Polishing head, final polishing equipment and final polishing method

Abstract

The invention relates to a polishing head, a final polishing apparatus and a final polishing method. In one aspect, there is provided a polishing head for a final polishing apparatus for polishing a front side of a single silicon wafer, the polishing head comprising: a body portion rotatable during a polishing process; the retaining part is arranged below the body part, is in a ring shape and is used for retaining the silicon wafer on the inner side of the retaining part, and the retaining part can enable the silicon wafer to selectively rotate along with the rotation of the body part and rotate independently of the rotation of the body part; and the polishing pad is arranged on the lower surface of the body part, and the polishing surface of the polishing pad faces the back surface of the silicon wafer held by the holding part, so that the polishing pad is used for polishing the back surface. Therefore, the back surface of the silicon wafer subjected to the final polishing process can reach an expected particle level.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor processing technology, and in particular, to a polishing head, a final polishing device and a final polishing method. Background Art

[0002] In semiconductor technology, the particle level on the surface of silicon wafers is one of the important factors affecting the reliability of semiconductor devices. Usually, only the particle level on the front side of silicon wafers is required to be high. However, as product requirements continue to increase, the back side of silicon wafers is also required to reach a certain particle level. Summary of the invention

[0003] This section provides a general summary of the disclosure, and is not a comprehensive disclosure of its full scope or all of its features.

[0004] The object of the present disclosure is to provide a polishing head, a final polishing device and a final polishing method that can enable the back side of a silicon wafer to reach a desired particle level.

[0005] To achieve the above-mentioned object, according to a first aspect of the present disclosure, there is provided a polishing head, which is a final polishing device for polishing the front side of a single silicon wafer, and comprises: A main body capable of rotating during polishing; A holding portion, which is disposed below the main body and is annular, and is used to hold the silicon wafer inside the holding portion, and the holding portion can selectively rotate the silicon wafer along with the rotation of the main body and rotate independently of the rotation of the main body; and The polishing pad is arranged at the lower surface of the main body, and its polishing surface faces the back side of the silicon wafer held by the holding part, so as to polish the back side.

[0006] In some embodiments, the holding portion may include a first rotating portion capable of cooperating with a recess of the silicon wafer and capable of being selectively fixed relative to the body portion and rotating around a central axis of the holding portion.

[0007] In some embodiments, the first rotating portion may include an annular portion and a protrusion, wherein the annular portion is used to restrict the silicon wafer inside thereof, and the protrusion protrudes from the inner side of the annular portion toward the radial inside of the annular portion to cooperate with the notch of the silicon wafer.

[0008] In some embodiments, the polishing head may further include a first drive device and a second drive device, wherein the first drive device is used to drive the main body to rotate, and the second drive device is used to drive the holding part to rotate the silicon wafer independently of the rotation of the main body, and the first drive device and the second drive device operate independently of each other.

[0009] In some embodiments, at least one of the first drive device and the second drive device may control at least one of a speed and a direction of the driven rotation.

[0010] In some embodiments, the polishing pad may allow the polishing liquid to be supplied to the polishing surface through the polishing pad from a side thereof facing the lower surface of the body portion.

[0011] In some embodiments, the polishing pad may include a first layer and a second layer adjacent to each other, the first layer being close to the lower surface of the body portion and capable of storing polishing liquid, and the second layer being capable of allowing the polishing liquid stored in the first layer to pass therethrough to reach the polishing surface.

[0012] In some embodiments, the second layer may be made of porous foamed polyurethane.

[0013] In some embodiments, the main body may be provided with a fluid channel therein, and the fluid channel opens at the lower surface of the main body to transport the polishing liquid to the side of the polishing pad.

[0014] In some embodiments, the lower surface of the main body may be provided with vacuum adsorption holes for adsorbing the silicon wafer.

[0015] In some embodiments, the body portion may include a second rotating portion, the polishing pad is disposed at a lower surface of the second rotating portion, and the second rotating portion can selectively rotate along with the rotation of the body portion and independently of the rotation of the body portion.

