Focusing ring, bearing device and process chamber

Abstract

The invention discloses a focusing ring, a bearing device and a process chamber, and relates to the field of semiconductors. The focusing ring comprises a focusing ring main body, the at least one first air hole is formed in one end of the focusing ring main body, and the at least one first air hole is used for discharging air in the axial direction of the focusing ring main body; the at least one second air hole is formed in the inner edge of the focusing ring main body, and the at least one second air hole is used for discharging air towards the inner side of a space defined by the focusing ring main body in the radial direction of the focusing ring main body; and the air flow channel is arranged in the focusing ring main body, and the air flow channel is respectively communicated with the first air hole and the second air hole. The bearing device comprises the focusing ring. The process chamber comprises the bearing device. The problem that the focusing ring is etched at least can be solved.

Description

Technical Field

[0001] The present application belongs to the field of semiconductor technology, and specifically relates to a focusing ring, a carrying device and a process chamber. Background Art

[0002] Plasma etcher is a crucial equipment in the modern integrated circuit manufacturing process. The wafer electrostatic chuck (ElectroStatic Chuck, or ESC), focus ring (Focus Ring, or FR) and base ring (Base Ring, or BR) are important components, which play a role in protecting the process stability. Generally, the role of the focus ring is to fix the wafer, protect the edge of the wafer and the surface of the wafer electrostatic adsorption chuck from being etched. The role of the base ring is to carry the focus ring and protect the wafer electrostatic adsorption chuck.

[0003] The focus ring and base ring are made of sintered ceramic materials. Although ceramic materials have good corrosion resistance, for metal etching such as Al etching, the process and cleaning process use a large amount of Cl2 and BCl3 gases. Coupled with the high bias voltage of the lower electrode, the plasma generated will still cause chemical and physical etching to the above components. On the one hand, the thickness of the focus ring is thinned after etching, and the thinned focus ring has a great impact on the etching rate of the wafer edge and needs to be replaced regularly; on the other hand, the fallen ceramic material particles are difficult to eliminate by adjusting the plasma etching process or chemical atmosphere, and the reaction chamber needs to be cleaned. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a focusing ring, a supporting device and a process chamber, which can at least solve the problem of the focusing ring being etched.

[0005] In order to solve the above technical problems, this application is implemented as follows:

[0006] The present application provides a focusing ring, which is applied to a process chamber of a semiconductor process equipment. The focusing ring includes:

[0007] Focus ring body;

[0008] At least one first air hole is provided at one end of the focusing ring body, and the at least one first air hole is used for exhausting air along the axial direction of the focusing ring body;

[0009] At least one second air hole is provided at the inner edge of the focusing ring body, and the at least one second air hole is used to discharge air inwardly of the space surrounded by the focusing ring body along the radial direction of the focusing ring body;

[0010] An air flow channel is disposed in the focusing ring body, and the air flow channel is communicated with the first air hole and the second air hole respectively.

[0011] The embodiment of the present application also provides a bearing device, including a base and the above-mentioned focusing ring;

[0012] The focusing ring is sleeved on the periphery of the base.

[0013] The embodiment of the present application also provides a process chamber, including the above-mentioned carrying device;

[0014] The carrying device is arranged in the inner cavity of the process chamber.

[0015] In an embodiment of the present application, gas can be delivered to at least one first air hole through the air flow channel, and gas can be blown out through the first air hole to dilute the plasma near the focusing ring body in the axial direction, thereby reducing the etching effect of the plasma on the axial end face of the focusing ring body and extending its service life; gas can also be delivered to at least one second air hole through the air flow channel, and gas can be blown out through the second air hole to blow radially into the space surrounded by the focusing ring body, thereby effectively blocking the plasma from entering the space surrounded by the focusing ring body, reducing the plasma etching of the radial end face of the focusing ring body, and thereby extending the service life of the entire focusing ring; at the same time, since the etching of the focusing ring body is reduced, the particulate contaminants generated during the etching process can be reduced accordingly, thereby improving the process stability of plasma etching.

