Efficient cleaning method for crystalline silicon solar cell reworked piece

Abstract

The invention discloses a method for cleaning a high-efficiency crystalline silicon solar cell reworked piece, which belongs to the technical field of TOPCon cell industry, and mainly comprises the following steps: carrying out alkali washing on the reworked piece by using an alkali washing agent I, washing with water, carrying out acid washing by using an acid washing agent I, washing with water, carrying out alkali washing by using an alkali washing agent II, carrying out acid washing by using an acid washing agent II, washing with water, and removing impurities and hanging water on the surface of the reworked piece. And drying. By cleaning dirt on the surface of the reworked piece through the cleaning method, the thickness loss of a semi-finished product of the reworked piece is reduced, the electrical performance parameter of the product is improved, and the cleaning cost is reduced.

Description

Technical Field

[0001] The invention relates to the technical field of TOPCon battery preparation, in particular to a rework and cleaning process for a battery sheet. Background Art

[0002] In the process of preparing TOPCon high-efficiency solar cells, a batch of intermediate products or products to be packaged that do not meet the quality standards may appear due to process abnormalities. In order to avoid secondary rework or scrapping during the production of TOPCon high-efficiency solar cells, these intermediate products that do not meet the quality standards are usually reused from the perspectives of resource waste and cost reduction. Such intermediate products that do not meet the quality standards are called rework sheets in the art, and their reuse mainly refers to rework processing, which can also be referred to as rework cleaning.

[0003] Since TOPCon high-efficiency solar cells are mainly composed of film structures, simple cleaning is often unable to remove contact dirt on the coating. Traditional rework mainly involves directly removing defective structural film layers, which will obviously directly cause thickness loss of the reworked semi-finished products, thereby affecting the electrical performance parameters of the TOPCon cell. Summary of the invention

[0004] In order to overcome the defects of the conventional rework cleaning process in the prior art that the thickness loss of the reworked semi-finished product cannot be avoided and the cleaning is not thorough.

[0005] In view of at least one of the above technical problems, the present invention provides a method for cleaning reworked sheets of high-efficiency crystalline silicon solar cells, which cleans the dirt on the surface of the reworked sheets by designing a cleaning process, reduces the thickness loss of the semi-finished reworked sheets, improves the electrical performance parameters of the product, and reduces the cleaning cost. The specific technical solution is as follows: A method for cleaning a reworked high-efficiency crystalline silicon solar cell wafer mainly comprises the following steps: S1, using alkaline cleaning agent I to alkaline clean the reworked sheet; the alkaline cleaning agent I is composed of hydrogen peroxide, NaOH aqueous solution and deionized water; S2, washing the reworked sheet after being processed in step S1; S3, pickling the reworked sheet after the treatment in step S2 using pickling agent I; the pickling agent I is composed of HF aqueous solution and deionized water; S4, washing the reworked sheet after being processed in step S3; S5, using alkaline cleaning agent II to alkaline clean the reworked sheet, and then washing with water; the alkaline cleaning agent II is composed of deionized water, NaOH aqueous solution and a texturing additive; S6, pickling the reworked sheet after the treatment in step S5 with a pickling agent II, wherein the pickling agent II is composed of an aqueous HCl solution, an HF aqueous solution and deionized water; S7, washing the reworked sheet after being processed in step S6; S8, removing impurities and water on the surface of the reworked sheet treated in step S7; S9, drying the reworked sheet after being processed in step S8.

[0006] In some embodiments of the present disclosure, in step S1, the mass concentration of the NaOH aqueous solution is 28% to 32%, and the component ratio of the hydrogen peroxide, the NaOH aqueous solution and the deionized water is 40:60:300; during alkaline washing, the self-replenishing alkali solution I is added to the alkaline cleaning agent I every 300 to 500 seconds, and the self-replenishing alkali solution I includes deionized water and NaOH aqueous solution, and the component ratio of the deionized water and the NaOH aqueous solution is 6:0.85 to 1.

