Inspection device and semiconductor manufacturing apparatus including the same

Abstract

The invention provides an inspection device and semiconductor manufacturing equipment including the same. The inspection device can perform inspection of the equipment without damaging the equipment. The inspection apparatus includes: a measurement module that measures a first impedance at the first port and a second impedance at the second port; the comparison module compares the first impedance with the second impedance; and a determination module that determines whether the equipment component is operating correctly based on a comparison result of a first impedance including a first resistance and a first reactance and a second impedance including a second resistance and a second reactance, and a determination module determines whether the equipment component is operating correctly based on at least one of a comparison result of the first resistance and the second resistance and a comparison result of the first reactance and the second reactance.

Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims priority to Korean Patent Application No. 10-2023-0120286 filed in the Korean Intellectual Property Office on September 11, 2023, and all rights and benefits derived therefrom, the disclosure of which is incorporated herein by reference in its entirety. Technical Field

[0003] The present disclosure relates to an inspection device for processing a substrate and semiconductor manufacturing equipment including the inspection device. Background Art

[0004] Equipment for processing a substrate using plasma can be inspected based on data such as voltage or current data obtained when the equipment is used. If it is determined that the equipment is not operating correctly, the part of the equipment suspected of malfunctioning can be replaced, and the equipment can be inspected again. However, this type of inspection method has the problem of needing to destroy the equipment, and if the relevant part is found to be operating normally, there is a problem of needing to re-inspect the equipment. Summary of the invention

[0005] Aspects of the present disclosure provide an inspection apparatus capable of performing high-reliability inspection of equipment without damaging the equipment, and semiconductor manufacturing equipment including the inspection apparatus.

[0006] However, aspects of the present disclosure are not limited to those described herein. The above and other aspects of the present disclosure will become more apparent to those skilled in the art to which the present disclosure belongs by referring to the detailed description of the present disclosure given below.

[0007] According to one aspect of the present disclosure, the inspection equipment includes: a measurement module, which measures a first impedance at a first port on one side of an equipment component arranged in a substrate processing device, and a second impedance at a second port on the other side of the equipment component; a comparison module, which compares the first impedance and the second impedance; and a determination module, which determines whether the equipment component is operating correctly based on a comparison result of the first impedance and the second impedance, wherein the first impedance includes a first resistance and a first reactance, the second impedance includes a second resistance and a second reactance, and the determination module determines whether the equipment component is operating correctly based on at least one of a comparison result of the first resistance and the second resistance and a comparison result of the first reactance and the second reactance.

[0008] According to another aspect of the present disclosure, semiconductor manufacturing equipment includes: a substrate processing device that uses plasma to process a substrate; and an inspection device that determines whether the equipment component in the substrate processing device is operating correctly; wherein the inspection device includes: a measurement module that measures a first impedance at a first port on one side of the equipment component set in the substrate processing device, and a second impedance at a second port on the other side of the equipment component; a comparison module that compares the first impedance and the second impedance; and a determination module that determines whether the equipment component is operating correctly based on a comparison result of the first impedance and the second impedance, the first impedance includes a first resistance and a first reactance, the second impedance includes a second resistance and a second reactance, and the determination module determines whether the equipment component is operating correctly based on at least one of the comparison result of the first resistance and the second resistance and the comparison result of the first reactance and the second reactance.

[0009] According to another aspect of the present disclosure, an inspection device inspects an equipment component in a substrate processing device based on an input impedance measurement theory, comprising: a measurement module for measuring a first impedance at a first port set on one side of the equipment component and a second impedance at a second port set on the other side of the equipment component; a comparison module for comparing the first impedance and the second impedance; and a determination module for determining whether the equipment component is operating correctly based on a comparison result of the first impedance and the second impedance, wherein the first impedance includes a first resistance and a first reactance, the second impedance includes a second resistance and a second reactance, the comparison module uses one of an absolute value comparison method and a difference comparison method to compare the first resistance and the second resistance, and to compare the first reactance and the second reactance; the determination module determines whether the equipment component is operating normally based on at least one of a first condition and a second condition, the first condition being whether a comparison result of the first resistance and the second resistance is equal to or less than a first reference value or a third reference value, the second condition being whether a comparison result of the first reactance and the second reactance is equal to or less than a second reference value or a fourth reference value, and if both the first condition and the second condition are satisfied, the determination module determines that the equipment component is operating correctly.

[0010] It should be noted that the effects of the present disclosure are not limited to those described above, and other effects of the present disclosure will be apparent from the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] The above and other aspects and features of the present disclosure will become more apparent by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings, in which:

[0012] Figure 1is a first exemplary schematic diagram showing an internal configuration of a semiconductor manufacturing equipment for processing a substrate;

[0013] Figure 2 is a second exemplary schematic diagram showing an internal configuration of a semiconductor manufacturing equipment for processing a substrate;

[0014] Figure 3 is a third exemplary schematic diagram showing the internal configuration of semiconductor manufacturing equipment for processing a substrate;

[0015] Figure 4 is a first exemplary cross-sectional view showing the internal configuration of a substrate processing apparatus constituting semiconductor manufacturing equipment;

[0016] Figure 5 is a second exemplary cross-sectional view showing the internal configuration of a substrate processing apparatus constituting semiconductor manufacturing equipment;

[0017] Figure 6 is a third exemplary cross-sectional view showing the internal configuration of a substrate processing apparatus constituting semiconductor manufacturing equipment;

[0018] Figure 7 is a first exemplary block diagram showing an internal configuration of an inspection device constituting semiconductor manufacturing equipment;

[0019] Figure 8 is an exemplary schematic diagram illustrating input impedance measurement theory;

[0020] Fig. 9 is a first exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting an inspection device;

[0021] Fig.10 is a second exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting an inspection device;

[0022] Fig.11 is a second exemplary block diagram showing an internal configuration of an inspection device constituting semiconductor manufacturing equipment;

[0023] Fig.12 is a third exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting an inspection device; and

[0024] Fig.13 is a fourth exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting the inspection apparatus. DETAILED DESCRIPTION

[0025] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. The same reference numerals are used for the same components in the drawings, and redundant explanations of these components are omitted.

[0026] When a substrate is processed in equipment using plasma, it is necessary to frequently inspect the equipment using an inspection device to prevent mass production of defective products due to reduced processing efficiency. The following first describes a substrate processing device and a semiconductor manufacturing equipment including the substrate processing device, and then describes an inspection device for inspecting the semiconductor manufacturing equipment.

[0027] Figure 1 is a first exemplary schematic diagram showing the internal configuration of semiconductor manufacturing equipment for processing a substrate. Figure 2 is a second exemplary schematic diagram showing the internal configuration of semiconductor manufacturing equipment for processing a substrate. Figure 3 is a third exemplary schematic diagram showing the internal configuration of semiconductor manufacturing equipment for processing a substrate.

[0028] Reference Figures 1 to 3 , the first direction D1 as a horizontal direction and the second direction D2 form a plane. For example, the first direction D1 may be a front-to-back direction, and the second direction D2 may be a left-to-right direction. Alternatively, the first direction D1 may be a left-to-right direction, and the second direction D2 may be a front-to-back direction. The third direction D3 as a vertical direction is perpendicular to the plane formed by the first direction D1 and the second direction D2. The third direction D3 may be an up-down direction.

[0029] Reference Figures 1 to 3 The semiconductor manufacturing equipment 100 may be configured to include a load port module 110 , an index module 120 , a load lock chamber 130 , a transfer module 140 , and a processing chamber 150 .

