Novel substrate and vertical cavity surface emitting laser thereof

Abstract

The invention discloses a novel substrate and a vertical cavity surface emitting laser thereof, the novel substrate is formed by injecting hydrogen ions into gallium arsenide, the injection energy of the hydrogen ions is 50-800 KeV, the injection concentration of the hydrogen ions is 1.00 E + 12-9.00 E + 14, and the injection temperature of the hydrogen ions is 5-35 DEG C. The vertical cavity surface emitting laser comprises the novel substrate and further comprises a first Bragg reflection layer, an isolation layer, a second Bragg reflection layer and a contact layer. Experiments show that compared with an existing vertical-cavity surface-emitting laser, the vertical-cavity surface-emitting laser has the advantages that the power consumption can be effectively reduced by 10-15%, the electric conduction efficiency can be remarkably improved by 8-12%, and the heat conduction characteristic can be effectively enhanced, so that the service life is prolonged, and the technical effects of improving the precision of an emitter and the like can be achieved.

Description

Technical Field

[0001] The present invention belongs to the field of optoelectronic technology, specifically to the field of semiconductor materials, and in particular to a novel substrate and a vertical cavity surface emitting laser thereof. Background Art

[0002] Semiconductors are materials with electrical conductivity between conductors and insulators at room temperature. They are widely used in radios, televisions, computers, and mobile phones. For example, diodes are devices made of semiconductors. The core units in most electronic products are closely related to semiconductors. Common semiconductor materials include silicon, germanium, gallium arsenide, etc. Vertical Cavity Surface Emitting Laser (VCSEL) is a widely used semiconductor. Vertical Cavity Surface Emitting Laser uses gallium arsenide semiconductor material as a substrate. Different from other light sources such as LED (light emitting diode) and LD (Laser Diode), it has the advantages of high modulation speed, high power output through two-dimensional array integration, easy and efficient coupling with optical fiber, high efficiency on-chip testing, and low production cost. It has become an important device for data transmission and three-dimensional identification systems, and is widely used in optical communications, precision machining, advanced manufacturing equipment, test instruments, scientific research and other fields.

[0003] However, existing vertical cavity surface emitting lasers generally have problems such as high power consumption, low electrical conduction efficiency, and low precision, which seriously restrict the future development of electronic products. In order to solve these problems, this patent will study a new substrate and its vertical cavity surface emitting laser, so as to improve the performance of the gallium arsenide substrate of the vertical cavity surface emitting laser to solve the above technical problems. Summary of the invention

[0004] In order to effectively solve the above technical problems, the present invention provides a new substrate in scheme 1, wherein the new substrate is formed by injecting hydrogen ions into gallium arsenide, the hydrogen ion injection energy is 50KeV~800KeV, the hydrogen ion injection concentration is 1.00E+12~9.00E+14, and the hydrogen ion injection temperature is 5℃~35℃.

[0005] Preferably, the hydrogen ion implantation energy is 50 KeV to 100 KeV, and the hydrogen ion implantation concentration is 1.00E+14 to 9.00E+14.

[0006] Preferably, the hydrogen ion implantation energy is 80 KeV to 120 KeV, and the hydrogen ion implantation concentration is 1.00E+14 to 9.00E+14.

[0007] Preferably, the hydrogen ion implantation energy is 200 KeV to 300 KeV, and the hydrogen ion implantation concentration is 1.00E+14 to 9.00E+14.

[0008] Preferably, the hydrogen ion implantation energy is 350KeV to 450KeV, and the hydrogen ion implantation concentration is 1.00E+13 to 9.00E+13.

[0009] Preferably, the hydrogen ion implantation energy is 500KeV to 600KeV, and the hydrogen ion implantation concentration is 1.00E+12 to 9.00E+12.

[0010] Preferably, the hydrogen ion implantation energy is 650KeV to 800KeV, and the hydrogen ion implantation concentration is 1.00E+12 to 9.00E+12.

[0011] Option 2, a vertical cavity surface emitting laser, includes a new substrate in Option 1 and its preferred option, and also includes a first Bragg reflection layer, an isolation layer, a second Bragg reflection layer, and a contact layer. The first Bragg reflection layer, the isolation layer, the second Bragg reflection layer, and the contact layer are all located on one side of the new substrate and are distributed in sequence along the direction away from the new substrate.

[0012] The beneficial effects of the present invention are:

[0013] (1) Compared with the existing vertical cavity surface emitting laser, the vertical cavity surface emitting laser of the present invention can effectively reduce the power consumption by 10-15%.

[0014] (2) Compared with the existing vertical cavity surface emitting laser, the vertical cavity surface emitting laser of the present invention can significantly increase the electrical conduction efficiency by 8-12%.

[0015] (3) Compared with the existing vertical cavity surface emitting laser, the vertical cavity surface emitting laser of the present invention can effectively enhance the thermal conductivity, so that the temperature of the vertical cavity surface emitting laser of the present invention is reduced by 1-1.5°C, thereby increasing the service life.

