Light-emitting device, preparation method of light-emitting device and electronic equipment

Abstract

The invention discloses a light-emitting device, a preparation method of the light-emitting device and electronic equipment, and the light-emitting device comprises an anode and a cathode which are oppositely arranged, a light-emitting layer arranged between the anode and the cathode, an electronic function layer arranged between the cathode and the light-emitting layer, and an auxiliary layer arranged between the electronic function layer and the cathode. The material of the auxiliary layer comprises an inorganic ferroelectric compound, can improve the light emitting uniformity of the light emitting device, and is beneficial for improving the photoelectric property of the light emitting device and prolonging the service life of the device. The preparation method of the light-emitting device has the advantages that the preparation process is simple, process conditions are easy to control, and large-scale industrial production requirements are met, the light-emitting device or the light-emitting device prepared by the preparation method of the light-emitting device is applied to electronic equipment, the display effect of the electronic equipment is improved, and the service life of the electronic equipment is prolonged.

Description

Technical Field

[0001] The present application relates to the field of optoelectronic technology, and in particular to a light-emitting device, a method for preparing a light-emitting device, and an electronic device. Background Art

[0002] A light-emitting device refers to a type of device that emits light through the injection and recombination of carriers, including but not limited to organic light-emitting diodes (OLED) and quantum dot light-emitting diodes (QLED). A light-emitting device has a "sandwich" structure, that is, it includes an anode, a cathode, and a light-emitting layer, wherein the anode and the cathode are arranged opposite to each other, and the light-emitting layer is arranged between the anode and the cathode. The light-emitting principle of a light-emitting device is: electrons are injected from the cathode of the device into the light-emitting area, holes are injected from the anode of the device into the light-emitting area, and electrons and holes recombine in the light-emitting area to form excitons, and the recombined excitons release photons in the form of radiation transition, thereby emitting light.

[0003] After years of development, light-emitting devices have made great progress in performance indicators and have shown great potential for application development. However, there are still some shortcomings, such as the performance of light-emitting devices needs to be further improved. Therefore, how to further improve the performance of light-emitting devices is of great significance to the application and development of light-emitting devices. Summary of the invention

[0004] Based on this, the present application provides a light-emitting device, a method for preparing a light-emitting device, and an electronic device.

[0005] In a first aspect, the present application provides a light emitting device, comprising:

[0006] An anode and a cathode arranged opposite to each other;

[0007] A light-emitting layer is disposed between the anode and the cathode;

[0008] an electronic functional layer, disposed between the cathode and the light-emitting layer; and

[0009] An auxiliary layer, disposed between the electronic functional layer and the cathode;

[0010] Wherein, the material of the auxiliary layer includes an inorganic ferroelectric compound.

[0011] Optionally, the material of the auxiliary layer further comprises a polymer, and in the auxiliary layer, the mass ratio of the inorganic ferroelectric compound to the polymer is 1:(1-4); and / or

[0012] The thickness of the auxiliary layer is 10nm to 20nm; and / or

[0013] The inorganic ferroelectric compound is selected from Fe3O4, BaTiO3, Pb(Zr 1-x1 Ti x1 )O3, CaTiO3, PbTiO3, PbZrO3, ZnTiO3, BaZrO3, PbSrTiO3, BiFeO3, LiNbO3, KNbO3, KTaO3, K2HPO4, lithium nickelate, potassium nickelate, (1-x2)[Pb(Mg 1 / 3 Nb 2 / 3 )O3]·x2[PbTiO3]、Pb(Zn 1 / 3 Nb 2 / 3 )O3、Pb(Mg 1 / 3 Nb 2 / 3 )O3、(Na 1 / 2 Bi 1 / 2 )TiO3、(K 1 / 2Bi 1 / 2 )TiO3、(La x3 Pb 1-x3 )(Zr 1-y1 Ti y1 )O3、Pb(Sr x4 Ta 1-x4 )O3、Ba x5 Sr 1-x5 TiO3, CuInP2S6, (C6H 11 NH2)2PbBr4 or more, wherein x1 to x5 are independently 0 to 1, and y1 is 0 to 1.

[0014] Optionally, the polymer is selected from one or more of ferroelectric polymer, polyethylene terephthalate, polyaniline, polymethyl methacrylate, polystyrene, polypropylene and polycarbonate; and / or

[0015] The ferroelectric polymer is selected from one or more of polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), and a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene.

[0016] Optionally, the inorganic ferroelectric compound and the polymer in the auxiliary layer are any of the following:

[0017] (a) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene;

[0018] (b) the inorganic ferroelectric compound is Fe3O4, and the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene;

[0019] (c) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyvinylidene fluoride;

[0020] (d) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is poly(vinylidene fluoride-co-trifluoroethylene);

[0021] (e) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyaniline.

[0022] Optionally, the material of the electronic functional layer includes an undoped first metal oxide and / or a doped second metal oxide;

[0023] The non-doped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn; and / or

[0024] The material of the light-emitting layer includes one or more organic light-emitting materials and quantum dots; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, One or more of DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonding of BN, hybrid localized charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+, Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation; and / or

[0025] The material of the anode and the material of the cathode independently contain one or more of a metal, a carbon material and a third metal oxide; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or

[0026] The light emitting device further comprises a hole functional layer, which is arranged between the anode and the light emitting layer. The material of the hole functional layer comprises a non-doped first inorganic compound, a doped second inorganic compound, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butyl) phenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1- The following are some of the following: N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9, 9'-spirobifluorene; wherein the non-doped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or, the doped second inorganic compound is a main inorganic compound doped with a second doping element, the main inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0027] In a second aspect, the present application provides a method for preparing a light-emitting device, comprising the following steps:

[0028] providing a bottom electrode, and forming a light emitting layer on one side of the bottom electrode; and

[0029] forming a top electrode on a side of the light emitting layer away from the bottom electrode;

[0030] Wherein, when the light-emitting device is of a positive structure, the bottom electrode is an anode and the top electrode is a cathode, after the step of forming a light-emitting layer on one side of the bottom electrode and before the step of forming the top electrode, the preparation method further comprises the steps of: forming an electronic functional layer on a side of the light-emitting layer away from the bottom electrode, then depositing a dispersion containing an inorganic ferroelectric compound on a side of the electronic functional layer away from the light-emitting layer, and then drying the deposited dispersion to obtain an auxiliary layer; the top electrode is formed on a side of the auxiliary layer away from the electronic functional layer;

[0031] Alternatively, when the light-emitting device is an inverted structure, the bottom electrode is a cathode and the top electrode is an anode, and before the step of forming a light-emitting layer on one side of the bottom electrode, the preparation method further includes the steps of: depositing a dispersion containing an inorganic ferroelectric compound on one side of the bottom electrode, then drying the deposited dispersion to obtain an auxiliary layer, and then forming an electronic functional layer on a side of the auxiliary layer away from the bottom electrode; the light-emitting layer is formed on a side of the electronic functional layer away from the auxiliary layer.

[0032] Optionally, in the dispersion, the concentration of the inorganic ferroelectric compound is 10 mg / mL to 50 mg / mL; and / or

[0033] The dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds; optionally, the alkane is selected from one or more of nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, and / or the aromatic hydrocarbon is selected from one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and One or more of 1-methylnaphthalene or indene, and / or the halogenated alkane is selected from one or more of dichloromethane, chloroform and carbon tetrachloride, and / or the alcohol compound is selected from one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, and / or the ether compound is selected from ethylene glycol monomethyl ether, and / or the furan compound is selected from tetrahydrofuran, and / or the pyridine compound is selected from pyridine, and / or the amide compound is selected from N,N-dimethylformamide; and / or

[0034] The thickness of the auxiliary layer is 10nm to 20nm; and / or

[0035] The inorganic ferroelectric compound is selected from Fe3O4, BaTiO3, Pb(Zr 1-x1 Ti x1 )O3, CaTiO3, PbTiO3, PbZrO3, ZnTiO3, BaZrO3, PbSrTiO3, BiFeO3, LiNbO3, KNbO3, KTaO3, K2HPO4, lithium nickelate, potassium nickelate, (1-x2)[Pb(Mg 1 / 3 Nb 2 / 3 )O3]·x2[PbTiO3]、Pb(Zn 1 / 3 Nb 2 / 3 )O3、Pb(Mg 1 / 3 Nb 2 / 3 )O3、(Na 1 / 2 Bi 1 / 2 )TiO3、(K 1 / 2Bi 1 / 2 )TiO3、(La x3 Pb 1-x3 )(Zr 1-y1 Ti y1 )O3、Pb(Sr x4 Ta 1-x4 )O3、Ba x5 Sr 1-x5 TiO3, CuInP2S6, (C6H 11 NH2)2PbBr4, wherein x1 to x5 are independently 0 to 1, and y1 is 0 to 1; and / or

[0036] The bottom electrode is an anode and the top electrode is a cathode, and before the step of forming a light-emitting layer on one side of the bottom electrode, the preparation method further comprises the steps of: forming a hole functional layer on one side of the bottom electrode; the light-emitting layer is formed on the side of the hole functional layer away from the bottom electrode; or, the bottom electrode is a cathode and the top electrode is an anode, and after the step of forming the light-emitting layer on one side of the bottom electrode and before the step of forming the top electrode, the preparation method further comprises the steps of: forming a hole functional layer on the side of the light-emitting layer away from the electron functional layer; the top electrode is formed on the side of the hole functional layer away from the light-emitting layer;The material of the hole functional layer includes a first inorganic compound, a second inorganic compound doped with a second metal element, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinyl carbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4- 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-dioctylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4' ,4'-tri(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobifluorene [9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, wherein the second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and the second metal element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements; and / or;

[0037] The dispersion also includes a polymer. In the dispersion, the mass ratio of the inorganic ferroelectric compound to the polymer is 1:(1-4).