[0016] According to another aspect of the present disclosure, there is also provided a final polishing device, comprising: The polishing head according to any of the above embodiments; and A polishing table is used to place a final polishing pad thereon to polish the front side of the silicon wafer held by the polishing head.

[0017] According to yet another aspect of the present disclosure, a final polishing method is provided, which is performed using the final polishing device according to the above embodiment.

[0018] According to the above embodiment, by providing a holding part so that the silicon wafer held by it can selectively rotate with the rotation of the main body part and rotate independently of the rotation of the main body part, and by providing a polishing pad so that its polishing surface faces the back side of the silicon wafer held by the holding part, on the one hand, the main body part can be rotated, and the holding part can be configured to rotate the silicon wafer with the rotation of the main body part, so that the front side of the silicon wafer can be polished, and on the other hand, the holding part can be configured to rotate the silicon wafer independently of the rotation of the main body part, so that the back side of the silicon wafer can be polished. In this way, the back side of the silicon wafer can be polished while maintaining the polishing effect on the front side of the silicon wafer, so that the back side of the silicon wafer after the final polishing process can reach the desired particle level. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The features and advantages of the embodiments of the present disclosure will become more easily understood through the following description with reference to the accompanying drawings. The drawings are not drawn to scale and some features may be enlarged or reduced to show details of specific parts. In the drawings: Figure 1 A schematic diagram of a final polishing device in the related art.

[0020] Figure 2 is a schematic structural diagram of a polishing head according to an embodiment of the present disclosure.

[0021] Figure 3 is a schematic top view of a holding portion according to an embodiment of the present disclosure.

[0022] Figure 4 It is a schematic top view of a holding portion according to another embodiment of the present disclosure.

[0023] Figure 5 is a schematic structural diagram of a polishing head according to another embodiment of the present disclosure.

[0024] Figure 6 FIG. 4 is a schematic structural diagram of a polishing head according to another embodiment of the present disclosure.

[0025] Figure 7 is a schematic structural diagram of a polishing head according to yet another embodiment of the present disclosure.

[0026] Figure 8 is a schematic diagram of a final polishing apparatus according to an embodiment of the present disclosure.

[0027] In the drawings, the same or corresponding technical features, parts or components are represented by the same or corresponding reference numerals. DETAILED DESCRIPTION

[0028] The present disclosure is described in detail below with reference to the accompanying drawings by means of exemplary embodiments. It should be noted that the following detailed description of the present disclosure is only for illustrative purposes and is by no means a limitation of the present disclosure.

[0029] It should be noted that, for the sake of clarity, not all features of a specific implementation are described and illustrated in the specification and drawings. Furthermore, in order to avoid unnecessary details that obscure the technical solution focused on by the present disclosure, only the device structures and parts closely related to the technical solution of the present disclosure are described and illustrated in the specification and drawings, while other details that are not closely related to the technical content of the present disclosure and are known to those skilled in the art are omitted.

[0030] As mentioned before, with the continuous improvement of product requirements, the back side of the silicon wafer is also required to reach a certain particle level. Figure 1 , a final polishing device 1' of the related art is briefly described.

[0031] It should be noted that the final polishing device 1 ′ according to the related art described herein does not necessarily belong to the scope of the prior art.

[0032] like Figure 1 As shown in FIG. 1 , the final polishing device 1 ′ is used to polish the front side of the single silicon wafer 2 , and includes a polishing head 10 ′ and a polishing table 20 ′.

[0033] The polishing head 10' comprises a polishing head body 110', a retaining ring 120' and an adsorption pad 130'. The adsorption pad 130' is connected to the lower surface of the polishing head body 110' to adsorb the silicon wafer 2 to be finally polished by its surface tension. The retaining ring 120' is connected to the lower surface of the adsorption pad 130' to limit the silicon wafer 2 inside thereof. The polishing head body 110' can be rotated (for example, driven by a driving shaft 140' connected thereto) to drive the adsorption pad 130' and the retaining ring 120' to rotate, so that the silicon wafer 2 held by the polishing head 10' can be rotated within the limit range of the retaining ring 120'.

