Photoresist removing composition and method for forming wire structure by using photoresist

Abstract

The invention provides a photoresist removing composition and application thereof in forming a lead structure. The photoresist remover composition comprises the following components: a first component selected from propylene carbonate, ethylene carbonate, butylene carbonate or a combination thereof; a second component selected from alkylamine having 1 to 18 carbon atoms; a third component selected from alkyl esters of carboxylic acids wherein the carboxylic acid moiety has a carbon number of 1 to 6 and the alkyl moiety has a carbon number of 1 to 6; based on the total weight of the photoresist removing composition, the content of the first component is 81 wt% to 93 wt%, and the content of the third component is 5 wt% to 12 wt%.

Description

Technical Field

[0001] The present invention relates to a photoresist stripping composition, more particularly, to an environmentally friendly photoresist stripping composition. The present invention also relates to an application of the photoresist stripping composition in forming a conductive line structure. Background Art

[0002] The process of electronic devices often includes the following steps: forming a photoresist pattern on the surface of a conductive layer formed on a substrate; and etching using the photoresist pattern as a mask to form a conductive line structure. The photoresist pattern used as a mask must be removed by a photoresist stripper after the conductive line structure is formed to enter the subsequent process.

[0003] The photoresist stripper must not only have good photoresist removal capabilities, but also must not be corrosive to other parts other than the photoresist, such as wafers, metal wires, coating layers, etc., otherwise it will adversely affect product yield and reliability. In addition, the photoresist strippers currently on the market usually contain high levels of dimethyl sulfoxide (DMSO), N-methyl pyrrolidone (NMP) or tetramethylammoniumhydroxide (TMAH) and other ingredients. However, DMSO, NMP or TMAH are toxic controlled substances, so the photoresist strippers using those substances do not meet the requirements of green and environmentally friendly processes.

[0004] Therefore, how to provide a photoresist removal composition that has excellent photoresist removal ability, is non-corrosive to other parts other than the photoresist, is environmentally friendly, and meets the goal of green environmental protection process is a technical problem that needs to be solved urgently in this field. Summary of the invention

[0005] In view of this, the present invention provides a photoresist stripping composition that meets the goal of green environmental protection process, which contains a specific composition and can effectively remove photoresist to achieve a cleaning effect, and has low corrosion to metals such as copper, nickel, and aluminum, and does not damage wafers and coating layers.

[0006] Therefore, an object of the present invention is to provide a photoresist stripping composition comprising the following components:

[0007] A first component selected from propylene carbonate, ethylene carbonate, butylene carbonate or a combination thereof;

[0008] A second component selected from alkylamines having a carbon number of 1 to 18;

[0009] A third component selected from alkyl carboxylates wherein the carbon number of the carboxylic acid portion is 1 to 6 and the carbon number of the alkyl portion is 1 to 6; and

[0010] Cationic surfactant,

[0011] Wherein, based on the total weight of the photoresist stripping composition, the content of the first component is 81 wt % to 93 wt %, and the content of the third component is 5 wt % to 12 wt %.

[0012] In some embodiments of the present invention, the first component is propylene carbonate.

[0013] In some embodiments of the present invention, the second component is a trialkylamine having 3 to 18 carbon atoms.

[0014] In some embodiments of the present invention, the second component is selected from the following group: triethylamine, trimethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-n-pentylamine, triisopentylamine, dimethylethylamine, dimethylpropylamine, methyldiethylamine, methyldipropylamine, and combinations thereof. In a preferred embodiment of the present invention, the second component is triethylamine.

[0015] In some embodiments of the present invention, the third component is an alkyl acetate, wherein the carbon number of the alkyl portion is 1 to 6.

[0016] In some embodiments of the present invention, the third component is selected from the following group: n-butyl acetate, methyl acetate, ethyl acetate, n-propyl acetate, isopropyl acetate, isobutyl acetate, secondary butyl acetate, tertiary butyl acetate, n-pentyl acetate, isopentyl acetate, n-hexyl acetate, cyclohexyl acetate, and combinations thereof. In a preferred embodiment of the present invention, the third component is n-butyl acetate.

