Defect layout repairing method and device, equipment, medium and product

By obtaining and evaluating the repair evaluation value of defect areas in the mask design layout, and moving and repairing them, the problem of poor repair results caused by inaccurate selection of defect layouts in the existing technology is solved, and more accurate defect layout repair and improvement of repair effects is achieved.

CN119575751AActive Publication Date: 2025-03-07SHENZHEN JINGYUAN INFORMATION TECH CO LTD

Patent Information

Application Number
CN202411616372.7
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-11-12
Publication Date
2025-03-07
Estimated Expiration
2044-11-12

AI Technical Summary

Technical Problem

The selection of defect layouts in the prior art is not accurate enough, resulting in new defect points around the repaired defect layout, resulting in poor repair effect of mask design layout.

Method used

By obtaining the first defect area and the second defect area in the mask design layout, the first repair evaluation value of the first defect area and the second repair evaluation value of the second defect area are determined, and the second defect area is moved according to these evaluation values, and the target defect layout is obtained and repaired.

Benefits of technology

Accurately locate the target defect layout in the mask design layout that meets the requirements to avoid new defect points around the repaired defect layout, thereby improving the repair effect of the mask design layout.

✦ Generated by Eureka AI based on patent content.

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Patent Text Reader

Abstract

The invention discloses a defect layout repairing method, device and equipment, a medium and a product, and relates to the technical field of semiconductor integrated circuits. The defect layout repairing method comprises the following steps: acquiring a first defect area and a second defect area in a mask design layout, wherein the first defect area comprises the second defect area; according to the first defect area and the second defect area, a first repair evaluation value of the first defect area and a second repair evaluation value of the second defect area are determined, and the first repair evaluation value is used for representing the graph offset degree of the first defect area caused by repair of the second defect area; the second repair evaluation value is used for representing the graph offset degree of the second defect area caused by repairing the second defect area; moving the second defect area according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout; and repairing the target defect layout in the mask design layout to obtain a repaired mask layout.
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Description

Technical Field

[0001] The present application belongs to the field of semiconductor integrated circuit technology, and in particular, relates to a method, device, equipment, medium and product for repairing a defective layout. Background Art

[0002] In the manufacturing process of semiconductor integrated circuits, the pattern on the mask is projected onto the photoresist through the exposure system. However, due to the imperfections of the optical system and the diffraction effect, the pattern on the photoresist and the pattern on the mask are not completely consistent. At this time, the pattern defects on the mask need to be corrected.

[0003] In the existing method, the defect point in the mask design layout is first obtained, and then the defect layout is obtained from the mask design layout according to a preset size at the defect point position, and the defect layout is repaired using the optical proximity effect.

[0004] However, the selection of defective layout in the existing method is not accurate enough, which may easily lead to the generation of new defect points around the repaired defective layout, resulting in poor repair effect of the mask design layout. Summary of the invention

[0005] The embodiments of the present application provide a method, device, equipment, medium and product for repairing a defective layout, which can improve the repair effect of the mask design layout.

[0006] In one aspect of an embodiment of the present application, a method for repairing a defective layout is provided, comprising:

[0007] Acquire a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region;

[0008] Determine, according to the first defect region and the second defect region, a first repair evaluation value of the first defect region and a second repair evaluation value of the second defect region, wherein the first repair evaluation value is used to characterize the degree of pattern deviation of the first defect region caused by repairing the second defect region, and the second repair evaluation value is used to characterize the degree of pattern deviation of the second defect region caused by repairing the second defect region;

[0009] According to the first repair evaluation value and the second repair evaluation value, the second defect area is moved to obtain a target defect map;

[0010] The target defective layout in the mask design layout is repaired to obtain a repaired mask layout.

[0011] In one aspect of an embodiment of the present application, a defective layout repairing device is provided, comprising:

[0012] A region acquisition module, used to acquire a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region;

[0013] an evaluation value determination module, used to determine, according to the first defect area and the second defect area, a first repair evaluation value of the first defect area and a second repair evaluation value of the second defect area, wherein the first repair evaluation value is used to characterize the degree of graphic deviation of the first defect area caused by repairing the second defect area, and the second repair evaluation value is used to characterize the degree of graphic deviation of the second defect area caused by repairing the second defect area;

[0014] A region moving module, used for moving the second defect region according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout;

[0015] The layout repair module is used to repair the target defective layout in the mask design layout to obtain a repaired mask layout.

[0016] According to one aspect of an embodiment of the present application, an electronic device is provided, which includes: a memory and a program or instruction stored in the memory and executable on a processor, wherein when the program or instruction is executed by the processor, a method for repairing a defective layout as provided in any aspect of the above-mentioned embodiment of the present application is implemented.

[0017] In one aspect of an embodiment of the present application, a readable storage medium is provided, on which a program or instruction is stored. When the program or instruction is executed by a processor, a method for repairing a defective layout provided in any aspect of the above-mentioned embodiment of the present application is implemented.

