A method and system for testing the electrical performance of a surface temperature sensor chip

Abstract

The present invention discloses a method and system for testing the electrical performance of a surface temperature sensor chip, belonging to the technical field of electrical performance testing. The present invention tests the sensor chip in temperature change environments at three different speeds of low, medium, and high to obtain corresponding voltage value signals; secondly, these signals are finely segmented according to the time points in the temperature rising stage to form a set of signal slices; then, response characteristic values, stable characteristic values, and transition characteristic values are extracted from these signal slices; further, performance coefficients at different speeds are calculated based on these characteristic values; finally, an enhancement value is calculated through the response characteristic values, the mean value of the performance coefficients is taken and enhanced, and finally an electrical performance evaluation value is obtained. By systematically testing the sensor chip in temperature change environments at different speeds, the present invention significantly improves the accuracy of electrical performance testing.

Description

Technical Field

[0001] The present invention relates to the technical field of electrical performance testing, and particularly relates to a method and system for testing the electrical performance of a surface temperature sensor chip. Background Art

[0002] In the fields of modern electronic technology and sensors, surface temperature sensor chips, as key devices for temperature detection, are widely used in multiple fields such as industrial process control, medical equipment, consumer electronics, and aerospace. Traditional methods for evaluating the performance of temperature sensors are usually limited to single tests in static environments and are difficult to comprehensively reflect the actual electrical performance of sensors under different dynamic temperature change conditions. The current testing technologies mainly have the following technical problems: existing evaluation methods often ignore the significant impact of the temperature change rate on the electrical characteristics of sensors, are unable to accurately capture the subtle electrical performance differences of sensors in low-speed, medium-speed, and high-speed temperature change environments, and there is a problem of low accuracy in electrical performance testing. Summary of the Invention

[0003] Aiming at the above deficiencies in the prior art, the method for testing the electrical performance of a surface temperature sensor chip provided by the present invention solves the problem of low accuracy in electrical performance testing existing in the prior art.

[0004] To achieve the above invention objective, the technical solution adopted by the present invention is: A method for testing the electrical performance of a surface temperature sensor chip, comprising the following steps:

[0005] S1. Place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment respectively to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal;

[0006] S2. Cut the low-speed voltage value signal, the medium-speed voltage value signal, and the high-speed voltage value signal respectively according to the time points in the heating stage to construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set;

[0007] S3. Extract response characteristic values, stable characteristic values, and transition characteristic values from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set respectively;

[0008] S4. Calculate a low-speed performance coefficient, a medium-speed performance coefficient, and a high-speed performance coefficient according to the response characteristic values, the stable characteristic values, and the transition characteristic values;

[0009] S5. Calculate an enhancement value according to the response characteristic values, and enhance the mean values of the low-speed performance coefficient, the medium-speed performance coefficient, and the high-speed performance coefficient to obtain an electrical performance evaluation value.

[0010] Further, the low-speed temperature change environment in S1 is specifically as follows: Set the starting temperature T 0 , and in the first R 1 of each subsequent temperature increase stage, increase the temperature by 5°C, and in the last R 2 of each temperature increase stage, maintain the temperature after the increase until the target temperature is reached, where R 1 is the temperature increase duration in each temperature increase stage, and R 2 is the temperature maintenance duration in each temperature increase stage;

[0011] The medium-speed temperature change environment is specifically as follows: Set the starting temperature T 0 , and in the first R 1 of each subsequent temperature increase stage, increase the temperature by 10°C, and in the last R 2 of each temperature increase stage, maintain the temperature after the increase until the target temperature is reached;

[0012] The high-speed temperature change environment is specifically as follows: Set the starting temperature T 0 , and in the first R 1 of each subsequent temperature increase stage, increase the temperature by 15°C, and in the last R 2 of each temperature increase stage, maintain the temperature after the increase until the target temperature is reached.

