Surface evaporation source and evaporation method

Abstract

The invention provides a surface evaporation source and an evaporation method, and belongs to the technical field of displays. The surface evaporation source comprises an evaporation container and a micro-arc baffle, the micro-arc baffle is arranged at the top of the evaporation container, and the evaporation container internally comprises a main baffle, a scattering sheet, an evaporation material baffle and an evaporation material container which are sequentially arranged below the micro-arc baffle; the number of the evaporation material containers is 2n, the number of layers of the evaporation material baffles is n, and n is larger than 1. The scattering sheet has a through hole; a crystal oscillator probe is further arranged in the evaporation container and arranged on the inner side wall of the evaporation container, and the vertical height of the crystal oscillator probe is located between the scattering piece and the evaporation material baffle. According to the method, an indirect evaporation mode of an existing surface source technology is abandoned, a direct evaporation mode is adopted, operation is easy, and mass production is achieved. And the number of the evaporation material containers is limited to be 2n, and multi-material co-evaporation can be achieved.

Description

Technical Field

[0001] The present invention relates to the technical field of displays, and in particular to a surface evaporation source and an evaporation method. Background Art

[0002] Currently, Micro OLED silicon-based micro-display devices are still mainly based on WOLED + color filter (CF) to achieve full color, but due to its obvious shortcomings (low brightness and low color gamut), the industry is currently conducting the production and development of Real RGB devices.

[0003] When manufacturing silicon-based microdisplay Real RGB devices, point sources or line sources are used for evaporation of OLED materials. To reduce the evaporation shadow, the distance from the evaporation source to the FMM target (TS distance) of the evaporation machine is very large, 800 to 1500 mm, which increases the chamber space and leads to a very low material utilization rate (<5%). Therefore, the manufacturing cost of Real RGB devices is greatly increased.

[0004] Related technology surface source deposition sources usually use point sources or line sources to evaporate OLED materials onto a metal transfer plate first, and then evaporate the evaporated materials vertically onto the substrate by heating the metal plate. This indirect evaporation method has many steps and is difficult to control, and it is impossible to achieve multi-material co-evaporation, and is not suitable for mass production of Micro OLED silicon-based micro displays. Summary of the invention

[0005] In view of this, the object of the present invention is to provide a surface evaporation source and an evaporation method. The surface evaporation source provided by the present invention does not require film layer conversion of a metal transfer plate, can realize multi-material co-evaporation, and is suitable for mass production.

[0006] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0007] The present invention provides a surface evaporation source, comprising: an evaporation container 8 and a micro-arc baffle 5; the micro-arc baffle 5 is arranged on the top of the evaporation container 8,

[0008] The evaporation container 8 includes a main baffle 4, a scattering sheet 3, an evaporation material baffle 2 and an evaporation material container 1 which are sequentially arranged below the micro-arc baffle 5; the number of the evaporation material containers 1 is 2n, the number of layers of the evaporation material baffle 2 is n, and n>1; the scattering sheet 3 has a through hole;

[0009] A crystal oscillator probe 6 is also provided in the evaporation container 8. The crystal oscillator probe 6 is provided on the inner wall of the evaporation container 8, and the vertical height of the crystal oscillator probe 6 is located between the scattering sheet 3 and the evaporation material baffle (2).

[0010] Preferably, the vertical distance between the main baffle plate 4 and the scattering sheet 3 is 30-100 mm.

[0011] Preferably, the through hole is a circular hole, and the diameter of the circular hole is 20-30 mm.

[0012] Preferably, the distance between the edges of two adjacent circular holes is 5 to 10 mm.

[0013] Preferably, the number of the crystal oscillator probes 6 is the same as the number of the evaporation material containers 1 .

[0014] Preferably, the bottom and side walls of the evaporation material container 1 are both provided with heating components.

[0015] Preferably, a heat source is provided between the main baffle plate 4 and the scattering sheet 3 in a vertical distance, and the heat source is located on the side wall of the evaporation container 8 .

