Temperature compensation method and device and semiconductor machine table

Abstract

The invention discloses a temperature compensation method and device and a semiconductor machine, and the method comprises the steps: building measurement point sets on a to-be-heated wafer, and enabling each measurement point set to comprise a plurality of measurement points located on the circumference of the same measurement radius; acquiring an actual characteristic parameter value of each measurement point, wherein the actual characteristic parameter value is used for representing temperature information at the measurement point; for each measurement point set, determining a standard characteristic parameter value and sensitivity corresponding to each measurement point set based on a corresponding relationship between the measurement radius and the standard characteristic parameter value and the sensitivity; and determining a target compensation value corresponding to the measurement point set according to each actual characteristic parameter value corresponding to the measurement point set, the standard characteristic parameter value and the sensitivity, and adjusting the temperature according to the target compensation value. When the chamber temperature drift phenomenon occurs, the method of determining the target compensation value through the plurality of characteristic parameter values can reduce the temperature measurement error and improve the accuracy of temperature compensation, thereby improving the utilization rate of a semiconductor machine.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular to a temperature compensation method, device and semiconductor machine. Background Art

[0002] With the development of the semiconductor industry, the characteristic size of semiconductor devices is continuously reduced in proportion. In order to improve the performance of semiconductor devices, a rapid thermal annealing (RTA) process is usually used to process wafers. Among them, a rapid thermal annealing device is a device used to implement a rapid thermal annealing process. The device is generally divided into two types, one is a double-sided heating rapid thermal annealing device, the heat source of which is a lamp tube and a single-point temperature measurement technology is used; the other is a single-sided heating rapid thermal annealing device, the heat source of which is a point light source, such as a light bulb, and a multi-point temperature measurement technology is used.

[0003] The single-sided heating rapid thermal annealing equipment measures the temperature of each area of ​​the wafer through multiple pyrometers (probes), so that the temperature controller adjusts the power of the heating device in the single-sided heating rapid thermal annealing equipment according to the measured temperature and the preset temperature value, thereby achieving the purpose of temperature compensation. However, as the number of wafers processed by the single-sided heating rapid thermal annealing equipment increases, the cavity of the equipment will be affected by the adhesion of particles, resulting in deviations in the temperature measured by the pyrometer, and the inability to accurately adjust the power of the heating device, thereby deteriorating the rapid thermal annealing effect of the wafer, thereby affecting the performance of the semiconductor device. Summary of the invention

[0004] The present application provides a temperature compensation method, device and semiconductor machine to solve the problem in the prior art that the temperature measured by a pyrometer is deviated due to the influence of microparticle adhesion inside the cavity of the semiconductor machine.

[0005] In a first aspect, an embodiment of the present application provides a temperature compensation method, comprising:

[0006] Establishing a set of measurement points on the wafer to be heated, each of the measurement point sets comprising a plurality of measurement points located on a circumference of the same measurement radius;

[0007] Acquire an actual characteristic parameter value of each of the measurement points, wherein the actual characteristic parameter value is used to characterize the temperature information at the measurement point;

[0008] For each of the measurement point sets, based on the corresponding relationship between the measurement radius and the standard characteristic parameter value and the sensitivity, determine the standard characteristic parameter value and the sensitivity corresponding to each of the measurement point sets, wherein the sensitivity is used to characterize the relationship between the change value of the heating temperature and the change value of the actual characteristic parameter value;

[0009] According to each of the actual characteristic parameter values, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set, a target compensation value corresponding to the measurement point set is determined, and temperature adjustment is performed according to the target compensation value.

[0010] In the temperature compensation method provided in the embodiment of the present application, after establishing a set of measurement points on the wafer to be heated, the actual characteristic parameter value of each measurement point is obtained, and based on the corresponding relationship between the measurement radius and the standard characteristic parameter value and sensitivity, the standard characteristic parameter value and sensitivity corresponding to each measurement point set are determined, thereby determining the target compensation value corresponding to each measurement point set, and adjusting the temperature according to the target compensation value. In the case of temperature drift in the chamber of a semiconductor machine, the method of determining the target compensation value through the actual characteristic parameter values ​​of multiple measurement points can reduce the temperature measurement error, improve the accuracy of temperature compensation, and thus improve the utilization rate of the semiconductor machine. At the same time, compared with the method in which the staff adjusts the machine at the semiconductor machine end according to the target compensation value, this method reduces human intervention, avoids the risk of misoperation caused by human intervention, realizes automatic control of the semiconductor machine, and improves the production efficiency of the semiconductor machine.

[0011] In an optional implementation, determining the target compensation value corresponding to the measurement point set according to each of the actual characteristic parameter values, the standard characteristic parameter value, and the sensitivity corresponding to the measurement point set includes:

[0012] Calculating an average value of the actual characteristic parameter values ​​corresponding to a plurality of the measurement points in the measurement point set;

[0013] The difference between the average value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

[0014] The above method determines the target compensation value corresponding to each measurement point set through each actual characteristic parameter value, standard characteristic parameter value and sensitivity in each measurement point set. The target compensation value is used to compensate the temperature of the heating unit corresponding to the measurement point set, thereby maintaining the heating temperature of the semiconductor machine at the target temperature and improving the heating effect of the semiconductor machine on the wafer to be heated.

[0015] In an optional implementation, if the number of measurement points in the measurement point set is an odd number, determining the target compensation value corresponding to the measurement point set according to each of the actual characteristic parameter values, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set includes:

[0016] Determine a median value of the actual characteristic parameter values ​​corresponding to a plurality of the measurement points in the measurement point set;

[0017] The difference between the median value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

[0018] The above method determines the target compensation value corresponding to each measurement point set through each actual characteristic parameter value, standard characteristic parameter value and sensitivity in each measurement point set. The target compensation value is used to compensate the temperature of the heating unit corresponding to the measurement point set, thereby maintaining the heating of the semiconductor machine at the target temperature and improving the heating effect of the semiconductor machine on the wafer to be heated.