[0007] In some embodiments of the present disclosure, in step S2, the water washing method is to use 10-25° C. deionized water for 100-300 seconds.

[0008] In some embodiments of the present disclosure, in step S3, the mass concentration of the HF aqueous solution is 45% to 49%, and the component ratio of the HF aqueous solution to deionized water is 20:360; during pickling, self-replenishing acid solution I is added to the pickling agent I every 300 to 500 seconds, and the self-replenishing acid solution I includes deionized water and HF aqueous solution, and the component ratio of the ionized water to the HF aqueous solution is 6:0.15.

[0009] In some embodiments of the present disclosure, in step S4, the water washing method is to use 10-25° C. deionized water for 100-300 s.

[0010] In some embodiments of the present disclosure, in step S5, the mass concentration of the NaOH aqueous solution is 28% to 32%, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 320:70:2; during alkaline washing, the self-replenishing alkali solution II is added to the alkaline washing agent II every 340 to 520 seconds, and the self-replenishing alkali solution I includes deionized water, a NaOH aqueous solution and a texturing additive, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 6:0.85 to 1:0.2 to 0.4; the water washing method is to use 10 to 25°C deionized water to wash for 120 seconds.

[0011] In some embodiments of the present disclosure, in step S5, the reworked sheet is subjected to a water washing process after alkali washing for at least two cycles.

[0012] In some embodiments of the present disclosure, in step S6, the mass concentration of the HF aqueous solution is 45% to 49%, and the mass concentration of the HCl aqueous solution is 35% to 39%, wherein the component ratio of the HF aqueous solution, the HCl aqueous solution and the deionized water is 30:70:300; during pickling, self-replenishing acid solution II is added to the pickling agent II every 300 to 500 seconds, and the self-replenishing acid solution I includes deionized water, HCl aqueous solution and HF aqueous solution, and the component ratio of the deionized water, the HCl aqueous solution and the HF aqueous solution is 5:0.1:0.15.

[0013] In some embodiments of the present disclosure, in step S8, the reworked sheet washed with water in step S7 is transferred to a slow pull tank, the reworked sheet is first immersed in deionized water to be completely immersed, and then slowly pulled upward to pull down the impurities and water film on the surface of the reworked sheet by the surface tension of the deionized water; wherein the temperature of the deionized water is 60-75°C.

[0014] In some embodiments of the present disclosure, in step S9, the drying temperature is 85-90° C., and the drying time is 600-1200 s.

[0015] Compared with the prior art, the above-mentioned cleaning method for high-efficiency crystalline silicon solar cell reworked wafers has the following beneficial effects: This cleaning method uses a superimposed alkali cleaning process, that is, first using alkali cleaning agent I to remove the contact dirt on the surface of the reworked sheet, and then using alkali cleaning agent II to remove the surface film structure, which can reduce the thickness loss of the reworked sheet semi-finished product, improve the electrical performance parameters of the product, and reduce the cleaning cost; It brings new technical inspiration to the cleaning method of solar cell rework. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1 Schematic diagram of the process of Example 1 in the method of the present invention. DETAILED DESCRIPTION

[0017] In order to better understand the purpose, structure and function of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below. It should be noted that, unless otherwise defined, all technical and scientific terms used herein have the same meaning as those generally understood by those skilled in the art of the present application. The terms used herein in this application are only for the purpose of describing specific embodiments and are not intended to limit the present application.

