High-performance intelligent infrared light switch and preparation method thereof

Abstract

The invention discloses a high-performance intelligent infrared light switch and a preparation method thereof, and belongs to the field of intelligent materials and optical thin films. The invention aims to solve the problems of low transmission tuning ratio and narrow regulation and control range of the existing infrared light switch. A high-performance intelligent infrared light switch sequentially comprises a first thermally induced phase change layer, an infrared high-transmittance dielectric layer, an infrared transparent substrate and a second thermally induced phase change layer from top to bottom. The preparation method comprises the following steps: 1, cleaning the substrate; 2, preparing an infrared high-transmittance dielectric layer; 3, preparing a front thermally induced phase change layer; and 4, preparing the back thermally induced phase change layer. The invention is used for the high-performance intelligent infrared light switch and the preparation thereof.

Description

Technical Field

[0001] The invention belongs to the field of smart materials and optical films. Background Art

[0002] Among vanadium oxides, vanadium dioxide (VO2) and vanadium pentoxide (V2O5) have the advantages of low phase change threshold and short response time. At the same time, they can adjust the optical performance adaptively with the change of external temperature, and have important application prospects in the field of infrared optical switches. The phase change temperatures of VO2 and V2O5 materials are around 68℃ and 257℃ respectively. The mechanism of their spectral intelligent regulation is: when the phase change does not occur at low temperature, the two materials have high transmittance in the infrared band and the detector works normally; when the temperature reaches above the phase change temperature, the two materials will undergo a transformation in crystal structure, showing low infrared transmittance, achieving the purpose of protecting internal optical components. Existing research has proved the feasibility of applying vanadium oxide thermoinduced phase change materials to infrared optical switches. Among them, Guan et al. designed and prepared an optical switch with a VO2 (60nm) / HfO2 / Si / HfO2 / VO2 (60nm) structure to obtain low-temperature and high-transmittance effect in the infrared detection band, achieving a low-temperature peak transmittance of -0.9dB, a single-wavelength transmission tuning ratio of 21.8dB, and a half-peak width greater than 3μm; in this study, VO2 was only used as a thermoinduced phase change layer, and HfO2 was used as a double-sided anti-reflection film to achieve anti-reflection of the Si substrate, which limited the high-temperature cutoff effect, and further led to the problems of low transmission tuning ratio and narrow regulation band range. Summary of the invention

[0003] The present invention aims to solve the problems of low transmission tuning ratio and narrow control range of existing infrared light switches, and further provide a high-performance intelligent infrared light switch and a preparation method thereof.

[0004] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0005] The first thermotropic phase change layer and the second thermotropic phase change layer are both VO2 thermotropic phase change layers or V2O5 thermotropic phase change layers.

[0006] A method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0007] 1. Cleaning the substrate:

[0008] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0009] 2. Preparation of infrared high-transmittance dielectric layer:

[0010] The high infrared transmittance dielectric layer is deposited on the surface of one side of the pre-treated substrate by using magnetron sputtering technology;

[0011] 3. Preparation of front thermoinduced phase change layer:

[0012] The first thermo-induced phase change layer is deposited on the surface of the infrared high-transmittance dielectric layer by using magnetron sputtering technology;

[0013] 4. Preparation of backside thermoinduced phase change layer:

[0014] The second thermotropic phase change layer is deposited on the other surface of the pretreated substrate by magnetron sputtering technology, thereby completing the preparation method of the high-performance intelligent infrared optical switch.

[0015] The beneficial effects of the present invention are:

[0016] The present invention realizes intelligent infrared light fast switch that can adaptively respond to temperature based on the phase change characteristics of thermotropic phase change materials (VO2 and V2O5). The optical characteristics of thermotropic phase change materials, such as high infrared transmittance at low temperatures and high infrared reflectance at high temperatures, are used to construct a structure of thermotropic phase change layer / infrared high transmittance medium layer / infrared transparent substrate / thermotropic phase change layer; a single-layer thickened thermotropic phase change layer (second thermotropic phase change layer) is used to achieve the dual effects of phase change function and infrared anti-reflection. The invented high-performance intelligent infrared light switch achieves low-temperature infrared high transmittance, single-wavelength high transmittance tuning ratio and wide-band control range, which is of great significance for infrared light switches to improve infrared detection effects and realize the control of specific wavelengths of light.

[0017] The high-performance intelligent infrared light switch described in the present invention has a low-temperature peak transmission wavelength of 3.5μm to 10μm, a low-temperature transmittance of 0.02dB to 3.00dB, a high-temperature transmittance of 32.29dB to 155.02dB, and a peak transmission tuning ratio of 32dB to 155dB under high and low temperature states. At the same time, it has a wide-band regulation effect in the 2.5μm to 15μm band, and the half-peak width is 8.5μm to 12.3μm, which is very suitable for intelligent protection of photoelectric sensors.

