Method and system for testing reliability of silicon carbide integrated circuit based on high-temperature environment

Abstract

The invention discloses a method and a system for testing the reliability of a silicon carbide integrated circuit based on a high-temperature environment. The method specifically comprises the following steps: step 1, constructing a multi-stress condition comprehensive test platform; 2, a test standard containing multiple stress conditions is formulated; 3, optimizing sample treatment and test fixture design, designing a proper test fixture according to the characteristics of the silicon carbide integrated circuit, and ensuring that the sample is not damaged or the performance of the sample is not reduced in the test process; the method comprises the following steps: constructing a multi-stress condition comprehensive test platform, formulating a test standard containing multi-stress conditions, optimizing sample treatment and test fixture design, improving test equipment precision and calibration frequency, and establishing a continuous monitoring and feedback mechanism. The reliability test level of the silicon carbide integrated circuit in a high-temperature environment is comprehensively improved, the accuracy and reliability of a test result are ensured, and a unified standard and powerful support are provided for reliability evaluation of the silicon carbide integrated circuit.

Description

Technical Field

[0001] The present invention belongs to the technical field of silicon carbide integrated circuit testing, and in particular relates to a silicon carbide integrated circuit reliability testing method and system based on a high temperature environment. Background Art

[0002] The role of reliability testing of silicon carbide integrated circuits is crucial. It is mainly used to evaluate the long-term stability and performance of silicon carbide integrated circuits under specific working environments. By simulating actual working conditions, such as high temperature, high pressure, high humidity and other extreme environments, long-term testing of silicon carbide integrated circuits can reveal their potential defects and failure modes. This test helps ensure that integrated circuits can continue to work stably in actual applications and avoid equipment failures due to performance degradation or failure. At the same time, reliability testing can also provide valuable feedback for the design, manufacturing and packaging of silicon carbide integrated circuits, helping to improve production processes and enhance product quality. Therefore, reliability testing of silicon carbide integrated circuits is a key link in ensuring product reliability, improving product competitiveness and extending product life.

[0003] Existing test standards tend to focus only on single or limited stress conditions, such as a single high temperature environment or a specific voltage condition, when evaluating the reliability of SiC integrated circuits in high temperature environments. However, in actual applications, SiC integrated circuits may need to work in more complex and changeable environments, which may simultaneously include multiple factors such as high temperature, high humidity, high voltage, and mechanical stress. Such complex environmental conditions may have a combined impact on the performance and reliability of SiC integrated circuits, and existing test standards often cannot fully cover these influencing factors. Therefore, even if SiC integrated circuits show good reliability under the test standards, performance degradation or failure may still occur in actual applications. Summary of the invention

[0004] The purpose of the present invention is to provide a silicon carbide integrated circuit reliability testing method and system based on a high temperature environment to solve the problem of the difference between the testing standard proposed in the above background technology and the actual application environment.

[0005] To achieve the above object, the present invention provides the following technical solution: a reliability testing method for silicon carbide integrated circuits based on a high temperature environment, specifically comprising the following steps:

[0006] Step 1: Build a comprehensive test platform for multiple stress conditions;

[0007] Step 2: Develop test standards that include multiple stress conditions;

[0008] Step 3: Optimize sample processing and test fixture design. Design a suitable test fixture based on the characteristics of silicon carbide integrated circuits to ensure that the samples will not be damaged or performance degraded during the test process;

[0009] Step 4: Improve the accuracy and calibration frequency of test equipment, introduce high-precision sensors and measuring instruments, such as high-precision resistors and capacitors, to improve the accuracy and reliability of test data; the sensor accuracy must meet the requirements of the test standards;

[0010] Step 5: Establish a continuous monitoring and feedback mechanism.

[0011] As a preferred technical solution in the present invention, the steps of the integrated test platform component in step 1 are as follows:

[0012] S1. Design a comprehensive test environment that can simulate multiple stress conditions such as high temperature (T), high humidity (RH), high voltage (V) and mechanical stress (σ);

[0013] S2, introduce temperature and humidity control system (accuracy ±0.5℃, ±3%RH), power supply (accuracy ±0.1%), and vibration table equipment to ensure the accuracy and stability of the simulated environment;

[0014] S3: Develop automated testing software based on platforms such as LabVIEW or MATLAB to achieve the combination and switching of multiple stress conditions to simulate the complex environment in actual applications.

