Single crystal furnace

Abstract

The invention provides a single crystal furnace, which comprises: a flow guide part, which is arranged in a liftable manner; the heat preservation component is arranged outside the flow guide component in a sleeving manner; the crucible component is located in the heat preservation component, and the crucible component is arranged below the flow guide component in a rotatable and / or lifting mode; a first part of the exhaust channel is located on the flow guide component, a second part of the exhaust channel is located on the heat preservation component, an air inlet of the exhaust channel is located in the lower end of the flow guide component and faces the interior of the crucible component, and an air outlet of the exhaust channel is located in the heat preservation component and faces the outer side of the crucible component; when the upper end of the flow guide component moves to be in lap joint with the upper end of the heat preservation component, the first part and the second part of the exhaust channel are communicated. And when the upper end of the flow guide component moves to be separated from the upper end of the heat preservation component, the first part and the second part of the exhaust channel are disconnected, so that the problem of low exhaust efficiency in the crucible of the single crystal furnace in the prior art is solved.

Description

Technical Field

[0001] The invention relates to the technical field of single crystal furnaces, and in particular to a single crystal furnace. Background Art

[0002] In recent years, with the growing global demand for renewable energy, photovoltaic power generation has become increasingly important as a key component of green energy and sustainable development. The booming photovoltaic industry, especially the widespread application of monocrystalline silicon solar cells, has put forward higher requirements on the quality of monocrystalline silicon ingots. Therefore, how to improve the quality of ingots has become one of the core topics in the current research and development of photovoltaic materials.

[0003] During the growth of single crystal silicon, the optimization of thermal field design is crucial to improving the quality of the crystal rod. Traditional thermal field design focuses on the compactness and thermal efficiency of the thermal field, and often only retains the necessary safety distance to ensure the thermal stability between the thermal field components. However, in this design, during the crystal growth process, as the crucible rises, the gas path in the furnace will gradually narrow, which not only limits the timely discharge of volatile impurities, but also may promote the enrichment of impurities, thereby adversely affecting the purity and quality of the crystal rod.

[0004] In the crystal pulling process, the crucible-to-silicon ratio technology is often used to maintain the relative stability of the molten silicon liquid level. However, as the amount of residual material gradually decreases, the crucible has to rise to adapt to the liquid level, which leads to the further narrowing of the upper gas path. At the same time, the gas exhaust path becomes longer, the exhaust efficiency decreases, the volatiles in the furnace cannot be effectively removed, the accumulation of impurities intensifies, and ultimately reduces the quality of the crystal rod.

[0005] At present, most single crystal furnaces adopt a bottom exhaust design, which is more effective in the early stage of crystal growth. However, as the process progresses, especially as the crucible position rises, the airflow in the furnace is blocked and the exhaust efficiency decreases. Although there is a potential demand to change the gas path, it is difficult to achieve a significant improvement in exhaust efficiency due to the limitations of existing processes and technologies, which affects the impurity control and quality assurance in the production process of single crystal silicon ingots.

[0006] The existence of the above problems indicates that the existing technology is still insufficient in the exhaust design of the single crystal growth furnace, and a more efficient and reliable exhaust design is urgently needed to overcome the problem of impurity enrichment caused by the unsmooth airflow in the furnace and improve the quality and purity of the single crystal silicon ingot. This demand is of great significance not only to JinkoSolar Co., Ltd., but also to the entire photovoltaic industry. Summary of the invention

[0007] The main purpose of the present invention is to provide a single crystal furnace to solve the problem of low exhaust efficiency in the crucible of the single crystal furnace in the prior art.

[0008] To achieve the above-mentioned purpose, according to one aspect of the present invention, a single crystal furnace is provided, comprising: a flow guide component, which can be raised and lowered; a heat-insulating component, which is sleeved outside the flow guide component; a crucible component, which is located in the heat-insulating component, and which is rotatably and / or liftably arranged below the flow guide component; an exhaust channel, wherein a first portion of the exhaust channel is located on the flow guide component, a second portion of the exhaust channel is located on the heat-insulating component, an air inlet of the exhaust channel is located at the lower end of the flow guide component and is arranged toward the inside of the crucible component, and an air outlet of the exhaust channel is located on the heat-insulating component and is arranged toward the outside of the crucible component; wherein, when the upper end of the flow guide component moves to overlap with the upper end of the heat-insulating component, the first portion and the second portion of the exhaust channel are connected; when the upper end of the flow guide component moves to separate from the upper end of the heat-insulating component, the first portion and the second portion of the exhaust channel are disconnected.

