HTRB high-temperature reverse bias test method

Abstract

The invention relates to the technical field of reliability of power devices, and discloses an HTRB high-temperature reverse-bias test method, which comprises a test assembly arranged in a constant-temperature box, the test assembly comprises a first driving motor fixedly connected to the back of the constant-temperature box, the output end of the first driving motor is fixedly connected with a first output shaft, and the output end of the first output shaft is fixedly connected with a second output shaft. The outer wall of the first output shaft is rotatably connected with the inner wall of the constant-temperature box through a bearing, the first output shaft movably penetrates through the outer wall of the constant-temperature box and extends into the constant-temperature box, the other end of the first output shaft is fixedly connected with a rectangular frame, and the inner wall of the rectangular frame is slidably connected with a semiconductor device; the top of the rectangular frame is movably connected with a ventilation plate through a hinge, and through the arrangement of the test assembly, the semiconductor device can be uniformly heated by rotating the rectangular frame after the semiconductor device is fixed in the rectangular frame, so that a high-temperature reverse bias test is carried out.

Description

Technical Field

[0001] The invention relates to the technical field of power device reliability, in particular to a HTRB high temperature reverse bias test method. Background Art

[0002] With the rapid development of microelectronics technology and the continuous progress of human science and technology, power semiconductor devices have been widely used in aerospace, military, industrial, electric power and civil products. In order to ensure the stability of semiconductor devices in various products, many devices need to undergo some necessary aging and screening tests before use to ensure the reliable operation of the devices. For example, semiconductor field effect tubes need to undergo high temperature reverse bias tests (H i ghTemperatureReverseBias, abbreviated as HTRBO) during screening to test the stability and reliability of the product's PN junction.

[0003] A high-temperature reverse bias test system and method proposed in Chinese patent CN107861041A includes: a sample area to be tested, used to place at least one sample to be tested; a heat sink, the heat sink is connected to the sample to be tested through one or more heat pipes; the heat sink is equipped with a fan; an air duct, the heat sink is located in the air duct; a current collector, connected to the sample to be tested, used to collect the leakage current of the sample to be tested; a temperature control system, connected to the current collector, used to control the air volume of the fan according to the leakage current. When a constant temperature box is used for high-temperature reverse bias testing, the sample to be tested is equipped with a heat sink and a fan, and cooperates with the temperature control system to ensure the stability of the junction temperature of the sample to be tested. It has the advantages of compact structure, good heat dissipation effect and simple temperature control.

[0004] However, there are some shortcomings in this patent. In this patent, the sample to be tested is placed inside a constant temperature box and the temperature inside the constant temperature box is increased to achieve a high-temperature reverse bias test on the sample to be tested. Since the bottom of the sample to be tested is always in contact with the bottom of the inner wall of the constant temperature box, the test temperature of the bottom and top of the sample to be tested may be different during the test, thereby affecting the test result. Therefore, we propose a HTRB high-temperature reverse bias test method. Summary of the invention

[0005] The purpose of the present invention is to provide a HTRB high temperature reverse bias test method, which solves the problems raised in the above background technology.

[0006] To achieve the above object, the present invention provides the following technical solution: a HTRB high temperature reverse bias test method, comprising the following steps:

[0007] S1. First, place the semiconductor device that needs to be tested for high temperature reverse bias into a constant temperature box;

[0008] S2, then fix the semiconductor device to be tested by a clamping plate inside the constant temperature box;

[0009] S3, then, the heating wire inside the thermostat is energized to increase the temperature inside the thermostat, and the rectangular frame inside the thermostat rotates at a constant speed to uniformly heat the surface of the semiconductor device inside the thermostat, so that the semiconductor device in the thermostat 1 is heated evenly, and a high-temperature reverse bias test is achieved;

[0010] S4. Finally, take out the semiconductor device after the high-temperature reverse bias test, and dissipate the heat inside the constant temperature box through the heat dissipation blades.

