LED chip structure and preparation method thereof

Abstract

The invention discloses an LED chip structure and a preparation method thereof, and the LED chip structure comprises a first substrate which comprises a first surface and a second surface opposite to the first surface; the light-emitting device comprises a light-emitting area, and the light-emitting direction of the light-emitting area deviates from the first substrate; the light reflecting layer is formed on the first surface, and the surface, deviating from the first substrate, of the light reflecting layer is connected to the light emitting area in a bonding mode. The reflection effect is enhanced, and the optical crosstalk phenomenon between adjacent light-emitting devices is improved.

Description

Technical Field

[0001] The present invention relates to the field of LED display technology, and in particular to an LED chip structure and a preparation method thereof. Background Art

[0002] LED (Light Emitting Diode) is a semiconductor device that uses energy released during carrier recombination to emit light. LED chips have many advantages such as low power consumption, pure color, long life, small size, fast response time, energy saving and environmental protection. They are widely used in backlight, VR screens, mobile phone displays, small displays and other fields.

[0003] When manufacturing LED chips, a reflective layer is usually made for the light-emitting device to increase the brightness of the LED chip. In the prior art, the reflective layer is usually a DBR reflective layer with high reflectivity. On the one hand, the DBR reflective layer is titanium oxide, which is the material of sunscreen and has a strong absorption of ultraviolet light; on the other hand, the thickness of DBR is thicker than metal, and the process difficulty of making tiny patterns is greater than that of metal, and it is not suitable for many process scenarios. Summary of the invention

[0004] One of the purposes of the present invention is to provide an LED chip structure to solve the technical problem of complex reflective layer process of LED chips in the prior art.

[0005] One of the purposes of the present invention is to provide a method for preparing an LED chip structure.

[0006] To achieve one of the above-mentioned purposes of the invention, one embodiment of the present invention provides an LED chip structure, comprising: a first substrate, comprising a first surface and a second surface opposite to the first surface; a light-emitting device, comprising a light-emitting area, wherein the light-emitting direction of the light-emitting area is away from the first substrate; a reflective layer, formed on the first surface, wherein the surface of the reflective layer away from the first substrate is bonded to the light-emitting area.

[0007] As a further improvement of an embodiment of the present invention, the reflective layer is a metal material layer.

[0008] As a further improvement of an embodiment of the present invention, the light emitting area is bonded to the light reflecting layer by transparent adhesive.

[0009] As a further improvement of an embodiment of the present invention, a plurality of the light emitting devices are arranged at intervals on the surface of the reflective layer, and the LED chip structure includes a filling portion filled between adjacent light emitting devices.

[0010] As a further improvement of an embodiment of the present invention, the filling portion includes a bump higher than the light-emitting device, the bump has a top surface and a first side surface connecting the top surface and the light-emitting device, and the first side surface is an inclined surface.

[0011] As a further improvement of one embodiment of the present invention, the LED chip structure includes a first alignment mark arranged on the first surface, and a second alignment mark matching the first alignment mark along the thickness direction of the LED chip structure, and the first alignment mark has the same height as the reflective layer.

[0012] As a further improvement of an embodiment of the present invention, the filling portion covers the outer side surface of the light-emitting device and the outer side surface of the reflective layer, and there is a gap between the filling portion and the first alignment mark.

[0013] To achieve one of the above-mentioned purposes of the invention, an embodiment of the present invention provides a method for preparing an LED chip structure, comprising the following steps:

[0014] Providing a first substrate, comprising a first surface and a second surface opposite to the first surface;

[0015] Preparing a reflective layer on the first surface;

[0016] Providing a light emitting device, including a light emitting region;

[0017] The light reflecting layer and the light emitting area are bonded and connected, and the light emitting direction of the light emitting area is opposite to the light reflecting layer.

[0018] As a further improvement of an embodiment of the present invention, "preparing a reflective layer on the first surface" includes: preparing a reflective layer and a first alignment mark on the first surface, and the first alignment mark has the same height as the reflective layer.

[0019] As a further improvement of an embodiment of the present invention, “providing a light-emitting device” includes the steps of:

[0020] A temporary substrate carrying a light emitting device is provided, wherein the temporary substrate has a second alignment mark, and the second alignment mark is used to match and connect with the first alignment mark along a thickness direction thereof.