[0013] Further, S2 includes the following sub-steps:

[0014] S21. Respectively in the low-speed temperature change environment, the medium-speed temperature change environment, and the high-speed temperature change environment, mark the time points of each temperature increase stage to obtain a low-speed time point sequence, a medium-speed time point sequence, and a high-speed time point sequence respectively;

[0015] S22. Cut the low-speed voltage value signal according to each time point in the low-speed time point sequence to obtain a plurality of signal slices, arrange the plurality of signal slices in chronological order, and construct a low-speed voltage value signal slice set;

[0016] S23. Cut the medium-speed voltage value signal according to each time point in the medium-speed time point sequence to obtain a plurality of signal slices, arrange the plurality of signal slices in chronological order, and construct a medium-speed voltage value signal slice set;

[0017] S24. Cut the high-speed voltage value signal according to each time point in the high-speed time point sequence to obtain a plurality of signal slices, arrange the plurality of signal slices in chronological order, and construct a high-speed voltage value signal slice set.

[0018] Further, S3 includes the following sub-steps:

[0019] S31. Divide the signal slices into two parts in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set respectively to obtain a response part and a stable part;

[0020] S32. Calculate the response eigenvalue for the response part and the stable eigenvalue for the stable part;

[0021] S33. Take the connection position between the response part and the stable part in a signal slice as the center;

[0022] S34. Take L voltage values in both the left neighborhood and the right neighborhood of the center, where L is a positive integer;

[0023] S35. When the voltage value obtained in S34 is greater than the average voltage of the stable part, the corresponding voltage value is the transition voltage value, and calculate the transition eigenvalue.

[0024] Further, S31 includes the following sub-steps:

[0025] S311. Extract the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set;

[0026] S312. Calculate the voltage change value of each voltage value in the signal slice;

[0027] S313. Segment the signal slice according to the position where the maximum voltage change value is located to obtain a response part and a stable part.

[0028] Further, the formula for calculating the response eigenvalue in S32 is: , where ε n is the nth response eigenvalue, V n,i is the ith voltage value in the response part of the nth signal slice, V n,i-1 is the (i - 1)th voltage value in the response part of the nth signal slice, n and i are positive integers, △τ is the interval time, and N is the number of voltage values in the response part;

[0029] The formula for calculating the transition eigenvalue in S35 is: , where γ n is the nth transition eigenvalue, V n,k is the kth transition voltage value on the nth signal slice, V n,c is the average voltage of the stable part of the nth signal slice, K is the number of transition voltage values, and n and k are positive integers.

[0030] Further, S4 includes the following sub-steps:

[0031] S41. Arrange the response eigenvalue, stability eigenvalue, and transition eigenvalue of the same signal slice in sequence to construct a feature vector;

[0032] S42. Calculate the performance coefficient based on each feature vector corresponding to the low-speed voltage value signal slice set to obtain the low-speed performance coefficient;

[0033] S43. Calculate the performance coefficient based on each feature vector corresponding to the medium-speed voltage value signal slice set to obtain the medium-speed performance coefficient;

[0034] S44. Calculate the performance coefficient based on each feature vector corresponding to the high-speed voltage value signal slice set to obtain the high-speed performance coefficient.

[0035] Furthermore, the formula for calculating the performance coefficient in S42, S43, and S44 is: , where μ is the performance coefficient, | | is the absolute value, r n,j is the j-th element in the n-th feature vector, M is the number of feature vectors, and n and j are positive integers.

[0036] Furthermore, S5 includes the following steps:

[0037] S51. Take the mean of the low-speed performance coefficient, medium-speed performance coefficient, and high-speed performance coefficient to obtain the performance mean value;

[0038] S52. Take the mean of each response eigenvalue corresponding to the low-speed voltage value signal slice set to obtain the low-speed response mean value;

[0039] S53. Take the mean of each response eigenvalue corresponding to the medium-speed voltage value signal slice set to obtain the medium-speed response mean value;

[0040] S54. Take the mean of each response eigenvalue corresponding to the high-speed voltage value signal slice set to obtain the high-speed response mean value;

[0041] S55. Calculate the enhancement value based on the low-speed response mean value, medium-speed response mean value, and high-speed response mean value: , where z is the enhancement value, ε low is the low-speed response mean value, ε mid is the medium-speed response mean value, ε high is the high-speed response mean value;

[0042] S56. Enhance the performance mean value to obtain the electrical performance evaluation value: , where h is the electrical performance evaluation value, μ c is the performance mean value.