[0016] Preferably, it is characterized in that the number of the evaporation material containers 1 is 4, and the number of the crystal oscillator probes 6 is 4.

[0017] The present invention also provides an evaporation method, which utilizes the surface evaporation source described in the above technical solution.

[0018] Preferably, the height difference between the center of the upper surface of the micro-arc baffle 5 and the evaporation substrate is 200-300 nm.

[0019] The present invention provides a surface evaporation source, comprising an evaporation container 8 and a micro-arc baffle 5; the micro-arc baffle 5 is arranged on the top of the evaporation container 8, and the evaporation container 8 comprises a main baffle 4, a scattering sheet 3, an evaporation material baffle 2 and an evaporation material container 1 which are arranged in sequence below the micro-arc baffle 5; the number of the evaporation material containers 1 is 2n, the number of layers of the evaporation material baffle 2 is n, and n>1; the scattering sheet 3 has a through hole; the evaporation container 8 is also provided with a crystal oscillator probe 6, the crystal oscillator probe 6 is arranged on the inner side wall of the evaporation container 8, and the vertical height of the crystal oscillator probe 6 is located between the scattering sheet 3 and the evaporation material baffle (2).

[0020] Compared with the prior art, the present invention has the following beneficial effects:

[0021] Figure 1 This is a schematic diagram of the structure of a MicroOLED silicon-based micro display device. Figure 2 This is a schematic diagram of the structure of a silicon-based microdisplay Real RGB device. Figure 3 This is a schematic diagram of the process of preparing a point evaporation source for a silicon-based microdisplay Real RGB device. Figure 4Schematic diagram of the process of line evaporation source for preparing silicon-based micro-display Real RGB devices. When evaporating with point source or line source, in order to reduce the evaporation shadow, the TS distance will be very large, and the chamber space will be enlarged, resulting in low material utilization. Figure 5 Schematic diagram of the process of surface evaporation source for preparing silicon-based microdisplay RealRGB devices. First, a point source or line source is used to evaporate the OLED material onto a metal transfer plate, and then the material is vertically evaporated onto the substrate by heating the metal plate. This indirect evaporation method has many steps and is difficult to control, and it cannot achieve co-evaporation of multiple materials, and is not suitable for mass production of MicroOLED silicon-based microdisplays.

[0022] The present invention abandons the indirect evaporation method of the existing surface source technology (which requires the use of a metal rotating plate) and adopts a direct evaporation method, which is simple to operate and has mass production. In addition, the present invention limits the number of evaporation material containers 1 to 2n, which can solve the disadvantage that the existing surface source can only evaporate one material and realize multi-material co-evaporation.

[0023] Furthermore, after the evaporation material passes through the scattering sheet 3, the evaporation material can be evenly dispersed in the area between the main baffle 4 and the scattering sheet 3 by limiting the through holes of the scattering sheet 3 (see Figure 7 In the blue dotted line portion), the distribution density and size of the through holes can be adjusted according to the actual effect.

[0024] Furthermore, when the evaporation starts, the main baffle 4 is opened. When the evaporation material passes through the micro-arc baffle 5, the evaporation direction of the evaporation material can be adjusted according to the opening direction of the micro-arc baffle 5 to achieve vertical evaporation, which can effectively reduce the evaporation shadow area and is suitable for high-pixel-density Micro OLED Real RGB silicon-based micro-display products (pixel density ≥ 3000ppi).

[0025] Furthermore, the present invention stipulates that the bottom and side walls of the evaporation material container 1 are provided with heating components to ensure that the evaporation material in the entire evaporation material container 1 is heated evenly; the area between the main baffle plate 4 and the scattering plate 3 is provided with a heating source, which can adjust the temperature in the area between the main baffle plate 4 and the scattering plate 3 to prevent the evaporation material from adhering to the inner wall of the evaporation container 8 between the main baffle plate 4 and the scattering plate 3 due to low temperature, thereby reducing the loss of the evaporation material.