[0019] In an optional embodiment, the heating device for the wafer to be heated includes multiple groups of heating units, and the number of the measurement point sets is the same as the number of groups of the heating units.

[0020] In an optional implementation, the number of measurement points in each of the measurement point sets is a preset number, or the number of measurement points in each of the measurement point sets is positively correlated with the size of the measurement radius.

[0021] The above method can set each measurement point set to include a preset number of measurement points, so as to achieve the measurement effect through fewer measurement points and improve the utilization rate of the semiconductor machine; it can also set the number of measurement points in each measurement point set to be proportional to the measurement radius corresponding to the measurement point set, that is, the larger the measurement radius, the greater the number of measurement points in the measurement point set with the measurement radius, thereby improving the measurement accuracy, thereby reducing the temperature measurement error and improving the accuracy of temperature compensation.

[0022] In an optional implementation, for each of the measurement point sets, a plurality of the measurement points are evenly distributed or randomly distributed on the circumference.

[0023] The above method, by evenly arranging multiple measurement points in each measurement point set on the circumference corresponding to the measurement point set, makes each actual characteristic parameter value in each measurement point set better reflect the characteristic parameters of each area of ​​the wafer to be heated, thereby reducing the temperature measurement error and improving the accuracy of temperature compensation.

[0024] In an optional implementation, the actual characteristic parameter value and the standard characteristic parameter value include a sheet resistance value or a film thickness value.

[0025] In a second aspect, an embodiment of the present application provides a temperature compensation device, comprising:

[0026] A measurement point determination module, used to establish a set of measurement points on the wafer to be heated, each of which includes a plurality of measurement points located on a circle with the same measurement radius;

[0027] An information acquisition module, used to acquire an actual characteristic parameter value of each of the measurement points, the actual characteristic parameter value being used to characterize the temperature information at the measurement point; and for each of the measurement point sets, used to determine a standard characteristic parameter value and a sensitivity corresponding to each of the measurement point sets based on a correspondence between the measurement radius and the standard characteristic parameter value and a sensitivity, the sensitivity being used to characterize a relationship between a change value of the heating temperature and a change value of the actual characteristic parameter value;

[0028] A temperature compensation module, used to determine a target compensation value corresponding to the measurement point set according to the actual characteristic parameter value, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set;

[0029] A control module is used to adjust the temperature according to the target compensation value.

[0030] In an optional implementation, the temperature compensation module is specifically used for:

[0031] Calculating an average value of the actual characteristic parameter values ​​of a plurality of the measurement points in the measurement point set;

[0032] The difference between the average value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

[0033] In an optional implementation, the temperature compensation module is specifically used for:

[0034] Determine a median value of the actual characteristic parameter values ​​corresponding to a plurality of the measurement points in the measurement point set;

[0035] The difference between the median value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

[0036] In an optional embodiment, the heating device for the wafer to be heated includes multiple groups of heating units, and the number of the measurement point sets is the same as the number of groups of the heating units.

[0037] In an optional implementation, the number of measurement points in each of the measurement point sets is a preset number, or the number of measurement points in each of the measurement point sets is positively correlated with the size of the measurement radius.

[0038] In an optional implementation, for each of the measurement point sets, a plurality of the measurement points are evenly distributed or randomly distributed on the circumference.

[0039] In an optional implementation, the actual characteristic parameter value and the standard characteristic parameter value include a sheet resistance value or a film thickness value.

[0040] In a third aspect, an embodiment of the present application provides a semiconductor machine, comprising a heating device and a temperature compensation device as described in the second aspect above, wherein the semiconductor machine is used to obtain the target compensation value and adjust the heating power of the heating device in the semiconductor machine according to the target compensation value when heating a wafer to be heated.

[0041] In a fourth aspect, an embodiment of the present application provides a computer-readable storage medium, wherein the computer-readable storage medium stores computer instructions. When the computer instructions are executed on a computer, the computer executes the steps of the temperature compensation method as described in any one of the embodiments in the first aspect above.

[0042] For the technical effects that may be achieved by the temperature compensation device disclosed in the second aspect, the semiconductor machine disclosed in the third aspect, and the computer-readable storage medium disclosed in the fourth aspect, please refer to the technical effects that can be achieved by the first aspect or various possible schemes in the first aspect, and no further details will be given here. BRIEF DESCRIPTION OF THE DRAWINGS

[0043] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0044] Figure 1 A schematic diagram of a temperature compensation method according to an embodiment of the present invention;

[0045] Figure 2 A schematic diagram of a temperature compensation method provided in an embodiment of the present application;

[0046] Figure 3 A schematic diagram of the structure of a rapid thermal annealing machine provided in an embodiment of the present application;

[0047] Figure 4A schematic diagram of the distribution of measurement points provided in an embodiment of the present application;

[0048] Figure 5 A schematic diagram of another distribution of measurement points provided in an embodiment of the present application;

[0049] Figure 6 A complete flow chart of a temperature compensation method provided in an embodiment of the present application;

[0050] Figure 7 A schematic diagram of the module structure of a temperature compensation device provided in an embodiment of the present application;

[0051] Figure 8 A schematic diagram of the structure of an advanced process control system provided in an embodiment of the present application;

[0052] Fig. 9 A schematic diagram of a program product of a temperature compensation method provided in an embodiment of the present application. DETAILED DESCRIPTION

[0053] In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of the present application.