[0038] Optionally, the polymer is selected from one or more of ferroelectric polymer, polyethylene terephthalate, polyaniline, polymethyl methacrylate, polystyrene, polypropylene and polycarbonate; and / or

[0039] The ferroelectric polymer is selected from one or more of polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), and a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene.

[0040] Optionally, the inorganic ferroelectric compound and the polymer in the dispersion are any of the following:

[0041] (a) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene;

[0042] (b) the inorganic ferroelectric compound is Fe3O4, and the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene;

[0043] (c) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyvinylidene fluoride;

[0044] (d) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is poly(vinylidene fluoride-co-trifluoroethylene);

[0045] (e) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyaniline.

[0046] In a third aspect, the present application further provides an electronic device, comprising a light-emitting device as described in any one of the first aspects, or a light-emitting device manufactured by any one of the manufacturing methods described in the second aspect.

[0047] The present application provides a light-emitting device, a method for preparing a light-emitting device, and an electronic device, which have the following technical effects:

[0048] In the light-emitting device, an auxiliary layer is arranged between the electronic functional layer and the cathode, and the material of the auxiliary layer includes an inorganic ferroelectric compound. Since the inorganic ferroelectric compound will undergo polarization under the action of an external electric field, charge distribution will be generated on the surface of the inorganic ferroelectric compound to form polarized charges, so the charge distribution of the light-emitting device can be improved. Based on the good dielectric properties of ferroelectric materials, the concentration of the electric field can be reduced, thereby making the charge distribution more uniform, thereby improving the luminous uniformity of the light-emitting device, and is beneficial to improving the photoelectric performance and device life of the light-emitting device. BRIEF DESCRIPTION OF THE DRAWINGS

[0049] The technical solution and other beneficial effects of the present application will be made apparent by describing in detail the specific implementation methods of the present application in conjunction with the accompanying drawings.

[0050] Figure 1 A schematic diagram of the structure of a light emitting device provided in an embodiment of the present application;

[0051] Figure 2 This is an electroluminescent morphology diagram of the light-emitting device in Example 1 of the present application;

[0052] Figure 3 This is an electroluminescent morphology diagram of the light-emitting device in the comparative example of the present application.

[0053] The reference numerals are as follows:

[0054] 10: light-emitting device, 11: anode, 12: cathode, 13: light-emitting layer, 14: auxiliary layer, 15: electronic functional layer, 16: hole functional layer, 161: hole injection layer, 162: hole transport layer. DETAILED DESCRIPTION

[0055] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0056] Unless otherwise defined, all professional and scientific terms used herein have the same meanings as those familiar to those skilled in the art. In addition, any methods and materials similar or equivalent to those described herein may be applied to the present invention. The preferred implementation methods and materials described herein are for demonstration purposes only and are not intended to limit the content of this application.

[0057] It should be noted that the description order of the following embodiments is not intended to limit the preferred order of the embodiments. The various embodiments of the present application may be presented in the form of a range. It should be understood that the description in the form of a range is only for convenience and simplicity and should not be understood as a rigid limitation on the scope of the present invention; therefore, it should be considered that the range description has specifically disclosed all possible sub-ranges and single values ​​within the range. For example, it should be considered that the range description from 1 to 6 has specifically disclosed sub-ranges, such as from 1 to 3, from 1 to 4, from 1 to 5, from 2 to 4, from 2 to 6, from 3 to 6, etc., as well as single numbers within the range, such as 1, 2, 3, 4, 5 and 6, which apply regardless of the range. In addition, whenever a numerical range is indicated in this article, it is meant to include any cited numbers (fractions or integers) within the indicated range.

[0058] In this application, unless otherwise stated, directional words such as "upper" and "lower" generally refer to the upper and lower parts of the light-emitting device in actual use or working state, specifically the drawing direction in the accompanying drawings; while "inner" and "outer" refer to the outline of the light-emitting device. The terms first, second, third, etc. are used only as labels and do not impose numerical requirements or establish an order.

[0059] In the present application, “layer A is formed on one side of layer B”, “layer A is formed on the side of layer B away from layer C” or similar descriptions can be expressed as layer A is directly formed on one side of layer B or on the side of layer B away from layer C, that is, layer A is in direct contact with layer B, or as layer A is indirectly formed on one side of layer B or on the side of layer B away from layer C, that is, other spacing structure layers can be formed between layer A and layer B. Similarly, “layer A is arranged on one side of layer B”, “layer A is arranged on the side of layer B away from layer C” can be expressed as layer A is in direct contact with layer B, or as other spacing structure layers are arranged between layer A and layer B; “layer A is arranged between layer B and layer C” can be expressed as layer A is in direct contact with layer B and layer A is in direct contact with layer C, or layer A is in direct contact with layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and one or more spacing structure layers are arranged between layer A and layer C, or one or more spacing structure layers are arranged between layer A and layer B and layer A is in direct contact with layer C.

[0060] As used in this application, the term "including" means "including but not limited to".

[0061] As used in this application, the term "and / or" is used to describe the association relationship of associated objects, indicating that there may be three relationships, for example, A and / or B, which may indicate: A exists alone, A and B exist at the same time, and B exists alone. A and B may be singular or plural.

[0062] As used in this application, the term "at least one" refers to one or more, and "multiple" refers to two or more. The term "at least one", "the following at least one" or similar expressions refer to any combination of these items, including any combination of a single or multiple. For example, "at least one of a, b or c" or "at least one of a, b and c" can be expressed as: a, b, c, ab (i.e., a and b), ac, bc or abc, where a, b and c can be single or multiple, respectively.

[0063] As used in this application, the term "ferroelectric compound" refers to a compound that spontaneously polarizes within a certain temperature range and whose polarization direction can be changed by an applied electric field. Ferroelectric compounds may also have one or more properties including piezoelectricity, dielectricity, pyroelectricity and optical effects.

[0064] Existing light-emitting devices have the problem of uneven charge distribution, which leads to poor light uniformity and device life of the light-emitting devices. Based on this, the present application provides a light-emitting device, which can be a positive structure or an inverted structure, such as Figure 1 As shown, the light-emitting device 10 includes an anode 11, a cathode 12, a light-emitting layer 13, an auxiliary layer 14 and an electronic functional layer 15, wherein the anode 11 and the cathode 12 are arranged opposite to each other, the electronic functional layer 15 is arranged between the cathode 12 and the light-emitting layer 13, the auxiliary layer 14 is arranged between the electronic functional layer 15 and the cathode 12, and the material of the auxiliary layer 14 includes an inorganic ferroelectric compound.

[0065] In the light-emitting device 10 of the embodiment of the present application, an auxiliary layer 14 is arranged between the electronic functional layer 15 and the cathode 12. The material of the auxiliary layer 14 includes an inorganic ferroelectric compound. Since the inorganic ferroelectric compound will undergo polarization under the action of an external electric field, charge distribution is generated on the surface of the inorganic ferroelectric compound to form polarized charges, so the charge distribution of the light-emitting device 10 can be improved. Based on the good dielectric properties of ferroelectric materials, the concentration of the electric field can be reduced, so that the charge distribution is more uniform, thereby improving the light emission uniformity of the light-emitting device 10, which is beneficial to improving the photoelectric performance and device life of the light-emitting device 10.

[0066] In some embodiments of the present application, the inorganic ferroelectric compound is selected from Fe3O4, BaTiO3, Pb(Zr 1-x1 Ti x1 )O3, CaTiO3, PbTiO3, PbZrO3, ZnTiO3, BaZrO3, PbSrTiO3, BiFeO3, LiNbO3, KNbO3, KTaO3, K2HPO4, lithium nickelate, potassium nickelate, (1-x2)[Pb(Mg 1 / 3 Nb 2 / 3 )O3]·x2[PbTiO3]、Pb(Zn 1 / 3 Nb 2 / 3 )O3、Pb(Mg 1 / 3 Nb 2 / 3 )O3、(Na 1 / 2 Bi 1 / 2 )TiO3、(K 1 / 2 Bi 1 / 2 )TiO3、(La x3 Pb 1-x3 )(Zr 1-y1 Tiy1 )O3、Pb(Sr x4 Ta 1-x4 )O3、Ba x5 Sr 1- x5 TiO3, CuInP2S6, (C6H 11 NH2)2PbBr4 or more, wherein x1 to x5 are independently 0 to 1, and y1 is 0 to 1.

[0067] In order to improve the light-emitting uniformity of the light-emitting device 10 and reduce the surface roughness of the auxiliary layer 14, in some embodiments of the present application, the material of the auxiliary layer 14 also includes a polymer, and in the auxiliary layer 14, the mass ratio of the inorganic ferroelectric compound to the polymer is 1:(1-4), for example, 1:1, 1:2, 1:3, 1:4 or a ratio between any two of the aforementioned ratios.