[0021] As a further improvement of one embodiment of the present invention, "bonding the reflective layer and the light-emitting area" includes the steps of: a temporary substrate carrying a light-emitting device and a second alignment mark is bonded to a first substrate, and the light-emitting device and the second alignment mark are simultaneously transferred to the first substrate.

[0022] As a further improvement of an embodiment of the present invention, "providing a temporary substrate carrying light-emitting devices" includes: providing a substrate, manufacturing a plurality of light-emitting devices on the substrate, and transferring the plurality of light-emitting devices to the temporary substrate by laser stripping.

[0023] As a further improvement of one embodiment of the present invention, the steps are as follows:

[0024] Filling the area between adjacent light-emitting devices to form a filling portion, wherein the filling portion has a top surface higher than the electrode area and a first side surface, wherein the first side surface is an inclined surface;

[0025] A wiring layer is formed on the light emitting device, the top surface of the filling portion and the first side surface.

[0026] Compared with the prior art, the present invention provides an LED chip structure, in which a reflective layer is arranged on the first substrate and then bonded to the light-emitting device, so as to enhance the reflection effect, improve the light crosstalk phenomenon, and has a simple process and is easy to manufacture. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] Figure 1 Schematic diagram of an LED chip structure in one embodiment of the present invention.

[0028] Figure 2 It is a schematic diagram of providing a substrate and manufacturing a light-emitting device in one embodiment of the present invention.

[0029] Figure 3 FIG. 4 is a schematic diagram of transferring a light-emitting device to a temporary substrate in one embodiment of the present invention.

[0030] Figure 4 Schematic diagram of a first substrate in one embodiment of the present invention.

[0031] Figure 5 FIG. 4 is a schematic diagram of transferring a light-emitting device to a first substrate in one embodiment of the present invention.

[0032] Figure 6 It is a schematic diagram of manufacturing a filling portion in one embodiment of the present invention.

[0033] Figure 7 It is a schematic diagram of the steps of a method for preparing an LED chip structure in one embodiment of the present invention. DETAILED DESCRIPTION

[0034] The present invention will be described in detail below in conjunction with the specific embodiments shown in the accompanying drawings. However, these embodiments do not limit the present invention, and any structural, methodological, or functional changes made by a person skilled in the art based on these embodiments are all within the scope of protection of the present invention.

[0035] It should be noted that the term "comprises" or any other variation thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device that includes a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In addition, the terms "first", "second", "third", "fourth", etc. are used for descriptive purposes only and cannot be understood as indicating or implying relative importance.

[0036] The terms "connected", "connected to" or any other variants are intended to cover various relative positions in a connection relationship, so as to include direct connection or indirect connection. Among them, the direct connection can be formed by a gas pipeline, the indirect connection can be a connection relationship established by a device such as a valve body, a sensor, etc., can be a connection relationship established by a gas circuit component such as a brake control unit, or can be a connection relationship established by any other medium such as air.

[0037] See also Figure 1 , is a schematic structural diagram of an LED chip structure 1000 provided in one embodiment of the present invention.

[0038] In a preferred embodiment, the LED chip structure 1000 includes a first substrate 10, a light emitting device 30 and a reflective layer 20. The first substrate 10 includes a first surface and a second surface opposite to the first surface, and the reflective layer 20 is formed on the first surface. The light emitting device 30 includes a light emitting area 31, the light emitting direction of the light emitting area 31 is away from the first substrate 10, and the surface of the reflective layer 20 away from the first substrate 10 is bonded to the light emitting area 31 to reduce cross-lighting and enhance the light emitting effect of each light emitting device 30.

[0039] The light-emitting area 31 includes a small amount of sapphire, and the reflective layer 20 is a metal material layer. The reflectivity of the sapphire is lower than that of the metal reflective layer 20. The metal reflective layer 20 has a high reflectivity, which improves the reflection effect of the light-emitting area 31. Specifically, when the light from the light-emitting area 31 propagates toward the first substrate 10 to the reflective layer 20, most of it is reflected by the reflective layer 20, which changes the propagation direction of the light, so that the light propagates in a direction away from the first substrate 10. In this way, the light is concentrated and emitted in the light-emitting direction away from the first substrate 10, reducing the light loss in other directions.

