Method for measuring asymmetric transient voltage suppressor
By performing positioning and polarity testing of asymmetric transient suppression diodes, qualified samples were selected, which solved the problem of low test accuracy in the prior art, and achieved an efficient and accurate testing process, which was suitable for mass production.
Patent Information
- Application Number
- CN202411841081.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-12-13
- Publication Date
- 2025-03-18
AI Technical Summary
The prior art is difficult to accurately test the voltage tolerance of asymmetric transient suppression diodes, resulting in low test yield and cannot be widely used.
By performing positioning and polarity testing on multiple asymmetric transient suppression diodes, the performance test of the single-sided diodes of each diode is performed separately, and the initial screening sample and target sample are selected to ensure the accuracy of the test.
Multiple inspections of asymmetric transient suppression diodes are achieved, which improves shipment quality, reduces test costs, and enhances test accuracy. They are suitable for mass production and wide applications.
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Figure CN119644088A_ABST
Abstract
Description
Technical Field
[0001] The invention relates to the field of electronic component detection, and in particular to a method for measuring an asymmetric transient suppression diode. Background Art
[0002] With the development of electronic technology, transient voltage suppressors (TVS) are increasingly used in circuits. In order to ensure that the equipment can operate normally when facing transient voltage shocks and to ensure stable signal transmission at the antenna, signal interface and power interface, unconventional TVS diodes are derived, such as bidirectional asymmetric TVS diodes. The diodes are assembled by welding a conventional diode chip and a TVS chip together. In actual production, it is found that the test instrument is only effective for testing bidirectional TVS and single-phase TVS products. It is impossible to distinguish the polarity of the new TVS diode composed of conventional chips and TVS chips, and it is also impossible to test the voltage tolerance of conventional diode chips and TVS chips. During the test, because there is a reverse diode in both the forward and reverse directions, all the tested products show reverse, and the test yield is low. Since it is impossible to accurately test whether the bidirectional asymmetric TVS diode is qualified, it cannot be widely used.
[0003] Therefore, how to provide a measurement method for an asymmetric transient suppression diode with high test accuracy and low cost is a technical problem that urgently needs to be solved. Summary of the invention
[0004] In view of the above-mentioned shortcomings of the prior art, the present invention provides a method for measuring an asymmetric transient voltage suppressor diode to solve at least one of the above-mentioned technical problems.
[0005] In order to achieve the above-mentioned purpose and other related purposes, the technical solution provided by this application is as follows.
[0006] According to an embodiment provided by the present application, a method for measuring an asymmetric transient voltage suppressor diode is provided, comprising:
[0007] Providing a plurality of asymmetric transient suppression diodes and positioning the asymmetric transient suppression diodes;
[0008] Performing performance tests on the single-side diodes in each of the asymmetric transient suppression diodes, and screening the multiple asymmetric transient suppression diodes according to the test results to obtain preliminary screening samples;
[0009] The preliminary screening samples are located, and the performance of the single-side diode of each asymmetric transient suppression diode in the preliminary screening samples is tested, and then the preliminary screening samples are screened according to the test results to obtain target samples.
[0010] In one embodiment of the present application, a performance test is performed on each unilateral diode in the asymmetric transient suppression diode, and a plurality of the asymmetric transient suppression diodes are screened according to the test results to obtain a preliminary screening sample, including: performing electrical and polarity tests on the unidirectional diodes in the plurality of the asymmetric transient suppression diodes to obtain a first test result; performing electrical and polarity tests on the transient voltage suppression diodes in the plurality of the asymmetric transient suppression diodes based on the first test result to obtain a second test result; and screening the plurality of the asymmetric transient suppression diodes according to the first test result and the second test result to obtain the preliminary screening sample.
[0011] In one embodiment of the present application, electrical and polarity tests are performed on a transient voltage suppressor diode in a plurality of the asymmetric transient voltage suppressor diodes based on the first test result to obtain a second test result, including: if the first test result is unqualified, skipping the performance test of the transient voltage suppressor diode; if the first test result is qualified, performing electrical and polarity tests on the asymmetric transient voltage suppressor diode to obtain a second test result.