[0011] Preferably, the test component inside the constant temperature box comprises a first driving motor fixedly connected to the back of the constant temperature box, the output end of the first driving motor is fixedly connected to the first output shaft, the outer wall of the first output shaft is rotatably connected to the inner wall of the constant temperature box through a bearing, the first output shaft movably passes through the outer wall of the constant temperature box and extends to the inside of the constant temperature box, the other end of the first output shaft is fixedly connected to a rectangular frame, the inner wall of the rectangular frame is slidably connected to a semiconductor device, the top of the rectangular frame is movably connected to a ventilation plate through a hinge, the bottom of the ventilation plate is fixedly connected to a clamping plate, the bottom of the clamping plate is slidably connected to the top of the semiconductor device, the top of the rectangular frame is fixedly connected to a T-shaped side plate, the inner wall of the T-shaped side plate is slidably connected to a pull rod, the outer wall of one end of the pull rod is slidably connected to the side inner wall of the ventilation plate, the other end of the pull rod is fixedly connected to a pull block, the side wall of the pull block is fixedly connected to a first spring, and the other end of the first spring is fixedly connected to the side wall of the T-shaped side plate, by setting a test Component, when it is necessary to perform a high-temperature reverse bias test on the semiconductor device, the operator can pull the pull block to cause the pull block to move with the pull rod, causing the first spring to extend, and then flip the ventilation plate to place the semiconductor device to be tested into the interior of the rectangular frame. After the semiconductor device is placed, the operator flips the ventilation plate to cause the bottom of the clamping plate to fit with the surface of the semiconductor device, and then releases the pull block. Under the reaction of the first spring, the pull rod will be reset, causing the pull rod to be inserted into the side inner wall of the rectangular frame, thereby resetting the rectangular frame, which is convenient for improving the stability of the semiconductor device when it is fixed. When the semiconductor device is subjected to a high-temperature reverse bias test, in order to make the semiconductor device evenly heated during the high-temperature reverse bias test, the semiconductor device needs to be turned over. At this time, the operator turns on the first drive motor to cause the first output shaft to rotate. During the rotation of the first output shaft, the rectangular frame will be rotated with it, thereby facilitating the uniform heating of the semiconductor device during the high-temperature reverse bias test.

[0012] Preferably, the test assembly also includes a limit groove opened on the inner wall of the constant temperature box, the outer wall of the first output shaft is fixedly sleeved with a gear, the bottom of the gear is meshed with a rack, the side wall of the rack is fixedly connected to a limit block, the outer wall of the limit block is slidably connected to the inner wall of the limit groove, the bottom of the rack is fixedly connected to an L-shaped plate, the other end of the L-shaped plate is fixedly connected to a movable plate, the top of the movable plate is fixedly connected to a connecting block, the inner wall of the connecting block is fixedly connected to a heating wire, the heating wire is located below the rectangular frame, and during the rotation of the first output shaft, the gear will rotate, and after the gear rotates, it will mesh with the rack, and under the action of limiting the rack by the limit groove and the limit block, the gear will move after the rotation, and after the rack moves, it will move with the movable plate through the L-shaped plate, and the operator energizes the heating wire to cause the interior of the constant temperature box to heat up, thereby achieving uniform heating of the semiconductor device, thereby performing a high temperature reverse bias test.

[0013] Preferably, the inner wall of the thermostatic box is fixedly connected with a sleeve, the inner wall of the sleeve is fixedly connected with a second spring, the other end of the second spring is fixedly connected with an extrusion rod, the outer wall of one end of the extrusion rod is slidably connected to the inner wall of the sleeve, and during the movement of the moving plate, the outer wall will squeeze the extrusion rod, causing the extrusion rod to compress the second spring, thereby achieving a buffering effect on the moving plate during the movement.

[0014] Preferably, a heat dissipation component is further provided inside the constant temperature box, and the heat dissipation component includes a fixing frame fixedly connected to the top of the inner wall of the constant temperature box, the inner wall of the fixing frame is fixedly connected to a double-headed motor, the output end of the double-headed motor is fixedly connected to a lead screw, the outer wall of the lead screw is threadedly connected to a socket block, the bottom of the socket block is movably connected to a rotating rod through a hinge, the other end of the rotating rod is movably connected to a lifting block through a hinge, the side wall of the rotating rod is fixedly connected to a second driving motor, the output end of the second driving motor is fixedly connected to a second output shaft, and the other end of the second output shaft is fixedly connected to a heat dissipation blade. By setting up the heat dissipation component, after the high-temperature reverse bias test on the semiconductor device is completed, due to the constant temperature box A large amount of heat will be generated inside the thermostat, so the inside of the thermostat needs to be cooled. At this time, the operator turns on the second drive motor to cause the second output shaft to rotate. During the rotation of the second output shaft, the heat dissipation blades will rotate, thereby facilitating the heat dissipation of the inside of the thermostat. During the heat dissipation process, the operator turns on the double-headed motor to cause the screw rod to rotate. During the rotation of the screw rod, the two socket blocks will be prompted to move relative to each other. When the two socket blocks are relatively close to each other, the rotating rod will be prompted to rotate and the lifting block will be prompted to move downward. During the rotation of the rotating rod, the second drive motor will be prompted to rotate accordingly, thereby adjusting the heat dissipation position of the heat dissipation blades to the inside of the thermostat and improving the heat dissipation effect.