[0018] As shown in the attached figure Figure 1 As shown, a cleaning method for reworked high-efficiency crystalline silicon solar cells is designed, which mainly includes the following steps: S1, using alkaline cleaning agent I to alkaline clean the reworked sheet; the alkaline cleaning agent I is composed of hydrogen peroxide, NaOH aqueous solution and deionized water. This step is mainly used to remove organic film, contamination, etc.; S2, washing the reworked sheet after the treatment in step S1; this step is mainly used to wash the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water; S3, pickling the reworked wafer after the treatment in step S2 with a pickling agent I; the pickling agent I is composed of an HF aqueous solution and deionized water; this step is mainly used to remove the aluminum oxide film layer and the silicon nitride film layer on the surface of the reworked wafer; S4, washing the reworked sheet after the treatment in step S3; this step is mainly used to wash the desorbed impurities and the acid remaining on the surface of the reworked sheet with deionized water; S5, using alkaline cleaning agent II to alkaline clean the reworked sheet, and then washing with water; the alkaline cleaning agent II is composed of deionized water, NaOH aqueous solution and texturing additives; this step is mainly used to remove the POLY dirty layer on the surface of the reworked sheet, remove the silicon wafer oxide layer and SiO2 layer; and rinse the desorbed impurities and the alkaline solution remaining on the surface of the reworked sheet with deionized water; S6, pickling the reworked sheet after the treatment in step S5 with a pickling agent II, wherein the pickling agent II is composed of an aqueous solution of HCl, an aqueous solution of HF and deionized water; this step mainly removes the metal ions remaining on the surface of the reworked sheet by mixed acid cleaning; S7, washing the reworked sheet after the treatment in step S6; washing the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water; S8, removing impurities and water on the surface of the reworked sheet treated in step S7; S9, drying the reworked sheet after being processed in step S8.

[0019] In the above implementation mode, three embodiments are listed to implement the above technical solution. The reference to "embodiment" in this article means that the specific features, structures or characteristics described in conjunction with the embodiment may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. In the absence of conflict, the various embodiments in the present application can be combined with each other.

[0020] Embodiment 1 discloses a method for cleaning a reworked high-efficiency crystalline silicon solar cell wafer, which mainly comprises the following steps: A1, using alkaline cleaning agent I to alkaline clean the reworked sheet; the alkaline cleaning agent I is composed of hydrogen peroxide, NaOH aqueous solution and deionized water. This step is mainly used to remove organic film, contamination, etc.; In this embodiment, the mass concentration of the NaOH aqueous solution is 28%, and the component ratio of the hydrogen peroxide, the NaOH aqueous solution and the deionized water is 40:60:300; during alkali washing, the self-replenishing alkali solution I is added to the alkali washing agent I every 500 seconds, and the self-replenishing alkali solution I includes deionized water and the NaOH aqueous solution, and the component ratio of the deionized water and the NaOH aqueous solution is 6:0.85.

[0021] A2, washing the reworked sheet after the treatment in step A1; this step is mainly used to wash the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water; In this embodiment, the water washing method is to use 10°C deionized water to wash for 300s.

[0022] A3, pickling the reworked wafer after the treatment in step A2 with pickling agent I; the pickling agent I is composed of HF aqueous solution and deionized water; this step is mainly used to remove the aluminum oxide film layer and silicon nitride film layer on the surface of the reworked wafer; In this embodiment, the mass concentration of the HF aqueous solution is 49%, and the component ratio of the HF aqueous solution to deionized water is 20:360; during pickling, self-replenishing acid solution I is added to the pickling agent I every 400 seconds, and the self-replenishing acid solution I includes deionized water and HF aqueous solution, and the component ratio of the ionized water to the HF aqueous solution is 6:0.15.

[0023] A4, washing the reworked sheet after the treatment in step A3; this step is mainly used to wash the desorbed impurities and the acid remaining on the surface of the reworked sheet with deionized water; In this embodiment, the water washing method is to use 10°C deionized water to wash for 300 minutes.

[0024] A5, use alkaline cleaning agent II to alkaline clean the reworked sheet, and then wash it with water; the alkaline cleaning agent II is composed of deionized water, NaOH aqueous solution and texturing additives; this step is mainly used to remove the POLY dirty layer on the surface of the reworked sheet, remove the silicon wafer oxide layer and SiO2 layer; use deionized water to rinse the desorbed impurities and the alkaline solution remaining on the surface of the reworked sheet; In this embodiment, the mass concentration of the NaOH aqueous solution is 32%, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 320:70:2; during alkaline washing, the self-replenishing alkali solution II is added to the alkaline washing agent II every 340 seconds, and the self-replenishing alkali solution I includes deionized water, a NaOH aqueous solution and a texturing additive, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 6:1:0.4; the water washing method is to use 25°C deionized water to wash for 120 seconds.