[0018] (1) The membrane structure is simpler, and each flat membrane layer is easy to process and prepare, and is easy to put into practical use.

[0019] (2) The single-layer thickened thermotropic phase change layer on the back of the substrate (the second thermotropic phase change layer) realizes the dual effects of phase change function and infrared transmittance enhancement, realizes the low-temperature infrared high transmittance of the infrared light switch and a higher single-wavelength transmission tuning ratio, and has a wide-band regulation effect.

[0020] The invention is used for a high-performance intelligent infrared light switch and a preparation method thereof. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1Schematic diagram of the structure of the first thermotropic phase change layer and the second thermotropic phase change layer in the high-performance intelligent infrared optical switch of the present invention when the materials are the same, 1 is an infrared transparent substrate, 2 is an infrared high-transmittance medium layer, 3 is the first thermotropic phase change layer, and 4 is the second thermotropic phase change layer;

[0022] Figure 2 Schematic diagram of the structure of the first thermotropic phase change layer and the second thermotropic phase change layer in the high-performance intelligent infrared optical switch of the present invention when the materials are different, 1 is an infrared transparent substrate, 2 is an infrared high-transmittance medium layer, 3 is the first thermotropic phase change layer, and 4 is the second thermotropic phase change layer;

[0023] Figure 3 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 1 at different temperatures;

[0024] Figure 4 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 4 at different temperatures;

[0025] Figure 5 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 8 at different temperatures;

[0026] Figure 6 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 10 at different temperatures. DETAILED DESCRIPTION

[0027] Specific implementation method 1: Combination Figure 1 and 2 Specifically describing this embodiment, this embodiment is a high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate, and a second thermotropic phase change layer;

[0028] The first thermotropic phase change layer and the second thermotropic phase change layer are both VO2 thermotropic phase change layers or V2O5 thermotropic phase change layers.

[0029] This specific implementation innovatively simplifies one side of the substrate into a single-layer thickened thermotropic phase change layer (VO2 or V2O5) - the second thermotropic phase change layer, and uses the high infrared transmittance of vanadium oxide at low temperatures as the back anti-reflection layer, which not only maintains high infrared transmittance at low temperatures, but also obtains a better high-temperature cutoff effect, thereby achieving a larger single-wavelength tuning ratio and a wider band control range. The subtlety of this design lies in: at low temperatures, this thickened phase change layer can be used as an infrared anti-reflection layer, especially the V2O5 phase change material with high infrared transmittance at low temperatures, which can work together with the front infrared high-transmittance dielectric layer to achieve a double-sided anti-reflection effect and improve the infrared transmittance of the substrate; at high temperatures, the phase change layers on both sides undergo phase changes, and because the phase change layer on the back of the substrate is thickened, the structure exhibits a lower infrared transmittance, thereby achieving a better infrared shielding effect.

[0030] The beneficial effects of this embodiment are:

[0031] This embodiment realizes intelligent infrared light fast switch that can respond adaptively to temperature based on the phase change characteristics of thermotropic phase change materials (VO2 and V2O5). The optical characteristics of thermotropic phase change materials, such as high infrared transmittance at low temperatures and high infrared reflectance at high temperatures, are used to construct a structure of thermotropic phase change layer / infrared high transmittance medium layer / infrared transparent substrate / thermotropic phase change layer; a single-layer thickened thermotropic phase change layer (second thermotropic phase change layer) is used to achieve the dual effects of phase change function and infrared anti-reflection. The invented high-performance intelligent infrared light switch achieves low-temperature infrared high transmittance, single-wavelength high transmittance tuning ratio, and wide-band control range, which is of great significance for infrared light switches to improve infrared detection effects and achieve control of specific wavelengths of light.

[0032] The high-performance intelligent infrared light switch described in this embodiment has a low-temperature peak transmission wavelength of 3.5μm to 10μm, a low-temperature transmittance of 0.02dB to 3.00dB, a high-temperature transmittance of 32.29dB to 155.02dB, and a peak transmission tuning ratio of 32dB to 155dB under high and low temperature conditions. At the same time, it has a wide-band regulation effect in the 2.5μm to 15μm band, and the half-peak width is 8.5μm to 12.3μm, which is very suitable for intelligent protection of photoelectric sensors.

[0033] (1) The membrane structure is simpler, and each flat membrane layer is easy to process and prepare, and is easy to put into practical use.

