Secondary chamfering method, secondary chamfering system, computing equipment and medium

Abstract

The invention relates to a secondary chamfering method, a secondary chamfering system, computing equipment and a medium. In one aspect, a secondary chamfering method is provided, comprising: measuring the thickness of a silicon wafer to be subjected to secondary chamfering to determine whether the measured value is an expected value, the expected value being determined according to the profile of a correction groove of a grinding wheel for secondary chamfering; when the measured value is not the expected value, adjusting the thickness of the silicon wafer to enable the thickness to reach the expected value; and performing secondary chamfering on the adjusted silicon wafer by using the correction groove. Therefore, the edge of the incoming silicon wafer with fluctuating thickness can reach the expected shape after being subjected to secondary chamfering processing.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor processing technology, and in particular, to a secondary chamfering method, a secondary chamfering system, a computing device and a medium. Background Art

[0002] Silicon wafers are important basic materials in the semiconductor field. The existing preparation processes mainly include crystal pulling, slicing, primary chamfering, grinding, secondary chamfering, chemical etching, polishing, cleaning, etc., which can produce silicon wafers with smooth surface and good edge roughness.

[0003] The purpose of secondary chamfering is to process the edge of the silicon wafer into a desired shape to improve the utilization rate of the edge of the silicon wafer. Usually, a grinding wheel is used to perform secondary chamfering on the edge of the silicon wafer. The grinding wheel includes a correction groove with a specific groove shape, wherein the groove shape is determined according to the thickness of the silicon wafer to be processed and the desired edge shape. By grinding the edge of a silicon wafer with a specific thickness with the help of the correction groove, the edge can be processed into a desired shape.

[0004] However, in actual production, the thickness of the incoming silicon wafers is not completely consistent, but fluctuates. Therefore, when the edges of the incoming silicon wafers are subjected to secondary chamfering processing using a correction groove with a fixed groove shape, the shapes of the edges of the resulting silicon wafers may be inconsistent. Summary of the invention

[0005] This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.

[0006] The purpose of the present disclosure is to provide a secondary chamfering method that can enable the edge of an incoming silicon wafer with fluctuating thickness to reach a desired shape after secondary chamfering.

[0007] To achieve the above object, according to a first aspect of the present disclosure, a secondary chamfering method is provided, which comprises: Measuring the thickness of the silicon wafer to be chamfered twice to determine whether the measured value is an expected value, wherein the expected value is determined according to the groove shape of the correction groove of the grinding wheel used for the secondary chamfering; When the measured value is not the expected value, adjusting the thickness of the silicon wafer so that the thickness reaches the expected value; and The adjusted silicon wafer is chamfered a second time using the correction groove.

[0008] In some embodiments, when the measured value is not the expected value, adjusting the thickness of the silicon wafer to make the thickness reach the expected value may include: when the measured value is greater than the expected value, corroding or grinding the silicon wafer to make the thickness reach the expected value.

[0009] In some embodiments, when the measured value is not the expected value, adjusting the thickness of the silicon wafer so that the thickness reaches the expected value may include: when the measured value is less than the expected value, setting a film layer on the entire surface of the silicon wafer so that the thickness reaches the expected value.

[0010] In some embodiments, the film layer can be obtained by growing a film, laminating a film, or spraying on a silicon wafer.

[0011] In some embodiments, the film layer can be obtained by attaching a polymer material film on a silicon wafer.

[0012] In some embodiments, the secondary chamfering method may further include: grinding the front and back sides of the silicon wafer after the secondary chamfering to remove the film layer.

[0013] In some implementations, the expected value may be a numerical range.

[0014] According to another aspect of the present disclosure, a secondary chamfering system is also provided, comprising: A detection unit, used for measuring the thickness of the silicon wafer to be chamfered for the second time, so as to determine whether the measured value is an expected value, wherein the expected value is determined according to the groove type of the correction groove of the grinding wheel used for the second time chamfering; an adjusting unit, for adjusting the thickness of the silicon wafer to reach the expected value when the measured value is not the expected value; and The processing unit includes a grinding wheel and is used for performing secondary chamfering on the adjusted silicon wafer through the correction groove of the grinding wheel.

[0015] According to another aspect of the present disclosure, a computing device is provided. The computing device includes a processor and a memory. The processor is used to execute instructions stored in the memory to implement the secondary chamfering method according to any of the above embodiments.

[0016] According to another aspect of the present disclosure, a computer-readable storage medium is provided, which stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the secondary chamfering method according to any of the above embodiments.