[0017] In some embodiments of the present invention, based on the total weight of the photoresist stripping composition, the second component is present in an amount of 1 wt % to 8 wt %.

[0018] In some embodiments of the present invention, the content of the cationic surfactant is 0.1 wt % to 4.5 wt % based on the total weight of the photoresist stripping composition.

[0019] In some embodiments of the present invention, the cationic surfactant is a quaternary ammonium salt.

[0020] In some embodiments of the present invention, the quaternary ammonium salt has the structure of the following formula (I):

[0021]

[0022] In formula (I), R1 is a direct bond or a methylene group, R2 and R3 are each independently a methyl group or an ethyl group, R4 is a C1 to C18 alkyl group, and X is Br or Cl.

[0023] In some embodiments of the present invention, in formula (I), R1 is a direct bond, R2 and R3 are methyl groups, and X is Cl.

[0024] Another object of the present invention is to provide a method for forming a conductive line structure, the method comprising:

[0025] forming a conductive layer on a substrate;

[0026] forming a photoresist pattern defining a conductive line structure on the conductive layer;

[0027] etching the conductive layer using the photoresist pattern as an etching mask; and

[0028] The photoresist pattern is removed using the aforementioned photoresist stripping composition.

[0029] In order to make the above-mentioned objectives, technical features and advantages of the present invention more obvious and easy to understand, some specific implementation schemes are described in detail below. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figures 1 to 4 The optical microscope photos of the test wafer (dummy wafer) after being cleaned by the photoresist stripping composition of the embodiment are shown respectively.

[0031] Figure 5 This is an optical microscope photo of an uncleaned wafer.

[0032] Figure 6 are optical microscope photographs of the test wafers cleaned by the photoresist stripping compositions of the embodiment and the reference example, respectively. DETAILED DESCRIPTION

[0033] Some specific embodiments according to the present invention will be described in detail below; however, the present invention can also be practiced in a variety of different forms, and the protection scope of the present invention should not be limited to the specific embodiments.

[0034] Unless otherwise specified, the terms "a", "an", "the" and similar terms used in the specification and claims should be understood to include both the singular and the plural.

[0035] Unless otherwise specified, the terms “first”, “second” and the like used in the specification and the claims are merely used to distinguish the described elements or components and have no special meanings and are not used to represent a sequence.

[0036] The photoresist stripping composition of the present invention can obtain excellent photoresist removal ability by combining a specific first component, a second component, a third component and a cationic surfactant, and is non-corrosive to metals such as copper, nickel, and aluminum, and does not damage wafers and coating layers. The above effects can only be provided when the first component, the second component, the third component and the cationic surfactant are used at the same time. In addition, the photoresist stripping composition of the present invention does not contain toxic substances such as DMSO, NMP, TMAH, etc., which meets the goal of green environmental protection process and is safe in process. The following provides a detailed description of the photoresist stripping composition of the present invention.

[0037] 1. Photoresist removal composition

[0038] The photoresist stripping composition of the present invention comprises a first component, a second component, a third component and a cationic surfactant. In some embodiments of the present invention, the photoresist stripping composition is substantially composed of the first component, the second component, the third component and the cationic surfactant, or the photoresist stripping composition is composed of the first component, the second component, the third component and the cationic surfactant.

[0039] Generally speaking, photoresists are divided into positive photoresists and negative photoresists according to the changes after exposure and development. After exposure, the part of the positive photoresist exposed to light will dissolve during development, leaving the photoresist pattern of the unexposed part after development. After exposure, the part of the negative photoresist not exposed to light will dissolve during development, leaving the photoresist pattern of the exposed part after development. The photoresist removal composition of the present invention is particularly suitable for removing positive photoresist patterns.

[0040] 1.1. First ingredient

[0041] The first component is selected from propylene carbonate, ethylene carbonate, butylene carbonate or a combination thereof. The inventors have found that when the first component is used as a cleaning agent, the photoresist removal composition can have excellent photoresist removal ability. In contrast, when tetrahydrofuran, acetone, ethyl acetate, dichloromethane, dichloroethane, chloroform, xylene, etc. are used as cleaning agents, the excellent photoresist removal ability cannot be obtained.