[0043] An electrical performance test system for a surface temperature sensor chip includes: a collection unit, a segmentation unit, a feature extraction unit, a performance coefficient calculation unit, and an evaluation unit;

[0044] The acquisition unit is used to place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment respectively, and obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal;

[0045] The slicing unit is used to slice the low-speed voltage value signal, the medium-speed voltage value signal, and the high-speed voltage value signal respectively according to the time points in the temperature rising stage, and construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set;

[0046] The feature extraction unit is used to extract response feature values, stable feature values, and transition feature values from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set respectively;

[0047] The performance coefficient calculation unit is used to calculate the low-speed performance coefficient, the medium-speed performance coefficient, and the high-speed performance coefficient according to the response feature values, the stable feature values, and the transition feature values;

[0048] The evaluation unit is used to calculate the enhancement value according to the response feature value, enhance the mean values of the low-speed performance coefficient, the medium-speed performance coefficient, and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

[0049] In summary, the beneficial effects of the present invention are as follows:

[0050] 1. By testing the sensor chip in low-speed, medium-speed, and high-speed temperature change environments respectively, the present invention can comprehensively and accurately capture the electrical performance characteristics of the sensor under different temperature change rates. By performing detailed slicing and feature value extraction on the voltage value signal, the accuracy and reliability of the electrical performance test are significantly improved.

[0051] 2. Through multi-dimensional analysis of response feature values, stable feature values, and transition feature values, the present invention enables performance evaluation not to be limited to a single static index, but to be able to comprehensively reflect the changes in the electrical characteristics of the sensor in a dynamic temperature change environment.

[0052] 3. By calculating the enhancement value and enhancing the mean value of the performance coefficient, the present invention further improves the accuracy of the electrical performance test. Description of the Drawings

[0053] Figure 1 is a flowchart of an electrical performance test method for a surface temperature sensor chip;

[0054] Figure 2 is a first temperature rising change schematic diagram;

[0055] Figure 3 is a second temperature rising change schematic diagram;

[0056] Figure 4 It is a schematic diagram of the third temperature rise change. Specific implementation manners

[0057] The specific implementation manners of the present invention will be described below to facilitate those skilled in the art of this technology to understand the present invention. However, it should be clear that the present invention is not limited to the scope of the specific implementation manners. For those of ordinary skill in the art of this technology, as long as various changes are within the spirit and scope of the present invention defined and determined by the appended claims, these changes are obvious, and all inventions made using the concept of the present invention are within the scope of protection.

[0058] Example 1, as Figure 1 shown, a method for testing the electrical performance of a surface temperature sensor chip includes the following steps:

[0059] S1. Place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment respectively to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal;

[0060] S2. According to the time points in the temperature rise stage, slice the low-speed voltage value signal, the medium-speed voltage value signal, and the high-speed voltage value signal respectively to construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set;

[0061] S3. Extract the response characteristic value, the stable characteristic value, and the transition characteristic value from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set respectively;

[0062] S4. Calculate the low-speed performance coefficient, the medium-speed performance coefficient, and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value, and the transition characteristic value;

[0063] S5. Calculate the enhancement value according to the response characteristic value, and enhance the average value of the low-speed performance coefficient, the medium-speed performance coefficient, and the high-speed performance coefficient to obtain the electrical performance evaluation value.

[0064] In this embodiment, the surface temperature sensor chip is placed at the central position of the temperature chamber.

[0065] The low-speed voltage value signal, the medium-speed voltage value signal, and the high-speed voltage value signal are voltage signals output by the surface temperature sensor chip in different environments.

[0066] In this embodiment, the low-speed temperature change environment in S1 is specifically: set the starting temperature T 0 , and raise the temperature by 5°C in the first R 1 time of each subsequent temperature rise stage, and in the last R 2Maintain the temperature after heating until the target temperature is reached, where R 1 is the heating duration in each heating stage, and R 2 is the temperature holding duration in each heating stage;

[0067] The medium-speed temperature change environment is specifically as follows: Set the starting temperature T 0 , and heat up by 10°C in the first R 1 time of each subsequent heating stage, and maintain the temperature after heating in the last R 2 time of each heating stage until the target temperature is reached;

[0068] The high-speed temperature change environment is specifically as follows: Set the starting temperature T 0 , and heat up by 15°C in the first R 1 time of each subsequent heating stage, and maintain the temperature after heating in the last R 2 time of each heating stage until the target temperature is reached.