[0018] According to one aspect of an embodiment of the present application, a computer program product is provided. When instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes a method for repairing a defective layout as provided in any aspect of the above-mentioned embodiment of the present application.

[0019] In the defective layout repair method provided in the embodiment of the present application, the first defect area and the second defect area in the mask design layout are obtained. Then, according to the first repair evaluation value of the first defect area and the second repair evaluation value of the second defect area, it is possible to determine the degree of graphic deviation of the first defect area caused by repairing the second defect area and the degree of graphic deviation of the second defect area caused by repairing the second defect area, so as to accurately judge whether the repair result can be consistent with the surrounding environment. At the same time, according to the first repair evaluation value, the degree of graphic deviation of the first defect area caused by repairing the second defect area is determined, and it can be determined whether the repair of the second defect area will cause new defect points in the surrounding area. In this way, according to the first repair evaluation value and the second repair evaluation value, the second defect area is moved, so as to accurately locate the target defective layout that meets the requirements in the mask design layout, which can avoid the generation of new defect points around the repaired defective layout, thereby improving the repair effect of the mask design layout. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] In order to more clearly illustrate the technical solution of the embodiments of the present application, the following is a brief introduction to the drawings required for use in the embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without any creative work.

[0021] Figure 1 It is a flowchart of a method for repairing a defective layout provided by an embodiment of the present application;

[0022] Figure 2 is a schematic diagram of a defect background layout provided by an embodiment of the present application;

[0023] Figure 3 It is a structural schematic diagram of a defective layout repair device provided by an embodiment of the present application;

[0024] Figure 4 It is a structural schematic diagram of a defective layout repair device provided by an embodiment of the present application. DETAILED DESCRIPTION

[0025] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only intended to explain the present application, rather than to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.

[0026] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0027] It should be noted that the acquisition, storage, use, and processing of data in the technical solution of this application are in compliance with the relevant provisions of national laws and regulations.

[0028] It should be noted that in the embodiments of the present application, certain software, components, models and other existing solutions in the industry may be mentioned, and they should be regarded as exemplary. Their purpose is only to illustrate the feasibility of implementing the technical solution of the present application, but it does not mean that the applicant has or will necessarily use the solution.

[0029] In the existing method, the defect point in the mask design layout is first obtained, and then the defect layout is obtained from the mask design layout according to the preset size at the defect point position, and the defect layout is repaired using the optical proximity effect. However, the selection of the defect layout in the existing method is not accurate enough, which easily leads to the generation of new defect points around the repaired defect layout, resulting in poor repair effect of the mask design layout.

[0030] The purpose of the present application is to provide a method, device, equipment, medium and product for repairing a defective layout. In the method for repairing a defective layout provided in the embodiment of the present application, a first defective area and a second defective area in the mask design layout are obtained. Then, according to the first repair evaluation value of the first defective area and the second repair evaluation value of the second defective area, it is possible to determine the degree of graphic deviation of the first defective area caused by repairing the second defective area and the degree of graphic deviation of the second defective area caused by repairing the second defective area, so as to accurately judge whether the repair result can be consistent with the surrounding environment. At the same time, according to the first repair evaluation value, the degree of graphic deviation of the first defective area caused by repairing the second defective area can be determined, and it can be determined whether the repair of the second defective area will cause new defect points to be generated in the surrounding area. In this way, according to the first repair evaluation value and the second repair evaluation value, the second defective area is moved, so as to accurately locate the target defective layout that meets the requirements in the mask design layout, which can avoid the generation of new defect points around the repaired defective layout, thereby improving the repair effect of the mask design layout.

[0031] The following describes specific embodiments of the defective layout repair method, device, equipment, medium and product provided in the embodiments of the present application. First, the defective layout repair method is introduced.

[0032] Figure 1 A flow chart of a method for repairing a defective layout is provided. The method for repairing a defective layout can be applied to a server. The method for repairing a defective layout can include the following S101 to S104.

[0033] S101, obtaining a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region.

[0034] In this embodiment, the first defect region and the second defect region are used to characterize the region where the defect point is located, that is, the defect point is located in the first defect region and the second defect region. The area of ​​the first defect region is larger than the area of ​​the second defect region, and the first defect region completely includes the second defect region.

[0035] As an example, the server performs an optical proximity effect check on the mask design layout to obtain defect points in the mask design layout. Then, according to the position of the defect point, the mask design layout is divided into a first defect area and a second defect area, so that the first defect area and the second defect area cover the defect point position, and the first defect area includes the second defect area.

[0036] S102, determining a first repair evaluation value of the first defect area and a second repair evaluation value of the second defect area based on the first defect area and the second defect area, wherein the first repair evaluation value is used to characterize the degree of graphic deviation of the first defect area caused by repairing the second defect area, and the second repair evaluation value is used to characterize the degree of graphic deviation of the second defect area caused by repairing the second defect area.

