Crystal tray separation method

Abstract

The embodiment of the invention provides a crystal support separation method. The crystal support comprises a crystal support plate made of a metal material and a base plate capable of deforming after temperature change, the base plate is adhered to the crystal support plate, the crystal support separation method is used for separating the crystal support plate from the base plate, and the crystal support separation method comprises the following steps: transferring and overturning the crystal support to enable the base plate to be positioned above the crystal support plate; electromagnetically heating the crystal support to soften the glue between the base plate and the crystal support plate; separating the base plate from the crystal supporting plate; cleaning the glue on the separated crystal supporting plate; performing ultrasonic cleaning on the crystal supporting plate; and cooling the crystal supporting plate. The crystal tray separation method has the advantages of high separation efficiency, low energy consumption and low labor intensity.

Description

Technical Field

[0001] The present application relates to the technical field of silicon wafer processing, and in particular to a method for separating a wafer tray. Background Art

[0002] In the field of silicon wafer processing, silicon rods are processed into silicon wafers through slicers. The silicon rods are bonded to a pad (resin plate or plastic plate) with two-component glue, and the pad is bonded to a metal crystal support plate with two-component glue. After each silicon rod is processed, it will be debonded. During this process, the silicon wafer will be separated from the pad. Because the pad is processed during the cutting process, it will be directly scrapped. The crystal support plate needs to be further debonded and separated from the pad for reuse.

[0003] At present, the method for separating the pad and the crystal support plate is mainly a hot water bath method, which has low efficiency, high energy consumption, high labor intensity and waste of water resources. Therefore, how to improve the separation efficiency and reduce energy consumption is a technical problem that technicians in this field need to solve urgently. Summary of the invention

[0004] The present application provides a wafer tray separation method, which has high separation efficiency, low energy consumption and low labor intensity.

[0005] This application is achieved through the following technical solutions:

[0006] An embodiment of the present application provides a crystal tray separation method, wherein the crystal tray includes a crystal tray plate made of metal and a pad that can be deformed after temperature changes, the pad is bonded to the crystal tray plate, and the crystal tray separation method is used to separate the crystal tray plate from the pad, and the crystal tray separation method includes: transporting and flipping the crystal tray so that the pad is located above the crystal tray plate; electromagnetically heating the crystal tray to soften the glue between the pad and the crystal tray plate; separating the pad from the crystal tray plate; cleaning the glue on the separated crystal tray plate; ultrasonically cleaning the crystal tray plate; and cooling the crystal tray plate.

[0007] According to the crystal tray separation method of the embodiment of the present application, the crystal tray is flipped over so that the pad is located above the crystal tray, so that the subsequent workstation can perform separation operations on the crystal tray; electromagnetic heating of the crystal tray can soften the glue between the pad and the crystal tray, so that the pad and the crystal tray can be separated; after the crystal tray is heated, the difficulty of separation between the pad and the crystal tray is reduced due to the softening of the glue, and the pad and the crystal tray can be separated by applying a small force to the pad; after the pad and the crystal tray are separated, the glue on the crystal tray can be cleaned, so that the crystal tray can be reused; ultrasonic cleaning of the crystal tray can clean off the residual glue and stains on the crystal tray, and the cleaning effect is good; cooling the crystal tray can reduce the temperature of the crystal tray, so that the crystal tray can be reused. This crystal tray separation method has a good separation effect, high efficiency and low energy consumption.

[0008] According to some embodiments of the present application, ultrasonic cleaning of the crystal support plate includes: immersing the crystal support plate in an ultrasonic cleaning tank, and using ultrasonic cleaning to clean the residual glue and stains on the crystal support plate.

[0009] In the above scheme, the crystal support plate is immersed in an ultrasonic cleaning tank and cleaned by ultrasonic cleaning, which has high cleaning efficiency and good cleaning effect.

[0010] According to some embodiments of the present application, ultrasonic vibrations with a frequency of 25KHz to 35KHz are used to vibrate a cleaning medium in an ultrasonic cleaning tank to clean the crystal support plate.

[0011] In the above scheme, the cleaning medium in the ultrasonic cleaning tank is cleaned by ultrasonic vibration of the above frequency, and the cleaning effect of the crystal support plate is better.

[0012] According to some embodiments of the present application, an ultrasonic vibrator is disposed on at least one wall of the ultrasonic cleaning tank.