[0016] In addition, when the gas flows through the air flow channel and at least one first air hole and at least one second air hole, it can absorb at least part of the heat of the focusing ring body, thereby cooling the focusing ring body. When the focusing ring is arranged on the periphery of the base, heat transfer can be generated between the focusing ring and the outer edge area of ​​the base. In this way, the outer edge area of ​​the base surrounded by the focusing ring can be cooled, thereby effectively alleviating the problem of the outer edge temperature of the base being higher than the center temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 It is a structural schematic diagram of an electrostatic chuck, a focusing ring and a base ring in the related art;

[0018] Figure 2 It is a schematic diagram of temperature distribution of an electrostatic chuck in the related art;

[0019] Figure 3 It is a schematic structural diagram of the focusing ring in the assembled state disclosed in the embodiment of the present application;

[0020] Figure 4 It is a schematic diagram of the structure of the focus ring disclosed in the embodiment of the present application in a disassembled state;

[0021] Figure 5 It is a schematic diagram of the structure of the first ring body disclosed in the embodiment of the present application;

[0022] Figure 6 It is a partial schematic diagram of the first ring body disclosed in the embodiment of the present application;

[0023] Figure 7 It is a schematic diagram of the structure of the second ring body disclosed in the embodiment of the present application;

[0024] Figure 8 It is a partial schematic diagram of the second ring body disclosed in the embodiment of the present application;

[0025] Fig. 9 A first assembly schematic diagram of the first ring body and the second ring body disclosed in an embodiment of the present application;

[0026] Fig.10 A first partial schematic diagram of the assembly of the first ring body and the second ring body disclosed in the embodiment of the present application;

[0027] Fig.11 A second assembly schematic diagram of the first ring body and the second ring body disclosed in the embodiment of the present application;

[0028] Fig.12 A second partial schematic diagram of the assembly of the first ring body and the second ring body disclosed in the embodiment of the present application;

[0029] Fig.13 This is a schematic diagram of the structure of gas transmission from the helium channel of the base disclosed in the embodiment of the present application;

[0030] Fig.14 This is a schematic diagram of a structure in which a separate channel for gas transmission is provided in an embodiment of the present application;

[0031] Fig.15 Schematic diagram of the temperature distribution of the base in the embodiment of the present application.

[0032] Description of reference numerals:

[0033] 01-Electrostatic chuck; 02-Base ring; 03-Focus ring;

[0034] 100-base; 110-airway;

[0035] 200-focus ring;

[0036] 210-first ring body; 211-first air hole; 212-second air hole; 213-first expansion structure; 214-second expansion structure;

[0037] 220 - second ring body; 221 - air flow channel; 2211 - annular groove; 2212 - linear channel. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0039] The terms "first", "second", etc. in the specification and claims of the present application are used to distinguish similar objects, and are not used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable under appropriate circumstances, so that the embodiments of the present application can be implemented in an order other than those illustrated or described here, and the objects distinguished by "first", "second", etc. are generally of one type, and the number of objects is not limited. For example, the first object can be one or more. In addition, "and / or" in the specification and claims represents at least one of the connected objects, and the character " / " generally indicates that the objects associated with each other are in an "or" relationship.

[0040] The embodiments of the present application are described in detail below through specific embodiments and their application scenarios in conjunction with the accompanying drawings.

[0041] A bearing device is provided in the related art, such as Figure 1 As shown, the bearing device includes an electrostatic chuck 01, a base ring 02 and a focus ring 03, wherein the electrostatic chuck 01 is a truncated table with a first step, the base ring 02 is a circular ring with an anti-first step, and the focus ring 03 is a circular ring with a first step. Before use, the electrostatic chuck 01 is first leveled and fixed, and then the base ring 02 is pressed on the horizontal step surface of the electrostatic chuck 01 by its own gravity, and finally the focus ring 03 is pressed on the surface of the base ring 02 by its own gravity.

[0042] During the plasma etching process, the plasma etches the step surface of the focusing ring 03, causing the step surface to be lowered, thereby increasing the etching rate at the edge of the wafer. The plasma can also diffuse into the gap between the wafer and the focusing ring 03 and enter between the side surfaces of the electrostatic chuck 01 and the base ring 02, thereby etching the side surfaces of the electrostatic chuck 01 and the base ring 02, causing damage.