[0034] The polishing table 20 ′ is rotatable, and a final polishing pad 30 ′ may be arranged on the surface of the polishing table 20 ′ so as to perform chemical mechanical polishing on the silicon wafer 2 by a polishing liquid supplied onto the final polishing pad 30 ′.

[0035] During the polishing process, the polishing head 10' will press the front side of the silicon wafer 2 held by it onto the rotating final polishing pad 30' with a certain pressure. Through the relative rotation of the silicon wafer 2 and the final polishing pad 30', the front side of the silicon wafer 2 can fully contact with the polishing liquid on the final polishing pad 30', so as to remove the material on the front side of the silicon wafer 2 through the combined action of chemistry and mechanics, so that the front side of the silicon wafer 2 reaches the desired flatness and particle level.

[0036] It is now noted that there are two main sources of particles on the back of the silicon wafer 2. On the one hand, the particles may be related to the particle level of the silicon wafer 2 itself provided to the final polishing process. In the case where the particle level on the back of the silicon wafer 2 is originally high, since the final polishing process does not polish the back of the silicon wafer 2, but only adsorbs it through the adsorption pad 130' as described above, the particle level on the back of the silicon wafer 2 after the final polishing process cannot meet the requirements. On the other hand, the particles may also be related to the adsorption pad 130'. Since the adsorption pad 130' adsorbs the back of the silicon wafer 2 during the polishing process, the particle level on the back of the silicon wafer 2 after the final polishing process may not meet the requirements due to the adsorption pad 130', such as contaminants on the adsorption pad 130'.

[0037] In this regard, according to an embodiment of the present disclosure, a polishing head 10 is provided, which is used for a final polishing device 1 (see Figure 8 ), through the polishing head 10, the particle level on the back side of the silicon wafer 2 after the final polishing process can reach the desired requirement.

[0038] Below, refer to Figures 2 to 7 , the polishing head 10 is described in detail.

[0039] First, refer to Figure 2 The polishing head 10 includes a body portion 110 , a holding portion 120 and a polishing pad 130 .

[0040] The body part 110 can rotate during the polishing process. For example, the body part 110 can rotate by rotating a driving shaft connected thereto.

[0041] The holding portion 120 is disposed below the body portion 110 and is annular, for holding the silicon wafer 2 inside thereof, and the holding portion 120 can selectively rotate the silicon wafer 2 along with the rotation of the body portion 110 and rotate independently of the rotation of the body portion 110 .

[0042] The retaining portion 120 is configured to allow the silicon wafer 2 to rotate along with the rotation of the main body 110 , or to rotate the silicon wafer 2 independently of the rotation of the main body 110 as selected. That is, at this time, the rotation of the silicon wafer 2 has nothing to do with the main body 110 , but only with the retaining portion 120 .

[0043] The polishing pad 130 is disposed at the lower surface 110 a of the body portion 110 , and its polishing surface 130 a faces the back surface 2 a of the silicon wafer 2 held by the holding portion 120 , so as to polish the back surface 2 a .

[0044] For example, Figure 2 As shown in FIG. 1 , the polishing pad 130 can be connected to the lower surface 110a of the body 110. At this time, the polishing surface 130a of the polishing pad 130 for polishing the silicon wafer 2 can face the back side 2a of the held silicon wafer 2. Thus, the polishing pad 130 can not only provide a certain adsorption effect on the back side 2a of the silicon wafer 2 due to its own surface tension, but also make the silicon wafer 2 not contact the final polishing pad 30 (see FIG. 1 ). Figure 8 ) can still be maintained by the polishing head 10 when in contact, and the back side 2a of the silicon wafer 2 can also be polished by rotating the silicon wafer 2.