[0013] In the above scheme, an ultrasonic vibrator is arranged on at least one wall of the ultrasonic cleaning tank so as to transmit ultrasonic waves to the cleaning medium in the cleaning tank. The ultrasonic vibrator can be flexibly arranged according to the cleaning requirements.

[0014] According to some embodiments of the present application, cleaning the glue on the crystal support plate after separation includes: scraping the glue on the crystal support plate with a scraper, and cleaning the scraped glue with a glue cleaning roller brush.

[0015] In the above scheme, the glue on the crystal support plate is scraped with a scraper, so that at least most of the glue can be cleaned off, and the scraped glue is cleaned with a glue-cleaning roller brush, which has a good cleaning effect on the crystal support plate.

[0016] According to some embodiments of the present application, the scraper includes a first scraper and a second scraper, the first scraper cleans the glue on the upper surface of the crystal support plate, and the second scraper cleans the glue on the side surface of the crystal support plate.

[0017] In the above scheme, the first scraper cleans the glue on the upper surface of the crystal pallet, and the second scraper cleans the glue on the side surface of the crystal pallet. Cleaning the glue on the crystal pallet from multiple positions can effectively remove the glue attached to the crystal pallet and improve the cleaning effect of the crystal pallet.

[0018] According to some embodiments of the present application, electromagnetically heating the crystal tray to soften the glue between the pad and the crystal tray plate includes: heating the crystal tray by an electromagnetic heater, and reciprocating the electromagnetic heater in the conveying direction of the crystal tray to ensure uniform heating of the crystal tray.

[0019] In the above scheme, the crystal tray is heated by an electromagnetic heater and the electromagnetic heater is reciprocated in the crystal tray conveying direction, so that the crystal tray can be heated evenly, which is beneficial to soften the glue between the pad and the crystal tray, and facilitates separation of the pad and the crystal tray.

[0020] According to some embodiments of the present application, the softening and debonding temperature of the glue is lower than the heating temperature of the electromagnetic heater.

[0021] In the above scheme, the heating temperature of the electromagnetic heater is higher than the softening and degumming temperature of the glue, which facilitates the separation of the pad and the crystal support plate, and under the premise of being able to degumming, the heating temperature of the electromagnetic heater can be lower to reduce costs.

[0022] According to some embodiments of the present application, electromagnetically heating the crystal tray to soften the glue between the pad and the crystal tray plate further includes: before heating the crystal tray with the electromagnetic heater, cleaning the surface of the crystal tray with a roller brush.

[0023] In the above scheme, before the electromagnetic heater heats the crystal tray, the surface of the crystal tray is cleaned with a roller brush, so that impurities on the surface of the crystal tray can be removed, so as to facilitate uniform heating of the crystal tray and separation of the pad and the crystal tray.

[0024] According to some embodiments of the present application, cooling the crystal support plate includes: spraying cooling water through a spray head to rinse and cool the cleaned crystal support plate.

[0025] In the above scheme, cooling water is sprayed through a spray head to rinse and cool the cleaned crystal support plate, which improves the cleanliness of the crystal support plate on the one hand and facilitates the cooling of the crystal support plate on the other hand.

[0026] According to some embodiments of the present application, transporting and flipping the crystal tray so that the pad is located above the crystal tray includes: energizing an electromagnet to generate a magnetic force to adsorb the crystal tray, then transporting the crystal tray to a flipping mechanism through a transfer assembly, and flipping the crystal tray through the flipping mechanism so that the pad is located above the crystal tray.

[0027] In the above scheme, the crystal tray is magnetically attracted by an electromagnet, which has a simple structure and is convenient for picking up the crystal tray. After the crystal tray is processed by the previous process, the crystal tray is located above the pad. The crystal tray is flipped by a flipping mechanism, and the pad can be flipped to the top of the crystal tray, so as to separate the pad from the crystal tray.

[0028] According to some embodiments of the present application, the transfer assembly is configured to drive the pedestal to move in a height direction and / or a horizontal direction.

[0029] In the above solution, the transfer assembly can drive the crystal support plate to move in the height direction and / or the horizontal direction, so as to facilitate the transfer of the crystal support to the flipping mechanism, and the movement is stable.

[0030] According to some embodiments of the present application, separating the pad from the crystal support plate includes: fixing the crystal support plate by a crystal support pressing block, and then pushing the pad by a side push plate until the pad is separated from the crystal support plate.

[0031] In the above scheme, the crystal support plate is fixed by the crystal support pressing block to prevent the crystal support from moving with the pad when the side push plate pushes the pad, thereby facilitating the separation of the pad from the crystal support plate.