[0037] In this embodiment, the second defect region is a region participating in the defect point repair, and the non-overlapping region between the first defect region and the second defect region is a region not participating in the defect point repair.

[0038] The first repair evaluation value is used to characterize the degree of deviation of the pattern in the first defect area caused by repairing the second defect area. Specifically, the first repair evaluation value can be the deviation amount or shape distortion of the pattern in the first defect area.

[0039] The second repair evaluation value is used to characterize the degree of deviation of the pattern in the second defective area caused by repairing the second defective area. Specifically, the second repair evaluation value may be the deviation amount or the distortion degree of the pattern in the second defective area.

[0040] As an example, after obtaining the first defect area and the second defect area in the mask design layout, the server performs simulation repair on the layout corresponding to the second defect area, thereby obtaining a layout repair result after simulation repair.

[0041] Then, the layout repair results after simulation repair are compared with the original layouts corresponding to the first defect area and the second defect area respectively, and the graphic distortion of the first defect area and the graphic distortion of the second defect area are evaluated to obtain the first repair evaluation value and the second repair evaluation value.

[0042] S103, moving the second defect area according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout.

[0043] In this embodiment, the target defect layout is used to characterize the local layout that needs to repair defect points in the final mask design layout.

[0044] As an example, the server formulates an optimization strategy based on the first repair evaluation value and the second repair evaluation value. Specifically, this optimization strategy aims to find a balance point, that is, while minimizing the graphic deviation of the second defect area itself, it also minimizes the impact on the first defect area.

[0045] Then, according to the optimization strategy, the second defect area is slightly moved or deformed to obtain a reasonable defect area that can minimize the first repair evaluation value and the second repair evaluation value, and the layout corresponding to the reasonable defect area is determined as the target defect layout.

[0046] S104, repairing the target defective layout in the mask design layout to obtain a repaired mask layout.

[0047] In this embodiment, the repaired mask layout is used to represent the mask design layout after defective points are repaired.

[0048] As an example, the server adopts a preset repair strategy (such as line repair, line deletion, and size adjustment, etc.) to repair the target defective layout in the mask design layout, thereby obtaining a repaired repair mask layout.

[0049] At the same time, after the repair is completed, the server needs to verify the repaired mask design layout to ensure that all defects have been properly handled and no new defects have been introduced. If the verification passes, the final repaired mask layout can be obtained.

[0050] In the defective layout repair method provided in the present embodiment, the first defective area and the second defective area in the mask design layout are obtained. Then, according to the first repair evaluation value of the first defective area and the second repair evaluation value of the second defective area, it is possible to determine the degree of graphic deviation of the first defective area caused by repairing the second defective area and the degree of graphic deviation of the second defective area caused by repairing the second defective area, so as to accurately judge whether the repair result can be consistent with the surrounding environment. At the same time, according to the first repair evaluation value, the degree of graphic deviation of the first defective area caused by repairing the second defective area is determined, and it can be determined whether the repair of the second defective area will cause new defect points in the surrounding area. In this way, according to the first repair evaluation value and the second repair evaluation value, the second defective area is moved, so as to accurately locate the target defective layout that meets the requirements in the mask design layout, which can avoid the generation of new defect points around the repaired defective layout, thereby improving the repair effect of the mask design layout.

[0051] As an optional embodiment, S101 may specifically include:

[0052] Taking the defect point position in the mask design layout as the center, extending outward by a first preset size to obtain a first defect area;

[0053] Taking the defect point position in the mask design layout as the center, a second preset size is extended outward to obtain a second defect area, and the second preset size is smaller than the first preset size.

[0054] In this embodiment, the second preset size is used to characterize a size length set according to experimental data or industry standards that can ensure that the defect point can be effectively identified and repaired, which is used to construct the second defect area.

[0055] The first preset size is used to characterize the size length set according to experimental data or industry standards, which can ensure that the defect point is effectively identified and repaired, and accurately identify whether unnecessary interference is caused to the surrounding area, and is used to construct the first defect area.

[0056] As an example, the server takes the defect point position in the mask design layout as the center and extends outward according to a first preset size (eg, 0.5um x 0.5um) to obtain a slightly larger circular area or rectangular area as the first defect area.

[0057] At the same time, taking the defect point position in the mask design layout as the center and extending outward according to a second preset size (eg, 0.2um×0.2um), a smaller circular area or rectangular area is obtained as the second defect area.

[0058] Through this embodiment, the first defect area and the second defect area are constructed by extending the first preset size and the second preset size outward with the defect point position in the mask design layout as the center. This helps to accurately judge whether new defect points will be generated in the surrounding area when the second defect area is repaired based on the first defect area and the second defect area. This can avoid the generation of new defect points around the repaired defect layout, and improve the repair effect of the mask design layout.