[0040] On the other hand, the scattering angle of the sapphire is large, and the scattering angle of the metal reflective layer 20 is relatively small. The metal reflective layer 20 is arranged on the bottom surface of the light-emitting area 31 to reduce the cross-light caused by the scattering of sapphires of different colors.

[0041] The first substrate 10 can be selected from sapphire, silicon wafer, etc. In a specific embodiment, the first substrate 10 is a silicon wafer, the light emitting direction of the light emitting area 31 is away from the first substrate 10, and the first substrate 10 is opaque.

[0042] The metal material of the reflective layer 20 can be aluminum (Al), silver (Ag), gold (Au), etc. In a specific embodiment, aluminum is preferred, and is formed on the first surface of the first substrate 10 by evaporation. The aluminum layer is the only material with high reflectivity from the ultraviolet region to the infrared region. At the same time, a thin aluminum oxide film layer can be generated on the surface of the aluminum layer in the atmosphere to protect the film layer, so the film layer is relatively firm and stable.

[0043] The reflective layer 20 is disposed on the first surface of the first substrate 10. Compared with being disposed on the second surface, the reflective layer 20 is closer to the light-emitting area 31, shortening the propagation path of light and reducing scattering loss. The light-emitting area 31 is bonded to the reflective layer 20, which is simple in process and reduces crosstalk. The light-emitting area 31 is bonded to the reflective layer 20 by transparent glue, and the transparent glue does not affect the color purity of the light emitted by the light-emitting device 30.

[0044] The light emitting area 31 includes an n-type semiconductor layer, a light emitting layer and a p-type semiconductor layer. The light emitting layer is formed between the n-type semiconductor layer and the p-type semiconductor layer. The positions of the n-type semiconductor layer and the p-type semiconductor layer along the thickness direction are not limited.

[0045] The material used for the light emitting area 31 may be gallium nitride (GaN) or gallium phosphide (GaP) or gallium indium arsenic phosphide (GaInAsP). These inorganic materials have high transparency and good light transmittance and are widely used in making materials for light emitting diodes.

[0046] Each of the light-emitting devices 30 further includes an electrode region 32 disposed in the light-emitting region 31 . The electrode region 32 includes a p-electrode and an n-electrode, which are equivalent to positive and negative electrodes. The electrode region 32 is used to connect to the metal wiring layer to connect each light-emitting device 30 to the circuit.

[0047] In a preferred embodiment, a plurality of the light emitting devices 30 are arranged at intervals on the surface of the reflective layer 20, and the LED chip structure 1000 includes a filling portion 40 filled between adjacent light emitting devices 30 to protect the internal light emitting devices 30. The filling portion 40 is provided between the electrode regions 32 of each light emitting device 30, the filling portion 40 is provided between the electrode regions 32 of adjacent light emitting devices 30, and the filling portion is provided between adjacent light emitting regions 31. The filling portion 40 covers the outer side surface of the light emitting device 30 and the outer side surface of the reflective layer 20, and the filling portion 40 is filled on the first surface.

[0048] The filling part 40 can be made of resin polymer, polyimide (PI), silicone resin or inorganic oxide, which has good insulation performance and is suitable for packaging and protecting LED chips.

[0049] In one embodiment, the filling portion 40 includes a bump that is higher than the light-emitting device 30, and the bump has a top surface and a first side surface 41 connecting the top surface and the electrode area 32, and the first side surface 41 is an inclined surface, which is convenient for the metal film plated electrode area 32 to access the wiring layer. Although it is shown as a vertical side surface in the figure, if the first side surface 41 is a vertical surface perpendicular to the electrode area 32 in actual application, it is easy to break when the wiring layer or metal electrode is subsequently made in the electrode area 32.

[0050] In one embodiment, the LED chip structure 1000 includes a first alignment mark 51 arranged on the first surface, and a second alignment mark 52 matching the first alignment mark 51 along the thickness direction of the LED chip structure 1000, and the first alignment mark 51 has the same height as the reflective layer 20, which facilitates equipment alignment and focusing during the preparation of the LED chip structure.

[0051] The first alignment mark 51 is made of metal material and is formed on the first surface of the first substrate 10 by evaporation. The second alignment mark 52 is also made of metal material. One of the first alignment mark 51 and the second alignment mark 52 has a bump structure, and the other has a groove structure matching the bump structure, so that the first alignment mark 51 and the second alignment mark 52 can be matched with each other to achieve a precise alignment function.