[0043] In addition, the focus ring 03 and the base ring 02 are both made of ceramic or quartz materials. The part of the electrostatic chuck 01 that contacts the wafer is made of ceramic material, which has poor thermal conductivity. As a result, the use of the focus ring 03 and the base ring 02 has an adverse effect on the side heat dissipation of the electrostatic chuck 01. In addition, the upper surface of the electrostatic chuck 01 is also made of ceramic material. Therefore, the edge temperature of the electrostatic chuck 01 will be higher than the center temperature. Figure 2 Taking metal etching such as Al etching as an example, at the least, the etching rate at the edge of the wafer is inconsistent with the etching rate at the center of the wafer. At the worst, the temperature is too high, causing the photoresist to melt. The melted photoresist is not enough to block, resulting in damage to the aluminum surface.

[0044] Based on the above situation, the embodiment of the present application discloses a focusing ring, which is applied to a process chamber of a semiconductor process equipment. Figures 3 to 15 The disclosed focusing ring includes a focusing ring body 200, which can be used to limit the wafer and protect the edge of the wafer from being etched.

[0045] Exemplarily, the focusing ring body 200 may be a circular ring structure to adapt to the shape of a wafer.

[0046] In order to reduce the etching of the axial end surface of the focus ring body 200 by the plasma, at least one first air hole 211 may be provided at one end of the focus ring body 200, and the at least one first air hole 211 is used to discharge air along the axial direction of the focus ring body 200. It should be noted here that one end of the focus ring body 200 is the end close to the wafer along its own axial direction, and the plasma moves toward the wafer during the process. In this case, the gas discharge direction of the at least one first air hole 211 is opposite to the moving direction of the plasma, so that a certain blowing effect can be played on the plasma, so that a part of the plasma cannot contact the focus ring body 200, thereby reducing the etching of the focus ring body 200.

[0047] The above-mentioned axial gas outlet along the focusing ring body 200 can be understood as that the angle between the direction in which the gas flows out from the first air hole 211 and the axial direction of the focusing ring body 200 is 0°. Of course, the angle may not be 0°, but may be within a certain angle range. In this case, it can be regarded as the axial gas outlet along the focusing ring body 200.

[0048] In some other embodiments, the gas outlet direction of the first air hole 211 can also be inclined with respect to the axial direction of the focusing ring body 200 . In this form, the gas blown out of the first air hole 211 also has a certain blowing effect on the plasma to reduce the etching of the focusing ring body 200 by the plasma.

[0049] Optionally, the number of the first air holes 211 may be one or more. When there are multiple first air holes 211, the multiple first air holes 211 may be arranged circumferentially around the focusing ring body 200, such as being evenly arranged, etc., so as to increase the gas outlet area, improve the blowing and dilution effects on the plasma, and further alleviate the etching of the end face of the focusing ring body 200 by the plasma.

[0050] In addition, the plurality of first air holes 211 can be centrally symmetrically distributed with the geometric center of the focus ring body 200 as the symmetry center, that is, the plurality of first air holes 211 are evenly distributed in the circumferential direction of the focus ring body 200. Through this arrangement, the gas outlets of the plurality of first air holes 211 can be made more uniform, and the uneven distribution of gas in different regions can be effectively avoided to affect the blocking and dilution effect on the plasma, and the blocking and dilution effect of the gas on the plasma can be improved to a certain extent, thereby improving the protection effect on the focus ring body 200.

[0051] In order to reduce the plasma etching on the radial end surface of the focusing ring body 200, at least one second air hole 212 is opened at the inner edge of the focusing ring body 200, and the at least one second air hole 212 is used to discharge gas along the radial direction of the focusing ring body 200 toward the inside of the space surrounded by the focusing ring body 200.

[0052] It should be noted that, when the focus ring is sleeved on the periphery of the base 100, the radial gas outlet along the focus ring body 200 can be understood as the gas blowing from the inner edge of the focus ring body 200 to the outer edge of the base 100. In addition, there may be a certain gap between the focus ring and the base 100. In this case, when the gas blows from the inner edge of the focus ring body 200 to the outer edge of the base 100, it will play a gas sealing role in the gap to prevent the plasma from contacting the inner edge surface of the focus ring body 200 and the outer edge surface of the base 100, thereby delaying the etching of the inner edge surface of the focus ring body 200 and the outer edge surface of the base 100. In addition, when the at least one second air hole 212 blows gas into the gap, the gas can also contact the outer edge surface of the base 100, thereby having a certain cooling effect on the base 100.