[0015] Preferably, the heat dissipation assembly also includes a limit plate fixedly connected to the outer wall of the thermostatic box, the inner wall of the limit plate is slidably connected with a slider, the bottom of the slider is fixedly connected with a baffle, and the side wall of the baffle is slidably connected to the outer wall of the thermostatic box. Before dissipating heat inside the thermostatic box, the operator pulls the baffle to cause the slider on the top of the baffle to slide inside the limit plate, so that the baffle no longer seals the vents on both sides of the thermostatic box, thereby realizing ventilation of the interior of the thermostatic box.

[0016] Preferably, the bottom of the thermostatic box is fixedly connected with a support pad, and there are four support pads. The four support pads are equal in size and fixedly connected to the four corners of the bottom of the thermostatic box at equal distances. By setting four support pads, the thermostatic box can be supported by the four support pads.

[0017] Preferably, the front of the constant temperature box is movably connected to a box door via a hinge, the inner wall of the box door is fixedly connected to glass, and the front of the box door is fixedly connected to a handle. By realizing the box door, it is convenient for an operator to open the box door, place the semiconductor device into the constant temperature box for high-temperature reverse bias testing, and observe the test conditions inside the constant temperature box through the glass.

[0018] Preferably, the outer wall of one end of the limit block is matched with the inner wall of the limit groove, and the other end of the limit block is fixedly connected to the side wall of the rack. By setting the limit groove and the limit block, the rack can be limited to promote the movement of the rack.

[0019] Preferably, the heat dissipation blades are divided into two groups, and the two groups of heat dissipation blades are symmetrically distributed along the central plane of the lifting block. By arranging two groups of heat dissipation blades, the heat dissipation effect inside the constant temperature box can be improved.

[0020] The present invention provides a HTRB high temperature reverse bias test method. The HTRB high temperature reverse bias test method has the following beneficial effects:

[0021] (1) The HTRB high temperature reverse bias test method sets a test assembly. When a semiconductor device needs to be subjected to a high temperature reverse bias test, the operator can pull the pull block to move the pull block with the pull rod, thereby causing the first spring to extend. The operator then flips the ventilation plate and places the semiconductor device to be tested into the interior of the rectangular frame. After the semiconductor device is placed, the operator flips the ventilation plate to cause the bottom of the clamping plate to fit the surface of the semiconductor device. The operator then releases the pull block, and the pull rod is reset under the reaction of the first spring, causing the pull rod to be inserted into the side inner wall of the rectangular frame, thereby resetting the rectangular frame and improving the stability of the semiconductor device when it is fixed. When the semiconductor device is subjected to a high temperature reverse bias test, in order to make the semiconductor device evenly heated during the high temperature reverse bias test, the semiconductor device needs to be flipped over. At this time, The operator starts the first drive motor to cause the first output shaft to rotate. During the rotation of the first output shaft, the rectangular frame will rotate, so that the semiconductor device can be heated evenly during the high-temperature reverse bias test. During the rotation of the first output shaft, the gear will rotate. After the gear rotates, it will mesh with the rack. Under the action of limiting the rack by the limiting groove and the limiting block, the rack will move after the gear rotates. After the rack moves, the moving plate will move through the L-shaped plate. The operator energizes the heating wire to cause the interior of the constant temperature box to heat up, so as to achieve uniform heating of the semiconductor device, so as to perform the high-temperature reverse bias test. During the movement of the moving plate, its outer wall will squeeze the extrusion rod, so that the extrusion rod compresses the second spring, so as to achieve the buffering effect on the moving plate during the movement.