[0054] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present application. On the contrary, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the attached claims.

[0055] In the manufacturing process of semiconductor devices, a rapid thermal annealing machine is a commonly used device in the annealing process. However, due to factors such as wafer count, the interior of the chamber of the rapid thermal annealing machine will be affected by the adhesion of particles, resulting in the occurrence of chamber temperature drift, causing the temperature measured by the pyrometer in the rapid thermal annealing machine to deviate, thereby affecting the annealing effect of the rapid thermal annealing machine on the heated wafer.

[0056] Based on this, the embodiments of the present application provide a temperature compensation method, device and semiconductor machine to improve the temperature measurement error caused by the temperature drift phenomenon and improve the efficiency of the semiconductor machine.

[0057] The technical solution in this application will be described below in conjunction with the accompanying drawings:

[0058] Figure 1 A schematic diagram of a temperature compensation method according to an embodiment of the present invention is shown. Figure 1 As shown, in this application scenario, the semiconductor machine 10 includes an advanced process control (APC) system 101, a measuring device 102 and a heating device 103, wherein the semiconductor machine 10 can work in the following manner:

[0059] The advanced process control system 101 establishes a set of measurement points on the wafer to be heated, and transmits the set of measurement points to the measurement device 102;

[0060] The measuring device 102 measures the actual characteristic parameters of the heated wafer according to the received measuring point set, obtains a plurality of actual characteristic parameter values ​​of each measuring point set, and transmits all the measured actual characteristic parameter values ​​to the advanced process control system 101;

[0061] After the advanced process control system 101 obtains the above-mentioned actual characteristic value parameters, it determines the target compensation value corresponding to each measurement point set according to the temperature compensation method provided in the embodiment of the present application, and when heating the wafer to be heated, it adjusts the heating power of the heating device 103 according to the target compensation value, thereby achieving the purpose of adjusting the heating temperature of the semiconductor machine 10.

[0062] It should be noted that the semiconductor machine 10 in the embodiment of the present application may be a rapid thermal annealing machine, or may be other semiconductor machines with a heating device, and the embodiment of the present application does not impose any limitation on this.

[0063] In another application scenario of the temperature compensation method provided in an embodiment of the present application, a semiconductor machine 10 is communicatively connected to an advanced process control system 101 , wherein the semiconductor machine 10 includes a measuring device 102 and a heating device 103 .

[0064] In a specific implementation, the measurement device 102 in the semiconductor machine 10 measures the actual characteristic parameters of the heated wafer according to the established measurement point set, obtains multiple actual characteristic parameter values ​​of each measurement point set, and transmits all the measured actual characteristic parameter values ​​to the advanced process control system 101;

[0065] The advanced process control system 101 establishes a set of measurement points on the wafer to be heated, and transmits the set of measurement points to the measurement device 102; and after obtaining the above-mentioned actual characteristic value parameters, determines the target compensation value corresponding to each set of measurement points according to the temperature compensation method provided in the embodiment of the present application, and generates a control instruction for controlling temperature regulation according to the target compensation value;

[0066] The heating device 103 in the semiconductor machine 10 adjusts its own heating power according to the control instruction when heating the wafer to be heated, thereby achieving the purpose of adjusting the heating temperature of the semiconductor machine 10 .

[0067] The following embodiments are all described by taking the semiconductor machine as a rapid thermal annealing machine as an example:

[0068] The temperature compensation method provided by the embodiment of the present application is described below through specific embodiments. Figure 2 As shown, the method comprises the following steps:

[0069] Step S201, establishing a set of measurement points on the wafer to be heated, each set of measurement points including a plurality of measurement points located on a circle with the same measurement radius;

[0070] In an optional embodiment, the heating device for the wafer to be heated includes multiple groups of heating units, and the number of the measurement point sets is the same as the number of groups of heating units.

[0071] In a specific implementation, a heating device for heating a wafer to be heated is provided in the rapid thermal annealing machine, and the heating device includes a plurality of heating units, each of which is used to heat different regions of the wafer to be heated, and a pyrometer (probe) is provided at a designated position of each heating unit, and the pyrometer is used to measure in real time the temperature of the region of the wafer to be heated corresponding to each heating unit. In the embodiment of the present application, a set of measurement points corresponding to each heating unit group can be determined according to the positions of the plurality of pyrometers, that is, the distances between the plurality of pyrometers and the center point of the wafer to be heated are used as a plurality of measurement radii, and a plurality of sets of measurement points are determined according to the plurality of measurement radii.

[0072] In one or more embodiments, the pyrometer in the rapid thermal annealing machine may be an infrared pyrometer; the heating device in the rapid thermal annealing machine may be a plurality of point light sources, such as light bulbs.

[0073] Figure 3 A schematic diagram of the structure of a rapid thermal annealing machine with multiple groups of heating units is shown. Figure 3As shown, the rapid thermal annealing machine includes a chamber 30, in which 7 groups of heating units (311-317) are arranged, namely: a first group of heating units 311, a second group of heating units 312, a third group of heating units 313, a fourth group of heating units 314, a fifth group of heating units 315, a sixth group of heating units 316 and a seventh group of heating units 317, and a pyrometer (321-327) is correspondingly arranged at each group of heating units, namely: a first pyrometer 321, a second pyrometer 322, a third pyrometer 323, a fourth pyrometer 324, a fifth pyrometer 325, a sixth pyrometer 326 and a seventh pyrometer 327; for example, a first pyrometer 321 is arranged at the first group of heating units 311, a second pyrometer 322 is arranged at the second group of heating units 312, and so on. After the wafer 33 to be heated is placed in the chamber 30 of the rapid thermal annealing machine, the wafer 33 to be heated is heated. For example, the center point of the wafer 33 to be heated after placement can be located on the central axis of the chamber 30 .