[0034] (2) The single-layer thickened thermotropic phase change layer on the back of the substrate (the second thermotropic phase change layer) realizes the dual effects of phase change function and infrared transmittance enhancement, realizes the low-temperature infrared high transmittance of the infrared light switch and a higher single-wavelength transmission tuning ratio, and has a wide-band regulation effect.

[0035] Specific implementation method 2: This implementation method is different from specific implementation method 1 in that the infrared transmission band of the infrared transparent substrate is 2 μm to 16 μm. The rest is the same as specific implementation method 1.

[0036] Specific implementation method 3: This implementation method is different from specific implementation method 1 or 2 in that the infrared transparent substrate is made of Si, Ge, ZnSe, ZnS, diamond or sapphire. Other aspects are the same as specific implementation method 1 or 2.

[0037] Specific embodiment 4: This embodiment differs from specific embodiments 1 to 3 in that the material of the infrared high-transmittance dielectric layer is ZrO2, HfO2, SiO2, TiO2, Al2O3 or V2O5. The rest is the same as specific embodiments 1 to 3.

[0038] Specific implementation example 5: This implementation example is different from specific implementation examples 1 to 4 in that the thickness of the infrared high-transmittance dielectric layer is 400 nm to 1400 nm. The rest is the same as specific implementation examples 1 to 4.

[0039] Specific implementation example 6: This implementation example is different from specific implementation examples 1 to 5 in that the thickness of the infrared high-transmittance dielectric layer is 400 nm to 1400 nm. The rest is the same as specific implementation examples 1 to 5.

[0040] Specific embodiment 7: This embodiment differs from specific embodiments 1 to 6 in that: when the second thermotropic phase change layer is a VO2 thermotropic phase change layer, the thickness of the second thermotropic phase change layer is 400nm to 1000nm; when the second thermotropic phase change layer is a V2O5 thermotropic phase change layer, the thickness of the second thermotropic phase change layer is 500nm to 1400nm. Other aspects are the same as specific embodiments 1 to 6.

[0041] Specific implementation method eight: This implementation method is a method for preparing a high-performance intelligent infrared light switch, which is carried out according to the following steps:

[0042] 1. Cleaning the substrate:

[0043] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0044] 2. Preparation of infrared high-transmittance dielectric layer:

[0045] The high infrared transmittance dielectric layer is deposited on the surface of one side of the pre-treated substrate by using magnetron sputtering technology;

[0046] 3. Preparation of front thermoinduced phase change layer:

[0047] The first thermo-induced phase change layer is deposited on the surface of the infrared high-transmittance dielectric layer by using magnetron sputtering technology;

[0048] 4. Preparation of backside thermoinduced phase change layer:

[0049] The second thermotropic phase change layer is deposited on the other surface of the pretreated substrate by magnetron sputtering technology, thereby completing the preparation method of the high-performance intelligent infrared optical switch.

[0050] Specific embodiment 9: This embodiment is different from specific embodiment 8 in that: when the first thermotropic phase change layer prepared in step 3 is a VO2 thermotropic phase change layer, or the second thermotropic phase change layer prepared in step 4 is a VO2 thermotropic phase change layer, the following steps are specifically performed: high-power pulsed magnetron sputtering technology is used, and high-power pulsed magnetron sputtering is performed under the conditions of power of 100W to 200W, flow ratio of argon to oxygen of 80sccm: (1.2sccm to 2.0sccm) and temperature of 500°C to 600°C. Others are the same as specific embodiment 8.

[0051] Specific embodiment 10: This embodiment is different from specific embodiment 8 or 9 in that: when the material of the infrared high-transmittance dielectric layer prepared in step 2 is V2O5, or the first thermotropic phase change layer prepared in step 3 is a V2O5 thermotropic phase change layer, or the second thermotropic phase change layer prepared in step 4 is a V2O5 thermotropic phase change layer, the following steps are specifically performed: high-power pulsed magnetron sputtering technology is used, and high-power pulsed magnetron sputtering is performed under the conditions of power of 100W to 200W, flow ratio of argon to oxygen of 20sccm: (1.6sccm to 2.6sccm) and temperature of 300°C to 550°C. Others are the same as specific embodiment 8 or 9.

[0052] The following examples are used to verify the beneficial effects of the present invention:

[0053] Embodiment 1:

[0054] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0055] The first thermotropic phase change layer is a VO2 thermotropic phase change layer; the second thermotropic phase change layer is a VO2 thermotropic phase change layer.

[0056] The infrared transparent substrate is made of Si.