[0017] According to the above-mentioned embodiment, by adjusting the thickness of the incoming silicon wafer with thickness fluctuation to the expected thickness value determined according to the groove shape of the correction groove of the grinding wheel used for secondary chamfering, the correspondence between the groove shape of the correction groove and the thickness of the silicon wafer can be utilized, and the edge of the silicon wafer whose thickness is adjusted to the expected value can be subjected to secondary chamfering processing using the correction groove, so that the edge can be processed into a desired shape. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The features and advantages of the embodiments of the present disclosure will become more easily understood through the following description with reference to the accompanying drawings. The drawings are not drawn to scale and some features may be enlarged or reduced to show details of specific parts. In the drawings: Figure 1 The process of performing secondary chamfering on a silicon wafer is schematically shown.

[0019] Figure 2 The flowchart of the secondary chamfering method according to the embodiment of the present disclosure is shown.

[0020] Figure 3 Schematic diagram of the structure of a silicon wafer provided with a film layer according to an embodiment of the present disclosure.

[0021] Figure 4 It is a schematic structural diagram of a secondary chamfering system according to an embodiment of the present disclosure.

[0022] Figure 5 is a schematic structural diagram of a computing device according to an embodiment of the present disclosure.

[0023] In the drawings, the same or corresponding technical features, parts or components are represented by the same or corresponding reference numerals. DETAILED DESCRIPTION

[0024] The present disclosure is described in detail below with reference to the accompanying drawings by means of exemplary embodiments. It should be noted that the following detailed description of the present disclosure is only for illustrative purposes and is by no means a limitation of the present disclosure.

[0025] It should be noted that, for the sake of clarity, not all features of a specific implementation are described and illustrated in the specification and drawings. Furthermore, in order to avoid unnecessary details that obscure the technical solution focused on by the present disclosure, only the device structures and parts closely related to the technical solution of the present disclosure are described and illustrated in the specification and drawings, while other details that are not closely related to the technical content of the present disclosure and are known to those skilled in the art are omitted.

[0026] Figure 1 The process of performing secondary chamfering on a silicon wafer is schematically shown. Figure 1 , a silicon wafer W to be subjected to secondary chamfering processing and a grinding wheel 100 for performing secondary chamfering processing on the silicon wafer W are shown.

[0027] The grinding wheel 100 includes a correction groove 100a. As mentioned above, the groove shape of the correction groove 100a is determined according to the thickness of the silicon wafer W to be processed and the shape of the edge to be processed. During processing, when the grinding wheel 100 is in contact with the silicon wafer W, the correction groove 100a can grind the edge of the silicon wafer W through the relative rotation of the grinding wheel 100 and the silicon wafer W, thereby replicating the groove shape of the correction groove 100a to the edge of the silicon wafer W, thereby obtaining the desired edge shape.

[0028] In actual production, since the thickness of the incoming silicon wafers is not completely consistent, when the edges of the incoming silicon wafers are subjected to secondary chamfering processing using the correction groove 100 a having a fixed groove shape, the shapes of the edges of the obtained silicon wafers may be inconsistent.

[0029] In this regard, according to an embodiment of the present disclosure, a secondary chamfering method is provided. Figure 2 , the steps of the secondary chamfering method are described in detail.

[0030] In the secondary chamfering method, first, the thickness of the silicon wafer W to be secondary chamfered is measured to determine whether the measured value is an expected value, wherein the expected value is determined according to the groove shape of the correction groove 100a of the grinding wheel 100 used for secondary chamfering.

[0031] Since the groove shape of the correction groove 100a is determined according to the thickness of the silicon wafer W to be processed and the shape of the edge to be processed, there is a correspondence between the groove shape of the correction groove 100a and the thickness of the silicon wafer W. In other words, the specific thickness of the corresponding silicon wafer W, that is, the expected value of the thickness, can be determined by the groove shape of the correction groove 100a.

[0032] When the measured value obtained by measuring the thickness of the silicon wafer W is not the expected value, the thickness of the silicon wafer W is adjusted so that the thickness reaches the expected value.

[0033] In the case where the measured value is not the expected value, if the silicon wafer W is subjected to secondary chamfering using the correction groove 100a having the specific groove type, the expected edge shape cannot be obtained. In this regard, in the embodiment of the present disclosure, the thickness of the silicon wafer W is adjusted according to the difference between the measured value and the expected value. For example, when the measured value is less than the expected value, the silicon wafer W is thickened to reach the expected value, or, when the measured value is greater than the expected value, the silicon wafer W is thinned to reach the expected value.