[0026] The data of the embodiment show that the present invention is applicable to high ppi Micro OLED Real RGB silicon-based micro-display products (pixel density>3000ppi), the material utilization rate can be increased to more than 50%, and the production cycle can be increased to more than 50%.

[0027] The present invention also provides a vapor deposition method, which further limits the height difference (TS distance) between the center of the upper surface of the micro-arc baffle 5 and the vapor deposition substrate to 200-300nm, thereby reducing the TS height of the vapor deposition machine and greatly improving the utilization rate of the vapor deposition material. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a schematic diagram of the structure of MicroOLED silicon-based micro display device;

[0029] Figure 2 This is a schematic diagram of the structure of a silicon-based micro-display Real RGB device;

[0030] Figure 3 Schematic diagram of the process of point evaporation source for preparing silicon-based micro-display Real RGB device;

[0031] Figure 4 Schematic diagram of the process of line evaporation source for preparing silicon-based micro-display Real RGB device;

[0032] Figure 5 Schematic diagram of the process of surface evaporation source for preparing silicon-based micro-display Real RGB device;

[0033] Figure 6 It is a schematic diagram of the evaporation angle θ and TS during point / line source and surface source evaporation in the related technology;

[0034] Figure 7 It is a schematic diagram of the structure of the surface evaporation source of the present invention;

[0035] Figure 8 It is a schematic diagram of a structure in which the number of evaporation material containers 1 is four;

[0036] Fig. 9 It is a schematic structural diagram of the evaporation material baffle 2 when the number of the evaporation material containers 1 is 4;

[0037] Fig.10 A schematic diagram of the evaporation material baffle 2 having two layers and rotating;

[0038] Fig.11 A schematic diagram of a heating component ① at the bottom of the evaporation material container 1, a heating component ② at the side wall, and a heating source ③ in the area between the main baffle 4 and the scattering sheet 3;

[0039] Fig.12 It is a schematic diagram of a surface evaporation source and an evaporation substrate during evaporation in the present invention;

[0040] Figure 7 and 121 is the evaporation material container, 2 is the evaporation material baffle, 3 is the scattering plate, 4 is the main baffle, 5 is the micro-arc baffle, 6 is the crystal oscillator probe, 7 is the evaporation substrate, 8 is the evaporation container, and 9 is the rotating part. DETAILED DESCRIPTION

[0041] The present invention provides a surface evaporation source, comprising: an evaporation container 8 and a micro-arc baffle 5; the micro-arc baffle 5 is arranged on the top of the evaporation container 8,

[0042] The evaporation container 8 includes a main baffle 4, a scattering sheet 3, an evaporation material baffle 2 and an evaporation material container 1 which are sequentially arranged below the micro-arc baffle 5; the number of the evaporation material containers 1 is 2n, the number of layers of the evaporation material baffle 2 is n, and n>1; the scattering sheet 3 has a through hole;

[0043] A crystal oscillator probe 6 is also provided in the evaporation container 8. The crystal oscillator probe 6 is provided on the inner wall of the evaporation container 8, and the vertical height of the crystal oscillator probe 6 is located between the scattering sheet 3 and the evaporation material baffle (2).

[0044] Figure 7 is a schematic diagram of the structure of the surface evaporation source of the present invention, Fig.12 Schematic diagram of the surface evaporation source and the evaporation substrate during evaporation of the present invention, wherein 1 is the evaporation material container, 2 is the evaporation material baffle, 3 is the scattering sheet, 4 is the main baffle, 5 is the micro-arc baffle, 6 is the crystal probe, 7 is the evaporation substrate, 8 is the evaporation container, and 9 is the rotating component. Figure 7 and 12 The surface vapor deposition source of the present invention will be described in detail.

[0045] Unless otherwise specified, the present invention has no particular limitation on the materials of the components of the surface evaporation source, and any material well known to those skilled in the art may be used.

