Deposition system

Abstract

The invention discloses a deposition system. A deposition system includes an electrode structure, a stage, and a magnetic structure. The electrode structure comprises a back plate and a spraying plate installed on the back plate. The carrying platform and the electrode structure are oppositely arranged at an interval, and the spraying plate is arranged between the carrying platform and the back plate. The carrying platform is used for carrying a substrate. The magnetic structure is mounted on the back plate. The magnetic structures are arranged on the two opposite sides perpendicular to the thickness direction of the backboard respectively. In this way, the uniformity of film coating can be improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a deposition system. Background Art

[0002] In the deposition equipment, an electric field can be generated by mutually parallel electrode plates to ionize the process gas to coat the substrate. In the related art, a shower plate can be used to introduce the process gas into the process chamber. Due to the differences in the diffusion speed and concentration of the gas in the shower plate, as well as due to the transmission of the substrate, the uniformity of the coating on the substrate may not reach the ideal level. Summary of the invention

[0003] The embodiments of the present application provide a deposition system that can improve the uniformity of the coating.

[0004] The embodiment of the present application provides a deposition system. The deposition system includes an electrode structure, a carrier and a magnetic structure. The electrode structure includes a back plate and a spray plate mounted on the back plate. The carrier is opposite to the electrode structure and is arranged at a distance, and the spray plate is arranged between the carrier and the back plate. The carrier is used to carry a substrate. The magnetic structure is mounted on the back plate. The magnetic structure is respectively arranged on two opposite sides perpendicular to the thickness direction of the back plate.

[0005] Optionally, the deposition system has a transmission path, and the magnetic structures are spaced apart on opposite sides of the transmission path.

[0006] Optionally, the magnetic structure includes a first magnet pair and a second magnet pair, the first magnet pair is arranged on one of two opposite sides perpendicular to the thickness direction of the back plate, and the second magnet pair is arranged on the other side of the two opposite sides perpendicular to the thickness direction of the back plate; the structures of the first magnet pair and the second magnet pair are symmetrically arranged with respect to the magnetic pole center, and the first magnet pair and the second magnet pair are used to form a magnetic field to improve the electric field distribution of the electrode structure.

[0007] Optionally, the orthographic projection of the carrier on the back plate is at least partially located outside the first magnet pair and the second magnet pair, and a substrate carrying area is provided on the carrier, and the orthographic projection of the substrate carrying area on the back plate is located between the first magnet pair and the second magnet pair.

[0008] Optionally, the first magnet pair includes a first magnetic component arranged on the side of the back plate away from the spray plate, and a second magnetic component arranged on the side of the back plate close to the spray plate; the two magnetic poles of the first magnetic component are arranged opposite to each other in its extension direction, and the two magnetic poles of the second magnetic component are arranged opposite to each other in its extension direction, and the magnetic poles of the first magnetic component and the second magnetic component are oriented in opposite directions.

[0009] Optionally, the second magnet pair includes a third magnetic component arranged on the side of the back plate away from the spray plate, and a fourth magnetic component arranged on the side of the back plate close to the spray plate; the two magnetic poles of the third magnetic component are arranged opposite to each other in its extension direction, and the two magnetic poles of the fourth magnetic component are arranged opposite to each other in its extension direction, the magnetic poles of the third magnetic component and the fourth magnetic component are oriented in opposite directions, and the magnetic poles of the first magnetic component and the third magnetic component are oriented in opposite directions.

[0010] Optionally, the magnetic structure includes a shell and at least one magnet disposed in the shell and arranged in series, and a cooling space is formed between the magnet and the shell for the cooling matrix to pass through.

[0011] Optionally, a plurality of magnets are included in the same magnetic structure, and the poles of the plurality of magnets are oriented in the same direction and are connected in series.

[0012] Optionally, the spray plate is provided with flow guide structures on at least two opposite sides of a surface close to the carrier.