[0032] According to some embodiments of the present application, the crystal tray is transferred and flipped at the loading station, the crystal tray is electromagnetically heated at the heating station, the pad is separated from the crystal tray at the unloading station, the glue on the separated crystal tray is cleaned at the glue cleaning station, the crystal tray is ultrasonically cleaned at the cleaning station, the cleaned crystal tray is cooled at the cooling station, and the crystal tray is transferred between the stations through a conveyor line.

[0033] In the above scheme, the wafer trays are transported between the workstations through the conveyor line, which has a high degree of automation and high wafer tray separation efficiency.

[0034] Additional aspects and advantages of the present application will be given in part in the description below, and in part will become apparent from the description below, or will be learned through the practice of the present application. BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 A schematic flowchart of a wafer tray separation method provided in some embodiments of the present application;

[0037] Figure 2 A schematic diagram of the structure of an ultrasonic cleaning tank provided in some embodiments of the present application;

[0038] Figure 3 A schematic diagram of the structure of a scraper and a glue-cleaning roller brush provided in some embodiments of the present application;

[0039] Figure 4 A schematic diagram of the structure of a heating station provided in some embodiments of the present application;

[0040] Figure 5 A schematic diagram of the structure of a cooling station provided in some embodiments of the present application;

[0041] Figure 6 A schematic diagram of the structure of a loading station provided in some embodiments of the present application;

[0042] Figure 7 A schematic diagram of the structure of an unloading station provided for some embodiments of the present application.

[0043] Icons: 11-turning mechanism; 12-transfer assembly; 21-electromagnetic heater; 22-roller brush; 31-crystal support block; 32-side push plate; 33-waste collection box; 41-first scraper; 42-second scraper; 43-first glue cleaning roller brush; 44-second glue cleaning roller brush; 51-ultrasonic cleaning tank; 52-ultrasonic vibrator; 61-spray head; 700-first conveyor line; 81-crystal support plate; 811-upper surface; 812-side surface; 82-pad. DETAILED DESCRIPTION

[0044] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0045] Unless otherwise defined, all technical and scientific terms used in this application have the same meaning as those commonly understood by technicians in the technical field of this application; the terms used in the specification of this application are only for the purpose of describing specific embodiments and are not intended to limit this application; the terms "including" and "having" in the specification and claims of this application and the above-mentioned drawings and any variations thereof are intended to cover non-exclusive inclusions. The terms "first", "second", etc. in the specification and claims of this application or the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order or a primary and secondary relationship.

[0046] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It is explicitly and implicitly understood by those skilled in the art that the embodiments described in this application may be combined with other embodiments.

[0047] In the description of this application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "attached" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0048] The term "and / or" in this application is only a description of the association relationship of associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / " in this application generally indicates that the associated objects before and after are in an "or" relationship.

[0049] The term "multiple" as used in this application refers to more than two (including two). Similarly, "multiple groups" refers to more than two groups (including two groups), and "multiple sheets" refers to more than two sheets (including two sheets).

[0050] In the present application, the crystal support includes a crystal support plate made of metal and a pad that can be deformed after temperature changes, and the pad is bonded to the crystal support plate.

[0051] When the silicon wafer is separated from the wafer tray, the pad is located below the wafer tray for easy collection of the silicon wafer. After the silicon wafer is separated, the wafer tray needs to be separated, that is, the pad is separated from the wafer tray. The embodiment of the present application will introduce a wafer tray separation method.

[0052] The wafer tray separation method will be described below with reference to the accompanying drawings.

[0053] Please refer to Figure 1 , the embodiment of the present application provides a wafer tray separation method, the wafer tray separation method comprising:

[0054] S110, transferring and turning over the crystal support so that the pad is located above the crystal support plate;

[0055] S120, electromagnetically heating the crystal support to soften the glue between the pad and the crystal support;

[0056] S130, separating the backing plate from the crystal supporting plate;

[0057] S140, cleaning the glue on the separated crystal support plate;

[0058] S150, ultrasonic cleaning of the crystal support plate;

[0059] S160, cooling the crystal support plate.