[0009] Furthermore, the single crystal furnace also includes: a main furnace chamber shell, the guide component and the insulation component are both located in the main furnace chamber shell; a main heating component, the main heating component is located in the insulation component and is arranged outside the crucible component around the circumference of the crucible component; wherein the air outlet is arranged toward the main heating component.

[0010] Further, the exhaust channel includes: a first channel, a first channel is arranged on the guide component, and a first inlet and a first outlet of the first channel are respectively located at the lower end and the upper end of the guide component; a second channel is arranged on the heat-insulating component, and a second inlet and a second outlet of the second channel are respectively located at the upper end and the middle part of the heat-insulating component; wherein, when the upper end of the guide component moves to overlap with the upper end of the heat-insulating component, the first outlet and the second inlet are connected, the first inlet is an air inlet, and the second outlet is an air outlet.

[0011] Furthermore, the flow guide component comprises a first flow guide tube and a second flow guide tube, and the first flow guide tube is sleeved outside the second flow guide tube; wherein the first channel is arranged on the first flow guide tube.

[0012] Furthermore, the first channel includes a first hole segment, a second hole segment and a third hole segment which are connected in sequence along the gas flow direction; wherein the distance between the first hole segment and the center line of the guide component gradually decreases from top to bottom; the second hole segment is parallel to the center line of the guide component; a part of the third hole segment is perpendicular to the center line of the guide component and another part of the third hole segment is parallel to the center line of the guide component.

[0013] Furthermore, the insulation component includes an annular insulation cover, an insulation tube and a liner ring which are arranged in sequence from top to bottom, the inner side of the upper end of the annular insulation cover is connected to the flow guide component, the outer side of the lower end of the annular insulation cover is connected to the upper end of the insulation tube, and the lower end of the insulation tube is connected to the inner side of the upper end of the liner ring; wherein the second channel includes a fourth hole segment, a fifth hole segment and a sixth hole segment which are connected in sequence along the gas flow direction, and the fourth hole segment, the fifth hole segment and the sixth hole segment are arranged one by one on the annular insulation cover, the insulation tube and the liner ring.

[0014] Furthermore, a portion of the fourth hole segment is parallel to the center line of the insulation component and another portion of the fourth hole segment is perpendicular to the center line of the insulation component; the fifth hole segment is parallel to the center line of the insulation component; and the sixth hole segment is parallel to the center line of the insulation component.

[0015] Furthermore, there are multiple first channels, and the multiple first channels are spaced around the center line of the guide component; there are multiple second channels, and the multiple second channels are spaced around the center line of the heat preservation component; wherein the multiple second channels are connected to the multiple first channels in a one-to-one correspondence.

[0016] Furthermore, the flow cross-section of the first channel and the flow cross-section of the second channel are both circular, wherein the diameter of the flow cross-section of the first channel is 8 mm to 12 mm; the diameter of the flow cross-section of the second channel is 8 mm to 12 mm.

[0017] Furthermore, the flow cross-section of the first channel and the flow cross-section of the second channel are both circular, wherein the diameter of the flow cross-section of the first channel is 10 mm; the diameter of the flow cross-section of the second channel is 10 mm.