[0013] Optionally, a plurality of guide structures are disposed around the circumference of the carrier and surround the spray plate, and the guide structures extend along the edges of the spray plate and are connected end to end.

[0014] Optionally, the cross-sectional area of ​​the flow guide structure gradually decreases in the direction approaching the carrier, and the plane of the flow guide structure away from the center of the spray plate is arranged perpendicular to the plane where the spray plate is located.

[0015] The plane of the guide structure close to the center of the spray plate is gradually inclined in the direction from the spray plate toward the carrier and away from the center of the spray plate.

[0016] Optionally, the thickness direction of the back plate is the height direction, and the distance from the edge of the carrier to the guide structure in the height direction is H 1 , the distance from the center of the spray plate to the carrier in the height direction is H 2 , H 1 :H 2 It is 0.5:1~0.9:1.

[0017] Optionally, the thickness direction of the back plate is the height direction, and the distance in the height direction from the edge of the carrier to the end of the guide structure close to the center of the shower plate is H. 3， The height distance from the center of the spray plate to the carrier is H. 2 , H 3 :H 2 It is 0.9:1~1:1.

[0018] Optionally, H 2 The value range is 10~50mm.

[0019] Optionally, the spray plate and the back plate are arranged to form a spray space, the back plate is provided with an air inlet duct connected to the spray space, and part of the magnetic structure is arranged in the spray space.

[0020] Optionally, the deposition system further comprises two heating plates arranged opposite to each other, and the backing plate, the shower plate and the carrier are arranged between the heating plates.

[0021] The beneficial effects of the present application are as follows: Different from the prior art, the electrode structure is connected to the power supply, and the carrier is grounded, thereby generating an electric field between the electrode structure and the carrier, which plays a role in ionizing the process gas. The shower plate can introduce the process gas between the electrode structure and the carrier. By setting a magnetic structure, the electric field distribution between the electrode structure and the carrier can be improved, thereby improving the uniformity of the substrate coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] Figure 1 Schematic diagram of the thickness distribution of thin film deposition in related technology

[0023] Figure 2 is a structural schematic diagram of an embodiment of a deposition system of the present application;

[0024] Figure 3 yes Figure 1 A schematic diagram of an axonometric view of a portion of the structure of the deposition system shown;

[0025] Figure 4 yes Figure 1 Schematic diagram of the effect of the magnetic structure of the deposition system on the electric field;

[0026] Figure 5 yes Figure 1 Schematic diagram of the magnetic structure in the deposition system shown;

[0027] Figure 6 is a structural schematic diagram of another embodiment of the deposition system of the present application;

[0028] Figure 7 yes Figure 6 A magnified schematic diagram of the structure at center A;

[0029] Figure 8 yes Figure 6 A magnified schematic diagram of the structure at B in the middle;

[0030] Fig. 9 yes Figure 6 A bottom-up schematic diagram of the shower plate and guide structure in the deposition system shown.

[0031] Reference numerals:

[0032] Deposition system, 1; electrode structure, 11; back plate, 111; shower plate, 112; carrier, 12; magnetic structure, 13; first magnet pair, 131; first magnetic component, 1311; second magnetic component, 1312; second magnet pair, 132; third magnetic component, 1321; fourth magnetic component, 1322; flow guide structure, 14; air inlet duct, 15; heating plate, 16. DETAILED DESCRIPTION

