chain.
[0111] Aspect 6. The compound according to any one of the preceding aspects, wherein said C1-C4 is substituted or unsubstituted.
[0112] Aspect 7. A compound according to any one of the preceding aspects, wherein each R 3 To R 7 For hydrogen.
[0113] Aspect 8. The compound according to aspect 1, wherein each R 2 is hydrogen and each R 3 To R 7 For hydrogen.
[0114] Aspect 9. A method for forming a cyclopentadienyltin (II) compound of formula (I):
[0115]
[0116] Among them, each R 2 are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group,
[0117] in
[0118]
[0119] Where R 3 To R 7 is hydrogen or C1-C4, and
[0120] The method comprises: making [Sn(N(R 2 )2)2]2 is in contact with Cp2Sn or CpH.
[0121] Aspect 10. The method according to aspect 9, wherein before the contacting step, [Sn(N(R 2 )2)2]2 is dissolved in tetrahydrofuran.
[0122] Aspect 11. The method according to aspect 9 or aspect 10, wherein R 2 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0123] Aspect 12. The method according to any one of aspects 9 to 11, wherein prior to the contacting step, Cp2Sn or CpH is dissolved in tetrahydrofuran.
[0124] Aspect 13. A cyclopentadienyltin (II) compound of formula (II):
[0125]
[0126] Among them, each R 1 are independently hydrogen, C1-C4 or halogen-containing C1-C4, and
[0127] in
[0128] and
[0129] Where R 3 To R 7 It is hydrogen or C1-C4.
[0130] Aspect 14. The compound according to aspect 13, wherein each R 1 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0131] Aspect 15. The compound according to aspect 13, wherein each R 1 It is methyl.
[0132] Aspect 16. The compound according to aspect 13, wherein each R 1 It is a C1-C4 alkyl group.
[0133] Aspect 17. The compound according to any one of the preceding aspects, wherein the C1-C4 is a branched chain or an unbranched chain.
[0134] Aspect 18. The compound according to any of the preceding aspects, wherein said C1-C4 is substituted or unsubstituted.
[0135] Aspect 19. A compound according to any one of the preceding aspects, wherein each R 3 To R 7 For hydrogen.
[0136] Aspect 20. The compound according to aspect 13, wherein each R 1 is hydrogen and each R 3 To R 7 For hydrogen.
[0137] Aspect 21. A method of forming a cyclopentadienyltin (II) compound of formula (II):
[0138]
[0139] Among them, each R 1 are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group,
[0140] in
[0141]
[0142] Where R 3 To R 7 is hydrogen or C1-C4, and wherein the method comprises: making [Sn(O(R 1 ))2]2 is in contact with Cp2Sn.
[0143] Aspect 22. The method according to aspect 21, wherein before the contacting step, [Sn(O(R 1 ))2]2 was dissolved in tetrahydrofuran.
[0144] Aspect 23. The method according to aspect 21 or aspect 22, wherein each R 1 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
[0145] Aspect 24. The method according to any one of aspects 21 to 23, wherein the Cp2Sn is dissolved in tetrahydrofuran prior to the contacting step.
[0146] It should be understood that changes may be made in detail, especially in the construction materials employed, and the shape, size, and arrangement of parts without departing from the scope of the present disclosure. The specification and described embodiments are examples, with the true scope and spirit of the present disclosure being indicated by the appended claims.
Claims
1. A cyclopentadienyltin (II) compound of formula (I), comprising: Among them, each R 2 are independently hydrogen, C1-C4 or halogen-containing C1-C4, in and Where R 3 To R 7 It is hydrogen or C1-C4.
2. The compound according to claim 1, wherein each R 2 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
3. The compound according to claim 1, wherein each R 2 It is methyl.
4. The compound according to claim 1, wherein each R 2 It is a C1-C4 alkyl group. The compound according to claim 1 , wherein the C1-C4 is branched or unbranched. The compound according to claim 1 , wherein the C1-C4 is substituted or unsubstituted.
7. The compound according to claim 1, wherein each R 3 To R 7 For hydrogen.
8. The compound according to claim 1, wherein each R 2 is hydrogen and each R 3 To R 7 For hydrogen.
9. A method for forming a cyclopentadienyltin(II) compound of formula (I), Among them, each R 2 are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group, in Where R 3 To R 7 is hydrogen or C1-C4, and The method comprises: [Sn(N(R 2 )2)2]2 is in contact with Cp2Sn or CpH.
10. The method according to claim 9, wherein before the contacting step, [Sn(N(R 2 )2)2]2 is dissolved in tetrahydrofuran.
11. The method according to claim 10, wherein R 2 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
12. The method of claim 9, wherein prior to the contacting step, Cp2Sn or CpH is dissolved in tetrahydrofuran.
13. A cyclopentadienyltin (II) compound of formula (II), Among them, each R 1 are independently hydrogen, C1-C4 or halogen-containing C1-C4, and in and Where R 3 To R 7 It is hydrogen or C1-C4.
14. The compound according to claim 13, wherein each R 1 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
15. The compound according to claim 13, wherein each R 1 It is methyl.
16. The compound according to claim 13, wherein each R 1 C 1- C4 alkyl.
17. The compound of claim 13, wherein the C1-C4 is branched or unbranched.
18. The compound of claim 13, wherein the C1-C4 is substituted or unsubstituted.
19. The compound according to claim 13, wherein each R 3 To R 7 For hydrogen.
20. The compound according to claim 13, wherein each R 1 is hydrogen and each R 3 To R 7 For hydrogen.
21. A method of forming a cyclopentadienyltin(II) compound of formula (II), Among them, each R 1 are independently hydrogen, C1-C4 or a halogen-containing C1-C4 group, in Where R 3 To R 7 is hydrogen or C1-C4, and wherein the method comprises: [Sn(O(R 1 ))2]2 is in contact with Cp2Sn.
22. The method of claim 21, wherein prior to the contacting step, [Sn(O(R 1 ))2]2 was dissolved in tetrahydrofuran.
23. The method according to claim 22, wherein R 1 is independently methyl, ethyl, propyl, isopropyl, n-butyl, isobutyl, tert-butyl or sec-butyl.
24. The method of claim 21, wherein prior to the contacting step, Cp2Sn is dissolved in tetrahydrofuran.