[0059] As an optional embodiment, S102 may specifically include:

[0060] Acquire a first evaluation point in the first defect area and a second evaluation point in the second defect area;

[0061] According to the first defect area and the second defect area, determining a first offset value of each first evaluation point and a second offset value of each second evaluation point after simulation repair of the second defect area;

[0062] A first restoration evaluation value is determined according to the first offset value of each first evaluation point, and a second restoration evaluation value is determined according to the second offset value of each second evaluation point.

[0063] In this embodiment, the first evaluation point is a position point in the first defect region that can reflect the characteristics of the first defect region, and the second evaluation point is a position point in the second defect region that can reflect the characteristics of the second defect region.

[0064] The first offset value is used to characterize the change in position of the first evaluation point before and after the defect point is repaired, and the second offset value is used to characterize the change in position of the second evaluation point before and after the defect point is repaired.

[0065] As an example, the server sets a plurality of first evaluation points and a plurality of second evaluation points in the first defect area and the second defect area in the mask design layout according to a preset sampling strategy. Specifically, the preset sampling strategy may be to set one evaluation point at a preset distance.

[0066] Then, based on simulation software (such as finite element analysis software, physical simulation software, etc.), the second defect area is simulated and repaired. The simulation repair process may include steps such as filling materials, adjusting shapes, and optimizing structures to simulate the actual repair process. After the simulation repair, the first offset value of each first evaluation point and the second offset value of each second evaluation point are calculated.

[0067] Finally, the first restoration evaluation value is calculated according to the first offset value of each first evaluation point, and the second restoration evaluation value is calculated according to the second offset value of each second evaluation point. The first restoration evaluation value and the second restoration evaluation value belong to a comprehensive index, which can be characterized by the cumulative value, average value or standard deviation of the offset.

[0068] Through this embodiment, by using the steps of obtaining evaluation points, determining offset values, calculating repair evaluation values, etc., the first repair evaluation value of the first defect area and the second repair evaluation value of the second defect area can be accurately determined. This helps to accurately judge whether new defect points will be generated in the surrounding area when repairing the second defect area based on the first repair evaluation value and the second repair evaluation value. This can avoid the generation of new defect points around the repaired defective layout, and can improve the repair effect of the mask design layout.

[0069] As an optional embodiment, determining the first offset value of each first evaluation point and the second offset value of each second evaluation point after the simulation repair of the second defect area according to the first defect area and the second defect area may specifically include:

[0070] Performing simulation repair on the second defective area to obtain a first simulation repaired area corresponding to the first defective area and a second simulation repaired area corresponding to the second defective area;

[0071] Comparing the first defect area with the first simulation repair area to obtain a first offset value of each first evaluation point in the first defect area;

[0072] The second defect area is compared with the second simulation repair area to obtain a second offset value of each second evaluation point in the second defect area.

[0073] In this embodiment, the first simulated repair region is used to represent a region corresponding to the first defect region after the second defect region is simulated repaired.

[0074] The second simulated repair region is used to represent a region corresponding to the second defect region after the second defect region is simulated repaired.

[0075] As an example, the server accurately simulates the position and shape of the first defect area and the second defect area in the simulation model, and then performs a repair operation on the second defect area in the simulation model. After the simulation repair of the second defect area, a first simulation repair area corresponding to the first defect area and a second simulation repair area corresponding to the second defect area are obtained.

[0076] Then, the first defect area is compared with the first simulated repair area, and the first offset value of each first evaluation point in the first defect area is obtained by comparing the position change of each first evaluation point before and after the repair. The second defect area is compared with the second simulated repair area, and the second offset value of each second evaluation point in the second defect area is calculated in the same way. The calculation of the offset value can be achieved by measuring the coordinate difference of the evaluation point before and after the repair.

[0077] Through this embodiment, by performing simulation repair on the second defect area, the first simulation repair area and the second simulation repair area are obtained. Therefore, the first offset value of the first evaluation point and the second offset value of the second evaluation point can be accurately calculated through the first simulation repair area and the second simulation repair area. This helps to accurately calculate the first repair evaluation value of the first defect area and the second repair evaluation value of the second defect area according to the first offset value and the second offset value.

[0078] As an optional embodiment, S103 may specifically include:

[0079] Moving the second defect area multiple times to obtain multiple candidate defect areas;

[0080] For each candidate defect area, respectively determine a first update and repair evaluation value and a second update and repair evaluation value corresponding to each candidate defect area;

[0081] The target defect layout in the mask design layout is determined according to the candidate defect regions corresponding to the smallest first update and repair evaluation values ​​and the smallest second update and repair evaluation values.

[0082] In this embodiment, the candidate defect region is used to represent the region corresponding to the second defect region after being moved.