[0025] A6, pickling the reworked sheet after the treatment in step A5 with pickling agent II, wherein the pickling agent II is composed of HCl aqueous solution, HF aqueous solution and deionized water; this step mainly removes the metal ions remaining on the surface of the reworked sheet by mixed acid cleaning; In this embodiment, the mass concentration of the HF aqueous solution is 49%, and the mass concentration of the HCl aqueous solution is 39%, wherein the component ratio of the HF aqueous solution, the HCl aqueous solution and the deionized water is 30:70:300; during pickling, self-replenishing acid solution II is added to the pickling agent II every 300 seconds, and the self-replenishing acid solution I includes deionized water, HCl aqueous solution and HF aqueous solution, and the component ratio of the deionized water, the HCl aqueous solution and the HF aqueous solution is 5:0.1:0.15.

[0026] A7, washing the reworked sheet after the treatment in step A6; washing the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water; A8, removing impurities and water on the surface of the reworked sheet treated in step A7; In this embodiment, the washed reworked sheet is transferred to a slow pull tank, where the reworked sheet is first immersed in deionized water and completely immersed, and then slowly pulled upward to pull down the impurities and water film on the surface of the reworked sheet by the surface tension of the deionized water; wherein the temperature of the deionized water is 60°C.

[0027] A9, drying the reworked sheet after being processed in step A8; In this embodiment, the drying temperature is 85°C and the drying time is 1200s.

[0028] This cleaning method uses a superimposed alkaline washing process, that is, first using alkaline cleaning agent I to remove contact dirt on the surface of the reworked sheet, and then using alkaline cleaning agent II to remove the surface film structure, which can reduce the 5um thickness loss of the reworked sheet semi-finished product, improve the product's electrical performance parameters, increase efficiency by 0.02%, reduce HF+NaOH consumption by nearly 10%, and save cleaning costs.

[0029] Embodiment 2 discloses a method for cleaning a reworked high-efficiency crystalline silicon solar cell wafer, which mainly comprises the following steps: B1, using alkaline cleaning agent I to alkaline clean the reworked sheet; the alkaline cleaning agent I is composed of hydrogen peroxide, NaOH aqueous solution and deionized water. This step is mainly used to remove organic film, contamination, etc.; In this embodiment, the mass concentration of the NaOH aqueous solution is 30%, and the component ratio of the hydrogen peroxide, the NaOH aqueous solution and the deionized water is 40:60:300; during alkali washing, the self-replenishing alkali solution I is added to the alkali washing agent I every 400 seconds, and the self-replenishing alkali solution I includes deionized water and the NaOH aqueous solution, and the component ratio of the deionized water and the NaOH aqueous solution is 6:0.92.

[0030] B2, washing the reworked sheet after the treatment in step B1; this step is mainly used to wash the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water; In this embodiment, the water washing method is to use 15°C deionized water to wash for 200s.