[0068] In some embodiments of the present application, the polymer is selected from one or more of ferroelectric polymers, polyethylene terephthalate (CAS No. 25038-59-9), polyaniline (CAS No. 5612-44-2), polymethyl methacrylate (CAS No. 9010-88-2), polystyrene (CAS No. 9003-53-6), polypropylene (CAS No. 9003-07-0) and polycarbonate (CAS No. 25766-59-0). These polymers can effectively form films, have good film-forming properties, have high light transmittance of the films, and can effectively regulate the concentration of ferroelectric materials.

[0069] In some embodiments of the present application, the ferroelectric polymer is selected from one or more of polyvinylidene fluoride (CAS No. 24937-79-9), poly(vinylidene fluoride-co-trifluoroethylene) (CAS No. 28960-88-5), and a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene (CAS No. 9011-17-0). The ferroelectric effect of ferroelectric polymers is weaker than that of inorganic ferroelectric compounds. Combining the two can improve the film quality and effectively improve the charge distribution.

[0070] In order to further improve the light emitting uniformity and device life of the light emitting device 10, in some embodiments of the present application, the inorganic ferroelectric compound and the polymer in the auxiliary layer 14 are any of the following:

[0071] (a) Inorganic ferroelectric compounds are Pb(Zr 0.52 Ti 0.48 )O3, the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene;

[0072] (b) the inorganic ferroelectric compound is Fe3O4, and the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene;

[0073] (c) Inorganic ferroelectric compounds are Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyvinylidene fluoride;

[0074] (d) Inorganic ferroelectric compounds are Pb(Zr 0.52 Ti 0.48 )O3, the polymer is poly(vinylidene fluoride-co-trifluoroethylene);

[0075] (e) Inorganic ferroelectric compounds are Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyaniline.

[0076] In order to further improve the photoelectric performance and device life of the light-emitting device 10, in some embodiments of the present application, the thickness of the auxiliary layer 14 is 10nm to 20nm, for example, 10nm, 12nm, 15nm, 17nm, 20nm or a value between any two of the aforementioned values.

[0077] In the light-emitting device 10 of the application embodiment, the electronic functional layer 15 can be a single-layer structure or a multi-layer structure, and the thickness of the electronic functional layer 15 is, for example, 10nm to 100nm. The electronic functional layer 15, for example, includes one or more of an electron injection layer, an electron transport layer, and a hole blocking layer. For the electronic functional layer 15 including the electron injection layer, the electron transport layer, and the hole blocking layer, the electron transport layer is located between the electron injection layer and the hole blocking layer, and the electron injection layer is closer to the cathode 12 than the hole blocking layer; for the electronic functional layer 15 including the electron injection layer and the electron transport layer, the electron injection layer is closer to the cathode 12 than the electron transport layer; for the electronic functional layer 15 including the electron transport layer and the hole blocking layer, the electron transport layer is closer to the cathode 12 than the hole blocking layer. As an example, the electronic functional layer 15 is a single-layer structure, and the electronic functional layer 15 is an electron transport layer.

[0078] In order to further improve the optoelectronic performance and device life of the light-emitting device 10, in some embodiments of the present application, the material of the electronic functional layer includes an undoped first metal oxide and / or a doped second metal oxide. The undoped first metal oxide is, for example, selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn, and the molar percentage of the first doping element in the doped second metal oxide is, for example, not higher than 5%, not higher than 10%, not higher than 20%, not higher than 30% or not higher than 50%. The doped second metal oxide includes, but is not limited to, one or more of zinc magnesium oxide, zinc calcium oxide, zinc zirconium oxide, zinc gallium oxide, zinc aluminum oxide, zinc lithium oxide, zinc titanium oxide, yttrium zinc oxide, indium tin oxide, and titanium lithium oxide, for example, Zn (1-x) Mg x O, Zn (1-x) Ca x O, Zn (1-x) Zr x O, Zn (1-x) W x O, Zn (1-x) Y x O, Zn (1-x) Ga x O, Zn (1-x) Al x O, Zn (1-x) Li x O、Al (1-x) Zn x O, Zn (1-x) Ti x O, Zn (1-x) Y x O、In (1-x) Sn x O and Ti (1-x) Li x One or more of O, where 0<x≤0.5.

[0079] In some embodiments of the present application, the undoped first metal oxide and / or the doped second metal oxide is a nanomaterial, and the form of the undoped first metal oxide and / or the doped second metal oxide can be nanoparticles, nanorods or nanosheets. When the undoped first metal oxide and / or the doped second metal oxide is nanoparticles, the average particle size is 3nm to 10nm.

[0080] It can be understood that when the electronic functional layer 15 includes multiple materials and has a multi-layer structure, the multiple materials may all be in the same layer, or respectively in different layers, or partially in the same layer.

[0081] In the light-emitting device 10 of the application embodiment, the light-emitting layer 13 can be a single-layer structure or a multi-layer structure, and the thickness of the light-emitting layer 13 is, for example, 10nm to 100nm. In some embodiments of the present application, the material of the light-emitting layer 13 includes one or more of organic light-emitting materials and quantum dots. The light-emitting peak range of the light-emitting material in the light-emitting layer 13 is, for example, 466nm to 472nm.

[0082] Among them, the organic light-emitting materials include but are not limited to 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing BN covalent bonds, hybrid localized charge transfer excited state materials, exciplex light-emitting materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives.

[0083] The quantum dots include, but are not limited to, one or more of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots include, but are not limited to, one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots, and organic-inorganic hybrid perovskite quantum dots. The average particle size of the quantum dots can be 2nm to 20nm, for example, 2nm, 4nm, 6nm, 8nm, 10nm, 12nm, 15nm, 20nm, or a value between any two of the foregoing values.

[0084] For single-component quantum dots and core-shell structure quantum dots, the material of the single-component quantum dots, the material of the core of the core-shell structure quantum dots or the material of the shell of the core-shell structure quantum dots is, but is not limited to, at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, Zn One or more of CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, Al As, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, I nPAs, InPSb, GaAlNP, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNA s, InAlNSb, InAlPAs and InAlPSb, the IV-VI group compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the I-III-VI group compound is selected from one or more of CuInS, CuInSe and AgInS. It should be noted that for the material of the aforementioned single-component quantum dots, or the material of the core of the core-shell structure quantum dots, or the material of the shell of the core-shell structure quantum dots, the chemical formula provided only indicates the elemental composition, and does not indicate the content of each element. For example: CdZnSe only indicates that it is composed of three elements: Cd, Zn and Se. If the content of each element is indicated, it corresponds to Cd x Zn 1-x Se,0 <x<1。

[0085] For inorganic perovskite quantum dots, the general structural formula of inorganic perovskite quantum dots is AMX3, where A is Cs + , M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0086] For organic perovskite quantum dots, the general structural formula of organic perovskite quantum dots is CMX3, wherein C is a carboxamidine group, and M is a divalent metal cation, and M includes but is not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0087] For organic-inorganic hybrid perovskite quantum dots, the general structural formula of organic-inorganic hybrid perovskite quantum dots is BMX3, wherein B is selected from organic amine cations, and the organic amine cations include but are not limited to CH3(CH2) n-2 NH 3+ (n≥2) or NH3(CH2) n NH3 2+ (n≥2), M is a divalent metal cation, including but not limited to Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe2+ ,Ge 2+ , Yb 2+ or Eu 2+ , X is a halogen anion, including but not limited to Cl - Br - or I - .

[0088] It should be noted that when the material of the light-emitting layer 13 includes quantum dots, the surface of the quantum dots may also be connected with ligands. The ligands include but are not limited to C1~C 30 Fatty carboxylic acid ligands, C6~C 30 Aromatic carboxylic acid ligands, C1~C 30 Aliphatic thiol ligands, C6~C 30 Thiol aromatic ligands, C1~C 30 Fatty amine ligands, C6~C 30 Aromatic amine ligands, C1~C 30 Aliphatic phosphine ligands, C6~C 30 Aromatic phosphine ligands and C6~C 30 One or more of aromatic phosphate ligands and halogen ligands.

[0089] Among them, the fatty carboxylic acid ligands include but are not limited to one or more of octanoic acid, nonanoic acid, decanoic acid, undecanoic acid, dodecanoic acid, tetradecanoic acid, hexadecanoic acid, octadecanoic acid, eicosanoic acid, tetracosanoic acid, hexacosanoic acid, oleic acid, linoleic acid, arachidic acid, arachidonic acid, erucic acid and docosahexaenoic acid; the aromatic carboxylic acid ligands include but are not limited to one or more of benzoic acid, dibenzoic acid and 1-naphthoic acid. The fatty thiol ligands include, but are not limited to, one or more of hexyl mercaptan, octyl mercaptan, nonyl mercaptan, decanyl mercaptan, undecanyl mercaptan, dodecanyl mercaptan, hexadecanyl mercaptan and octadecyl mercaptan. The thiol aromatic ligands include, but are not limited to, one or more of benzene mercaptan, triphenylmethyl mercaptan and p-terphenyl-4,4"-dithiol. The fatty amine ligands include, but are not limited to, one or more of hexylamine, octylamine, dioctylamine, trioctylamine, nonylamine, decylamine, dodecylamine, tridecylamine, tetradecylamine, pentadecylamine, hexadecylamine, heptadecanylamine, octadecylamine and oleylamine. The aromatic amine ligands include, but are not limited to, aniline, indenepropylamine, 4-octylaniline and and one or more of benzidine. Aliphatic phosphine ligands include but are not limited to one or more of trimethylphosphine, triethylphosphine, tripropylphosphine, tributylphosphine, trihexylphosphine, trioctylphosphine, tridecylphosphine, tributylphosphine oxide, trihexylphosphine oxide, trioctylphosphine oxide and tridecylphosphine oxide, aromatic phosphine ligands include but are not limited to one or more of bis(2-diphenylphosphinoethyl)phenylphosphine and triphenylphosphine oxide, aromatic phosphate ligands include but are not limited to one or more of tetraethyl p-xylene diphosphate and diphenylethyl phosphate. Halogen ligands include but are not limited to -Cl, -F, -I or -Br.