[0083] The first update repair evaluation value is used to characterize the degree of graphic deviation of the first defect area caused by repairing the candidate defect area; the second update repair evaluation value is used to characterize the degree of graphic deviation of the candidate defect area caused by repairing the candidate defect area obtained after moving the second defect area.

[0084] As an example, the server generates multiple different candidate defect regions by making slight position adjustments or shape changes to the second defect region, wherein these adjustments may be made based on preset rules, random search or optimization algorithms.

[0085] Then, for each candidate defect area, the first updated repair evaluation value of the first defect area and the second updated repair evaluation value of the candidate defect area are determined after the defect point of the candidate defect area is repaired according to the same calculation method as the first repair evaluation value and the second repair evaluation value mentioned above.

[0086] Finally, among all the candidate defect regions, the target candidate defect region that satisfies both the minimum first update repair evaluation value and the minimum second update repair evaluation value is found, and the layout corresponding to the target candidate defect region in the mask design layout is determined as the target defect layout. This means that it is possible to avoid the generation of new defect points around the target defect layout after the defect point is repaired.

[0087] Through this embodiment, the second defect area is moved multiple times to obtain multiple candidate defect areas. Among the candidate defect areas, the layout corresponding to the candidate defect area with the smallest first update repair evaluation value and the smallest second update repair evaluation value is selected as the target defect layout. This can avoid the generation of new defect points around the repaired defect layout, and can improve the repair effect of the mask design layout.

[0088] As an optional embodiment, before S101, the method for repairing the defective layout may further include:

[0089] Taking the defect point position in the mask design layout as the center, extending outward by a third preset size to obtain a defect background area;

[0090] Segmenting a defect background layout corresponding to the defect background area from the mask design layout;

[0091] S101 may specifically include:

[0092] A first defect region and a second defect region in the defect background map are obtained.

[0093] In this embodiment, the third preset size is larger than the first preset size, and the first preset size is larger than the second preset size.

[0094] The defect background map includes a first defect region, and the first defect region completely includes a second defect region.

[0095] As an example, Figure 2 As shown, a schematic diagram of a defect background layout is provided. Specifically, the server takes the defect point position 204 in the mask design layout as the center and extends outward according to a third preset size (eg, 5um*5um) to obtain a larger rectangular area as the defect background area.

[0096] Then, a defect background layout 201 corresponding to the defect background area in the mask design layout is determined and segmented from the mask design layout. At the same time, in the defect background layout 201, a first defect area 202 is determined according to a first preset size; and a second defect area 203 is determined according to a second preset size.

[0097] Through this embodiment, a defect background map with a larger range including the defect point position is obtained in the mask design map as an environment for repairing the defect point, which can ensure that the result of merging back to the original mask design map after the defect point is repaired is in line with expectations, and avoid the phenomenon that the result of merging back to the original mask design map after the defect point is repaired is not in line with expectations.

[0098] As an optional embodiment, S104 may specifically include:

[0099] Repairing the target defect pattern in the defect background pattern through the optical proximity effect to obtain a repaired defect background pattern;

[0100] The repaired defect background layout is merged with the mask design layout to obtain a repaired mask layout.

[0101] In this embodiment, after determining the target defect layout in the defect background layout, the server uses the optical proximity effect correction technology to repair the target defect, wherein the optical proximity effect correction technology includes methods such as minimizing line width change, reducing line end shortening, and square corner correction.

[0102] Specifically, the line width change minimization method corrects the proximity effect and nonlinear distortion by adjusting the line width of the graphics; the line end shortening reduction method reduces line end shortening by extending the line end and adding truncation-type or hammerhead-type correction graphics; the square corner correction method reduces the rounding of square corners by performing compensating truncation-type correction on the square corner area.

[0103] Then, after the target defective layout is repaired, the repaired defective background layout is spliced ​​back to the original mask design layout to obtain a repaired mask layout, thereby ensuring that the repaired pattern can be accurately copied to the chip.

[0104] Through this embodiment, the target defect in the defect background layout is repaired by utilizing the method of optical proximity effect repair and mask design layout fusion, so that a repair mask layout that meets the design requirements can be generated, and the repair effect of the mask design layout can be improved.

[0105] As an optional embodiment, after S104, the method for repairing the defective layout may further include:

[0106] Performing lithography rule check on the repaired mask layout to obtain rule check results;

[0107] When the rule checking result indicates that the repair mask layout complies with the preset photolithography rules, the repair mask layout is determined as the target mask layout for preparing the mask.

[0108] In this embodiment, the server defines a series of lithography rules according to the requirements of the lithography process and the standards of semiconductor manufacturing. After obtaining the repair mask layout, the server uses the lithography rule checking software to scan and analyze the repair mask layout. Among them, the lithography rule checking software will check each graphic element in the repair mask layout according to the pre-defined lithography rules and generate rule checking results.