[0060] Among them, during the crystal tray separation operation, the crystal tray passes through the loading station, heating station, unloading station, glue cleaning station, cleaning station and cooling station in sequence. At the loading station, perform step "S110, transfer and flip the crystal tray so that the pad is located above the crystal tray"; at the heating station, perform step "S120, electromagnetically heat the crystal tray to soften the glue between the pad and the crystal tray"; at the unloading station, perform step "S130, separate the pad from the crystal tray"; at the glue cleaning station, perform step "S140, clean the glue on the separated crystal tray"; at the cleaning station, perform step "S150, ultrasonically clean the crystal tray"; at the cooling station, perform step "S160, cool the crystal tray".

[0061] After the crystal tray is separated from the silicon wafer, the gasket is located under the crystal tray for easy stacking; since the crystal tray is made of metal, the weight of the crystal tray is greater than the weight of the pad. If the crystal tray is located above the pad, the crystal tray and the pad are not easy to separate when the pad is separated from the crystal tray. Therefore, when loading the crystal tray, the crystal tray needs to be turned over so that the pad is located above the crystal tray.

[0062] In step "S120, electromagnetically heating the crystal tray to soften the glue between the pad and the crystal tray plate", electromagnetic heating is used to heat the crystal tray quickly with low energy consumption.

[0063] According to the crystal tray separation method of the embodiment of the present application, the crystal tray is flipped over so that the pad is located above the crystal tray, so that the subsequent workstation can perform separation operations on the crystal tray; electromagnetic heating of the crystal tray can soften the glue between the pad and the crystal tray, so that the pad and the crystal tray can be separated; after the crystal tray is heated, the difficulty of separation between the pad and the crystal tray is reduced due to the softening of the glue, and the pad and the crystal tray can be separated by applying a small force to the pad; after the pad and the crystal tray are separated, the glue on the crystal tray can be cleaned, so that the crystal tray can be reused; ultrasonic cleaning of the crystal tray can clean off the residual glue and stains on the crystal tray, and the cleaning effect is good; cooling the crystal tray can reduce the temperature of the crystal tray, so that the crystal tray can be reused. This crystal tray separation method has a good separation effect, high efficiency and low energy consumption.

[0064] According to some embodiments of the present application, step “S150, ultrasonically cleaning the crystal support plate” includes: immersing the crystal support plate in an ultrasonic cleaning tank, and using ultrasonic cleaning to clean the residual glue and stains on the crystal support plate.

[0065] like Figure 2 As shown, an ultrasonic cleaning tank 51 is provided at the cleaning station. The ultrasonic cleaning tank 51 contains a cleaning medium. An ultrasonic generating device (such as an ultrasonic vibrator) transmits ultrasonic waves to the cleaning medium to clean the crystal support plate 81 .

[0066] In the above scheme, the crystal support plate 81 is immersed in the ultrasonic cleaning tank 51, and the crystal support plate 81 is cleaned by ultrasonic cleaning, which has high cleaning efficiency and good cleaning effect.

[0067] According to some embodiments of the present application, ultrasonic waves with a frequency of 25 KHz to 35 KHz are used to vibrate the cleaning medium in the ultrasonic cleaning tank 51 to clean the crystal support plate 81 .

[0068] By using an ultrasonic vibration cleaning medium with a frequency of 25KHz to 35KHz, the ultrasonic wave is transmitted to the crystal support plate 81 through the cleaning medium, so that the glue and stains on the crystal support plate 81 can be removed, thereby improving the cleaning effect of the crystal support plate 81.

[0069] In the above scheme, the cleaning medium in the ultrasonic cleaning tank is cleaned by ultrasonic vibration of the above frequency, and the cleaning effect of the crystal support plate 81 is better.

[0070] According to some embodiments of the present application, Figure 2 As shown, an ultrasonic vibrator 52 is provided on at least one wall of an ultrasonic cleaning tank 51 .

[0071] The ultrasonic vibrator 52 is disposed on at least one wall of the ultrasonic cleaning tank 51 to transmit the ultrasonic wave generated by the ultrasonic vibrator 52 to the cleaning medium in the ultrasonic cleaning tank 51. In some embodiments, the ultrasonic vibrator 52 can be disposed on one wall of the ultrasonic cleaning tank 51, such as the bottom wall or the side wall; or, the ultrasonic vibrator 52 can also be disposed on the bottom wall and the side wall of the ultrasonic cleaning tank 51, for example, the ultrasonic vibrator 52 can be disposed on the bottom wall and two opposite side walls of the ultrasonic cleaning tank 51, so that the cleaning medium has a good cleaning effect on the crystal support plate 81.