[0022] (2) The HTRB high temperature reverse bias test method sets a heat dissipation component. After the high temperature reverse bias test of the semiconductor device is completed, a large amount of heat will be generated inside the constant temperature box, so it is necessary to dissipate the heat inside the constant temperature box. At this time, the operator turns on the second drive motor to cause the second output shaft to rotate. During the rotation of the second output shaft, the heat dissipation blades will rotate, so as to facilitate the heat dissipation of the inside of the constant temperature box. During the heat dissipation process, the operator turns on the double-headed motor to cause the screw rod to rotate. During the rotation of the screw rod, the two socket blocks will move relative to each other. When the two socket blocks are relatively close, the rotating rod will rotate and the lifting block will move downward. During the rotation of the rotating rod, the second drive motor will rotate accordingly, so as to adjust the heat dissipation position of the heat dissipation blades to the inside of the constant temperature box, thereby improving the heat dissipation effect. Before the heat dissipation of the inside of the constant temperature box is carried out, the operator pulls the baffle to cause the slider on the top of the baffle to slide inside the limit plate, so that the baffle no longer seals the vents on both sides of the constant temperature box, thereby realizing ventilation of the inside of the constant temperature box. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 It is a schematic diagram of the testing method flow of the present invention;

[0024] Figure 2 It is a schematic diagram of the three-dimensional structure of the present invention;

[0025] Figure 3 is a cross-sectional view of the present invention;

[0026] Figure 4 It is a schematic diagram of the structure of the test assembly in the present invention;

[0027] Figure 5 It is a partial structural cross-sectional view of the test assembly in the present invention;

[0028] Figure 6 for Figure 5 A partial enlarged view of point B in the middle;

[0029] Figure 7 It is a schematic diagram of the side structure of the test assembly in the present invention;

[0030] Figure 8 for Figure 7 A partial enlarged view of the middle A;

[0031] Fig. 9 It is a schematic diagram of the structure of the heat dissipation component in the present invention.

[0032] In the figure: 1. constant temperature box; 2. support pad; 3. box door; 4. glass; 5. handle; 61. test assembly; 611. first drive motor; 612. first output shaft; 613. rectangular frame; 614. semiconductor device; 615. ventilation plate; 616. clamping plate; 617. T-shaped side plate; 618. pull rod; 619. pull block; 6110. first spring; 6111. limit groove; 6112. gear; 6113. rack; 6114. limit block; 6115. L The mold plate; 6116, the moving plate; 6117, the connecting block; 6118, the heating wire; 6119, the sleeve; 6120, the second spring; 6121, the extrusion rod; 62, the heat dissipation component; 621, the fixing frame; 622, the double-headed motor; 623, the screw rod; 624, the sleeve block; 625, the rotating rod; 626, the lifting block; 627, the second driving motor; 628, the second output shaft; 629, the heat dissipation blade; 6210, the limit plate; 6211, the slider; 6212, the baffle. DETAILED DESCRIPTION

[0033] In order to have a clearer understanding of the technical features, purposes and effects of the present invention, specific embodiments of the present invention are now described with reference to the accompanying drawings.

[0034] A preferred embodiment of the HTRB high temperature reverse bias test method provided by the present invention is as follows: Figures 1 to 9 As shown: A HTRB high temperature reverse bias test method, comprising the following steps:

[0035] S1, firstly put the semiconductor device that needs to be subjected to high temperature reverse bias test into a constant temperature box 1;

[0036] S2, then fix the semiconductor device to be tested by the clamping plate inside the constant temperature box 1;

[0037] S3, then, the heating wire inside the thermostat 1 is energized to increase the temperature inside the thermostat 1, and the rectangular frame inside the thermostat 1 rotates at a constant speed to uniformly heat the surface of the semiconductor device inside the thermostat 1, so that the semiconductor device in the thermostat 1 is heated evenly, and a high-temperature reverse bias test is achieved;

[0038] S4. Finally, the semiconductor device after the high-temperature reverse bias test is taken out, and the heat inside the constant temperature box 1 is dissipated through the heat dissipation blades.

