DBD reactor, resonant frequency self-adaptive plasma ammonia system and control method

Abstract

The embodiment of the invention discloses a DBD reactor, a resonant frequency self-adaptive plasma ammonia system and a control method. A high-voltage terminal in the DBD reactor is arranged in the axial direction; the circumferential steel wire brush support body is sleeved outside the high-voltage terminal to support the inner electrode; the quartz silicon medium tube is arranged in the inner electrode and tightly attached to the inner wall of the inner electrode, an air gap layer is formed between the double tube walls of the quartz silicon medium tube, an air inlet and an air outlet are formed, the inner electrode is sleeved with the inner tube wall, and the inner electrode is tightly attached to the inner tube wall; and the plurality of net-shaped outer electrodes are arranged at equal intervals along the axial direction, are positioned on the air gap layer, and are tightly attached to the outer-layer tube wall of the quartz silicon medium tube. In the scheme, the outer electrodes of the DBD reactor are distributed at equal intervals, so that the overall capacitance value of the outer electrodes is reduced, the over-high current peak value is avoided, the edge effect of the electrodes is enhanced, and micro discharge and discharge uniformity are promoted; the external electrode is arranged inside, the problems of extra power loss and the like caused by exposure of the external electrode are avoided, and efficient utilization of energy is ensured.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma synthesis of ammonia, and in particular to a DBD reactor, a resonance frequency adaptive plasma ammonia production system and a control method. Background Art

[0002] In recent years, plasma technology has shown great potential in the field of ammonia synthesis. Among them, dielectric barrier discharge (DBD) has received widespread attention in the research of plasma ammonia synthesis due to its advantages such as simple structure, convenient operation and uniform discharge. The key link in its ammonia synthesis is to perform AC-DC inversion conversion on the industrial frequency power supply through a specific high-frequency power supply constructed by an analog-to-digital conversion circuit to generate a power supply signal with the optimal operating frequency required by the DBD discharge reactor, thereby ensuring that the discharge system can efficiently and stably synthesize ammonia. However, the resonant frequency of the existing DBD discharge system will be affected by multiple factors such as power supply parameters, electrode structure, gas composition and pressure, resulting in a decrease in discharge efficiency and energy utilization, thereby affecting the synthesis efficiency and yield of ammonia. Therefore, resonant frequency adaptive technology is needed to monitor and control the DBD discharge system in real time to ensure that the power supply operating frequency is always consistent with the resonant frequency of the DBD discharge chamber.

[0003] The traditional resonant frequency adaptive technology of DBD plasma discharge system includes: the first is the resonant frequency adaptive control method based on the phase-locked loop phase-shift full-bridge circuit, the second is the detection feedback method based on the voltage at both ends of the discharge chamber, and the third is the difference adjustment method based on the reference of the ideal DBD discharge plasma model. The first method has a complex hardware structure and a high failure rate, the second method has expensive measuring instruments and has high voltage risks, and the third method is affected by various complex factors in the actual system, resulting in large frequency adjustment errors.

[0004] In addition, the outer electrodes of conventional coaxial DBD reactors are usually exposed, which makes it very easy to have unnecessary energy interactions with the surrounding environment, such as radiating energy outward or reacting with impurities in the air, resulting in that all energy cannot be effectively used for the ammonia synthesis reaction, causing additional power loss problems and reducing energy utilization efficiency. In practical applications, the design structure of a single outer electrode has a poor micro-discharge effect, resulting in insufficient discharge uniformity, which in turn affects the overall reaction efficiency. Summary of the invention

[0005] Based on this, it is necessary to propose a DBD reactor, a resonant frequency adaptive plasma ammonia production system and a control method to address the above problems.