[0042] In a preferred embodiment of the present invention, the first component is propylene carbonate. Propylene carbonate is a colorless and odorless liquid that is miscible with solvents such as ether, acetone, benzene, chloroform, vinyl acetate, and is soluble in water and carbon tetrachloride. Propylene carbonate also has the advantages of high solvency, high flash point, high boiling point, low volatility rate, low volatile organic compound (VOC), low toxicity, and low odor. In addition, since propylene carbonate is generally prepared by the reaction of propylene oxide and carbon dioxide, the photoresist stripping composition of the present invention using propylene carbonate meets the goal of green environmental protection process.

[0043] In the photoresist stripping composition of the present invention, based on the total weight of the photoresist stripping composition, the content of the first component is 81 wt % to 93 wt %, preferably 82 wt % to 90 wt %, and particularly preferably 83 wt % to 87 wt %. For example, in the photoresist stripping composition of the present invention, based on the total weight of the photoresist stripping composition, the content of the first component may be 81 weight%, 81.5 weight%, 82 weight%, 82.5 weight%, 83 weight%, 83.5 weight%, 84 weight%, 84.5 weight%, 85 weight%, 85.5 weight%, 86 weight%, 86.5 weight%, 87 weight%, 87.5 weight%, 88 weight%, 88.5 weight%, 89 weight%, 89.5 weight%, 90 weight%, 90.5 weight%, 91 weight%, 91.5 weight%, 92 weight%, 92.5 weight%, or 93 weight%, or a range between any two of the above values.

[0044] 1.2. Second ingredient

[0045] The second component is selected from an alkylamine having a carbon number of 1 to 18. Without being limited by theory, it is believed that the second component can destroy the structure of the photoresist and enhance the photoresist removal effect. In the prior art, ethylenediamine is generally used to destroy the structure of the photoresist, but the photoresist stripping agent using ethylenediamine is corrosive to metals such as tin, aluminum, and copper. The inventors have found that, in comparison, under the synergistic effect of the alkylamine having a carbon number of 1 to 18 and other components of the photoresist stripping agent composition of the present invention, the photoresist stripping agent of the present invention can not only provide excellent photoresist removal effect, but also show low corrosion to metals such as tin, aluminum, and copper.

[0046] Herein, the alkylamine having a carbon number of 1 to 18 refers to an alkylamine containing one or more alkyl groups and the sum of the carbon numbers of the one or more alkyl groups is 1 to 18. The carbon numbers of each alkyl group may be the same or different. Examples of the alkyl group include, but are not limited to, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, secondary butyl, tertiary butyl, n-pentyl, isopentyl, neopentyl, n-hexyl, isohexyl, n-heptyl, isoheptyl, n-octyl, isooctyl, n-nonyl, isononyl, n-decyl, isodecyl, n-undecyl, isoundecyl, n-dodecyl, isododecyl, n-tridecyl, isotridecyl, n-tetradecyl, isotetradecyl, n-pentadecyl, isopentadecyl, n-hexadecyl, isohexadecyl, n-heptadecyl, isoheptadecyl, n-octadecyl, and isooctadecyl.

[0047] In some embodiments of the present invention, the second component is a trialkylamine having a carbon number of 3 to 18, that is, an alkylamine containing three alkyl groups and the sum of the carbon numbers of the three alkyl groups is 3 to 18. The carbon numbers of each alkyl group may be the same or different. Herein, the carbon number of the trialkylamine refers to the sum of the carbon numbers of all alkyl moieties, for example, triethylamine is a trialkylamine having a carbon number of 6, tri-n-propylamine is a trialkylamine having a carbon number of 9, and tri-n-pentylamine is a trialkylamine having a carbon number of 15. In a preferred embodiment of the present invention, the second component is selected from the following group: triethylamine, trimethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-n-pentylamine, triisopentylamine, dimethylethylamine, dimethylpropylamine, methyldiethylamine, methyldipropylamine, and combinations thereof. In the attached examples, triethylamine is used as the second component.