[0057] The material of the infrared high-transmittance medium layer is ZrO2.

[0058] The thickness of the infrared high-transmittance medium layer is 500nm.

[0059] The thickness of the first thermotropic phase change layer is 20 nm; the thickness of the second thermotropic phase change layer is 500 nm.

[0060] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0061] 1. Cleaning the substrate:

[0062] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0063] 2. Preparation of infrared high-transmittance dielectric layer:

[0064] Using direct current magnetron sputtering technology, at a power of 100 W, a flow ratio of argon to oxygen of 80 sccm:3.0 sccm and room temperature, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0065] 3. Preparation of front thermoinduced phase change layer:

[0066] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 100W, flow ratio of argon to oxygen of 80sccm:2.0sccm and temperature of 500°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0067] 4. Preparation of backside thermoinduced phase change layer:

[0068] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 100 W, flow ratio of argon to oxygen of 80 sccm:2.0 sccm and temperature of 500°C, a second thermotropic phase change layer is deposited on the other side of the pretreated substrate, thereby completing the preparation method of a high-performance intelligent infrared optical switch.

[0069] The infrared transmission spectrum test of the high-performance intelligent infrared optical switch prepared in Example 1 was carried out, the test wavelength range was 2.5μm to 15μm, the test high and low temperatures were 30℃ and 80℃, and the 30℃ low temperature peak transmission wavelength was 5μm. At a wavelength of 5μm, the corresponding 30℃ transmittance was 2.65dB, the 80℃ transmittance was 42.73dB, the transmission tuning ratio was 40.08dB, and the half-peak width was 12.1μm. Figure 3 As shown, Figure 3 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 1 at different temperatures.

[0070] Embodiment 2:

[0071] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0072] The first thermotropic phase change layer is a VO2 thermotropic phase change layer; the second thermotropic phase change layer is a VO2 thermotropic phase change layer.

[0073] The infrared transparent substrate is made of Si.

[0074] The material of the infrared high-transmittance medium layer is HfO2.

[0075] The thickness of the infrared high-transmittance medium layer is 1000nm.

[0076] The thickness of the first thermotropic phase change layer is 100 nm; the thickness of the second thermotropic phase change layer is 1000 nm.

[0077] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0078] 1. Cleaning the substrate:

[0079] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0080] 2. Preparation of infrared high-transmittance dielectric layer:

[0081] Using direct current magnetron sputtering technology, under the conditions of power of 250W, flow ratio of argon to oxygen of 80sccm:4.0sccm and temperature of 200°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0082] 3. Preparation of front thermoinduced phase change layer:

[0083] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 150W, flow ratio of argon to oxygen of 80sccm:1.8sccm and temperature of 550°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0084] 4. Preparation of backside thermoinduced phase change layer:

[0085] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 150W, flow ratio of argon to oxygen of 80sccm:1.8sccm and temperature of 550℃, a second thermoinduced phase change layer is deposited on the other surface of the pretreated substrate, thus completing the preparation method of high-performance intelligent infrared optical switch.

[0086] The high-performance intelligent infrared optical switch prepared in Example 2 was subjected to an infrared transmittance spectrum test, with a test wavelength range of 2.5 μm to 15 μm, and a test high and low temperature of 30°C and 80°C. The result showed that its 30°C low-temperature peak transmission wavelength was 8.8 μm. At a wavelength of 8.8 μm, the corresponding 30°C transmittance was 3 dB, the 80°C transmittance was 55.28 dB, the transmission tuning ratio was 52.28 dB, and the half-peak width was 9 μm.

[0087] Embodiment three:

[0088] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0089] The first thermotropic phase change layer is a VO2 thermotropic phase change layer; the second thermotropic phase change layer is a VO2 thermotropic phase change layer.

[0090] The infrared transparent substrate is made of Ge.

[0091] The material of the infrared high-transmittance medium layer is SiO2.

[0092] The thickness of the infrared high-transmittance medium layer is 1000nm.

[0093] The thickness of the first thermotropic phase change layer is 30 nm; the thickness of the second thermotropic phase change layer is 400 nm.

[0094] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0095] 1. Cleaning the substrate:

[0096] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0097] 2. Preparation of infrared high-transmittance dielectric layer:

[0098] Using direct current magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:4.5sccm and temperature of 300°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0099] 3. Preparation of front thermoinduced phase change layer:

[0100] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:1.6sccm and temperature of 600°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0101] 4. Preparation of backside thermoinduced phase change layer:

[0102] Using high-power pulsed magnetron sputtering technology, under the conditions of a power of 200 W, a flow ratio of argon to oxygen of 80 sccm:1.6 sccm and a temperature of 600°C, a second thermotropic phase change layer is deposited on the other side of the pretreated substrate, thereby completing the preparation method of a high-performance intelligent infrared optical switch.