[0074] For example, assuming that Figure 3 The horizontal distances between the pyrometers (321-327) in the rapid thermal annealing machine and the central axis of the chamber 30 are shown in Table 1:

[0075] Pyrometer Horizontal distance between the pyrometer and the center axis of the chamber First Pyrometer 321 12mm Second pyrometer 322 25.4mm Third Pyrometer 323 50.8mm Fourth Pyrometer 324 76.2mm Fifth Pyrometer 325 101.6mm Sixth Pyrometer 326 127mm Seventh Pyrometer 327 140mm

[0076] Table 1

[0077] The multiple horizontal distances in Table 1 can be set as multiple measuring radii for determining multiple sets of measuring point sets, and accordingly, the measuring radii are: R1 = 12 mm, R2 = 25.4 mm, R3 = 50.8 mm, R4 = 76.2 mm, R5 = 101.6 mm, R6 = 127 mm, R7 = 140 mm;

[0078] In one or more embodiments, after a plurality of measurement radii are determined, a plurality of measurement points are respectively selected on a plurality of circles with the center point of the wafer to be heated 33 as the center and the determined plurality of measurement radii as the radius.

[0079] For example, it is assumed that the seven measured radii (R1-R7) are respectively: R1=12mm, R2=25.4mm, R3=50.8mm, R4=76.2mm, R5=101.6mm, R6=127mm, R7=140mm. Figure 4 As shown, 7 circles can be determined based on the 7 measurement radii, and multiple measurement points 41 are selected on each circle to measure the actual characteristic parameters of the heated wafer. All measurement points 41 on each circle form a measurement point set, that is, 7 measurement point sets can be determined accordingly.

[0080] In an alternative embodiment, as Figure 4 shown, the number of measurement points in each set of measurement points is a preset number.

[0081] In a specific implementation, the preset number can be flexibly set according to actual business requirements. Exemplarily, it can be set to select 8 measurement points on each circumference, that is, each set of measurement points includes 8 measurement points; it can also be set to select 7 measurement points on each circumference, that is, each set of measurement points includes 7 measurement points; it can also be set to select 9 measurement points on each circumference, that is, each set of measurement points includes 9 measurement points; the embodiments of the present application do not impose any restrictions on this.

[0082] By setting the number of measurement points in each set of measurement points to include a preset number of measurement points, the measurement effect can be achieved with fewer measurement points, and the utilization rate of the rapid thermal annealing machine can be improved.

[0083] In an alternative embodiment, as Figure 5 shown, the number of measurement points in each set of measurement points is positively correlated with the measurement radius corresponding to the set of measurement points.

[0084] In a specific implementation, more measurement points are selected on the circumference with a larger measurement radius, and fewer measurement points are selected on the circumference with a smaller measurement radius. Exemplarily, when R1 < R2 < R3, it can be set to select 4 measurement points on the circumference with a measurement radius of R1, then the set of measurement points corresponding to the measurement radius of R1 includes 4 measurement points; select 5 measurement points on the circumference with a measurement radius of R2, then the set of measurement points corresponding to the measurement radius of R2 includes 5 measurement points; select 6 measurement points on the circumference with a measurement radius of R3, then the set of measurement points corresponding to the measurement radius of R3 includes 6 measurement points, and so on.

[0085] By setting the number of measurement points in each set of measurement points to be proportional to the measurement radius corresponding to the set of measurement points, that is, the target radius, the larger the target measurement radius, the more the number of measurement points in the set of measurement points with the target measurement radius, thereby improving the measurement accuracy, further reducing the temperature measurement error, and improving the accuracy of temperature compensation.

[0086] In an alternative embodiment, the number of measurement points in each set of measurement points is negatively correlated with the measurement radius corresponding to the set of measurement points.

[0087] In a specific implementation, fewer measurement points are selected on a circle with a larger measurement radius, and more measurement points are selected on a circle with a smaller measurement radius. For example, when R1>R2>R3, it can be set that 8 measurement points are selected on the circumference of the measurement radius R1, and the measurement point set corresponding to the measurement radius R1 includes 8 measurement points; 7 measurement points are selected on the circumference of the measurement radius R2, and the measurement point set corresponding to the measurement radius R2 includes 7 measurement points; 6 measurement points are selected on the circumference of the measurement radius R3, and the measurement point set corresponding to the measurement radius R3 includes 6 measurement points, and so on.

[0088] In an optional embodiment, if Figure 4 As shown, for each measurement point set, multiple measurement points are evenly distributed on the circumference.

[0089] In a specific implementation, multiple measurement points can be evenly selected on the circumference corresponding to each measurement radius, so that the actual characteristic parameter values ​​of the wafer to be heated measured by the measuring machine at all measurement points are more representative. Figure 4 As shown, if 8 measuring points are selected on each circumference, 2 measuring points can be selected respectively in the horizontal direction, vertical direction, direction at an angle of 45° to the horizontal direction, and direction at an angle of 135° to the horizontal direction of the circumference.

[0090] The above method, by evenly arranging multiple measurement points in each measurement point set on the circumference corresponding to the measurement point set, makes the multiple actual characteristic parameter values ​​corresponding to each measurement point set better reflect the characteristics of each area of ​​the wafer to be heated, thereby reducing the temperature measurement error and improving the accuracy of temperature compensation.

[0091] In an optional implementation, for each measurement point set, a plurality of measurement points are randomly distributed on a circle.

[0092] It should be noted that in the embodiment of the present application, the position of each measurement point can be set according to actual business needs, and the embodiment of the present application does not impose any limitation on this.