[0012] In one embodiment of the present application, a plurality of the asymmetric transient suppression diodes are screened according to the first test result and the second test result to obtain the preliminary screening sample, including: marking the asymmetric transient suppression diodes that fail the first test result or the second test result as unqualified as unqualified; and filtering out the asymmetric transient suppression diodes that have been marked as unqualified to obtain the preliminary screening sample.
[0013] In one embodiment of the present application, after the asymmetric transient suppression diode is positioned, it also includes: judging the polarity of multiple asymmetric transient suppression diodes according to preset polarity diagnosis conditions to obtain polarity test results; flipping the asymmetric transient suppression diodes whose polarity test results are in the opposite direction to ensure that the polarities of the multiple asymmetric transient suppression diodes are the same.
[0014] In one embodiment of the present application, before positioning the primary screening sample, it also includes: performing polarity and model marking processing on the primary screening sample to obtain a marked primary screening sample; performing an appearance test on the marked primary screening sample to obtain an appearance test result.
[0015] In one embodiment of the present application, a performance test is performed on a single-side diode of each asymmetric transient suppression diode in the preliminary screening sample, and then the preliminary screening sample is screened according to the test results to obtain a target sample, including: performing electrical and polarity tests on the unidirectional diodes in multiple asymmetric transient suppression diodes to obtain a third test result; performing electrical and polarity tests on the transient voltage suppression diodes in the asymmetric transient suppression diodes according to the third test result to obtain a fourth test result; and screening the asymmetric transient suppression diodes according to the appearance test result, the third test result and the fourth test result to obtain the target sample.
[0016] The present application provides a method for measuring an asymmetric transient suppression diode, the method comprising: providing a plurality of asymmetric transient suppression diodes, locating each transient suppression diode, performing two performance tests on the single-side diode in each asymmetric transient suppression diode, and screening the plurality of asymmetric transient suppression diodes after each performance test to obtain a target asymmetric transient suppression diode. The method for measuring an asymmetric transient suppression diode provided by the present application implements multiple inspections, effectively guarantees the quality of shipment, utilizes existing equipment, realizes the acquisition of test results during the test of an asymmetric transient suppression diode, and determines whether the asymmetric transient suppression diode is abnormal based on the test results, facilitates data analysis and tracking, and modifies the original test circuit to implement the test of an asymmetric transient suppression diode, reduces costs, and has a high test accuracy, can be mass-produced, and has a wide range of applications.
[0017] It is to be understood that the foregoing general description and the following detailed description are exemplary and explanatory only and are not restrictive of the invention. BRIEF DESCRIPTION OF THE DRAWINGS
[0018] The drawings herein are incorporated into the specification and constitute a part of the specification, showing embodiments consistent with the present invention, and together with the specification, are used to explain the principles of the present invention. Obviously, the drawings described below are only some embodiments of the present invention, and for those of ordinary skill in the art, other drawings can be obtained based on these drawings without creative work. In the drawings:
[0019] Figure 1 is a schematic diagram of multiple types of diodes in the prior art;
[0020] Figure 2 is a flow chart of a method for measuring an asymmetric transient suppression diode shown in an exemplary embodiment of the present invention;
[0021] Figure 3 FIG. 4 is a flowchart of a process for measuring an asymmetric transient suppression diode according to an exemplary embodiment of the present invention. DETAILED DESCRIPTION
[0022] The following will describe the embodiments of the present invention with reference to the accompanying drawings and preferred embodiments. Those skilled in the art can easily understand other advantages and effects of the present invention from the contents disclosed in this specification. The present invention can also be implemented or applied through other different specific embodiments, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present invention. It should be understood that the preferred embodiments are only for illustrating the present invention, not for limiting the scope of protection of the present invention.
[0023] It should be noted that the illustrations provided in the following embodiments are only schematic illustrations of the basic concept of the present invention, and thus the drawings only show components related to the present invention rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.
[0024] In the following description, numerous details are discussed to provide a more thorough explanation of the embodiments of the present invention. However, it is obvious to those skilled in the art that the embodiments of the present invention can be implemented without these specific details. In other embodiments, well-known structures and devices are shown in the form of block diagrams rather than in detail to avoid making the embodiments of the present invention difficult to understand.