[0030] The semiconductor manufacturing equipment 100 is a system for processing a substrate using etching, cleaning and deposition processes. The semiconductor manufacturing equipment 100 may include a single processing chamber, but the present disclosure is not limited thereto. Alternatively, the semiconductor manufacturing equipment 100 may include a plurality of processing chambers. The plurality of processing chambers may include the same type of processing chambers, but the present disclosure is not limited thereto. Alternatively, the plurality of processing chambers may include heterogeneous processing chambers. When the semiconductor manufacturing equipment 100 includes a plurality of processing chambers, the semiconductor manufacturing equipment 100 may be configured as a multi-chamber substrate processing system.

[0031] The load port module 110 is provided to accommodate a container SC loaded with a plurality of substrates. For example, the container SC may be a front opening unified pod (FOUP).

[0032] The container SC may be loaded into or unloaded from the loadport module 110. In addition, substrates stored in the container SC may also be loaded into or unloaded from the loadport module 110.

[0033] When the target to be loaded or unloaded is a container SC, the container transporter can load or unload the container SC. Specifically, the container transporter can load the container SC into the load port module 110 by placing the container SC onto the load port module 110. Also, the container transporter can unload the container SC from the load port module 110 by grabbing the container SC from the load port module 110. Figures 1 to 3 Not shown, but the container transport equipment may be an overhead lift transporter (OHT).

[0034] When the target to be loaded or unloaded is a substrate, the first transport robot 122 may load or unload the substrate into or from the container SC mounted on the load port module 110. Specifically, when unloading a substrate, once the container SC is mounted on the load port module 110, the first transport robot 122 may approach the load port module 110, and then may take out the substrate from the container SC. When loading a substrate, once the processing of the substrate is completed, the first transport robot 122 may retrieve the processed substrate from the load lock chamber 130, and then place the processed substrate in the container SC.

[0035] A plurality of load port modules 110 may be disposed in front of the index module 120. For example, three load port modules, namely a first load port module 110a, a second load port module 110b, and a third load port module 110c, may be disposed in front of the index module 120.

[0036] When a plurality of load port modules 110 are disposed in front of the index module 120, the containers SC on the load port modules 110 may include different types of items. For example, when the first load port module 110a, the second load port module 110b, and the third load port module 110c are disposed in front of the index module 120, the first container SC1 placed on the first load port module 110a may include a wafer-type sensor, the second container SC2 placed on the second load port module 110b may include a substrate or a wafer, and the third container SC3 placed on the third load port module 110c may include consumable parts such as a focus ring, an edge ring, and the like.

[0037] However, the present disclosure is not limited thereto. Optionally, the first container SC1, the second container SC2, and the third container SC3 may include items of the same type. Optionally, some of the first container SC1, the second container SC2, and the third container SC3 may include items of the same type, and other containers may include items of different types.

[0038] The index module 120 may be disposed between the load port module 110 and the load lock chamber 130 , and may be provided as an interface allowing substrates to be transferred between the container SC on the load port module 110 and the load lock chamber 130 .

[0039] The indexing module 120 may include a first module housing 121 and a first transport robot 122. The first transport robot 122 is disposed in the first module housing 121 and may transport substrates between the load port module 110 and the load lock chamber 130. The internal environment of the first module housing 121 is set at atmospheric pressure, thereby allowing the first transport robot 122 to operate under an atmospheric pressure environment. A single first transport robot 122 may be provided in the first module housing 121, but the present disclosure is not limited thereto. Alternatively, a plurality of first transport robots 122 may be provided.

[0040] Despite Figures 1 to 3 Although not shown in the figure, the indexing module 120 may also include a buffer chamber. The buffer chamber may temporarily store unprocessed substrates before transporting them to the load lock chamber 130. Moreover, the buffer chamber may temporarily store processed substrates before transporting them to the container SC on the load port module 110. The buffer chamber may be disposed on a side wall that is not adjacent to the load port module 110 or the load lock chamber 130, but the present disclosure is not limited thereto. Alternatively, the buffer chamber may be disposed on a side wall adjacent to the load port module 110. Alternatively again, the buffer chamber may be disposed on a side wall adjacent to the load lock chamber 130.

[0041] A front end module (FEM) may be disposed at one side of the load lock chamber 130. The FEM may include a load port module 110 and an index module 120, and may be provided as, for example, an equipment FEM (EFEM).

[0042] As mentioned above, a plurality of load port modules 110 may be provided in the semiconductor manufacturing equipment 100. Figures 1 to 3 In the example of FIG. 1 , the load port modules 110 may be arranged in the first direction D1, but the present disclosure is not limited thereto. Alternatively, the load port modules 110 may be stacked in the third direction D3. In the case where the load port modules 110 are stacked vertically, the FEM may be set as a vertically stacked EFEM.

[0043] The load lock chamber 130 may serve as a buffer chamber between the input port and the output port in the semiconductor manufacturing equipment 100. That is, the load lock chamber 130 may temporarily store unprocessed or processed substrates between the load port module 110 and the processing chamber 150. Figures 1 to 3 Although not shown, the load lock chamber 130 may include a buffer stage for temporarily storing substrates.

[0044] A plurality of load lock chambers 130 may be disposed between the index module 120 and the transfer module 140. For example, two load lock chambers, ie, a first load lock chamber 130a and a second load lock chamber 130b, may be disposed between the index module 120 and the transfer module 140.

[0045] The load lock chamber 130 may be arranged in the same direction as the load port module 110. Figures 1 to 3 In the example of FIG. 1 , the first load lock chamber 130a and the second load lock chamber 130b may be arranged in the same direction as the first load port module 110a, the second load port module 110b, and the third load port module 110c, that is, arranged in the first direction D1. The first load lock chamber 130a and the second load lock chamber 130b may be provided in a symmetrical single-layer structure in which they are spaced apart from each other in the horizontal direction.

[0046] However, the present disclosure is not limited thereto. Alternatively, the load lock chamber 130 may be arranged in a direction different from the load port module 110. The first load lock chamber 130a and the second load lock chamber 130b may be arranged between the index module 120 and the transfer module 140 in the third direction D3. The first load lock chamber 130a and the second load lock chamber 130b may be provided in a double-layer structure in which they are spaced apart from each other in the vertical direction.

[0047] One of the first load lock chamber 130a and the second load lock chamber 130b may temporarily store an unprocessed substrate transferred from the index module 120 to the transfer module 140, and the other load lock chamber may temporarily store a processed substrate transferred from the transfer module 140 to the index module 120. However, the present disclosure is not limited thereto. Both the first load lock chamber 130a and the second load lock chamber 130b may perform the function of temporarily storing an unprocessed substrate and a processed substrate.

[0048] The internal environment of the load lock chamber 130 may be changed between a vacuum environment and an atmospheric pressure environment using a gate valve. Specifically, when the first transport robot 122 of the index module 120 loads or unloads a substrate into or from the load lock chamber 130, the load lock chamber 130 may provide an internal environment that is the same as or similar to the internal environment of the index module 120. In addition, when the second transport robot 142 of the transfer module 140 loads or unloads a substrate into or from the load lock chamber 130, the load lock chamber 130 may provide an internal environment that is the same as or similar to the internal environment of the transfer module 140. In this way, the load lock chamber 130 may prevent changes in the internal pressure states of the index module 120 and the transfer module 140.

[0049] The transfer module 140 may be disposed between the load lock chamber 130 and the process chamber 150 , and may be provided as an interface allowing a substrate to be transferred between the load lock chamber 130 and the process chamber 150 .

[0050] The transfer module 140 may include a second module housing 141 and a second transport robot 142. The second transport robot 142 is disposed in the second module housing 141, and may transport the substrate between the load lock chamber 130 and the process chamber 150. The internal environment of the second module housing 141 may be provided as a vacuum environment, and the second transport robot 142 may operate in the vacuum environment. A single second transport robot 142 may be provided in the second module housing 141, but the present disclosure is not limited thereto. Alternatively, a plurality of second transport robots 142 may be provided.