[0090] In order to further improve the photoelectric performance and device life of the light-emitting device 10, in some embodiments of the present application, the material of the anode 11 and the material of the cathode 12 are independently selected from one or more of metals, carbon materials and third metal oxides. Among them, the metal includes but is not limited to one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg; the carbon material includes but is not limited to one or more of graphite, carbon nanotubes, graphene and carbon fiber; the second metal oxide can be doped or undoped, and the doped second metal oxide includes but is not limited to one or more of indium tin oxide (ITO), fluorine-doped tin oxide (FTO), antimony tin oxide (ATO), aluminum-doped zinc oxide (AZO), gallium-doped zinc oxide (GZO), indium-doped zinc oxide (IZO) and magnesium-doped zinc oxide (MZO), and the undoped second metal oxide includes but is not limited to one or more of TiO2, SnO2, ZnO and In2O3.

[0091] It should be noted that the anode 11 or the cathode 12 may also be a composite electrode, which has a structure similar to a "sandwich", wherein the materials of the upper and lower layers are respectively doped or undoped second metal oxides, and the material of the middle layer is a metal, examples of which are one or more of AZO / Ag / AZO, AZO / Al / AZO, ITO / Ag / ITO, ITO / Al / ITO, ZnO / Ag / ZnO, ZnO / Al / ZnO, TiO2 / Ag / TiO2, TiO2 / Al / TiO2, TiO2 / Ag / TiO2, and TiO2 / Al / TiO2. The thicknesses of the anode 11 and the cathode 12 are, for example, independently selected from 20 nm to 300 nm.

[0092] In order to promote the electron-hole transfer balance, thereby further improving the photoelectric performance and device life of the light emitting device 10, in some embodiments of the present application, continue to refer to Figure 1 The light-emitting device 10 further includes a hole functional layer 16 , which is disposed between the light-emitting layer 13 and the anode 11 .

[0093] The hole functional layer 16 may be a single-layer structure or a multi-layer structure. The thickness of the hole functional layer 16 is, for example, 10 nm to 100 nm. The hole functional layer 16 includes, for example, one or more of a hole injection layer, a hole transport layer, and an electron blocking layer. For the hole functional layer 16 including the hole injection layer, the hole transport layer, and the electron blocking layer, the hole transport layer is located between the hole injection layer and the electron blocking layer, and the hole injection layer is closer to the anode 11 than the electron blocking layer; for the hole functional layer 16 including the hole transport layer and the electron blocking layer, the hole transport layer is closer to the anode 11 than the electron blocking layer. As an example, continue to refer to Figure 1 The hole functional layer 16 is composed of a hole injection layer 161 and a hole transport layer 162 which are stacked together. The hole injection layer 161 is closer to the anode 11 than the hole transport layer 162 .

[0094] The material of the hole functional layer 16 is, but is not limited to, a non-doped first inorganic compound, a doped second inorganic compound, poly(3,4-ethylenedioxythiophene):poly(styrene sulfonic acid) (PEDOT:PSS, CAS No. 155090-83-8), copper phthalocyanine (CAS No. 147-14-8), titanium phthalocyanine (CAS No. 26201-32-1), 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone (CAS No. 29261-33-4), 2,3,6,7,10,11-hexacyano-1,4,5,8,9,12-hexaazatriphenylene (CAS No. 105598-27-4), polyaniline (CAS No. 25233-30-1), polypyrrole (CAS No. 30604-81-0), 3-hexyl substituted polythiophene (CAS No. 104934-50-1), poly (9-vinyl carbazole) (abbreviated as PVK, CAS No. 25067-59-8), 4,4'-bis (9-carbazole) biphenyl (abbreviated as CBP, CAS No. 58328-31-7), poly [bis (4-phenyl) (4-butylphenyl) amine], 4,4'-cyclohexyl bis [N,N-bis (4-methylphenyl) aniline] (abbreviated as TAPC, CAS No. 58473-78-2), poly [(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl) diphenylamine)] (abbreviated as TFB, CAS No. 220797-16-0), poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)](CAS No. 223569-31-1), 4,4',4'-tri(N-3-methylphenyl-N-phenylamino)triphenylamine(CAS No. 124729-98-2), 4,4',4"-tri(carbazol-9-yl)triphenylamine(abbreviated as TCTA, CAS No. 139092-78-7), 4,4',4'-tri(2-naphthylphenylamino)triphenylamine(CAS No. 185690-41-9), N,N'-diphenyl-N , N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as NPB, CAS No. 123847-85-8), N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine (abbreviated as TPD, CAS No. 65181-78-4), N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine (CAS No. 209980-53-0), N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine (abbreviated as Spiro-TPD, CAS No. 1033035-83-4), N2,N7-di-1-naphthyl-N2,One or more of N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine (CAS No. 932739-76-9), poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] (PTTA, CAS No. 1333317-99-9) and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene (Spiro-omeTAD, CAS No. 207739-72-8).

[0095] Among them, the non-doped first inorganic compound includes but is not limited to one or more of graphene, C60, nickel oxide (such as NiO), molybdenum oxide (such as MoO3), tungsten oxide (such as WO3), vanadium oxide (such as V2O5), P-type gallium nitride, chromium oxide (such as Cr2O3), copper oxide (such as CuO or Cu2O), copper sulfide (such as CuS), molybdenum sulfide (such as MoS2) and tungsten sulfide (such as WS2); and / or, the doped second inorganic compound is a main inorganic compound doped with a second doping element, the main The inorganic compounds include, but are not limited to, one or more of graphene, C60, nickel oxide (e.g., NiO), molybdenum oxide (e.g., MoO3), tungsten oxide (e.g., WO3), vanadium oxide (e.g., V2O5), P-type gallium nitride, chromium oxide (e.g., Cr2O3), copper oxide (e.g., CuO or Cu2O), copper sulfide (e.g., CuS), molybdenum sulfide (e.g., MoS2) and tungsten sulfide (e.g., WS2), and / or the second doping element includes, but is not limited to, one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

[0096] It is understood that when the hole functional layer 16 includes multiple materials and the hole functional layer 16 is a multi-layer structure, the multiple materials may all be in the same layer, or in different layers, or partially in the same layer. For example, when the first hole functional layer 16 is composed of a stacked hole injection layer and a hole transport layer, the material of the hole functional layer 16 includes PEDOT:PSS and TFB, PEDOT:PSS and TFB are in different layers, the material of the hole injection layer is PEDOT:PSS, and the material of the hole transport layer is TFB.

[0097] The embodiment of the present application further provides a method for preparing a light-emitting device, which can be used to prepare any of the light-emitting devices described above. The method for preparing the light-emitting device comprises the following steps:

[0098] S1. providing a bottom electrode and forming a light-emitting layer on one side of the bottom electrode;

[0099] S2. Form a top electrode on a side of the light-emitting layer away from the bottom electrode.

[0100] Among them, the bottom electrode is the anode and the top electrode is the cathode. Between step S1 and step S2, the method for preparing the light-emitting device also includes the steps of: forming an electronic functional layer on the side of the light-emitting layer away from the bottom electrode, and then depositing a dispersion containing an inorganic ferroelectric compound on the side of the electronic functional layer away from the light-emitting layer, and then drying the deposited dispersion to obtain an auxiliary layer; the top electrode is formed on the side of the auxiliary layer away from the electronic functional layer.

[0101] Alternatively, the bottom electrode is a cathode and the top electrode is an anode, and before the step of forming a light-emitting layer on one side of the bottom electrode, the method for preparing a light-emitting device further includes the steps of: depositing a dispersion containing an inorganic ferroelectric compound on one side of the bottom electrode, then drying the deposited dispersion to obtain an auxiliary layer, and then forming an electronic functional layer on a side of the auxiliary layer away from the bottom electrode; the light-emitting layer is formed on a side of the electronic functional layer away from the auxiliary layer.

[0102] It should be noted that the structural compositions of the anode, cathode, light-emitting layer, electronic functional layer and auxiliary layer are all described in the foregoing text, and the inorganic ferroelectric compounds and polymers are also described in the foregoing text. In addition to the auxiliary layer, the preparation methods of other film layers in the light-emitting device include but are not limited to chemical methods and / or physical methods. Among them, the chemical method includes but is not limited to one or more of chemical vapor deposition, continuous ion layer adsorption and reaction method, anodization method, electrolytic deposition method and coprecipitation method. Physical methods include but are not limited to physical plating method and solution method. Physical plating method includes but is not limited to thermal evaporation coating method, electron beam evaporation coating method, magnetron sputtering method, multi-arc ion plating method, physical vapor deposition method, atomic layer deposition method and pulsed laser deposition method. Solution method includes but is not limited to spin coating method, printing method, doctor blade method, dip pulling method, immersion method, spray coating method, roll coating method, casting method, slit coating method and strip coating method. One or more.