[0072] In the above solution, an ultrasonic vibrator 52 is provided on at least one wall of the ultrasonic cleaning tank 51 to transmit ultrasonic waves to the cleaning medium in the cleaning tank. The ultrasonic vibrator 52 can be flexibly provided according to cleaning requirements.

[0073] According to some embodiments of the present application, step “S140, cleaning the glue on the crystal support plate 81 after separation” includes: using a scraper to scrape the glue on the crystal support plate 81, and using a glue cleaning roller brush to clean the scraped glue.

[0074] When cleaning the glue on the crystal support plate 81 , you can first scrape the crystal support plate 81 with a scraper to separate the glue from the crystal support plate 81 , making it easier for the glue cleaning roller to clean the glue; then use the glue cleaning roller to scrape off the glue, which can effectively clean the glue on the crystal support plate 81 .

[0075] In the above scheme, the glue on the crystal support plate 81 is scraped with a scraper to remove at least most of the glue. The scraped glue is cleaned with a glue-cleaning roller brush, which has a good cleaning effect on the crystal support plate 81.

[0076] According to some embodiments of this application, please refer to Figure 3 The scraper includes a first scraper 41 and a second scraper 42 . The first scraper 41 cleans the glue on the upper surface of the crystal support plate 81 , and the second scraper 42 cleans the glue on the side surface of the crystal support plate 81 .

[0077] The upper surface 811 of the crystal support plate 81 refers to the crystal support plate 81 and the pad 82 (such as Figure 4 The side surface 812 of the crystal support plate 81 refers to the surface parallel to the conveying direction of the crystal support plate 81. When the length direction of the crystal support plate 81 is parallel to the conveying direction of the crystal support plate 81, the side surface 812 is the surface located at both ends of the width direction of the crystal support plate 81.

[0078] The first scraper 41 acts on the upper surface 811 of the crystal support plate 81. The first scraper 41 can cover the upper surface 811 of the crystal support plate 81 in the width direction of the crystal support plate 81, so that the first scraper 41 can clean the entire area of ​​the upper surface 811 of the crystal support plate 81 when moving along the length direction of the crystal support plate 81.

[0079] The second scraper 42 acts on the side surface 812 of the crystal support plate 81, and the second scraper 42 can be distributed on opposite sides of the crystal support plate 81 to act on the two opposite side surfaces 812 of the crystal support plate 81. The second scraper 42 can cover the side surface 812 of the crystal support plate 81 in the height direction of the crystal support plate 81, so that the second scraper 42 can clean the entire area of ​​the side surface 812 of the crystal support plate 81 when moving along the length direction of the crystal support plate 81.

[0080] In some embodiments, the glue cleaning roller brush includes a first glue cleaning roller brush 43 and a second glue cleaning roller brush 44. The first glue cleaning roller brush 43 acts on the upper surface 811 of the crystal support plate 81, and the second glue cleaning roller brush 44 acts on the side surface 812 of the crystal support plate 81. The first glue cleaning roller brush 43 is used to clean the glue scraped off by the first scraper 41, and the second glue cleaning roller brush 44 is used to clean the glue scraped off by the second scraper 42.

[0081] In the above scheme, the first scraper 41 cleans the glue on the upper surface 811 of the crystal support plate 81, and the second scraper 42 cleans the glue on the side surface 812 of the crystal support plate 81. The glue on the crystal support plate 81 is cleaned from multiple positions, which can effectively remove the glue attached to the crystal support plate 81 and improve the cleaning effect of the crystal support plate 81.

[0082] According to some embodiments of the present application, step "S120 electromagnetically heats the crystal tray to soften the glue between the pad 82 and the crystal tray plate 81" includes: heating the crystal tray by an electromagnetic heater, and reciprocating the electromagnetic heater in the conveying direction of the crystal tray to ensure uniform heating of the crystal tray.

[0083] Electromagnetic heater is a device that converts electrical energy into thermal energy using the principle of electromagnetic induction. By heating the wafer tray with an electromagnetic heater, electrical energy is converted into magnetic energy, which can achieve rapid heating of the wafer tray.

[0084] At the heating station, when the wafer tray is heated by the electromagnetic heater, the wafer tray is stationary, and the electromagnetic heater is reciprocated in the wafer tray conveying direction so that the wafer tray is heated evenly. In this case, the size of the electromagnetic heater does not need to be too large, which can save energy consumption and reduce costs.