[0051] The transfer module 140 may be connected to a plurality of process chambers 150. To this end, the second module housing 141 may have a plurality of sides, and the second transport robot 142 may be configured to freely move through each side of the second module housing 141 to load or unload a substrate into or from each process chamber 150.

[0052] The process chamber 150 processes a substrate. When an unprocessed substrate is provided, the process chamber 150 may process the substrate and may supply the processed substrate to the load lock chamber 130 via the transfer module 140. The process chamber 150 will be described in more detail later.

[0053] When the semiconductor manufacturing equipment 100 includes a plurality of processing chambers 150, the semiconductor manufacturing equipment 100 may be formed into a cluster platform structure. Figure 1As shown, the processing chambers 150 may be arranged in a cluster around the transfer module 140, but the present disclosure is not limited thereto. Optionally, when the semiconductor manufacturing equipment 100 includes a plurality of processing chambers 150, the semiconductor manufacturing equipment 100 may be formed with a quad platform structure. Figure 2 As shown, the processing chambers 150 may be arranged in a square manner around the transfer module 140. Alternatively, when the semiconductor manufacturing equipment 100 includes a plurality of processing chambers 150, the semiconductor manufacturing equipment 100 may be formed with an in-line platform structure. Figure 3 As shown, the process chambers 150 may be arranged in-line around the transfer module 140 , and two different process chambers 150 may be arranged in series on either side of the transfer module 140 .

[0054] Despite Figures 1 to 3 Although not shown in the figure, the semiconductor manufacturing equipment 100 may further include a control device. The control device controls the overall operation of each component of the semiconductor manufacturing equipment 100. For example, the control device may control the transportation of the substrate by the first transport robot 122 or the second transport robot 142, control the change of the internal environment of the load lock chamber 130, and control the processing of the substrate by the processing chamber 150.

[0055] The control device may include: a processor that performs control on each component of the semiconductor manufacturing equipment 100; a network that communicates with each component of the semiconductor manufacturing equipment 100 in a wired or wireless manner; and a storage device for storing one or more instructions related to the function or operation of each component for controlling the semiconductor manufacturing equipment 100, a processing (or processing) method including the instructions, and various data. In addition, the control device may also include a user interface, and the user interface includes an input device and an output device, the input device is used for an operator to perform a command input operation to manage the semiconductor manufacturing equipment 100, and the output device is used to visualize and display the operating status of the semiconductor manufacturing equipment 100. The control device can be configured as a computing device for data processing and analysis and command delivery.

[0056] Instructions can be provided in the form of a computer program or an application. A computer program can be stored on a computer readable recording medium and can include one or more instructions. Instructions can include codes generated by a compiler, codes executable by an interpreter, etc. The storage device can be provided as one or more storage media selected from flash memory, a hard disk drive (HDD), a solid state drive (SSD), a card-type memory, a random access memory (RAM), a static RAM (SRAM), a read-only memory (ROM), an electrically erasable programmable ROM (EEPROM), a programmable ROM (PROM), a magnetic memory, a magnetic disk, and an optical disk.

[0057] The processing chamber 150 will be described below. The surface of the processing chamber 150 may be formed of alumite with an anodic oxide film, and the interior of the processing chamber 150 may be configured to be airtightly sealed. A plurality of processing chambers 150 may be provided in the semiconductor manufacturing equipment 100, and the processing chambers 150 may be spaced apart from each other around the circumference of the transfer module 140. However, the present disclosure is not limited thereto. Alternatively, a single processing chamber 150 may be provided in the semiconductor manufacturing equipment 100. The processing chamber 150 may be arranged in a cylindrical shape, but the present disclosure is not limited thereto. The processing chamber 150 may also be arranged in other shapes.

[0058] As described above, the processing chamber 150 can process a substrate. The internal structure of the processing chamber 150 will be described below, assuming that the processing chamber 150 is a substrate processing apparatus.

[0059] Figure 4 2 is a cross-sectional view showing the internal configuration of a substrate processing device constituting semiconductor manufacturing equipment. Figure 4 The substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate supporting unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a shower head unit 240, a plasma generating unit 250, a liner unit 260, a window module WM, and an antenna unit 270.

[0060] The substrate processing apparatus 200 may process the substrate W using plasma. The substrate processing apparatus 200 may process the substrate W using a dry method. The substrate processing apparatus 200 may process the substrate W in, for example, a vacuum environment. The substrate processing apparatus 200 may process the substrate W using an etching process. However, the present disclosure is not limited thereto. Alternatively, the substrate processing apparatus 200 may process the substrate W using a deposition or cleaning process.

[0061] The chamber housing CH provides a space in which a process of treating the substrate W using plasma, ie, a plasma process, is performed. The chamber housing CH may be equipped with an exhaust hole 201 at a lower portion thereof.

[0062] The exhaust hole 201 may be connected to an exhaust line 203 equipped with a pump 202. The exhaust hole 201 may exhaust reaction byproducts generated during the plasma process and residual gas within the chamber housing CH to the outside of the chamber housing CH via the exhaust line 203. In this case, the inner space of the chamber housing CH may be decompressed.

[0063] The opening 204 may be formed by penetrating the sidewall of the chamber housing CH. The opening 204 may be provided as a passage for the substrate W to enter and leave the interior of the chamber housing CH. For example, the opening 204 may be configured to be automatically opened and closed by a door assembly 205.

[0064] The door assembly 205 may be configured to include an outer door 206 and a door actuator 207. The outer door 206 may open and close the opening 204 from the outer wall of the chamber housing CH. Under the control of the door actuator 207, the outer door 206 may move in the height direction of the substrate processing apparatus 200, that is, in the third direction D3. The door actuator 207 may be operated using at least one element selected from a motor, a hydraulic cylinder, and a pneumatic cylinder.

[0065] The substrate support unit 210 is installed in the lower region of the chamber housing CH. The substrate support unit 210 may use electrostatic force to attract and support the substrate W, but the present invention is not limited thereto. Alternatively, the substrate support unit 210 may use various other methods (e.g., vacuum, mechanical clamping, etc.) to support the substrate W.

[0066] In the case of supporting the substrate W using electrostatic force, the substrate supporting unit 210 may be configured to include a susceptor 211 and an electrostatic chuck (ESC) 212. The ESC 212 is disposed on the susceptor 211 and may support the substrate W mounted thereon using electrostatic force. The susceptor 211 may be provided as, for example, an aluminum body. The ESC 212 may be formed of, for example, a ceramic material.

[0067] A ring structure 213 is provided to surround an outer edge region of the ESC 212. In the case where a plasma process occurs within a chamber housing CH, the ring structure 213 may be used to focus ions onto a substrate W. The ring structure 213 may be formed of a silicon material. For example, the ring structure 213 may be provided as a focus ring.

[0068] Despite Figure 4 Although not shown in the figure, the substrate processing apparatus 200 may further include an edge ring disposed to surround an outer region of the ring structure 213. The edge ring may prevent the side of the ESC 212 from being damaged by plasma. The edge ring may be formed of, for example, an insulating material such as quartz.

[0069] A heating element 214 and a cooling element 215 are provided to maintain the substrate W at a process temperature when a substrate treatment process is performed in the chamber housing CH. The heating element 214 may be provided as a heating line to raise the temperature of the substrate W. For example, the heating element 214 may be installed in the ESC 212. The cooling element 215 may be provided as a cooling line through which a refrigerant flows to reduce the temperature of the substrate W. For example, the cooling element 215 may be installed in the pedestal 211. A cooler 216 may supply a refrigerant to the cooling element 215. The cooler 216 may use cooling water as a refrigerant, but the present disclosure is not limited thereto. Alternatively, the cooler 216 may also use helium (He) gas as a refrigerant. Alternatively again, the cooler 216 may use only one of cooling water and He gas as a refrigerant.