[0053] Optionally, the second air hole 212 can be one or more. When there are multiple second air holes 212, the multiple second air holes 212 can be arranged circumferentially around the focusing ring body 200, such as being evenly arranged, so as to increase the gas outlet area, improve the blowing and blocking effects on the plasma, and further alleviate the plasma etching of the inner edge surface of the focusing ring body 200.

[0054] In addition, the plurality of second air holes 212 can be centrally symmetrically distributed with the geometric center of the focus ring body 200 as the symmetry center, that is, the plurality of second air holes 212 are evenly distributed in the circumferential direction of the focus ring body 200. Through this arrangement, the gas outlets of the plurality of second air holes 212 can be made more uniform, and the uneven distribution of gas in different regions can be effectively avoided to affect the blocking effect on plasma, and the blocking effect of gas on plasma can be improved to a certain extent, thereby improving the protection effect on the focus ring and the base 100.

[0055] In order to achieve gas transmission, a gas flow channel 221 may be further provided in the focusing ring body 200, and the gas flow channel 221 is respectively connected to the at least one first gas hole 211 and the at least one second gas hole 212. Based on this, the gas flow channel 221 may be used to transmit gas to the at least one first gas hole 211 and the at least one second gas hole 212, so that the gas may dilute and hinder the plasma, and may also cool it down.

[0056] Exemplarily, there can be only one air flow channel 221, and at least one first air hole 211 and at least one second air hole 212 can share one air flow channel 221; of course, there can also be multiple air flow channels 221, and each air flow channel 221 can be connected to one of the first air holes 211 or one of the second air holes 212.

[0057] In the embodiment of the present application, gas can be delivered to at least one first air hole 211 through the air flow channel 221, and gas can be blown out through the first air hole 211 to dilute the plasma near the focusing ring body 200 in the axial direction, thereby reducing the etching effect of the plasma on the axial end surface of the focusing ring body 200 and extending its service life; gas can also be delivered to at least one second air hole 212 through the air flow channel 221, and gas can be blown out through the second air hole 212 to blow gas radially toward the space surrounded by the focusing ring body 200, thereby effectively blocking the plasma from entering the space surrounded by the focusing ring body 200, reducing the plasma etching of the radial end surface of the focusing ring body 200, and extending the service life of the focusing ring; at the same time, since the etching of the focusing ring is reduced, the particulate contaminants generated during the etching process can be reduced accordingly, thereby improving the process stability of plasma etching.

[0058] In addition, when the gas flows through the air flow channel 221 and at least one first air hole 211 and at least one second air hole 212, it can absorb at least part of the heat of the focusing ring body 200, thereby cooling the focusing ring body 200. When the focusing ring is arranged on the periphery of the base 100, heat transfer can be generated between the focusing ring body 200 and the outer edge area of ​​the base 100. In this way, the outer edge area of ​​the base 100 surrounded by the focusing ring body 200 can be cooled, thereby effectively alleviating the problem that the outer edge temperature of the base 100 is higher than the center temperature.

[0059] refer to Figure 3 and Figure 4 In some embodiments, the focus ring body 200 may include a first ring body 210 and a second ring body 220, and the first ring body 210 and the second ring body 220 are matched and connected in the axial direction of the focus ring body 200. The first ring body 210 can limit the wafer and protect the edge of the wafer and the edge surface of the base 100 from being etched; the second ring body 220 can be used to support the first ring body 210. During actual installation, the second ring body 220 is firstly sleeved on the periphery of the base 100 and supported by the base 100, and the first ring body 210 is sleeved on the periphery of the base 100 and supported by the second ring body 220, that is, the first ring body 210 is close to the bearing surface, and the second ring body 220 is far away from the bearing surface. Exemplarily, the first ring body 210 can be a circular ring, and the second ring body 220 can also be a circular ring.

[0060] In the embodiment of the present application, the first ring body 210 and the second ring body 220 may be fixedly connected to ensure the strength and stability of the entire focusing ring body 200 .