[0018] Applying the technical scheme of the present invention, the single crystal furnace of the present invention comprises: a flow guide component, which can be raised and lowered; a heat-insulating component, which is sleeved outside the flow guide component; a crucible component, which is located in the heat-insulating component, and the crucible component can be rotatably and / or raised and lowered below the flow guide component; an exhaust channel, wherein the first part of the exhaust channel is located on the flow guide component, the second part of the exhaust channel is located on the heat-insulating component, the air inlet of the exhaust channel is located at the lower end of the flow guide component and is arranged toward the inside of the crucible component, and the air outlet of the exhaust channel is located on the heat-insulating component and is arranged toward the outside of the crucible component; wherein, when the upper end of the flow guide component moves to overlap with the upper end of the heat-insulating component, the first part and the second part of the exhaust channel are connected; when the upper end of the flow guide component moves to separate from the upper end of the heat-insulating component, the first part and the second part of the exhaust channel are disconnected. In this way, the single crystal furnace of the present invention can quickly discharge the gas inside the crucible component to the outside of the crucible component by setting the exhaust channel, thereby optimizing the gas flow path, increasing the exhaust efficiency of the gas inside the crucible component, and can effectively improve the gas flow efficiency during the single crystal growth process, ensure the uniformity of temperature and pressure in the furnace, and improve the stability and uniformity of single crystal growth, thereby improving the quality and efficiency of single crystal growth, solving the problem of low exhaust efficiency in the crucible of the single crystal furnace in the prior art, reducing the impurity enrichment above the liquid surface in the crucible component, thereby improving the quality of the generated crystal rod, reducing energy consumption, reducing production costs, enhancing the stability and reliability of the single crystal furnace, and bringing significant economic benefits to industrial production. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] The drawings constituting a part of the present application are used to provide a further understanding of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:

[0020] Figure 1 A schematic structural diagram of an embodiment of a single crystal furnace according to the present invention is shown;

[0021] Figure 2 Shows Figure 1 A cross-sectional view of a single crystal furnace is shown;

[0022] Figure 3 Shows Figure 2 A partial enlarged view of the single crystal furnace at point A shown;

[0023] Figure 4 Shows Figure 2 The shown single crystal furnace is a partial enlarged view of position A when the heat preservation component is not included;

[0024] Figure 5 Shows Figure 2 The shown single crystal furnace is a partially enlarged view of position A when the guide component is not included.

[0025] The above drawings include the following reference numerals:

[0026] 1. flow guide component; 11. first flow guide cylinder;

[0027] 2. Insulation component; 21. Ring-shaped insulation cover; 22. Insulation cylinder; 23. Lining ring;

[0028] 3. Main furnace chamber shell; 4. Crucible component; 5. Main heating component; 6. Water cooling component;

[0029] 100, exhaust channel; 110, air inlet; 120, air outlet;

[0030] 10, first channel; 101, first hole section; 102, second hole section; 103, third hole section; 111, first inlet; 112, first outlet;

[0031] 20, second channel; 201, fourth hole segment; 202, fifth hole segment; 203, sixth hole segment; 211, second inlet; 212, second outlet. DETAILED DESCRIPTION

[0032] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present invention will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0033] like Figures 1 to 5 As shown, the present invention provides a single crystal furnace, comprising: a flow guide component 1, which can be raised and lowered; a heat-insulating component 2, which is sleeved outside the flow guide component 1; a crucible component 4, which is located in the heat-insulating component 2, and which is rotatably and / or liftably arranged below the flow guide component 1; an exhaust channel 100, wherein the first part of the exhaust channel 100 is located on the flow guide component 1, the second part of the exhaust channel 100 is located on the heat-insulating component 2, the air inlet 110 of the exhaust channel 100 is located at the lower end of the flow guide component 1 and is arranged toward the inside of the crucible component 4, and the air outlet 120 of the exhaust channel 100 is located on the heat-insulating component 2 and is arranged toward the outside of the crucible component 4; wherein, when the upper end of the flow guide component 1 moves to overlap with the upper end of the heat-insulating component 2, the first part and the second part of the exhaust channel 100 are connected; when the upper end of the flow guide component 1 moves to separate from the upper end of the heat-insulating component 2, the first part and the second part of the exhaust channel 100 are disconnected.

[0034] In this way, the single crystal furnace of the present invention can quickly discharge the gas inside the crucible part 4 to the outside of the crucible part 4 by setting the exhaust channel 100, thereby optimizing the gas flow path, increasing the exhaust efficiency of the gas inside the crucible part 4, and can effectively improve the gas flow efficiency during the single crystal growth process, ensure the uniformity of temperature and pressure in the furnace, and improve the stability and uniformity of single crystal growth, thereby improving the quality and efficiency of single crystal growth, solving the problem of low exhaust efficiency in the crucible of the single crystal furnace in the prior art, reducing the impurity enrichment above the liquid surface in the crucible part 4, thereby improving the quality of the generated crystal rod, reducing energy consumption, reducing production costs, enhancing the stability and reliability of the single crystal furnace, and bringing significant economic benefits to industrial production.