[0103] The high-performance intelligent infrared optical switch prepared in Example 3 was subjected to an infrared transmittance spectrum test, with a test wavelength range of 2.5 μm to 15 μm, and a test high and low temperature of 30°C and 80°C. The result showed that its 30°C low-temperature peak transmission wavelength was 6 μm. At a wavelength of 6 μm, the corresponding 30°C transmittance was 2.63 dB, the 80°C transmittance was 37.48 dB, the transmission tuning ratio was 34.85 dB, and the half-peak width was 12.2 μm.

[0104] Embodiment 4:

[0105] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0106] The first thermotropic phase change layer is a VO2 thermotropic phase change layer; the second thermotropic phase change layer is a V2O5 thermotropic phase change layer.

[0107] The infrared transparent substrate is made of ZnSe.

[0108] The material of the infrared high-transmittance medium layer is HfO2.

[0109] The thickness of the infrared high-transmittance medium layer is 600nm.

[0110] The thickness of the first thermotropic phase change layer is 30 nm; the thickness of the second thermotropic phase change layer is 600 nm.

[0111] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0112] 1. Cleaning the substrate:

[0113] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0114] 2. Preparation of infrared high-transmittance dielectric layer:

[0115] Using direct current magnetron sputtering technology, under the conditions of power of 250W, flow ratio of argon to oxygen of 80sccm:4.0sccm and temperature of 200°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0116] 3. Preparation of front thermoinduced phase change layer:

[0117] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:1.2sccm and temperature of 550°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0118] 4. Preparation of backside thermoinduced phase change layer:

[0119] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 100 W, flow ratio of argon to oxygen of 20 sccm:2.6 sccm and temperature of 300°C, a second thermotropic phase change layer is deposited on the other surface of the pretreated substrate, thereby completing the preparation method of a high-performance intelligent infrared optical switch.

[0120] The infrared transmission spectrum test of the high-performance intelligent infrared optical switch prepared in Example 4 was carried out, the test wavelength range was 2.5μm to 15μm, the test high and low temperatures were 30°C and 300°C, and the 30°C low temperature peak transmission wavelength was 5μm. At a wavelength of 5μm, the corresponding 30°C transmittance was 0.29dB, the 300°C transmittance was 32.29dB, the transmission tuning ratio was 32dB, and the half-peak width was 8.5μm. Figure 4 As shown, Figure 4 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 4 at different temperatures.

[0121] Embodiment five:

[0122] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0123] The first thermotropic phase change layer is a VO2 thermotropic phase change layer; the second thermotropic phase change layer is a V2O5 thermotropic phase change layer.

[0124] The infrared transparent substrate is made of ZnS.

[0125] The material of the infrared high-transmittance medium layer is TiO2.

[0126] The thickness of the infrared high-transmittance medium layer is 800nm.

[0127] The thickness of the first thermotropic phase change layer is 50 nm; the thickness of the second thermotropic phase change layer is 800 nm.

[0128] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0129] 1. Cleaning the substrate:

[0130] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0131] 2. Preparation of infrared high-transmittance dielectric layer:

[0132] Using direct current magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:5.0sccm and temperature of 400°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0133] 3. Preparation of front thermoinduced phase change layer:

[0134] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:1.8sccm and temperature of 550°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0135] 4. Preparation of backside thermoinduced phase change layer:

[0136] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 150W, flow ratio of argon to oxygen of 20sccm:2.4sccm and temperature of 350°C, a second thermotropic phase change layer is deposited on the other surface of the pretreated substrate, thus completing the preparation method of a high-performance intelligent infrared optical switch.

[0137] The high-performance intelligent infrared optical switch prepared in Example 5 was subjected to an infrared transmittance spectrum test, with a test wavelength range of 2.5 μm to 15 μm, and a test high and low temperature of 30°C and 300°C. The result showed that its 30°C low-temperature peak transmission wavelength was 6.4 μm. At a wavelength of 6.4 μm, the corresponding 30°C transmittance was 0.42 dB, the 300°C transmittance was 34.80 dB, the transmission tuning ratio was 34.38 dB, and the half-peak width was 10.5 μm.

[0138] Embodiment six:

[0139] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0140] The first thermotropic phase change layer is a VO2 thermotropic phase change layer; the second thermotropic phase change layer is a V2O5 thermotropic phase change layer.

[0141] The infrared transparent substrate is made of diamond.