[0052] The first alignment mark 51 and the second alignment mark 52 are located outside the light-emitting device 30, and there is a gap between the filling portion 40 and the first alignment mark 51, so there is no need to waste material for filling. According to actual needs, the first alignment mark 51 and the second alignment mark 52 can be easily removed after the alignment is completed to avoid taking up extra space.

[0053] This case also protects a method for preparing an LED chip structure 1000, which is used to prepare the above-mentioned LED chip structure 1000, combined with Figure 7 As shown, the preparation method comprises the following steps:

[0054] S1: Provide a first substrate 10, including a first surface and a second surface opposite to the first surface; the first substrate 10 can be selected from sapphire or silicon wafer.

[0055] S2: preparing the reflective layer 20 on the first surface, including: preparing the reflective layer 20 and the first alignment mark 51 on the first surface, wherein the first alignment mark 51 has the same height as the reflective layer 20. Specifically, the reflective layer 20 and the first alignment mark 51 are prepared on the first substrate 10 by metal evaporation.

[0056] S3: providing a light-emitting device 30 , including a light-emitting region 31 and an electrode region 32 disposed in the light-emitting region 31 .

[0057] S4: Bonding the reflective layer 20 and the light-emitting area 31, the light-emitting direction of the light-emitting area 31 is facing away from the reflective layer 20. The reflective layer 20 is located between the light-emitting area 31 and the first substrate 10, and the light-emitting direction is toward the electrode area 32. The reflective layer 20 enhances the reflection effect of light, and the molding process of the reflective layer 20 is simple, and the combination process with the light-emitting device 30 is also simple, which is applicable to more application scenarios.

[0058] The “providing a light emitting device 30” comprises the steps of:

[0059] S31: providing a temporary substrate 200 carrying a light emitting device 30, the temporary substrate 200 having a second alignment mark 52, the second alignment mark 52 being used to match and connect with the first alignment mark 51 along its thickness direction. The second alignment mark 52 is formed on the temporary substrate 200 by metal evaporation.

[0060] When the light emitting device 30 is subsequently transferred to the first substrate 10 , the second alignment mark 52 is also transferred to the first substrate 10 .

[0061] In one embodiment, the electrode region 32 of the light emitting device 30 is connected to the temporary substrate 200 via a bonding adhesive, and the bonding adhesive is pre-coated on the temporary substrate 200 .

[0062] The temporary substrate 90 may be one or more of epoxy resin polymers, polymethyl methacrylate (PMMA), polydimethylsiloxane (PDMS) and polyetheretherketone (PEEK). These materials have good physical and chemical properties and are suitable for temporary fixing and processing of LED chips.

[0063] After the reflective layer 20 and the light-emitting area 31 are bonded, it is equivalent to that the temporary substrate 200 carrying the light-emitting device 30 is bonded to the first substrate 10. In this case, the temporary substrate 200 needs to be separated by curing under high pressure and high temperature environment.

[0064] S32: The “providing a temporary substrate 200 carrying the light-emitting devices 30” includes: providing a substrate 300, manufacturing a plurality of light-emitting devices 30 on the substrate 300, and transferring the plurality of light-emitting devices 30 to the temporary substrate 200 by laser stripping.

[0065] The substrate 300 is provided with a peeling layer, and the light emitting devices 30 are formed on the peeling layer. The peeling layer can be separated from the substrate 300 during laser peeling, so that a plurality of light emitting devices 30 are peeled off the substrate 300. Through the laser peeling technology, a plurality of light emitting devices 30 are peeled off from the substrate 300 and transferred to the temporary substrate 200. Laser mass transfer is a high-precision transfer technology that uses laser energy to selectively peel off materials in a specific area, which can ensure the integrity and positioning accuracy of each light emitting device 30.

[0066] The substrate 300 may be sapphire or glass, and the epitaxial structure of the light emitting device 30 is grown on the substrate 300. The material may be gallium nitride (GaN) or gallium phosphide (GaP) or gallium indium arsenic phosphide (GaInAsP), which are commonly used semiconductor materials with different photoelectric properties and are suitable for LED chips of different colors. Patterning, etching and other steps are continued on the epitaxial structure to produce the shapes and structures of several adjacent and spaced light emitting devices 30.

