Gas temperature control device based on semiconductor element

Abstract

The invention belongs to the technical field of analytical chemistry instruments, in particular to a gas temperature control device based on a semiconductor element, which is characterized in that gas temperature control components are arranged at the upper and lower parts of a temperature sensing layer, and the gas temperature control components above the temperature sensing layer are sequentially stacked from top to bottom according to a water cooling circulation layer, a semiconductor chilling plate and a gas pipeline layer; the gas pipeline layer, the semiconductor chilling plate and the water cooling circulation layer of the gas temperature control assembly below the temperature sensing layer are sequentially stacked from top to bottom; liquid pipelines are arranged in the water-cooling circulation layers, and the liquid pipelines of the upper water-cooling circulation layer and the lower water-cooling circulation layer are communicated; gas channels are formed in the faces, facing the temperature sensing layer, of the gas pipeline layers, through holes B are formed in the temperature sensing layer, and the gas channels of the upper gas pipeline layer and the lower gas pipeline layer are communicated through the through holes B; and a temperature sensor for measuring the temperature of the whole device is inserted into the temperature sensing layer. The method is easy to operate, high in temperature regulation and control speed, high in control precision, wide in temperature control range and wide in application scene.

Description

Technical Field

[0001] The invention belongs to the technical field of analytical chemical instruments, in particular to a gas temperature control device based on semiconductor elements. Background Art

[0002] Negative ion generators are devices that improve air quality and the environment by releasing negative ions. Negative ions are negatively charged oxygen molecules that can neutralize positive ions in the air, which often come from electronic devices, car emissions and industrial pollution; by reducing the concentration of positive ions in the air, negative ion generators can effectively reduce the suspension of dust, pollen, smoke and other harmful substances, helping to freshen the air.

[0003] Negative ions do more than just purify the air. Studies have shown that negative ions can improve mood, relieve stress, and even improve sleep quality. This is because negative ions can affect neurotransmitters in the brain, thereby regulating mood and psychological state. In addition, negative ions are also believed to help enhance immune system function and improve the body's resistance.

[0004] The airflow temperature will have a certain impact on the negative ion generator. First, the increase in temperature will accelerate the movement of gas molecules, which may cause the ionization process to become unstable, thereby reducing the efficiency of negative ion generation. Secondly, higher temperatures may affect the material properties of the negative ion generator and increase the risk of aging. In addition, temperature will also affect the diffusion rate of negative ions and change their concentration distribution in the air. Therefore, maintaining a suitable airflow temperature is crucial to the performance of the negative ion generator. Summary of the invention

[0005] In order to meet the requirements of the negative ion generator on the air flow temperature, the object of the present invention is to provide a gas temperature control device based on semiconductor elements.

[0006] The objective of the present invention is achieved through the following technical solutions:

[0007] The present invention includes a gas temperature control component and a temperature-sensitive layer. Gas temperature control components are arranged above and below the temperature-sensitive layer. The gas temperature control component includes a water-cooling circulation layer, a semiconductor refrigeration sheet and a gas pipeline layer. The gas temperature control component above the temperature-sensitive layer is stacked in the order of the water-cooling circulation layer, the semiconductor refrigeration sheet and the gas pipeline layer from top to bottom. The gas temperature control component below the temperature-sensitive layer is stacked in the order of the gas pipeline layer, the semiconductor refrigeration sheet and the water-cooling circulation layer from top to bottom. The temperature-sensitive layer and the upper and lower gas temperature control components are in close contact; a liquid pipeline is arranged inside the water-cooling circulation layer, and the liquid pipelines of the water-cooling circulation layers in the upper and lower gas temperature control components are connected; a gas channel is arranged on the side of the gas pipeline layer facing the temperature-sensitive layer, a through hole B is opened on the temperature-sensitive layer, and the gas channels of the gas pipeline layers in the upper and lower gas temperature control components are connected through the through hole B; a temperature sensor for measuring the temperature of the entire device is inserted on the temperature-sensitive layer.

[0008] Wherein: two through holes A serving as a liquid inlet and a liquid outlet are provided on the water-cooling circulation layer, and the two through holes A are respectively connected to the two ends of the liquid pipeline arranged inside the water-cooling circulation layer; the through hole A serving as a liquid outlet on the water-cooling circulation layer in one of the gas temperature control components is connected to the through hole A serving as a liquid inlet on the water-cooling circulation layer in another of the gas temperature control components through a water pipe.

[0009] A through hole C is provided on the water-cooling circulation layer, and the through holes C on the water-cooling circulation layers in the upper and lower gas temperature control components are connected by studs and nuts, and the semiconductor refrigeration plates, gas pipeline layer and temperature sensing layer between the upper and lower water-cooling circulation layers are pressed and sealed.

