Gas mixing structure of atomic layer deposition equipment, gas inlet device and atomic layer deposition method

Abstract

The invention discloses a gas mixing structure of atomic layer deposition equipment, a gas inlet device and an atomic layer deposition method, and the gas mixing structure comprises a gas inlet layer which comprises a first gas inlet layer and a second gas inlet layer at the bottom of the first gas inlet layer; the first main air inlet pipeline penetrates through the air inlet layer; the first air inlet layer comprises upper air inlet pipelines connected with the first air inlet pipelines in a one-to-one correspondence mode. The second air inlet layer comprises a lower-layer air inlet pipeline connected with the first main air inlet pipeline and the corresponding upper-layer air inlet pipeline on the same layer; and the upper-layer air inlet pipeline and the lower-layer air inlet pipeline which are connected with each other are respectively positioned in the adjacent air inlet layers and form a second air inlet pipeline. The upper-layer gas inlet pipelines correspond to the first gas inlet pipelines in a one-to-one mode, and the lower-layer gas inlet pipelines correspond to the upper-layer gas inlet pipelines, so that the probability that different precursors react in advance in the gas mixing structure is reduced, and the upper-layer gas inlet pipelines and the lower-layer gas inlet pipelines which are connected are located in the adjacent gas inlet layers. And the difficulty that the second air inlet pipeline is connected with the first main air inlet pipeline and the first air inlet pipeline is reduced.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of semiconductor manufacturing, and in particular to a gas mixing structure, a gas intake device and an atomic layer deposition method of an atomic layer deposition device. Background Art

[0002] The process of manufacturing semiconductor structures usually includes the step of depositing film layers on the wafer. Nowadays, as the process nodes continue to shrink, some key film layers are only a few atoms thick, and one of the technologies for developing these micro structures is the atomic layer deposition process (Automatic Layer Deposition, ALD).

[0003] The atomic layer deposition process is a film preparation technology that can achieve atomic-level precise control by growing layer by layer. A reaction cycle generally includes two self-limiting reactions. The first step is to introduce the first precursor into the process chamber and adsorb it on the surface of the wafer to a saturated state to complete the first self-limiting reaction; the second step is to introduce a purge gas into the process chamber to purge the first precursor and by-products in the process chamber; the third step is to introduce the second precursor into the process chamber and react it with the first precursor on the surface of the wafer in the process chamber to generate an atomic-level film layer; the fourth step is to introduce a purge gas into the process chamber to purge the precursor and by-products in the process chamber to complete a reaction cycle. The atomic layer deposition process controls the thickness of the film layer by controlling the number of cycles.

[0004] However, at present, the gas mixing structure of atomic layer deposition equipment still needs to be improved. Summary of the invention

[0005] The problem solved by the embodiments of the present invention is to provide a gas mixing structure, a gas intake device and an atomic layer deposition method of an atomic layer deposition device, so as to improve the uniformity and quality of a film layer formed by the atomic layer deposition process.

[0006] To solve the above problems, an embodiment of the present invention provides an air intake device, which is used to be connected to the air outlet end of the first air intake pipeline of the atomic layer deposition equipment, and is also used to be connected to the process chamber of the atomic layer deposition equipment, and the gas mixing structure includes: a plurality of stacked air intake layers, the air intake layers include a first air intake layer, and a second air intake layer located at the bottom of the first air intake layer; a first main air intake pipeline runs through the air intake layers and is used to be connected to the process chamber; wherein, the first air intake layer includes an upper air intake pipeline, and the upper air intake pipeline is connected to the first air intake pipeline in a one-to-one correspondence; the second air intake layer includes a lower air intake pipeline, and the lower air intake pipeline is connected to the first main air intake pipeline and the corresponding upper air intake pipeline located on the same layer; the connected upper air intake pipeline and the lower air intake pipeline are respectively located in adjacent air intake layers, and constitute a second air intake pipeline.

[0007] Correspondingly, an embodiment of the present invention also provides an air intake device for an atomic layer deposition device, comprising: a gas mixing structure as described in an embodiment of the present invention, which is used to mix a precursor and a purge gas, and the number of the second air intake pipelines is multiple; multiple first air intake pipelines, which are connected to the second air intake pipelines one by one, and the first air intake pipeline includes a precursor supply pipeline and a first purge gas supply pipeline, and the precursor supply pipeline and the first purge gas supply pipeline are connected in parallel to the gas mixing structure, and the gas outlet end of the precursor supply pipeline is used to provide a precursor to the gas mixing structure, and the gas outlet end of the first purge gas supply pipeline is used to provide a purge gas to the gas mixing structure.

[0008] Correspondingly, an embodiment of the present invention further provides an atomic layer deposition method, the atomic layer deposition method is performed using the air intake device described in the embodiment of the present invention, and the number of the first air intake pipelines is greater than or equal to 3, the atomic layer deposition method includes: performing a plurality of deposition processes for forming different target film layers; any one deposition process includes one or more sub-deposition processes, and the steps of the sub-deposition processes include: using a precursor supply pipeline of the first air intake pipeline corresponding to the target film layer, and introducing a corresponding type of precursor into a process chamber via the gas mixing structure; after introducing the corresponding type of precursor into the process chamber, A first purge gas supply pipeline corresponding to the current precursor supply pipeline is used to perform a first purge treatment; after the first purge treatment, a precursor supply pipeline of another first air inlet pipeline corresponding to the target film layer is used to introduce a corresponding type of precursor into the process chamber via the gas mixing structure; after introducing a corresponding type of precursor into the process chamber using a precursor supply pipeline of another first air inlet pipeline, a second purge treatment is performed using the first purge gas supply pipeline corresponding to the current precursor supply pipeline; wherein, among the first air inlet pipelines corresponding to different deposition treatments, at least one first air inlet pipeline is different.