[0033] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0034] Figure 1 This is a schematic diagram of measuring the film thickness of the substrate after coating in the related art. In the related art, there are many reasons for uneven coating. On the one hand, in the process of introducing gas into the shower plate, the process gas needs to gradually diffuse from the center of the shower plate to the edge of the shower plate. And part of the process gas near the edge will also diffuse to the non-process area where coating is not required. Due to the existence of the above problems, the concentration of the gas introduced by the shower plate in the center is greater than that in the edge, which leads to a thinner thickness at the edge of the substrate. On the other hand, there are multiple chambers in the deposition system, and the chamber wall is provided with an opening and a gate valve is installed. The connection and isolation of different chambers are controlled by the gate valve to enable the substrate to be transmitted between different chambers. The opening set in the chamber wall affects the uniform distribution of the current when the current is transmitted in the chamber wall to a certain extent. The uneven problem caused by the superimposed shower plate will be accumulated on both sides of the transmission path, further leading to a difference in the coating thickness on the transmission path. On the other hand, after the electric field is fed in, the distribution of the electric field at different positions is also uneven, and the difference between the electric field strength at the edge of the substrate and the electric field strength at the center will also lead to uneven coating. In order to improve the above technical problems, the present application can provide the following embodiments.

[0035] Combination Figures 2 to 5, an embodiment of the present application provides a deposition system 1. The deposition system 1 includes an equipment body, an electrode structure 11, a carrier 12 and a magnetic structure 13. A process chamber is provided inside the equipment body, which can accommodate the electrode structure 11, the carrier 12 and the magnetic structure 13. The carrier 12 is opposite to the electrode structure 11 and is arranged at a distance, and the carrier 12 can transfer the substrate into the deposition system 1 by moving. The electrode structure 11 includes a back plate 111 and a spray plate 112 installed on the back plate 111. The spray plate 112 is arranged between the carrier 12 and the back plate 111. The carrier 12 is used to carry the substrate. The electrode structure 11 is connected to a power supply, the carrier 12 is grounded, and an electric field is generated between the electrode structure 11 and the carrier 12, which plays a role in ionizing the process gas. The electrode structure 11 includes a back plate 111 and a spray plate 112 installed on the back plate 111. The back plate 111 can be used as an access point for electrode feeding. The shower plate 112 can introduce the process gas relatively evenly between the electrode structure 11 and the carrier 12. Optionally, the shower plate 112 is provided with an array of gas outlet holes or a gas outlet grid, etc., for dispersing and evenly distributing the gas between the shower plate 112 and the carrier 12.

[0036] In some embodiments, the spray plate 112 and the back plate 111 are arranged to form a spray space, and the back plate 111 is provided with an air inlet pipe 15 connected to the spray space. The air inlet pipe 15 can introduce the process gas into the spray space, and the process gas can diffuse in the spray space and then be sprayed through the spray plate 112.

[0037] In some embodiments, the deposition system 1 further includes two heating plates 16 disposed opposite to each other, and the backing plate 111, the shower plate 112 and the carrier 12 are disposed between the heating plates 16. The heating plate 16 can heat the process chamber to provide a suitable process temperature.

[0038] The electric field formed by the carrier 12 and the electrode structure 11 has a certain uneven distribution in the same direction due to the electrode feed and edge effect. The uneven electric field will lead to different concentrations of ionized process gas, which will lead to uneven coating. Specifically, the electric field strength will gradually decrease near the edge of the carrier 12. In order to improve this technical problem, the present application can provide the following embodiments.

[0039] In some embodiments, the deposition system 1 further includes a magnetic structure 13, which is mounted on the back plate 111. The magnetic structure 13 is disposed on two opposite sides perpendicular to the thickness direction of the back plate 111. The magnetic structure 13 can generate a magnetic field, thereby affecting the electric field distribution between the electrode structure 11 and the carrier 12, thereby improving the uniformity of the substrate coating. Figure 4 , Figure 4In the figure, after adding the magnetic structure 13 on the left and right sides, the electric field lines can be constrained to be more uniform. More orderly electric field lines can pass through the upper and lower sides in the figure, which helps to increase the coating thickness in the upper and lower edge areas. Optionally, the magnetic structure 13 can also be located on the upper and lower sides, thereby increasing the thickness of the coating on the left and right sides.