[0048] In the photoresist stripping composition of the present invention, the content of the second component may be 1 wt % to 8 wt %, specifically 3 wt % to 7 wt %, and more specifically 4 wt % to 6 wt %, based on the total weight of the photoresist stripping composition. For example, in the photoresist stripping composition of the present invention, the content of the second component may be 1 wt %, 1.5 wt %, 2 wt %, 2.5 wt %, 3 wt %, 3.5 wt %, 4 wt %, 4.5 wt %, 5 wt %, 5.5 wt %, 6 wt %, 6.5 wt %, 7 wt %, 7.5 wt %, or 8 wt %, or a range between any two of the above values. When the content of the second component is within the above range, the photoresist stripping composition can obtain a better photoresist removal effect and exhibit low corrosion.

[0049] 1.3. Third ingredient

[0050] The third component is selected from carboxylic acid alkyl esters, wherein the carbon number of the carboxylic acid portion is 1 to 6 and the carbon number of the alkyl portion is 1 to 6. Without being limited by theory, it is believed that the third component can promote the dissolution of the photoresist and enhance the photoresist removal effect. In the prior art, alcohol ether compounds are generally used to promote the dissolution of the photoresist, but the inventors have found that under the synergistic effect of the carboxylic acid alkyl ester and other components of the photoresist removal composition of the present invention, the photoresist removal composition of the present invention can provide a more excellent photoresist removal effect.

[0051] The alkyl carboxylates include alkyl acetates, alkyl propionates, and alkyl butyrates. Each of the aforementioned alkyl carboxylates may be used alone or in combination of two or more. In some embodiments of the present invention, an alkyl acetate in which the carbon number of the alkyl portion is 1 to 6 is used as the third component, more specifically, n-butyl acetate, methyl acetate, ethyl acetate, n-propyl acetate, isopropyl acetate, isobutyl acetate, secondary butyl acetate, tertiary butyl acetate, n-pentyl acetate, isopentyl acetate, n-hexyl acetate, or cyclohexyl acetate is used as the third component, and more specifically, n-butyl acetate is used as the third component.

[0052] In the photoresist stripping composition of the present invention, the content of the third component is 5 wt % to 12 wt %, more specifically 6 wt % to 10 wt %, based on the total weight of the photoresist stripping composition. For example, in the photoresist stripping composition of the present invention, the content of the third component can be 5 wt %, 5.5 wt %, 6 wt %, 6.5 wt %, 7 wt %, 7.5 wt %, 8 wt %, 8.5 wt %, 9 wt %, 9.5 wt %, 10 wt %, 10.5 wt %, 11 wt %, 11.5 wt %, or 12 wt %, or a range between any two of the above values. When the content of the third component is within the above range, the photoresist stripping composition can obtain a better photoresist removal effect.

[0053] 1.4. Cationic surfactant

[0054] The photoresist stripping composition of the present invention comprises a cationic surfactant. Without being limited by theory, it is believed that the cationic surfactant can improve the embedding property of the photoresist stripping composition into the photoresist and enhance the photoresist removal effect. In the prior art, alcohol amine compounds are usually used to help the photoresist stripping composition embed into the photoresist, but the inventors have found that under the synergistic effect of the cationic surfactant and other components of the photoresist stripping composition of the present invention, the photoresist stripping composition of the present invention can provide a more excellent photoresist removal effect, and the photoresist stripping composition can be cleaned more times (or the amount that can be cleaned) and has good economic efficiency.

[0055] In some embodiments of the present invention, a quaternary ammonium salt is used as a cationic surfactant. The quaternary ammonium salt may have the following structure (I):

[0056]

[0057] In formula (I), R1 is a direct bond or a methylene group, R2 and R3 are each independently a methyl group or an ethyl group, R4 is a C1 to C18 alkyl group, and X is Br or Cl. Examples of the C1 to C18 alkyl group include, but are not limited to, methyl, ethyl, n-propyl, isopropyl, n-butyl, isobutyl, secondary butyl, tertiary butyl, n-pentyl, isopentyl, neopentyl, n-hexyl, isohexyl, n-heptyl, isoheptyl, n-octyl, isooctyl, n-nonyl, isononyl, n-decyl, isodecyl, n-undecyl, isoundecyl, n-dodecyl, isododecyl, n-tridecyl, isotridecyl, n-tetradecyl, isotetradecyl, n-pentadecyl, isopentadecyl, n-hexadecyl, isohexadecyl, n-heptadecyl, isoheptadecyl, n-octadecyl, and isooctadecyl. In the accompanying examples, R1 of formula (I) is a direct bond, R2 and R3 are methyl groups, R4 is methyl, and X is Cl.