[0010] The water-cooling circulation layer and the gas pipeline layer are both provided with grooves on one side facing the semiconductor refrigeration plate. The semiconductor refrigeration plate is accommodated in the grooves on the water-cooling circulation layer and the gas pipeline layer. The power connection end on the semiconductor refrigeration plate extends out from between the water-cooling circulation layer and the gas pipeline layer.

[0011] A sealing groove is arranged on the edge of the gas pipeline layer facing the temperature sensing layer, a sealing ring is arranged in the sealing groove, and the gas pipeline layer is sealed with the temperature sensing layer through the sealing ring; the gas channel on the gas pipeline layer is located inside the sealing groove.

[0012] The gas pipeline layer is provided with air holes, and the air holes are connected with the gas channel.

[0013] The gas channel is a structure in which multiple U-shaped grooves are connected in sequence. The air hole on one gas pipeline layer is connected to one end of the gas channel, and the other end of the gas channel is connected to one end of the gas channel on another gas pipeline layer through the through hole B on the temperature sensing layer, and the other end of the gas channel on another gas pipeline layer is connected to the air hole on another gas pipeline layer.

[0014] At least one through hole D is formed on the temperature sensing layer, and a temperature sensor is inserted into the through hole D.

[0015] The advantages and positive effects of the present invention are:

[0016] The present invention is simple to operate, has a fast temperature control speed, high control accuracy, and a wide temperature control range, and has a wide range of application scenarios. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 An exploded view of the present invention;

[0018] Figure 2 It is a schematic diagram of the overall structure of the present invention;

[0019] Figure 3 This is one of the structural schematic diagrams of the gas pipeline layer of the present invention;

[0020] Figure 4 This is the second structural schematic diagram of the gas pipeline layer of the present invention;

[0021] Among them: 1 is a water cooling circulation layer, 2 is a semiconductor chip, 3 is a gas pipeline layer, 4 is a temperature sensing layer, 5 is a temperature sensor, 6 is a nut, 7 is a through hole A, 8 is an air hole, 9 is a through hole B, 10 is a stud, 11 is a gas channel, 12 is a sealing groove, and 13 is a groove. DETAILED DESCRIPTION

[0022] The present invention will be further described below in conjunction with the accompanying drawings.

[0023] like Figure 1As shown, the gas temperature control component and the temperature sensing layer 4 of the present invention are provided with gas temperature control components above and below the temperature sensing layer 4, and the gas temperature control component includes a water-cooled circulation layer 1, a semiconductor refrigeration sheet 2 and a gas pipeline layer 3. The gas temperature control component above the temperature sensing layer 4 is stacked in the order of the water-cooled circulation layer 1, the semiconductor refrigeration sheet 2 and the gas pipeline layer 3 from top to bottom, and the gas temperature control component below the temperature sensing layer 4 is stacked in the order of the gas pipeline layer 3, the semiconductor refrigeration sheet 2 and the water-cooled circulation layer 1 from top to bottom, and the temperature sensing layer 4 and the upper and lower gas temperature control components are in close contact; a liquid pipeline is provided inside the water-cooled circulation layer 1, and the liquid pipelines of the water-cooled circulation layer 1 in the upper and lower gas temperature control components are connected; a gas channel 11 is provided on the side of the gas pipeline layer 3 facing the temperature sensing layer 4, a through hole B9 is opened on the temperature sensing layer 4, and the gas channels of the gas pipeline layer 3 in the upper and lower gas temperature control components are connected through the through hole B9; a temperature sensor 5 for measuring the temperature of the entire device is inserted on the temperature sensing layer 4.

[0024] The water-cooling circulation layer 1 is a rectangular or cube structure (the present embodiment is a rectangular structure), and two through holes A7 are provided on one side of the rectangular body, which serve as a liquid inlet and a liquid outlet respectively. The two through holes A7 are respectively connected to the two ends of the liquid pipeline provided inside the water-cooling circulation layer 1. The through hole A7 serving as the liquid outlet on the water-cooling circulation layer 1 in the upper gas temperature control assembly is connected to the through hole A7 serving as the liquid inlet on the water-cooling circulation layer 1 in the lower gas temperature control assembly through a water pipe; the water pipe is a silicone tube, a PU tube or a PVC tube. The circulating water enters from the through hole A7 serving as the liquid inlet on the upper water-cooling circulation layer 1, and the through hole A7 serving as the liquid outlet is connected to the through hole A7 serving as the liquid inlet on the lower water-cooling circulation layer 1 through a water pipe, and finally flows out from the through hole A7 serving as the liquid outlet; tap water or coolant can be used for the circulating water. In this embodiment, through holes C are opened at the four corners of the water-cooling circulation layer 1. The four groups of through holes C on the water-cooling circulation layer 1 in the upper and lower gas temperature control components are connected by a stud 10 and a nut 6 respectively. The threaded sections at both ends of the stud 10 pass through the through holes C and are then threadedly connected to the nut 6, thereby pressing the semiconductor refrigeration plate 2, the gas pipeline layer 3 and the temperature sensing layer 4 between the upper and lower water-cooling circulation layers 1 to ensure sealing.