[0034] Finally, the adjusted silicon wafer W is chamfered twice using the correction groove 100 a.

[0035] Since the thickness of the silicon wafer W has reached the expected value at this time, corresponding to the specific groove shape of the correction groove 100a, the edge of the silicon wafer W with the expected thickness can be processed into the desired shape by performing secondary chamfering on the edge of the silicon wafer W through the correction groove 100a.

[0036] In this way, even if the thickness of the incoming silicon wafers is not completely consistent, the edges of each silicon wafer after the secondary chamfering process can still have a desired shape.

[0037] It is conceivable that the expected value may be a numerical value or a numerical range. The numerical value may be, for example, 800um, 810um, 820um, etc. The numerical range may be, for example, 785um to 840um.

[0038] In the case where the expected value is a numerical value, when the thickness of the silicon wafer W is adjusted to the numerical value, the edges of each silicon wafer after the secondary chamfering process can have a consistent expected shape. In the case where the expected value is a numerical range, when the thickness of the silicon wafer W is adjusted to be within the numerical range, the edges of each silicon wafer after the secondary chamfering process can have an expected shape within a shape range, wherein within the shape range, the shapes of the edges are very similar and all meet expectations.

[0039] It can be understood that, when the measured value is an expected value, the silicon wafer W can be directly chamfered twice using the correction groove 100 a without adjustment, thereby making the edge of the silicon wafer W have a desired shape.

[0040] In some embodiments, when the measured value is not the expected value, adjusting the thickness of the silicon wafer W so that the thickness reaches the expected value may include: when the measured value is greater than the expected value, corroding or polishing the silicon wafer W so that the thickness reaches the expected value.

[0041] Etching is a method of removing the surface material of the silicon wafer by chemical means, which is usually carried out using a specific chemical solution (such as a mixed solution of hydrofluoric acid, nitric acid, etc.). Through the contact between the chemical solution and the silicon wafer W, the surface material of the silicon wafer can be gradually removed, thereby reducing the thickness of the silicon wafer. For example, by controlling the etching time and the solution concentration, the surface material of the silicon wafer of a desired thickness (for example, several microns) can be removed, so that the thickness of the silicon wafer W reaches the desired value.

[0042] Grinding is a method of physically removing the surface material of the silicon wafer, which is usually performed using equipment such as a grinding machine. Through the contact and friction between the grinding disc of the grinding machine and the silicon wafer W, the surface material of the silicon wafer can be gradually removed, thereby reducing the thickness of the silicon wafer. For example, by controlling the grinding depth and speed with the help of a grinding machine, the surface material of the silicon wafer of a desired thickness can be removed, so that the thickness of the silicon wafer W reaches the desired value.

[0043] In some embodiments, reference Figure 3 When the measured value is not the expected value, adjusting the thickness of the silicon wafer W so that the thickness reaches the expected value may include: when the measured value is less than the expected value, setting a film layer S on the entire surface of the silicon wafer W so that the thickness reaches the expected value.

[0044] The film layer S can be obtained, for example, by growing a film on the silicon wafer W, laminating the film, or spraying the film.

[0045] For film growth, a film layer S may be grown on the entire surface of the silicon wafer W using a deposition process such as chemical vapor deposition, physical vapor deposition, etc. In this case, the film layer S may be, for example, a film layer of a material such as silicon dioxide, which may have good chemical stability, so as to increase the thickness of the silicon wafer without changing the electrical properties of the silicon wafer. During the film growth process, for example, the film layer S of the expected thickness may be obtained by controlling deposition process parameters such as gas flow, temperature, time, etc., so that the thickness of the silicon wafer W reaches the desired value.

[0046] For film lamination, for example, a polymer material film may be attached to the entire surface of the silicon wafer W to form a film layer S. The polymer material film may be tightly integrated with the surface of the silicon wafer W through a curing process, for example, so that the film layer S has high stability. The film layer S of a desired thickness may be obtained by setting the thickness of the polymer material film, so that the thickness of the silicon wafer W reaches a desired value.

[0047] For spraying, for example, a specific solution can be sprayed on the entire surface of the silicon wafer W by a spraying device to form a film layer S. After spraying, for example, the film layer S can be tightly integrated with the surface of the silicon wafer W through a drying and curing process. The film layer S of a desired thickness can be obtained by adjusting the concentration of the spraying solution, the number of spraying times, the spraying speed, and other conditions, so that the thickness of the silicon wafer W reaches a desired value.

[0048] In the case of disposing a film layer S on the silicon wafer W, in some embodiments, the secondary chamfering method may further include: grinding the front and back sides of the silicon wafer W after the secondary chamfering to remove the film layer S.