[0039] The test assembly 61 inside the thermostat 1 includes a first drive motor 611 fixedly connected to the back of the thermostat 1, the output end of the first drive motor 611 is fixedly connected to a first output shaft 612, the outer wall of the first output shaft 612 is rotatably connected to the inner wall of the thermostat 1 through a bearing, the first output shaft 612 movably passes through the outer wall of the thermostat 1 and extends to the interior of the thermostat 1, the other end of the first output shaft 612 is fixedly connected to a rectangular frame 613, the inner wall of the rectangular frame 613 is slidably connected to a semiconductor device 614, the top of the rectangular frame 613 is movably connected to a ventilation plate 615 through a hinge, and the ventilation plate 615 is movably connected to the top of the rectangular frame 613. The bottom of the air plate 615 is fixedly connected with a clamping plate 616, and the bottom of the clamping plate 616 is slidably connected to the top of the semiconductor device 614. The top of the rectangular frame 613 is fixedly connected with a T-shaped side plate 617, and the inner wall of the T-shaped side plate 617 is slidably connected with a pull rod 618, and the outer wall of one end of the pull rod 618 is slidably connected to the inner wall of the side of the ventilation plate 615, and the other end of the pull rod 618 is fixedly connected with a pull block 619, and the side wall of the pull block 619 is fixedly connected with a first spring 6110, and the other end of the first spring 6110 is fixedly connected to the side wall of the T-shaped side plate 617. By setting the test component 61, when the semiconductor device needs to be tested, When the high temperature reverse bias test is performed on the semiconductor device 614, the operator can pull the pull block 619 to move the pull block 619 with the pull rod 618, so as to extend the first spring 6110, and then flip the ventilation plate 615 to place the semiconductor device 614 to be tested into the interior of the rectangular frame 613. After the semiconductor device 614 is placed, the operator flips the ventilation plate 615 to make the bottom of the pressing plate 616 fit with the surface of the semiconductor device 614, and then releases the pull block 619. Under the reaction of the first spring 6110, the pull rod 618 is reset, so that the pull rod 618 is inserted into the rectangular frame 613. The side inner wall of the frame 613 can realize resetting the rectangular frame 613, which is convenient for improving the stability of the semiconductor device 614 when it is fixed. When the semiconductor device 614 is subjected to a high-temperature reverse bias test, in order to make the semiconductor device 614 heated evenly during the high-temperature reverse bias test, the semiconductor device 614 needs to be turned over. At this time, the operator turns on the first drive motor 611 to cause the first output shaft 612 to rotate. During the rotation of the first output shaft 612, the rectangular frame 613 will be rotated with it, so that the semiconductor device 614 can be heated evenly during the high-temperature reverse bias test.

[0040] The test assembly 61 also includes a limit groove 6111 opened on the inner wall of the constant temperature box 1, a gear 6112 is fixedly sleeved on the outer wall of the first output shaft 612, a rack 6113 is meshed at the bottom of the gear 6112, a side wall of the rack 6113 is fixedly connected to a limit block 6114, the outer wall of the limit block 6114 is slidably connected to the inner wall of the limit groove 6111, an L-shaped plate 6115 is fixedly connected to the bottom of the rack 6113, the other end of the L-shaped plate 6115 is fixedly connected to a moving plate 6116, the top of the moving plate 6116 is fixedly connected to a connecting block 6117, the inner wall of the connecting block 6117 is fixedly connected to a heating wire 6118, and the heating wire 6118 is fixedly connected to the inner wall of the connecting block 6117. Below the rectangular frame 613, when the first output shaft 612 rotates, the gear 6112 will rotate with it, and after the gear 6112 rotates, it will mesh with the rack 6113. Under the action of the limiting groove 6111 and the limiting block 6114 to limit the rack 6113, after the gear 6112 rotates, the rack 6113 will move, and after the rack 6113 moves, it will move with the moving plate 6116 through the L-shaped plate 6115. The operator energizes the heating wire 6118 to cause the interior of the constant temperature box 1 to heat up, thereby achieving uniform heating of the semiconductor device 614, thereby performing a high-temperature reverse bias test.

[0041] The inner wall of the thermostatic box 1 is fixedly connected with a sleeve 6119, the inner wall of the sleeve 6119 is fixedly connected with a second spring 6120, the other end of the second spring 6120 is fixedly connected with an extrusion rod 6121, and the outer wall of one end of the extrusion rod 6121 is slidably connected to the inner wall of the sleeve 6119. During the movement of the movable plate 6116, its outer wall will squeeze the extrusion rod 6121, prompting the extrusion rod 6121 to compress the second spring 6120, thereby achieving a buffering effect on the movable plate 6116 during the movement.