[0025] The semiconductor cooling sheet 2 of this embodiment is a prior art, in the shape of a cuboid, and is composed of P-type and N-type semiconductor materials, which are connected by a direct current to form a loop. When the current passes through these materials, the cold end absorbs heat and the temperature drops, while the hot end releases heat and the temperature rises. By changing the direction of the current, the switching between cooling and heating can be achieved.

[0026] like Figures 1 to 4As shown, the gas pipeline layer 3 is a rectangular parallelepiped or cube structure (a rectangular parallelepiped structure in this embodiment), and the water-cooled circulation layer 1 and the gas pipeline layer 3 are provided with grooves 13 on one side facing the semiconductor refrigeration sheet 2. The semiconductor refrigeration sheet 2 is accommodated in the grooves 13 on the water-cooled circulation layer 1 and the gas pipeline layer 3, and the power connection end on the semiconductor refrigeration sheet 2 extends from between the water-cooled circulation layer 1 and the gas pipeline layer 3. A sealing groove 12 is provided on the edge of the side of the gas pipeline layer 3 facing the temperature-sensitive layer 4, and a sealing ring is placed in the sealing groove 12. The gas pipeline layer 3 is sealed with the temperature-sensitive layer 4 through the sealing ring to ensure the sealing with the temperature-sensitive layer 4. The gas channel 11 on the gas pipeline layer 3 is located inside the sealing groove 12 on the surface.

[0027] A pore 8 is provided on one side of the gas pipeline layer 3 of the present embodiment for ventilation of gas or outflow of gas, and the pore 8 is connected to the gas channel 11. The gas channel 11 of the present embodiment is a structure in which a plurality of U-shaped grooves are connected in sequence, and the depth of the gas channel 11 is 5 to 10 mm and the width is 5 to 10 mm. The pore 8 on the upper gas pipeline layer 3 is connected to one end of the gas channel 11 on the upper gas pipeline layer 3, and the other end of the gas channel 11 on the upper gas pipeline layer 3 is connected to one end of the gas channel 11 on the lower gas pipeline layer 3 through the through hole B9 on the temperature sensing layer 4, and the other end of the gas channel 11 on the lower gas pipeline layer 3 is connected to the pore 8 on the lower gas pipeline layer 3. The pores 8 on the upper and lower gas pipeline layers 3 of the present embodiment are respectively provided on both sides of the length direction.

[0028] The temperature sensing layer 4 is a rectangular parallelepiped or cube structure (a rectangular parallelepiped structure in this embodiment), and at least one through hole D is provided on the temperature sensing layer 4, and a temperature sensor 5 is inserted into the through hole D. In this embodiment, a through hole D is provided in the center of the temperature sensing layer 4, and one to two through holes D can be added as needed to increase the temperature sensing points. The temperature sensor 5 in this embodiment can be a thermocouple or PT100.

[0029] In this embodiment, the four corners of the gas pipeline layer 3 and the temperature sensing layer 4 are all arc surfaces, and the stud bolts 10 abut against the arc surfaces.

[0030] In order to ensure heat transfer, the gas pipeline layer 3, the water cooling circulation layer 1 and the temperature sensing layer 4 are made of metals with good thermal conductivity, such as copper, silver, etc.

[0031] Experimental example

[0032] A through hole B9 with a diameter of 6mm is opened at one corner of the temperature-sensing layer 4, connecting the gas channels 11 on the upper and lower gas pipeline layers 3. A through hole C with a diameter of 4mm is opened at each of the four corners of the water-cooling circulation layer 1, into which a stud 10 is inserted, and each layer is tightened with a nut 6 to ensure sealing. Two through holes A7 with a diameter of 4mm are opened on the side of the water-cooling circulation layer 1 for connecting water pipes. A gas channel 11 with a depth of 5mm and a width of 5mm is opened on the side of the gas pipeline layer 3 facing the temperature-sensing layer 4; a 4m air hole 8 is opened on the side of the gas pipeline layer 3 for the introduction or outflow of gas. PT100 is inserted into the central through hole D on the temperature-sensing layer 4 to measure the temperature of the entire device. The gas pipeline layer 3, the water-cooling circulation layer 1 and the temperature-sensing layer 4 are all made of copper.