[0058] In the photoresist stripping composition of the present invention, the content of the cationic surfactant may be 0.1 wt % to 4.5 wt %, more specifically 0.5 wt % to 4 wt %, and even more specifically 1 wt % to 3 wt %, based on the total weight of the photoresist stripping composition. For example, in the photoresist stripping composition of the present invention, the content of the cationic surfactant may be 0.1 wt %, 0.2 wt %, 0.3 wt %, 0.4 wt %, 0.5 wt %, 0.6 wt %, 0.7 wt %, 0.8 wt %, 0.9 wt %, 1 wt %, 1.1 wt %, 1.2 wt %, 1.3 wt %, 1.4 wt %, 1.5 wt %, 1.6 wt %, 1.7 wt %, 1.8 wt %, 1.9 wt %, 2 wt %, 2.1 wt %, 2.2 wt %, 2.3 wt %, 2.4 wt %, 2.5 wt %, 2.6 wt %, 2.7 wt %, 2.8 wt %, 2.9 wt %, 2.1 wt %, 2. %, 2.2 wt %, 2.3 wt %, 2.4 wt %, 2.5 wt %, 2.6 wt %, 2.7 wt %, 2.8 wt %, 2.9 wt %, 3 wt %, 3.1 wt %, 3.2 wt %, 3.3 wt %, 3.4 wt %, 3.5 wt %, 3.6 wt %, 3.7 wt %, 3.8 wt %, 3.9 wt %, 4 wt %, 4.1 wt %, 4.2 wt %, 4.3 wt %, 4.4 wt %, or 4.5 wt %, or in a range consisting of any two of the above values.

[0059] 2. Method of forming a conductor structure

[0060] The process of preparing electronic devices often involves using a photoresist pattern as a mask to form a conductor structure. Therefore, the present invention also provides a method for forming a conductor structure, comprising: forming a conductive layer on a substrate; forming a photoresist pattern defining a conductor structure on the conductive layer; etching the conductive layer using the photoresist pattern as an etching mask; and removing the photoresist pattern using the photoresist removal composition of the present invention. Examples of the substrate include, but are not limited to, silicon wafers. The photoresist pattern is, for example, a positive photoresist pattern. Examples of the conductive layer include, but are not limited to, a copper conductive layer.

[0061] 3. Example

[0062] 3.1. Photoresist removal ability test 1

[0063] [Example 1]

[0064] 85 wt % of propylene carbonate, 5 wt % of triethylamine, 8 wt % of n-butyl acetate, and 2 wt % of a cationic surfactant (a compound of formula (I), wherein R1 is a direct bond, R2 and R3 are methyl groups, R4 is a methyl group, and X is Cl) are mixed uniformly to obtain a photoresist stripping composition.

[0065] 90 ml of the photoresist stripping composition was placed in a 100 ml beaker. Six 8-inch test wafers coated with photoresists with a thickness of 12 to 15 μm were prepared. The photoresists were SPR220 and AZP4620 (purchased from ASE). The test wafers were cut into dozens of pieces and placed in a beaker. They were gently shaken at 60°C for 15 minutes for cleaning. After cleaning, the state of the wafers was confirmed with an optical microscope. The results are as follows: Figure 1 shown.

[0066] from Figure 1 It can be seen that the photoresist removal composition of the present invention has excellent photoresist removal ability and will not corrode the wafer. In addition, 90 ml of the photoresist removal composition of the present invention can clean at least 6 8-inch wafers, which means that 60 liters of the photoresist removal composition on the production line can clean at least 3,500 8-inch wafers, indicating that the photoresist removal composition of the present invention has a high cleaning frequency and good economic efficiency.