[0069] Specifically: The low-speed temperature change environment sets the starting temperature at 70°C, heats up by 5°C in the first 30 seconds of each subsequent minute, and maintains the temperature after heating in the last 30 seconds of each minute until 100°C is reached, as Figure 2 shown;

[0070] The medium-speed temperature change environment sets the starting temperature at 70°C, heats up by 10°C in the first 30 seconds of each subsequent minute, and maintains the temperature after heating in the last 30 seconds of each minute until 100°C is reached, as Figure 3 shown;

[0071] The high-speed temperature change environment sets the starting temperature at 70°C, heats up by 15°C in the first 30 seconds of each subsequent minute, and maintains the temperature after heating in the last 30 seconds of each minute until 100°C is reached, as Figure 4 shown.

[0072] In this embodiment, S2 includes the following sub-steps:

[0073] S21. Mark the time points of each heating stage in the low-speed temperature change environment, medium-speed temperature change environment, and high-speed temperature change environment respectively, and obtain the low-speed time point sequence, medium-speed time point sequence, and high-speed time point sequence respectively;

[0074] S22. Segment the low-speed voltage value signal according to each time point in the low-speed time point sequence to obtain multiple signal slices, arrange the multiple signal slices in chronological order, and construct a low-speed voltage value signal slice set;

[0075] S23. Slice the medium-speed voltage value signals at each time point in the medium-speed time point sequence to obtain multiple signal slices, arrange the multiple signal slices in chronological order, and construct a medium-speed voltage value signal slice set;

[0076] S24. Slice the high-speed voltage value signals at each time point in the high-speed time point sequence to obtain multiple signal slices, arrange the multiple signal slices in chronological order, and construct a high-speed voltage value signal slice set.

[0077] In this embodiment, the length of one heating-up stage is 60 seconds. Therefore, the length of the marked time points is 60 seconds, and the voltage value signals corresponding to the time length of one heating-up stage are sliced into one signal slice, which is convenient for analyzing the response and stability of the signal slices corresponding to each heating-up stage.

[0078] In this embodiment, S3 includes the following sub-steps:

[0079] S31. Divide the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set into two parts respectively to obtain a response part and a stable part;

[0080] S32. Calculate the response characteristic values for the response part and calculate the stable characteristic values for the stable part;

[0081] S33. Take the connection position between the response part and the stable part in one signal slice as the center;

[0082] S34. Take L voltage values in both the left neighborhood and the right neighborhood of the center, where L is a positive integer;

[0083] S35. When the voltage values obtained in S34 are greater than the voltage mean value of the stable part, the corresponding voltage values are transition voltage values, and calculate the transition characteristic values.

[0084] In the present invention, since the signal slice corresponds to one heating-up stage, and the heating-up stage includes the ambient temperature rising for 30 seconds and being stable for 30 seconds, therefore, one signal slice is divided into two parts: a response part and a stable part, to test the performance of the surface temperature sensor chip following the temperature change.

[0085] In this embodiment, S31 includes the following sub-steps:

[0086] S311. Extract the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set;

[0087] S312. Calculate the voltage change value of each voltage value in the signal slice;

[0088] S313. Segment the signal slices according to the position where the maximum voltage change value is located to obtain the response part and the stable part.

[0089] The formula for calculating the voltage change value in S312 is: , where θ i is the voltage change value of the i-th voltage value, V i is the i-th voltage value, V i-1 is the (i - 1)-th voltage value, V i+1 is the (i + 1)-th voltage value, i is a positive integer, and △τ is the interval time.

[0090] The present invention finds the turning points of the response part and the stable part through the voltage change value, and divides the response part and the stable part. In this embodiment, the response part and the stable part can also be divided by calculating the curvature of each voltage value in the signal slice and finding the position where the maximum curvature is located.