[0035] The technical effects of the single crystal furnace of the present invention being provided with the exhaust channel 100 are specifically as follows:

[0036] (1) Significantly improved exhaust efficiency: The exhaust channel 100 is cleverly arranged on the flow guide component 1 and the heat preservation component 2, which effectively improves the gas flow path and improves the exhaust efficiency. During the crystal pulling process, even if the gas path of the single crystal furnace becomes narrower as the liquid level of the crucible component 4 gradually approaches the flow guide component 1, at this time, due to the pressure difference at both ends of the exhaust channel 100, the impurities and volatiles in the crucible component 4 will reach the gas outlet 120 through the gas inlet 110 of the exhaust channel 100, so that the single crystal furnace can still maintain a good airflow circulation, avoiding the problem of exhaust obstruction.

[0037] (2) Impurity enrichment is significantly reduced: Volatile substances and impurities can be removed in time, which significantly reduces the impurity enrichment above the liquid surface. The impurity traces on the surface of the generated crystal rod are reduced, effectively reducing the defect rate of the crystal rod.

[0038] (3) The quality of the crystal rod is significantly improved: the interference of impurities on the growth environment of the crystal rod is reduced, thereby improving the life and electrical performance of the crystal rod, so that it can show better conversion efficiency in the subsequent photovoltaic cell manufacturing process.

[0039] (4) Good process compatibility: The exhaust channel 100 design of the present invention is highly compatible with the single crystal furnace thermal field design and crystal pulling process of the prior art. There is no need for large-scale transformation of existing equipment, and it is easy to promote and implement, thus lowering the threshold for technology application.

[0040] (5) Significant economic benefits: By improving the quality of crystal rods, the defective rate is reduced, the scrap cost is reduced, and the production efficiency and economic benefits of single crystal battery cells are improved.

[0041] like Figures 2 to 5As shown, the single crystal furnace further includes: a main furnace chamber shell 3, the flow guide component 1 and the heat preservation component 2 are both located in the main furnace chamber shell 3; a main heating component 5, the main heating component 5 is located in the heat preservation component 2 and is arranged outside the crucible component 4 around the circumference of the crucible component 4; wherein the gas outlet 120 is arranged toward the main heating component 5. This optimizes the distribution of the thermal field and the airflow, improves the thermal efficiency and the gas flow efficiency, helps to improve the efficiency and quality of single crystal growth, shortens the single crystal growth cycle, reduces energy consumption, is particularly suitable for large-scale industrial production environments, can significantly improve production efficiency, reduce operating costs, and is suitable for efficient production of semiconductor devices and photovoltaic modules.

[0042] Specifically, the present invention sets the air outlet 120 toward the main heating component 5, which has the following technical effects:

[0043] (1) Lowering the temperature of the main heating component 5: The gas outlet 120 is arranged toward the main heating component 5, which can promote the effective discharge of the gas in the crucible component 4, thereby reducing the accumulation of heat in the crucible component 4. The temperature of the gas discharged from the gas outlet is lower than the temperature of the main heating component 5, so the temperature of the main heating component 5 can be lowered, which helps to reduce the load of the main heating component 5, achieve more stable temperature control, and thus reduce the overall energy consumption and operating costs.

[0044] (2) Reducing the adhesion of silicon carbide: The main heating component 5 is made of carbon. The gas discharged from the outlet can reduce the temperature of the main heating component 5, thereby reducing the formation of silicon carbide on the main heating component 5, alleviating the problem of uneven heating caused by silicon carbide, and improving the heating efficiency and the uniformity of crystal rod growth.

[0045] (3) Improving the life of the main heating component 5: Since the arrangement of the gas outlet 120 toward the main heating component 5 reduces the formation of silicon carbide, the corrosion and wear of the main heating component 5 are reduced, thereby significantly improving its service life. In addition, more uniform heating conditions also help reduce thermal stress, further extending the service life of the main heating component 5.