[0025] With the development of electronic technology, transient voltage suppressors (TVS) are becoming more and more common in circuits. Figure 1 As shown in the figure, transient voltage suppressors include unidirectional TVS diodes, bidirectional TVS diodes and asymmetric bidirectional TVS diodes. In some special scenarios, it is necessary to protect the bidirectional voltage, so unconventional TVS diodes are derived, such as asymmetric bidirectional TVS diodes, such as Figure 1 As shown, the diode is assembled by welding a conventional unidirectional diode chip and a TVS chip together. In actual production, it is found that the test instrument is only effective for testing bidirectional TVS and single-phase TVS products. It cannot distinguish the polarity of the new TVS diode composed of a conventional unidirectional diode chip and a TVS chip, nor can it test the voltage tolerance of the conventional unidirectional diode chip and the TVS chip. During the test, because there is a reverse diode in both the forward and reverse directions, all the tested products show reverse direction, and the test yield is low. Since it is impossible to accurately test whether the bidirectional asymmetric TVS diode is qualified, it cannot be widely used.
[0026] To solve the above problems, Figure 2As shown, the present application provides a method for measuring an asymmetric transient voltage suppressor diode, which at least includes steps S210 to S230:
[0027] S210. Provide a plurality of asymmetric transient suppression diodes, and position the asymmetric transient suppression diodes.
[0028] like Figure 3 As shown, the asymmetric transient suppression diodes are placed into a preparation tray by front-end equipment or production staff, and multiple asymmetric transient suppression diodes are positioned in sequence.
[0029] In detail, after the asymmetric transient suppression diode is positioned, it also includes: performing polarity tests on multiple asymmetric transient suppression diodes according to preset polarity diagnostic conditions to obtain polarity test results; flipping asymmetric transient suppression diodes with polarity test results of opposite directions to ensure that the polarities of multiple asymmetric transient suppression diodes are the same. Specifically, the asymmetric transient suppression diodes are transmitted to a detection station, and polarity tests are performed on the materials of two diodes in the asymmetric transient suppression diodes according to preset material test conditions to obtain polarity test results, and multiple asymmetric transient suppression diodes are transmitted to a direction rotation station, and the asymmetric transient suppression diodes with polarity test results of opposite directions are flipped to ensure that the polarities of multiple asymmetric transient suppression diodes are the same.
[0030] S220, respectively perform performance tests on the single-side diode in each asymmetric transient suppression diode, and screen multiple asymmetric transient suppression diodes according to the test results to obtain a preliminary screening sample.
[0031] In detail, a performance test is performed on each unilateral diode in an asymmetric transient suppression diode, and a plurality of asymmetric transient suppression diodes are screened based on the test results to obtain a preliminary screening sample, including: performing electrical and polarity tests on the unidirectional diodes in the plurality of asymmetric transient suppression diodes to obtain a first test result; performing electrical and polarity tests on the transient voltage suppression diodes in the plurality of asymmetric transient suppression diodes based on the first test result to obtain a second test result; and screening the plurality of asymmetric transient suppression diodes based on the first test result and the second test result to obtain a preliminary screening sample. Specifically, a voltage test and a polarity test are performed on the unidirectional diodes in the plurality of asymmetric transient suppression diodes to obtain a first test result, the first test result is transmitted to a control device, a voltage test and a polarity test are performed on the transient voltage suppression diodes in the plurality of asymmetric transient suppression diodes based on the first test result to obtain a second test result, the second test result is transmitted to a control device, and a preliminary screening is performed on the detected asymmetric transient suppression diodes based on the two test results to obtain a preliminary screening sample. Figure 1 As shown, the unidirectional diode is Figure 1 A conventional diode is described.
[0032] In more detail, based on the first test result, the transient voltage suppression diodes in the plurality of asymmetric transient voltage suppression diodes are subjected to electrical and polarity tests to obtain a second test result, including: if the first test result is unqualified, the performance test of the transient voltage suppression diode is skipped; if the first test result is qualified, the asymmetric transient voltage suppression diode is subjected to electrical and polarity tests to obtain a second test result. Specifically, in order to save the test process, when the first test result received by the control device is unqualified, the related asymmetric transient voltage suppression diodes are subjected to unqualified compliance, and the test instrument is controlled to skip the performance test of the transient voltage suppression diodes generated by the unqualified, and when the second test result received by the control device is qualified, the transient voltage suppression diodes in the asymmetric transient voltage suppression diodes are subjected to voltage and polarity tests to obtain a second test result.