[0042] A preferred embodiment of the HTRB high temperature reverse bias test method provided by the present invention is as follows: Figures 1 to 9As shown: a heat dissipation component 62 is also provided inside the thermostatic box 1. The heat dissipation component 62 includes a fixing frame 621 fixedly connected to the top of the inner wall of the thermostatic box 1. The inner wall of the fixing frame 621 is fixedly connected to a double-headed motor 622. The output end of the double-headed motor 622 is fixedly connected to a screw rod 623. The outer wall of the screw rod 623 is threadedly connected to a socket block 624. The bottom of the socket block 624 is movably connected to a rotating rod 625 through a hinge. The other end of the rotating rod 625 is movably connected to a lifting block 626 through a hinge. The side wall of the rotating rod 625 is fixedly connected to a second driving motor 627. The output end of the second driving motor 627 is fixedly connected to a second output shaft 628. The other end of the second output shaft 628 is fixedly connected to a heat dissipation blade 629. By providing the heat dissipation component 62, after the high-temperature reverse bias test of the semiconductor device 614 is completed, due to the interior of the thermostatic box 1 A large amount of heat will be generated inside the thermostat 1, so it is necessary to dissipate heat inside the thermostat 1. At this time, the operator turns on the second drive motor 627 to cause the second output shaft 628 to rotate. During the rotation of the second output shaft 628, the heat dissipation blades 629 will rotate, thereby facilitating the heat dissipation of the inside of the thermostat 1. During the heat dissipation process, the operator turns on the double-headed motor 622 to cause the screw rod 623 to rotate. During the rotation of the screw rod 623, the two socket blocks 624 will be prompted to move relative to each other. When the two socket blocks 624 are relatively close to each other, the rotating rod 625 will be prompted to rotate, and the lifting block 626 will be prompted to move downward. During the rotation of the rotating rod 625, the second drive motor 627 will be prompted to rotate accordingly, thereby adjusting the heat dissipation position of the heat dissipation blades 629 to the inside of the thermostat 1 to improve the heat dissipation effect.

[0043] The heat dissipation assembly 62 also includes a limit plate 6210 fixedly connected to the outer wall of the thermostatic box 1, the inner wall of the limit plate 6210 is slidably connected to a slider 6211, the bottom of the slider 6211 is fixedly connected to a baffle 6212, and the side wall of the baffle 6212 is slidably connected to the outer wall of the thermostatic box 1. Before dissipating heat inside the thermostatic box 1, the operator pulls the baffle 6212 to cause the slider 6211 on the top of the baffle 6212 to slide inside the limit plate 6210, so that the baffle 6212 no longer seals the vents on both sides of the thermostatic box 1, thereby realizing ventilation of the interior of the thermostatic box 1.

[0044] Furthermore, a support pad 2 is fixedly connected to the bottom of the thermostatic box 1. There are four support pads 2. The four support pads 2 are equal in size. The four support pads 2 are equidistantly fixedly connected to the four corners of the bottom of the thermostatic box 1. By setting four support pads 2, the thermostatic box 1 can be supported by the four support pads 2.

[0045] Furthermore, the front of the constant temperature box 1 is movably connected to a box door 3 via a hinge, the inner wall of the box door 3 is fixedly connected to a glass 4, and the front of the box door 3 is fixedly connected to a handle 5. By implementing the box door 3, it is convenient for an operator to open the box door 3, place the semiconductor device 614 into the constant temperature box 1 for a high-temperature reverse bias test, and observe the test conditions inside the constant temperature box 1 through the glass 4.

[0046] Furthermore, the outer wall of one end of the limit block 6114 is adapted to the inner wall of the limit groove 6111, and the other end of the limit block 6114 is fixedly connected to the side wall of the rack 6113. By setting the limit groove 6111 and the limit block 6114, the rack 6113 can be limited, thereby prompting the rack 6113 to move.

[0047] In addition, the heat dissipation blades 629 are divided into two groups, and the two groups of heat dissipation blades 629 are symmetrically distributed along the central plane of the lifting block 626. By providing two groups of heat dissipation blades 629, the heat dissipation effect inside the constant temperature box 1 can be improved.

[0048] Working principle: When it is necessary to perform a high temperature reverse bias test on the semiconductor device 614, the operator can pull the pull block 619 to cause the pull block 619 to move with the pull rod 618, causing the first spring 6110 to extend, and then flip the ventilation plate 615 to place the semiconductor device 614 to be tested into the interior of the rectangular frame 613. When the semiconductor device 614 is placed, the operator flips the ventilation plate 615 to cause the bottom of the clamping plate 616 to fit with the surface of the semiconductor device 614, and then releases the pull block 619. Under the reaction of the first spring 6110, the pull rod 618 is reset, causing the pull rod 618 is inserted into the side inner wall of the rectangular frame 613, so as to realize the reset of the rectangular frame 613, so as to improve the stability of the semiconductor device 614 when being fixed. When the semiconductor device 614 is subjected to a high temperature reverse bias test, in order to make the semiconductor device 614 evenly heated during the high temperature reverse bias test, the semiconductor device 614 needs to be turned over. At this time, the operator starts the first drive motor 611 to cause the first output shaft 612 to rotate. During the rotation of the first output shaft 612, the rectangular frame 613 is rotated with it, so as to facilitate the semiconductor device 614 to be evenly heated during the high temperature reverse bias test.