[0009] The mixing structure provided in an embodiment of the present invention includes multiple stacked air intake layers, the air intake layers include a first air intake layer and a second air intake layer located at the bottom of the first air intake layer, and a first main air intake pipeline runs through the air intake layers, wherein the first air intake layer includes an upper air intake pipeline connected to the first air intake pipeline in a one-to-one correspondence, the second air intake layer includes a lower air intake pipeline, the lower air intake pipeline is connected to the first main air intake pipeline and the corresponding upper air intake pipeline located on the same layer, the connected upper air intake pipeline and lower air intake pipeline are respectively located in adjacent air intake layers and constitute a second air intake pipeline. Since the upper air intake pipeline is connected to the first air intake pipeline one-to-one, and the lower air intake pipeline is connected to the corresponding upper air intake pipeline, it is beneficial to reduce the probability of different precursors contacting each other and reacting prematurely inside the mixing structure. Moreover, the connected upper air intake pipeline and lower air intake pipeline are respectively located in adjacent air intake layers, which is also beneficial to reduce the difficulty of connecting the second air intake pipeline to the first main air intake pipeline and the first air intake pipeline. BRIEF DESCRIPTION OF THE DRAWINGS

[0010] Figure 1 is a schematic cross-sectional view of an embodiment of a gas mixing structure of the present invention;

[0011] Figure 2 It is a top view of a first main air intake pipeline, a second sub-air intake pipeline and a lower air intake pipeline of an embodiment of an air mixing structure of the present invention;

[0012] Figure 3 is a top view of the first buffer pipeline of the gas mixing junction of the present invention;

[0013] Figure 4 is a top view of the second buffer pipeline of the gas mixing junction of the present invention;

[0014] Figure 5 is a schematic cross-sectional view of another embodiment of the gas mixing structure of the present invention;

[0015] Figure 6 is a simplified schematic diagram of an embodiment of an air intake device of the present invention;

[0016] Figure 7 It is a structural schematic diagram of an embodiment of an air intake device of the present invention;

[0017] Figure 8 is a flow chart of a sub-deposition process of the atomic layer deposition method of the present invention;

[0018] Fig. 9 is a flow chart of an embodiment of an atomic layer deposition method of the present invention;

[0019] Fig.10 Schematic diagram of pulses of precursors and corresponding purge gases in an embodiment of an atomic layer deposition method of the present invention;

[0020] Fig.11 is a flow chart of another embodiment of the atomic layer deposition method of the present invention;

[0021] Fig.12 Schematic diagram of pulses of precursors and corresponding purge gases according to another embodiment of the atomic layer deposition method of the present invention. DETAILED DESCRIPTION

[0022] Research has found that if the mixed gas structure is not effective in isolating different precursors, it will easily affect the uniformity and quality of the film layer formed by the atomic layer deposition process.

[0023] In order to solve the above technical problems, an embodiment of the present invention provides an air intake device, which is used to be connected to the air outlet end of the first air intake pipeline of the atomic layer deposition equipment, and is also used to be connected to the process chamber of the atomic layer deposition equipment, and the gas mixing structure includes: a plurality of stacked air intake layers, the air intake layers include a first air intake layer, and a second air intake layer located at the bottom of the first air intake layer; a first main air intake pipeline runs through the air intake layer and is used to be connected to the process chamber; wherein, the first air intake layer includes an upper air intake pipeline, and the upper air intake pipeline is connected to the first air intake pipeline in a one-to-one correspondence; the second air intake layer includes a lower air intake pipeline, and the lower air intake pipeline is connected to the first main air intake pipeline and the corresponding upper air intake pipeline located on the same layer; the connected upper air intake pipeline and the lower air intake pipeline are respectively located in adjacent air intake layers, and constitute a second air intake pipeline.

[0024] The scheme disclosed in the embodiment of the present invention includes multiple layers of stacked air intake layers, the air intake layers include a first air intake layer and a second air intake layer located at the bottom of the first air intake layer, and a first main air intake pipeline runs through the air intake layers, wherein the first air intake layer includes an upper air intake pipeline connected to the first air intake pipeline in a one-to-one correspondence, the second air intake layer includes a lower air intake pipeline, the lower air intake pipeline is connected to the first main air intake pipeline and the corresponding upper air intake pipeline located on the same layer, the connected upper air intake pipeline and lower air intake pipeline are respectively located in adjacent air intake layers and constitute a second air intake pipeline. Since the upper air intake pipeline is connected to the first air intake pipeline one-to-one, and the lower air intake pipeline is connected to the corresponding upper air intake pipeline, it is beneficial to reduce the probability of different precursors contacting each other and reacting prematurely inside the mixing structure. Moreover, the connected upper air intake pipeline and lower air intake pipeline are respectively located in adjacent air intake layers, which is also beneficial to reduce the difficulty of connecting the second air intake pipeline to the first main air intake pipeline and the first air intake pipeline.

[0025] In order to make the above-mentioned purposes, features and advantages of the embodiments of the present invention more obvious and understandable, specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0026] Figure 1 is a schematic cross-sectional view of an embodiment of a gas mixing structure of the present invention, Figure 2 1 is a top view of a first main air intake pipeline, a second sub-air intake pipeline and a lower air intake pipeline of an embodiment of a gas mixing structure of the present invention. Figure 3 is a top view of the first buffer pipeline of the gas mixing junction of the present invention, Figure 4 It is a top view of the second buffer pipeline of the gas mixing junction of the present invention.

[0027] refer to Figures 1 to 4 In this embodiment, the gas mixing structure 100 is used to connect to the gas outlet end of the first gas inlet pipeline of the atomic layer deposition device, and is also used to connect to the process chamber of the atomic layer deposition device. The gas mixing structure 100 includes: a stacked multi-layer gas inlet layer 110, the gas inlet layer 110 includes a first gas inlet layer 111, and a second gas inlet layer 112 located at the bottom of the first gas inlet layer 111; a first main gas inlet pipeline 120, which runs through the gas inlet layer 110 and is used to connect to the process chamber; Among them, the first air intake layer 111 includes an upper air intake pipeline 131, and the upper air intake pipeline 131 is connected to the first air intake pipeline one by one; the second air intake layer 112 includes a lower air intake pipeline 132, and the lower air intake pipeline 132 is connected to the first main air intake pipeline 120 located on the same layer and the corresponding upper air intake pipeline 131; the connected upper air intake pipeline 131 and lower air intake pipeline 132 are respectively located in adjacent air intake layers 110, and constitute the second air intake pipeline 130.

[0028] The air intake layer 110 is used to provide a spatial position for the second air intake pipeline 130; wherein the first air intake layer 111 is used to provide a spatial position for the upper air intake pipeline 131, and the second air intake layer 112 is used to provide a spatial position for the lower air intake pipeline 132.

[0029] Since the upper air intake pipeline 131 is connected to the first air intake pipeline one-to-one, and the lower air intake pipeline 132 is connected to the corresponding upper air intake pipeline 131, it is beneficial to reduce the probability of different precursors contacting each other and reacting prematurely inside the mixing structure 100. Moreover, the connected upper air intake pipeline 131 and lower air intake pipeline 132 are respectively located in adjacent air intake layers 110, which is also beneficial to reduce the difficulty of connecting the second air intake pipeline 130 to the first main air intake pipeline 120 and the first air intake pipeline.