[0070] The cleaning gas supply unit 220 provides a cleaning gas to the ESC 212 or the ring structure 213 to remove any residual impurities on the ESC 212 or the ring structure 213. For example, the cleaning gas supply unit 220 may provide nitrogen (N 2 ) as a cleaning gas.

[0071] The cleaning gas supply unit 220 may include a cleaning gas supply source 221 and a cleaning gas supply line 222. The cleaning gas supply line 222 may be connected to a space between the ESC 212 and the ring structure 213. The cleaning gas supplied by the cleaning gas supply source 221 may be moved to the space between the ESC 212 and the ring structure 213 through the cleaning gas supply line 222 to remove any impurities remaining on the edge of the ESC 212 or the top of the ring structure 213.

[0072] The process gas supply unit 230 supplies the process gas into the chamber housing CH. The process gas supply unit 230 may supply the process gas through a hole formed to penetrate the top cover of the chamber housing CH (i.e., the window module WM), but the present invention is not limited thereto. Alternatively, the process gas supply unit 230 may supply the process gas through a hole formed to penetrate the side wall of the chamber housing CH.

[0073] The process gas supply unit 230 may include a process gas supply source 231 and a process gas supply line 232. The process gas supply source 231 may provide a gas for processing a semiconductor substrate W as a process gas. A single process gas supply source 231 may be provided in the substrate processing apparatus 200, but the present invention is not limited thereto. Alternatively, a plurality of process gas supply sources 231 may be provided in the substrate processing apparatus 200. In this case, the plurality of process gas supply sources 231 may provide the same type of process gas or different types of process gas.

[0074] The shower head unit 240 sprays the process gas provided by the process gas supply source 231 on the entire area on the semiconductor substrate W located in the inner space of the chamber housing CH. The shower head unit 240 may be connected to the process gas supply source 231 through a process gas supply line 232 .

[0075] The showerhead unit 240 is disposed in the inner space of the chamber housing CH and may include a unit body 241 and a plurality of gas supply holes 242. The gas supply holes 242 may be formed to penetrate the surface of the unit body 241 in the third direction D3. The gas supply holes 242 may be spaced apart from each other at regular intervals on the surface of the unit body 241. The showerhead unit 240 may uniformly spray a process gas over the entire area of ​​the semiconductor substrate W through the gas supply holes 242.

[0076] The shower head unit 240 may be installed in the chamber housing CH to face the substrate support unit 210 in the third direction D3. The shower head unit 240 may be provided with a larger diameter than the ESC 212, but the present disclosure is not limited thereto. Alternatively, the shower head unit 240 may be provided with the same diameter as the ESC 212. The shower head unit 240 may be formed of silicon as a material, but the present disclosure is not limited thereto. Alternatively, the shower head unit 240 may be formed of metal.

[0077] Despite Figure 4 Although not shown in the figure, the nozzle unit 240 can be divided into a plurality of sub-units. For example, the nozzle unit 240 can be divided into three sub-units, namely a first sub-unit, a second sub-unit and a third sub-unit. The first sub-unit can be arranged at a position corresponding to the central area of ​​the semiconductor substrate W. The second sub-unit can be arranged to surround the outer edge of the first sub-unit. The second sub-unit can be arranged at a position corresponding to the middle area of ​​the semiconductor substrate W. The third sub-unit can be arranged to surround the outer edge of the second sub-unit. The third sub-unit can be arranged at a position corresponding to the edge area of ​​the semiconductor substrate W.

[0078] Despite Figure 4 Although not shown in the figure, when the showerhead unit 240 is divided into a plurality of sub-units, the process gas supply unit 230 may further include a process gas distributor and a process gas distribution line to distribute the process gas to each of the sub-units of the showerhead unit 240. The process gas distributor may be installed on the process gas supply line 232, and the process gas distribution line may distribute the process gas supplied from the process gas supply source 231 to each of the sub-units of the showerhead unit 240. The process gas distribution line may be part of the process gas supply line 232, and may connect the process gas distributor to each of the sub-units of the showerhead unit 240.

[0079] The plasma generating unit 250 generates plasma from the gas held in the discharge space. Here, the discharge space may be the inner space of the chamber housing CH and may be formed between the showerhead unit 240 and the window module WM. Alternatively, the discharge space may be formed between the substrate supporting unit 210 and the showerhead unit 240. If the discharge space is formed between the substrate supporting unit 210 and the showerhead unit 240, the discharge space may be divided into a plasma zone and a processing zone. The plasma zone may be formed above the processing zone.

[0080] The plasma generating unit 250 may generate plasma in the discharge space using an inductively coupled plasma (ICP) source. For example, the plasma generating unit 250 may generate plasma in the discharge space using the ESC 212 and the antenna unit 270 as a first electrode (or lower electrode) and a second electrode (or upper electrode), respectively.

[0081] However, the present disclosure is not limited thereto. Alternatively, the plasma generating unit 250 may generate plasma in the discharge space using a capacitively coupled plasma (CCP) source. For example, the plasma generating unit 250 may generate plasma in the discharge space using the ESC 212 and the showerhead unit 240 as a first electrode (or lower electrode) and a second electrode (or upper electrode), respectively. The case where the plasma generating unit 250 uses the CCP source will be described in more detail later.

[0082] The plasma generating unit 250 may be configured to include a first high frequency power source 251 , a first transmission line 252 , a second high frequency power source 253 , and a second transmission line 254 .

[0083] The first high frequency power source 251 applies radio frequency (RF) power to the first electrode. The first high frequency power source 251 may be used as a plasma source to generate plasma in the chamber housing CH.

[0084] A single first high frequency power source 251 may be provided in the substrate processing apparatus 200 , but the present disclosure is not limited thereto. Alternatively, a plurality of first high frequency power sources 251 may be provided in the substrate processing apparatus 200 , in which case the plurality of first high frequency power sources 251 may be arranged in parallel on the first transmission line 252 .

[0085] Despite Figure 4 Although not shown in the figure, when a plurality of first high frequency power sources 251 are provided in the substrate processing apparatus 200, the plasma generating unit 250 may include a first matching network electrically connected to each of the plurality of first high frequency power sources 251. If frequency powers having different amplitudes are input from the plurality of first high frequency power sources 251, the first matching network may match and apply the frequency powers to the first electrode.

[0086] The first transmission line 252 may connect the first electrode and the ground source. The first high frequency power source 251 may be installed on the first transmission line 252, but the present disclosure is not limited thereto. The first transmission line 252 may also connect the first electrode and the first high frequency power source 251. The first transmission line 252 may be provided as, for example, an RF rod.

[0087] Despite Figure 4 Although not shown in the figure, a first impedance matching circuit for impedance matching may be provided on the first transmission line 252, which connects the first high-frequency power source 251 and the first electrode. The first impedance matching circuit may be used as a lossless passive circuit and may enable maximum electric energy to be transferred from the first high-frequency power source 251 to the first electrode.

[0088] The second high frequency power supply 253 applies RF power to the second electrode. The second high frequency power supply 253 can control the plasma characteristics in the chamber housing CH. For example, the second high frequency power supply 253 can adjust the ion bombardment energy in the chamber housing CH.

[0089] A single second high frequency power source 253 may be provided in the substrate processing apparatus 200 , but the present disclosure is not limited thereto. Alternatively, a plurality of second high frequency power sources 253 may be provided in the substrate processing apparatus 200 , in which case the plurality of second high frequency power sources 253 may be arranged in parallel on the second transmission line 254 .