[0015] As a preferred technical solution of the present invention, in S1, the environmental parameters can be expressed as:

[0016] T=T base +ΔT;

[0017] RH=RH base +ΔRH;

[0018] V=V base +ΔV;

[0019] σ=σ base +Δσ;

[0020] Among them, T base RH base 、V base , σ base are the reference environmental parameters, and ΔT, ΔRH, ΔV, and Δσ are the changes.

[0021] As a preferred technical solution in the present invention, the test standard specification method of step 2 is as follows:

[0022] Ⅰ. Based on the results of the comprehensive test platform, analyze the performance changes of SiC integrated circuits under different stress conditions, such as leakage current (Ileakage), breakdown voltage (VBD) and other parameters;

[0023] Ⅱ. Develop new test standards, covering a variety of stress conditions, and specify test methods, test time, and test indicators. For example, for high temperature testing, set the temperature range to 100°C to 300°C, the test time to 1000 hours, and the test indicator to be the leakage current change rate.

[0024] III. Introduce accelerated life test models (such as the Arrhenius model) to predict the life of SiC integrated circuits in practical applications.

[0025] As a preferred technical solution of the present invention, the model formula in step III is:

[0026]

[0027] Among them, k is the reaction rate constant, A is the pre-exponential factor, Ea is the activation energy, and T is the absolute temperature.

[0028] As a preferred technical solution of the present invention, the implementation steps of step 5 are as follows:

[0029] Collect and analyze performance data and failure cases of SiC integrated circuits in actual applications, such as failure rate and failure mode;

[0030] Based on actual application data, regularly evaluate the applicability and accuracy of test standards, and revise and improve test standards in a timely manner.

[0031] The present invention also discloses a silicon carbide integrated circuit reliability test system based on a high temperature environment, including a test method, the test system includes a main control terminal, and a

[0032] Comprehensive test bench, which is responsible for building a comprehensive test environment with multiple stress conditions, ensuring the accuracy and stability of the simulation environment, and realizing automated testing;

[0033] The standard formulation module is responsible for formulating and optimizing test standards that include multiple stress conditions, clarifying test methods, time and indicators, and introducing accelerated life test models for prediction;

[0034] Fixture design module, used to design appropriate test fixtures, optimize sample handling, ensure the accuracy and reliability of test results, and perform regular maintenance and calibration;

[0035] The calibration module is used to regularly calibrate and maintain the test equipment, introduce high-precision sensors, establish calibration and maintenance files, and ensure the accuracy and stability of the equipment;

[0036] The monitoring feedback module is responsible for collecting and analyzing actual application data, evaluating the applicability of test standards, establishing communication channels, and continuously improving test methods and techniques.

[0037] As a preferred technical solution in the present invention, the monitoring feedback module is also connected to the comprehensive test bench, standard setting module, fixture design module, calibration module, and monitoring feedback module. The data and opinions collected by the monitoring feedback are not only used to evaluate the applicability of the test standard, but also to guide the improvement and optimization of the comprehensive test bench, standard setting, fixture design, and equipment calibration, thereby continuously improving the overall performance and reliability of the test system.

[0038] Compared with the prior art, the present invention has the following beneficial effects:

[0039] By implementing a series of specific and formula-integrated steps such as building a comprehensive test platform for multiple stress conditions, formulating test standards that include multiple stress conditions, optimizing sample processing and test fixture design, improving test equipment accuracy and calibration frequency, and establishing a continuous monitoring and feedback mechanism, the reliability test level of silicon carbide integrated circuits in high-temperature environments can be comprehensively improved to ensure the accuracy and reliability of test results, provide unified standards and strong support for the reliability assessment of silicon carbide integrated circuits, reduce test errors and uncertainties, promptly discover and solve problems in actual applications, promote the continuous improvement of the overall performance and reliability level of silicon carbide integrated circuits, and lay a solid foundation for their widespread application and development in high-temperature environments. BRIEF DESCRIPTION OF THE DRAWINGS

[0040] Figure 1 It is a schematic diagram of the steps of the present invention;

[0041] Figure 2 It is a system diagram of the present invention. DETAILED DESCRIPTION