[0067] S41: "Bonding and connecting the light-reflecting layer 20 and the light-emitting area 31" includes the steps of: bonding the temporary substrate 200 carrying the light-emitting device 30 and the second alignment mark 52 to the first substrate 10, and transferring the light-emitting device 30 and the second alignment mark 52 to connect to the first substrate 10 at the same time. Specifically, the light-emitting area 31 of the light-emitting device is bonded to the light-reflecting layer 20 on the first substrate 10, and the second alignment mark 52 is connected to the first alignment mark 52. After bonding, the separate temporary substrate 200 needs to be separated. It can be understood that it is equivalent to transferring the light-emitting device 30 and the second alignment mark 52 to connect to the first substrate 10.

[0068] S5: Filling the area between adjacent light-emitting devices 30 to form a filling portion 40 to encapsulate the first substrate 10 and the plurality of light-emitting devices 30. The filling portion 40 has a top surface and a first side surface higher than the electrode region 32, the first side surface is an inclined surface 411, and a wiring layer is made on the electrode region 32, the top surface of the filling portion 40, and the first side surface 411, so as to facilitate connecting the light-emitting device 30 to the circuit through the electrode region 32.

[0069] In the following, a method for preparing an LED chip structure 100 will be completely and coherently introduced in combination with the specific embodiments of the present invention:

[0070] Combination Figure 2 As shown, first, a substrate 300 is provided, a peeling layer is made on the surface of the substrate 300, and the epitaxial structure of the light-emitting device 30 is made on the surface of the peeling layer. Steps such as gluing, photolithography, and etching are performed on the epitaxial structure to further produce a plurality of light-emitting devices 30 with the same shape and size.

[0071] Combination Figure 3 As shown, a temporary substrate 200 is provided, a second alignment mark 52 is made in advance on the same surface of the temporary substrate 200 and a bonding glue is pre-coated, a plurality of light-emitting devices 30 on the substrate 300 are transferred to the temporary substrate 200 by laser peeling and setting intervals, and the electrode areas 32 of the plurality of light-emitting devices 30 are fixed to the surface of the temporary substrate 200 by bonding glue.

[0072] Combination Figure 4 As shown, a first substrate 10 is provided, and a first alignment mark 51 and a reflective layer 20 are prepared in advance on the first surface of the first substrate 10 by metal evaporation, and a transparent adhesive can be coated in advance on the surface of the reflective layer 20. The first alignment mark 51 and the reflective layer 20 are spaced apart and have the same height.

[0073] Combination Figure 5 As shown, the first alignment mark 51 and the second alignment mark 52 are aligned and matched to improve the alignment accuracy. The light-emitting area 31 and the reflective layer 20 are bonded and connected, and then cured under high pressure and high temperature to separate a separate temporary substrate 200. In this way, several of the light-emitting devices 30 are further transferred to the first substrate 10. It can be understood that the second alignment mark 52 is also transferred to the first alignment mark 51 of the first substrate 10.

[0074] Combination Figure 6 As shown, the filling and plastic encapsulation are performed, and a wiring layer is made on the top surface of the filling portion 40 and the electrode area 32. Finally, according to actual needs, the first substrate 10 can be cut according to the combination of different light-emitting devices 30 to obtain the required minimum unit LED chip structure 100.

[0075] In practice, the first substrate 10 is not entirely provided with the reflective layer 20, but a plurality of reflective layers 20 arranged in strips and at intervals are made on the first substrate 10 according to the required size of the LED chip structure, and a plurality of light-emitting devices 30 are arranged on each reflective layer 20, which is equivalent to not making a reflective layer 20 in the area where the light-emitting devices 30 are not provided on the first substrate 10. During the final cutting, each reflective layer 20 and the light-emitting devices 30 provided thereon are correspondingly cut into an LED chip structure.

[0076] The beneficial effects of the present invention are as follows: a reflective layer 20 is formed on the first substrate 10, and a plurality of light-emitting devices 30 are bonded to the reflective layer 20 of the first substrate 10, and the reflective layer 20 is used to enhance the light-emitting effect of each light-emitting device 30 and reduce the cross-light phenomenon between adjacent light-emitting devices 30; the reflective layer 20 is formed on the first substrate 10, and then connected to the light-emitting device 30 by transparent glue, and the process is simple; the temporary substrate 200 and the first substrate 10 are aligned with each other by the first alignment mark 51 and the second alignment mark 52, so as to improve the alignment accuracy.