[0093] Step S202, obtaining the actual characteristic parameter value of each measurement point, where the actual characteristic parameter value is used to characterize the temperature information at the measurement point;

[0094] In an optional implementation, the actual characteristic parameter value includes a sheet resistance value or a film thickness value.

[0095] In one or more embodiments, the measuring device 102 measures the sheet resistance (Rs) of the heated wafer at each measuring point, and transmits the measured sheet resistance values ​​(Rs) to the advanced process control system 101 for processing.

[0096] In one or more embodiments, the measurement device 102 measures the film thickness value (THK) of the heated wafer at each measurement point, and transmits the measured film thickness values ​​(THK) to the advanced process control system 101 for processing.

[0097] Step S203, for each set of measurement points, based on the corresponding relationship between the measurement radius and the standard characteristic parameter value and the sensitivity, determine the standard characteristic parameter value and the sensitivity corresponding to each set of measurement points, wherein the sensitivity is used to characterize the relationship between the change value of the heating temperature and the change value of the actual characteristic parameter value;

[0098] In an optional implementation, the standard characteristic parameter value includes a sheet resistance value or a film thickness value.

[0099] In one or more embodiments, if the measuring device measures the block resistance value (Rs) of the wafer to be heated, the correspondence between the measurement radius, the standard characteristic parameter value and the sensitivity is the correspondence between the measurement radius, the standard block resistance value and the first sensitivity, wherein the first sensitivity is used to characterize the relationship between the change in the heating temperature of the heating device and the change in the block resistance value.

[0100] In one or more embodiments, if the measuring device measures the film thickness value (THK) of the wafer to be heated, the correspondence between the measurement radius, the standard characteristic parameter value and the sensitivity is the correspondence between the measurement radius, the standard film thickness value and the second sensitivity, wherein the second sensitivity is used to characterize the relationship between the change in the heating temperature of the heating device and the change in the film thickness value.

[0101] For example, assuming that there are 7 measuring radii (R1-R7) determined according to the position of the pyrometer, the corresponding relationship between the measuring radius and the standard characteristic parameter value (Target) and the corresponding relationship between the measuring radius and the sensitivity (sensitivity) can be shown in Table 2:

[0102]

[0103] Table 2

[0104] It should be noted that, in the embodiment of the present application, the standard characteristic parameter value in the corresponding relationship between the measurement radius and the standard characteristic parameter value is a plurality of characteristic parameter values ​​obtained at a plurality of measurement radii when the rapid thermal annealing machine is initially operated; the sensitivity in the corresponding relationship between the measurement radius and the sensitivity is a change value of a plurality of characteristic parameter values ​​obtained at a plurality of measurement radii when the annealing temperature of the rapid thermal annealing machine changes by a preset step length when the rapid thermal annealing machine is initially operated.

[0105] For example, assuming that there are 7 measurement radii (R1-R7) determined according to the position of the pyrometer, that is, there are 7 measurement point sets, each of which includes 8 measurement points. Then, the actual characteristic parameter values ​​corresponding to each measurement point in each measurement point set on the wafer to be heated can be shown in Table 3:

[0106]

[0107]

[0108] Table 3

[0109] In an optional embodiment, the standard characteristic parameter value and sensitivity are determined by:

[0110] For any set of measurement points, determine the measurement radius corresponding to the set of measurement points. According to the determined measurement radius, find the standard characteristic parameter value corresponding to the measurement radius and the sensitivity corresponding to the target measurement radius in the corresponding relationship between the measurement radius, the standard characteristic parameter value and the sensitivity.

[0111] For example, assuming that the measurement radius corresponding to a set of measurement points is R2, the standard characteristic parameter value corresponding to R2 is searched in Table 2 above, that is, the standard characteristic parameter value found is T2, and the sensitivity corresponding to R2 is searched in Table 2 above, that is, the sensitivity found is S2.

[0112] Step S204, determining a target compensation value corresponding to the measurement point set according to each actual characteristic parameter value, standard characteristic parameter value and sensitivity corresponding to the measurement point set, and performing temperature adjustment according to the target compensation value.

[0113] In an optional implementation, the target compensation value may be determined in the following manner:

[0114] The average value of the actual characteristic parameter values ​​of multiple measurement points in the measurement point set is calculated; the difference between the average value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

[0115] According to Table 2 and Table 3, the measurement point set with a measurement radius of R2 is used as an example for explanation:

[0116] For example, it can be seen from Table 2 that the standard characteristic parameter value determined according to the measurement radius of the measurement point set is T2, and the sensitivity is S2; it can be seen from Table 3 that the multiple actual characteristic parameter values ​​corresponding to the measurement point set are: RawR21, RawR22, RawR23, RawR24, RawR25, RawR26, RawR27, and RawR28.

[0117] First, calculate the mean value of the above multiple actual characteristic parameter values:

[0118]

[0119] Then, calculate the difference between the average value and the standard characteristic parameter value, as well as the ratio of the difference to the sensitivity, and obtain the target offset value (Offset):

[0120]

[0121] By processing the actual characteristic parameter values ​​of each measurement point set in the above manner, the target compensation value can be obtained as follows:

[0122] As shown in Table 4:

[0123]

[0124]

[0125] Table 4

[0126] The above method determines the target compensation value corresponding to each measurement point set through the actual characteristic parameter values, standard characteristic parameter values ​​and sensitivity of multiple measurement points in each measurement point set. The target compensation value is used to compensate the temperature of the heating unit corresponding to the measurement point set, thereby maintaining the temperature of the rapid thermal annealing machine at the target temperature and improving the annealing effect of the rapid thermal annealing machine on the wafer to be heated.