[0031] B3, pickling the reworked wafer after the treatment in step B2 with pickling agent I; the pickling agent I is composed of HF aqueous solution and deionized water; this step is mainly used to remove the aluminum oxide film layer and silicon nitride film layer on the surface of the reworked wafer; In this embodiment, the mass concentration of the HF aqueous solution is 47%, and the component ratio of the HF aqueous solution to deionized water is 20:360; during pickling, self-replenishing acid solution I is added to the pickling agent I every 400 seconds, and the self-replenishing acid solution I includes deionized water and HF aqueous solution, and the component ratio of the ionized water to the HF aqueous solution is 6:0.15 B4, washing the reworked sheet after the treatment in step B3; this step is mainly used to wash the desorbed impurities and the acid remaining on the surface of the reworked sheet with deionized water; In this embodiment, the washing method is to use 15°C deionized water to wash for 200s. B5, use alkaline cleaning agent II to alkaline clean the reworked sheet, and then wash with water; the alkaline cleaning agent II is composed of deionized water, NaOH aqueous solution and texturing additives; this step is mainly used to remove the POLY dirty layer on the surface of the reworked sheet; use deionized water to rinse the desorbed impurities and the alkaline solution remaining on the surface of the reworked sheet; In this embodiment, the mass concentration of the NaOH aqueous solution is 30%, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 320:70:2; during alkaline washing, the self-replenishing alkali solution II is added to the alkaline washing agent II every 440 seconds, and the self-replenishing alkali solution I includes deionized water, a NaOH aqueous solution and a texturing additive, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 6:0.92:0.3; the water washing method is to use 15°C deionized water to wash for 120 seconds.

[0032] B6, using alkaline cleaning agent II to clean the reworked wafer again, and then washing with water; the alkaline cleaning agent II is composed of deionized water, NaOH aqueous solution and texturing additive; this step is mainly used to remove the oxide layer and SiO2 layer of the silicon wafer; the deionized water is used to rinse the desorbed impurities and the alkaline solution remaining on the surface of the reworked wafer; In this embodiment, the mass concentration of the HF aqueous solution is 47%, the mass concentration of the HCl aqueous solution is 37%, wherein the component ratio of the HF aqueous solution, the HCl aqueous solution and the deionized water is 30:70:300; during pickling, the self-replenishing acid solution II is added to the pickling agent II every 400 seconds, the self-replenishing acid solution I includes deionized water, HCl aqueous solution and HF aqueous solution, and the component ratio of the deionized water, the HCl aqueous solution and the HF aqueous solution is 5:0.1:0.15 B7, pickling the reworked sheet after the treatment in step B6 with pickling agent II, wherein the pickling agent II is composed of HCl aqueous solution, HF aqueous solution and deionized water; this step mainly removes the metal ions remaining on the surface of the reworked sheet by mixed acid cleaning; B8, washing the reworked sheet after the treatment in step B7 with water; washing the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water; B9, removing impurities and water on the surface of the reworked sheet treated in step B8; In this embodiment, the washed reworked sheet is transferred to the slow pull tank, the reworked sheet is first immersed in deionized water and completely immersed, and then slowly pulled upward, and the impurities and water film on the surface of the reworked sheet are pulled down by the surface tension of the deionized water; wherein the deionized water temperature is 65°C B10, drying the reworked sheet after being processed in step B9; In this embodiment, the drying temperature is 88°C and the drying time is 900s.

[0033] Embodiment 3 discloses a method for cleaning a reworked high-efficiency crystalline silicon solar cell wafer, which mainly comprises the following steps: C1, using alkaline cleaning agent I to alkaline clean the reworked sheet; the alkaline cleaning agent I is composed of hydrogen peroxide, NaOH aqueous solution and deionized water. This step is mainly used to remove organic film, contamination, etc.; In this embodiment, the mass concentration of the NaOH aqueous solution is 32%, and the component ratio of the hydrogen peroxide, the NaOH aqueous solution and the deionized water is 40:60:300; during alkali washing, the self-replenishing alkali solution I is added to the alkali cleaning agent I every 300 seconds, and the self-replenishing alkali solution I includes deionized water and NaOH aqueous solution, and the component ratio of the deionized water and the NaOH aqueous solution is 6:1 C2, washing the reworked sheet after the treatment in step C1; this step is mainly used to wash the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water; In this embodiment, the water washing method is to use 25°C deionized water to wash for 100s.