[0006] To achieve the above-mentioned purpose, the first aspect of the present application provides a DBD reactor, comprising a high-voltage terminal, a circumferential wire brush support, an inner electrode, a quartz silicon dielectric tube, and a mesh outer electrode;

[0007] The high voltage terminal is arranged along the axial direction;

[0008] The circumferential wire brush support body is sleeved on the outside of the high-voltage terminal and is used to support the inner electrode;

[0009] The inner wall of the inner electrode is attached to the outside of the wire brush support;

[0010] The quartz silicon dielectric tube comprises an inner tube wall and an outer tube wall, an air gap layer is formed between the inner tube wall and the outer tube wall, one end of the quartz silicon dielectric tube is also provided with an air inlet for introducing reaction gas, and the other end is provided with an air outlet for removing reaction gas products, the inner tube wall of the quartz silicon dielectric tube is sleeved on the outside of the inner electrode, and the inner electrode is tightly fitted with the inner tube wall of the quartz silicon dielectric tube;

[0011] A plurality of mesh-shaped outer electrodes are provided and arranged at equal intervals along the axial direction. The mesh-shaped outer electrodes are located in the air gap layer and are closely attached to the outer tube wall of the quartz silicon dielectric tube.

[0012] To achieve the above-mentioned purpose, the second aspect of the present application provides a resonant frequency adaptive plasma ammonia production system, the system comprising: a DBD reactor, an AC power supply, a voltage regulating module, a rectifier circuit, and a PID control unit;

[0013] The AC power supply is connected to the input end of the voltage regulating module and is used to provide AC power to the voltage regulating module;

[0014] The output end of the voltage regulating module is connected to the input end of the rectifier circuit, and is used to adjust the output amplitude of the AC power supply;

[0015] The output end of the rectifier circuit is connected to the input end of the high-frequency inverter, and is used to convert the AC voltage into a DC voltage and transmit it to the high-frequency inverter;

[0016] The output end of the high-frequency inverter is connected to a boost module, which is used to convert a DC voltage into a high-frequency AC voltage according to a frequency adjustment instruction;

[0017] The high-voltage output end of the boost module is connected to the high-voltage discharge end of the DBD reactor, and is used to provide a boosted high-frequency AC voltage to the DBD reactor;

[0018] The DBD reactor is used to perform discharge work and generate sound wave signals during the discharge process;

[0019] The PID control unit is used to collect the acoustic wave signal generated by the DBD reactor during the discharge process, to amplify and remove impurities from the acoustic wave signal to obtain a discharge acoustic wave signal, and to generate a frequency adjustment instruction according to the discharge acoustic wave signal.

[0020] In some embodiments, the PID control unit includes a large diaphragm condenser microphone, a preamplifier and filter circuit, a PID microcontroller, and a PWM generator;

[0021] The large diaphragm condenser microphone is used to collect the sound wave signal generated by the DBD reactor during the discharge process;

[0022] The preamplifier and filter circuit is connected to a large diaphragm capacitor microphone to amplify the sound wave signal and remove interference signals to obtain a discharge sound wave signal;

[0023] The PID microcontroller is connected to the preamplifier and filter circuit, and is used to determine the output frequency of the high-frequency inverter according to the discharge sound wave signal;

[0024] The PWM generator is used to send a frequency adjustment instruction to the high-frequency inverter according to the output frequency.

[0025] To achieve the above-mentioned purpose, the third aspect of the present application provides a control method for a resonant frequency adaptive plasma ammonia production system, the method comprising:

[0026] Acquire the acoustic wave signal generated by the DBD reactor during the discharge process;

[0027] amplifying and filtering the acoustic wave signal to obtain a discharge acoustic wave signal;

[0028] determining an output frequency of a high-frequency inverter according to the discharge acoustic wave signal;

[0029] Determining a frequency adjustment instruction according to the output frequency;

[0030] The high-frequency inverter adjusts the high-frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction.

[0031] In some embodiments, determining the output frequency of the high-frequency inverter according to the discharge acoustic wave signal specifically includes: Determine the output frequency of the high-frequency inverter; where ω is the resonant angular frequency output by the high-frequency inverter, and C is the total equivalent capacitance of the DBD reactor in the discharge state. By collecting the discharge acoustic wave signal of the DBD reactor, the discharge gap capacitance C is obtained. g , through C g It is concluded that the total equivalent capacitance C, L is the equivalent inductance of the high-frequency inverter.