[0061] In some embodiments, the first ring body 210 and the second ring body 220 can be fixedly connected by heat pressing and bonding. Exemplarily, the first ring body 210 and the second ring body 220 can be formed into an integrated focus ring body 200 by heat pressing using a heat pressing device and a bonding material to ensure the strength stability of the focus ring body 200. Of course, other fixed connection methods can also be used, which are not specifically limited here.

[0062] In other embodiments, the focus ring body 200 may also be an integrally formed structure. For example, the focus ring body 200 may be manufactured by casting, forging, or other processes to improve manufacturing efficiency.

[0063] refer to Figure 3 and Figure 4In the embodiment of the present application, at least one first air hole 211 and at least one second air hole 212 are respectively provided in the first ring body 210. Exemplarily, at least one first air hole 211 and at least one second air hole 212 can be formed at one time during the manufacturing process of the first ring body 210, so as to improve the manufacturing efficiency; of course, the substrate of the first ring body 210 can also be manufactured first, and then at least one first air hole 211 and at least one second air hole 212 are formed on the substrate by machining, forging and other processes.

[0064] In some embodiments, each first air hole 211 may penetrate the first ring body 210 along the axial direction of the focus ring body 200, and each second air hole 212 may penetrate the inner annular surface of the first ring body 210 along the radial direction of the focus ring body 200. With this arrangement, gas may be discharged in the axial direction through each first air hole 211, and gas may be discharged in the radial direction through each second air hole 212, so that the plasma may be blocked by airflow in the axial and radial directions, respectively, so as to effectively alleviate the problem of plasma etching damage to the focus ring body 200 in the axial and radial directions.

[0065] Exemplarily, the first ring body 210 may be a circular ring, a circle of material is removed from the connection between the inner edge surface and one axial end surface to form a circle of step structure, and the circle of step structure is arranged around the periphery of the wafer and the bearing surface.

[0066] Furthermore, in the radial direction, at least one first air hole 211 is respectively axially penetrated through the first ring body 210 in the region deviating from the step structure (i.e., the first air hole 211 is provided in the region where the step structure is not provided). When there are multiple first air holes 211, the multiple first air holes 211 are arranged at intervals around the circumference of the first ring body 210, so that the area of ​​the gas outlet region can be expanded by the multiple first air holes 211 arranged in this manner, so as to block more plasma and increase the dilution degree of the plasma, thereby reducing the etching damage to the focus ring body 200 caused by the plasma reaching the surface of the focus ring body 200.

[0067] In the axial direction, at least one second air hole 212 is respectively opened on the inner edge surface of the first ring body 210 in an area deviating from the step structure (that is, the second air hole 212 is opened in an area where the step structure is not set). When there are multiple second air holes 212, the multiple second air holes 212 are arranged at intervals along the circumference of the focus ring body 200. In this way, the gas outlet area can be expanded by the multiple second air holes 212 arranged in this form, so that the gas can better block the plasma in the gap between the focus ring body 200 and the base 100, so as to alleviate the problem of etching damage caused by the contact between the plasma and the inner edge surface of the focus ring body 200 and the outer edge surface of the base 100.

[0068] Correspondingly, the second ring body 220 can also be a circular ring, and a circle of material is removed from the connection between its inner edge surface and the other axial end to form a circle of step structure. The circle of step structure is arranged around the periphery of the base 100 and cooperates with the annular step structure at the periphery of the base 100. In this way, the installation stability between the second ring body 220 and the base 100 can be improved, and at least part of the base 100 can be covered by the second ring body 220 to prevent plasma from causing etching damage to the base 100.

[0069] In the embodiment of the present application, the air flow channel 221 is provided in the second ring body 220. In some embodiments, the air outlet end of the air inlet channel passes through the end surface of the second ring body 220 facing the first ring body 210.

[0070] Considering that the first ring body 210 and the second ring body 220 are axially matched and connected with each other along the focusing ring body 200, and the first air hole 211 and the second air hole 212 are respectively opened in the first ring body 210, in order to respectively transport gas to the first air hole 211 and the second air hole 212 through the air flow channel 221, one end of the air flow channel 221 is opened on the end surface of the second ring body 220 facing the first ring body 210. This opening method can not only ensure that the air flow channel 221 can transport gas to the first air hole 211 and the second air hole 212, but also achieve sealing through the matching connection between the first ring body 210 and the second ring body 220.