[0034] C3, pickling the reworked wafer after the treatment in step C2 using pickling agent I; the pickling agent I is composed of HF aqueous solution and deionized water; this step is mainly used to remove the aluminum oxide film layer and silicon nitride film layer on the surface of the reworked wafer; In this embodiment, the mass concentration of the HF aqueous solution is 45%, and the component ratio of the HF aqueous solution to deionized water is 20:360; during pickling, self-replenishing acid solution I is added to the pickling agent I every 500 seconds, and the self-replenishing acid solution I includes deionized water and HF aqueous solution, and the component ratio of the ionized water to the HF aqueous solution is 6:0.15.

[0035] C4, washing the reworked sheet after the treatment in step C3; this step is mainly used to wash the desorbed impurities and the acid remaining on the surface of the reworked sheet with deionized water; In this embodiment, the washing method is to use 25°C deionized water to wash for 100s. C5, using alkaline cleaning agent II to alkaline clean the reworked wafer, and then washing with water; the alkaline cleaning agent II is composed of deionized water, NaOH aqueous solution and texturing additives; this step is mainly used to remove the POLY dirty layer on the surface of the reworked wafer, remove the silicon wafer oxide layer and SiO2 layer; and rinse the desorbed impurities and the alkaline solution remaining on the surface of the reworked wafer with deionized water; In this embodiment, the mass concentration of the NaOH aqueous solution is 28%, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 320:70:2; during alkaline washing, the self-replenishing alkali solution II is added to the alkaline washing agent II every 520 seconds, and the self-replenishing alkali solution I includes deionized water, a NaOH aqueous solution and a texturing additive, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 6:0.85:0.2; the water washing method is to use 10°C deionized water to wash for 120 seconds.

[0036] C6, pickling the reworked sheet after the treatment in step C5 with pickling agent II, wherein the pickling agent II is composed of HCl aqueous solution, HF aqueous solution and deionized water; this step mainly removes the metal ions remaining on the surface of the reworked sheet by mixed acid cleaning; In this embodiment, the mass concentration of the HF aqueous solution is 45%, the mass concentration of the HCl aqueous solution is 35%, wherein the component ratio of the HF aqueous solution, the HCl aqueous solution and the deionized water is 30:70:300; during pickling, self-replenishing acid solution II is added to the pickling agent II every 500 seconds, the self-replenishing acid solution I includes deionized water, HCl aqueous solution and HF aqueous solution, and the component ratio of the deionized water, the HCl aqueous solution and the HF aqueous solution is 5:0.1:0.15.

[0037] C7, washing the reworked sheet after the treatment in step C6; washing the desorbed impurities and the alkali solution remaining on the surface of the reworked sheet with deionized water C8, removing impurities and water on the surface of the reworked sheet treated in step C7; In this embodiment, the washed reworked sheet is transferred to a slow pull tank, where the reworked sheet is first immersed in deionized water and completely immersed, and then slowly pulled upward to pull down the impurities and water film on the surface of the reworked sheet by the surface tension of the deionized water; wherein the temperature of the deionized water is 75°C.

[0038] C9, drying the reworked sheet after being processed in step C8; In this embodiment, the drying temperature is 90°C and the drying time is 600s.

[0039] It can be understood that the above description is only for illustrating the specific implementation of the present application, but the protection scope of the present application is not limited thereto, and any changes or substitutions within the technical scope disclosed in the present application should be included in the disclosure scope of the present application.

Claims

1. A method for cleaning reworked sheets of high-efficiency crystalline silicon solar cells, characterized in that: The main steps include: S1, using alkaline cleaning agent I to alkaline clean the reworked sheet; the alkaline cleaning agent I is composed of hydrogen peroxide, NaOH aqueous solution and deionized water; S2, washing the reworked sheet after being processed in step S1; S3, pickling the reworked sheet after the treatment in step S2 using pickling agent I; the pickling agent I is composed of HF aqueous solution and deionized water; S4, washing the reworked sheet after being processed in step S3; S5, using alkaline cleaning agent II to alkaline clean the reworked sheet, and then washing with water; the alkaline cleaning agent II is composed of deionized water, NaOH aqueous solution and a texturing additive; S6, pickling the reworked sheet after the treatment in step S5 with a pickling agent II, wherein the pickling agent II is composed of an aqueous HCl solution, an HF aqueous solution and deionized water; S7, washing the reworked sheet after being processed in step S6; S8, removing impurities and water on the surface of the reworked sheet treated in step S7; S9, drying the reworked sheet after being processed in step S8.