[0049] During the rotation of the first output shaft 612, the gear 6112 will rotate with it, and after the gear 6112 rotates, it will mesh with the rack 6113. Under the action of the limiting groove 6111 and the limiting block 6114 to limit the rack 6113, after the gear 6112 rotates, the rack 6113 will move, and after the rack 6113 moves, it will move with the moving plate 6116 through the L-shaped plate 6115. The operator energizes the heating wire 6118 to increase the temperature inside the constant temperature box 1, so as to evenly heat the semiconductor device 614, thereby performing a high-temperature reverse bias test;

[0050] During the movement of the moving plate 6116, its outer wall will squeeze the squeezing rod 6121, causing the squeezing rod 6121 to compress the second spring 6120, thereby achieving a buffering effect on the moving plate 6116 during the movement;

[0051] After the high-temperature reverse bias test of the semiconductor device 614 is completed, a large amount of heat will be generated inside the thermostat 1, so it is necessary to dissipate the heat inside the thermostat 1. Before dissipating the heat inside the thermostat 1, the operator pulls the baffle 6212 to cause the slider 6211 on the top of the baffle 6212 to slide inside the limit plate 6210, so that the baffle 6212 no longer seals the vents on both sides of the thermostat 1, thereby ventilating the interior of the thermostat 1. Subsequently, the operator turns on the second drive motor 627 to cause the second output shaft 628 to rotate. When the second output shaft 628 rotates During the process, the heat dissipation blades 629 will rotate, so as to facilitate the heat dissipation of the interior of the constant temperature box 1. During the heat dissipation process, the operator turns on the double-headed motor 622 to cause the screw rod 623 to rotate. During the rotation of the screw rod 623, the two socket blocks 624 will be prompted to move relative to each other. When the two socket blocks 624 are relatively close to each other, the rotating rod 625 will be prompted to rotate and the lifting block 626 will be prompted to move downward. During the rotation of the rotating rod 625, the second drive motor 627 will be prompted to rotate accordingly, thereby adjusting the heat dissipation position of the heat dissipation blades 629 to the interior of the constant temperature box 1 and improving the heat dissipation effect.

[0052] The above description is only an illustrative specific implementation mode of the present invention and is not intended to limit the scope of the present invention. Any equivalent changes and modifications made by any technician in the field without departing from the concept and principle of the present invention should fall within the scope of protection of the present invention. It should also be noted that the various components of the present invention are not limited to the above-mentioned overall application. The various technical features described in the specification of the present invention can be selected one by one or multiple ones can be selected and used in combination according to actual needs. Therefore, the present invention should naturally cover other combinations and specific applications related to this case.

Claims

1. A HTRB high temperature reverse bias test method, characterized in that: The following steps are involved: S1. First, place the semiconductor device to be subjected to a high temperature reverse bias test into a constant temperature box (1); S2, then fixing the semiconductor device to be tested by means of a clamping plate inside the constant temperature box (1); S3, then, by energizing the heating wire inside the thermostatic box (1), the temperature inside the thermostatic box (1) is raised, and by rotating the rectangular frame inside the thermostatic box (1) at a constant speed, the surface of the semiconductor device inside the thermostatic box (1) is evenly heated, so that the semiconductor device inside the thermostatic box (1) is evenly heated, thereby realizing high-temperature reverse bias testing; S4. Finally, the semiconductor device after the high-temperature reverse bias test is taken out, and the heat inside the constant temperature box (1) is dissipated through the heat dissipation blades.

2. The HTRB high temperature reverse bias test method according to claim 1, comprising a test assembly (61) arranged inside the constant temperature box (1), characterized in that: The test assembly (61) comprises a first drive motor (611) fixedly connected to the back of the thermostatic box (1); the output end of the first drive motor (611) is fixedly connected to a first output shaft (612); the outer wall of the first output shaft (612) is rotatably connected to the inner wall of the thermostatic box (1) via a bearing; the first output shaft (612) movably passes through the outer wall of the thermostatic box (1) and extends to the interior of the thermostatic box (1); the other end of the first output shaft (612) is fixedly connected to a rectangular frame (613); the inner wall of the rectangular frame (613) is slidably connected to a semiconductor device (614); the top of the rectangular frame (613) is movably connected to a ventilation plate (615) via a hinge. The bottom of the ventilation plate (615) is fixedly connected to a clamping plate (616), the bottom of the clamping plate (616) is slidably connected to the top of the semiconductor device (614), the top of the rectangular frame (613) is fixedly connected to a T-shaped side plate (617), the inner wall of the T-shaped side plate (617) is slidably connected to a pull rod (618), the outer wall of one end of the pull rod (618) is slidably connected to the inner wall of the side of the ventilation plate (615), the other end of the pull rod (618) is fixedly connected to a pull block (619), the side wall of the pull block (619) is fixedly connected to a first spring (6110), and the other end of the first spring (6110) is fixedly connected to the side wall of the T-shaped side plate (617).