[0045] In this case, on one hand, the body part 110 can be rotated, and the holding part 120 can be configured to rotate the silicon wafer 2 with the rotation of the body part 110, thereby, the rotation of the silicon wafer 2 relative to the final polishing pad 30 can be controlled by the rotation of the body part 110, so that the front side 2b of the silicon wafer 2 can be polished when the silicon wafer 2 is in contact with the final polishing pad 30 by the downward pressure of the polishing head 10. On the other hand, the holding part 120 can be configured to rotate the silicon wafer 2 independently of the rotation of the body part 110, thereby, the rotation of the silicon wafer 2 relative to the polishing pad 130 can be controlled by the holding part 120, so that the back side 2a of the silicon wafer 2 can be polished when the silicon wafer 2 is in contact with the polishing pad 130 by the downward pressure of the polishing head 10. In this way, the particle level of the back side of the silicon wafer 2 after the final polishing process can meet the desired requirements.

[0046] It is understandable that when the holding portion 120 is configured to rotate the silicon wafer 2 independently of the rotation of the main body 110, the main body 110 can also be rotated, thereby polishing the front side 2b and the back side 2a of the silicon wafer 2 simultaneously.

[0047] It is conceivable that Figure 2 As shown in FIG. 1 , the holding portion 120 may be disposed at the lower surface 110 a of the body portion 110 , and the polishing pad 130 may be disposed inside the holding portion 120 . However, it is also conceivable that the holding portion 120 may also be disposed below the polishing pad 130 .

[0048] In some embodiments, reference Figures 2 to 4 The holding portion 120 may include a first rotating portion 1201 , which can cooperate with the recess 2 c of the silicon wafer 2 and can be selectively fixed relative to the body portion 110 and rotate around the central axis of the holding portion.

[0049] By making the first rotating part 1201 cooperate with the notch 2c of the silicon wafer 2, the silicon wafer 2 can be rotated together with the rotation of the first rotating part 1201. By making the first rotating part 1201 selectively fixed relative to the body part 110 and rotating around the central axis of the holding part 120, the silicon wafer 2 can be selectively rotated with the rotation of the body part 110 and rotated independently of the rotation of the body part 110. In this way, the front side 2b and the back side 2a of the silicon wafer 2 can be polished.

[0050] It is conceivable that Figure 4 As shown in , the retaining portion 120 may further include a fixing portion 1202 , which is annular and fixed relative to the main body portion 110 , the first rotating portion 1201 is located radially inside the fixing portion 1202 , and the first rotating portion 1201 can be selectively fixed and rotated relative to the fixing portion 1202 .

[0051] By fixing the fixing part 1202 relative to the main body 110 and enabling the first rotating part 1201 to be selectively fixed and rotated relative to the fixing part 1202, the silicon wafer 2 can be selectively rotated along with the rotation of the main body 110 and can be rotated independently of the rotation of the main body 110. Thus, the front side 2b and the back side 2a of the silicon wafer 2 can be polished.

[0052] In some embodiments, Figure 3 and Figure 4 As shown in the figure, the first rotating portion 1201 may include an annular portion 1201a and a protrusion 1201b, the annular portion 1201a is used to limit the silicon wafer 2 on its inner side, and the protrusion 1201b protrudes from the inner side of the annular portion 1201a toward the radial inner side of the annular portion 1201a to cooperate with the recess 2c of the silicon wafer 2.

[0053] However, the first rotating part 1201 is not limited to the above form, and it may also adopt any other suitable form.

[0054] In some embodiments, the polishing head 10 may further include a first drive device and a second drive device (neither shown), the first drive device being used to drive the main body 110 to rotate, the second drive device being used to drive the holding portion 120 to rotate the silicon wafer 2 independently of the rotation of the main body 110, and the first drive device and the second drive device operating independently of each other.