[0091] In this embodiment, the formula for calculating the response eigenvalue in S32 is: , where ε n is the n-th response eigenvalue, V n,i is the i-th voltage value in the response part of the n-th signal slice, V n,i-1 is the (i - 1)-th voltage value in the response part of the n-th signal slice, n and i are positive integers, △τ is the interval time, and N is the number of voltage values in the response part.

[0092] The present invention calculates the average voltage change speed in the response part, which reflects the following ability of the temperature sensor to temperature changes.

[0093] The formula for calculating the stable eigenvalue in S32 is: , where s n is the n-th stable eigenvalue, V n,m is the m-th voltage value in the stable part of the n-th signal slice, V n,c is the voltage mean value of the stable part of the n-th signal slice, | | is the absolute value operation, and B is the number of voltage values in the stable part.

[0094] In the present invention, the stable eigenvalue reflects the voltage stability of the stable part of the signal slice.

[0095] The formula for calculating the transition eigenvalue in S35 is: , where γ n is the n-th transition eigenvalue, V n,k is the k-th transition voltage value on the n-th signal slice, V n,c is the voltage mean value of the stable part of the n-th signal slice, K is the number of transition voltage values, and n and k are positive integers.

[0096] In the present invention, transition voltage values greater than the average voltage are screened out, which reflects the connection between the response part and the stable part. The larger the transition voltage value and the greater the number of transition voltage values, the worse the performance of the temperature sensor during transition, and there is a large overshoot phenomenon.

[0097] In this embodiment, S4 includes the following sub-steps:

[0098] S41. Arrange the response eigenvalue, stable eigenvalue, and transition eigenvalue of the same signal slice in sequence to construct a feature vector;

[0099] S42. Calculate the performance coefficient according to each feature vector corresponding to the set of low-speed voltage value signal slices to obtain the low-speed performance coefficient;

[0100] S43. Calculate the performance coefficient according to each feature vector corresponding to the set of medium-speed voltage value signal slices to obtain the medium-speed performance coefficient;

[0101] S44. Calculate the performance coefficient according to each feature vector corresponding to the set of high-speed voltage value signal slices to obtain the high-speed performance coefficient.

[0102] In this embodiment, the formula for calculating the performance coefficient in S42, S43, and S44 is: , where μ is the performance coefficient, | | is the absolute value, r n,j is the j-th element in the n-th feature vector, M is the number of feature vectors, and n and j are positive integers.

[0103] The present invention calculates the difference between the elements in each feature vector and the mean value of the elements, which reflects the change of each eigenvalue in each of the low-speed temperature change environment, medium-speed temperature change environment, and high-speed temperature change environment, and judges the fluctuation of the performance as the temperature rises. When the performance of the temperature sensor is stable, each eigenvalue will remain stable in each temperature rising stage.

[0104] In this embodiment, S5 includes the following steps:

[0105] S51. Take the mean value of the low-speed performance coefficient, medium-speed performance coefficient, and high-speed performance coefficient to obtain the performance mean value;

[0106] S52. Take the mean value of each response eigenvalue corresponding to the set of low-speed voltage value signal slices to obtain the low-speed response mean value;

[0107] S53. Take the mean value of each response eigenvalue corresponding to the set of medium-speed voltage value signal slices to obtain the medium-speed response mean value;

[0108] S54. Take the mean value of each response eigenvalue corresponding to the set of high-speed voltage value signal slices to obtain the high-speed response mean value;

[0109] S55. Calculate the enhancement value based on the low-speed response mean, medium-speed response mean, and high-speed response mean: , where z is the enhancement value, and ε low is the low-speed response mean, and ε mid is the medium-speed response mean, and ε high is the high-speed response mean;

[0110] S56. Enhance the performance mean to obtain the electrical performance evaluation value: , where h is the electrical performance evaluation value, and μ c is the performance mean.

[0111] In the present invention, the enhancement value is calculated based on the low-speed response mean, medium-speed response mean, and high-speed response mean. When the heating rate of the temperature sensor increases with the change rate of the ambient temperature, the higher the electrical performance evaluation value.