[0046] The surface evaporation source of the present invention comprises an evaporation container 8 , a micro-arc baffle 5 is provided on the top of the evaporation container 8 , and the evaporation material passes through the micro-arc baffle 5 and then is evaporated onto the evaporation substrate 7 .

[0047] In the present invention, during the evaporation, the height difference between the center of the upper surface of the micro-arc baffle 5 and the evaporation substrate 7 is preferably 200-300nm, specifically 200, 250 or 300nm, which reduces the height of the evaporation machine TS and can greatly improve the utilization rate of the evaporation material.

[0048] In the present invention, the middle area of ​​the micro-arc baffle 5 is a large opening, and the aperture of the large opening is preferably 150 mm. The small openings near the edge are gradually dense, and the aperture of the small openings in the edge area is preferably reduced from 30 mm to 10 mm, and is evenly arranged. The micro-arc shape of the micro-arc baffle 5 has the effect of gathering the evaporated material, and can be used to adjust the surface source evaporation angle to achieve vertical evaporation. The utilization rate of the evaporated material is increased to more than 50%. When the evaporation starts, the main baffle 4 is opened, and the evaporated material passes through the micro-arc baffle 5. The evaporation direction of the evaporation material can be adjusted according to the opening direction of the micro-arc baffle 5, which can effectively reduce the evaporation shadow area. It is suitable for Micro OLED Real RGB silicon-based micro-display products with high pixel density (pixel density>3000ppi, preferably>5000ppi).

[0049] Figure 6 It is a schematic diagram of the evaporation angle θ and TS during point / line source and surface source evaporation in the related technology. Figure 6 In the embodiment, θ is 80-85°, TS is 800-1500mm, shadow>0.8μm, while the evaporation angle θ used by the surface evaporation source of the present invention can reach 90°, TS is 200-300nm, shadow<0.2μm, and the device pixel density is ≥3000ppi, and more preferably ≥5000ppi.

[0050] The evaporation container 8 of the surface evaporation source of the present invention includes a main baffle 4, a scattering plate 3, an evaporation material baffle 2 and an evaporation material container 1 which are arranged in sequence below the micro-arc baffle 5; the number of the evaporation material containers 1 is 2n, the number of layers of the evaporation material baffle 2 is n layers, and n>1; the scattering plate 3 has a through hole to allow the evaporation material to pass through.

[0051] In the present invention, the evaporation material container 1 is preferably a crucible, and the material of the crucible is preferably Ti, Ta, polybutylene naphthalate (PBN), AlN or graphite.

[0052] In the present invention, the vertical distance between the main baffle plate 4 and the scattering sheet 3 is preferably 30-100 mm to avoid excessive loss of evaporation material.

[0053] In the present invention, the through hole is a circular hole, and the diameter of the circular hole is preferably 20 to 30 mm, specifically 20, 25 or 30 mm; the distance between the edges of two adjacent circular holes is preferably 5 to 10 mm, specifically 5, 6, 7, 8, 9 or 10 mm; the distribution density and size of the circular holes can be adjusted according to the actual effect. After the evaporation material passes through the scattering sheet 3, the evaporation material can be evenly dispersed in the area between the main baffle 4 and the scattering sheet 3 by limiting the through holes of the scattering sheet 3 (see Figure 7 The blue dotted line part).

[0054] In the present invention, the material of the scattering sheet 3 is preferably a thermal conductive material, more preferably Cu or Al.

[0055] The surface evaporation source of the present invention comprises a crystal oscillator probe 6 , which is disposed on the inner wall of the evaporation container 8 , and the vertical position of the crystal oscillator probe 6 is disposed between the scattering sheet 3 and the evaporation material baffle 2 .

[0056] In the present invention, the number of the crystal oscillator probes 6 is preferably the same as the number of the evaporation material containers 1. In the present invention, the crystal oscillator probes 6 are preferably located directly above each evaporation material container 1.