[0032] In some embodiments, the total equivalent capacitance of the DBD reactor in the discharge state is determined by: Determine the total equivalent capacitance C, where C g Represents the discharge gap capacitance, C d Represents the equivalent capacitance between the quartz silicon dielectric tube and the inner electrode.

[0033] In some embodiments, the discharge gap capacitor C g and dielectric layer capacitance C d according to Determine, where ε0 is the dielectric constant of vacuum, ε siO2 and ε m are the relative dielectric constants of quartz glass and nitrogen-hydrogen mixed gas at room temperature, l dis is the effective discharge length of the plasma reactor, r1, r2, and r3 are the outer radius, inner radius, and outer radius of the inner electrode of the quartz silicon dielectric tube, respectively.

[0034] In some embodiments, the high frequency inverter adjusts the high frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction, specifically including: the high frequency inverter frequency adjustment instruction adjusts the working angular frequency to the resonant angular frequency.

[0035] In some embodiments, the method further includes: the PID microcontroller pre-adjusts the operating frequency of the high-frequency inverter multiple times by controlling the PWM generator and records the value of the corresponding discharge acoustic wave signal;

[0036] Determine the peak value from the values ​​of the discharge acoustic wave signal obtained multiple times;

[0037] The frequency corresponding to the peak value is adjusted to the operating frequency of the DBD reactor through a PID algorithm.

[0038] To achieve the above-mentioned purpose, the fourth aspect of the present application proposes a computer device, including a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor performs the following steps:

[0039] Acquire the acoustic wave signal generated by the DBD reactor during the discharge process;

[0040] amplifying and filtering the acoustic wave signal to obtain a discharge acoustic wave signal;

[0041] determining an output frequency of a high-frequency inverter according to the discharge acoustic wave signal;

[0042] Determining a frequency adjustment instruction according to the output frequency;

[0043] The high-frequency inverter adjusts the high-frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction.

[0044] The embodiments of the present invention have the following beneficial effects:

[0045] The outer side of the high-voltage terminal in the present invention is connected to a circular wire brush support body with the high-voltage terminal as the symmetry center to ensure the coaxiality of the inner electrode; the outer side of the inner electrode is tightly fitted to the outer wall of the quartz dielectric tube to ensure that no discharge occurs inside the quartz dielectric tube; the design method of the built-in and equally spaced distribution of the outer electrode ensures efficient use of energy. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0047] in:

[0048] Figure 1 A 3D schematic diagram of a DBD reactor in one embodiment;

[0049] Figure 2 is a side view of a DBD reactor in one embodiment;

[0050] Figure 3 An equivalent circuit diagram of a resonant frequency adaptive plasma ammonia production system according to an embodiment;

[0051] Figure 4 The figure is a flow chart of a control method of a resonant frequency adaptive plasma ammonia production system in one embodiment. DETAILED DESCRIPTION

[0052] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0053] like Figure 1 , 2 As shown, in one embodiment, a DBD reactor is provided, comprising a high voltage terminal, a circumferential wire brush support, an inner electrode, a quartz silicon dielectric tube, and a mesh outer electrode;

[0054] The high voltage terminal is arranged along the axial direction;

[0055] The circumferential wire brush support body is sleeved on the outside of the high-voltage terminal and is used to support the inner electrode;

[0056] The inner wall of the inner electrode is attached to the outside of the wire brush support;

[0057] The quartz silicon dielectric tube comprises an inner tube wall and an outer tube wall, an air gap layer is formed between the inner tube wall and the outer tube wall, one end of the quartz silicon dielectric tube is also provided with an air inlet for introducing reaction gas, and the other end is provided with an air outlet for removing reaction gas products, the inner tube wall of the quartz silicon dielectric tube is sleeved on the outside of the inner electrode, and the inner electrode is tightly fitted with the inner tube wall of the quartz silicon dielectric tube;

[0058] A plurality of mesh-shaped outer electrodes are provided and arranged at equal intervals along the axial direction. The mesh-shaped outer electrodes are located in the air gap layer and are closely attached to the outer tube wall of the quartz silicon dielectric tube.