[0085] In the above scheme, the crystal tray is heated by an electromagnetic heater and the electromagnetic heater is moved back and forth in the crystal tray conveying direction, so that the crystal tray can be heated evenly, which is beneficial to softening the glue between the pad 82 and the crystal tray 81 and facilitating separation of the pad 82 and the crystal tray 81.

[0086] According to some embodiments of the present application, the softening and debonding temperature of the glue is lower than the heating temperature of the electromagnetic heater.

[0087] According to the material of the glue, the softening and degumming temperature of the glue is determined, and the heating temperature of the electromagnetic heater is set according to the softening and degumming temperature of the glue. Under the premise of meeting the degumming requirements, the heating temperature of the electromagnetic heater can be lower to reduce energy consumption and reduce costs.

[0088] In the above solution, the heating temperature of the electromagnetic heater is higher than the softening and debonding temperature of the glue, which facilitates the separation of the pad 82 from the crystal support plate 81.

[0089] According to some embodiments of the present application, step “S120, electromagnetically heating the crystal tray to soften the glue between the pad 82 and the crystal tray plate 81” also includes: before heating the crystal tray with the electromagnetic heater, cleaning the surface of the crystal tray with a roller brush.

[0090] Please refer to Figure 4 In the heating station, a roller brush 22 and an electromagnetic heater 21 are provided. Along the conveying direction X of the crystal tray, the roller brush 22 is provided at the upstream section of the electromagnetic heater 21 .

[0091] In the above scheme, before the electromagnetic heater 21 heats the crystal tray, the roller brush 22 is used to clean the surface of the crystal tray, so as to remove impurities on the surface of the crystal tray, thereby facilitating uniform heating of the crystal tray and facilitating separation of the pad 82 from the crystal tray plate 81.

[0092] According to some embodiments of the present application, when the wafer tray is heated, water vapor generated by the heating of the wafer tray can also be collected to reduce the impact of the water vapor on the device.

[0093] According to some embodiments of the present application, step “S160, cooling the crystal support plate 81” includes: spraying cooling water through a spray head to rinse and cool the cleaned crystal support plate 81.

[0094] Please refer to Figure 5 A spray pipeline is provided at the cooling station, and a spray head 61 is provided at the end of the spray pipeline. Cooling water is sprayed through the spray head 61 to rinse the crystal support plate 81, which can remove debris on the surface of the crystal support plate 81, thereby improving the cleanliness of the crystal support plate 81; at the same time, since the temperature of the crystal support plate 81 is relatively high, when cooling water is sprayed on the crystal support plate 81, the temperature of the crystal support plate 81 can also be reduced, thereby achieving cooling of the crystal support plate 81.

[0095] After the crystal support plate 81 is sprayed, a drying step is provided to blow dry the water stains on the crystal support plate 81 .

[0096] In the above scheme, cooling water is sprayed by the spray head 61 to rinse and cool the cleaned crystal support plate 81 , which improves the cleanliness of the crystal support plate 81 on the one hand and facilitates the cooling of the crystal support plate 81 on the other hand.

[0097] According to some embodiments of the present application, step “S110, transporting and flipping the crystal tray so that the pad 82 is located above the crystal tray 81” includes: energizing the electromagnet to generate a magnetic force to adsorb the crystal tray 81, then transporting the crystal tray to the flipping mechanism through a transfer assembly, and flipping the crystal tray through the flipping mechanism so that the pad 82 is located above the crystal tray 81.

[0098] Since the crystal support plate 81 is made of metal, the crystal support plate 81 can be easily transferred by the electromagnet magnetically attracting the crystal support plate 81 .

[0099] Optionally, the electromagnet may be a power-off holding type electromagnet to reduce the risk of power-off failure.

[0100] Please refer to Figure 6 At the loading station, the flipping mechanism 11 is used to flip the crystal tray so that the pad 82 is located above the crystal tray plate 81, which has a high degree of automation and saves labor. For example, the flipping mechanism 11 can rotate the crystal tray 180° so that the crystal tray is flipped from a state where the pad 82 is at the bottom to a state where the pad 82 is at the top. After the crystal tray is flipped, the crystal tray falls onto the first conveyor line 700, so that the crystal tray is transported to the heating station through the first conveyor line 700.

[0101] The transfer assembly 12 is a assembly for transferring the wafer tray. The transfer assembly 12 may be a multi-axis manipulator capable of driving the wafer tray to move in multiple directions.