[0142] The material of the infrared high-transmittance medium layer is Al2O3.

[0143] The thickness of the infrared high-transmittance medium layer is 1000nm.

[0144] The thickness of the first thermotropic phase change layer is 100 nm; the thickness of the second thermotropic phase change layer is 1000 nm.

[0145] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0146] 1. Cleaning the substrate:

[0147] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0148] 2. Preparation of infrared high-transmittance dielectric layer:

[0149] Using direct current magnetron sputtering technology, under the conditions of power of 150W, flow ratio of argon to oxygen of 80sccm:4.5sccm and temperature of 400°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0150] 3. Preparation of front thermoinduced phase change layer:

[0151] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:1.8sccm and temperature of 550°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0152] 4. Preparation of backside thermoinduced phase change layer:

[0153] Using high-power pulsed magnetron sputtering technology, under the conditions of a power of 200 W, a flow ratio of argon to oxygen of 20 sccm:2.2 sccm and a temperature of 400°C, a second thermoinduced phase change layer is deposited on the other surface of the pretreated substrate, thereby completing the preparation method of a high-performance intelligent infrared optical switch.

[0154] The high-performance intelligent infrared light switch prepared in Example 6 was subjected to an infrared transmittance spectrum test, with a test wavelength range of 2.5 μm to 15 μm and a test high and low temperature of 30°C and 300°C. The 30°C low-temperature peak transmission wavelength was 8 μm. At a wavelength of 8 μm, the corresponding 30°C transmittance was 0.69 dB, the 300°C transmittance was 38.22 dB, the transmission tuning ratio was 37.53 dB, and the half-peak width was 12 μm.

[0155] Embodiment seven:

[0156] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0157] The first thermotropic phase change layer is a VO2 thermotropic phase change layer; the second thermotropic phase change layer is a V2O5 thermotropic phase change layer.

[0158] The infrared transparent substrate is made of sapphire.

[0159] The material of the infrared high-transmittance medium layer is HfO2.

[0160] The thickness of the infrared high-transmittance medium layer is 1400nm.

[0161] The thickness of the first thermotropic phase change layer is 100 nm; the thickness of the second thermotropic phase change layer is 1400 nm.

[0162] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0163] 1. Cleaning the substrate:

[0164] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0165] 2. Preparation of infrared high-transmittance dielectric layer:

[0166] Using direct current magnetron sputtering technology, under the conditions of power of 250W, flow ratio of argon to oxygen of 80sccm:4.0sccm and temperature of 200°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0167] 3. Preparation of front thermoinduced phase change layer:

[0168] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:1.8sccm and temperature of 550°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0169] 4. Preparation of backside thermoinduced phase change layer:

[0170] Using high-power pulsed magnetron sputtering technology, under the conditions of a power of 200 W, a flow ratio of argon to oxygen of 20 sccm:2.2 sccm and a temperature of 400°C, a second thermoinduced phase change layer is deposited on the other surface of the pretreated substrate, thereby completing the preparation method of a high-performance intelligent infrared optical switch.

[0171] The high-performance intelligent infrared optical switch prepared in Example 7 was subjected to an infrared transmittance spectrum test, with a test wavelength range of 2.5 μm to 15 μm, and a test high and low temperature of 30°C and 300°C. The result showed that its 30°C low-temperature peak transmission wavelength was 10 μm. At a wavelength of 10 μm, the corresponding 30°C transmittance was 0.94 dB, the 300°C transmittance was 40.8 dB, the transmission tuning ratio was 39.86 dB, and the half-peak width was 12 μm.

[0172] Embodiment eight:

[0173] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0174] The first thermotropic phase change layer is a V2O5 thermotropic phase change layer; the second thermotropic phase change layer is a V2O5 thermotropic phase change layer.

[0175] The infrared transparent substrate is made of Si.

[0176] The material of the infrared high-transmittance medium layer is HfO2.

[0177] The thickness of the infrared high-transmittance medium layer is 1400nm.

[0178] The thickness of the first thermotropic phase change layer is 50 nm; the thickness of the second thermotropic phase change layer is 1400 nm.

[0179] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0180] 1. Cleaning the substrate:

[0181] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0182] 2. Preparation of infrared high-transmittance dielectric layer:

[0183] Using direct current magnetron sputtering technology, under the conditions of power of 250W, flow ratio of argon to oxygen of 80sccm:4.0sccm and temperature of 200°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0184] 3. Preparation of front thermoinduced phase change layer:

[0185] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:1.6sccm and temperature of 400°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0186] 4. Preparation of backside thermoinduced phase change layer:

[0187] Using high-power pulsed magnetron sputtering technology, under the conditions of a power of 200 W, a flow ratio of argon to oxygen of 20 sccm:2.0 sccm and a temperature of 400°C, a second thermotropic phase change layer is deposited on the other surface of the pretreated substrate, thereby completing the preparation method of a high-performance intelligent infrared optical switch.