[0042] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0043] See also Figure 1 and Figure 2 The present invention provides a technical solution: a reliability testing method for silicon carbide integrated circuits based on a high temperature environment, specifically comprising the following steps:

[0044] Step 1: Build a comprehensive test platform for multiple stress conditions;

[0045] Step 2: Develop test standards that include multiple stress conditions;

[0046] Step 3: Optimize sample processing and test fixture design. Design a suitable test fixture based on the characteristics of silicon carbide integrated circuits to ensure that the samples will not be damaged or performance degraded during the test process;

[0047] Step 4: Improve the accuracy and calibration frequency of test equipment, introduce high-precision sensors and measuring instruments, such as high-precision resistors and capacitors, to improve the accuracy and reliability of test data; the sensor accuracy must meet the requirements of the test standards;

[0048] Step 5: Establish a continuous monitoring and feedback mechanism.

[0049] In this embodiment, the integrated test platform component steps of step one are as follows:

[0050] S1. Design a comprehensive test environment that can simulate multiple stress conditions such as high temperature (T), high humidity (RH), high voltage (V) and mechanical stress (σ);

[0051] S2, introduce temperature and humidity control system (accuracy ±0.5℃, ±3%RH), power supply (accuracy ±0.1%), and vibration table equipment to ensure the accuracy and stability of the simulated environment;

[0052] S3: Develop automated testing software based on platforms such as LabVIEW or MATLAB to achieve the combination and switching of multiple stress conditions to simulate the complex environment in actual applications.

[0053] In this embodiment, in S1, the environmental parameters can be expressed as:

[0054] T=T base +ΔT;

[0055] RH=RH base +ΔRH;

[0056] V=V base +ΔV;

[0057] σ=σ base +Δσ;

[0058] Among them, T base RH base 、V base , σ base are the reference environmental parameters, and ΔT, ΔRH, ΔV, and Δσ are the changes.

[0059] In this embodiment, the test standard specification method of step 2 is as follows:

[0060] Ⅰ. Based on the results of the comprehensive test platform, analyze the performance changes of SiC integrated circuits under different stress conditions, such as leakage current (Ileakage), breakdown voltage (VBD) and other parameters;

[0061] Ⅱ. Develop new test standards, covering a variety of stress conditions, and specify test methods, test time, and test indicators. For example, for high temperature testing, set the temperature range to 100°C to 300°C, the test time to 1000 hours, and the test indicator to be the leakage current change rate.

[0062] III. Introduce accelerated life test models (such as the Arrhenius model) to predict the life of SiC integrated circuits in practical applications.

[0063] In this embodiment, the model formula in step III is:

[0064]

[0065] Among them, k is the reaction rate constant, A is the pre-exponential factor, Ea is the activation energy, and T is the absolute temperature.

[0066] In this embodiment, the implementation steps of step five are as follows:

[0067] Collect and analyze performance data and failure cases of SiC integrated circuits in actual applications, such as failure rate and failure mode;

[0068] Based on actual application data, regularly evaluate the applicability and accuracy of test standards, and revise and improve test standards in a timely manner.

[0069] The present invention also discloses a silicon carbide integrated circuit reliability test system based on a high temperature environment, including a test method, the test system includes a main control terminal, and a

[0070] Comprehensive test bench, which is responsible for building a comprehensive test environment with multiple stress conditions, ensuring the accuracy and stability of the simulation environment, and realizing automated testing;

[0071] The standard formulation module is responsible for formulating and optimizing test standards that include multiple stress conditions, clarifying test methods, time and indicators, and introducing accelerated life test models for prediction;

[0072] Fixture design module, used to design appropriate test fixtures, optimize sample handling, ensure the accuracy and reliability of test results, and perform regular maintenance and calibration;

[0073] The calibration module is used to regularly calibrate and maintain the test equipment, introduce high-precision sensors, establish calibration and maintenance files, and ensure the accuracy and stability of the equipment;

[0074] The monitoring feedback module is responsible for collecting and analyzing actual application data, evaluating the applicability of test standards, establishing communication channels, and continuously improving test methods and techniques.

[0075] In this embodiment, the monitoring feedback module is also connected to the comprehensive test bench, standard setting module, fixture design module, calibration module, and monitoring feedback module. The data and opinions collected by the monitoring feedback are not only used to evaluate the applicability of the test standards, but also to guide the improvement and optimization of the comprehensive test bench, standard setting, fixture design, and equipment calibration, thereby continuously improving the overall performance and reliability of the test system.