[0030] Specifically, in the same second air intake pipeline 130, the upper air intake pipeline 131 includes a first sub-air intake pipeline 133 and a second sub-air intake pipeline 134, the first sub-air intake pipeline 133 is connected to the corresponding air outlet end of the first air intake pipeline, and the second sub-air intake pipeline 134 is connected to the corresponding lower air intake pipeline 132; wherein the cross-sectional shape of the second sub-air intake pipeline 134 is a closed ring (such as Figure 2 shown).

[0031] The cross-sectional shape of the second sub-intake pipeline 134 is a closed ring, which is beneficial to reduce the probability of leakage of the precursor in the second sub-intake pipeline 134 at the junction of adjacent intake layers 110, thereby helping to further reduce the probability of premature reaction of different precursors inside the mixing structure 100.

[0032] In other embodiments, the number of second sub-intake pipelines of the same upper-layer intake pipeline is plural, and they are connected to the lower-layer intake pipelines in a one-to-one relationship.

[0033] In this embodiment, there are multiple upper air intake pipelines 131 located at the same air intake layer 110 , which is beneficial for increasing the number of the second air intake pipelines 130 without increasing the longitudinal dimension of the mixing structure 100 .

[0034] As an example, the number of the upper air intake pipelines 131 located at the same air intake layer 110 is two. In other embodiments, the number of the upper air intake pipelines located at the same air intake layer can be greater than two, for example, three, four, five, etc.

[0035] It should be noted that, in the same air intake layer 110, when there are multiple upper air intake pipelines 131, the air intake ends of the multiple upper air intake pipelines 131 are located on different side walls of the air mixing structure 100, for example: located on the opposite side walls of the air mixing structure 100, or located on the spaced-apart side walls of the air mixing structure 100, or located on the adjacent side walls of the air mixing structure 100.

[0036] In this embodiment, the cross-sectional shape of the air intake layer 110 includes a regular polygon, which is convenient for adjusting the proportional relationship between the longitudinal dimension and the transverse dimension of the air mixing structure 100, thereby rationally planning the layout of the air mixing structure 100. Moreover, the cross-sectional shape of the air intake layer 110 includes a regular polygon, which is also convenient for reducing the difficulty of manufacturing the air intake layer 110.

[0037] As an example, the cross-sectional shape of the air intake layer 110 is a square.

[0038] In this embodiment, Figure 1As shown, the mixing structure 100 also includes: a sealing structure, located at the interface of two adjacent air intake layers 110, the sealing structure includes multiple circles of annular seals 140, the area surrounded by the innermost circle of the annular seals 140 is used as the central area I, the area between the two adjacent circles of the annular seals 140 is used as the annular area II, the first main air intake pipeline 120 is located in the central area I, and the air outlet end of the upper air intake pipeline 131 is located in the annular area II; wherein, when the number of the upper air intake pipelines 131 in the same air intake layer 110 is multiple, the air outlet ends of the upper air intake pipelines 131 of different second air intake pipelines 130 are respectively located in different annular areas II.

[0039] The multi-ring annular seal 140 is helpful to reduce the probability of the precursor in the second sub-intake pipeline 134 leaking at the interface of the adjacent intake layer 110. Moreover, when there are multiple upper intake pipelines 131 in the same intake layer 110, and the outlet ends of the upper intake pipelines 131 of different second intake pipelines 130 are respectively located in different annular regions II, the multi-ring annular seal 140 is also helpful to reduce the probability of the precursor in each second sub-intake pipeline 134 leaking at the interface of the adjacent intake layer 110, resulting in the early reaction of different precursors in the gas mixing structure 100.

[0040] Specifically, the annular seal 140 includes an annular sealing groove (not shown) and a sealing medium (not shown) located in the annular sealing groove.

[0041] More specifically, the material of the sealing medium is perfluororubber. Perfluororubber has good corrosion resistance and high temperature resistance; moreover, perfluororubber is not prone to problems such as penetration, cracking and pinholes. Therefore, using perfluororubber as the material of the sealing medium can easily make the sealing medium have a higher cleanliness.

[0042] It should be noted that, in the same second air inlet pipeline 130, the number of the lower air inlet pipelines 132 is multiple, and the air inlet ends of the multiple lower air inlet pipelines 132 are evenly arranged along the circumferential direction in the annular area II, which is beneficial for the precursor in the lower air inlet pipeline 132 to enter the first main air inlet pipeline 120 more evenly, thereby facilitating the precursor entering the process chamber more evenly, and further facilitating better uniformity in the thickness of the formed film layer.

[0043] In a specific embodiment, in the same second air intake pipeline 130 , the number of the lower air intake pipelines 132 is three.

[0044] The first main air inlet pipeline 120 is used to connect the second air inlet pipeline 130 and the process chamber.

[0045] In this embodiment, reference Figure 3 to Figure 4 , and combined with reference Figure 1 The gas mixing structure 100 further includes: a first buffer layer 141 located at the bottom of the second air intake layer 112, a second buffer layer 142 located at the bottom of the first buffer layer 141, and a third buffer layer 143 located at the bottom of the second buffer layer 142; the first buffer layer 141 includes a gas mixing pipeline 150 (such as Figure 1 As shown), the mixing pipeline 150 is connected to the first main intake pipeline 120; the second buffer layer 142 includes a first buffer pipeline 151 (as shown Figure 3 As shown), the air inlet end of the first buffer pipeline 151 is connected to the air outlet end of the mixing pipeline 150; the second buffer layer 142 and the third buffer layer 143 include a second buffer pipeline 152 (as shown Figure 4 As shown), the air inlet end of the second buffer line 152 is connected to the air outlet end of the first buffer line 151; wherein, either the first buffer line 151 or the second buffer line 152 is a clockwise line, and the other is a counterclockwise line.

[0046] The first buffer line 151 and the second buffer line 152 connected to each other can play a better buffering role on the precursor in the buffer line, so that the gas flow field of the precursor entering the process chamber is more uniform, which is beneficial to improving the process stability and the thickness uniformity of the formed film layer.

[0047] The present invention also provides a gas mixing structure according to another embodiment. Figure 5 It is a cross-sectional structural schematic diagram of another embodiment of the gas mixing structure of the present invention.