[0112] Embodiment 2. An electrical performance test system for a surface temperature sensor chip, comprising: an acquisition unit, a segmentation unit, a feature extraction unit, a performance coefficient calculation unit, and an evaluation unit;

[0113] The acquisition unit is configured to place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal;

[0114] The segmentation unit is configured to segment the low-speed voltage value signal, the medium-speed voltage value signal, and the high-speed voltage value signal respectively according to the time points of the heating stage, to construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set;

[0115] The feature extraction unit is configured to extract response feature values, stable feature values, and transition feature values from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set, and the high-speed voltage value signal slice set respectively;

[0116] The performance coefficient calculation unit is configured to calculate a low-speed performance coefficient, a medium-speed performance coefficient, and a high-speed performance coefficient according to the response feature values, stable feature values, and transition feature values;

[0117] The evaluation unit is configured to calculate the enhancement value according to the response feature values, and enhance the mean of the low-speed performance coefficient, the medium-speed performance coefficient, and the high-speed performance coefficient to obtain the electrical performance evaluation value.

[0118] The specific implementation process of Embodiment 2 is the same as that of Embodiment 1.

[0119] By testing the sensor chip separately in low-speed, medium-speed, and high-speed temperature change environments, the present invention can comprehensively and accurately capture the electrical performance characteristics of the sensor under different temperature change rates. By performing detailed slicing and eigenvalue extraction on the voltage value signal, the accuracy and reliability of the electrical performance test are significantly improved.

[0120] Through the multi-dimensional analysis of response eigenvalues, stable eigenvalues, and transition eigenvalues, the performance evaluation of the present invention is no longer limited to a single static index, but can comprehensively reflect the changes in the electrical characteristics of the sensor in a dynamic temperature change environment.

[0121] The present invention further improves the accuracy of the electrical performance test by calculating the enhancement value and enhancing the mean value of the performance coefficient.

[0122] The above are only the preferred embodiments of the present invention and are not used to limit the present invention. For those skilled in the art, the present invention can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for testing the electrical performance of a surface temperature sensor chip, characterized in that: The following steps are involved: S1, placing the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; S2. According to the time point of the heating stage, the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal are respectively segmented to construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; S3, extracting response eigenvalues, stable eigenvalues ​​and transition eigenvalues ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; S4. Calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; S5. Calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value; The S3 comprises the following sub-steps: S31, dividing the signal slices into two parts in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set, respectively, to obtain a response part and a stable part; S32, calculating the response characteristic value for the response part, and calculating the stable characteristic value for the stable part; S33, taking the connection position of the response part and the stable part in a signal slice as the center; S34, taking L voltage values ​​in the left and right neighborhoods of the center, where L is a positive integer; S35, when the voltage value obtained in S34 is greater than the voltage average value of the stable part, the corresponding voltage value is a transition voltage value, and a transition characteristic value is calculated; The S31 comprises the following sub-steps: S311, extracting signal slices from a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set, and a high-speed voltage value signal slice set; S312, calculating a voltage change value of each voltage value in the signal slice; S313, segmenting the signal slice according to the position where the maximum voltage change value is located to obtain a response part and a stable part; The formula for calculating the response characteristic value in S32 is: , where ε n is the nth response eigenvalue, V n,i is the ith voltage value in the response portion of the nth signal slice, V n,i-1 is the i-1th voltage value in the response part of the nth signal slice, n and i are positive integers, △τ is the interval time, and N is the number of voltage values ​​in the response part; The formula for calculating the transition characteristic value in S35 is: , where γ n is the nth transition characteristic value, V n,k is the kth transition voltage value on the nth signal slice, V n,c is the voltage mean of the stable part of the nth signal slice, K is the number of transition voltage values, n and k are positive integers; The S4 comprises the following sub-steps: S41, arranging the response eigenvalue, stable eigenvalue and transition eigenvalue of the same signal slice in sequence to construct a eigenvector; S42, calculating the performance coefficient according to each characteristic vector corresponding to the low-speed voltage value signal slice set to obtain a low-speed performance coefficient; S43, calculating the performance coefficient according to each characteristic vector corresponding to the medium-speed voltage value signal slice set to obtain the medium-speed performance coefficient; S44, calculating the performance coefficient according to each characteristic vector corresponding to the high-speed voltage value signal slice set to obtain a high-speed performance coefficient; The formula for calculating the performance coefficient in S42, S43 and S44 is: , where μ is the performance coefficient, | | is the absolute value, and r n,j is the jth element in the nth eigenvector, M is the number of eigenvectors, n and j are positive integers; The S5 comprises the following steps: S51, taking the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient to obtain a performance average; S52, taking the average of each response characteristic value corresponding to the low-speed voltage value signal slice set to obtain a low-speed response mean; S53, taking the average of each response characteristic value corresponding to the medium-speed voltage value signal slice set to obtain a medium-speed response mean; S54, taking an average of each response characteristic value corresponding to the high-speed voltage value signal slice set to obtain a high-speed response average; S55. Calculate the enhancement value according to the low-speed response mean, the medium-speed response mean, and the high-speed response mean: , where z is the enhancement value, ε low is the mean value of the slow response, ε mid is the mean value of medium-speed response, ε high is the high-speed response mean; S56. Enhance the performance mean value to obtain the electrical performance evaluation value: , where h is the electrical performance evaluation value, μ c is the mean performance value.