[0127] In an optional implementation, if the number of measurement points in the measurement point set is an odd number, the target compensation value may be determined in the following manner:

[0128] Determine the median of the actual characteristic parameter values ​​of multiple measurement points in the measurement point set; calculate the difference between the median and the standard characteristic parameter value, and use the ratio of the difference to the sensitivity as the target compensation value corresponding to the measurement point set.

[0129] Based on Table 2 and Table 3, this is described as an example:

[0130] Exemplarily, the measurement radius corresponding to the measurement point set is set to R2, and the multiple actual feature parameter values ​​corresponding to the measurement point set are set to: RawR21, RawR22, RawR23, RawR24, RawR25, RawR26, RawR27. As shown in Table 2, the standard feature parameter value determined according to the target radius of the measurement point set is T2, and the sensitivity is S2.

[0131] First, sort the above multiple actual feature parameter values ​​to determine the median of the above multiple actual feature parameter values. Assume that the median is Mid2=RawR26, where the values ​​can be sorted in order from large to small or from small to large. The embodiment of the present application does not impose any limitation on this.

[0132] Then, the difference between the median and the standard characteristic parameter value, as well as the ratio of the difference to the sensitivity, are calculated to obtain the target offset value (Offset):

[0133]

[0134] In the temperature compensation method provided in the embodiment of the present application, after establishing a set of measurement points on the wafer to be heated, the actual characteristic parameter value of each measurement point is obtained, and based on the corresponding relationship between the measurement radius and the standard characteristic parameter value and sensitivity, the standard characteristic parameter value and sensitivity corresponding to each measurement point set are determined, thereby determining the target compensation value corresponding to each measurement point set, and adjusting the temperature according to the target compensation value. In the case of temperature drift in the chamber of a semiconductor machine, the method of determining the target compensation value through the actual characteristic parameter values ​​of multiple measurement points can reduce the temperature measurement error, improve the accuracy of temperature compensation, and thus improve the utilization rate of the semiconductor machine. At the same time, compared with the method in which the staff adjusts the machine at the semiconductor machine end according to the target compensation value, this method reduces human intervention, avoids the risk of misoperation caused by human intervention, realizes automatic control of the semiconductor machine, and improves the production efficiency of the semiconductor machine.

[0135] like Figure 6 FIG. 1 is a complete flow chart of a temperature compensation method based on a semiconductor machine provided by an embodiment of the present application, comprising the following steps:

[0136] Step S601, the advanced process control system establishes a set of measurement points on the wafer to be heated, and sends the established set of measurement points to the measurement device;

[0137] Each measurement point set includes a plurality of measurement points located on a circle with the same measurement radius.

[0138] Step S602, the measuring device measures the actual characteristic parameter value at each measuring point of the wafer to be heated according to each measuring point set, and sends all the actual characteristic parameter values ​​to the advanced process control system;

[0139] The actual characteristic parameter value is used to characterize the temperature information at the measuring point of the wafer to be heated.

[0140] Step S603, after the advanced process control system obtains the actual characteristic parameter value of each measurement point, it determines the standard characteristic parameter value and sensitivity corresponding to each measurement point set according to the measurement radius corresponding to each measurement point set and the corresponding relationship between the measurement radius and the standard characteristic parameter value and sensitivity;

[0141] Step S604, the advanced process control system calculates an average value of actual characteristic parameter values ​​corresponding to a plurality of measurement points in each measurement point set;

[0142] Step S605, the advanced process control system calculates the difference between the average value and the determined standard characteristic parameter value, and calculates the ratio of the difference to the determined sensitivity to obtain a target compensation value corresponding to each set of measurement points;

[0143] Step S606, when heating the wafer to be heated, the advanced process control system adjusts the heating power of the heating unit according to the target compensation value.

[0144] In a specific implementation, the rapid thermal annealing machine can adjust the heating power of a corresponding group of heating units according to multiple target compensation values. For example, the measurement radius corresponding to the measurement point set is set to R2, and the target compensation value corresponding to the measurement point set is (Mean2-T2) / S2. Figure 3 In the rapid thermal annealing machine shown, the heating unit corresponding to the measured radius R2 is determined to be the second group of heating units 312, and then the heating power of the second group of heating units 312 is adjusted according to the target compensation value (Mean2-T2) / S2, so as to achieve temperature adjustment. For example, if the target compensation value obtained is a negative value, the power of the heating unit is reduced accordingly to lower the annealing temperature; if the target compensation value obtained is a positive value, the power of the heating unit is increased accordingly to increase the annealing temperature.

[0145] Based on the same concept, an embodiment of the present application also provides a temperature compensation device. Since the device is the device in the method in the embodiment of the present application, and the principle of solving the problem by the device is similar to that of the method, the implementation of the device can refer to the implementation of the method, and the repeated parts will not be repeated.

[0146] like Figure 7 As shown, the above device includes the following modules:

[0147] The measurement point determination module 701 is used to establish a measurement point set on the wafer to be heated, each measurement point set including a plurality of measurement points located on a circle with the same measurement radius;

[0148] The information acquisition module 702 is used to acquire the actual characteristic parameter value of each measurement point, where the actual characteristic parameter value is used to characterize the temperature information at the measurement point; and for each measurement point set, it is used to determine the standard characteristic parameter value and sensitivity corresponding to each measurement point set based on the corresponding relationship between the measurement radius and the standard characteristic parameter value and the sensitivity, where the sensitivity is used to characterize the relationship between the change value of the heating temperature and the change value of the actual characteristic parameter value;

[0149] The temperature compensation module 703 is used to determine the target compensation value corresponding to the measurement point set according to the actual characteristic parameter value, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set;

[0150] The control module 704 is used to adjust the temperature according to the target compensation value.