3. A HTRB high temperature reverse bias test method according to claim 2, characterized in that: The test assembly (61) further comprises a limit groove (6111) provided on the inner wall of the thermostatic box (1); a gear (6112) is fixedly sleeved on the outer wall of the first output shaft (612); a rack (6113) is meshed at the bottom of the gear (6112); a side wall of the rack (6113) is fixedly connected to a limit block (6114); an outer wall of the limit block (6114) is slidably connected to the inner wall of the limit groove (6111); an L-shaped plate (6115) is fixedly connected to the bottom of the rack (6113); a movable plate (6116) is fixedly connected to the other end of the L-shaped plate (6115); a connecting block (6117) is fixedly connected to the top of the movable plate (6116); a heating wire (6118) is fixedly connected to the inner wall of the connecting block (6117); and the heating wire (6118) is located below the rectangular frame (613).

4. The HTRB high temperature reverse bias test method according to claim 1, characterized in that: The inner wall of the thermostatic box (1) is fixedly connected to a sleeve (6119), the inner wall of the sleeve (6119) is fixedly connected to a second spring (6120), the other end of the second spring (6120) is fixedly connected to an extrusion rod (6121), and the outer wall of one end of the extrusion rod (6121) is slidably connected to the inner wall of the sleeve (6119).

5. The HTRB high temperature reverse bias test method according to claim 1, characterized in that: A heat dissipation component (62) is also provided inside the thermostatic box (1), and the heat dissipation component (62) comprises a fixing frame (621) fixedly connected to the top of the inner wall of the thermostatic box (1); a double-headed motor (622) is fixedly connected to the inner wall of the fixing frame (621); a screw rod (623) is fixedly connected to the output end of the double-headed motor (622); a sleeve block (624) is threadedly connected to the outer wall of the screw rod (623); a rotating rod (625) is movably connected to the bottom of the sleeve block (624) via a hinge; the other end of the rotating rod (625) is movably connected to a lifting block (626) via a hinge; a second driving motor (627) is fixedly connected to the side wall of the rotating rod (625); a second output shaft (628) is fixedly connected to the output end of the second driving motor (627); and a heat dissipation blade (629) is fixedly connected to the other end of the second output shaft (628).

6. A HTRB high temperature reverse bias test method according to claim 5, characterized in that: The heat dissipation component (62) further comprises a limit plate (6210) fixedly connected to the outer wall of the thermostatic box (1); the inner wall of the limit plate (6210) is slidably connected to a slider (6211); the bottom of the slider (6211) is fixedly connected to a baffle (6212); and the side wall of the baffle (6212) is slidably connected to the outer wall of the thermostatic box (1).

7. The HTRB high temperature reverse bias test method according to claim 1, characterized in that: The bottom of the thermostatic box (1) is fixedly connected with a support pad (2), the number of the support pads (2) is four, the four support pads (2) are equal in size, and the four support pads (2) are equidistantly fixedly connected to the four corners of the bottom of the thermostatic box (1).

8. The HTRB high temperature reverse bias test method according to claim 1, characterized in that: The front of the thermostatic box (1) is movably connected to a box door (3) via a hinge, the inner wall of the box door (3) is fixedly connected to a glass (4), and the front of the box door (3) is fixedly connected to a handle (5).

9. The HTRB high temperature reverse bias test method according to claim 3, characterized in that: The outer wall of one end of the limit block (6114) is matched with the inner wall of the limit groove (6111), and the other end of the limit block (6114) is fixedly connected to the side wall of the rack (6113).

10. The HTRB high temperature reverse bias test method according to claim 5, characterized in that: The heat dissipation blades (629) are divided into two groups, and the two groups of heat dissipation blades (629) are symmetrically distributed along the central plane of the lifting block (626).

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