[0109] When the rule check result indicates that the repaired mask layout meets the preset lithography rules, it can be considered that the layout has met the requirements of the lithography process. At this time, the repaired mask layout is determined as the target mask layout for preparing the mask. This step marks the end of the lithography rule check process and provides a reliable basis for subsequent mask preparation and chip manufacturing.

[0110] Through this embodiment, the repair mask layout is checked for lithography rules, so that it can be ensured that the repair mask layout meets the requirements of the lithography process, and the repair mask layout is determined as the target mask layout for preparing the mask. In this way, further checking the lithography rules of the repair mask layout can improve the reliability of chip manufacturing.

[0111] A repair method based on a defective layout. Accordingly, the present application also provides a specific embodiment of a repair device for a defective layout.

[0112] like Figure 3 As shown, the defective layout repairing device 300 provided in the embodiment of the present application includes a region acquisition module 310 , an evaluation value determination module 320 , a region movement module 330 and a layout repairing module 340 .

[0113] The region acquisition module 310 is used to acquire a first defect region and a second defect region in the mask design layout, where the first defect region includes the second defect region.

[0114] The evaluation value determination module 320 is used to determine a first repair evaluation value of the first defect area and a second repair evaluation value of the second defect area based on the first defect area and the second defect area, wherein the first repair evaluation value is used to characterize the degree of graphic deviation of the first defect area caused by repairing the second defect area, and the second repair evaluation value is used to characterize the degree of graphic deviation of the second defect area caused by repairing the second defect area.

[0115] The region moving module 330 is used to move the second defect region according to the first repair evaluation value and the second repair evaluation value to obtain a target defect layout.

[0116] The layout repair module 340 is used to repair the target defective layout in the mask design layout to obtain a repaired mask layout.

[0117] As an optional embodiment, the region acquisition module 310 specifically includes the following units:

[0118] An area acquisition unit, used to extend a first preset size outward with a defect point position in the mask design layout as the center to obtain a first defect area;

[0119] The area acquisition unit is used to extend outward a second preset size with the defect point position in the mask design layout as the center to obtain a second defect area, and the second preset size is smaller than the first preset size.

[0120] As an optional embodiment, the evaluation value determination module 320 specifically includes the following units:

[0121] An evaluation point acquisition unit, configured to acquire a first evaluation point in the first defect area and a second evaluation point in the second defect area;

[0122] An offset value determination unit, used to determine, according to the first defect area and the second defect area, a first offset value of each first evaluation point and a second offset value of each second evaluation point after simulation repair of the second defect area;

[0123] The first evaluation value determining unit is used to determine a first restoration evaluation value according to a first offset value of each first evaluation point, and to determine a second restoration evaluation value according to a second offset value of each second evaluation point.

[0124] As an optional embodiment, the offset value determining unit is specifically configured to:

[0125] Performing simulation repair on the second defective area to obtain a first simulation repaired area corresponding to the first defective area and a second simulation repaired area corresponding to the second defective area;

[0126] Comparing the first defect area with the first simulation repair area to obtain a first offset value of each first evaluation point in the first defect area;

[0127] The second defect area is compared with the second simulation repair area to obtain a second offset value of each second evaluation point in the second defect area.

[0128] As an optional embodiment, the area movement module 330 specifically includes the following units:

[0129] A region moving unit, used for moving the second defect region multiple times to obtain multiple candidate defect regions;

[0130] A second evaluation value determination unit, for determining, for each candidate defect region, a first update and repair evaluation value and a second update and repair evaluation value corresponding to each candidate defect region;

[0131] The layout determination unit is used to determine the target defect layout in the mask design layout according to the candidate defect area corresponding to the minimum first update repair evaluation value and the minimum second update repair evaluation value.

[0132] As an optional embodiment, before obtaining the first defective region and the second defective region in the mask design layout, the defective layout repairing device 300 further includes the following modules:

[0133] A background determination module is used to extend a third preset size outward with the defect point position in the mask design layout as the center to obtain a defect background area;

[0134] A layout segmentation module is used to segment a defect background layout corresponding to a defect background area from a mask design layout;

[0135] The region acquisition module 310 is specifically used for:

[0136] A first defect region and a second defect region in the defect background map are obtained.

[0137] As an optional embodiment, the layout repair module 340 specifically includes the following units:

[0138] A layout repair unit, used for repairing a target defective layout in a defective background layout through an optical proximity effect to obtain a repaired defective background layout;

[0139] The layout fusion unit is used to fuse the repaired defect background layout with the mask design layout to obtain a repaired mask layout.

[0140] As an optional embodiment, after repairing the target defective layout in the mask design layout to obtain the repaired mask layout, the defective layout repairing device 300 further includes the following modules:

[0141] A rule detection module is used to perform lithography rule checking on the repair mask layout to obtain rule checking results;

[0142] The layout determination module is used to determine the repair mask layout as the target mask layout for preparing the mask when the rule check result indicates that the repair mask layout meets the preset lithography rules.