[0151] In an optional implementation, the temperature compensation module 703 is specifically used for:

[0152] Calculate the average value of the actual characteristic parameter values ​​corresponding to multiple measurement points in the measurement point set;

[0153] The difference between the average value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

[0154] In an optional implementation, the temperature compensation module 703 is specifically used for:

[0155] Determine a median value of actual characteristic parameter values ​​corresponding to a plurality of measurement points in the measurement point set;

[0156] The difference between the median value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

[0157] In an optional embodiment, the heating device for the wafer to be heated includes multiple groups of heating units, and the number of the measurement point sets is the same as the number of groups of heating units.

[0158] In an optional implementation, the number of measurement points in each measurement point set is a preset number, or the number of measurement points in each measurement point set is positively correlated with the size of the measurement radius corresponding to the measurement point set.

[0159] In an optional implementation, for each measurement point set, a plurality of measurement points are evenly or randomly distributed on a circle.

[0160] In an optional implementation, the actual characteristic parameter value and the standard characteristic parameter value include a sheet resistance value or a film thickness value.

[0161] Based on the same concept, an embodiment of the present application also provides a semiconductor machine, including a heating device and a temperature compensation device. The principle of solving the problem by the semiconductor machine is similar to that of the aforementioned temperature compensation device. Therefore, the implementation of the semiconductor machine can refer to the implementation of the aforementioned temperature compensation device, and the repeated parts will not be repeated.

[0162] A semiconductor machine is used to obtain a target compensation value and adjust the heating power of a heating device in the semiconductor machine according to the target compensation value when heating a wafer to be heated.

[0163] It should be noted that other essential components of the semiconductor machine are well understood by those skilled in the art and will not be described in detail herein and should not be construed as limiting the present application.

[0164] With the same concept, an embodiment of the present application also provides an advanced process control system. Since the advanced process control system is the advanced process control system in the method in the embodiment of the present application, and the principle of solving the problem by the advanced process control system is similar to that of the method, the implementation of the advanced process control system can refer to the implementation of the method, and the repeated parts will not be repeated.

[0165] Refer to the following Figure 8 An advanced process control system 80 according to this embodiment of the present application will be described. Figure 8 The advanced process control system 80 shown is only an example and should not bring any limitation to the functions and scope of use of the embodiments of the present application.

[0166] like Figure 8 As shown, the components of the advanced process control system 80 may include but are not limited to: the at least one processor 81 mentioned above, and the at least one memory 82 storing executable instructions of the processor 81 . The processor 81 is a processor of an intelligent device.

[0167] The processor 81 executes the executable instructions to implement the following steps:

[0168] Establishing a set of measurement points on the wafer to be heated, each set of measurement points including a plurality of measurement points located on a circumference of the same measurement radius;

[0169] Obtaining the actual characteristic parameter value of each measuring point, the actual characteristic parameter value is used to characterize the temperature information at the measuring point; and for each set of measuring points, determining the standard characteristic parameter value and sensitivity corresponding to each set of measuring points based on the corresponding relationship between the measuring radius and the standard characteristic parameter value and the sensitivity, the sensitivity being used to characterize the relationship between the change value of the heating temperature and the change value of the actual characteristic parameter value;

[0170] Determine a target compensation value corresponding to the measurement point set according to the actual characteristic parameter value, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set;

[0171] The temperature is adjusted according to the target compensation value.

[0172] Based on the same concept, an embodiment of the present application also provides a temperature control system, including a semiconductor machine and an advanced process control system. The principle of solving the problem by the temperature control system is similar to that of the aforementioned advanced process control system. Therefore, the implementation of the temperature control system can refer to the implementation of the aforementioned advanced process control system, and the repeated parts will not be repeated.

[0173] In an embodiment of the present application, an advanced process control system is used to establish a set of measurement points on a wafer to be heated, each set of measurement points including a plurality of measurement points located on a circumference of the same measurement radius; obtain an actual characteristic parameter value of each measurement point, the actual characteristic parameter value being used to characterize temperature information at the measurement point; and for each set of measurement points, based on a corresponding relationship between the measurement radius and the standard characteristic parameter value and sensitivity, determine a standard characteristic parameter value and sensitivity corresponding to each set of measurement points, the sensitivity being used to characterize a relationship between a change value of the heating temperature and a change value of the actual characteristic parameter value; determine a target compensation value corresponding to the set of measurement points according to the actual characteristic parameter value, the standard characteristic parameter value and the sensitivity corresponding to the set of measurement points; and perform temperature adjustment according to the target compensation value;

[0174] A semiconductor machine is used to obtain a target compensation value and adjust the heating power of a heating device in the semiconductor machine according to the target compensation value when heating a wafer to be heated.

[0175] The other essential components of the temperature control system should be understood by ordinary technicians in this field and will not be elaborated here, nor should they be used as limitations to this application.

[0176] In some possible embodiments, various aspects of the present application may also be implemented in the form of a program product, which includes a program code. When the program product is run on a terminal device, the program code is used to enable the terminal device to execute the steps of each module in the temperature compensation device according to various exemplary embodiments of the present disclosure described in the above "Exemplary Method" section of this specification, for example, establishing a set of measurement points on the wafer to be heated, each measurement point set including a plurality of measurement points located on a circumference of the same measurement radius; obtaining an actual characteristic parameter value of each measurement point, the actual characteristic parameter value being used to characterize the temperature information at the measurement point; and for each measurement point set, determining a standard characteristic parameter value and a sensitivity corresponding to each measurement point set based on the corresponding relationship between the measurement radius and the standard characteristic parameter value and the sensitivity, the sensitivity being used to characterize the relationship between the change value of the heating temperature and the change value of the actual characteristic parameter value; determining a target compensation value corresponding to the measurement point set according to the actual characteristic parameter value, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set; and performing temperature adjustment according to the target compensation value.