[0046] (4) Optimizing the thermal field design: By setting the direction of the air outlet 120, the thermal field design is optimized, achieving reasonable coordination of air flow, heat flow and material flow, reducing unnecessary heat loss, and improving the efficiency and controllability of single crystal growth.

[0047] like Figures 3 to 5 As shown, the single crystal furnace further includes a water cooling component 6 arranged in the flow guide component 1 .

[0048] like Figures 3 to 5As shown, the exhaust channel 100 includes: a first channel 10, the first channel 10 is provided on the guide component 1, and the first inlet 111 and the first outlet 112 of the first channel 10 are respectively located at the lower end and the upper end of the guide component 1; a second channel 20, the second channel 20 is provided on the insulation component 2, and the second inlet 211 and the second outlet 212 of the second channel 20 are respectively located at the upper end and the middle part of the insulation component 2; wherein, when the upper end of the guide component 1 moves to overlap with the upper end of the insulation component 2, the first outlet 112 and the second inlet 211 are connected; the first inlet 111 is the air inlet 110, and the second outlet 212 is the air outlet 120. In this way, the purpose of leading the gas in the crucible component 4 out of the crucible component 4 is achieved, the pressure and temperature in the furnace can be more finely controlled, and the single crystal defects caused by temperature and pressure fluctuations during the growth process are effectively avoided, which is particularly beneficial for the single crystal growth process that requires high-precision control, such as the growth of single crystal silicon in semiconductor device manufacturing, and improves the quality of single crystal materials.

[0049] like Figures 3 to 5 As shown, the flow guide component 1 includes a first flow guide tube 11 and a second flow guide tube (not shown in the figure), and the first flow guide tube 11 is sleeved outside the second flow guide tube; wherein the first channel 10 is arranged on the first flow guide tube 11. This double-layer flow guide tube design can effectively isolate the influence of the external environment on the growth process in the furnace, and improve the purity and consistency of single crystal growth. The first channel 10 is arranged on the outer first flow guide tube 11, which is conducive to its connection with the second channel 20, and reduces the processing steps of the first channel 10. Figure 3 and Figure 4 As shown, the first channel 10 includes a first hole segment 101, a second hole segment 102 and a third hole segment 103 connected in sequence along the gas flow direction; wherein the distance between the first hole segment 101 and the center line of the flow guide component 1 gradually decreases from top to bottom; the second hole segment 102 is parallel to the center line of the flow guide component 1; a part of the third hole segment 103 is perpendicular to the center line of the flow guide component 1 and another part of the third hole segment 103 is parallel to the center line of the flow guide component 1. This can effectively improve the uniformity of gas flow, reduce airflow dead angles, and has a significant effect on improving the efficiency and quality of single crystal growth. It is suitable for production environments that require large-scale, high-efficiency and high-quality single crystal materials, such as the manufacture of semiconductor devices and photovoltaic modules, etc., reducing production costs and improving the market competitiveness of products.

[0050] like Figure 3 and Figure 5As shown, the insulation component 2 includes an annular insulation cover 21, an insulation tube 22 and a liner ring 23 which are arranged in sequence from top to bottom, the inner side of the upper end of the annular insulation cover 21 is connected to the flow guide component 1, the outer side of the lower end of the annular insulation cover 21 is connected to the upper end of the insulation tube 22, and the lower end of the insulation tube 22 is connected to the inner side of the upper end of the liner ring 23; wherein, the second channel 20 includes a fourth hole segment 201, a fifth hole segment 202 and a sixth hole segment 203 which are connected in sequence along the gas flow direction, and the fourth hole segment 201, the fifth hole segment 202 and the sixth hole segment 203 are arranged one by one on the annular insulation cover 21, the insulation tube 22 and the liner ring 23.

[0051] like Figure 3 and Figure 5 As shown, the heat-insulating component 2 further includes a lower heat-insulating cover arranged below the liner ring 23 .