[0040] The deposition system 1 has a transmission path (for the convenience of description, the transmission path is introduced from left to right in the drawings of this application), and the substrate can be moved on the transmission path by the carrier 12 to enter the deposition chamber. Among them, the carrier 12 can be transferred into or out of the deposition chamber by a guide structure, a roller structure or a conveyor belt structure. Optionally, after the carrier 12 enters the deposition chamber, it can also be lifted to the process position by a lifting mechanism. The carrier 12 can transfer the substrate into the deposition chamber. The carrier 12 has a carrying area for carrying the substrate, and the carrier 12 can be transferred by movement so as to correspond to the electrode structure 11 and the magnetic structure 13. It should be noted that when depositing a thin film, the carrier 12 is in a stationary state. The description of the carrier 12 in the embodiments described later in this application is based on the example that the carrier 12 is stationary during deposition. Since the concentration of the process gas in the edge area of ​​the spray plate 112 is relatively low relative to the central area, combined with the influence of the cavity wall opening on the current flowing in the cavity wall, on both sides of the transmission path (that is, Figure 1 The unevenness of the coating thickness is even worse.

[0041] Therefore, in order to improve the above problems, combined Figure 4 and Figure 5 In some embodiments, the magnetic structures 13 are arranged at intervals on the transmission path (ie Figure 4 on the left and right sides of the image). Figure 4 In the figure, after adding the magnetic structure 13 on the left and right sides, the electric field lines can be constrained to be more uniform. More orderly electric field lines can pass through the upper and lower sides of the figure, which helps to increase the coating thickness in the upper and lower edge areas. In this way, the uneven coating problem along both sides of the transmission path can be improved in a targeted manner.

[0042] In some embodiments, in combination Figure 5 The magnetic structure 13 includes a first magnet pair 131 and a second magnet pair 132. The first magnet pair 131 is disposed on one of two opposite sides perpendicular to the thickness direction of the back plate 111, and the second magnet pair 132 is disposed on the other side perpendicular to the thickness direction of the back plate 111. Optionally, the first magnet pair 131 and the second magnet pair 132 are disposed on opposite sides of the transmission path.

[0043] The structures of the first magnet pair 131 and the second magnet pair 132 are symmetrically arranged about the magnetic pole center. The first magnet pair 131 and the second magnet pair 132 are used to form a magnetic field to improve the electric field distribution of the electrode structure 11 .

[0044] Specifically, combined Figure 5 In some embodiments, the first magnet pair 131 includes a first magnetic component 1311 disposed on the side of the back plate 111 away from the shower plate 112, and a second magnetic component 1312 disposed on the side of the back plate 111 close to the shower plate 112. The two magnetic poles of the first magnetic component 1311 are disposed opposite to each other in the extension direction thereof, and the two magnetic poles of the second magnetic component 1312 are disposed opposite to each other in the extension direction thereof. The magnetic poles of the first magnetic component 1311 and the second magnetic component 1312 are oriented in opposite directions.

[0045] The second magnet pair 132 includes a third magnetic component 1321 disposed on the side of the back plate 111 away from the spray plate 112, and a fourth magnetic component 1322 disposed on the side of the back plate 111 close to the spray plate 112. The two magnetic poles of the third magnetic component 1321 are disposed opposite to each other in the extension direction thereof, and the two magnetic poles of the fourth magnetic component 1322 are disposed opposite to each other in the extension direction thereof. The magnetic poles of the third magnetic component 1321 and the fourth magnetic component 1322 are oriented in opposite directions, and the magnetic poles of the first magnetic component 1311 and the third magnetic component 1321 are oriented in opposite directions.

[0046] In some embodiments, part of the magnetic structure 13 is disposed in the spray space, such as the second magnetic component 1312 and the fourth magnetic component 1322 .

[0047] In some embodiments, when deposition is performed, that is, when the carrier 12 is stationary, the orthographic projection of the carrier 12 on the back plate 111 is at least partially located outside the first magnet pair 131 and the second magnet pair 132, and the edge of the orthographic projection of the carrier 12 on the back plate 111 is the shortest distance from the first magnet pair 131 and the second magnet pair 132 (combined with Figure 2 Medium 2 The distance between the magnetic structure 13 and the edge of the carrier 12 is set appropriately, so that the position of the magnetic structure 13 can match the position where the substrate is placed, so as to optimize the electric field enhancement effect in the edge area.