[0090] Despite Figure 4 Although not shown in the figure, when a plurality of second high frequency power sources 253 are provided in the substrate processing apparatus 200, the plasma generating unit 250 may include a second matching network electrically connected to each of the plurality of second high frequency power sources 253. If frequency power having different amplitudes is input from the plurality of second high frequency power sources 253, the second matching network may match and apply the frequency power to the second electrode.

[0091] The second transmission line 254 connects the first electrode and the ground source. The second high frequency power source 253 may be installed on the second transmission line 254.

[0092] Despite Figure 4 Although not shown in the figure, a second impedance matching circuit for impedance matching may be provided on the second transmission line 254, which connects the second high-frequency power source 253 and the second electrode. The second impedance matching circuit may be used as a lossless passive circuit and may enable maximum electric energy to be transferred from the second high-frequency power source 253 to the second electrode.

[0093] Meanwhile, similar to the first high frequency power source 251 , the second high frequency power source 253 may control the plasma characteristics within the chamber housing CH.

[0094] The liner unit 260 (also referred to as a wall liner) protects the inside of the chamber housing CH from arc discharge generated during process gas excitation or from impurities generated during processing of the semiconductor substrate W. The liner unit 260 may be formed to cover the inner wall of the chamber housing CH.

[0095] The liner unit 260 may include a support ring 261 on its body. The support ring 261 may protrude from an upper portion of the body of the liner unit 260 in an outward direction (ie, a first direction D1) and may fix the body of the liner unit 260 to the chamber housing CH.

[0096] The window module WM serves as an upper cover of the chamber housing CH, sealing the internal space of the chamber housing CH. The window module WM can be provided separately from the chamber housing CH, but the present disclosure is not limited thereto. Optionally, the window module WM can be integrated as part of the chamber housing CH. When provided separately from the chamber housing CH, the window module WM can cover the open top of the chamber housing CH. When integrated as part of the chamber housing CH, the window module WM can be provided as an integrated structure with the chamber housing CH.

[0097] The window module WM may be formed as a dielectric window using an insulating material. For example, the window module WM may be formed of aluminum oxide (Al 2 O 3 The window module WM may further include a coating film on a surface thereof to suppress particle formation when a plasma process is performed within the inner space of the chamber housing CH.

[0098] The antenna unit 270 generates a magnetic field and an electric field in the inner space of the chamber housing CH to excite the process gas into plasma. The antenna unit 270 can be operated using the RF power provided from the second high frequency power supply 253. The antenna unit 270 can be set on the chamber housing CH. For example, the antenna unit 270 can be set on the window module WM, but the present disclosure is not limited thereto. Alternatively, the antenna unit 270 can be set on the side wall of the chamber housing CH.

[0099] The antenna unit 270 may include a body 271 and an antenna 272 within the body 271 or on a surface of the body 271. The antenna 272 may be provided to form a closed loop using a coil. The antenna 272 may be formed in various shapes, such as a spiral shape, along the width direction (ie, the first direction D1) of the chamber housing CH.

[0100] The antenna unit 270 may be formed to have a planar structure, but the present disclosure is not limited thereto. Alternatively, the antenna unit 270 may be formed to have a cylindrical structure. When the planar structure is formed, the antenna unit 270 may be disposed on the chamber housing CH. When the cylindrical structure is formed, the antenna unit 270 may be disposed to surround the outer wall of the chamber housing CH.

[0101] So far, reference has been made to Figure 4 The case where the plasma generating unit 250 generates plasma in the discharge space using the ICP source is described. Figure 5 and Figure 6 The description will focus on the case where the plasma generating unit 250 generates plasma in the discharge space using the CCP source, mainly focusing on the Figure 4 The differences in the implementation methods.

[0102] Figure 5is a second exemplary cross-sectional view showing the internal configuration of the substrate processing apparatus constituting the semiconductor manufacturing equipment. Figure 6 is a third exemplary cross-sectional view showing the internal configuration of the substrate processing apparatus constituting the semiconductor manufacturing equipment.

[0103] refer to Figure 5 and Figure 6 , the substrate processing apparatus 200 may be configured to include a chamber housing CH, a substrate supporting unit 210, a cleaning gas supply unit 220, a process gas supply unit 230, a shower head unit 240, a plasma generating unit 250, a liner unit 260, and a window module WM. In other words, Figure 4 Unlike the corresponding portion of the substrate processing apparatus 200 , the substrate processing apparatus 200 may not include the antenna unit 270 .

[0104] refer to Figure 5 , the plasma generating unit 250 may be configured to include a first high frequency power source 251, a first transmission line 252, a second high frequency power source 253, and a second transmission line 254, but the present disclosure is not limited thereto. Figure 6 , the plasma generating unit 250 may be configured to include the first high frequency power source 251 , the first transmission line 252 , and the second transmission line 254 , but not the second high frequency power source 253 .

[0105] refer to Figure 4 , the second transmission line 254 may be connected to the antenna 272 of the antenna unit 270, and the second high frequency power source 253 may apply RF power to the antenna 272 of the antenna unit 270. Figure 5 For example, the second transmission line 254 may be connected to the unit body of the showerhead unit 240 , and the second high frequency power source 253 may apply RF power to the unit body of the showerhead unit 240 .

[0106] exist Figure 5 In the example of , the second high frequency power source 253 may be installed on the second transmission line 254. Figure 6 In the example of , the second high frequency power source 253 may not be installed on the second transmission line 254. If the second high frequency power source 253 is installed on the second transmission line 254, the plasma generating unit 250 may apply a plurality of frequencies to the substrate treating apparatus 200.

[0107] Hereinafter, the inspection apparatus 300 for inspecting the semiconductor manufacturing equipment 100 will be described. The inspection apparatus 300 can inspect the semiconductor manufacturing equipment 100 with high reliability without damaging the semiconductor manufacturing equipment 100.

[0108] Figure 7 1 is a first exemplary block diagram showing the internal configuration of an inspection device constituting semiconductor manufacturing equipment. Figure 7The inspection device 300 may be configured to include a measurement module 310 , an input module 320 , a comparison module 330 , a determination module 340 , a power module 350 , and a main control module 360 ​​.

[0109] The inspection apparatus 300 may inspect the semiconductor manufacturing equipment 100 based on the input impedance measurement theory. For example, the inspection apparatus 300 may inspect the substrate processing apparatus 200 within the semiconductor manufacturing equipment 100 based on the input impedance measurement theory. The inspection apparatus 300 may determine whether the substrate processing apparatus 200 is operating correctly based on the input impedance measurement theory.

[0110] When the terminal resistor is open, the inspection apparatus 300 may inspect the substrate processing apparatus 200 based on the input impedance measurement theory. Figure 8 , the first port 420 may be disposed on one side of the equipment component 410, and the second port 430 may be disposed on the other side of the equipment component 410. Input impedance measurement theory may express the relationship between the impedances measured at the first port 420 and the second port 430 as a mathematical equation. The input impedance measurement theory may be applied to measure the unique characteristics of the equipment component 410 at each of the first port 420 and the second port 430.

[0111] When the resistor installed at the second port 430 is disconnected, the impedance measured at the second port 430 may have an infinite value (∞). In this case, the impedance measured at the first port 420 may be calculated based on the input impedance measurement theory, as shown in equation (1):

[0112] Zin=Z0 / jtan(βl) (1)

[0113] Wherein Zin represents the impedance measured at the first port 420 , Z0 represents the characteristic impedance of the equipment component 410 , β represents the wave propagation constant of the equipment component 410 , and l represents the length of the equipment component 410 . Figure 8 is an exemplary schematic diagram illustrating the input impedance measurement theory.