[0057] When the evaporation material container 1 rotates, the crystal oscillator probe 6 preferably rotates synchronously with the evaporation material container 1 , and the rotation speed of the synchronous rotation is preferably 5-15 rpm, specifically 5, 10 or 15 rpm.

[0058] In the present invention, it is preferred that the evaporation material of the same material is added to the containers at the opposite corners of the evaporation material container 1 .

[0059] In a specific embodiment of the present invention, the number of the evaporation material containers 1 is preferably four, the number of the evaporation material baffles 2 is preferably two, and the number of the crystal oscillator probes 6 is preferably four.

[0060] Figure 8 It is a structural schematic diagram of four evaporation material containers 1 , the evaporation material includes material A and material B, and evaporation materials of the same material are added to containers at opposite corners of the evaporation material container 1 .

[0061] Fig. 9 It is a schematic diagram of the structure of the evaporation material baffle 2 when the number of the evaporation material containers 1 is 4. The evaporation material baffle 2 has 2 layers, and the structure of each layer is shown in 9. The slash area is the shielding area.

[0062] Fig.10 The number of layers of the evaporation material baffle 2 is 2, and the schematic diagram shows that when only material A is evaporated, the first layer of the evaporation material baffle 2 is opened and stopped at the opening of material A in the evaporation material container 1, and the second layer of the evaporation material baffle 2 blocks material B. If material A and material B are co-evaporated, the first layer of the evaporation material baffle 2 and the second layer of the evaporation material baffle 2 are both opened to the opening position.

[0063] Fig.11 It is a schematic diagram of the heating component ① at the bottom of the evaporation material container 1 , the heating component ② at the side wall, and the heating source ③ in the area between the main baffle 4 and the diffusion sheet 3 .

[0064] In a specific embodiment of the present invention, the bottom of the evaporation material container 1 is preferably provided with a heating component ①, and the side wall of the evaporation material container 1 is preferably provided with a heating component ② to ensure that the evaporation material in the entire evaporation material container 1 is heated evenly.

[0065] In the present invention, a heating source ③ is preferably provided between the vertical distance between the main baffle plate 4 and the scattering plate 3. The heating source ③ is preferably located on the side wall of the evaporation container 8, and can adjust the temperature in the area between the main baffle plate 4 and the scattering plate 3 to prevent the evaporation material from adhering to the inner wall of the evaporation container 8 between the main baffle plate 4 and the scattering plate 3 due to the low temperature, thereby reducing the loss of the evaporation material.

[0066] In the present invention, the heating source ③ preferably extends below the scattering sheet 3 to conduct heat to the scattering sheet 3 to avoid the accumulation of the vapor deposition material here and cause pore blockage.

[0067] In the present invention, the heating component ①, the heating component ② and the heating source ③ are preferably heating wires.

[0068] In the present invention, the scattering sheet 3, the evaporation material baffle 2, the evaporation material container 1 and the crystal oscillator probe 6 together constitute the bottom area. Figure 7 Indicated by the red dotted line.

[0069] In the present invention, the evaporation material baffle 2 and the evaporation material container 1 are preferably independently rotated around the axis to achieve the effect of full-surface evaporation.

[0070] The present invention preferably achieves rotation around the axis through the rotating component 9.

[0071] The present invention also provides an evaporation method, which utilizes the surface evaporation source described in the above technical solution.

[0072] In the present invention, the height difference between the center of the upper surface of the micro-arc baffle 5 and the evaporation substrate 7 is preferably 200-300 nm, specifically 200, 250 or 300 nm, which reduces the height of the evaporation machine TS and can greatly improve the utilization rate of the evaporation material.

[0073] The evaporation method of the present invention is preferably used to prepare a MicroOLED Real RGB microdisplay device.

[0074] The specific method of the evaporation in the present invention is not particularly limited and can be implemented in a manner well known to those skilled in the art.