[0059] The outer side of the high-voltage terminal in the present invention is connected to a circular wire brush support body with the high-voltage terminal as the symmetry center, which is used to ensure the coaxiality of the inner electrode. The wire brush support body fits tightly to the inner side of the inner electrode, which not only supports the inner electrode, but also prevents unnecessary discharge from occurring inside the quartz dielectric tube, thereby protecting the normal operation of the reactor. The outer side of the inner electrode fits tightly to the inner tube wall of the quartz dielectric tube, which is used to ensure that no discharge occurs inside the quartz dielectric tube. The design method of built-in mesh outer electrodes and equidistant distribution ensures efficient use of energy.

[0060] Exemplarily, the plurality of mesh outer electrodes are arranged in an array at equal intervals and built into the air gap layer of the quartz silicon dielectric tube, and are closely attached to the outer tube wall of the quartz silicon dielectric tube.

[0061] The mesh outer electrode is built into the air gap layer of the quartz silicon dielectric tube and fits tightly with the outer tube wall of the quartz silicon dielectric tube, effectively solving the problem of extra power loss caused by the outer electrode exposed to air in the traditional coaxial DBD reactor and ensuring efficient use of energy.

[0062] The method of distributing the outer electrodes at equal intervals can effectively enhance the overall edge discharge effect of the electrodes, promote the occurrence of micro-discharge, ensure the uniformity of discharge, and thus improve the reaction efficiency of synthetic ammonia.

[0063] like Figure 3 As shown, in one embodiment, a resonant frequency adaptive plasma ammonia production system is provided, the system comprising: a DBD reactor, an AC power supply, a voltage regulating module, a rectifier circuit, and a PID control unit;

[0064] The AC power supply is connected to the input end of the voltage regulating module and is used to provide AC power to the voltage regulating module;

[0065] The output end of the voltage regulating module is connected to the input end of the rectifier circuit, and is used to adjust the output amplitude of the AC power supply;

[0066] The output end of the rectifier circuit is connected to the input end of the high-frequency inverter, and is used to convert the AC voltage into a DC voltage and transmit it to the high-frequency inverter;

[0067] The output end of the high-frequency inverter is connected to a boost module, which is used to convert a DC voltage into a high-frequency AC voltage according to a frequency adjustment instruction;

[0068] The high-voltage output end of the boost module is connected to the high-voltage discharge end of the DBD reactor, and is used to provide a boosted high-frequency AC voltage to the DBD reactor;

[0069] The DBD reactor is used to perform discharge work and generate sound wave signals during the discharge process;

[0070] The PID control unit is used to collect the acoustic wave signal generated by the DBD reactor during the discharge process, to amplify and remove impurities from the acoustic wave signal to obtain a discharge acoustic wave signal, and to generate a frequency adjustment instruction according to the discharge acoustic wave signal.

[0071] The present invention uses the resonance frequency adaptive technology, and the high-frequency inverter can adjust its output frequency according to the real-time discharge state of the DBD reactor, ensuring that the power supply operating frequency always matches the resonance frequency of the DBD discharge chamber, thereby improving the discharge efficiency.

[0072] like Figure 1 , 2 As shown, the DBD reactor includes a high voltage terminal, a circumferential wire brush support, an inner electrode, a quartz silicon dielectric tube, and a mesh outer electrode;

[0073] The high voltage terminal is arranged along the axial direction;

[0074] The circumferential wire brush support body is sleeved on the outside of the high-voltage terminal and is used to support the inner electrode;

[0075] The inner wall of the inner electrode is attached to the outside of the wire brush support;

[0076] The quartz silicon dielectric tube comprises an inner tube wall and an outer tube wall, an air gap layer is formed between the inner tube wall and the outer tube wall, one end of the quartz silicon dielectric tube is also provided with an air inlet for introducing reaction gas, and the other end is provided with an air outlet for removing reaction gas products, the inner tube wall of the quartz silicon dielectric tube is sleeved on the outside of the inner electrode, and the inner electrode is tightly fitted with the inner tube wall of the quartz silicon dielectric tube;

[0077] A plurality of mesh-shaped outer electrodes are provided and arranged at equal intervals along the axial direction. The mesh-shaped outer electrodes are located in the air gap layer and are closely attached to the outer tube wall of the quartz silicon dielectric tube.