[0016] (4) Compared with the existing vertical cavity surface emitting lasers, the vertical cavity surface emitting laser of the present invention has significantly improved transmitter accuracy. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to better express the technical solution of the present invention, the present invention will be described with drawings as follows:

[0018] Figure 1 Structural diagram of embodiment 7;

[0019] Explanation of the accompanying drawings: 1. novel substrate, 2. first Bragg reflection layer, 3. isolation layer, 4. second Bragg reflection layer, 5. contact layer. DETAILED DESCRIPTION

[0020] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.

[0021] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside", "outside", "front", and "back" indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings. This is merely for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0022] Embodiment 1, a novel substrate, the substrate is formed by injecting hydrogen ions into gallium arsenide. In this embodiment, the hydrogen ion injection energy is 50KeV, the hydrogen ion injection concentration is 5.00E+14, and the hydrogen ion injection temperature is 5°C to 35°C.

[0023] Embodiment 2, a novel substrate, the substrate is formed by injecting hydrogen ions into gallium arsenide. In this embodiment, the hydrogen ion injection energy is 100KeV, the hydrogen ion injection concentration is 4.00E+14, and the hydrogen ion injection temperature is 5°C to 35°C.

[0024] Embodiment 3, a novel substrate, the substrate is formed by injecting hydrogen ions into gallium arsenide. In this embodiment, the hydrogen ion injection energy is 200KeV, the hydrogen ion injection concentration is 2.00E+14, and the hydrogen ion injection temperature is 5°C to 35°C.

[0025] Embodiment 4, a novel substrate, the substrate is formed by injecting hydrogen ions into gallium arsenide. In this embodiment, the hydrogen ion injection energy is 350KeV, the hydrogen ion injection concentration is 1.00E+13, and the hydrogen ion injection temperature is 5°C to 35°C.

[0026] Embodiment 5, a novel substrate, the substrate is formed by injecting hydrogen ions into gallium arsenide. In this embodiment, the hydrogen ion injection energy is 500KeV, the hydrogen ion injection concentration is 8.00E+12, and the hydrogen ion injection temperature is 5°C to 35°C.

[0027] Embodiment 6, a novel substrate, the substrate is formed by injecting hydrogen ions into gallium arsenide. In this embodiment, the hydrogen ion injection energy is 650KeV, the hydrogen ion injection concentration is 5.00E+12, and the hydrogen ion injection temperature is 5°C to 35°C.

[0028] Embodiment 7, a vertical cavity surface emitting laser, includes the new substrate 1 in the above embodiment, and also includes a first Bragg reflection layer 2, an isolation layer 3, a second Bragg reflection layer 4, and a contact layer 5. The first Bragg reflection layer 2, the isolation layer 3, the second Bragg reflection layer 4, and the contact layer 5 are all located on one side of the new substrate 1 and are distributed in sequence along the direction away from the new substrate 1.

[0029] Embodiment 8, a three-dimensional identification system, includes a transmitter module and a receiver module, the transmitter module includes the vertical cavity surface emitting laser, wafer-level optical elements and binary optical devices of embodiment 7; the receiver module includes an infrared filter, a lens and an infrared sensing module; the wafer-level optical elements, the binary optical devices, the infrared filter, the lens, and the infrared sensing module are all existing products.

[0030] The above-mentioned embodiments only express several implementation methods of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A novel substrate, characterized in that: The novel substrate is formed by injecting hydrogen ions into gallium arsenide, the hydrogen ion injection energy is 50KeV to 800KeV, the hydrogen ion injection concentration is 1.00E+12 to 9.00E+14, and the hydrogen ion injection temperature is 5°C to 35°C.

2. A novel substrate according to claim 1, characterized in that: The hydrogen ion implantation energy is 50 KeV to 100 KeV, and the hydrogen ion implantation concentration is 1.00E+14 to 9.00E+14.

3. A novel substrate according to claim 1, characterized in that: The hydrogen ion implantation energy is 80 KeV to 120 KeV, and the hydrogen ion implantation concentration is 1.00E+14 to 9.00E+14.

4. A novel substrate according to claim 1, characterized in that: The hydrogen ion implantation energy is 200 KeV to 300 KeV, and the hydrogen ion implantation concentration is 1.00E+14 to 9.00E+14.

5. A novel substrate according to claim 1, characterized in that: The hydrogen ion implantation energy is 350KeV to 450KeV, and the hydrogen ion implantation concentration is 1.00E+13 to 9.00E+13.

6. A novel substrate according to claim 1, characterized in that: The hydrogen ion implantation energy is 500KeV to 600KeV, and the hydrogen ion implantation concentration is 1.00E+12 to 9.00E+12.

7. A novel substrate according to claim 1, characterized in that: The hydrogen ion implantation energy is 650KeV to 800KeV, and the hydrogen ion implantation concentration is 1.00E+12 to 9.00E+12.

8. A vertical cavity surface emitting laser, characterized in that: A novel substrate comprising any one of claims 1 to 7, further comprising a first Bragg reflection layer, an isolation layer, a second Bragg reflection layer, and a contact layer, wherein the first Bragg reflection layer, the isolation layer, the second Bragg reflection layer, and the contact layer are all located on one side of the novel substrate and are distributed in sequence in a direction away from the novel substrate.

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