[0048] In some embodiments, the carrier 12 is provided with a substrate carrying area, and the orthographic projection of the substrate carrying area on the back plate 111 is located between the first magnet pair 131 and the second magnet pair 132, so that the substrate at the edge is located in the edge area of ​​the electric field enhancement formed by the magnetic structure 13. In some embodiments, the magnetic structure 13 includes a shell and a magnet arranged in the shell and connected in series, and a cooling space is formed between the magnet and the shell for the cooling substrate to pass through. Specifically, the first magnetic component 1311, the second magnetic component 1312, the third magnetic component 1321 and the fourth magnetic component 1322 have similar structures except for the direction of the magnetic poles. The magnetic component includes a shell and at least one magnet arranged in the shell, and a cooling space is formed between the magnet and the shell for the cooling substrate to pass through. Cooling down the magnetic component by cooling can prevent the magnet from failing due to excessive temperature during the coating process.

[0049] In some embodiments, a plurality of magnets are included in the same magnetic structure, and the magnetic poles of the plurality of magnets are oriented in the same direction and are connected in series. The plurality of magnets are connected in series to adapt to electrode structures 11 of different sizes.

[0050] Based on the above embodiments, Figures 6 to 9 The shower plate 112 is provided with a guide structure 14 on at least two opposite sides of a side close to the carrier 12. The guide structure 14 can guide the process gas output from the shower plate 112, thereby reducing the loss of the process gas from the edge area and gathering the process gas, so that the concentration of the process gas at the center and edge of the carrier 12 is balanced.

[0051] The guide structure 14 may be provided on both sides of the transmission path, thereby improving the uneven coating problem on both sides of the transmission path in a targeted manner.

[0052] Furthermore, combined with Fig. 9 A plurality of guide structures 14 are arranged around the circumference of the carrier 12 and surround the shower plate 112. The guide structures 14 extend along the edge of the shower plate 112 and are connected end to end. In this way, the process gas at the edges can be gathered, thereby improving the uneven coating problem caused by the low concentration at the edge of the shower plate 112.

[0053] In some embodiments, on the one hand, the magnetic structures 13 are arranged at intervals on the transmission path, combined with Figure 4, after adding the magnetic structure 13 on the left and right sides, the electric field lines can be constrained to be more uniform. More orderly electric field lines can pass through the upper and lower sides in the figure, which helps to increase the coating thickness in the edge areas of the upper and lower sides. Through the above-mentioned method, the unevenness problem on both sides of the transmission path can be targetedly improved. On the other hand, the guide structure 14 is arranged around the circumference of the carrier 12 and surrounds the spray plate 112, and the guide structure 14 extends along the edge of the spray plate 112 and is connected end to end. In this way, the process gases on the edges of the four sides can be gathered, thereby improving the uneven coating problem caused by the low concentration at the edge of the spray plate 112. By combining the above two methods, the uneven coating problem in a single direction of the transmission path and the uneven concentration problem in all directions caused by the structure of the spray plate 112 can be improved at the same time. By combining the two methods, the uneven coating problem caused by different reasons can be targetedly improved separately to effectively increase the uniformity of the coating.

[0054] In some embodiments, the plane of the guide structure 14 close to the center of the shower plate 112 is gradually inclined in the direction from the shower plate 112 to the carrier 12, and away from the center of the shower plate 112. In this way, the process gas can be guided to increase the concentration of the process gas in the edge area. Optionally, the cross-sectional area of ​​the guide structure 14 gradually decreases in the direction close to the carrier 12, and the plane of the guide structure 14 away from the center of the shower plate 112 is perpendicular to the plane where the shower plate 112 is located.