[0078] Exemplarily, four mesh-shaped outer electrodes are provided, and the four mesh-shaped outer electrodes are equally spaced and built into the air gap layer, and are closely attached to the outer tube wall of the quartz silicon dielectric tube away from the center.

[0079] The mesh outer electrodes are built into the air gap layer at equal intervals and are closely attached to the outer tube wall of the quartz silicon dielectric tube away from the center of the circle, which increases the number of electrode edges, enhances the overall edge discharge effect of the electrode, promotes the occurrence of micro-discharge, and ensures the uniformity of discharge.

[0080] The method of distributing the outer electrodes at equal intervals can effectively enhance the overall edge discharge effect of the electrodes, promote the occurrence of micro-discharge, ensure the uniformity of discharge, and thus improve the reaction efficiency of synthetic ammonia.

[0081] The PID control unit includes a large diaphragm condenser microphone, a preamplifier and filter circuit, a PID microcontroller, and a PWM generator;

[0082] The large diaphragm condenser microphone is used to collect the sound wave signal generated by the DBD reactor during the discharge process;

[0083] The preamplifier and filter circuit is connected to a large diaphragm capacitor microphone to amplify the sound wave signal and remove interference signals to obtain a discharge sound wave signal;

[0084] The PID microcontroller is connected to the preamplifier and filter circuit, and is used to determine the output frequency of the high-frequency inverter according to the discharge sound wave signal;

[0085] The PWM generator is used to send a frequency adjustment instruction to the high-frequency inverter according to the output frequency.

[0086] like Figure 4 As shown, in one embodiment, a control method is provided, the method comprising:

[0087] Step S101: Acquire the acoustic wave signal generated by the DBD reactor during the discharge process;

[0088] Step S102: amplifying and filtering the acoustic wave signal to obtain a discharge acoustic wave signal;

[0089] Step S103: determining the output frequency of the high-frequency inverter according to the discharge acoustic wave signal;

[0090] Specifically, according to Determine the output frequency of the high-frequency inverter; where ω is the resonant angular frequency output by the high-frequency inverter, C is the total equivalent capacitance of the DBD reactor in the discharge state, and the discharge gap capacitance C is obtained by collecting the discharge acoustic wave signal of the DBD reactor. g , through C g It is concluded that the total equivalent capacitance C, L is the equivalent inductance of the high-frequency inverter.

[0091] The total equivalent capacitance of the DBD reactor in the discharge state is determined as follows: Determine the total equivalent capacitance C, where C g Represents the discharge gap capacitance, C d Represents the equivalent capacitance between the quartz silicon dielectric tube and the inner electrode.

[0092] The discharge gap capacitance C g and dielectric layer capacitance C d according to Determine, where ε0 is the dielectric constant of vacuum, ε sio2 and ε m are the relative dielectric constants of quartz glass and nitrogen-hydrogen mixed gas at room temperature, l dis is the effective discharge length of the plasma reactor, r1, r2, and r3 are the outer radius, inner radius, and outer radius of the inner electrode of the quartz silicon dielectric tube, respectively.

[0093] Step S104: determining a frequency adjustment instruction according to the output frequency;

[0094] Step S105: the high-frequency inverter adjusts the high-frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction.

[0095] Specifically, the high-frequency inverter frequency adjustment instruction adjusts the operating angular frequency to the resonant angular frequency.

[0096] Furthermore, before step S101, the method further includes:

[0097] Step S1001: The PID microcontroller adjusts the operating frequency of the high-frequency inverter multiple times in advance by controlling the PWM generator and records the value of the corresponding discharge sound wave signal;

[0098] Step S1002: determining a peak value from values ​​of discharge acoustic wave signals obtained multiple times;

[0099] Step S1003: adjusting the frequency corresponding to the peak value to the operating frequency of the DBD reactor through a PID algorithm.