[0114] The inspection apparatus 300 can inspect the substrate processing apparatus 200 while the substrate processing apparatus 200 is in operation. The inspection apparatus 300 can inspect the substrate processing apparatus 200 without damaging the substrate processing apparatus 200. The inspection apparatus 300 can inspect each equipment component 410 within the substrate processing apparatus 200. Before the equipment component 410 is installed in the substrate processing apparatus 200, the inspection apparatus 300 can inspect the equipment component 410. Before the equipment component 410 is removed from the substrate processing apparatus 200, the inspection apparatus 300 can inspect the equipment component 410. The inspection apparatus 300 can inspect the equipment component 410 when necessary, for example, when it is necessary to inspect the equipment component 410 according to the specification.

[0115] The measurement module 310 may measure a first impedance at a first port 420 of the equipment component 410. The first impedance may be defined by equation (2):

[0116] Z1=R1+jX1 (2)

[0117] Wherein Z1 represents a first impedance, R1 represents a resistance measured at the first port 420, and X1 represents a reactance measured at the first port 420. The resistance and reactance measured at the first port 420 are hereinafter referred to as a first resistance and a first reactance, respectively.

[0118] The measurement module 310 may measure a second impedance at the second port 430 of the equipment component 410. The second impedance may be defined by equation (3):

[0119] Z2=R2+jX2 (3)

[0120] Wherein Z2 represents the second impedance, R2 represents the resistance measured at the second port 430, and X2 represents the reactance measured at the second port 430. The resistance and reactance measured at the second port 430 are hereinafter referred to as the second resistance and the second reactance, respectively.

[0121] The measuring module 310 can measure the first impedance and the second impedance at the same time. In this case, the measuring module 310 may include two impedance meters. Specifically, the measuring module 310 may include a first impedance meter for measuring the first impedance and a second impedance meter for measuring the second impedance, but the present disclosure is not limited thereto. Optionally, the measuring module 310 may first measure one of the first impedance and the second impedance, and then measure the other impedance, in which case the measuring module 310 may include a single impedance meter.

[0122] Whenever the frequency used by the substrate processing apparatus 200 changes, the measurement module 310 may measure the first impedance and the second impedance. For example, when the substrate processing apparatus 200 uses the first frequency, the measurement module 310 may measure the first impedance and the second impedance. After a predetermined amount of time has passed, if the substrate processing apparatus 200 uses a second frequency different from the first frequency, the measurement module 310 may measure the first impedance and the second impedance again. The first frequency and the second frequency may be selected from a range of 1 Hz to 300 MHz.

[0123] The equipment component 410 may be a component installed in the substrate processing apparatus 200. For example, the equipment component 410 may be an RF rod associated with an RF path, a dielectric body, a metal component or element, a cable, etc., but the present disclosure is not limited thereto. In another example, the equipment component 410 may be the substrate processing apparatus 200 itself.

[0124] The input module 320 may receive the first impedance and the second impedance measured by the measurement module 310. The input module 320 may be connected to the measurement module 310 in a wired or wireless manner to receive the first impedance and the second impedance.

[0125] The comparison module 330 may compare the first impedance and the second impedance. For example, the comparison module 330 may compare the first resistance and the second resistance. In addition, the comparison module 330 may compare the first reactance and the second reactance.

[0126] As described above, the first impedance can be calculated by equation (1). If the resistor installed at the second port 430 is disconnected, the first impedance can be calculated based on the characteristic impedance of the equipment component 410, the propagation constant of the equipment component 410, and the length of the equipment component 410. Similarly, if the resistor at the first port 420 is disconnected, the second impedance can also be calculated based on the characteristic impedance of the equipment component 410, the propagation constant of the equipment component 410, and the length of the equipment component 410. Under the assumption that the resistors at the first port 420 and the second port 430 are disconnected, the first impedance and the second impedance can have the same value.

[0127] The comparison module 330 may compare the first impedance and the second impedance using an absolute value comparison method. In this case, the absolute values ​​of the calculated values ​​from the first resistance and the second resistance may be compared with the first reference value, and the absolute values ​​of the calculated values ​​from the first reactance and the second reactance may be compared with the second reference value.

[0128] The comparison module 330 may compare the first impedance and the second impedance using a differential comparison method. In this case, the difference between the first resistance and the second resistance may be compared with a third reference value, and the difference between the first reactance and the second reactance may be compared with a fourth reference value.

[0129] The determination module 340 may determine whether there is an abnormality in the equipment component 410 based on the result obtained by comparing the first impedance and the second impedance. As described above, the comparison module 330 may compare the first impedance and the second impedance using an absolute value comparison method or a difference comparison method. The determination module 340 may determine whether there is an abnormality in the equipment component 410 considering the type of comparison method used by the comparison module 330.

[0130] When the comparison module 330 uses the absolute value comparison method to compare the first impedance and the second impedance, the determination module 340 can determine whether there is an abnormality in the equipment component 410 based on whether the absolute value of the calculated value from the first resistance and the second resistance is less than or equal to the first reference value. Here, the value calculated from the first resistance and the second resistance may be the difference between the first resistance and the second resistance, or may be a maximum value or a minimum value selected from between the first resistance and the second resistance.

[0131] The determination module 340 may determine whether an abnormality exists in the equipment component 410 based on equation (4):

[0132] |R1, R2|≤a (4)

[0133] Where R1 and R2 represent the first resistor and the second resistor, respectively, |R1, R2| represents the absolute value of the value calculated from the first resistor and the second resistor R1 and R2, and a represents the first reference value. If the absolute value of the calculated value from the first resistor and the second resistor is equal to or less than the first reference value, the determination module 340 can determine that there is no abnormality in the equipment component 410. On the contrary, if the absolute value of the calculated value from the first resistor and the second resistor is greater than the first reference value, the determination module 340 can determine that there is an abnormality in the equipment component 410.

[0134] When the comparison module 330 compares the first impedance and the second impedance using the absolute value comparison method, the determination module 340 may determine whether there is an abnormality in the equipment component 410 based on whether the absolute value of the calculated value from the first reactance and the second reactance is less than or equal to the second reference value. Here, the value calculated from the first reactance and the second reactance may be the difference between the first reactance and the second reactance, or may be a maximum value or a minimum value selected from between the first reactance and the second reactance.

[0135] The determination module 340 may determine whether an abnormality exists in the equipment component 410 based on equation (5):

[0136] |X1, X2|≤b (5)

[0137] Where X1 and X2 represent the first reactance and the second reactance, respectively, |X1,X2| represents the absolute value of the calculated value from the first reactance X1 and the second reactance X2, and b represents the second reference value. If the absolute value of the calculated value from the first reactance and the second reactance is equal to or less than the second reference value, the determination module 340 can determine that there is no abnormality in the equipment component 410. On the contrary, if the absolute value of the calculated value from the first reactance and the second reactance is greater than the second reference value, the determination module 340 can determine that there is an abnormality in the equipment component 410.

[0138] The determination module 340 may consider equations (4) and (5) to determine whether an abnormality exists in the equipment component 410. Fig. 9 , if the absolute value of the calculated value from the first resistance and the second resistance is less than or equal to the first reference value (S501) and the absolute value of the calculated value from the first reactance and the second reactance is less than or equal to the second reference value (S502), the determination module 340 can determine that there is no abnormality in the equipment component 410 (S503). That is, if both equations (4) and (5) are satisfied (S501 and S502), the determination module 340 can determine that there is no abnormality in the equipment component 410 (S503).