[0055] In this case, it is allowed to drive the main body 110 and the holding part 120 separately to realize the separate control of the polishing of the front side 2b and the back side 2a of the silicon wafer 2. For example, only the first driving device can be started to drive the main body 110 to rotate, so as to polish the front side 2b of the silicon wafer 2 separately. It is also possible to start only the second driving device to rotate the silicon wafer 2 independently of the rotation of the main body 110 through the holding part 120, so as to polish the back side 2a of the silicon wafer 2 separately. In addition, it is also possible to start the first driving device and the second driving device at the same time to polish the front side 2b and the back side 2a of the silicon wafer 2 at the same time. Moreover, it is allowed to make the first driving device and the second driving device output different driving strategies accordingly for different polishing requirements of the front side 2b and the back side 2a.

[0056] In this way, the front side 2b and the back side 2a of the silicon wafer 2 can be polished more flexibly as needed, and a better polishing effect can be obtained for the front side 2b and the back side 2a of the silicon wafer 2. In particular, while maintaining the polishing effect for the front side 2b of the silicon wafer 2, the particle level of the back side 2a of the silicon wafer 2 can be effectively reduced to reach the desired particle level requirement.

[0057] It is contemplated that at least one of the first drive device and the second drive device may control at least one of the speed and direction of the driven rotation.

[0058] That is, the first driving device may control the speed and / or direction of the rotation of the body portion 110 , and / or the second driving device may control the speed and / or direction of the rotation of the silicon wafer 2 independent of the rotation of the body portion 110 .

[0059] In this way, different polishing requirements of the front side 2 b and the back side 2 a of the silicon wafer 2 can be met by adjusting the speed and / or direction of rotation, so that the polishing of the front side 2 b and the back side 2 a can be performed more effectively.

[0060] In some embodiments, the polishing pad 130 may allow the polishing liquid to be supplied to the polishing surface 130 a through the polishing pad 130 from a side thereof facing the lower surface 110 a of the body part 110 .

[0061] like Figure 2 As shown in FIG. 1 , the side of the polishing pad 130 facing the lower surface 110a of the body 110 is the upper side of the polishing pad 130. In this case, by supplying the polishing liquid to the polishing pad 130 from the upper side of the polishing pad 130, the polishing liquid can be distributed on the polishing surface 130a, so that the polishing surface 130a polishes the back side 2a of the silicon wafer 2 with the help of the polishing liquid.

[0062] In this way, the polishing liquid supply process to the polishing surface 130a does not interfere with the polishing process for the back side 2a of the silicon wafer 2. Moreover, the polishing liquid can be more easily retained on the polishing surface 130a, so that the back side 2a of the silicon wafer 2 can be polished more effectively by the polishing liquid.

[0063] In the case where the polishing pad 130 allows the polishing liquid to be supplied to the polishing surface 130a through the polishing pad 130 from the side of the lower surface 110a thereof facing the main body 110, in some embodiments, the polishing pad 130 may include a first layer and a second layer adjacent to each other, the first layer being close to the lower surface 110a of the main body 110 and capable of storing the polishing liquid, and the second layer being capable of allowing the polishing liquid stored in the first layer to pass therethrough to reach the polishing surface 130a.

[0064] In this case, a sufficient amount of polishing liquid for polishing the back side 2a of the silicon wafer 2 can be stored in the first layer, and the polishing liquid will enter the second layer during the polishing process of the back side 2a, and pass through the second layer to reach the polishing surface 130a, so as to polish the back side 2a. In this way, the back side 2a of the silicon wafer 2 can be effectively polished without providing an additional polishing liquid supply structure.

[0065] It is contemplated that the second layer may be made of porous foamed polyurethane.

[0066] In this case, the pores in the foamed polyurethane may serve as flow channels to allow the polishing liquid stored in the first layer to flow therethrough to the polishing surface 130a.

[0067] However, it is conceivable that a plurality of holes may be directly opened in the second layer so that the polishing liquid stored in the first layer can flow smoothly to the polishing surface 130 a through the holes.

[0068] It is also conceivable that the amount and speed of the polishing liquid provided to the polishing surface 130a can be adjusted by setting the density and / or size of these holes or holes to meet the polishing requirements for the back side 2a of the silicon wafer 2.