[0052] like Figure 3 and Figure 5 As shown, a portion of the fourth hole segment 201 is parallel to the center line of the heat preservation component 2 and another portion of the fourth hole segment 201 is perpendicular to the center line of the heat preservation component 2; the fifth hole segment 202 is parallel to the center line of the heat preservation component 2; and the sixth hole segment 203 is parallel to the center line of the heat preservation component 2. This ensures uniform distribution of gas inside the heat preservation component, effectively reduces temperature gradients, improves uniformity and stability of single crystal growth, is suitable for single crystal growth environments that require high-precision temperature control, significantly improves product performance and reliability, and reduces production costs.

[0053] Specifically, there are multiple first channels 10, which are arranged at intervals around the center line of the flow guide component 1; there are multiple second channels 20, which are arranged at intervals around the center line of the heat preservation component 2; wherein the multiple second channels 20 are connected to the multiple first channels 10 in a one-to-one correspondence. In this way, by increasing the number of first channels 10 and second channels 20, the uniformity and controllability of the gas flow in the single crystal furnace can be further improved, which is of great significance for industrial applications that require large-scale, high-efficiency single crystal growth, such as silicon single crystal growth of solar panels, reducing production costs, improving energy conversion efficiency, and promoting the development of clean energy.

[0054] Preferably, the flow cross section of the first channel 10 and the flow cross section of the second channel 20 are both circular, and the diameter of the flow cross section of the first channel 10 is 8 mm to 12 mm; the diameter of the flow cross section of the second channel 20 is 8 mm to 12 mm. The selection of this aperture range can reduce the resistance in the gas flow process while ensuring the gas flow efficiency, improve the operation efficiency and stability of the single crystal furnace, improve the adaptability and production efficiency of the single crystal furnace, and is suitable for single crystal growth processes of various scales, from small laboratory research to large-scale industrial production, such as laboratory scientific research projects and industrial-grade semiconductor material manufacturing.

[0055] Further preferably, the flow cross section of the first channel 10 and the flow cross section of the second channel 20 are both circular, and the diameter of the flow cross section of the first channel 10 is 10 mm; the diameter of the flow cross section of the second channel 20 is 10 mm. In this way, under the precise control of the aperture of 10 mm, the gas flow path is optimized, energy consumption is reduced, production costs are reduced, the stability and reliability of the single crystal furnace are enhanced, and significant economic benefits are brought to industrial production. It is particularly suitable for single crystal growth applications that require a balance between cost and efficiency, such as silicon single crystal production for consumer electronic products, achieving a perfect balance between cost and efficiency, and promoting technological progress and product innovation in the consumer electronics industry.

[0056] From the above description, it can be seen that the above embodiments of the present invention achieve the following technical effects:

[0057] The single crystal furnace of the present invention comprises: a flow guide component 1, which can be raised and lowered; a heat-insulating component 2, which is sleeved on the outside of the flow guide component 1; a crucible component 4, which is located in the heat-insulating component 2, and which is rotatably and / or liftably arranged below the flow guide component 1; an exhaust channel 100, wherein the first part of the exhaust channel 100 is located on the flow guide component 1, the second part of the exhaust channel 100 is located on the heat-insulating component 2, the air inlet 110 of the exhaust channel 100 is located at the lower end of the flow guide component 1 and is arranged toward the inside of the crucible component 4, and the air outlet 120 of the exhaust channel 100 is located on the heat-insulating component 2 and is arranged toward the outside of the crucible component 4; wherein, when the upper end of the flow guide component 1 moves to overlap with the upper end of the heat-insulating component 2, the first part and the second part of the exhaust channel 100 are connected; when the upper end of the flow guide component 1 moves to separate from the upper end of the heat-insulating component 2, the first part and the second part of the exhaust channel 100 are disconnected. In this way, the single crystal furnace of the present invention can quickly discharge the gas inside the crucible part 4 to the outside of the crucible part 4 by setting the exhaust channel 100, thereby optimizing the gas flow path, increasing the exhaust efficiency of the gas inside the crucible part 4, and can effectively improve the gas flow efficiency during the single crystal growth process, ensure the uniformity of temperature and pressure in the furnace, and improve the stability and uniformity of single crystal growth, thereby improving the quality and efficiency of single crystal growth, solving the problem of low exhaust efficiency in the crucible of the single crystal furnace in the prior art, reducing the impurity enrichment above the liquid surface in the crucible part 4, thereby improving the quality of the generated crystal rod, reducing energy consumption, reducing production costs, enhancing the stability and reliability of the single crystal furnace, and bringing significant economic benefits to industrial production.