[0048] The similarities between the second embodiment and the first embodiment are not repeated here. The difference between the second embodiment and the first embodiment is that Figure 5 In this embodiment, the air intake layer 110 also includes: one or more interlayer air intake layers 113, located between the first air intake layer 111 and the second air intake layer 112, the interlayer air intake layer 113 includes an upper air intake pipeline 131 and a lower air intake pipeline 132, the lower air intake pipeline 132 in the interlayer air intake layer 113 is connected to the upper air intake pipeline 131 in the upper air intake layer 110; the lower air intake pipeline 132 in the second air intake layer 112 is connected to the upper air intake pipeline 131 in the upper interlayer air intake layer 113.

[0049] The air intake layer 110 further includes one or more sandwich air intake layers 113, which is beneficial for adjusting the proportional relationship between the longitudinal dimension and the transverse dimension of the mixing structure 100 while keeping the number of the second air intake pipelines 130 unchanged, thereby making full use of the plannable space and making the layout of the mixing structure 100 more reasonable.

[0050] As an example, the air intake layer 110 further includes an interlayer air intake layer 113 .

[0051] In this embodiment, when the air intake layer 110 includes an interlayer air intake layer 113, and the number of the upper air intake pipelines 131 located in the same air intake layer 110 is two, the air intake ends of the upper air intake pipelines 131 are located on opposite side walls of the air mixing structure 100. That is, the first air intake pipeline connected to the upper air intake pipeline 131 of the first air intake layer 111 is connected to the first main air intake pipeline 120 through the lower air intake pipeline 132 of the interlayer air intake layer 113, and is located on the first side wall (not marked) and the second side wall (not marked) of the air mixing structure 100 that are oppositely arranged; the first air intake pipeline connected to the upper air intake pipeline 131 of the interlayer air intake layer 113 is connected to the first main air intake pipeline 120 through the lower air intake pipeline 132 of the second air intake layer 112, and is located on the first side wall and the second side wall of the air mixing structure 100 that are oppositely arranged.

[0052] In other embodiments, when the air intake layer further includes an interlayer air intake layer, the number of upper air intake pipelines of each air intake layer may also be one.

[0053] It should be noted that, for the specific description of the gas mixing structure in the second embodiment, reference may be made to the relevant contents in the first embodiment, which will not be repeated here.

[0054] Correspondingly, the present invention also provides an air intake device for atomic layer deposition equipment. Figure 6 is a schematic diagram of an embodiment of an air intake device of the present invention, Figure 7 It is a schematic structural diagram of an air intake device according to an embodiment of the present invention.

[0055] refer to Figure 6 to Figure 7 , and combined with reference Figures 1 to 5In this embodiment, the air intake device 10 includes: the gas mixing structure 100 described in any embodiment of the present invention, which is used to mix the precursor and the purge gas, and the number of the second air intake pipelines 130 is multiple; multiple first air intake pipelines 200, which are connected to the second air intake pipelines 130 in a one-to-one correspondence, and the first air intake pipeline 200 includes a precursor supply pipeline 210 and a first purge gas supply pipeline 220, and the precursor supply pipeline 210 and the first purge gas supply pipeline 220 are connected to the gas mixing structure 100 in parallel, and the gas outlet end of the precursor supply pipeline 210 is used to provide the precursor to the gas mixing structure 100, and the gas outlet end of the first purge gas supply pipeline 220 is used to provide the purge gas to the gas mixing structure 100.

[0056] Wherein, the precursor refers to: a gaseous precursor.

[0057] The gas mixing structure 100 is used to connect the precursor supply pipeline 210 and the first purge gas supply pipeline 220 to the process chamber of the atomic layer deposition equipment.

[0058] Since the upper air intake pipeline 131 in the mixing structure 100 is connected to the first air intake pipeline 200 in a one-to-one correspondence, and the lower air intake pipeline 132 in the mixing structure 100 is connected to the corresponding upper air intake pipeline 131, it is beneficial to reduce the probability of different precursors contacting each other and reacting prematurely inside the mixing structure 100. Moreover, the connected upper air intake pipeline 131 and lower air intake pipeline 132 are respectively located in adjacent air intake layers 110, which is also beneficial to reduce the difficulty of connecting the second air intake pipeline 130 to the first main air intake pipeline 120 and the first air intake pipeline 200.

[0059] The precursor supply pipeline 210 is used to provide the precursor to the process chamber through the gas mixing structure 100 .

[0060] The first purge gas supply pipeline 220 is used to provide purge gas to the gas mixing structure 100 to purge the process chamber to remove residual precursors and prevent parasitic reactions.

[0061] It can be understood that the common gas outlet ends of the precursor supply pipeline 210 and the first purge gas supply pipeline 220 corresponding to each of the first gas inlet pipelines 200 are connected to the first main gas inlet pipeline 120 .

[0062] As an example, the purge gas includes one of an inert gas and nitrogen. Specifically, the purge gas includes one of argon, helium and nitrogen.

[0063] Specifically, the number of the first air inlet pipelines 200 is greater than or equal to 3, and at least three different precursors can be provided to the process chamber of the atomic layer deposition equipment, so that the atomic layer deposition equipment including the air inlet device 10 can not only prepare a film layer with a single material, but also prepare a film layer with a stacked structure of multiple materials, thereby helping to improve the diversity of the prepared film layers, and correspondingly improving the equipment utilization rate of the atomic layer deposition equipment; moreover, it is also helpful to reduce the time for wafer transmission between different process equipment, thereby helping to improve process efficiency and reduce the probability of wafer contamination.

[0064] More specifically, the air intake device 10 includes four first air intake pipelines 200. The precursor supply pipelines 210 of the four first air intake pipelines 200 can provide four different precursors.

[0065] In this embodiment, Figure 6 and Figure 7 As shown, the first air inlet pipeline 200 also includes a second main air inlet pipeline 230 and a three-way valve 240, the three-way valve 240 includes a first air inlet end 241, a second air inlet end 242 and a first air outlet end 243, the second main air inlet pipeline 230 connects the first air outlet end 243 with the mixing structure 100, the first air inlet end 241 is connected to the air outlet end of the precursor supply pipeline 210, and the second air inlet end 242 is connected to the air outlet end of the first purge gas supply pipeline 220; wherein, the first air inlet end 241 and the first air outlet end 243 are normally closed, and the second air inlet end 242 and the first air outlet end 243 are normally open.