[0139] On the contrary, if the absolute value of the calculated value from the first resistance and the second resistance is less than or equal to the first reference value (S501), but the absolute value of the calculated value from the first reactance and the second reactance exceeds the second reference value (S502), the determination module 340 may determine that an abnormality exists in the equipment component 410 (S504). Alternatively, if the absolute value of the calculated value from the first reactance and the second reactance is less than or equal to the second reference value, but the absolute value of the calculated value from the first resistance and the second resistance exceeds the first reference value, the determination module 340 may determine that an abnormality exists in the equipment component 410 (S504). Further alternatively, if the absolute value of the calculated value from the first resistance and the second resistance and the absolute value of the calculated value from the first reactance and the second reactance exceed the first reference value and the second reference value, respectively, the determination module 340 may determine that an abnormality exists in the equipment component 410 (S504). That is, if any one of equations (4) and (5) (S501, S502) is not satisfied, the determination module 340 may determine that an abnormality exists in the equipment component 410 (S504). Fig. 9 is a first exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting an inspection device.

[0140] The determination module 340 may consider each of equations (4) and (5) to determine whether an abnormality exists in the equipment component 410. Fig.10 , if the absolute value of the calculated value from the first resistance and the second resistance exceeds the first reference value (S511), and the absolute value of the calculated value from the first reactance and the second reactance exceeds the second reference value (S512), the determination module 340 may determine that an abnormality exists in the equipment component 410 (S514). That is, if neither equation (4) nor (5) is satisfied (S511 and S512), the determination module 340 may determine that an abnormality exists in the equipment component 410 (S514).

[0141] On the contrary, if the absolute value of the calculated value from the first resistance and the second resistance exceeds the first reference value (S511), but the absolute value of the calculated value from the first reactance and the second reactance is less than or equal to the second reference value (S512), the determination module 340 may determine that there is no abnormality in the equipment component 410 (S513). Alternatively, if the absolute value of the calculated value from the first reactance and the second reactance exceeds the second reference value, but the absolute value of the calculated value from the first resistance and the second resistance is less than or equal to the first reference value, the determination module 340 may determine that there is no abnormality in the equipment component 410. Alternatively, if the absolute value of the calculated value from the first resistance and the second resistance and the absolute value of the calculated value from the first reactance and the second reactance are respectively less than or equal to the first reference value and the second reference value, the determination module 340 may determine that there is no abnormality in the equipment component 410. That is, if any one of equations (4) and (5) is satisfied (S511 and S512), the determination module 340 may determine that there is no abnormality in the equipment component 410 (S513). Fig.10 is a second exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting the inspection apparatus.

[0142] The inspection device 300 may determine the first reference value and the second reference value to determine whether there is an abnormality in the equipment component 410. The inspection device 300 may further include a reference value determination module 370. Fig.11 is a second exemplary block diagram showing the internal configuration of inspection equipment for semiconductor manufacturing equipment.

[0143] The reference value determination module 370 may determine a first reference value. The reference value determination module 370 may also determine a second reference value. The reference value determination module 370 may set the first reference value and the second reference value to be different. The reference value determination module 370 may determine the first reference value and the second reference value differently based on the shape, length, and material of the equipment component 410. The reference value determination module 370 may determine the first reference value differently based on the frequency value. Similarly, the reference value determination module 370 may determine the second reference value differently based on the frequency value.

[0144] If the comparison module 330 compares the first impedance and the second impedance using a difference comparison method, the determination module 340 may determine whether an abnormality exists in the equipment component 410 based on whether the difference between the first impedance and the second impedance is less than or equal to a third reference value.

[0145] The determination module 340 may determine whether an abnormality exists in the equipment component 410 based on equation (6):

[0146] (R1-R2)≤c (6)

[0147] Wherein (R1-R2) represents the difference between the first resistor and the second resistor R1 and R2, and c represents the third reference value. If the difference between the first resistor and the second resistor is equal to or less than the third reference value, the determination module 340 can determine that there is no abnormality in the equipment component 410. On the contrary, if the difference between the first resistor and the second resistor is greater than the third reference value, the determination module 340 can determine that there is an abnormality in the equipment component 410.

[0148] Meanwhile, instead of the difference between the first resistor and the second resistor (ie, (R1-R2)), a maximum value or a minimum value selected between the first resistor and the second resistor (ie, Max(R1, R2) or Min(R1, R2)) may also be applied to equation (6).

[0149] If the comparison module 330 compares the first impedance and the second impedance using a difference comparison method, the determination module 340 may determine whether there is an abnormality in the equipment component 410 based on whether the difference between the first reactance and the second reactance is less than or equal to a fourth reference value.

[0150] The determination module 340 may determine whether an abnormality exists in the equipment component 410 based on equation (7):

[0151] (X1-X2)≤d (7)

[0152] Wherein (X1-X2) represents the difference between the first reactance and the second reactance X1 and X2, and d represents the fourth reference value. If the difference between the first reactance and the second reactance is equal to or less than the fourth reference value, the determination module 340 can determine that there is no abnormality in the equipment component 410. On the other hand, if the difference between the first reactance and the second reactance is greater than the fourth reference value, the determination module 340 can determine that there is an abnormality in the equipment component 410.

[0153] Meanwhile, instead of the difference between the first reactance and the second reactance (i.e., (X1-X2)), a maximum value or a minimum value selected between the first reactance and the second reactance (i.e., Max(X1, X2) or Min(X1, X2)) may also be applied to equation (7).

[0154] The determination module 340 may consider equations (6) and (7) to determine whether an abnormality exists in the equipment component 410. Fig.12 , if the difference between the first resistance and the second resistance is less than or equal to the third reference value (S521), and the difference between the first reactance and the second reactance is less than or equal to the fourth reference value (S522), the determination module 340 can determine that there is no abnormality in the equipment component 410 (S523). In other words, if equations (6) and (7) are satisfied (S521 and S522), the determination module 340 can determine that there is no abnormality in the equipment component 410 (S523).

[0155] On the other hand, if the difference between the first resistance and the second resistance is less than or equal to the third reference value (S521), but the difference between the first reactance and the second reactance exceeds the fourth reference value (S522), the determination module 340 may determine that an abnormality exists in the equipment component 410 (S524). Alternatively, if the difference between the first reactance and the second reactance is less than or equal to the fourth reference value, but the difference between the first resistance and the second resistance exceeds the third reference value, the determination module 340 may determine that an abnormality exists in the equipment component 410. Alternatively, if the difference between the first resistance and the second resistance and the difference between the first reactance and the second reactance exceed the third reference value and the fourth reference value, respectively, the determination module 340 may determine that an abnormality exists in the equipment component 410. That is, if any one of equations (6) and (7) is not satisfied (S521 and S522), the determination module 340 may determine that an abnormality exists in the equipment component 410 (S524). Fig.12 is a third exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting the inspection apparatus.

[0156] The determination module 340 may consider each of equations (6) and (7) to determine whether an abnormality exists in the equipment component 410. Fig.13 , if the difference between the first resistance and the second resistance exceeds the third reference value (S531), and the difference between the first reactance and the second reactance exceeds the fourth reference value (S532), the determination module 340 may determine that an abnormality exists in the equipment component 410 (S534). That is, if equations (6) and (7) are not satisfied at the same time (S531 and S532), the determination module 340 may determine that an abnormality exists in the equipment component 410 (S534).

[0157] On the contrary, if the difference between the first resistance and the second resistance exceeds the third reference value (S531), but the difference between the first reactance and the second reactance is less than or equal to the fourth reference value (S532), the determination module 340 may determine that there is no abnormality in the equipment component 410 (S533). Alternatively, if the difference between the first reactance and the second reactance exceeds the fourth reference value, but the difference between the first resistance and the second resistance is less than or equal to the third reference value, the determination module 340 may determine that there is no abnormality in the equipment component 410. Alternatively, if the difference between the first resistance and the second resistance and the difference between the first reactance and the second reactance are less than or equal to the third reference value and the fourth reference value, respectively, the determination module 340 may determine that there is no abnormality in the equipment component 410. In other words, if any one of equations (6) and (7) is satisfied (S531, S532), the determination module 340 may determine that there is no abnormality in the equipment component 410 (S533). Fig.13 is a fourth exemplary flowchart illustrating a method of determining whether an abnormality exists in an equipment component, performed by a determination module constituting the inspection apparatus.