[0058] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit the exemplary embodiments according to the present application. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprise" and / or "include" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0059] Unless otherwise specifically stated, the relative arrangement, numerical expressions and numerical values ​​of the parts and steps set forth in these embodiments do not limit the scope of the present application. At the same time, it should be understood that, for ease of description, the sizes of the various parts shown in the accompanying drawings are not drawn according to the actual proportional relationship. The technology, method and equipment known to those of ordinary skill in the relevant field may not be discussed in detail, but in appropriate cases, the technology, method and equipment should be considered as a part of the authorization specification. In all examples shown and discussed here, any specific value should be interpreted as being merely exemplary, rather than as a limitation. Therefore, other examples of exemplary embodiments may have different values. It should be noted that similar reference numerals and letters represent similar items in the following drawings, so that once a certain item is defined in an accompanying drawing, it does not need to be further discussed in subsequent drawings.

[0060] In the description of the present application, it should be understood that the directions or positional relationships indicated by directional words such as "front, back, up, down, left, right", "lateral, vertical, perpendicular, horizontal" and "top, bottom" are usually based on the directions or positional relationships shown in the drawings, and are only for the convenience of describing the present application and simplifying the description. Unless otherwise specified, these directional words do not indicate or imply that the device or element referred to must have a specific direction or be constructed and operated in a specific direction, and therefore cannot be understood as limiting the scope of protection of the present application; the directional words "inside and outside" refer to the inside and outside relative to the contours of each component itself.

[0061] For ease of description, spatially relative terms such as "above", "above", "on the upper surface of", "above", etc. may be used here to describe the spatial positional relationship between a device or feature and other devices or features as shown in the figure. It should be understood that spatially relative terms are intended to include different orientations of the device in use or operation in addition to the orientation described in the figure. For example, if the device in the accompanying drawings is inverted, the device described as "above other devices or structures" or "above other devices or structures" will be positioned as "below other devices or structures" or "below other devices or structures". Thus, the exemplary term "above" can include both "above" and "below". The device can also be positioned in other different ways (rotated 90 degrees or in other orientations), and the spatially relative descriptions used here are interpreted accordingly.

[0062] In addition, it should be noted that the use of terms such as "first" and "second" to limit components is only for the convenience of distinguishing the corresponding components. Unless otherwise stated, the above terms have no special meaning and therefore cannot be understood as limiting the scope of protection of this application.

[0063] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A single crystal furnace, characterized in that: include: A flow guide component (1), wherein the flow guide component (1) is arranged to be liftable; A heat-insulating component (2), wherein the heat-insulating component (2) is sleeved outside the flow-guiding component (1); A crucible component (4), the crucible component (4) being located inside the heat-insulating component (2), and the crucible component (4) being rotatably and / or liftably arranged below the flow-guiding component (1); an exhaust channel (100), wherein a first portion of the exhaust channel (100) is located on the flow guide component (1), a second portion of the exhaust channel (100) is located on the heat preservation component (2), an air inlet (110) of the exhaust channel (100) is located at the lower end of the flow guide component (1) and is arranged toward the interior of the crucible component (4), and an air outlet (120) of the exhaust channel (100) is located on the heat preservation component (2) and is arranged toward the outside of the crucible component (4); When the upper end of the flow guide component (1) moves to overlap with the upper end of the heat-insulating component (2), the first part and the second part of the exhaust channel (100) are connected; when the upper end of the flow guide component (1) moves to separate from the upper end of the heat-insulating component (2), the first part and the second part of the exhaust channel (100) are disconnected.

2. The single crystal furnace according to claim 1, characterized in that: The single crystal furnace also includes: A main furnace chamber shell (3), wherein the flow guide component (1) and the heat insulation component (2) are both located in the main furnace chamber shell (3); A main heating component (5), the main heating component (5) being located inside the heat-insulating component (2) and surrounding the circumference of the crucible component (4) and being arranged outside the crucible component (4); Wherein, the air outlet (120) is arranged toward the main heating component (5).