[0066] There is a normally closed pipeline between the first gas inlet end 241 and the first gas outlet end 243, and there is a normally open pipeline between the second gas inlet end 242 and the first gas outlet end 243, that is, when the precursor supply pipeline 210 does not provide the precursor to the gas mixing structure 100, the corresponding first purge gas supply pipeline 220 provides the purge gas to the gas mixing structure 100. In other words, when a certain precursor supply pipeline 210 provides the corresponding precursor to the gas mixing structure 100, the corresponding first purge gas supply pipeline 220 does not provide the purge gas to the gas mixing structure 100, but the remaining first purge gas supply pipelines 220 provide the purge gas to the gas mixing structure 100, which can make it easier for the precursor to enter the process chamber from the gas mixing structure 100, and is also beneficial to make the precursor more evenly distributed in the gas mixing structure 100 and the process chamber, which is correspondingly beneficial to improving the thickness uniformity of the formed film layer, and also reduces the probability of the precursor backflowing into the second main gas inlet pipeline 230.

[0067] Moreover, when the precursor supply pipeline 210 does not provide the precursor to the gas mixing structure 100, the corresponding first purge gas supply pipeline 220 provides the purge gas to the gas mixing structure 100, so that the flow rate of the gas entering the process chamber through the gas mixing structure 100 is relatively stable, thereby making the internal pressure of the process chamber relatively stable, which is beneficial to making the process stability of the atomic layer deposition process better, and also beneficial to making the thickness uniformity of the formed film layer better.

[0068] During the purging step, at least three first purge gas supply pipelines 220 provide purge gas to the process chamber through the gas mixing structure 100, which is beneficial to improving the effect of the purging treatment on the process chamber, thereby improving the cleanliness of the process chamber.

[0069] Specifically, the air intake device also includes a transfer component 245; the transfer component 245 includes: a first transfer port 246, connecting the outlet end of the precursor supply pipeline 210 with the first air intake end 241; a second transfer port 247, connecting the outlet end of the first purge gas supply pipeline 220 with the second air intake end 242; a third transfer port 248, connecting the first air outlet end 243 with the second main air intake pipeline 230.

[0070] The adapter component 245 is used to connect the three-way valve 240 with the precursor supply pipeline 210 , the first purge gas supply pipeline 220 , and the second main air intake pipeline 230 .

[0071] In this embodiment, in each of the first air inlet pipelines 200, at least two of the precursor supply pipelines 210 are metal source precursor supply pipelines (not marked), which are used to provide different metal source precursors to facilitate the formation of a metal compound film layer or a metal single element film layer with a laminated structure composed of multiple materials.

[0072] Specifically, in each of the first air inlet pipelines 200 , at least one of the precursor supply pipelines 210 is a non-metal source precursor supply pipeline, and at least two of the precursor supply pipelines 210 are metal source precursor supply pipelines.

[0073] The non-metal source precursor supply pipeline is used to provide a non-metal source precursor, such as an oxygen source, a nitrogen source, etc.

[0074] More specifically, the oxygen source includes DI Water (deionized water), O2, O3, etc., and the nitrogen source includes NH3, etc.

[0075] As an example, among the four first air inlet pipelines 200, one of the first air inlet pipelines 200 is a non-metal source precursor supply pipeline (not marked) for providing an oxygen source or a nitrogen source, and three of the precursor supply pipelines 210 are metal source precursor supply pipelines for providing different metal source precursors.

[0076] In this embodiment, Figure 6 and Figure 7 It is shown that the air intake device 10 also includes a second purge gas supply pipeline 250, which is located at the top of the gas mixing structure 100. The second purge gas supply pipeline 250 is connected to the first main air intake pipeline 120 of the gas mixing structure 100, and is used to provide purge gas from the top of the gas mixing structure 100 to the inside of the gas mixing structure 100, which is beneficial to improve the effect of purging the process chamber, thereby helping to improve the cleanliness of the process chamber.

[0077] Moreover, in the process of the precursor supply pipeline 210 providing the precursor to the gas mixing structure 100, the second purge gas supply pipeline 250 also provides the purge gas to the gas mixing structure 100, which can make it easier for the precursor to enter the process chamber from the gas mixing structure 100, and is also beneficial for making the precursor more evenly distributed in the gas mixing structure 100, and correspondingly making the precursor more evenly distributed in the process chamber, which is beneficial to improve the thickness uniformity of the formed film layer.

[0078] Specifically, the number of the second purge gas supply pipeline 250 is one.

[0079] In this embodiment, Figure 6 and Figure 7 As shown, the air intake device also includes: a heating component 310, the heating component 310 includes one or both of a first heating component 311 and a second heating component 312, the first heating component 311 passes through the gas mixing structure 100, and the second heating component 312 is located at the connection position between the precursor supply pipeline 210 and the first purge gas supply pipeline 220 corresponding to at least one first air intake pipeline 200.

[0080] The heating component 310 is used to reduce the probability of precursor condensation, which is helpful to reduce the probability of precursor blocking various pipelines, thereby helping to improve the stability of the precursor intake volume entering the process chamber and the thickness uniformity of the formed film layer, thereby helping to improve the stability of the atomic layer deposition process.

[0081] It should be noted that, since in each of the first air inlet pipelines 200, at least two of the precursor supply pipelines 210 are metal source precursor supply pipelines for providing different metal source precursors; and since metal source precursors are more prone to condensation; therefore, in this embodiment, the second heating part 320 is located at the connection position between at least one of the metal source precursor supply pipelines and the corresponding first purge gas supply pipeline 220.

[0082] It should also be noted that the air intake device further includes: a temperature sensor 313, located at the side of the heating component 310 (such as Figure 7 As shown), the temperature sensor 313 is used to detect the working temperature of the heating component 310 through its probe; an isolating switch (not shown) is connected in series in the circuit where the heating component 310 is located, and the isolating switch is used to disconnect the circuit where the heating component 310 is located when the working temperature of the heating component 310 is greater than a preset value, so as to play a role of over-temperature protection.

[0083] The use of an over-temperature protection mechanism is beneficial to improving the safety of the equipment, for example: making the air intake device 10 comply with the electrical safety requirements of the "Environmental, Health and Safety Guidelines for Semiconductor Production Equipment", namely "SMEI-S2"; the use of an over-temperature protection mechanism is also beneficial to extending the service life of the equipment and making the stability of the prepared film layer better.

[0084] When the operating temperature of the heating component 310 is greater than a preset value, disconnecting the circuit where the heating component 310 is located is beneficial to reducing the aging rate of the components of the air intake device 10 (for example: the precursor supply pipeline 210, the first purge gas supply pipeline 220, the adapter component 245) and increasing the service life of the components of the air intake device 10.