[0067] [Example 2]

[0068] 90 ml of the photoresist removal composition prepared in Example 1 was placed in a 100 ml beaker. Six 8-inch test wafers coated with photoresists having a thickness of 12 μm to 15 μm were prepared. The photoresists were KM701 and KM720 (purchased from Chi Mei). The test wafers were cut into dozens of pieces and placed in a beaker. They were gently shaken at 60°C for 15 minutes for cleaning. After cleaning, the state of the wafers was confirmed with an optical microscope. The results are as follows: Figure 2 shown.

[0069] Repeat the above experiment, but increase the cleaning time to 60 minutes. The experimental results are as follows Figure 3 shown.

[0070] from Figure 2 and Figure 3 It can be seen that even if the types of photoresists are different, the photoresist removal ability of the photoresist stripping composition of the present invention is still very excellent, and even if the processing time is increased, the photoresist stripping composition of the present invention will not corrode the wafer.

[0071] In addition, the cleaned wafer was checked for pattern status at the metal center. Figure 4 As shown. Figure 4 It can be seen that the gaps inside the pattern have also been cleaned and there is no back-sticking.

[0072] 3.2. Photoresist removal ability test 2

[0073] [Reference Example 1]

[0074] 80 wt % of propylene carbonate, 5 wt % of benzyltrimethylammonium hydroxide, 1 wt % of ethylenediamine, 7 wt % of ethylene glycol monobutyl ether and 7 wt % of diethylene glycol monobutyl ether were uniformly mixed to obtain the photoresist stripping composition of Reference Example 1.

[0075] [Reference Example 2]

[0076] As the photoresist composition of Reference Example 2, commercially available AZPCR 4600 photoresist was used.

[0077] [Comparison of photoresist removal ability]

[0078] The uncleaned wafer was photographed with an optical microscope in advance, and the results are as follows: Figure 5 As shown, obvious stains can be seen.

[0079] 7000 12-inch standard image wafers were cleaned using 40 liters of the photoresist removal compositions of Example 1, Reference Example 1 and Reference Example 2, respectively. The cleaning conditions were 15 minutes of slight shaking at 60°C. After the cleaning was completed, the conditions of the wafers of Example 1, Reference Example 1 and Reference Example 2 were confirmed by optical microscope. The results are as follows: Figure 6 As shown. Figure 6It can be seen that the photoresist removal composition of the present invention (ie, Example 1) has the best photoresist removal ability, without any stains or photoresist residues. In contrast, the photoresist removal compositions of Reference Examples 1 and 2 have poor photoresist removal abilities, with obvious stains and photoresist residues. In addition, it was observed in the experiment that the photoresist removal composition of Reference Example 1 began to have a back-sticking phenomenon when about 3,500 sheets were cleaned or when the viscosity reached 2,500 cps, so the number of cleaning times was low and the economic efficiency was poor.

[0080] 3.3. Copper ion precipitation test

[0081] The wafer cleaning procedure of Example 1 was carried out using the photoresist compositions of Example 1 and Reference Example 1, respectively, and the used photoresist stripping composition (i.e., the photoresist stripping composition used to clean 6 8-inch wafers) was sent to SGS for inspection. The copper ion concentration of the used photoresist stripping composition of Example 1 was measured to be 38 ppm, and the copper ion concentration of the used photoresist stripping composition of Reference Example 1 was 75 ppm, indicating that the photoresist stripping composition of the present invention has lower corrosion to copper.

[0082] 3.4. Chemical oxygen demand test

[0083] The following experiment was conducted to confirm the beneficial effect of the photoresist stripping composition of the present invention on reducing chemical oxygen demand (COD). First, the COD concentration of 5 kg of the used photoresist stripping composition of the present invention (i.e., the "wasted photoresist stripping composition stock solution" in Table 1) was measured, and the results are recorded in Table 1 below. Next, 5 kg of the used photoresist stripping composition of the present invention (i.e., the "wasted photoresist stripping composition stock solution") was mixed evenly with 5 kg of 15% alkaline liquid and an appropriate amount of COD degradation reagent (model: DC50, purchased from Wanneng Trade) to obtain a mixture, and the mixture was aerated at an air flow rate of 30 liters / minute for 24 hours. Thereafter, the COD concentration of the treated waste photoresist stripping composition (i.e., the "wasted photoresist stripping composition after treatment" in Table 1) was measured, and the results are recorded in Table 1 below.