[0069] In some embodiments, Figure 5 As shown in , the body 110 may be provided with a fluid channel 1101 therein, and the fluid channel 1101 opens at the lower surface 110 a of the body 110 to transport polishing liquid to the side of the polishing pad 130 facing the lower surface 110 a of the body 110 .

[0070] In this case, the polishing liquid supplied from the fluid channel 1101 to the side (i.e., the upper side) of the polishing pad 130 can enter the polishing pad 130 and pass through the polishing pad 130 to be supplied to the polishing surface 130a, so as to polish the back side 2a. In this way, the polishing liquid can be directly supplied by the fluid channel 1101 according to the required amount and speed, thereby making it easier and more convenient to control the amount and speed of the polishing liquid.

[0071] It is conceivable that the fluid channel 1101 may include a plurality of openings distributed corresponding to the one side of the polishing pad 130 so that the polishing liquid provided to the polishing pad 130 from these openings is distributed over the entire range of the one side, thereby making the distribution of the polishing liquid provided to the polishing surface 130a more uniform, thereby improving the polishing effect on the back side 2a.

[0072] In addition, it is understood that the fluid channel 1101 can also be provided while using the polishing pad 130 including the first layer and the second layer. Thus, the polishing liquid provided from the fluid channel 1101 to the polishing pad 130 will first be in the first layer, and then provided from the first layer through the second layer to the polishing surface 130a.

[0073] As mentioned above, the polishing pad 130 can provide a certain adsorption force through its surface tension so as to adsorb the back side 2a of the silicon wafer 2. In addition, in some embodiments, referring to Figure 6 The lower surface 110 a of the main body 110 may be provided with vacuum adsorption holes 1102 a for adsorbing the silicon wafer 2 .

[0074] To clearly show the vacuum adsorption hole 1102a, Figure 6 The polishing pad 130 is omitted. Figure 6 In the embodiment, a vacuum pipe 1102 is provided in the main body 110, and the vacuum pipe 1102 extends to the lower surface 110a of the main body 110, and a vacuum adsorption hole 1102a is provided on the lower surface 110a. The vacuum adsorption holes 1102a may be, for example, a plurality of holes evenly distributed on the lower surface 110a. Through these vacuum adsorption holes 1102a, the back side 2a of the silicon wafer 2 can be more effectively adsorbed through the holes or holes in the polishing pad 130. For example, the adsorption force on the silicon wafer 2 can be adjusted by adjusting the adsorption strength of the vacuum adsorption holes 1102a, so as to meet the adsorption force requirement on the silicon wafer 2 during the polishing process.

[0075] In some embodiments, reference Figure 7 The body part 110 may include a second rotating part 1103 , the polishing pad 130 is disposed at a lower surface of the second rotating part 1103 , and the second rotating part 1103 can selectively rotate along with the rotation of the body part 110 and rotate independently of the rotation of the body part 110 .

[0076] In this case, on one hand, when the body part 110 rotates, the second rotating part 1103 can be configured to rotate with the rotation of the body part 110 to polish the front side 2b of the silicon wafer 2; or, when the holding part 120 is configured to rotate the silicon wafer 2 independently of the rotation of the body part 110, the second rotating part 1103 can still be configured to rotate with the rotation of the body part 110 to polish the back side 2a of the silicon wafer 2. On the other hand, when the holding part 120 is configured to rotate the silicon wafer 2 independently of the rotation of the body part 110, the second rotating part 1103 can be configured to rotate independently of the rotation of the body part 110, thereby allowing the relative rotation of the silicon wafer 2 and the polishing pad 130 to be adjusted to obtain a better polishing effect on the back side 2a of the silicon wafer 2.

[0077] It is conceivable that the polishing head 10 may further include a third driving device for driving the second rotating portion 1103 to rotate, and the third driving device may operate independently of the operations of the first driving device and the second driving device.