[0177] like Fig. 9 As shown, a program product 90 of an information publishing method according to an embodiment of the present application is described, which can adopt a portable compact disk read-only memory (CD-ROM) and include program code, and can be run on a terminal device, such as a personal computer. However, the program product of the present application is not limited thereto. In this document, a readable storage medium can be any tangible medium containing or storing a program, which can be used by or in combination with an instruction execution system, an apparatus or a device.

[0178] The present application is described above with reference to the block diagrams and / or flow charts showing the methods, devices (systems) and / or computer program products according to the embodiments of the present application. It should be understood that a block of the block diagram and / or flow chart diagram and a combination of blocks of the block diagram and / or flow chart diagram can be implemented by computer program instructions. These computer program instructions can be provided to a processor of a general-purpose computer, a special-purpose computer and / or other programmable data processing device to produce a machine, so that the instructions executed by the computer processor and / or other programmable data processing device create a method for implementing the functions / actions specified in the block diagram and / or flow chart block.

[0179] Accordingly, the present application may also be implemented with hardware and / or software (including firmware, resident software, microcode, etc.). Furthermore, the present application may take the form of a computer program product on a computer-usable or computer-readable storage medium, which has a computer-usable or computer-readable program code implemented in the medium, for use by an instruction execution system or in conjunction with an instruction execution system. In the context of the present application, a computer-usable or computer-readable medium may be any medium that may contain, store, communicate, transmit, or convey a program for use by an instruction execution system, device, or apparatus, or in conjunction with an instruction execution system, device, or apparatus.

[0180] Obviously, those skilled in the art can make various changes and modifications to the present application without departing from the spirit and scope of the present application. Thus, if these modifications and variations of the present application fall within the scope of the claims of the present application and their equivalents, the present application is also intended to include these modifications and variations.

Claims

1. A temperature compensation method, characterized in that: include: Establishing a set of measurement points on the wafer to be heated, each of the measurement point sets comprising a plurality of measurement points located on a circumference of the same measurement radius; Acquire an actual characteristic parameter value of each of the measurement points, wherein the actual characteristic parameter value is used to characterize the temperature information at the measurement point; For each of the measurement point sets, based on the corresponding relationship between the measurement radius and the standard characteristic parameter value and the sensitivity, determine the standard characteristic parameter value and the sensitivity corresponding to each of the measurement point sets, wherein the sensitivity is used to characterize the relationship between the change value of the heating temperature and the change value of the actual characteristic parameter value; According to each of the actual characteristic parameter values, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set, a target compensation value corresponding to the measurement point set is determined, and temperature adjustment is performed according to the target compensation value.

2. The method according to claim 1, characterized in that The determining the target compensation value corresponding to the measurement point set according to each of the actual characteristic parameter values, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set comprises: Calculating an average value of the actual characteristic parameter values ​​of a plurality of the measurement points in the measurement point set; The difference between the average value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

3. The method according to claim 1, characterized in that If the number of measurement points in the measurement point set is an odd number, determining the target compensation value corresponding to the measurement point set according to each of the actual characteristic parameter values, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set includes: Determine a median value of the actual characteristic parameter values ​​corresponding to a plurality of the measurement points in the measurement point set; The difference between the median value and the standard characteristic parameter value is calculated, and the ratio of the difference to the sensitivity is used as the target compensation value corresponding to the measurement point set.

4. The method according to any one of claims 1 to 3, characterized in that The heating device for the wafer to be heated comprises a plurality of groups of heating units, and the number of the measurement point sets is the same as the number of the groups of the heating units.

5. The method according to any one of claims 1 to 3, characterized in that The number of measurement points in each of the measurement point sets is a preset number, or the number of measurement points in each of the measurement point sets is positively correlated with the size of the measurement radius.

6. The method according to any one of claims 1 to 3, characterized in that For each of the measurement point sets, a plurality of the measurement points are evenly distributed or randomly distributed on the circumference.

7. The method according to any one of claims 1 to 3, characterized in that The actual characteristic parameter value and the standard characteristic parameter value include a sheet resistance value or a film thickness value.

8. A temperature compensation device, characterized in that: include: A measurement point determination module, used to establish a set of measurement points on the wafer to be heated, each of which includes a plurality of measurement points located on a circle with the same measurement radius; An information acquisition module, used to acquire an actual characteristic parameter value of each of the measurement points, the actual characteristic parameter value being used to characterize the temperature information at the measurement point; and for each of the measurement point sets, used to determine a standard characteristic parameter value and a sensitivity corresponding to each of the measurement point sets based on a correspondence between the measurement radius and the standard characteristic parameter value and a sensitivity, the sensitivity being used to characterize a relationship between a change value of the heating temperature and a change value of the actual characteristic parameter value; A temperature compensation module, used to determine a target compensation value corresponding to the measurement point set according to the actual characteristic parameter value, the standard characteristic parameter value and the sensitivity corresponding to the measurement point set; A control module is used to perform temperature regulation based on the target compensation value.

9. A semiconductor machine, characterized in that: The semiconductor machine comprises a heating device and a temperature compensation device as described in claim 8, wherein the semiconductor machine is used to obtain the target compensation value and adjust the heating power of the heating device in the semiconductor machine according to the target compensation value when heating the wafer to be heated.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores computer instructions, and when the computer instructions are executed on a computer, the computer is enabled to execute the steps of the temperature compensation method according to any one of claims 1 to 7.

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