[0100] In some implementations, step S1001: initialization and frequency scanning phase, includes:

[0101] Parameter setting, setting frequency scanning range; setting the adjustment step of high frequency inverter operating frequency;

[0102] Initialize the record array to record the value of the discharge acoustic wave signal obtained after each frequency adjustment; at the same time, initialize the corresponding frequency array to record the corresponding working frequency;

[0103] Frequency scanning and signal recording, starting from the minimum value in the set frequency range, the PID microcontroller sends control instructions to the PWM generator, and gradually adjusts the operating frequency of the high-frequency inverter according to the set step size. After each adjustment, wait for a period of stabilization, and then use the acoustic wave sensor to collect the current discharge acoustic wave signal value, and store the value in the array, and store the corresponding operating frequency in the array.

[0104] Repeat the above operation until the operating frequency reaches the maximum frequency in the set range, completing the traversal of the entire frequency scanning range.

[0105] Step S1002: peak value determination stage, including:

[0106] Data sorting and peak search, sorting the acoustic wave signal value data, and arranging the discharge acoustic wave signal values ​​in ascending order;

[0107] In the sorted array, find the element corresponding to the peak value and record its index in the working frequency array;

[0108] Get the frequency corresponding to the peak value, and find the corresponding operating frequency value according to the index through the previously recorded operating frequency array.

[0109] Step S1003: operating frequency adjustment phase, including:

[0110] PID parameter initialization, setting the three key parameters of the PID controller;

[0111] Set the target value, which is the peak value determined previously;

[0112] Frequency adjustment cycle, real-time acquisition of the current discharge acoustic wave signal value through the PID microcontroller;

[0113] Calculate the difference between the target peak magnitude and the current actual magnitude.

[0114] Step S1004: Operation monitoring and dynamic adjustment phase, including:

[0115] Real-time monitoring: When the DBD reactor is running stably at the adjusted operating frequency, the discharge acoustic wave signal value and the actual operating frequency of the high-frequency inverter are continuously monitored in real time, the acquisition step is set, data is collected, and recorded to form an operating data sequence;

[0116] Abnormal judgment and adjustment decision-making, setting parameter fluctuation thresholds, setting upper and lower fluctuation thresholds for the discharge acoustic wave signal value, and setting fluctuation thresholds for the operating frequency; regularly checking the collected data to determine whether the discharge acoustic wave signal value and the operating frequency exceed the corresponding set threshold range to determine whether the system is abnormal or deviates from the optimal working state, and whether dynamic adjustment is required;

[0117] Dynamic adjustment mechanism, when it is determined that adjustment is needed, the PID algorithm part in step S1003 is repeated, and the current actual parameters are used as the initial values. The PID controller is used to calculate the adjustment amount required for the operating frequency of the high-frequency inverter again, and then instructions are sent to make corresponding adjustments to restore the system to a stable working state, ensuring that the discharge acoustic wave signal value and the operating frequency are within a reasonable fluctuation range.

[0118] During the adjustment process, continue to monitor the status of various parameters in real time and repeat the above dynamic adjustment mechanism continuously to ensure that the DBD reactor can always maintain good performance and stable working state during the entire operation process.

[0119] The present invention can realize the self-adaptation of the resonant frequency by detecting the acoustic wave signal during the discharge of the DBD reactor without being equipped with expensive high-voltage detection equipment and complex control circuits. Compared with the phase-locked loop resonant frequency control method, the present invention avoids the problem of low precision of the resonant frequency adaptation caused by phase noise accumulation; compared with the two-terminal voltage detection feedback method, the present invention saves manufacturing costs and avoids the high-voltage risk caused by measurement. Compared with the ideal DBD discharge plasma model difference adjustment method, the present invention reduces the influence of various complex factors in the actual system and increases the precision of frequency adjustment.

[0120] Since the equivalent capacitance of the DBD reactor changes when the discharge state occurs, the present invention can achieve efficient discharge of the DBD reactor by adjusting the working angular frequency of the system to the resonant angular frequency.

[0121] In one embodiment, a computer device is provided, comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor performs the following steps:

[0122] Step S101: Acquire the acoustic wave signal generated by the DBD reactor during the discharge process;

[0123] Step S102: amplifying and filtering the acoustic wave signal to obtain a discharge acoustic wave signal;

[0124] Step S103: determining the output frequency of the high-frequency inverter according to the discharge acoustic wave signal;

[0125] Step S104: determining a frequency adjustment instruction according to the output frequency;

[0126] Step S105: the high-frequency inverter adjusts the high-frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction.