[0143] A repair method based on a defective layout. Accordingly, the present application also provides a specific embodiment of a repair device for a defective layout.

[0144] Figure 4 A schematic diagram of the hardware structure of a defective layout repair device provided in an embodiment of the present application is shown.

[0145] The defective layout repairing device may include a processor 401 and a memory 402 storing computer program instructions.

[0146] Specifically, the processor 401 may include a central processing unit (CPU), or an application specific integrated circuit (ASIC), or may be configured to implement one or more integrated circuits of the embodiments of the present application.

[0147] Memory 402 may include a large capacity memory for data or instructions. By way of example and not limitation, memory 402 may include a hard disk drive (HDD), a floppy disk drive, a flash memory, an optical disk, a magneto-optical disk, a magnetic tape, or a universal serial bus (USB) drive or a combination of two or more of these. In appropriate cases, memory 402 may include a removable or non-removable (or fixed) medium. In appropriate cases, memory 402 may be inside or outside of an integrated gateway disaster recovery device. In a specific embodiment, memory 402 is a non-volatile solid-state memory.

[0148] The processor 401 reads and executes the computer program instructions stored in the memory 402 to implement any one of the defective layout repairing methods in the above embodiments.

[0149] In one example, the defective layout repair device may further include a communication interface 403 and a bus 410. Figure 4 As shown, the processor 401, the memory 402, and the communication interface 403 are connected via a bus 410 and communicate with each other.

[0150] The communication interface 403 is mainly used to implement communication between various modules, devices, units and / or equipment in the embodiments of the present application.

[0151] Bus 410 includes hardware, software or both, and the parts of the repair equipment of the defective layout are coupled to each other. For example, but not limitation, the bus may include accelerated graphics port (AGP) or other graphics bus, enhanced industrial standard architecture (EISA) bus, front-side bus (FSB), hypertransport (HT) interconnection, industrial standard architecture (ISA) bus, infinite bandwidth interconnection, low pin count (LPC) bus, memory bus, micro channel architecture (MCA) bus, peripheral component interconnection (PCI) bus, PCI-Express (PCI-X) bus, serial advanced technology attachment (SATA) bus, video electronics standard association local (VLB) bus or other suitable bus or two or more of these combinations. In appropriate cases, bus 410 may include one or more buses. Although the present application embodiment describes and shows a specific bus, the present application considers any suitable bus or interconnection.

[0152] In addition, in combination with the defective layout repair method in the above embodiment, the embodiment of the present application can provide a computer storage medium for implementation. The computer storage medium stores computer program instructions; when the computer program instructions are executed by the processor, any defective layout repair method in the above embodiment is implemented.

[0153] In addition, in combination with the defective layout repair method in the above-mentioned embodiment, the embodiment of the present application can provide a computer program product for implementation. When the instructions in the computer program product are executed by the processor of an electronic device, the electronic device executes the defective layout repair method provided by any aspect of the above-mentioned embodiment of the present application.

[0154] It should be clear that the present application is not limited to the specific configuration and processing described above and shown in the figures. For the sake of simplicity, a detailed description of the known method is omitted here. In the above embodiments, several specific steps are described and shown as examples. However, the method process of the present application is not limited to the specific steps described and shown, and those skilled in the art can make various changes, modifications and additions, or change the order between the steps after understanding the spirit of the present application.

[0155] The functional blocks shown in the above-described block diagram can be implemented as hardware, software, firmware or a combination thereof. When implemented in hardware, it can be, for example, an electronic circuit, an application specific integrated circuit (ASIC), appropriate firmware, a plug-in, a function card, etc. When implemented in software, the elements of the present application are programs or code segments that are used to perform the required tasks. The program or code segment can be stored in a machine-readable medium, or transmitted on a transmission medium or a communication link by a data signal carried in a carrier wave. "Machine-readable medium" can include any medium capable of storing or transmitting information. Examples of machine-readable media include electronic circuits, semiconductor memory devices, ROM, flash memory, erasable ROM (EROM), floppy disks, CD-ROMs, optical disks, hard disks, optical fiber media, radio frequency (RF) links, etc. The code segment can be downloaded via a computer network such as the Internet, an intranet, etc.

[0156] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps, that is, the steps can be performed in the order mentioned in the embodiment, or in a different order from the embodiment, or several steps can be performed simultaneously.

[0157] Aspects of the present disclosure are described above with reference to the flowchart and / or block diagram of the method, device (system) and computer program product according to the embodiment of the present disclosure. It should be understood that each box in the flowchart and / or block diagram and the combination of each box in the flowchart and / or block diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer, or other programmable data processing device to produce a machine so that these instructions executed by the processor of the computer or other programmable data processing device enable the implementation of the function / action specified in one or more boxes of the flowchart and / or block diagram. Such a processor can be, but is not limited to, a general-purpose processor, a special-purpose processor, a special application processor, or a field programmable logic circuit. It can also be understood that each box in the block diagram and / or flowchart and the combination of boxes in the block diagram and / or flowchart can also be implemented by dedicated hardware that performs a specified function or action, or can be implemented by a combination of dedicated hardware and computer instructions.