[0071] For example, the other end of the airflow channel 221 may be provided on the inner edge surface of the second ring body 220 and located in an area deviated from a circle of step structures in the axial direction, so that the airflow channel 221 can be connected with other gas delivery channels.

[0072] In some embodiments, the gas outlet end of the airflow channel 221 is respectively arranged corresponding to at least one first air hole 211 . Specifically, each first air hole 211 is opposite to the airflow channel 221 , so that gas can be transported to each first air hole 211 through the airflow channel 221 .

[0073] Further, there are multiple first air holes 211 and multiple second air holes 212, and the multiple second air holes 212 are arranged in a one-to-one correspondence with the multiple first air holes 211. Each second air hole 212 is located inside the corresponding first air hole 211, and the multiple second air holes 212 are connected to the air flow channel 221 through the corresponding first air holes 211. Based on this arrangement, the air flow channel 221 is directly arranged in correspondence with the multiple first air holes 211, so that the gas first enters the multiple first air holes 211 from the air flow channel 221; then, the gas is transported to the corresponding second air hole 212 through each first air hole 211, that is, the air flow channel 221 indirectly transports gas to the multiple second air holes 212 through the multiple first air holes 211.

[0074] Based on the above configuration, since each second air hole 212 does not need to be directly connected to the air flow channel 221 , the opening path of each second air hole 212 can be shortened, thereby reducing the structural complexity of the first ring body 210 .

[0075] Exemplarily, each first air hole 211 extends axially along the first ring body 210 and axially penetrates the first ring body 210; each second air hole 212 extends radially along the first ring body 210, and one end of the second air hole 212 penetrates the inner annular surface of the first ring body 210, and the other end of the second air hole 212 is connected to the corresponding first air hole 211, so as to facilitate air supply to the corresponding second air hole 212 through the first air hole 211.

[0076] In order to further increase the area of ​​the axial air outlet coverage region, the air outlet end of the first air hole 211 may be provided with a first expansion structure 213, such as Figure 6 Specifically, along the axial gas outlet direction, the cross-sectional area of ​​the first expansion structure 213 gradually increases, so as to expand the gas outlet area of ​​the gas outlet end of each first gas hole 211, thereby improving the blocking effect on plasma, so that more plasma cannot contact the focus ring body 200, thereby reducing the etching damage of the focus ring body 200 by the plasma. Exemplarily, the first expansion structure 213 can be in the shape of a trumpet, such as a shape of a longitudinal section can be a trapezoid, a triangle, etc., and the specific shape is not limited.

[0077] Similarly, in order to further increase the area of ​​the radial outlet coverage region, the outlet end of the second air hole 212 may be provided with a second expansion structure 214, such as Figure 6 As shown. Specifically, along the radial gas outlet direction, the cross-sectional area of ​​the second expansion structure 214 gradually increases, so as to expand the gas outlet area of ​​each second gas hole 212, thereby improving the blocking effect on plasma, so that more plasma cannot contact the focus ring body 200, thereby reducing the plasma etching damage to the focus ring body 200 and the base 100, and in addition, the contact area between the gas and the base 100 can be increased, thereby improving the heat dissipation efficiency of the base 100. Exemplarily, the second expansion structure 214 can be in the shape of a trumpet, such as a trapezoidal, triangular, etc., and the specific shape is not limited.

[0078] In some embodiments, the air flow channel 221 may include a first channel and a second channel, wherein the first channel and the second channel are interconnected, and the first channel is respectively connected to the plurality of first air holes 211. Based on this, the gas can be transported to the plurality of first air holes 211 via the first channel and the second channel, and the plurality of first air holes 211 are respectively transmitted to the corresponding second air holes 212, so that the gas can be discharged in both the axial direction and the radial direction.

[0079] In order to realize the transmission of gas to the multiple first air holes 211 respectively, one of the first channel and the second channel can be an annular groove 2211, and the other can be a linear channel 2212. The annular groove 2211 is opened on the end surface of the second ring body 220 facing the first ring body 210, and the first ring body 210 is covered with a notch of the annular groove 2211 to form an annular channel. The linear channel 2212 extends radially and is connected to the annular channel. The multiple first air holes 211 are connected to the annular channels respectively. Through this arrangement, the linear channel 2212 can transmit gas into the annular channel, and the annular channel can transmit gas to the multiple first air holes 211 respectively, so as to transmit gas to the multiple first air holes 211 at the same time. At the same time, the multiple first air holes 211 can transmit gas to the corresponding second air holes 212 respectively, so that gas can be discharged axially through the multiple first air holes 211 and radially through the multiple second air holes 212.