[0049] After the secondary chamfering process is performed on the edge of the silicon wafer W, the edge of the silicon wafer W is free of the film layer S, while the front and back sides of the silicon wafer W still retain the film layer S. In this case, the film layer S on the front and back sides of the silicon wafer W needs to be removed to restore the front and back sides of the silicon wafer W to their original state.

[0050] The film layer S on the front and back sides of the silicon wafer W can be removed by grinding process such as double-sided grinding after the secondary chamfering process to restore the front and back sides to their original state for subsequent processing.

[0051] According to another aspect of the present disclosure, referring to Figure 4 , a secondary chamfering system 1 is also provided. The secondary chamfering system 1 includes a detection unit 20, an adjustment unit 30 and a processing unit 10.

[0052] The detection unit 20 is used to measure the thickness of the silicon wafer W to be chamfered twice to determine whether the measured value is an expected value, wherein the expected value is determined according to the groove shape of the correction groove 100a of the grinding wheel 100 used for secondary chamfering.

[0053] The adjusting unit 30 is used to adjust the thickness of the silicon wafer W to make the thickness reach the expected value when the measured value is not the expected value.

[0054] The processing unit 10 includes a grinding wheel 100 and is used to perform secondary chamfering on the adjusted silicon wafer W through the correction groove 100 a of the grinding wheel 100 .

[0055] It is conceivable that the detection unit 20 may be, for example, a thickness measuring instrument capable of performing thickness measurement and size determination, and the adjustment unit 30 may be, for example, a deposition device, a film attaching device, or a spraying device.

[0056] In some embodiments, the secondary chamfering system 1 may further include a transfer unit (not shown). The transfer unit is configured to: When the detection unit 20 determines that the measured value of the thickness of the silicon wafer W is not the expected value, the silicon wafer W is transferred to the adjustment unit 30 to adjust the thickness, and after the thickness adjustment is completed, the silicon wafer W is transferred to the processing unit 10 to perform secondary chamfering processing; and When the detection unit 20 determines that the measured value of the thickness of the silicon wafer W is an expected value, the silicon wafer W is directly transferred to the processing unit 10 to perform a secondary chamfering process.

[0057] In some embodiments, the secondary chamfering system 1 may further include a grinding unit (not shown) configured to grind the front and back sides of the silicon wafer W after the silicon wafer W provided with the film layer S is secondary chamfered to remove the film layer S on the front and back sides.

[0058] According to another aspect of the present disclosure, referring to Figure 5 , a computing device 4 is also provided.

[0059] The computing device 4 includes a processor 41 and a memory 42 . The processor 41 is used to execute instructions stored in the memory 42 to implement the secondary chamfering method as described in the above various embodiments.

[0060] In some examples, the computing device 4 may be at least one of a smart phone, a smart watch, a desktop computer, a laptop, a virtual reality terminal, an augmented reality terminal, a wireless terminal, and a laptop computer. The computing device 4 has a communication function and can access a wired network or a wireless network. The computing device 4 may generally refer to one of a plurality of terminals, and those skilled in the art may know that the number of the above terminals may be more or less. In some examples, the computing device 4 may receive data based on the wired network or wireless network accessed. It is understandable that the computing device 4 undertakes the calculation and processing work of the technical solution of the present disclosure, and the present disclosure does not limit this.

[0061] Optionally, the processor 41 uses various interfaces and lines to connect various parts of the entire computing device, and executes various functions of the computing device and processes data by running or executing instructions, programs, code sets or instruction sets stored in the memory 42, and calling data stored in the memory 42. Optionally, the processor 41 can be implemented in at least one hardware form of digital signal processing (DSP), field-programmable gate array (FPGA), and programmable logic array (PLA). The processor 41 can integrate one or a combination of a central processing unit (CPU), a graphics processing unit (GPU), a neural network processor (NPU), and a baseband chip. Among them, the CPU mainly processes the operating system, user interface, and application programs; the GPU is responsible for rendering and drawing the content to be displayed on the touch display; the NPU is used to realize the artificial intelligence (AI) function; and the baseband chip is used to process wireless communications. It can be understood that the above-mentioned baseband chip may not be integrated into the processor 41, and it can be implemented by a single chip.

[0062] The memory 42 may include a random access memory (RAM) or a read-only memory (ROM). Optionally, the memory 42 includes a non-transitory computer-readable storage medium. The memory 42 may be used to store instructions, programs, codes, code sets, or instruction sets. The memory 42 may include a program storage area and a data storage area, wherein the program storage area may store instructions for implementing an operating system, instructions for at least one function (such as a touch function, a sound playback function, an image playback function, etc.), instructions for implementing the above various method embodiments, etc.; the data storage area may store data created according to the use of the computing device, etc.