[0188] The high-performance intelligent infrared optical switch prepared in Example 8 was subjected to an infrared transmission spectrum test. The test wavelength range was 2.5 μm to 15 μm. The test high and low temperatures were 200°C and 300°C. The low-temperature peak transmission wavelength at 200°C was 3.6 μm. At a wavelength of 3.6 μm, the corresponding transmittance at 200°C was 0.07 dB, the transmittance at 300°C was 85.51 dB, the transmission tuning ratio was 85.44 dB, and the half-peak width was 12.3 μm. Figure 5 As shown, Figure 5 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 8 at different temperatures.

[0189] Embodiment nine:

[0190] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0191] The first thermotropic phase change layer is a V2O5 thermotropic phase change layer; the second thermotropic phase change layer is a V2O5 thermotropic phase change layer.

[0192] The infrared transparent substrate is made of Si.

[0193] The material of the infrared high-transmittance medium layer is HfO2.

[0194] The thickness of the infrared high-transmittance medium layer is 800nm.

[0195] The thickness of the first thermotropic phase change layer is 200 nm; the thickness of the second thermotropic phase change layer is 800 nm.

[0196] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0197] 1. Cleaning the substrate:

[0198] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0199] 2. Preparation of infrared high-transmittance dielectric layer:

[0200] Using direct current magnetron sputtering technology, under the conditions of power of 250W, flow ratio of argon to oxygen of 80sccm:4.0sccm and temperature of 200°C, an infrared high-transmittance dielectric layer was deposited on the surface of one side of the pretreated substrate;

[0201] 3. Preparation of front thermoinduced phase change layer:

[0202] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 80sccm:1.8sccm and temperature of 500°C, a first thermally induced phase change layer was deposited on the surface of the infrared high-transmittance dielectric layer;

[0203] 4. Preparation of backside thermoinduced phase change layer:

[0204] Using high-power pulsed magnetron sputtering technology, under the conditions of a power of 200 W, a flow ratio of argon to oxygen of 20 sccm:1.8 sccm and a temperature of 500°C, a second thermotropic phase change layer is deposited on the other side of the pretreated substrate, thereby completing the preparation method of a high-performance intelligent infrared optical switch.

[0205] The high-performance intelligent infrared light switch prepared in Example 9 was subjected to an infrared transmittance spectrum test, with a test wavelength range of 2.5 μm to 15 μm and a test high and low temperature of 200°C and 300°C. The result showed that its 200°C low-temperature peak transmission wavelength was 6.4 μm. At a wavelength of 6.4 μm, the corresponding 200°C transmittance was 0.19 dB, the 300°C transmittance was 38.76 dB, the transmission tuning ratio was 38.57 dB, and the half-peak width was 11 μm.

[0206] Embodiment ten:

[0207] A high-performance intelligent infrared optical switch, which comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate and a second thermotropic phase change layer;

[0208] The first thermotropic phase change layer is a V2O5 thermotropic phase change layer, and also serves as an infrared high-transmittance medium layer; the second thermotropic phase change layer is a V2O5 thermotropic phase change layer.

[0209] The infrared transparent substrate is made of Si.

[0210] The thickness of the first thermotropic phase change layer is 1400 nm; the thickness of the second thermotropic phase change layer is 1400 nm.

[0211] The above-mentioned method for preparing a high-performance intelligent infrared light switch is carried out according to the following steps:

[0212] 1. Cleaning the substrate:

[0213] Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate;

[0214] 2. Preparation of infrared high-transmittance dielectric layer and front thermoinduced phase change layer:

[0215] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200W, flow ratio of argon to oxygen of 20sccm:1.6sccm and temperature of 550°C, an infrared high-transmittance dielectric layer and a first thermoinduced phase change layer were deposited on the surface of one side of the pretreated substrate;

[0216] 3. Preparation of backside thermoinduced phase change layer:

[0217] Using high-power pulsed magnetron sputtering technology, under the conditions of power of 200 W, flow ratio of argon to oxygen of 20 sccm:1.6 sccm and temperature of 550°C, a second thermotropic phase change layer is deposited on the other side of the pretreated substrate, thus completing the preparation method of a high-performance intelligent infrared optical switch.