[0103] In the method for preparing the light-emitting device of the embodiment of the present application, the deposition method of the dispersion includes but is not limited to one or more of spin coating, printing, scraping, dip pulling, soaking, spraying, rolling, casting, slit coating and strip coating. The drying treatment includes but is not limited to one or more of natural air drying, heat treatment, vacuum drying, laser annealing, electron beam annealing, atomic annealing and microwave irradiation annealing.

[0104] In some embodiments of the present application, the dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds. Among them, alkanes include but are not limited to nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, aromatic hydrocarbons include but are not limited to diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, halogenated alkanes include but are not limited to one or more of dichloromethane, chloroform and carbon tetrachloride, alcohol compounds include but are not limited to one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, ether compounds include but are not limited to ethylene glycol monomethyl ether, furan compounds include but are not limited to tetrahydrofuran, pyridine compounds include but are not limited to pyridine, and amide compounds include but are not limited to N,N-dimethylformamide. As an example, the dispersant is N,N-dimethylformamide. It is understood that the dispersion may also include one or more auxiliary agents that promote the dispersion or dissolution of the ferroelectric material, the auxiliary agent including but not limited to a surfactant, and an example auxiliary agent is polyvinyl alcohol.

[0105] In order to improve the density of the auxiliary layer and enhance the dispersibility of the inorganic ferroelectric compound in the dispersant, in some embodiments of the present application, the concentration of the inorganic ferroelectric compound is 10 mg / mL to 50 mg / mL, for example, 10 mg / mL, 20 mg / mL, 30 mg / mL, 40 mg / mL, 50 mg / mL or a value between any two of the foregoing values.

[0106] In order to further improve the film-forming quality of the auxiliary layer and further improve the photoelectric performance and device life of the manufactured light-emitting device, in some embodiments of the present application, the dispersion also includes a polymer, and in the dispersion, the mass ratio of the inorganic ferroelectric compound to the polymer is 1:(1-4), for example, 1:1, 1:2, 1:3, 1:4 or a ratio between any two of the foregoing ratios.

[0107] In order to promote the electron-hole transfer balance, thereby further improving the photoelectric performance and device life of the light-emitting device, in some embodiments of the present application, when the light-emitting device is a positive structure, before the step of forming the light-emitting layer on one side of the bottom electrode, the method for preparing the light-emitting device further includes the steps of: forming a hole functional layer on one side of the bottom electrode; the light-emitting layer is formed on the side of the hole functional layer away from the bottom electrode; or, when the light-emitting device is an inverted structure, between step S1 and step S2, the method for preparing the light-emitting device further includes the steps of: forming a hole functional layer on the side of the light-emitting layer away from the bottom electrode; the top electrode is formed on the side of the hole functional layer away from the light-emitting layer. The structural composition of the hole functional layer is described in the full text.

[0108] The embodiment of the present application also provides an electronic device, the electronic device includes any one of the light-emitting devices described above, or the electronic device includes a light-emitting device prepared by any one of the methods for preparing the light-emitting device described above. The electronic device can be, for example, any electronic product with a display function, including but not limited to a smartphone, a tablet personal computer, a mobile phone, a video phone, an e-book reader, a laptop PC, a netbook computer, a workstation, a server, a personal digital assistant, a portable multimedia player, an MP3 player, a mobile medical machine, a camera, a game console, a digital camera, a car navigation system, an electronic billboard, an ATM, a smart bracelet, a smart watch, a virtual reality (VR) device or a wearable device.

[0109] The technical scheme and technical effects of the present application are described in detail below through specific embodiments, comparative examples and experimental examples. The following embodiments are only some embodiments of the present application and do not specifically limit the present application.

[0110] Example 1

[0111] This embodiment provides a light emitting device and a method for preparing the same. The light emitting device is a quantum dot light emitting diode of a positive structure, such as Figure 1 As shown, from bottom to top, the light emitting device 10 includes an anode 11, a hole functional layer 16, a light emitting layer 13, an electronic functional layer 15, an auxiliary layer 14 and a cathode 12 which are stacked in sequence, wherein the hole functional layer 16 is composed of a stacked hole injection layer 161 and a hole transport layer 162, the hole injection layer 161 is closer to the anode 11 than the hole transport layer 162, and the electronic functional layer 15 is a single-layer structure. The light emitting area of ​​the light emitting device is 2 cm long × 2 cm wide.

[0112] The materials and thicknesses of the various layers in the light emitting device 10 are as follows:

[0113] The material of the anode 11 is ITO, and the thickness of the anode 11 is 80 nm;

[0114] The material of the cathode 12 is Ag, and the thickness of the cathode 12 is 100 nm;

[0115] The material of the light-emitting layer 13 is CdZnSe quantum dots, the light-emitting color is blue, the average particle size of the CdZnSe quantum dots is 14 nm, and the thickness of the light-emitting layer 13 is 40 nm;

[0116] The material of the hole injection layer 161 is PEDOT:PSS, and the thickness of the hole injection layer 161 is 25 nm;

[0117] The material of the hole transport layer 162 is TFB, and the thickness of the hole transport layer 162 is 25 nm;

[0118] The material of the electronic functional layer 15 is nano ZnO (average particle size is 8 nm), and the thickness of the electronic functional layer 15 is 30 nm;

[0119] The material of the auxiliary layer 14 includes Pb(Zr 0.52 Ti 0.48 )O3 and 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer (CAS No. 9011-17-0), the auxiliary layer 14 contains Pb(Zr 0.52 Ti 0.48 )O3: The mass ratio of the polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene is 1:1, and the thickness of the auxiliary layer 14 is 10 nm.

[0120] The method for preparing the light emitting device in this embodiment includes the following steps:

[0121] S1.1. Provide a substrate, sputter ITO on one side of the substrate to obtain an ITO layer, wipe the surface of the ITO layer with a cotton swab dipped in a small amount of soapy water to remove impurities visible to the naked eye on the surface, and then ultrasonically clean the substrate including the ITO with deionized water for 15 minutes, ultrasonically clean with acetone for 15 minutes, ultrasonically clean with ethanol for 15 minutes, and ultrasonically clean with isopropanol for 15 minutes, and after drying, perform a UV-ozone surface treatment for 15 minutes to obtain a substrate including an anode;

[0122] S1.2, in an air environment at room temperature and pressure, spin-coating a 2.8% by mass PEDOT:PSS aqueous solution on the side of the anode away from the substrate, and then subjecting the anode to a constant temperature heat treatment at 150°C to solidify the film to obtain a hole injection layer;

[0123] S1.3, in an argon environment at room temperature and pressure, spin-coat a 6.5 mg / mL TFB-chlorobenzene solution on the side of the hole injection layer away from the anode, and then heat-treat at 170°C to solidify the film to obtain a hole transport layer;

[0124] S1.4. In an argon environment at room temperature and pressure, a CdZnSe quantum dot-n-octane solution with a concentration of 30 mg / mL is spin-coated on the side of the hole transport layer away from the hole injection layer, and then subjected to a constant temperature heat treatment at 80°C to solidify the film to obtain a light-emitting layer;

[0125] S1.5. In an argon environment at room temperature and pressure, a 30 mg / mL nano ZnO-ethanol solution is spin-coated on the side of the light-emitting layer away from the hole transport layer, and then subjected to a constant temperature heat treatment at 80°C to solidify the film to obtain an electronic functional layer;

[0126] S1.6, take 50mg of Pb(Zr 0.52 Ti 0.48 )O3 and 50 mg of a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene are mixed and dispersed in 5 mL of N,N-dimethylformamide, and then 2 mL of polyvinyl alcohol is added and dispersed evenly to obtain a dispersion; subsequently, in an argon environment at room temperature and pressure, the dispersion is spin-coated on the side of the electronic functional layer away from the light-emitting layer, and then subjected to a constant temperature heat treatment at 100° C. to solidify into a film, thereby obtaining an auxiliary layer;

[0127] S1.7, place the prefabricated device after step S1.6 in an atmosphere with a pressure of 4×10 -6 In the mbar evaporation chamber, Ag is thermally evaporated on the side of the auxiliary layer away from the electronic functional layer through a mask plate to obtain a cathode, which is then packaged to obtain a light-emitting device.

[0128] Among them, Pb(Zr 0.52 Ti 0.48 )O3 preparation method comprises the following steps:

[0129] S1.11, add 2.2g of titanium tetrachloride and 10mL of zirconium oxychloride aqueous solution (the concentration of zirconium oxychloride is 0.2g / mL) into a three-necked flask, preheat in a water bath at 80°C, add 5mL of lead nitrate aqueous solution (the concentration of lead nitrate is 0.2g / mL) dropwise under vigorous stirring, stir evenly, add ammonia water to adjust the pH to 9, keep warm at 80°C for 60min, then centrifuge at 6000r / min for 10min, and collect the first precipitate;

[0130] S1.12, mixing an ethanol solvent and a pure water solvent in a volume ratio of 1:1 to obtain a mixed solvent, washing the first precipitate 2 to 3 times with the mixed solvent, adding the mixed solvent to the first precipitate, adding a NaF mineralizer, and then dispersing the mixture by magnetic stirring, and then performing a solvothermal reaction in an oven at 80° C. for 1 hour to obtain a reaction product;

[0131] S1.13, the reaction product obtained in step S1.12 was centrifuged at 4000r / min for 20min, the second precipitate was collected, and the second precipitate was washed with deionized water for the first time, washed with 50% acetic acid aqueous solution, washed with deionized water and anhydrous ethanol for the second time, and then filtered to obtain a filter cake, and the obtained filter cake was Pb(Zr 0.52 Ti 0.48 )O3.