[0063] In addition, those skilled in the art can understand that the structure of the computing device shown in the above drawings does not constitute a limitation on the computing device, and the computing device may include more or fewer components than shown in the figure, or combine certain components, or arrange the components differently. For example, the computing device also includes a display screen, a camera assembly, a microphone, a speaker, a radio frequency circuit, an input unit, a sensor (such as an acceleration sensor, an angular velocity sensor, a light sensor, etc.), an audio circuit, a WiFi module, a power supply, a Bluetooth module and other components, which will not be described in detail here.

[0064] According to yet another aspect of the present disclosure, a computer-readable storage medium is provided, which stores at least one instruction, and the at least one instruction is used to be executed by a processor to implement the secondary chamfering method as described in the various embodiments above.

[0065] Those skilled in the art should be aware that in one or more of the above examples, the functions described in the present disclosure can be implemented using hardware, software, firmware, or any combination thereof. When implemented using software, these functions can be stored in a computer-readable medium or transmitted as one or more instructions or codes on a computer-readable medium. Computer-readable media include computer storage media and communication media, wherein communication media include any media that facilitates the transmission of computer programs from one place to another. Storage media can be any available media that can be accessed by a general or special-purpose computer.

[0066] In the present disclosure, although the present disclosure has been described with reference to exemplary embodiments, it should be understood that the present disclosure is not limited to the specific embodiments described and shown in detail herein. Those skilled in the art may make various changes to the exemplary embodiments without departing from the scope defined by the claims of the present disclosure.

[0067] The features mentioned and / or shown in the above description of the exemplary embodiments of the present disclosure may be combined in the same or similar manner into one or more other embodiments, combined with the features in other embodiments or substituted for the corresponding features in other embodiments. The technical solutions obtained by these combinations or substitutions shall also be deemed to be included in the protection scope of the present disclosure.

Claims

1. A secondary chamfering method, characterized in that: include: Measuring the thickness of the silicon wafer to be chamfered twice to determine whether the measured value is an expected value, wherein the expected value is determined according to the groove type of the correction groove of the grinding wheel used for the secondary chamfering; When the measured value is not the expected value, adjusting the thickness of the silicon wafer so that the thickness reaches the expected value; and The adjusted silicon wafer is chamfered twice using the correction groove.

2. The secondary chamfering method according to claim 1, characterized in that: When the measured value is not the expected value, adjusting the thickness of the silicon wafer so that the thickness reaches the expected value includes: when the measured value is greater than the expected value, corroding or polishing the silicon wafer so that the thickness reaches the expected value.

3. The secondary chamfering method according to claim 1, characterized in that: When the measured value is not the expected value, adjusting the thickness of the silicon wafer so that the thickness reaches the expected value includes: when the measured value is less than the expected value, setting a film layer on the entire surface of the silicon wafer so that the thickness reaches the expected value.

4. The secondary chamfering method according to claim 3, characterized in that: The film layer is obtained by growing a film, attaching a film or spraying on the silicon wafer.

5. The secondary chamfering method according to claim 3, characterized in that: The film layer is obtained by attaching a polymer material film on the silicon wafer.

6. The secondary chamfering method according to claim 3, characterized in that: Also includes: The front and back sides of the silicon wafer after the secondary chamfering are ground to remove the film layer.

7. The secondary chamfering method according to claim 1, characterized in that: The expected value is a numerical range.

8. A secondary chamfering system, characterized in that: include: A detection unit, used for measuring the thickness of the silicon wafer to be chamfered for the second time, so as to determine whether the measured value is an expected value, wherein the expected value is determined according to the groove type of the correction groove of the grinding wheel used for the second time chamfering; an adjusting unit, configured to adjust the thickness of the silicon wafer so that the thickness reaches the expected value when the measured value is not the expected value; and The processing unit includes the grinding wheel and is used for performing secondary chamfering on the adjusted silicon wafer through the correction groove of the grinding wheel.

9. A computing device, characterized in that The invention comprises a processor and a memory, wherein the processor is used to execute instructions stored in the memory to implement the secondary chamfering method according to any one of claims 1 to 7.

10. A computer-readable storage medium, characterized in that: At least one instruction is stored, and the at least one instruction is used to be executed by a processor to implement the secondary chamfering method according to any one of claims 1 to 7.

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