[0218] The high-performance intelligent infrared optical switch prepared in Example 10 was subjected to an infrared transmission spectrum test, with a test wavelength range of 2.5 μm to 15 μm, and a test high and low temperature of 200°C and 300°C. The result showed that the low-temperature peak transmission wavelength at 200°C was 3.5 μm. At a wavelength of 3.5 μm, the corresponding transmittance at 200°C was 0.02 dB, the transmittance at 300°C was 155.02 dB, the transmission tuning ratio was 155 dB, and the half-peak width was 12 μm. Figure 6 As shown, Figure 6 This is a comparison chart of the transmittance of the high-performance intelligent infrared light switch prepared in Example 10 at different temperatures.

[0219] In this embodiment, V2O5 is selected as both a high infrared transmittance dielectric layer and a thermally induced phase change function.

Claims

1. A high-performance intelligent infrared light switch, characterized in that It comprises, from top to bottom, a first thermotropic phase change layer, an infrared high-transmittance medium layer, an infrared transparent substrate, and a second thermotropic phase change layer; The first thermotropic phase change layer and the second thermotropic phase change layer are both VO2 thermotropic phase change layers or V2O5 thermotropic phase change layers.

2. A high performance intelligent infrared light switch according to claim 1, characterized in that The infrared transmission band of the infrared transparent substrate is 2 μm to 16 μm.

3. A high performance intelligent infrared light switch according to claim 2, characterized in that The infrared transparent substrate is made of Si, Ge, ZnSe, ZnS, diamond or sapphire.

4. A high performance intelligent infrared light switch according to claim 1, characterized in that The material of the infrared high-transmittance dielectric layer is ZrO2, HfO2, SiO2, TiO2, Al2O3 or V2O5.

5. A high performance intelligent infrared light switch according to claim 4, characterized in that The thickness of the infrared high-transmittance medium layer is 400nm-1400nm.

6. A high performance intelligent infrared light switch according to claim 1, characterized in that When the first thermotropic phase change layer is a VO2 thermotropic phase change layer, the thickness of the first thermotropic phase change layer is 20nm-100nm; when the first thermotropic phase change layer is a V2O5 thermotropic phase change layer, the thickness of the first thermotropic phase change layer is 50nm-200nm.

7. A high performance intelligent infrared light switch according to claim 1, characterized in that When the second thermotropic phase change layer is a VO2 thermotropic phase change layer, the thickness of the second thermotropic phase change layer is 400nm-1000nm; when the second thermotropic phase change layer is a V2O5 thermotropic phase change layer, the thickness of the second thermotropic phase change layer is 500nm-1400nm.

8. The method for preparing a high-performance intelligent infrared light switch according to claim 1, characterized in that It is carried out in the following steps:

1. Cleaning the substrate: Cleaning and drying the infrared transparent substrate to obtain a pretreated substrate; 2. Preparation of infrared high-transmittance dielectric layer: The high infrared transmittance dielectric layer is deposited on the surface of one side of the pre-treated substrate by using magnetron sputtering technology; 3. Preparation of front thermoinduced phase change layer: The first thermally induced phase change layer is deposited on the surface of the infrared high-transmittance dielectric layer by using magnetron sputtering technology; 4. Preparation of backside thermoinduced phase change layer: The second thermotropic phase change layer is deposited on the other surface of the pretreated substrate by magnetron sputtering technology, thereby completing the preparation method of the high-performance intelligent infrared optical switch.

9. The method for preparing a high-performance intelligent infrared light switch according to claim 8, characterized in that When the first thermoinduced phase change layer prepared in step three is a VO2 thermoinduced phase change layer, or the second thermoinduced phase change layer prepared in step four is a VO2 thermoinduced phase change layer, the specific steps are as follows: high-power pulsed magnetron sputtering technology is used, and high-power pulsed magnetron sputtering is performed under the conditions of a power of 100W to 200W, an argon to oxygen flow ratio of 80sccm: (1.2sccm to 2.0sccm) and a temperature of 500℃ to 600℃.

10. The method for preparing a high-performance intelligent infrared light switch according to claim 8, characterized in that When the material of the infrared high-transmittance dielectric layer prepared in step 2 is V2O5, or the first thermotropic phase change layer prepared in step 3 is a V2O5 thermotropic phase change layer, or the second thermotropic phase change layer prepared in step 4 is a V2O5 thermotropic phase change layer, the specific steps are as follows: high-power pulsed magnetron sputtering technology is used, and high-power pulsed magnetron sputtering is performed under the conditions of a power of 100W to 200W, a flow ratio of argon to oxygen of 20sccm:(1.6sccm to 2.6sccm) and a temperature of 300℃ to 550℃.

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