[0080] In other embodiments, the air flow channel 221 may also include multiple branch channels, each branch channel is connected to the first air hole 211 accordingly, so that gas can be transmitted to the multiple first air holes 211 through the multiple branch channels respectively, so that gas can be discharged axially through the multiple first air holes 211 and radially through the multiple second air holes 212 respectively.

[0081] In some embodiments, the gas flow channel 221 may include a plurality of linear channels 2212, which are centrally symmetrically distributed with the geometric center of the focusing ring body 200 as the symmetry center, and are all connected to the annular channel. Through this arrangement, the plurality of linear channels 2212 can be evenly distributed in the second ring body 220, so as to evenly transmit gas into the annular channel.

[0082] Furthermore, the connection point between each linear channel 2212 and the annular channel is located in the middle of the connection points between two adjacent first air holes 211 and the annular channel. This arrangement can make the gas pressure more stable after flowing into the annular channel, and ensure the uniformity of the outflowing gas flow.

[0083] Based on the above-mentioned focusing ring, an embodiment of the present application further discloses a supporting device, and the disclosed supporting device includes a base 100 and the above-mentioned focusing ring, wherein the focusing ring is sleeved on the periphery of the base 100 .

[0084] The base 100 is used to support the wafer. Specifically, the base 100 may include a supporting surface, and the wafer can be placed on the supporting surface to facilitate supporting the wafer; the focusing ring can be used to limit the wafer and protect the edge of the wafer from being etched, and the focusing ring can also protect the surface of the base 100 from being etched.

[0085] Exemplarily, an annular step structure may be provided at the edge of one end of the base 100 close to the bearing surface, and the focusing ring body 200 is sleeved on the periphery of the end of the base 100 close to the bearing surface and is supported by the annular step structure. The annular step structure may be shielded by the focusing ring body 200 to prevent plasma from etching the surface of the annular step structure.

[0086] By providing at least one first air hole 211 in the focus ring body 200, the plasma can be blown away so that a portion of the plasma cannot contact the focus ring body 200 and the base 100, thereby reducing etching of the focus ring body 200 and the base 100.

[0087] At least one second air hole 212 is provided in the focusing ring body 200, so that when the gas is blown from the inner edge of the focusing ring body 200 to the outer edge of the base 100, it will play a gas sealing role on the gap to prevent the plasma from contacting the inner edge surface of the focusing ring body 200 and the outer edge surface of the base 100, thereby delaying the etching of the inner edge surface of the focusing ring body 200 and the outer edge surface of the base 100.

[0088] In some embodiments, the base 100 may be provided with an air channel 110, such as Fig.13 and Fig.11 As shown, the gas channel 110 is connected to the gas flow channel 221. Exemplarily, the base 100 may be provided with a helium tube, in which case the helium tube serves as the gas channel 110, and the gas flow channel 221 may be directly connected to the helium tube, so as to transmit gas to the gas flow channel 221 through the helium tube.

[0089] Of course, the air channel 110 can also be separately arranged on the base 100 , which is independent of the helium tube of the base 100 . The air channel 110 is also connected to the air flow channel 221 . In this case, gas can be transferred to the air flow channel 221 through the separately arranged air channel 110 .

[0090] Based on the above-mentioned carrying device, an embodiment of the present application also discloses a process chamber, and the disclosed process chamber includes the above-mentioned carrying device, wherein the carrying device is arranged in the inner cavity of the process chamber so that the wafer carried by the carrying device can be processed in the process chamber, such as etching process, etc.

[0091] The embodiments of the present application are described above in conjunction with the accompanying drawings, but the present application is not limited to the above-mentioned specific implementation methods. The above-mentioned specific implementation methods are merely illustrative and not restrictive. Under the guidance of the present application, ordinary technicians in this field can also make many forms without departing from the purpose of the present application and the scope of protection of the claims, all of which are within the protection of the present application.