[0102] In the above scheme, the crystal support plate 81 is magnetically attracted by an electromagnet, and the structure is simple, which facilitates the picking up of the crystal support plate 81; after the crystal support plate is processed by the previous process, the crystal support plate 81 is located above the pad 82, and the crystal support plate is flipped by the flipping mechanism 11, so that the pad 82 can be flipped to the top of the crystal support plate 81, so as to separate the pad 82 from the crystal support plate 81.

[0103] According to some embodiments of the present application, the transfer assembly 12 is configured to drive the pedestal to move in a height direction and / or a horizontal direction.

[0104] In some embodiments, the transfer assembly 12 can drive the crystal tray to move in the height direction, or the transfer assembly 12 can drive the crystal tray to move in the horizontal direction, or the transfer assembly 12 can drive the crystal tray to move in the height direction and the horizontal direction, so as to transfer the crystal tray to the flip mechanism 11.

[0105] In the above solution, the transfer assembly 12 can drive the crystal tray 81 to move in the height direction and / or the horizontal direction, so as to transfer the crystal tray to the flip mechanism 11, and the movement is stable.

[0106] According to some embodiments of the present application, step “S130, separating the pad 82 from the crystal support plate 81” includes: fixing the crystal support plate 81 by a crystal support pressing block, and then pushing the pad 82 by a side push plate until the pad 82 is separated from the crystal support plate 81.

[0107] Please refer to Figure 7 The crystal support pressing block 31 is a component used to limit the crystal support plate 81. When the pad plate 82 is separated from the crystal support plate 81, the crystal support plate 81 is fixed by the crystal support pressing block 31, which can limit the movement of the crystal support plate 81, so that the side push plate 32 pushes the pad plate 82 to move relative to the crystal support plate 81, so that the pad plate 82 is separated from the crystal support plate 81.

[0108] When the side push plate 32 pushes the pad 82 to move, the pad 82 can be pushed in the horizontal direction to push the pad 82 away from the crystal support plate 81. Optionally, a side push plate 32 can be provided on one side of the crystal support conveying direction, and the side push plate 32 moves in a direction perpendicular to the crystal support conveying direction to push the pad 82 until the pad 82 is separated from the crystal support plate 81.

[0109] In some embodiments, a waste collection box 33 may be provided on a side opposite to the side push plate 32 to collect the backing plate 82 .

[0110] In the above solution, the crystal support plate 81 is fixed by the crystal support pressing block 31 to prevent the crystal support from following the pad 82 when the side push plate 32 pushes the pad 82 , thereby facilitating the separation of the pad 82 from the crystal support plate 81 .

[0111] According to some embodiments of the present application, the crystal tray is transferred and flipped at the loading station, the crystal tray is electromagnetically heated at the heating station, the pad 82 is separated from the crystal tray 81 at the unloading station, the glue on the separated crystal tray 81 is cleaned at the glue cleaning station, the crystal tray 81 is ultrasonically cleaned at the cleaning station, the cleaned crystal tray 81 is cooled at the cooling station, and the crystal tray is transferred between the stations through the conveyor line.

[0112] The two adjacent workstations are connected by a conveyor line to facilitate the transfer of the wafer tray and reduce manual handling.

[0113] In the above scheme, the wafer trays are transported between the workstations through the conveyor line, which has a high degree of automation and high wafer tray separation efficiency.

[0114] According to some embodiments of the present application, the present application provides a wafer tray separation method, the wafer tray separation method comprising:

[0115] The crystal support plate 81 is adsorbed by the magnetic force generated by the electromagnet being energized, and then the crystal support plate is transferred to the flip mechanism 11 by the transfer assembly 12, and the crystal support plate is flipped by the flip mechanism 11 so that the pad 82 is located above the crystal support plate 81;

[0116] The surface of the wafer tray is cleaned by a roller brush 22, and the wafer tray is heated by an electromagnetic heater 21, and the electromagnetic heater 21 is reciprocated in the conveying direction of the wafer tray to make the wafer tray heated evenly;

[0117] The crystal support plate 81 is fixed by the crystal support pressing block 31, and then the pad 82 is pushed by the side push plate 32 until the pad 82 is separated from the crystal support plate 81;

[0118] The glue on the upper surface 811 of the crystal support plate 81 is cleaned by the first scraper 41, and the glue on the side surface 812 of the crystal support plate 81 is cleaned by the second scraper 42, and then the scraped glue is cleaned by the glue cleaning roller brush;

[0119] Immerse the crystal support plate 81 in the ultrasonic cleaning tank 51 and use ultrasonic cleaning to clean the residual glue and stains on the crystal support plate 81;

[0120] The cooling water is sprayed through the spray head 61 to rinse and cool the crystal support plate 81 after ultrasonic cleaning.