[0078] According to another aspect of the present disclosure, referring to Figure 8 , a final polishing device 1 is also provided, which comprises: a polishing head 10; and The polishing table 20 is used to place a final polishing pad 30 thereon to polish the front side 2 b of the silicon wafer 2 held by the polishing head 10 .

[0079] According to yet another aspect of the present disclosure, a final polishing method is provided, which is performed using the final polishing apparatus 1 .

[0080] In the present disclosure, although the present disclosure has been described with reference to exemplary embodiments, it should be understood that the present disclosure is not limited to the specific embodiments described and shown in detail herein. Those skilled in the art may make various changes to the exemplary embodiments without departing from the scope defined by the claims of the present disclosure.

[0081] The features mentioned and / or shown in the above description of the exemplary embodiments of the present disclosure may be combined in the same or similar manner into one or more other embodiments, combined with the features in other embodiments or substituted for the corresponding features in other embodiments. The technical solutions obtained by these combinations or substitutions shall also be deemed to be included in the protection scope of the present disclosure.

Claims

1. A polishing head, a final polishing device for polishing the front side of a single silicon wafer, characterized in that: include: A main body capable of rotating during polishing; A holding portion, which is disposed below the main body and is annular, and is used to hold the silicon wafer inside the holding portion, and the holding portion can selectively rotate the silicon wafer along with the rotation of the main body and rotate independently of the rotation of the main body; as well as A polishing pad is arranged at the lower surface of the main body, and its polishing surface faces the back side of the silicon wafer held by the holding part, so as to polish the back side.

2. The polishing head according to claim 1, characterized in that: The holding portion includes a first rotating portion, which can be matched with the notch of the silicon wafer and can be selectively fixed relative to the body portion and rotated around a central axis of the holding portion.

3. The polishing head according to claim 2, characterized in that: The first rotating portion includes an annular portion and a protruding portion, wherein the annular portion is used to restrict the silicon wafer inside thereof, and the protruding portion protrudes from the inner side of the annular portion toward the radial inner side of the annular portion to cooperate with the notch of the silicon wafer.

4. The polishing head according to any one of claims 1 to 3, characterized in that It also includes a first driving device and a second driving device, wherein the first driving device is used to drive the main body to rotate, and the second driving device is used to drive the holding part to rotate the silicon wafer independently of the rotation of the main body, and the first driving device and the second driving device operate independently of each other.

5. The polishing head according to claim 4, characterized in that: At least one of the first drive device and the second drive device is capable of controlling at least one of a rotation speed and a direction of the driven rotation.

6. The polishing head according to any one of claims 1 to 3, characterized in that The polishing pad allows a polishing liquid to be supplied to the polishing surface through the polishing pad from a side thereof facing the lower surface.

7. The polishing head according to claim 6, characterized in that: The polishing pad includes a first layer and a second layer adjacent to each other, wherein the first layer is close to the lower surface and can store the polishing liquid, and the second layer can allow the polishing liquid stored in the first layer to pass therethrough to reach the polishing surface.

8. The polishing head according to claim 7, characterized in that: The second layer is made of porous foamed polyurethane.

9. The polishing head according to claim 6, characterized in that: The main body is provided with a fluid channel therein, and the fluid channel opens at the lower surface so as to transport the polishing liquid to the side of the polishing pad.

10. The polishing head according to any one of claims 1 to 3, characterized in that The lower surface is provided with vacuum adsorption holes for adsorbing the silicon wafer.

11. The polishing head according to any one of claims 1 to 3, characterized in that The body portion includes a second rotating portion, the polishing pad is disposed at a lower surface of the second rotating portion, and the second rotating portion is selectively rotatable along with the rotation of the body portion and independently of the rotation of the body portion.

12. A final polishing device, characterized in that: include: The polishing head according to any one of claims 1 to 11; as well as A polishing table is used to arrange a final polishing pad thereon to polish the front side of the silicon wafer held by the polishing head.

13. A final polishing method, characterized in that: This is carried out using a final polishing apparatus according to claim 12.

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