[0084] Table 1: COD concentration

[0085]

[0086] As shown in Table 1, after the waste photoresist stripping composition was treated, the total COD amount was reduced from 2434000 to 70000, which means that under alkaline conditions and the treatment of COD degradation reagents, the COD amount can be greatly reduced by 97%. The above experimental data show that under the sewage treatment method commonly used in the industry, the COD amount of the photoresist stripping composition of the present invention can be effectively reduced, and the pollution to the environment can be effectively reduced when it is subsequently discharged.

[0087] The above embodiments are only used to illustrate the principle and efficacy of the present invention and to describe the technical features of the present invention, and are not intended to limit the scope of protection of the present invention. Any changes or arrangements that can be easily completed by a person skilled in the art without violating the technical principle of the present invention are within the scope of the present invention.

Claims

1. A photoresist stripping composition, characterized in that: Contains the following ingredients: A first component selected from propylene carbonate, ethylene carbonate, butylene carbonate or a combination thereof; A second component selected from alkylamines having a carbon number of 1 to 18; A third component selected from alkyl carboxylates wherein the carbon number of the carboxylic acid portion is 1 to 6 and the carbon number of the alkyl portion is 1 to 6; and Cationic surfactant, Wherein, based on the total weight of the photoresist stripping composition, the content of the first component is 81 wt % to 93 wt %, and the content of the third component is 5 wt % to 12 wt %.

2. The photoresist stripping composition according to claim 1, characterized in that: The first component is propylene carbonate.

3. The photoresist stripping composition according to claim 1, characterized in that: The second component is a trialkylamine having 3 to 18 carbon atoms.

4. The photoresist stripping composition according to claim 3, characterized in that: The second component is selected from the following group: triethylamine, trimethylamine, tri-n-propylamine, triisopropylamine, tri-n-butylamine, triisobutylamine, tri-n-pentylamine, triisopentylamine, dimethylethylamine, dimethylpropylamine, methyldiethylamine, methyldipropylamine, and combinations thereof.

5. The photoresist stripping composition according to claim 4, characterized in that: The second component is triethylamine.

6. The photoresist stripping composition according to claim 1, wherein: The third component is an alkyl acetate, wherein the carbon number of the alkyl portion is 1 to 6.

7. The photoresist stripping composition according to claim 6, wherein: The third component is selected from the following group: n-butyl acetate, methyl acetate, ethyl acetate, n-propyl acetate, isopropyl acetate, isobutyl acetate, secondary butyl acetate, tertiary butyl acetate, n-pentyl acetate, isopentyl acetate, n-hexyl acetate, cyclohexyl acetate, and combinations thereof.

8. The photoresist stripping composition according to claim 7, wherein: The third component is n-butyl acetate.

9. The photoresist stripping composition according to any one of claims 1 to 8, characterized in that: The content of the second component is 1 wt % to 8 wt % based on the total weight of the photoresist stripping composition.

10. The photoresist stripping composition according to any one of claims 1 to 8, characterized in that: Based on the total weight of the photoresist stripping composition, the content of the cationic surfactant is 0.1 wt % to 4.5 wt %.

11. The photoresist stripping composition according to any one of claims 1 to 8, characterized in that: The cationic surfactant is a quaternary ammonium salt.

12. The photoresist stripping composition according to claim 11, characterized in that: The quaternary ammonium salt has the structure of the following formula (I): In formula (I), R1 is a direct bond or a methylene group, R2 and R3 are each independently a methyl group or an ethyl group, R4 is a C1 to C18 alkyl group, and X is Br or Cl.

13. The photoresist stripping composition according to claim 12, wherein: In formula (I), R1 is a direct bond, R2 and R3 are methyl groups, and X is Cl.

14. A method for forming a conductive line structure, characterized in that: Include: forming a conductive layer on a substrate; forming a photoresist pattern defining a conductive line structure on the conductive layer; etching the conductive layer using the photoresist pattern as an etching mask; and The photoresist pattern is removed using the photoresist stripping composition as claimed in any one of claims 1 to 13.

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