[0077] It can be formed by referring to any of the technical solutions provided above, and will not be described in detail here.

[0078] It should be understood that although this specification is described according to implementation modes, not every implementation mode contains only one independent technical solution. This description of the specification is only for the sake of clarity. Those skilled in the art should regard the specification as a whole. The technical solutions in each implementation mode may also be appropriately combined to form other implementation modes that can be understood by those skilled in the art.

[0079] The series of detailed descriptions listed above are only specific descriptions of feasible implementation methods of the present invention. They are not intended to limit the scope of protection of the present invention. Any equivalent implementation methods or changes that do not deviate from the technical spirit of the present invention should be included in the scope of protection of the present invention.

Claims

1. An LED chip structure, characterized in that: include: A first substrate comprising a first surface and a second surface opposite to the first surface; A light emitting device, comprising a light emitting area, wherein the light emitting direction of the light emitting area is away from the first substrate; A reflective layer is formed on the first surface, and a surface of the reflective layer facing away from the first substrate is bonded to the light emitting area.

2. The LED chip structure according to claim 1, characterized in that: The reflective layer is a metal material layer.

3. The LED chip structure according to claim 1, characterized in that: The light emitting area is bonded to the light reflecting layer by transparent adhesive.

4. The LED chip structure according to claim 1, characterized in that: A plurality of the light emitting devices are arranged at intervals on the surface of the reflective layer, and the LED chip structure comprises a filling portion filled between adjacent light emitting devices.

5. The LED chip structure according to claim 4, characterized in that: The filling portion includes a bump higher than the light emitting device, the bump has a top surface and a first side surface connecting the top surface and the light emitting device, and the first side surface is an inclined surface.

6. The LED chip structure according to claim 4, characterized in that: The LED chip structure comprises a first alignment mark arranged on the first surface, and a second alignment mark matching the first alignment mark along the thickness direction of the LED chip structure, wherein the first alignment mark and the reflective layer have the same height.

7. The LED chip structure according to claim 6, characterized in that: The filling portion covers the outer side surface of the light emitting device and the outer side surface of the reflective layer, and there is a gap between the filling portion and the first alignment mark.

8. A method for preparing an LED chip structure, characterized in that: The following steps are involved: Providing a first substrate, comprising a first surface and a second surface opposite to the first surface; Preparing a reflective layer on the first surface; Providing a light emitting device, including a light emitting region; The light reflecting layer and the light emitting area are bonded and connected, and the light emitting direction of the light emitting area is opposite to the light reflecting layer.

9. The method for preparing an LED chip structure according to claim 8, characterized in that: “Preparing a reflective layer on the first surface” includes: preparing a reflective layer and a first alignment mark on the first surface, wherein the first alignment mark has the same height as the reflective layer.

10. The method for preparing an LED chip structure according to claim 9, characterized in that: "Providing a light-emitting device" comprises the steps of: A temporary substrate carrying a light emitting device is provided, wherein the temporary substrate has a second alignment mark, and the second alignment mark is used to match and connect with the first alignment mark along a thickness direction thereof.

11. The method for preparing an LED chip structure according to claim 10, characterized in that: "Bonding and connecting the reflective layer and the light-emitting area" includes the steps of: bonding a temporary substrate carrying a light-emitting device and a second alignment mark to a first substrate, and transferring the light-emitting device and the second alignment mark to the first substrate at the same time.

12. The method for preparing an LED chip structure according to claim 10, characterized in that: "Providing a temporary substrate carrying light-emitting devices" includes: providing a substrate, manufacturing a plurality of light-emitting devices on the substrate, and transferring the plurality of light-emitting devices to the temporary substrate by laser stripping.

13. The method for preparing an LED chip structure according to claim 8, characterized in that: Includes steps: Filling the area between adjacent light-emitting devices to form a filling portion, wherein the filling portion has a top surface higher than the light-emitting device and a first side surface, wherein the first side surface is an inclined surface; A wiring layer is formed on the light emitting device, the top surface of the filling portion and the first side surface.

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