[0055] In some embodiments, in combination Figure 7 and Figure 8 The thickness direction of the back plate 111 is the height direction of the deposition system 1 (the height direction may also be the spacing direction between the carrier 12 and the electrode structure 11), and the distance from the edge of the carrier 12 to the guide structure 14 in the height direction is H 1 . Combined Figure 8 In the illustration, H 1 It refers to the distance from the edge of the carrier 12 to the position corresponding to the orthographic projection of the edge of the carrier 12 on the guide structure 14. Optionally, the upper surface of the carrier 12 is arranged in a plane. The distance from the center of the shower plate 112 to the carrier 12 in the height direction is H 2 , H 1 :H 2 The ratio of the distance between the center of the shower plate 112 and the carrier 12 is 0.5:1 to 0.9:1. For example, 0.6:1, 0.7:1 or 0.8:1. By setting a suitable distance ratio from the center of the shower plate 112 to the carrier 12, the concentration ratio of the center area and the edge area can be matched, so that the concentration difference between the center area and the edge area can be compensated by setting the height ratio.

[0056] In some embodiments, the thickness direction of the back plate 111 is the height direction of the deposition system 1 (the height direction may also be the spacing direction between the stage 12 and the electrode structure 11). Figure 8 As shown in FIG. 1 , the distance in the height direction from the edge of the carrier 12 to the end of the guide structure 14 close to the center of the shower plate 112 is H 3 In some embodiments, H 3 That is, the distance between the transition point between the flow guide structure 14 and the shower plate 112 and the edge of the carrier 12 in the height direction. The distance between the center of the shower plate 112 and the carrier 12 in the height direction is H. 2 , H 3 :H 2 is 0.9:1 to 1:1. For example, 0.92:1, 0.95:1 or 0.98:1. Optionally, the distance between the shower plate 112 and the carrier 12 gradually decreases from the center to the edge of the shower plate 112. The carrier 12 is arranged in a plane. In other words, in H 3 :H 2 When the ratio is 1:1, the shower plate 112 is also arranged in a plane. In other cases, the center of the shower plate 112 is farther from the carrier 12 than other parts. In the above manner, the center of the shower plate 112 with a higher input process gas concentration can be farther from the carrier 12, while the edge of the shower plate 112 with a lower input process gas concentration can be closer to the carrier 12. Thus, by setting a gradual change in the distance between the shower plate 112 and the carrier 12, the concentration of the process gas at the carrier 12 can be compensated, so that the concentration of the process gas at the carrier 12 is more uniform.

[0057] In some embodiments, H 2 The value range is 10 to 50 mm, for example, 11 mm, 18 mm, 23 mm, 25 mm, 28 mm, 33 mm, 38 mm, 45 mm or 48 mm.

[0058] In some embodiments, the guide structure 14 has a width in a direction perpendicular to the interval between the carrier 12 and the electrode structure 11. The width of the guide structure 14 can be represented by L. 1 Indicates. 1 The range is 5mm to 500mm, such as 20mm, 60mm, 80mm or 200mm.

[0059] Figure 1 This is a schematic diagram of measuring the thickness of the film layer by partition after a phosphorus-doped amorphous silicon film is deposited on the substrate surface by a plasma enhanced chemical vapor deposition (PECVD) device in the related art. Figure 1The process parameters and thickness of the substrate coating are summarized, and each value represents the average film thickness of the substrate. The unit of film thickness is nanometer (nm), the same below. The following will give examples of multiple embodiments that adopt the technical means of the present application in the form of a table, so as to illustrate that the present application can improve the uniformity of coating. Among them, the uniformity of the coating is expressed by the percentage of film thickness unevenness. The calculation formula is film thickness unevenness = (maximum film thickness - minimum film thickness) / (maximum film thickness + minimum film thickness) * 100%. The smaller the percentage, the more uniform the film thickness.

[0060]

[0061]

[0062] The above table shows the thickness uniformity of the coating without using the technical means of the present application in the related art.