[0127] In one embodiment, a computer-readable storage medium is provided, storing a computer program, wherein when the computer program is executed by a processor, the processor performs the following steps:

[0128] Step S101: Acquire the acoustic wave signal generated by the DBD reactor during the discharge process;

[0129] Step S102: amplifying and filtering the acoustic wave signal to obtain a discharge acoustic wave signal;

[0130] Step S103: determining the output frequency of the high-frequency inverter according to the discharge acoustic wave signal;

[0131] Step S104: determining a frequency adjustment instruction according to the output frequency;

[0132] Step S105: the high-frequency inverter adjusts the high-frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction.

[0133] Those skilled in the art can understand that all or part of the processes in the above-mentioned embodiment methods can be completed by instructing the relevant hardware through a computer program, and the program can be stored in a non-volatile computer-readable storage medium. When the program is executed, it can include the processes of the embodiments of the above-mentioned methods. Among them, any reference to memory, storage, database or other media used in the embodiments provided in this application can include non-volatile and / or volatile memory. Non-volatile memory may include read-only memory (ROM), programmable ROM (PROM), electrically programmable ROM (EPROM), electrically erasable programmable ROM (EEPROM) or flash memory. Volatile memory may include random access memory (RAM) or external cache memory. As an illustration and not limitation, RAM is available in many forms, such as static RAM (SRAM), dynamic RAM (DRAM), synchronous DRAM (SDRAM), double data rate SDRAM (DDRSDRAM), enhanced SDRAM (ESDRAM), synchronous link (Synchlink) DRAM (SLDRAM), memory bus (Rambus) direct RAM (RDRAM), direct memory bus dynamic RAM (DRDRAM), and memory bus dynamic RAM (RDRAM).

[0134] The technical features of the above embodiments may be combined arbitrarily. To make the description concise, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0135] The above-mentioned embodiments only express several implementation methods of the present application, and the descriptions thereof are relatively specific and detailed, but they cannot be understood as limiting the scope of the present application. It should be pointed out that, for a person of ordinary skill in the art, several variations and improvements can be made without departing from the concept of the present application, and these all belong to the protection scope of the present application. Therefore, the protection scope of the present application shall be subject to the attached claims.

Claims

1. A DBD reactor, characterized in that: It includes a high-voltage terminal, a circumferential steel brush support, an inner electrode, a quartz silicon dielectric tube, and a mesh outer electrode; The high voltage terminal is arranged along the axial direction; The circumferential wire brush support body is sleeved on the outside of the high-voltage terminal and is used to support the inner electrode; The inner wall of the inner electrode is attached to the outside of the wire brush support; The quartz silicon dielectric tube comprises an inner tube wall and an outer tube wall, an air gap layer is formed between the inner tube wall and the outer tube wall, one end of the quartz silicon dielectric tube is also provided with an air inlet for introducing reaction gas, and the other end is provided with an air outlet for removing reaction gas products, the inner tube wall of the quartz silicon dielectric tube is sleeved on the outside of the inner electrode, and the inner electrode is tightly fitted with the inner tube wall of the quartz silicon dielectric tube; A plurality of mesh-shaped outer electrodes are provided and arranged at equal intervals along the axial direction. The mesh-shaped outer electrodes are located in the air gap layer and are closely attached to the outer tube wall of the quartz silicon dielectric tube.