[0132] Example 2

[0133] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that: Pb(Zr 0.52 Ti 0.48 )O3: The mass ratio of the polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene is 1:4.

[0134] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that the "50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer" in step S1.6 is replaced by "200 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer".

[0135] Example 3

[0136] This embodiment provides a light-emitting device and a method for manufacturing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the thickness of the auxiliary layer is 20 nm.

[0137] The preparation method of the light emitting device in this embodiment is carried out with reference to that in Embodiment 1.

[0138] Example 4

[0139] The present embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in the present embodiment is different only in that the material of the auxiliary layer includes Fe3O4 and a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene (CAS No. 9011-17-0), and the mass ratio of Fe3O4:1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene in the auxiliary layer is 1:1.

[0140] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: the "50 mg of Pb(Zr 0.52 Ti 0.48)O3" is replaced by "50mg of Fe3O4".

[0141] Example 5

[0142] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes Fe3O4 and polyvinylidene fluoride (CAS No. 24937-79-9), and the mass ratio of Fe3O4 to polyvinylidene fluoride in the auxiliary layer is 1:1.

[0143] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: in step S1.6, "50 mg of Pb(Zr 0.52 Ti 0.48 )O3 and 50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer are mixed and dispersed in 5 mL of N,N-dimethylformamide" is replaced by "Take 50 mg of Fe3O4 and 50 mg of polyvinylidene fluoride and mix and disperse them in 5 mL of N,N-dimethylformamide".

[0144] Example 6

[0145] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes Fe3O4 and poly(vinylidene fluoride-co-trifluoroethylene) (CAS No. 28960-88-5), and the mass ratio of Fe3O4:poly(vinylidene fluoride-co-trifluoroethylene) in the auxiliary layer is 1:1.

[0146] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: in step S1.6, "50 mg of Pb(Zr 0.52 Ti 0.48 )O3 and 50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer are mixed and dispersed in 5 mL of N,N-dimethylformamide" is replaced by "Take 50 mg of Fe3O4 and 50 mg of poly(vinylidene fluoride-co-trifluoroethylene) and mix and disperse them in 5 mL of N,N-dimethylformamide".

[0147] Example 7

[0148] The present embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in the present embodiment is different only in that the material of the auxiliary layer includes BaTiO3 and a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene (CAS No. 9011-17-0), and the mass ratio of BaTiO3:1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene in the auxiliary layer is 1:1.

[0149] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: the "50 mg of Pb(Zr 0.52 Ti 0.48 )O3" is replaced by "50 mg of BaTiO3".

[0150] Example 8

[0151] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes BaTiO3 and polyvinylidene fluoride (CAS No. 24937-79-9), and the mass ratio of BaTiO3:polyvinylidene fluoride in the auxiliary layer is 1:1.

[0152] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: in step S1.6, "50 mg of Pb(Zr 0.52 Ti 0.48 )O3 and 50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer are mixed and dispersed in 5 mL of N,N-dimethylformamide" is replaced by "Take 50 mg of BaTiO3 and 50 mg of polyvinylidene fluoride and mix and disperse them in 5 mL of N,N-dimethylformamide".

[0153] Example 9

[0154] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes BaTiO3 and poly(vinylidene fluoride-co-trifluoroethylene) (CAS No. 28960-88-5), and the mass ratio of BaTiO3:poly(vinylidene fluoride-co-trifluoroethylene) in the auxiliary layer is 1:1.

[0155] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: in step S1.6, "50 mg of Pb(Zr 0.52 Ti 0.48)O3 and 50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer are mixed and dispersed in 5 mL of N,N-dimethylformamide" is replaced by "Take 50 mg of BaTiO3 and 50 mg of poly(vinylidene fluoride-co-trifluoroethylene) and mix and disperse them in 5 mL of N,N-dimethylformamide".

[0156] Example 10

[0157] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes Pb(Zr 0.52 Ti 0.48 )O3 and polyvinylidene fluoride (CAS No. 24937-79-9), Pb(Zr 0.52 Ti 0.48 )The mass ratio of O3: polyvinylidene fluoride is 1:1.

[0158] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: in step S1.6, "50 mg of Pb(Zr 0.52 Ti 0.48 )O3 and 50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer were mixed and dispersed in 5 mL of N,N-dimethylformamide" is replaced by "Take 50 mg of Pb(Zr 0.52 Ti 0.48 )O3 and 50 mg of polyvinylidene fluoride were mixed and dispersed in 5 mL of N,N-dimethylformamide.

[0159] Embodiment 11

[0160] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes Pb(Zr 0.52 Ti 0.48 )O3 and poly(vinylidene fluoride-co-trifluoroethylene) (CAS No. 28960-88-5), Pb(Zr 0.52 Ti 0.48 The mass ratio of )O3:poly(vinylidene fluoride-co-trifluoroethylene) is 1:1.

[0161] Compared with the preparation method of the light-emitting device in Example 1, the preparation method of the light-emitting device in this embodiment is different in that: in step S1.6, "50 mg of Pb(Zr 0.52 Ti 0.48)O3 and 50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer were mixed and dispersed in 5 mL of N,N-dimethylformamide" is replaced by "Take 50 mg of Pb(Zr 0.52 Ti 0.48 )O3 and 50 mg of poly(vinylidene fluoride-co-trifluoroethylene) were mixed and dispersed in 5 mL of N,N-dimethylformamide.

[0162] Example 12

[0163] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer is Pb(Zr 0.52 Ti 0.48 )O3.

[0164] Compared with the method for preparing the light-emitting device in Example 1, the difference of the method for preparing the light-emitting device in this embodiment is that step S1.6 is replaced by "taking 100 mg of Pb(Zr 0.52 Ti 0.48 )O3 is dispersed in 5 mL of N,N-dimethylformamide, and then 2 mL of polyvinyl alcohol is added and dispersed evenly to obtain a dispersion; subsequently, in an argon environment at room temperature and pressure, the dispersion is spin-coated on the side of the electronic functional layer away from the light-emitting layer, and then subjected to a constant temperature heat treatment at 100°C to solidify into a film, thereby obtaining an auxiliary layer.

[0165] Embodiment 13

[0166] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer is Fe3O4.

[0167] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: step S1.6 is replaced by "take 100 mg of Fe3O4 and disperse it in 5 mL of N,N-dimethylformamide, and then add 2 mL of polyvinyl alcohol, disperse it evenly to obtain a dispersion; then, in an argon environment at room temperature and pressure, spin coat the dispersion on the side of the electronic functional layer away from the light-emitting layer, and then place it at 100°C for constant temperature heat treatment to solidify it into a film to obtain an auxiliary layer".

[0168] Embodiment 14

[0169] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer is BaTiO3.

[0170] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that: step S1.6 is replaced by "take 100 mg of BaTiO3 and disperse it in 5 mL of N,N-dimethylformamide, and then add 2 mL of polyvinyl alcohol, disperse it evenly to obtain a dispersion; then, in an argon environment at room temperature and pressure, spin coat the dispersion on the side of the electronic functional layer away from the light-emitting layer, and then place it at 100°C for constant temperature heat treatment to solidify into a film to obtain an auxiliary layer".

[0171] Embodiment 15

[0172] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes Pb(Zr 0.52 Ti 0.48 )O3 and polyaniline, Pb(Zr 0.52 Ti 0.48 )The mass ratio of O3:polyaniline is 1:1.

[0173] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that the "50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer" in step S1.6 is replaced by "50 mg of polyaniline".

[0174] Example 16

[0175] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes Pb(Zr 0.52 Ti 0.48 )O3 and polystyrene, Pb(Zr 0.52 Ti 0.48 )The mass ratio of O3:polystyrene is 1:1.

[0176] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that the "50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer" in step S1.6 is replaced by "50 mg of polystyrene".

[0177] Embodiment 17

[0178] This embodiment provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Embodiment 1, the light-emitting device in this embodiment is different only in that the material of the auxiliary layer includes Pb(Zr 0.52 Ti 0.48)O3 and polyethylene terephthalate, Pb(Zr 0.52 Ti 0.48 )The mass ratio of O3:polyethylene terephthalate is 1:1.

[0179] Compared with the preparation method of the light-emitting device in Example 1, the difference of the preparation method of the light-emitting device in this embodiment is that the "50 mg of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene polymer" in step S1.6 is replaced by "50 mg of polyethylene terephthalate".

[0180] Comparative Example

[0181] This comparative example provides a light-emitting device and a method for preparing the same. Compared with the light-emitting device in Example 1, the light-emitting device in this comparative example is different only in that the auxiliary layer is omitted.

[0182] Compared with the method for preparing the light-emitting device in Example 1, the method for preparing the light-emitting device in this comparative example is different only in that step S1.6 is omitted.

[0183] Experimental example

[0184] The performance of the light-emitting devices packaged in Examples 1 to 17 and the comparative examples was tested respectively, and IVL optical property measurement equipment (including Ocean Optics USB2000, LabView controlled QE-PRO spectrometer, Keithley2400, high-precision digital source meter Keithley 6485, optical fiber with an inner diameter of 50 μm, device test probes and fixtures, various types of related connecting wires and data cards, efficiency test cassettes and data acquisition systems) was used to detect and obtain the voltage, current, brightness, luminescence spectrum and other parameters of each light-emitting device, and then calculate the maximum external quantum efficiency, power efficiency and other key parameters, and use life test equipment to test the device life of each light-emitting device. In addition, the electroluminescent morphology of each light-emitting device was observed.