[0063] The following describes a number of different embodiments in a table format, with the same substrate coating process parameters (power density, temperature, gas type and ratio), and a target film thickness of 50 nm. In the embodiment, the magnetic structure 13 includes a first magnet pair 131 and a second magnet pair 132 that are spaced apart on the back plate 111 along the transmission path; the flow guide structure 14 is disposed around the shower plate 112.

[0064] In Examples 1-4, the length L of the flow guiding structure 14 is 1 35mm, H 3 :H 2 =1:1,H 1 :H 2 =0.79:1; the shortest distances between the edge of the orthographic projection of the stage 12 on the back plate 111 and the first magnet pair 131 and the second magnet pair 132 are the same and are both L 2 , by adjusting L 2 The size of the deposited film thickness is compared with the non-uniformity.

[0065] In Embodiment 5-9, the shortest distance L between the edge of the orthographic projection of the carrier 12 on the back plate 111 and the first magnet pair 131 and the second magnet pair 132 is 2 Same and L 2 =5cm; the length L of the flow guiding structure 14 1 35mm, H 3 :H 2 =1:1, by adjusting H 1 :H 2 The ratio is used to compare the unevenness of the deposited film thickness.

[0066] Embodiment 1:

[0067]

[0068]

[0069] Embodiment 2:

[0070]

[0071] Embodiment 3:

[0072]

[0073]

[0074] Embodiment 4:

[0075]

[0076] Embodiment 5:

[0077]

[0078] Embodiment 6:

[0079]

[0080]

[0081] Embodiment 7:

[0082]

[0083] Embodiment 8:

[0084]

[0085]

[0086] Embodiment 9:

[0087]

[0088] By comparing the above comparative example with the embodiment, by arranging magnetic structures 13 on opposite sides of the back plate 111 and arranging flow guide structures 14 around the edge of the shower plate 112, 2 ≤10cm, and H 1 :H 2 When the ratio is 0.5:1 to 0.9:1, the unevenness of the overall film thickness in the chamber is reduced from 10 to 15% to 5 to 10%, and the overall coating uniformity of the chamber is significantly improved.

[0089] In summary, the electrode structure 11 of the deposition system 1 of the present application increases the electric field strength on both sides of the carrier transmission direction by arranging magnetic structures 13 at intervals along the transmission path on the back plate 111, thereby increasing the coating thickness on both sides of the carrier transmission. Further, by arranging a guide structure 14 around the edge of the spray plate 112, the air pressure difference between the center area and the edge area of ​​the chamber is balanced, so that the effective plasma active substances stay in the edge area for a longer time, thereby increasing the coating thickness of the edge area around the chamber. Further, through the superposition effect of the above two schemes, the problem of thin film thickness around the edges of the chamber is significantly improved, especially the problem of thinner coating thickness in the edge areas on both sides along the carrier transmission direction, and the coating uniformity is improved significantly.

[0090] The contents introduced in the above comparative examples and embodiments are illustrated by using PECVD equipment, and the deposition system may also be, for example, ALD equipment or other types of equipment.

[0091] The above are merely embodiments of the present application and are not intended to limit the patent scope of the present application. Any equivalent structure or equivalent process transformation made using the contents of the present application specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present application.

Claims

1. A deposition system, characterized in that: include: An electrode structure, the electrode structure comprising a back plate and a spray plate mounted on the back plate; A carrier, opposite to the electrode structure and spaced apart, the spray plate is disposed between the carrier and the back plate, and the carrier is used to carry the substrate; A magnetic structure is installed on the back plate; the magnetic structure is respectively arranged on two opposite sides perpendicular to the thickness direction of the back plate.

2. The deposition system according to claim 1, characterized in that: The deposition system has a transport path, and the magnetic structures are spaced apart on opposite sides of the transport path.