[0158] The reference value determination module 370 may determine the third reference value and the fourth reference value. The reference value determination module 370 may determine the third reference value and the fourth reference value in the same manner as the first reference value and the second reference value. For example, the reference value determination module 370 may determine the third reference value and the fourth reference value differently based on the shape, length, and material of the equipment component 410. In addition, the reference value determination module 370 may determine the third reference value and the fourth reference value differently based on the frequency used.

[0159] Reference again Figure 7 , the power module 350 can provide power to the input module 320, the comparison module 330, the determination module 340, the reference value determination module 370 and the main control module 360 ​​to ensure their smooth operation, but the present disclosure is not limited thereto. The power module 350 can also provide power to the measurement module 310. The power module 350 can provide power to the measurement module 310 in a wired or wireless manner.

[0160] The main control module 360 ​​can control the overall operation of the input module 320, the comparison module 330, the determination module 340, the power module 350 and the reference value determination module 370 to ensure their smooth operation, but the present disclosure is not limited thereto. The main control module 360 ​​can also control the overall operation of the measurement module 310.

[0161] The input module 320, the comparison module 330, the determination module 340, the reference value determination module 370, the power module 350 and the main control module 360 ​​may be provided as a computing device similar to a control device for transmission, analysis and processing of data. In other words, the input module 320, the comparison module 330, the determination module 340, the reference value determination module 370, the power module 350 and the main control module 360 ​​may be provided as a computing device including a processor, a network, an instruction, a memory device and a user interface.

[0162] The embodiments of the present disclosure have been described above with reference to the accompanying drawings, but the present disclosure is not limited thereto and can be implemented in various different forms. It will be understood that the present disclosure can be implemented in other specific forms without changing the technical concepts or key points of the present disclosure. Therefore, it should be understood that the embodiments set forth herein are illustrative and not restrictive in all aspects.

Claims

1. An inspection device, comprising: a measurement module configured to measure a first impedance at a first port on one side of an equipment component provided in a substrate processing apparatus, and a second impedance at a second port on the other side of the equipment component; a comparison module, configured to compare the first impedance and the second impedance; as well as a determination module configured to determine whether the equipment component is operating correctly based on a comparison result of the first impedance and the second impedance, in, The first impedance includes a first resistance and a first reactance, The second impedance includes a second resistance and a second reactance, and The determination module determines whether the equipment component is operating properly based on at least one of a comparison result of the first resistance and the second resistance and a comparison result of the first reactance and the second reactance.

2. The inspection device according to claim 1, wherein: The measurement module measures a characteristic impedance of the equipment component at the first port as the first impedance.

3. The inspection device according to claim 2, wherein: The measuring module measures the first impedance at the first port when the resistor installed at the second port is disconnected.

4. The inspection device according to claim 1, wherein: The measurement module measures a characteristic impedance of the equipment component at the second port as the second impedance.

5. The inspection device according to claim 4, wherein: The measuring module measures the second impedance at the second port when the resistor installed at the first port is disconnected.

6. The inspection device according to claim 1, wherein: The measuring module measures the first impedance and the second impedance whenever a frequency used by the substrate processing apparatus changes.

7. The inspection device according to claim 1, wherein: The comparison module compares the first impedance and the second impedance using one of an absolute value comparison method and a difference comparison method.

8. The inspection device according to claim 7, wherein: The absolute value comparison method compares the absolute value of the calculated value from the first resistance and the second resistance with a first reference value, and compares the absolute value of the calculated value from the first reactance and the second reactance with a second reference value.

9. The inspection device according to claim 7, wherein: The difference comparison method compares a difference between the first resistance and the second resistance with a third reference value, and compares a difference between the first reactance and the second reactance with a fourth reference value.

10. The inspection device according to claim 1, wherein: The determination module determines whether the equipment component is operating normally based on at least one of a first condition and a second condition, The first condition is whether a comparison result of the first resistance and the second resistance is equal to or less than a first reference value or a third reference value, and The second condition is whether a comparison result of the first reactance and the second reactance is equal to or smaller than a second reference value or a fourth reference value.

11. The inspection device according to claim 10, wherein: If both the first condition and the second condition are satisfied, the determination module determines that the equipment component is operating properly.

12. The inspection device according to claim 10, wherein: The determination module determines that the equipment component is operating properly if at least one of the first condition and the second condition is satisfied.

13. The inspection device according to claim 10, wherein: The comparison result of the first resistance and the second resistance is an absolute value from the calculated values ​​of the first resistance and the second resistance, or a difference between the first resistance and the second resistance.

14. The inspection device according to claim 13, wherein: The calculated value from the first resistance and the second resistance is a difference between the first resistance and the second resistance, or a maximum value or a minimum value selected from between the first resistance and the second resistance.

15. The inspection device according to claim 10, wherein: The comparison result of the first reactance and the second reactance is an absolute value from calculated values ​​of the first reactance and the second reactance, or a difference between the first reactance and the second reactance.

16. The inspection device according to claim 15, wherein: The calculated value from the first reactance and the second reactance is a difference between the first reactance and the second reactance, or a maximum value or a minimum value selected from between the first reactance and the second reactance.

17. The inspection device according to claim 10, further comprising: The reference value determination module is configured to determine the first reference value, the second reference value, the third reference value and the fourth reference value.

18. The inspection device according to claim 17, wherein: The reference value determination module determines the first reference value, the second reference value, the third reference value, and the fourth reference value differently according to a frequency used by the substrate processing apparatus.

19. A semiconductor manufacturing equipment, comprising: a substrate processing apparatus configured to process a substrate using plasma; as well as an inspection device configured to determine whether equipment components in the substrate processing device are operating properly; in, The inspection device includes: a measuring module configured to measure a first impedance at a first port on one side of an equipment component provided in a substrate processing device, and a second impedance at a second port on the other side of the equipment component; a comparing module configured to compare the first impedance and the second impedance; and a determining module configured to determine whether the equipment component is operating correctly based on a comparison result of the first impedance and the second impedance. The first impedance includes a first resistance and a first reactance, The second impedance includes a second resistance and a second reactance, and The determination module determines whether the equipment component is operating properly based on at least one of a comparison result of the first resistance and the second resistance and a comparison result of the first reactance and the second reactance.

20. An inspection device for inspecting equipment components in a substrate processing device based on input impedance measurement theory, the inspection device comprising: a measurement module configured to measure a first impedance at a first port disposed on one side of the equipment component and a second impedance at a second port disposed on another side of the equipment component; a comparison module, configured to compare the first impedance and the second impedance; as well as a determination module configured to determine whether the equipment component is operating correctly based on a comparison result of the first impedance and the second impedance, in, The first impedance includes a first resistance and a first reactance, The second impedance includes a second resistance and a second reactance, The comparison module compares the first resistance and the second resistance, and compares the first reactance and the second reactance using one of an absolute value comparison method and a difference comparison method, The determination module determines whether the equipment component is operating normally based on at least one of a first condition and a second condition, The first condition is whether a comparison result of the first resistor and the second resistor is equal to or less than a first reference value or a third reference value, The second condition is whether a comparison result of the first reactance and the second reactance is equal to or smaller than a second reference value or a fourth reference value, and If both the first condition and the second condition are satisfied, the determination module determines that the equipment component is operating properly.

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