Claims

1. A focusing ring, applied to a process chamber of a semiconductor process equipment, characterized in that: The focusing ring comprises: Focus ring body (200); At least one first air hole (211) is provided at one end of the focusing ring body (200), and the at least one first air hole (211) is used for exhausting air along the axial direction of the focusing ring body (200); At least one second air hole (212) is provided on the inner edge of the focusing ring body (200), and the at least one second air hole (212) is used to discharge air along the radial direction of the focusing ring body (200) toward the inside of the space surrounded by the focusing ring body (200); An air flow channel (221) is arranged in the focusing ring body (200), and the air flow channel (221) is respectively connected to the first air hole (211) and the second air hole (212).

2. The focusing ring according to claim 1, characterized in that: The focusing ring body (200) comprises a first ring body (210) and a second ring body (220) which are matched and connected in the axial direction of the focusing ring body (200); At least one of the first air holes (211) and at least one of the second air holes (212) are respectively arranged on the first ring body (210); The air flow channel (221) is arranged on the second ring body (220).

3. The focusing ring according to claim 2, characterized in that: Each of the first air holes (211) penetrates the first ring body (210) along the axial direction of the focusing ring body (200), and each of the second air holes (212) penetrates the inner annular surface of the first ring body (210) along the radial direction of the focusing ring body (200); The air outlet end of the air flow channel (221) passes through the end surface of the second ring body (220) facing the first ring body (210).

4. The focusing ring according to claim 3, characterized in that: There are a plurality of the first air holes (211) and a plurality of the second air holes (212), the plurality of the second air holes (212) are arranged in a one-to-one correspondence with the plurality of the first air holes (211), and each of the second air holes (212) is located on the inner side of the corresponding first air hole (211); The plurality of second air holes (212) are respectively connected to the air flow channel (221) through the first air holes (211) corresponding to them.

5. The focusing ring according to claim 4, characterized in that: The plurality of first air holes (211) are centrally symmetrically distributed with the geometric center of the focusing ring body (200) as the symmetry center; And / or, the plurality of second air holes (212) are distributed in a centrally symmetrical manner with the geometric center of the focusing ring body (200) as the center of symmetry.

6. The focusing ring according to claim 4, characterized in that: The air flow channel (221) comprises a first channel and a second channel; The first channel and the second channel are communicated with each other, and the first channel is communicated with a plurality of the first air holes (211) respectively.

7. The focusing ring according to claim 6, characterized in that: One of the first channel and the second channel is an annular groove (2211), and the other is a linear channel (2212); The annular groove (2211) is formed on the end surface of the second ring body (220) facing the first ring body (210), and the first ring body (210) covers the notch of the annular groove (2211) to form an annular channel; The linear channel (2212) extends along the radial direction and is connected to the annular channel; The plurality of first air holes (211) are respectively connected to the annular channel.

8. The focusing ring according to claim 7, characterized in that: The airflow channel (221) comprises a plurality of linear channels (2212), and the plurality of linear channels (2212) are centrally symmetrically distributed with the geometric center of the focusing ring body (200) as the symmetry center, and are respectively connected to the annular channel.

9. The focusing ring according to claim 8, characterized in that: The connection point between each of the linear channels (2212) and the annular channel is located in the middle of the connection points between two adjacent first air holes (211) and the annular channel.

10. The focusing ring according to claim 1, characterized in that: The air outlet end of the first air hole (211) is provided with a first expansion structure (213); And / or, the air outlet end of the second air hole (212) is provided with a second expansion structure (214).

11. The focusing ring according to claim 2, characterized in that: The first ring body (210) and the second ring body (220) are fixedly connected by means of heat pressing and bonding; Alternatively, the focusing ring body (200) is an integrally formed structure.

12. A carrying device, characterized in that: It comprises a base (100) and a focusing ring as claimed in any one of claims 1 to 11; The focusing ring is sleeved on the periphery of the base (100).

13. The carrying device according to claim 12, characterized in that: The base (100) is provided with an air passage (110), and the air passage (110) is in communication with the air flow channel (221).

14. A process chamber, characterized in that: The carrier device comprising claim 12 or 13; The carrying device is arranged in the inner cavity of the process chamber.

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