3. The single crystal furnace according to claim 1, characterized in that: The exhaust passage (100) comprises: A first channel (10), the flow guide component (1) being provided with the first channel (10), a first inlet (111) and a first outlet (112) of the first channel (10) being respectively located at the lower end and the upper end of the flow guide component (1); A second channel (20), the heat-insulating component (2) being provided with the second channel (20), the second inlet (211) and the second outlet (212) of the second channel (20) being respectively located at the upper end and the middle part of the heat-insulating component (2); Wherein, when the upper end of the flow-guiding component (1) moves to overlap with the upper end of the heat-insulating component (2), the first outlet (112) and the second inlet (211) are connected; the first inlet (111) is the air inlet (110), and the second outlet (212) is the air outlet (120).

4. The single crystal furnace according to claim 3, characterized in that: The flow guide component (1) comprises a first flow guide tube (11) and a second flow guide tube, wherein the first flow guide tube (11) is sleeved outside the second flow guide tube; wherein the first channel (10) is arranged on the first flow guide tube (11).

5. The single crystal furnace according to claim 3, characterized in that: The first channel (10) comprises a first hole segment (101), a second hole segment (102) and a third hole segment (103) which are sequentially connected along the gas flow direction; wherein, The distance between the first hole section (101) and the center line of the flow guide component (1) gradually decreases from top to bottom; and / or The second hole section (102) is parallel to the center line of the flow guide component (1); and / or A portion of the third hole segment (103) is perpendicular to the center line of the flow guide component (1) and another portion of the third hole segment (103) is parallel to the center line of the flow guide component (1).

6. The single crystal furnace according to claim 3, characterized in that: The heat-insulating component (2) comprises an annular heat-insulating cover (21), a heat-insulating tube (22) and a liner ring (23) which are arranged in sequence from top to bottom; the inner side of the upper end of the annular heat-insulating cover (21) is connected to the flow-guiding component (1); the outer side of the lower end of the annular heat-insulating cover (21) is connected to the upper end of the heat-insulating tube (22); and the lower end of the heat-insulating tube (22) is connected to the inner side of the upper end of the liner ring (23); wherein the second channel (20) comprises a fourth hole segment (201), a fifth hole segment (202) and a sixth hole segment (203) which are connected in sequence along the gas flow direction; the fourth hole segment (201), the fifth hole segment (202) and the sixth hole segment (203) are arranged in a one-to-one correspondence on the annular heat-insulating cover (21), the heat-insulating tube (22) and the liner ring (23).

7. The single crystal furnace according to claim 6, characterized in that: A portion of the fourth hole segment (201) is parallel to the center line of the heat-insulating component (2) and another portion of the fourth hole segment (201) is perpendicular to the center line of the heat-insulating component (2); and / or The fifth hole section (202) is parallel to the center line of the heat-insulating component (2); and / or The sixth hole section (203) is parallel to the center line of the heat-insulating component (2).

8. The single crystal furnace according to any one of claims 3 to 7, characterized in that: The number of the first channels (10) is multiple, and the multiple first channels (10) are arranged at intervals around the center line of the flow guide component (1); The number of the second channels (20) is plural, and the plurality of second channels (20) are arranged at intervals around the center line of the heat-insulating component (2); Wherein, a plurality of the second channels (20) are connected to a plurality of the first channels (10) in a one-to-one correspondence.

9. The single crystal furnace according to any one of claims 3 to 7, characterized in that: The flow cross section of the first channel (10) and the flow cross section of the second channel (20) are both circular, wherein: The diameter of the flow cross section of the first channel (10) is 8 mm to 12 mm; The diameter of the flow cross section of the second channel (20) is 8 mm to 12 mm.

10. The single crystal furnace according to any one of claims 3 to 7, characterized in that: The flow cross section of the first channel (10) and the flow cross section of the second channel (20) are both circular, wherein: The diameter of the flow cross section of the first channel (10) is 10 mm; The diameter of the flow cross section of the second channel (20) is 10 mm.

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