[0075] The technical solutions in the present invention will be described clearly and completely below in conjunction with the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0076] Example 1

[0077] Suitable for the design of evaporation surface source for the production of MicroOLED Real RGB micro display devices. The surface evaporation source structure is as follows: Figure 7 As shown, it includes: a vapor deposition container 8 and a micro-arc baffle 5, the micro-arc baffle 5 is arranged on the top of the vapor deposition container 8, and the vapor deposition material passes through the micro-arc baffle 5 and is vapor-deposited onto the vapor deposition substrate 7. The vapor deposition container 8 includes a main baffle 4, a scattering sheet 3, a vapor deposition material baffle 2 and a vapor deposition material container 1 which are sequentially arranged below the micro-arc baffle 5; the scattering sheet 3 has a through hole to allow the vapor deposition material to pass through; a crystal oscillator probe 6, the crystal oscillator probe 6 is arranged on the inner wall of the vapor deposition container 8, and the vertical position of the crystal oscillator probe 6 is arranged between the scattering sheet 3 and the vapor deposition material baffle 2; the main baffle 4, the scattering sheet 3, the vapor deposition material baffle 2, the vapor deposition material container 1 and the crystal oscillator probe 6 are arranged in the vapor deposition container 8, and the interior is specifically:

[0078] The evaporation container 8 is a crucible, and the number of crucibles is 4 for example. Figure 8 The crucible is made of Ti, the evaporation materials include material A and material B, the evaporation materials of the same material are added to the diagonal crucibles, and the heating components at the crucibles are set as follows Fig.11 ①② in the middle are heating wires;

[0079] The number of layers of the evaporation material baffle 2 is 2, and the structure of each layer is as follows: Fig. 9 , the slash area is the shielding area. When only material A is evaporated, the first layer of the evaporation material baffle 2 is opened and stopped at the opening of material A in the evaporation material container 1, and the second layer of the evaporation material baffle 2 shields material B. If material A and material B are co-evaporated, the first layer of the evaporation material baffle 2 and the second layer of the evaporation material baffle 2 are both opened to the opening;

[0080] Four crystal oscillator probes 6 are arranged above the evaporation material baffle 2, corresponding to the four crucibles. When the bottom area rotates, the crystal oscillator probes 6 rotate together with it, with a rotation speed of 5 rpm. The rotation of the bottom area is achieved by the rotating component 9;

[0081] The scattering plate 3 is placed above the crystal oscillator probe 6 and does not rotate with the bottom. The diameter of the circular hole on the scattering plate 3 is 20 mm, and the distance between the edges of two adjacent circular holes is 10 mm. The material of the scattering plate 3 is Cu. A heating source ③ is provided between the main baffle 4 and the scattering plate 3 (see Fig.11 ), the heating source ③ extends below the scattering sheet 3;

[0082] The vertical distance between the scattering sheet 3 and the main baffle 4 is 90 mm;

[0083] The middle area of ​​the micro-arc direction guide plate 5 is a large opening with an aperture of 150 mm. The small openings gradually become denser near the edge, and the aperture of the small openings in the edge area decreases from 30 mm to 10 mm. They are evenly arranged to achieve vertical evaporation. The height difference between the center of the micro-arc baffle 5 and the evaporation substrate 7 is 200 nm.

[0084] When evaporation is performed using the evaporation surface source of this embodiment, the material consumption in the crucible is 0.2302g, the thickness of the evaporation film is 1000nm, the weight of the evaporation substrate is 53.0498g, the weight of the substrate after evaporation is 53.1665g, the mass of the material on the substrate is 0.1167g, and the utilization rate of the evaporation material is 50.70%.

[0085] Production cycle test

[0086] The evaporation surface source of this embodiment is used for evaporation, and then Real RGB is prepared. The time of each step in the specific preparation process is as follows:

[0087] Hole injection layer (HIL) 150s, hole transport layer (HTL) 200s, electron beam lithography (EBL) 150s, R&G&B sub-pixel area 600s, hole blocking layer (HBL) 50s, electron transport layer (ETL) 300s, electron injection layer (EIL) 50s, total inter-cavity transfer 360s, the total time required is 1860s.