2. The electrical performance testing method of a surface temperature sensor chip according to claim 1, characterized in that: The specific example of the low-speed temperature change environment in S1 is: set the starting temperature T0, increase the temperature by 5°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature for the last R2 time of each heating stage until the target temperature is reached, where R1 is the heating time in each heating stage, and R2 is the temperature maintenance time in each heating stage; The medium-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 10°C in the first R1 time of each subsequent heating stage, and maintain the increased temperature in the last R2 time of each heating stage until the target temperature is reached; The high-speed temperature change environment is as follows: set the starting temperature T0, increase the temperature by 15°C in the first R1 time of each subsequent heating stage, and maintain the heated temperature in the last R2 time of each heating stage until the target temperature is reached.

3. The electrical performance testing method of a surface temperature sensor chip according to claim 2, characterized in that: The S2 comprises the following sub-steps: S21, marking the time point of each heating stage in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed time point sequence, a medium-speed time point sequence, and a high-speed time point sequence; S22, dividing the low-speed voltage value signal at each time point in the low-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a set of low-speed voltage value signal slices; S23, dividing the medium-speed voltage value signal at each time point in the medium-speed time point sequence to obtain multiple signal slices, arranging the multiple signal slices in chronological order, and constructing a medium-speed voltage value signal slice set; S24, dividing the high-speed voltage value signal at each time point in the high-speed time point sequence to obtain a plurality of signal slices, arranging the plurality of signal slices in chronological order, and constructing a high-speed voltage value signal slice set.

4. A surface temperature sensor chip electrical performance test system, implemented based on the surface temperature sensor chip electrical performance test method according to any one of claims 1 to 3, characterized in that: include: Acquisition unit, segmentation unit, feature extraction unit, performance coefficient calculation unit and evaluation unit; The acquisition unit is used to place the surface temperature sensor chip in a low-speed temperature change environment, a medium-speed temperature change environment, and a high-speed temperature change environment, respectively, to obtain a low-speed voltage value signal, a medium-speed voltage value signal, and a high-speed voltage value signal; The segmentation unit is used to segment the low-speed voltage value signal, the medium-speed voltage value signal and the high-speed voltage value signal according to the time point of the heating stage, and construct a low-speed voltage value signal slice set, a medium-speed voltage value signal slice set and a high-speed voltage value signal slice set; The feature extraction unit is used to extract response feature values, stable feature values ​​and transition feature values ​​from the signal slices in the low-speed voltage value signal slice set, the medium-speed voltage value signal slice set and the high-speed voltage value signal slice set respectively; The performance coefficient calculation unit is used to calculate the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient according to the response characteristic value, the stable characteristic value and the transition characteristic value; The evaluation unit is used to calculate the enhancement value according to the response characteristic value, enhance the average of the low-speed performance coefficient, the medium-speed performance coefficient and the high-speed performance coefficient, and obtain the electrical performance evaluation value.

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