2. The cleaning method for reworked high-efficiency crystalline silicon solar cell sheets according to claim 1, characterized in that: In the step S1, the mass concentration of the NaOH aqueous solution is 28% to 32%, and the component ratio of the hydrogen peroxide, the NaOH aqueous solution and the deionized water is 40:60:300; during alkali washing, the self-replenishing alkali solution I is added to the alkali washing agent I every 300 to 500 seconds, and the self-replenishing alkali solution I includes deionized water and the NaOH aqueous solution, and the component ratio of the deionized water to the NaOH aqueous solution is 6:0.85 to 1.

3. The cleaning method for reworked high-efficiency crystalline silicon solar cell sheets according to claim 1, characterized in that: In step S2, the water washing method is to use 10-25° C. deionized water for washing for 100-300 seconds.

4. The method for cleaning reworked high-efficiency crystalline silicon solar cell sheets according to claim 1, characterized in that: In the step S3, the mass concentration of the HF aqueous solution is 45% to 49%, and the component ratio of the HF aqueous solution to deionized water is 20:360; during pickling, self-replenishing acid solution I is added to the pickling agent I every 300 to 500 seconds, and the self-replenishing acid solution I includes deionized water and HF aqueous solution, and the component ratio of the ionized water to the HF aqueous solution is 6:0.

15.

5. The method for cleaning reworked high-efficiency crystalline silicon solar cell wafers according to claim 1, characterized in that: In step S4, the water washing method is to use 10-25° C. deionized water for 100-300 seconds.

6. The method for cleaning reworked high-efficiency crystalline silicon solar cell wafers according to claim 1, characterized in that: In the step S5, the mass concentration of the NaOH aqueous solution is 28% to 32%, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 320:70:2; during alkaline washing, the self-replenishing alkali solution II is added to the alkaline washing agent II every 340 to 520 seconds, and the self-replenishing alkali solution I includes deionized water, a NaOH aqueous solution and a texturing additive, and the component ratio of the deionized water, the NaOH aqueous solution and the texturing additive is 6:0.85 to 1:0.2 to 0.4; the water washing method is to use 10 to 25°C deionized water to wash for 120 seconds.

7. The method for cleaning reworked high-efficiency crystalline silicon solar cell wafers according to claim 6, characterized in that: In the step S5, the reworked sheet is washed with water after alkali washing for at least two cycles.

8. The method for cleaning reworked high-efficiency crystalline silicon solar cell wafers according to claim 1, characterized in that: In the step S6, the mass concentration of the HF aqueous solution is 45% to 49%, and the mass concentration of the HCl aqueous solution is 35% to 39%, wherein the component ratio of the HF aqueous solution, the HCl aqueous solution and the deionized water is 30:70:300; during pickling, self-replenishing acid solution II is added to the pickling agent II every 300 to 500 seconds, and the self-replenishing acid solution I includes deionized water, HCl aqueous solution and HF aqueous solution, and the component ratio of the deionized water, the HCl aqueous solution and the HF aqueous solution is 5:0.1:0.

15.

9. The method for cleaning reworked high-efficiency crystalline silicon solar cell wafers according to claim 1, characterized in that: In the step S8, the reworked sheet washed in the step S7 is transferred to a slow pull tank, and the reworked sheet is first immersed in deionized water to be completely immersed, and then slowly pulled upward to pull down the impurities and water film on the surface of the reworked sheet by the surface tension of the deionized water; wherein the temperature of the deionized water is 60-75°C.

10. The method for cleaning reworked high-efficiency crystalline silicon solar cell wafers according to claim 1, characterized in that: In step S9, the drying temperature is 85-90° C. and the drying time is 600-1200 s.

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