[0033] In more detail, multiple asymmetric transient suppression diodes are screened according to the first test result and the second test result to obtain a preliminary screening sample, including: marking the asymmetric transient suppression diodes that fail the first test result or the second test result as unqualified; filtering out the asymmetric transient suppression diodes that have been marked as unqualified to obtain the preliminary screening sample. Specifically, the control device receives the first test result and the second test result, and marks the asymmetric transient suppression diodes that fail the first test as unqualified unidirectional diodes, and marks the asymmetric transient suppression diodes that fail the second test as unqualified transient voltage suppression diodes, and screens multiple transient voltage suppression diodes to filter out the unqualified asymmetric transient suppression diodes to obtain the preliminary screening sample.
[0034] Specifically, after the initial screening sample is located, the method further includes: marking the polarity and model of the initial screening sample to obtain a marked initial screening sample; and performing an appearance test on the marked initial screening sample to obtain an appearance test result. Figure 3 As shown, after obtaining the preliminary screening samples, multiple asymmetric transient suppression diodes in the preliminary screening samples are marked with models and polarity standards, and the marked asymmetric transient suppression diodes are visually inspected to determine whether the marked asymmetric transient suppression diodes meet the standards, and obtain the appearance test results.
[0035] S230, locate the preliminary screening samples, and perform a performance test on the single-side diode of each asymmetric transient suppression diode in the preliminary screening samples, and then screen the preliminary screening samples according to the test results to obtain target samples.
[0036] In detail, a performance test is performed on the single-side diode of each asymmetric transient suppression diode in the preliminary screening sample, and then the preliminary screening sample is screened according to the test results to obtain a target sample, including: electrical and polarity tests are performed on the unidirectional diodes in multiple asymmetric transient suppression diodes to obtain a third test result; electrical and polarity tests are performed on the transient voltage suppression diodes in the asymmetric transient suppression diodes according to the third test result to obtain a fourth test result; the asymmetric transient suppression diodes are screened according to the appearance test result, the third test result and the fourth test result to obtain a target sample. Specifically, a voltage test and a polarity test are performed on the unidirectional diode of each asymmetric transient suppression diode in the preliminary screening sample to obtain a third test result, the third test result is transmitted to the control device, a voltage test and a polarity test are performed on the transient voltage suppression diodes in multiple asymmetric transient suppression diodes according to the third test result to obtain a fourth test result, the second test result is transmitted to the control device, and the asymmetric transient suppression diodes that fail the appearance test result, the third test result or the fourth test result are marked and sorted to obtain the target sample.
[0037] It should be noted that when the present application performs performance testing on an asymmetric transient suppression diode, the steps of performing electrical and polarity testing on the unidirectional diode in the asymmetric transient suppression diode and performing electrical and polarity testing on the transient voltage suppression diode in the asymmetric transient suppression diode can be adjusted according to actual conditions, and are not limited to the method provided in the present application of first performing a performance test on the unidirectional diode and then performing a performance test on the transient voltage suppression diode. It can also be the case that the performance test on the transient voltage suppression diode is performed first and then the performance test on the unidirectional diode is performed.
[0038] like Figure 3 As shown, after the second discharge is completed, the direction of the asymmetric transient suppression diode is adjusted again, and the directions of the multiple diodes are rotated clockwise by a preset rotation angle to facilitate transmission to subsequent packaging equipment.
[0039] The present application provides a method for measuring an asymmetric transient suppression diode, the method comprising: providing a plurality of asymmetric transient suppression diodes, and locating each transient diode, respectively performing a performance test on a single-side diode in each asymmetric transient suppression diode, and screening a plurality of asymmetric transient suppression diodes according to the test results to obtain a preliminary screening sample; locating the preliminary screening sample, and performing a performance test on a single-side diode of each asymmetric transient suppression diode in the preliminary screening sample, and then screening the preliminary screening sample according to the test results to obtain a target asymmetric transient suppression diode. The method for measuring an asymmetric transient suppression diode provided by the present application realizes multiple inspections, effectively guarantees the quality of shipment, and can realize data collection, facilitate data analysis, tracking, automatic assembly line testing, and packaging, and uses existing equipment to modify the test circuit to realize the test of the asymmetric transient suppression diode, reduce costs, and have high test accuracy, can be mass-produced, and have a wide range of applications.