[0088] Comparative Example

[0089] use Figure 2 The point source of the structure shown is used for evaporation, the material consumption in the crucible is 2.0666g, the thickness of the evaporated film is 1000nm, the weight of the evaporated substrate is 52.9486g, the weight of the substrate after evaporation is 53.0584g, the mass of the material on the substrate is 0.1098g, and the utilization rate of the evaporation material is 5.31%.

[0090] Production cycle test

[0091] The point source evaporation surface source of this comparative example is used for evaporation, and then WOLED+color filter is prepared. The time of each step in the specific preparation process is as follows:

[0092] Hole injection layer (HIL) 150s, hole transport layer (HTL) 200s, electron beam lithography (EBL) 200s, R&G sub-pixel area 500s, hole blocking layer (HBL) 50s, electron transport layer (ETL) 300s, n-type charge generation layer (n-CGL) 100s, p-type charge generation layer (p-CGL) 300s, hole injection layer (HIL) 50s, hole transport layer (HTL) 300s, electron beam lithography (EBL) 200s, B sub-pixel area 300s, hole blocking layer (HBL) 100s, electron transport layer (ETL) 300s, electron injection layer (EIL) 50s, the total transfer between cavities is 720s, and the total time required is 3820s.

[0093] By comparing the production cycles of Example 1 and the comparative example, it can be seen that the production cycle can be increased to more than 50%, reaching 51.31%, by using the evaporation surface source of the present invention for evaporation.

[0094] The above description is only a preferred embodiment of the present invention and does not limit the present invention in any form. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention, and these improvements and modifications should also be regarded as the protection scope of the present invention.

Claims

1. A surface evaporation source, characterized in that: include: A vapor deposition container (8) and a micro-arc baffle (5); the micro-arc baffle (5) is arranged on the top of the vapor deposition container (8), The evaporation container (8) comprises a main baffle (4), a scattering sheet (3), a evaporation material baffle (2) and a evaporation material container (1) which are sequentially arranged below the micro-arc baffle (5); the number of the evaporation material containers (1) is 2n, the number of layers of the evaporation material baffle (2) is n, and n>1; the scattering sheet (3) has a through hole; A crystal oscillator probe (6) is also provided in the evaporation container (8); the crystal oscillator probe (6) is provided on the inner side wall of the evaporation container (8), and the vertical height of the crystal oscillator probe (6) is located between the scattering sheet (3) and the evaporation material baffle (2).

2. The surface evaporation source according to claim 1, characterized in that: The vertical distance between the main baffle (4) and the scattering plate (3) is 30 to 100 mm.

3. The surface evaporation source according to claim 1, characterized in that: The through hole is a circular hole, and the diameter of the circular hole is 20 to 30 mm.

4. The surface evaporation source according to claim 3, characterized in that: The distance between the edges of two adjacent circular holes is 5 to 10 mm.

5. The surface evaporation source according to claim 1, characterized in that: The number of the crystal oscillator probes (6) is the same as the number of the evaporation material containers (1).

6. The surface evaporation source according to claim 1, characterized in that: The bottom and side walls of the evaporation material container (1) are both provided with heating components.

7. The surface evaporation source according to claim 1 or 6, characterized in that: A heat source is provided between the main baffle (4) and the scattering plate (3) at a vertical distance, and the heat source is located on the side wall of the evaporation container (8).

8. The surface evaporation source according to claim 1, characterized in that: The number of the evaporation material containers (1) is 4, and the number of the crystal oscillator probes (6) is 4.

9. A vapor deposition method, characterized in that: The surface evaporation source according to any one of claims 1 to 8 is used.

10. The vapor deposition method according to claim 9, characterized in that: The height difference between the center of the upper surface of the micro-arc baffle (5) and the vapor deposition substrate is 200-300 nm.

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