[0185] Monitor each light-emitting device at a constant current density (63.7 mA / cm 2 ) is a curve of brightness variation over time, where each light emitting device reaches its maximum brightness from the initial brightness, and the maximum brightness value (L max ,nit). Each light-emitting device is driven by a constant current of 2mA to obtain the corresponding voltage value (U@2mA,V).

[0186] The current efficiency test method is: intermittently collect the brightness value of the light-emitting device in the range of 0V to 8V, and collect the light-emitting area of ​​0.0314cm 2The initial voltage value of the brightness collection is 3V, and the brightness is collected every 0.2V. The brightness value collected each time is divided by the corresponding current density to obtain the current efficiency of the light-emitting device under the collection conditions, and the maximum current efficiency (CE max ,cd / A).

[0187] The device life test method comprises the following steps: 2 ), a 128-channel QLED lifetime test system was used to analyze the electroluminescent lifetime of each light-emitting device, and the time required for each light-emitting device to decay from the maximum brightness to 95% (T95, h) was recorded. The time required for the brightness of each light-emitting device to decay from 100% to 95% at a brightness of 1000nit was calculated through the attenuation fitting formula (T95@1000nit, h).

[0188] During the performance test, three parallel samples were set for each light emitting device, and the average value of the three parallel samples was taken for each performance test parameter. The performance test results of each light emitting device under 25°C environment are shown in Table 1 below:

[0189] Table 1 Summary of performance test results of packaged light emitting devices in Examples 1 to 17 and Comparative Examples

[0190]

[0191]

[0192] It can be seen from Table 1 that the comprehensive performance of the light-emitting devices in Examples 1 to 17 has significant advantages over the light-emitting devices in the comparative examples, which is specifically manifested in that the photoelectric performance and device life of the light-emitting devices in Examples 1 to 17 are better. Taking Example 1 as an example, the U@2mA of the light-emitting device in Example 1 is 94% of the U@2mA of the light-emitting device in the comparative example, and the T95@1000nit of the light-emitting device in Example 1 is 1.32 times that of the T95@1000nit of the light-emitting device in the comparative example, and the L max is the L of the light emitting device in the comparative example max 1.17 times of that of the light emitting device in Example 1. max It is 1.4 times that of the light emitting device in the comparative example. Figure 2 and Figure 3 It can be seen that the electroluminescent morphology of the light-emitting device in Example 1 is significantly better than that of the light-emitting device in the comparative example. The electroluminescent uniformity of the light-emitting device in Example 1 is good, while the electroluminescent morphology of the light-emitting device in the comparative example has spots and ripples.

[0193] This shows that an auxiliary layer is provided between the electronic functional layer and the cathode, and the material of the auxiliary layer includes a ferroelectric material. Since the ferroelectric material undergoes polarization under the action of an external electric field, a charge distribution is generated on the surface of the ferroelectric material to form a polarized charge, so the charge distribution of the light-emitting device can be improved, and the uniformity of the charge distribution is promoted, thereby improving the uniformity of the light-emitting device, and is beneficial to improving the photoelectric performance and device life of the light-emitting device. In addition, compared with the auxiliary layer material being an inorganic ferroelectric compound, the auxiliary layer material being a combination of an inorganic ferroelectric compound and a polymer can further improve the photoelectric performance and device life of the light-emitting device. The reason may be that adding a polymer to the auxiliary layer can reduce the surface roughness of the auxiliary layer, improve the film quality of the auxiliary layer, and is beneficial to promoting the electron-hole transfer balance.

[0194] The above is a detailed introduction to a light-emitting device, a method for preparing a light-emitting device, and an electronic device provided in the embodiments of the present application. Specific examples are used herein to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the technical solutions and core ideas of the present application; ordinary technicians in this field should understand that they can still modify the technical solutions recorded in the aforementioned embodiments, or replace some of the technical features therein by equivalents; and these modifications or replacements do not make the corresponding technical solutions deviate from the scope of the technical solutions of the embodiments of the present application.

Claims

1. A light emitting device, characterized in that: include: An anode and a cathode arranged opposite to each other; A light-emitting layer is disposed between the anode and the cathode; An electronic functional layer, disposed between the cathode and the light-emitting layer; as well as An auxiliary layer, disposed between the electronic functional layer and the cathode; Wherein, the material of the auxiliary layer includes an inorganic ferroelectric compound.

2. The light emitting device according to claim 1, characterized in that: The material of the auxiliary layer further comprises a polymer, and in the auxiliary layer, the mass ratio of the inorganic ferroelectric compound to the polymer is 1:(1-4); and / or The thickness of the auxiliary layer is 10nm to 20nm; and / or The inorganic ferroelectric compound is selected from Fe3O4, BaTiO3, Pb(Zr 1-x1 Ti x1 )O3, CaTiO3, PbTiO3, PbZrO3, ZnTiO3, BaZrO3, PbSrTiO3, BiFeO3, LiNbO3, KNbO3, KTaO3, K2HPO4, lithium nickelate, potassium nickelate, (1-x2)[Pb(Mg 1 / 3 Nb 2 / 3 )O3]·x2[PbTiO3]、Pb(Zn 1 / 3 Nb 2 / 3 )O3、Pb(Mg 1 / 3 Nb 2 / 3 )O3、(Na 1 / 2 Bi 1 / 2 )TiO3、(K 1 / 2Bi 1 / 2 )TiO3、(La x3 Pb 1-x3 )(Zr 1-y1 Ti y1 )O3、Pb(Sr x4 Ta 1-x4 )O3、Ba x5 Sr 1-x5 TiO3, CuInP2S6, (C6H 11 NH2)2PbBr4 or more, wherein x1 to x5 are independently 0 to 1, and y1 is 0 to 1.

3. The light emitting device according to claim 2, characterized in that: The polymer is selected from one or more of ferroelectric polymers, polyethylene terephthalate, polyaniline, polymethyl methacrylate, polystyrene, polypropylene and polycarbonate; and / or The ferroelectric polymer is selected from one or more of polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), and a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene.

4. The light emitting device according to claim 2, characterized in that: The inorganic ferroelectric compound and the polymer in the auxiliary layer are any of the following: (a) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene; (b) the inorganic ferroelectric compound is Fe3O4, and the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene; (c) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyvinylidene fluoride; (d) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is poly(vinylidene fluoride-co-trifluoroethylene); (e) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyaniline.

5. The light emitting device according to claim 1, characterized in that: The material of the electronic functional layer includes a non-doped first metal oxide and / or a doped second metal oxide; The non-doped first metal oxide is selected from one or more of ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 and ZrO2; and / or, the doped second metal oxide is a main metal oxide doped with a first doping element, the main metal oxide is selected from ZnO, TiO2, SnO2, BaO, Ta2O3, Al2O3 or ZrO2, and the first doping element is selected from one or more of Mg, Ca, Zr, W, Ga, Li, Al, Ti, Y, In and Sn; and / or The material of the light-emitting layer includes one or more organic light-emitting materials and quantum dots; the organic light-emitting material is selected from 4,4'-bis(N-carbazole)-1,1'-biphenyl:tri[2-(p-tolyl)pyridine iridium(III), 4,4',4"-tri(carbazole-9-yl)triphenylamine:tri[2-(p-tolyl)pyridine iridium, diaromatic anthracene derivatives, distilbene aromatic derivatives, pyrene derivatives, fluorene derivatives, TBPe fluorescent materials, TTPX fluorescent materials, TBRb fluorescent materials, One or more of DBP fluorescent materials, delayed fluorescent materials, TTA materials, thermally activated delayed materials, polymers containing covalent bonding of BN, hybrid localized charge transfer excited state materials, exciplex luminescent materials, polyacetylene and its derivatives, polyparaphenylene and its derivatives, polythiophene and its derivatives, polyfluorene and its derivatives; and / or, the quantum dots are selected from one or more of single component quantum dots, core-shell structure quantum dots, inorganic perovskite quantum dots, organic perovskite quantum dots and organic-inorganic hybrid perovskite quantum dots;The material of the single-component quantum dot, the material of the core of the core-shell structure quantum dot and the material of the shell of the core-shell structure quantum dot are independently selected from at least one of a II-VI group compound, a III-V group compound, a IV-VI group compound or a I-III-VI group compound, wherein the II-VI group compound is selected from CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe , HgSTe, CdZnS, CdZnSe, CdZnTe, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe and HgZnSTe, and the III-V group compound is selected from GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb, GaNP, GaNAs, GaNSb, GaPAs, GaPSb, AlNP, AlNAs, AlNSb, AlPAs, AlPSb, InNP, InNAs, InNSb, InPAs, InPSb, GaAlNP, GaAlNAs , GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs and InAlPSb The group IV-VI compound is selected from one or more of SnS, SnSe, SnTe, PbS, PbSe, PbTe, SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe, SnPbSSe, SnPbSeTe and SnPbSTe, and the group I-III-VI compound is selected from one or more of CuInS, CuInSe and AgInS; and / or the general structural formula of the inorganic perovskite quantum dots is AMX3, wherein A is Cs; + , M is a divalent metal cation, M is selected from Pb 2+ Sn 2+ , Cu 2+ 、Ni 2+ 、Cd 2+ Cr 2+ , Mn 2+ 、Co 2+ , Fe 2+ ,Ge 2+ , Yb 2+ and Eu 2+ One or more of, X is a halogen anion; and / or, the general structural formula of the organic perovskite quantum dot is CMX3, C is a carboxamidine group; and / or, the general structural formula of the organic-inorganic hybrid perovskite quantum dot is BMX3, B is an organic amine cation; and / or The material of the anode and the material of the cathode independently contain one or more of a metal, a carbon material and a third metal oxide; wherein the metal is selected from one or more of Al, Ag, Cu, Mo, Au, Ba, Pt, Ca, Ir, Ni and Mg, and / or the carbon material is selected from one or more of graphite, carbon nanotubes, graphene and carbon fibers, and / or the second metal oxide is selected from one or more of indium-doped tin oxide, fluorine-doped tin oxide, antimony-doped tin oxide, aluminum-doped zinc oxide, gallium-doped zinc oxide, indium-doped zinc oxide, magnesium-doped zinc oxide, aluminum-doped magnesium oxide, SnO2, ZnO and In2O3; and / or The light emitting device further comprises a hole functional layer, which is arranged between the anode and the light emitting layer. The material of the hole functional layer comprises a non-doped first inorganic compound, a doped second inorganic compound, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinylcarbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4-butyl) phenyl)amine], 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-di-n-octylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4',4'-tris(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1- The following are some of the following: N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobi[9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9, 9'-spirobifluorene; wherein the non-doped first inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide; and / or, the doped second inorganic compound is a main inorganic compound doped with a second doping element, the main inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and / or the second doping element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements.