[0085] Correspondingly, the present invention also provides an atomic layer deposition method. Figure 8 It is a flow chart of the sub-deposition process of the atomic layer deposition method of the present invention.

[0086] In this embodiment, the atomic layer deposition method is performed by the intake device 10 described in any embodiment of the present invention, and the number of the first intake pipes 200 is greater than or equal to 3, and the atomic layer deposition method includes: performing multiple deposition treatments for forming different target film layers; any deposition treatment includes one or more sub-deposition treatments.

[0087] Specifically, the sub-deposition process includes the following steps.

[0088] refer to Figure 8 , and combined with reference Figures 1 to 7, executing step S1: using the precursor supply pipeline 210 of the first air inlet pipeline 200 corresponding to the target film layer, introducing a corresponding type of precursor into the process chamber through the gas mixing structure 100.

[0089] A corresponding type of precursor is introduced into the process chamber through the gas mixing structure 100 so that the precursor is adsorbed on the wafer, thereby providing a process basis for the subsequent reaction of the precursor with another precursor.

[0090] refer to Figure 8 , and combined with reference Figures 1 to 7 , executing step S2: after introducing the corresponding type of precursor into the process chamber, using the first purge gas supply pipeline 220 corresponding to the current precursor supply pipeline 210 to perform a first purge treatment.

[0091] The first purge gas supply pipeline 220 corresponding to the current precursor supply pipeline 210 is used to perform the first purge process, so as to purge the process chamber through the gas mixing structure 100 to remove the residual precursor and prevent parasitic reactions.

[0092] refer to Figure 8 , and combined with reference Figures 1 to 7 , executing step S3: after the first purge treatment, using the precursor supply pipeline 210 of another first air inlet pipeline 200 corresponding to the target film layer, the corresponding type of precursor is introduced into the process chamber through the gas mixing structure 100.

[0093] A precursor supply line 210 of another first air inlet line 200 corresponding to the target film layer is used to introduce a corresponding type of precursor into the process chamber via the gas mixing structure 100, so that the other precursor reacts chemically with the precursor adsorbed on the wafer to form a target film layer on the wafer.

[0094] refer to Figure 8 , and combined with reference Figures 1 to 7 , execute step S4: after the precursor supply line 210 of another first air inlet line 200 is used to introduce the corresponding type of precursor into the process chamber, the first purge gas supply line 220 corresponding to the current precursor supply line 210 is used to perform a second purge treatment.

[0095] The current precursor supply pipeline 210 refers to: a precursor supply pipeline 210 of another first air intake pipeline 200 .

[0096] The first purge gas supply line 220 corresponding to the current precursor supply line 210 is used to perform a first purge process, so as to purge the process chamber through the gas mixing structure 100 to remove residual precursors and by-products, thereby preparing for the next deposition process.

[0097] Since different target film layers need to be formed, the precursor sources corresponding to the different target film layers are at least not completely the same. Therefore, among the first air inlet pipelines 200 corresponding to different deposition processes, at least one first air inlet pipeline 200 is different.

[0098] The following will provide a detailed description with reference to specific embodiments. Fig. 9 is a flow chart of an embodiment of the atomic layer deposition method of the present invention, Fig.10 is a pulse diagram of a precursor and a corresponding purge gas in an embodiment of an atomic layer deposition method of the present invention, Fig.11 is a flow chart of another embodiment of the atomic layer deposition method of the present invention, Fig.12 Schematic diagram of pulses of precursors and corresponding purge gases according to another embodiment of the atomic layer deposition method of the present invention.

[0099] It should be noted that in Fig.10 and Fig.12 In the figure, “0” indicates a pulse without gas injection (precursor or purge gas), and “1” indicates a pulse with gas injection (precursor or purge gas).

[0100] It can be understood that when the precursor is not injected into the process chamber, the purge gas corresponding to the precursor is injected into the process chamber.

[0101] In a specific embodiment, the atomic layer deposition method is used to form three different target film layers, and the specific steps of the atomic layer deposition method are as follows:

[0102] refer to Fig. 9 and 10 , and combined with reference Figures 1 to 7 , execute step S10: pre-process the wafer.

[0103] The wafer is pre-processed to place the wafer in a process position for a deposition process and to pre-heat the wafer.

[0104] refer to Fig. 9 and 10 , and combined with reference Figures 1 to 7 , execute step S20: after the pretreatment is completed, open the four first purge gas supply pipelines 220 and the one second purge gas supply pipeline 250 to introduce the purge gas into the process chamber through the gas inlet device 10.

[0105] refer to Fig. 9 and 10 , and combined with reference Figures 1 to 7 , performing a deposition process for forming a target film layer to form a first target film layer, wherein the deposition process for forming the first target film layer includes executing a sub-deposition process step S30.

[0106] It should be noted that the sub-deposition processing step S30 includes:

[0107] Execute step S1′: open the first precursor supply line 210, and open the normally closed line between the first gas inlet end 241 and the first gas outlet end 243 corresponding to the first precursor supply line 210, and introduce the corresponding precursor A into the process chamber through the gas mixing structure 100, and keep the other three lines of the first purge gas supply line 220 and the second purge gas supply line 250 open, and introduce purge gas into the process chamber through the gas mixing structure 100.

[0108] It should be noted that the amount of carrier gas entering the precursor supply device can usually be controlled by a flow controller, thereby controlling the amount of precursor entering the process chamber.

[0109] Execute step S2′: after introducing the corresponding precursor A into the process chamber, use the first first purge gas supply line 220 to perform a first purge treatment, and keep the remaining three first purge gas supply lines 220 and the second purge gas supply line 250 open.

[0110] Execute step S3′: after the first purge treatment, open the second precursor supply pipeline 210, and open the normally closed pipeline between the first gas inlet end 241 and the first gas outlet end 243 corresponding to the second precursor supply pipeline 210, and introduce the corresponding precursor B into the process chamber through the gas mixing structure 100; and keep the other three first purge gas supply pipelines 220 and the second purge gas supply pipelines 250 open.

[0111] Execute step S4′: after using the second precursor supply line 210 to introduce the corresponding precursor B into the process chamber, use the second first purge gas supply line 220 to perform a second purge treatment, and keep the remaining three first purge gas supply lines 220 and the second purge gas supply line 250 open.