[0076] Although embodiments of the present invention have been shown and described (see the above detailed description for details), it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to these embodiments without departing from the principles and spirit of the present invention, and the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A reliability test method for silicon carbide integrated circuits based on a high temperature environment, characterized in that: The specific steps include: Step 1: Build a comprehensive test platform for multiple stress conditions; Step 2: Develop test standards that include multiple stress conditions; Step 3: Optimize sample processing and test fixture design. Design a suitable test fixture based on the characteristics of silicon carbide integrated circuits to ensure that the samples will not be damaged or performance degraded during the test process; Step 4: Improve the accuracy and calibration frequency of test equipment, introduce high-precision sensors and measuring instruments, and improve the accuracy and reliability of test data; the sensor accuracy must meet the requirements of the test standards; Step 5: Establish a continuous monitoring and feedback mechanism.

2. The method for testing the reliability of silicon carbide integrated circuits in a high temperature environment according to claim 1, characterized in that: The steps of the integrated test platform component of step 1 are as follows: S1. Design a comprehensive test environment that can simulate multiple stress conditions such as high temperature (T), high humidity (RH), high voltage (V) and mechanical stress (σ); S2. Introduce temperature and humidity control system, power supply, and vibration table equipment to ensure the accuracy and stability of the simulation environment; S3: Develop automated testing software based on platforms such as LabVIEW or MATLAB to achieve the combination and switching of multiple stress conditions to simulate the complex environment in actual applications.

3. The method for testing the reliability of silicon carbide integrated circuits in a high temperature environment according to claim 2, characterized in that: In S1, the environmental parameters can be expressed as: T=T base +ΔT; RH=RH base +ΔRH; V=V base +ΔV; s = s base +Ds; Among them, T base RH base 、V base , σ base are the reference environmental parameters, and ΔT, ΔRH, ΔV, and Δσ are the changes.

4. The method for testing the reliability of silicon carbide integrated circuits in a high temperature environment according to claim 1, characterized in that: The test standard specification method of step 2 is as follows: Ⅰ. Based on the results of the comprehensive test platform, analyze the performance changes of SiC integrated circuits under different stress conditions; II. Develop new test standards that cover a variety of stress conditions and specify test methods, test time, and test indicators. III. Introduce an accelerated life test model to predict the life of SiC integrated circuits in practical applications.

5. The method for testing the reliability of silicon carbide integrated circuits in a high temperature environment according to claim 4, characterized in that: The model formula in step III is: Among them, k is the reaction rate constant, A is the pre-exponential factor, Ea is the activation energy, and T is the absolute temperature.

6. The method for testing the reliability of silicon carbide integrated circuits in a high temperature environment according to claim 1, characterized in that: The implementation steps of step five are as follows: Collect and analyze performance data and failure cases of silicon carbide integrated circuits in actual applications; Based on actual application data, regularly evaluate the applicability and accuracy of test standards, and revise and improve test standards in a timely manner.

7. A silicon carbide integrated circuit reliability testing system based on a high temperature environment, comprising the testing method according to any one of claims 1 to 6, characterized in that: The test system includes a main control terminal and a Comprehensive test bench, which is responsible for building a comprehensive test environment with multiple stress conditions, ensuring the accuracy and stability of the simulation environment, and realizing automated testing; The standard formulation module is responsible for formulating and optimizing test standards that include multiple stress conditions, clarifying test methods, time and indicators, and introducing accelerated life test models for prediction; Fixture design module, used to design appropriate test fixtures, optimize sample handling, ensure the accuracy and reliability of test results, and perform regular maintenance and calibration; The calibration module is used to regularly calibrate and maintain the test equipment, introduce high-precision sensors, establish calibration and maintenance files, and ensure the accuracy and stability of the equipment; The monitoring feedback module is responsible for collecting and analyzing actual application data, evaluating the applicability of test standards, establishing communication channels, and continuously improving test methods and techniques.

8. The silicon carbide integrated circuit reliability testing system based on a high temperature environment according to claim 7, characterized in that: The monitoring feedback module is also connected to the comprehensive test bench, the standard setting module, the fixture design module, the calibration module, and the monitoring feedback module.

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