[0033] When the low temperature is set, the semiconductor refrigeration plate 2 produces a cooling effect on the side close to the through hole B9, absorbs heat to reduce the temperature of the gas pipeline, and the heat released by the heating effect on the other side will be dissipated by the water-cooled circulation layer 1; when the high temperature is set, the current direction is switched, and the side close to the through hole B9 releases heat to increase the temperature of the gas pipeline, and the cooling effect on the other side will also be replenished with heat by the water-cooled circulation layer 1.

Claims

1. A gas temperature control device based on semiconductor elements, characterized in that: The invention comprises a gas temperature control component and a temperature sensing layer (4), wherein the gas temperature control component is arranged above and below the temperature sensing layer (4), wherein the gas temperature control component comprises a water cooling circulation layer (1), a semiconductor cooling sheet (2) and a gas pipeline layer (3), wherein the gas temperature control component above the temperature sensing layer (4) is stacked in the order of the water cooling circulation layer (1), the semiconductor cooling sheet (2) and the gas pipeline layer (3) from top to bottom, and the gas temperature control component below the temperature sensing layer (4) is stacked in the order of the gas pipeline layer (3), the semiconductor cooling sheet (2) and the water cooling circulation layer (1) from top to bottom. The temperature sensing layer (4) and the upper and lower gas temperature control components are in close contact; a liquid pipeline is provided inside the water cooling circulation layer (1), and the liquid pipelines of the water cooling circulation layer (1) in the upper and lower gas temperature control components are connected; a gas channel (11) is provided on the side of the gas pipeline layer (3) facing the temperature sensing layer (4), a through hole B (9) is opened on the temperature sensing layer (4), and the gas channels of the gas pipeline layer (3) in the upper and lower gas temperature control components are connected through the through hole B (9); a temperature sensor (5) for measuring the temperature of the entire device is inserted on the temperature sensing layer (4).

2. The gas temperature control device based on semiconductor elements according to claim 1, characterized in that: The water-cooling circulation layer (1) is provided with two through holes A (7) serving as a liquid inlet and a liquid outlet, and the two through holes A (7) are respectively connected to the two ends of a liquid pipeline arranged inside the water-cooling circulation layer (1); the through hole A (7) serving as a liquid outlet on the water-cooling circulation layer (1) in one of the gas temperature control components is connected to the through hole A (7) serving as a liquid inlet on the water-cooling circulation layer (1) in another of the gas temperature control components through a water pipe.

3. The gas temperature control device based on semiconductor elements according to claim 2, characterized in that: The water-cooling circulation layer (1) is provided with a through hole C, and the through holes C on the water-cooling circulation layers (1) in the upper and lower gas temperature control components are connected via studs (10) and nuts (6), and the semiconductor refrigeration plate (2), the gas pipeline layer (3) and the temperature sensing layer (4) between the upper and lower water-cooling circulation layers (1) are compressed and sealed.

4. The gas temperature control device based on semiconductor elements according to claim 1, characterized in that: The water-cooling circulation layer (1) and the gas pipeline layer (3) are both provided with a groove (13) on one side facing the semiconductor refrigeration plate (2); the semiconductor refrigeration plate (2) is accommodated in the groove (13) on the water-cooling circulation layer (1) and the gas pipeline layer (3); and the power connection end on the semiconductor refrigeration plate (2) extends from between the water-cooling circulation layer (1) and the gas pipeline layer (3).

5. The gas temperature control device based on semiconductor elements according to claim 1, characterized in that: A sealing groove (12) is provided on the edge of one side of the gas pipeline layer (3) facing the temperature sensing layer (4); a sealing ring is disposed in the sealing groove (12); the gas pipeline layer (3) is sealed with the temperature sensing layer (4) via the sealing ring; and the gas channel (11) on the gas pipeline layer (3) is located inside the sealing groove (12).

6. The gas temperature control device based on semiconductor elements according to claim 1, characterized in that: The gas pipeline layer (3) is provided with air holes (8), and the air holes (8) are connected to the gas channels (11).

7. The gas temperature control device based on semiconductor elements according to claim 6, characterized in that: The gas channel (11) is a structure in which a plurality of U-shaped grooves are connected in sequence; an air hole (8) on one of the gas pipeline layers (3) is connected to one end of the gas channel (11); the other end of the gas channel (11) is connected to one end of the gas channel (11) on another gas pipeline layer (3) through a through hole B (9) on the temperature sensing layer (4); and the other end of the gas channel (11) on another gas pipeline layer (3) is connected to the air hole (8) on another gas pipeline layer (3).

8. The gas temperature control device based on semiconductor elements according to claim 1, characterized in that: At least one through hole D is provided on the temperature sensing layer (4), and a temperature sensor (5) is inserted into the through hole D.

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