[0121] Although the present application has been described with reference to preferred embodiments, various modifications may be made thereto and parts thereof may be replaced with equivalents without departing from the scope of the present application. In particular, the various technical features mentioned in the various embodiments may be combined in any manner as long as there are no structural conflicts. The present application is not limited to the specific embodiments disclosed herein, but includes all technical solutions falling within the scope of the claims.

Claims

1. A method for separating a wafer tray, wherein the wafer tray comprises a wafer tray plate made of metal and a pad that can be deformed after temperature changes, wherein the pad is bonded to the wafer tray plate, and the wafer tray separation method is used to separate the wafer tray plate from the pad, and is characterized in that: The wafer tray separation method comprises: Transferring and turning over the crystal support so that the pad is located above the crystal support plate; Electromagnetically heating the crystal support to soften the glue between the pad and the crystal support plate; Separating the backing plate from the crystal support plate; Cleaning the glue on the separated crystal support plate; Performing ultrasonic cleaning on the crystal support plate; The crystal support plate is cooled.

2. The method for separating the wafer tray according to claim 1, characterized in that: The ultrasonic cleaning of the crystal support plate includes: immersing the crystal support plate in an ultrasonic cleaning tank, and using ultrasonic cleaning to clean the residual glue and stains on the crystal support plate.

3. The method for separating the wafer tray according to claim 2, characterized in that: The cleaning medium in the ultrasonic cleaning tank is vibrated by ultrasonic waves with a frequency of 25KHz to 35KHz to clean the crystal support plate.

4. The method for separating the wafer tray according to claim 2, characterized in that: An ultrasonic vibrator is provided on at least one wall of the ultrasonic cleaning tank.

5. The method for separating the wafer tray according to claim 1, characterized in that: The cleaning of the glue on the separated crystal support plate comprises: scraping the glue on the crystal support plate with a scraper, and cleaning the scraped glue with a glue cleaning roller brush.

6. The method for separating the wafer tray according to claim 5, characterized in that: The scraper includes a first scraper and a second scraper, the first scraper cleans the glue on the upper surface of the crystal support plate, and the second scraper cleans the glue on the side surface of the crystal support plate.

7. The method for separating the wafer tray according to claim 1, characterized in that: The electromagnetic heating of the crystal tray to soften the glue between the pad and the crystal tray plate includes: heating the crystal tray by an electromagnetic heater, and reciprocatingly moving the electromagnetic heater in the crystal tray conveying direction to make the crystal tray evenly heated.

8. The method for separating the wafer tray according to claim 7, characterized in that: The softening and degumming temperature of the glue is lower than the heating temperature of the electromagnetic heater.

9. The method for separating the wafer tray according to claim 7, characterized in that: The electromagnetic heating of the wafer support to soften the glue between the pad and the wafer support plate further comprises: before the electromagnetic heater heats the wafer support, cleaning the surface of the wafer support with a roller brush.

10. The method for separating the wafer tray according to claim 1, characterized in that: The cooling of the crystal support plate includes: spraying cooling water through a spray head to rinse and cool the cleaned crystal support plate.

11. The method for separating the wafer tray according to claim 1, characterized in that: The transferring and flipping of the crystal tray so that the pad is located above the crystal tray includes: energizing an electromagnet to generate a magnetic force to adsorb the crystal tray, then transferring the crystal tray to a flipping mechanism through a transfer assembly, and flipping the crystal tray through the flipping mechanism so that the pad is located above the crystal tray.

12. The method for separating the wafer tray according to claim 11, characterized in that: The transfer assembly is configured to drive the pedestal to move in a height direction and / or a horizontal direction.

13. The method for separating the wafer tray according to claim 1, characterized in that: The separating of the pad from the crystal supporting plate comprises: fixing the crystal supporting plate by a crystal supporting pressing block, and then pushing the pad by a side pushing plate until the pad is separated from the crystal supporting plate.

14. The method for separating the wafer tray according to claim 1, characterized in that: The crystal tray is transferred and turned over at the loading station, electromagnetically heated at the heating station, separated from the pad at the unloading station, the glue on the separated crystal tray is cleaned at the glue cleaning station, ultrasonically cleaned at the cleaning station, and the cleaned crystal tray is cooled at the cooling station, and the crystal tray is transferred between the stations through the conveyor line.

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