[0040] The above embodiments are merely illustrative of the principles and effects of the present invention, and are not intended to limit the present invention. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present invention. Therefore, all equivalent modifications or changes made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.
Claims
1. A method for measuring an asymmetric transient voltage suppressor diode, characterized in that: include: Providing a plurality of asymmetric transient suppression diodes and positioning the asymmetric transient suppression diodes; Performing performance tests on the single-side diodes in each of the asymmetric transient suppression diodes respectively, and screening the multiple asymmetric transient suppression diodes according to the test results to obtain preliminary screening samples; The preliminary screening samples are located, and the performance of the single-side diode of each asymmetric transient suppression diode in the preliminary screening samples is tested, and then the preliminary screening samples are screened according to the test results to obtain target samples.
2. The method for measuring an asymmetric transient voltage suppressor diode according to claim 1, characterized in that: The single-side diode in each asymmetric transient suppression diode is subjected to a performance test respectively, and a plurality of asymmetric transient suppression diodes are screened according to the test results to obtain a preliminary screening sample, including: Performing electrical and polarity tests on the unidirectional diodes in the plurality of asymmetric transient suppression diodes to obtain a first test result; Based on the first test result, electrical and polarity tests are performed on the transient voltage suppression diodes in the plurality of asymmetric transient voltage suppression diodes to obtain a second test result; A plurality of the asymmetric transient suppression diodes are screened according to the first test result and the second test result to obtain the primary screening sample.
3. The method for measuring an asymmetric transient voltage suppressor diode according to claim 2, characterized in that: Based on the first test result, electrical and polarity tests are performed on the transient voltage suppression diodes in the plurality of asymmetric transient voltage suppression diodes to obtain a second test result, including: If the first test result is unqualified, skipping the performance test of the transient voltage suppression diode; If the first test result is qualified, electrical and polarity tests are performed on the asymmetric transient suppression diode to obtain a second test result.
4. The method for measuring an asymmetric transient voltage suppressor diode according to claim 2, characterized in that: Screening a plurality of the asymmetric transient suppression diodes according to the first test result and the second test result to obtain the primary screening sample includes: Marking the corresponding asymmetric transient suppression diode for which the first test result fails or the second test result fails as unqualified; The asymmetric transient suppression diodes marked as unqualified are filtered out to obtain the primary screening sample.
5. The method for measuring an asymmetric transient voltage suppressor diode according to claim 1, characterized in that: After positioning the asymmetric transient suppression diode, the method further comprises: Performing polarity tests on the asymmetric transient suppression diodes according to preset polarity diagnostic conditions to obtain polarity test results; The asymmetric transient suppression diodes with the polarity test results being in the opposite direction are flipped to ensure that the polarities of the plurality of asymmetric transient suppression diodes are the same.
6. The method for measuring an asymmetric transient voltage suppressor diode according to claim 1, characterized in that: After the initial screening sample is located, it also includes: Performing polarity and model labeling processing on the primary screening samples to obtain labeled primary screening samples; Perform an appearance test on the marked primary screening sample to obtain an appearance test result.
7. The method for measuring an asymmetric transient voltage suppressor diode according to claim 6, characterized in that: Performing a performance test on a single-side diode of each asymmetric transient suppression diode in the preliminary screening sample, and then screening the preliminary screening sample according to the test result to obtain a target sample, including: Performing electrical and polarity tests on the unidirectional diodes in the plurality of asymmetric transient suppression diodes to obtain a third test result; Performing electrical and polarity tests on the transient voltage suppression diode in the asymmetric transient voltage suppression diode according to the third test result to obtain a fourth test result; The asymmetric transient suppression diode is screened according to the appearance test result, the third test result, and the fourth test result to obtain the target sample.