[0158] The above is only a specific implementation of the present application. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present application is not limited to this. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the protection scope of this application.

Claims

1. A method for repairing a defective layout, characterized in that: include: Acquire a first defect region and a second defect region in a mask design layout, wherein the first defect region includes the second defect region; Determining, according to the first defect region and the second defect region, a first repair evaluation value of the first defect region and a second repair evaluation value of the second defect region, wherein the first repair evaluation value is used to characterize a degree of pattern deviation of the first defect region caused by repairing the second defect region, and the second repair evaluation value is used to characterize a degree of pattern deviation of the second defect region caused by repairing the second defect region; According to the first repair evaluation value and the second repair evaluation value, the second defect area is moved to obtain a target defect map; The target defective layout in the mask design layout is repaired to obtain a repaired mask layout.

2. The method according to claim 1, characterized in that The obtaining of the first defect region and the second defect region in the mask design layout includes: Taking the defect point position in the mask design layout as the center, extending outward by a first preset size to obtain the first defect area; Taking the defect point position in the mask design layout as the center, a second preset size is extended outward to obtain the second defect area, and the second preset size is smaller than the first preset size.

3. The method according to claim 1, characterized in that: The determining, according to the first defect region and the second defect region, a first repair evaluation value of the first defect region and a second repair evaluation value of the second defect region comprises: Acquire a first evaluation point in the first defect area and a second evaluation point in the second defect area; Determine, according to the first defect region and the second defect region, a first offset value of each of the first evaluation points and a second offset value of each of the second evaluation points after simulation repair of the second defect region; The first restoration evaluation value is determined according to the first offset value of each of the first evaluation points, and the second restoration evaluation value is determined according to the second offset value of each of the second evaluation points.

4. The method according to claim 3, characterized in that The determining, according to the first defect region and the second defect region, a first offset value of each of the first evaluation points and a second offset value of each of the second evaluation points after simulation repair of the second defect region comprises: Performing simulation repair on the second defect area to obtain a first simulation repair area corresponding to the first defect area and a second simulation repair area corresponding to the second defect area; Compare the first defect area with the first simulation repair area to obtain a first offset value of each of the first evaluation points in the first defect area; The second defect area is compared with the second simulated repair area to obtain a second offset value of each of the second evaluation points in the second defect area.

5. The method according to claim 1, characterized in that The step of moving the second defect region according to the first repair evaluation value and the second repair evaluation value to obtain a target defect map includes: Moving the second defect area multiple times to obtain multiple candidate defect areas; For each of the candidate defect regions, respectively determine a first update and repair evaluation value and a second update and repair evaluation value corresponding to each of the candidate defect regions; The target defect layout in the mask design layout is determined according to the candidate defect area corresponding to the smallest first update and repair evaluation value and the smallest second update and repair evaluation value.

6. The method according to any one of claims 1 to 5, characterized in that: Before obtaining the first defective region and the second defective region in the mask design layout, the method further includes: Taking the defect point position in the mask design layout as the center, extending outward by a third preset size to obtain a defect background area; Segmenting a defect background layout corresponding to the defect background area from the mask design layout; The obtaining of the first defect region and the second defect region in the mask design layout includes: A first defect region and a second defect region in the defect background map are obtained.

7. The method according to claim 6, characterized in that The step of repairing the target defective layout in the mask design layout to obtain a repaired mask layout includes: Repairing the target defect pattern in the defect background pattern through an optical proximity effect to obtain a repaired defect background pattern; The repaired defect background layout is merged with the mask design layout to obtain the repaired mask layout.

8. The method according to any one of claims 1 to 5, characterized in that: After repairing the target defective layout in the mask design layout to obtain a repaired mask layout, the method further includes: Performing a lithography rule check on the repair mask pattern to obtain a rule check result; In the case where the rule checking result indicates that the repair mask layout complies with the preset photolithography rule, the repair mask layout is determined as the target mask layout for preparing the mask.

9. An electronic device, characterized in that: The device comprises: a processor and a memory storing computer program instructions; When the processor executes the computer program instructions, the method for repairing a defective layout as described in any one of claims 1 to 8 is implemented.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer program instructions, and when the computer program instructions are executed by a processor, the method for repairing a defective layout according to any one of claims 1 to 8 is implemented.

11. A computer program product, characterized in that When the instructions in the computer program product are executed by a processor of an electronic device, the electronic device executes the method for repairing a defective layout as described in any one of claims 1 to 8.

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