3. The deposition system according to claim 1 or 2, characterized in that: The magnetic structure includes a first magnet pair and a second magnet pair, the first magnet pair is arranged on one of the two opposite sides perpendicular to the thickness direction of the back plate, and the second magnet pair is arranged on the other side of the two opposite sides perpendicular to the thickness direction of the back plate; the structure of the first magnet pair and the second magnet pair are symmetrically arranged about the magnetic pole center, and the first magnet pair and the second magnet pair are used to form a magnetic field to improve the electric field distribution of the electrode structure.

4. The deposition system according to claim 3, characterized in that: The orthographic projection of the carrier on the back plate is at least partially located outside the first magnet pair and the second magnet pair, and a substrate carrying area is provided on the carrier, and the orthographic projection of the substrate carrying area on the back plate is located between the first magnet pair and the second magnet pair.

5. The deposition system according to claim 3, characterized in that: The first magnet pair includes a first magnetic component arranged on the side of the back plate away from the spray plate, and a second magnetic component arranged on the side of the back plate close to the spray plate; the two magnetic poles of the first magnetic component are arranged opposite to each other in the extension direction thereof, and the two magnetic poles of the second magnetic component are arranged opposite to each other in the extension direction thereof, and the magnetic poles of the first magnetic component and the second magnetic component are oriented in opposite directions.

6. The deposition system according to claim 5, characterized in that: The second magnet pair includes a third magnetic component arranged on the side of the back plate away from the spray plate, and a fourth magnetic component arranged on the side of the back plate close to the spray plate; the two magnetic poles of the third magnetic component are arranged opposite to each other in its extension direction, and the two magnetic poles of the fourth magnetic component are arranged opposite to each other in its extension direction, the magnetic poles of the third magnetic component and the fourth magnetic component are oriented in opposite directions, and the magnetic poles of the first magnetic component and the third magnetic component are oriented in opposite directions.

7. The deposition system according to claim 1, characterized in that: The magnetic structure comprises a shell and at least one magnet disposed in the shell and arranged in series, wherein a cooling space is formed between the magnet and the shell for a cooling matrix to pass through.

8. The deposition system according to any one of claims 1 to 7, characterized in that: The spray plate is provided with flow guiding structures on at least two opposite sides close to one side of the carrier.

9. The deposition system according to claim 8, characterized in that: The guide structures are arranged in a plurality along the circumference of the carrier and surround the spray plate. The guide structures extend along the edge of the spray plate and are connected end to end.

10. The deposition system according to claim 8, characterized in that: The cross-sectional area of ​​the flow guide structure gradually decreases in the direction approaching the carrier, and the plane of the flow guide structure away from the center of the shower plate is arranged perpendicular to the plane where the shower plate is located. The plane of the guide structure close to the center of the shower plate is gradually inclined in the direction from the shower plate toward the carrier and away from the center of the shower plate.

11. The deposition system according to claim 8, characterized in that: The thickness direction of the back plate is the height direction, the distance from the edge of the carrier to the guide structure in the height direction is H1, the distance from the center of the shower plate to the carrier in the height direction is H2, and H1:H2 is 0.5:1 to 0.9:

1.

12. The deposition system according to claim 11, characterized in that: The thickness direction of the back plate is the height direction, and the distance from the edge of the carrier to the end of the guide structure close to the center of the shower plate in the height direction is H. 3， The distance from the center of the shower plate to the carrier in the height direction is H2, and H3:H2 is 0.9:1 to 1:

1.

13. The deposition system according to claim 11 or 12, characterized in that: The value range of H2 is 10~50mm.

14. The deposition system according to claim 1, characterized in that: The spray plate and the back plate are arranged to form a spray space, the back plate is provided with an air inlet duct communicating with the spray space, and part of the magnetic structure is arranged in the spray space.

15. The deposition system according to claim 1, characterized in that: The deposition system further comprises two heating plates arranged opposite to each other, and the backing plate, the shower plate and the carrier are arranged between the heating plates.

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