[0112] refer to Fig. 9 and 10 , and combined with reference Figures 1 to 7 , performing a deposition process for forming a target film layer to form a second target film layer, the deposition process for forming the second target film layer includes: executing step S40, that is, repeating step S30. It should be noted that the difference between the sub-deposition process for forming the second target film layer and the sub-deposition process for forming the first target film layer is that the precursor B in step S3′ is replaced by precursor C.

[0113] It can be understood that, during the execution of step S40, after the first purge treatment, the precursor supply line 210 of another first air inlet line 200 corresponding to the second target film layer is opened, that is, the third precursor supply line 210 is opened, that is, the normally closed line between the first air inlet end 241 and the first air outlet end 243 corresponding to the third precursor supply line 210 is opened, and the corresponding precursor C is introduced into the process chamber through the gas mixing structure 100; and the remaining three lines of the first purge gas supply line 220 and the second purge gas supply line 250 are kept open. After the corresponding precursor C is introduced into the process chamber using the third precursor supply pipeline 210, the first purge gas supply pipeline 220 corresponding to the current precursor supply pipeline 210, that is, the third first purge gas supply pipeline 220, is used to perform a second purge treatment, and the remaining three first purge gas supply pipelines 220 and the second purge gas supply pipeline 250 are kept open.

[0114] refer to Fig. 9 and 10 , and combined with reference Figures 1 to 7 , performing a deposition process for forming a target film layer to form a third target film layer, the deposition process for forming the third target film layer includes: executing step S50, that is, repeating step S30. It should be noted that the difference between the sub-deposition process for forming the third target film layer and the sub-deposition process for forming the first target film layer is that the precursor B in step S3′ is replaced by precursor D.

[0115] It can be understood that, during the execution of step S40, after the first purge treatment, the precursor supply line 210 of another first air inlet line 200 corresponding to the third target film layer is opened, that is, the fourth precursor supply line 210 is opened, that is, the normally closed line between the first air inlet end 241 and the first air outlet end 243 corresponding to the fourth precursor supply line 210 is opened, and the corresponding precursor D is introduced into the process chamber through the gas mixing structure 100; and the first purge gas supply line 220 and the second purge gas supply line 250 of the other three lines are kept open. After the corresponding precursor D is introduced into the process chamber using the fourth precursor supply pipeline 210, the first purge gas supply pipeline 220 corresponding to the current precursor supply pipeline 210, i.e., the fourth first purge gas supply pipeline 220, is used to perform a second purge treatment, and the remaining three first purge gas supply pipelines 220 and the second purge gas supply pipeline 250 are kept open.

[0116] refer to Fig. 9 and 10 , and combined with reference Figures 1 to 7, executing step S60: after all target film layers are formed, the deposition process is completed, that is, the precursor reaction is ended.

[0117] It can be understood that the first target film layer is formed by the reaction of precursor A and precursor B, the second target film layer is formed by the reaction of precursor A and precursor C, and the third target film layer is formed by the reaction of precursor A and precursor D.

[0118] In this embodiment, the deposition process includes one sub-deposition process as an example. In other embodiments, the first target layer may be formed by multiple sub-deposition processes, or the second target layer may be formed by multiple sub-deposition processes, or the third target layer may be formed by multiple sub-deposition processes.

[0119] In another specific embodiment, the atomic layer deposition method is used to form a single target film layer, and the specific steps of the atomic layer deposition method are as follows:

[0120] refer to Fig.11 and 12 , and combined with reference Figures 1 to 7 , executing step S10″: pre-processing the wafer.

[0121] refer to Fig.11 and 12 , and combined with reference Figures 1 to 7 , executing step S20″: after the pretreatment is completed, opening the four first purge gas supply pipelines 220 and the one second purge gas supply pipeline 250 to introduce the purge gas into the process chamber through the gas inlet device 10.

[0122] refer to Fig.11 and 12 , and combined with reference Figures 1 to 7 , performing a deposition process for forming a target film layer to form a target film layer, wherein the deposition process for forming the target film layer includes executing a sub-deposition process step S30″.

[0123] It should be noted that the sub-deposition process step S30″ includes:

[0124] Execute step S1″: open the first precursor supply pipeline 210, and open the normally closed pipeline between the first gas inlet end 241 and the first gas outlet end 243 corresponding to the first precursor supply pipeline 210, and introduce the corresponding precursor A into the process chamber through the gas mixing structure 100, and keep the other three first purge gas supply pipelines 220 and the second purge gas supply pipelines 250 open, and introduce purge gas into the process chamber through the gas mixing structure 100.

[0125] Execute step S2″: after the corresponding precursor A is introduced into the process chamber, a first purge gas supply line 220 is used to perform a first purge treatment, and the remaining three first purge gas supply lines 220 and the second purge gas supply line 250 are kept open.

[0126] Execute step S3″: after the first purge treatment, open the second precursor supply pipeline 210, and open the normally closed pipeline between the first gas inlet end 241 and the first gas outlet end 243 corresponding to the second precursor supply pipeline 210, and introduce the corresponding precursor B into the process chamber through the gas mixing structure 100; and keep the other three first purge gas supply pipelines 220 and the second purge gas supply pipelines 250 open.

[0127] Execute step S4″: after the corresponding precursor B is introduced into the process chamber through the second precursor supply line 210, a second purge treatment is performed through the second first purge gas supply line 220, and the remaining three first purge gas supply lines 220 and the second purge gas supply line 250 are kept open.

[0128] After the sub-deposition process S30 ″ is completed, the process returns to step S1 ″ and the sub-deposition process S30 ″ is repeated.

[0129] refer to Fig.11 and 12 , and combined with reference Figures 1 to 7 , executing step S60″: after the target film layer is formed, the deposition process is completed, that is, the precursor reaction is completed.

[0130] It should be noted that, in this embodiment, the deposition process includes two sub-deposition processes. In other embodiments, the first target may be formed by one or more sub-deposition processes, where multiple sub-deposition processes refer to three, four, five, etc. sub-deposition processes.

[0131] It should also be noted that for the specific description of the various components in the air intake device, please refer to the detailed description of the aforementioned embodiment, which will not be repeated in this embodiment.

[0132] Although the present invention is disclosed as above, the present invention is not limited thereto. Any person skilled in the art can make various changes and modifications without departing from the spirit and scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the scope defined by the claims.