2. A resonant frequency adaptive plasma ammonia production system, characterized in that: The system comprises: the DBD reactor as claimed in claim 1, an AC power supply, a voltage regulating module, a rectifier circuit, and a PID control unit; The AC power supply is connected to the input end of the voltage regulating module and is used to provide AC power to the voltage regulating module; The output end of the voltage regulating module is connected to the input end of the rectifier circuit, and is used to adjust the output amplitude of the AC power supply; The output end of the rectifier circuit is connected to the input end of the high-frequency inverter, and is used to convert the AC voltage into a DC voltage and transmit it to the high-frequency inverter; The output end of the high-frequency inverter is connected to a boost module, which is used to convert a DC voltage into a high-frequency AC voltage according to a frequency adjustment instruction; The high-voltage output end of the boost module is connected to the high-voltage discharge end of the DBD reactor, and is used to provide a boosted high-frequency AC voltage to the DBD reactor; The DBD reactor is used to perform discharge work and generate sound wave signals during the discharge process; The PID control unit is used to collect the acoustic wave signal generated by the DBD reactor during the discharge process, to amplify and remove impurities from the acoustic wave signal to obtain a discharge acoustic wave signal, and to generate a frequency adjustment instruction according to the discharge acoustic wave signal.

3. The resonant frequency adaptive plasma ammonia production system according to claim 2, characterized in that: The PID control unit includes a large diaphragm condenser microphone, a preamplifier and filter circuit, a PID microcontroller, and a PWM generator; The large diaphragm condenser microphone is used to collect the sound wave signal generated by the DBD reactor during the discharge process; The preamplifier and filter circuit is connected to a large diaphragm capacitor microphone to amplify the sound wave signal and remove interference signals to obtain a discharge sound wave signal; The PID microcontroller is connected to the preamplifier and filter circuit, and is used to determine the output frequency of the high-frequency inverter according to the discharge sound wave signal; The PWM generator is used to send a frequency adjustment instruction to the high-frequency inverter according to the output frequency.

4. A control method for the resonant frequency adaptive plasma ammonia production system according to any one of claims 2 to 3, characterized in that: The method includes: Acquire the acoustic wave signal generated by the DBD reactor during the discharge process; amplifying and filtering the acoustic wave signal to obtain a discharge acoustic wave signal; determining an output frequency of a high-frequency inverter according to the discharge acoustic wave signal; Determining a frequency adjustment instruction according to the output frequency; The high-frequency inverter adjusts the high-frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction.

5. The control method according to claim 4, characterized in that: Determining the output frequency of the high-frequency inverter according to the discharge acoustic wave signal specifically includes: Determine the output frequency of the high-frequency inverter; where ω is the resonant angular frequency output by the high-frequency inverter, C is the total equivalent capacitance of the DBD reactor in the discharge state, and the discharge gap capacitance C is obtained by collecting the discharge acoustic wave signal of the DBD reactor. g , through C g It is concluded that the total equivalent capacitance C, L is the equivalent inductance of the high-frequency inverter.

6. The control method according to claim 5, characterized in that: The total equivalent capacitance of the DBD reactor in the discharge state is determined as follows: Determine the total equivalent capacitance C, where C g Represents the discharge gap capacitance, C d Represents the equivalent capacitance between the quartz silicon dielectric tube and the inner electrode.

7. The control method according to claim 6, characterized in that: The discharge gap capacitance C g and dielectric layer capacitance C d according to Determine, where ε0 is the dielectric constant of vacuum, ε sio2 and ε m are the relative dielectric constants of quartz glass and nitrogen-hydrogen mixed gas at room temperature, l dis is the effective discharge length of the plasma reactor, r1, r2, and r3 are the outer radius, inner radius, and outer radius of the inner electrode of the quartz silicon dielectric tube, respectively.

8. The control method according to claim 4, characterized in that: The high-frequency inverter adjusts the high-frequency AC voltage output to the DBD reactor according to the frequency adjustment instruction, which specifically includes: the high-frequency inverter frequency adjustment instruction adjusts the working angular frequency to the resonant angular frequency.

9. The control method according to claim 4, characterized in that: The method further comprises: the PID microcontroller adjusts the working frequency of the high-frequency inverter multiple times in advance by controlling the PWM generator and records the value of the corresponding discharge sound wave signal; Determine the peak value from the values ​​of the discharge acoustic wave signal obtained multiple times; The frequency corresponding to the peak value is adjusted to the operating frequency of the DBD reactor through a PID algorithm.

10. A computer device comprising a memory and a processor, wherein the memory stores a computer program, and when the computer program is executed by the processor, the processor executes the steps of the method according to any one of claims 4 to 9.

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