6. A method for preparing a light emitting device, characterized in that: The steps include: providing a bottom electrode, and forming a light emitting layer on one side of the bottom electrode; and forming a top electrode on a side of the light emitting layer away from the bottom electrode; Wherein, the bottom electrode is an anode and the top electrode is a cathode, and after the step of forming a light-emitting layer on one side of the bottom electrode and before the step of forming the top electrode, the preparation method further comprises the steps of: forming an electronic functional layer on a side of the light-emitting layer away from the bottom electrode; depositing a dispersion containing an inorganic ferroelectric compound on a side of the electronic functional layer away from the light-emitting layer; drying the deposited dispersion to obtain an auxiliary layer; and forming the top electrode on a side of the auxiliary layer away from the electronic functional layer. Alternatively, the bottom electrode is a cathode and the top electrode is an anode, and before the step of forming a light-emitting layer on one side of the bottom electrode, the preparation method further includes the steps of: depositing a dispersion containing an inorganic ferroelectric compound on one side of the bottom electrode; drying the deposited dispersion to obtain an auxiliary layer; forming an electronic functional layer on a side of the auxiliary layer away from the bottom electrode; and the light-emitting layer is formed on a side of the electronic functional layer away from the auxiliary layer.

7. The preparation method according to claim 6, characterized in that: In the dispersion, the concentration of the inorganic ferroelectric compound is 10 mg / mL to 50 mg / mL; and / or The dispersant of the dispersion is selected from one or more of alkanes, aromatic hydrocarbons, halogenated alkanes, alcohol compounds, ether compounds, furan compounds, pyridine compounds and amide compounds; The alkane is selected from one or more of nonane, decane, dodecane, terpene, butylcyclohexane, n-octane, n-hexane, n-heptane, n-nonane, n-decane, cyclohexane and cyclopentane, and / or the aromatic hydrocarbon is selected from one or more of diethylbenzene, trimethylbenzene, propylbenzene, isopropylbenzene, p-toluene isopropylbenzene, butylbenzene and 1-methylnaphthalene or indene, and / or the halogenated alkane is selected from one or more of dichloromethane, chloroform and carbon tetrachloride, and / or the alcohol compound is selected from one or more of methanol, ethanol, propanol, butanol, ethylene glycol and glycerol, and / or the ether compound is selected from ethylene glycol monomethyl ether, and / or the furan compound is selected from tetrahydrofuran, and / or the pyridine compound is selected from pyridine, and / or the amide compound is selected from N,N-dimethylformamide; and / or The thickness of the auxiliary layer is 10nm to 20nm; and / or The inorganic ferroelectric compound is selected from Fe3O4, BaTiO3, Pb(Zr 1-x1 Ti x1 )O3, CaTiO3, PbTiO3, PbZrO3, ZnTiO3, BaZrO3, PbSrTiO3, BiFeO3, LiNbO3, KNbO3, KTaO3, K2HPO4, lithium nickelate, potassium nickelate, (1-x2)[Pb(Mg 1 / 3 Nb 2 / 3 )O3]·x2[PbTiO3]、Pb(Zn 1 / 3 Nb 2 / 3 )O3、Pb(Mg 1 / 3 Nb 2 / 3 )O3、(Na 1 / 2 Bi 1 / 2 )TiO3、(K 1 / 2Bi 1 / 2 )TiO3、(La x3 Pb 1-x3 )(Zr 1-y1 Ti y1 )O3、Pb(Sr x4 Ta 1-x4 )O3、Ba x5 Sr 1-x5 TiO3, CuInP2S6, (C6H 11 NH2)2PbBr4, wherein x1 to x5 are independently 0 to 1, and y1 is 0 to 1; and / or The bottom electrode is an anode and the top electrode is a cathode, and before the step of forming a light-emitting layer on one side of the bottom electrode, the preparation method further comprises the steps of: forming a hole functional layer on one side of the bottom electrode; the light-emitting layer is formed on the side of the hole functional layer away from the bottom electrode; or, the bottom electrode is a cathode and the top electrode is an anode, and after the step of forming the light-emitting layer on one side of the bottom electrode and before the step of forming the top electrode, the preparation method further comprises the steps of: forming a hole functional layer on the side of the light-emitting layer away from the electron functional layer; the top electrode is formed on the side of the hole functional layer away from the light-emitting layer;The material of the hole functional layer includes a first inorganic compound, a second inorganic compound doped with a second metal element, poly(3,4-ethylenedioxythiophene):poly(styrenesulfonic acid), copper phthalocyanine, titanium phthalocyanine, 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanodimethyl-p-benzoquinone, 2,3,6,7,10,11-hexycyano-1,4,5,8,9,12-hexaazatriphenylene, polypyrrole, polyaniline, 3-hexyl substituted polythiophene, poly(9-vinyl carbazole), 4,4'-bis(9-carbazole)biphenyl, poly[bis(4-phenyl)(4- 4,4'-cyclohexylbis[N,N-bis(4-methylphenyl)aniline], poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(4,4'-(N-(4-sec-butylphenyl)diphenylamine)], poly[(N,N'-(4-n-butylphenyl)-N,N'-diphenyl-1,4-phenylenediamine)-ALT-(9,9-dioctylfluorenyl-2,7-diyl)], 4,4',4'-tris(N-3-methylphenyl-N-phenylamino)triphenylamine, 4,4',4"-tris(carbazol-9-yl)triphenylamine, 4,4' ,4'-tri(2-naphthylphenylamino)triphenylamine, N,N'-diphenyl-N,N'-(1-naphthyl)-1,1'-biphenyl-4,4'-diamine, N,N'-diphenyl-N,N'-di(3-methylphenyl)-1,1'-biphenyl-4,4'-diamine, N,N'-bis[4-(diphenylamino)phenyl]-N,N'-diphenylbenzidine, N,N'-bis(3-methylphenyl)-N,N'-diphenyl-9,9-spirobifluorene-2,7-diamine, N2,N7-di-1-naphthyl-N2,N7-diphenyl-9,9'-spirobifluorene [9H-fluorene]-2,7-diamine, poly[bis(4-phenyl)(2,4,6-trimethylphenyl)amine] and 2,2',7,7'-tetrakis[N,N-di(4-methoxyphenyl)amino]-9,9'-spirobifluorene, wherein the second inorganic compound is selected from one or more of graphene, C60, nickel oxide, molybdenum oxide, tungsten oxide, vanadium oxide, P-type gallium nitride, chromium oxide, copper oxide, copper sulfide, molybdenum sulfide and tungsten sulfide, and the second metal element is selected from one or more of nickel, molybdenum, tungsten, vanadium, chromium, copper and platinum group metal elements; and / or; The dispersion also includes a polymer. In the dispersion, the mass ratio of the inorganic ferroelectric compound to the polymer is 1:(1-4).

8. The preparation method according to claim 7, characterized in that: The polymer is selected from one or more of ferroelectric polymers, polyethylene terephthalate, polyaniline, polymethyl methacrylate, polystyrene, polypropylene and polycarbonate; and / or The ferroelectric polymer is selected from one or more of polyvinylidene fluoride, poly(vinylidene fluoride-co-trifluoroethylene), and a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene.

9. The preparation method according to claim 7 or 8, characterized in that: The inorganic ferroelectric compound and the polymer in the dispersion are any of the following: (a) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene; (b) the inorganic ferroelectric compound is Fe3O4, and the polymer is a polymer of 1,1,2,3,3,3-hexafluoro-1-propylene and 1,1-difluoroethylene; (c) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyvinylidene fluoride; (d) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is poly(vinylidene fluoride-co-trifluoroethylene); (e) The inorganic ferroelectric compound is Pb(Zr 0.52 Ti 0.48 )O3, the polymer is polyaniline.

10. An electronic device, characterized in that: The invention comprises a light-emitting device as claimed in any one of claims 1 to 5, or a light-emitting device manufactured by the manufacturing method as claimed in any one of claims 6 to 9.

Images