Claims

1. A gas mixing structure of an atomic layer deposition device, characterized in that: Used to be connected to the outlet end of the first air inlet pipeline of the atomic layer deposition device, and also used to be connected to the process chamber of the atomic layer deposition device, the gas mixing structure includes: A plurality of air intake layers are stacked, wherein the air intake layers include a first air intake layer and a second air intake layer located at the bottom of the first air intake layer; A first main air inlet pipeline, penetrating the air inlet layer and used for connecting with the process chamber; Among them, the first air intake layer includes an upper air intake pipeline, and the upper air intake pipeline is connected to the first air intake pipeline in a one-to-one correspondence; the second air intake layer includes a lower air intake pipeline, and the lower air intake pipeline is connected to the first main air intake pipeline and the corresponding upper air intake pipeline located on the same layer; the connected upper air intake pipeline and lower air intake pipeline are respectively located in adjacent air intake layers and constitute a second air intake pipeline.

2. The gas mixing structure according to claim 1, characterized in that: The air intake layer further comprises: one or more interlayer air intake layers, located between the first air intake layer and the second air intake layer, the interlayer air intake layer comprising an upper air intake pipeline and a lower air intake pipeline, the lower air intake pipeline in the interlayer air intake layer being connected to the upper air intake pipeline in the upper air intake layer; The lower air intake pipeline in the second air intake layer is connected to the upper air intake pipeline in the upper interlayer air intake layer.

3. The gas mixing structure according to claim 1, characterized in that: In the same second air intake pipeline, the upper-level air intake pipeline includes a first sub-air intake pipeline and a second sub-air intake pipeline, the first sub-air intake pipeline is connected to the corresponding air outlet end of the first air intake pipeline, and the second sub-air intake pipeline is connected to the corresponding lower-level air intake pipeline; wherein the cross-sectional shape of the second sub-air intake pipeline is a closed ring; or, the number of second sub-air intake pipelines of the same upper-level air intake pipeline is multiple, and they are connected to the lower-level air intake pipeline one by one.

4. The gas mixing structure according to any one of claims 1 to 3, characterized in that: There are multiple upper air intake pipelines located at the same air intake layer.

5. The gas mixing structure according to any one of claims 1 to 3, characterized in that: The gas mixing structure further includes: a sealing structure, located at the interface of two adjacent air intake layers, the sealing structure includes multiple ring-shaped sealing members, the area surrounded by the innermost ring-shaped sealing member is used as the central area, the area between two adjacent ring-shaped sealing members is used as the annular area, the first main air intake pipeline is located in the central area, and the air outlet end of the upper air intake pipeline is located in the annular area; Wherein, when there are multiple upper air intake pipelines in the same air intake layer, the air outlet ends of the upper air intake pipelines of different second air intake pipelines are respectively located in different annular areas.

6. The gas mixing structure according to claim 5, characterized in that: The annular seal comprises an annular sealing groove and a sealing medium located in the annular sealing groove.

7. The gas mixing structure according to claim 5, characterized in that: In the same second air intake pipeline, there are multiple lower-layer air intake pipelines, and the air intake ends of the multiple lower-layer air intake pipelines are evenly arranged along the circumferential direction in the annular area.

8. The gas mixing structure according to any one of claims 1 to 3, characterized in that: The gas mixing structure further includes: a first buffer layer located at the bottom of the second air intake layer, a second buffer layer located at the bottom of the first buffer layer, and a third buffer layer located at the bottom of the second buffer layer; The first buffer layer includes a mixing pipeline, which is connected to the first main intake pipeline; the second buffer layer includes a first buffer pipeline, and the intake end of the first buffer pipeline is connected to the outlet end of the mixing pipeline; the second buffer layer and the third buffer layer include a second buffer pipeline, and the intake end of the second buffer pipeline is connected to the outlet end of the first buffer pipeline; wherein, either the first buffer pipeline or the second buffer pipeline is a clockwise pipeline, and the other is a counterclockwise pipeline.

9. The gas mixing structure according to claim 1, characterized in that: The cross-sectional shape of the air intake layer includes a regular polygon.

10. An air intake device for an atomic layer deposition device, characterized in that: include: The gas mixing structure according to any one of claims 1 to 9, used for mixing a precursor and a purge gas, wherein the number of the second gas inlet pipelines is multiple; A plurality of first air inlet pipelines are connected to the second air inlet pipelines in a one-to-one correspondence, wherein the first air inlet pipelines include a precursor supply pipeline and a first purge gas supply pipeline, the precursor supply pipeline and the first purge gas supply pipeline are connected in parallel to the gas mixing structure, the gas outlet end of the precursor supply pipeline is used to provide the precursor to the gas mixing structure, and the gas outlet end of the first purge gas supply pipeline is used to provide the purge gas to the gas mixing structure.

11. The air intake device according to claim 10, characterized in that: The air intake device also includes: a heating component, which includes one or both of a first heating component and a second heating component, the first heating component runs through the gas mixing structure, and the second heating component is located at the connection position between the precursor supply pipeline corresponding to at least one first air intake pipeline and the first purge gas supply pipeline.

12. The air intake device according to claim 11, characterized in that: The air intake device further comprises: A temperature sensor, located at a side of the heating component, and used to detect the working temperature of the heating component through its probe; The isolating switch is connected in series in the circuit where the heating component is located. The isolating switch is used to disconnect the circuit where the heating component is located when the operating temperature of the heating component is greater than a preset value, so as to play a role of over-temperature protection.

13. The air intake device according to any one of claims 10 to 12, characterized in that: The number of the first air intake pipelines is greater than or equal to three.

14. An atomic layer deposition method, characterized in that: The atomic layer deposition method is performed using the gas inlet device according to claim 13, and the atomic layer deposition method comprises: A plurality of deposition processes for forming different target film layers are performed; any one of the deposition processes includes one or more sub-deposition processes, wherein the steps of the sub-deposition processes include: Using the precursor supply pipeline of the first air inlet pipeline corresponding to the target film layer, a corresponding type of precursor is introduced into the process chamber through the gas mixing structure; After a corresponding type of precursor is introduced into the process chamber, a first purge process is performed using a first purge gas supply pipeline corresponding to the current precursor supply pipeline; After the first purge treatment, a precursor supply pipeline of another first air inlet pipeline corresponding to the target film layer is used to introduce a corresponding type of precursor into the process chamber through the gas mixing structure; After a precursor supply pipeline of another first gas inlet pipeline is used to introduce a corresponding type of precursor into the process chamber, a first purge gas supply pipeline corresponding to the current precursor supply pipeline is used to perform a second purge process; Among the first air intake pipelines corresponding to different deposition processes, at least one first air intake pipeline is different.

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