Silicon wafer edge etching equipment and silicon wafer edge etching methods

Abstract

This invention provides a silicon wafer edge etching apparatus and a silicon wafer edge etching method, relating to the field of semiconductor technology. The silicon wafer edge etching apparatus includes: an upper support stage and a lower support stage vertically opposed to each other, with the silicon wafer located on the side of the lower support stage facing the upper support stage; and a controller connected to the upper support stage and / or the lower support stage. The controller is used to acquire the thickness of the silicon wafer and, based on the thickness, control the upper support stage to move vertically and / or control the lower support stage to move vertically, so that the distance between the upper and lower support stages is equal to the thickness of the silicon wafer. This invention can avoid excessive pressure between the upper and lower support stages and the silicon wafer, preventing fragmentation. It can also fix the silicon wafer using the upper and lower support stages, preventing displacement during subsequent processing. Furthermore, the upper support stage can cover areas on the upper surface of the silicon wafer that do not need to be etched, preventing etching in these areas.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and in particular to a silicon wafer edge etching apparatus and a silicon wafer edge etching method. Background Technology

[0002] During silicon wafer processing, dopants are added to adjust the resistivity of the silicon wafer. Silicon wafers with more dopants are called heavily doped silicon wafers. Heavily doped silicon wafers require back sealing treatment because of the large amount of dopants they contain. This is to prevent the dopants from diffusing into the gas and partially entering the newly grown epitaxial layer during subsequent epitaxial growth.

[0003] After back-sealing the silicon wafer, edge etching is required to prevent edge defects or dislocations during subsequent epitaxial growth. Edge etching involves pressing and fixing the two opposing surfaces of the wafer, leaving the required etching width at the edge before etching. However, the pressing pressure is difficult to control. Excessive pressure can damage the wafer and cause fragmentation, while insufficient pressure can result in undesirable etching areas, affecting wafer quality. Summary of the Invention

[0004] This invention provides a silicon wafer edge etching device and a silicon wafer edge etching method to solve the problem in the prior art that the pressure of squeezing and fixing the silicon wafer cannot be controlled when performing edge etching on the silicon wafer.

[0005] To address the aforementioned technical problems, embodiments of the present invention provide the following technical solutions:

[0006] This invention provides a silicon wafer edge etching apparatus, comprising:

[0007] An upper support platform and a lower support platform are arranged opposite each other in the vertical direction. The silicon wafer is located on the side of the lower support platform facing the upper support platform. The upper support platform is movable in the vertical direction and / or the lower support platform is movable in the vertical direction.

[0008] A controller, connected to the upper support platform and / or the lower support platform, is used to obtain the thickness of the silicon wafer and control the upper support platform to move vertically and / or control the lower support platform to move vertically according to the thickness, so that the distance between the upper support platform and the lower support platform is equal to the thickness of the silicon wafer.

[0009] In some embodiments, the silicon wafer edge etching apparatus further includes:

[0010] A thickness detection component is disposed on the side of the upper support platform and the lower support platform, and the thickness detection component is connected to the controller;

[0011] The thickness detection component is used to detect the thickness of the silicon wafer and send the thickness of the silicon wafer to the controller.

[0012] In some embodiments, before placing the silicon wafer on the side of the lower support platform facing the upper support platform, the controller is further configured to control the lower support platform to be at a first preset height and control the upper support platform to be at a second preset height, wherein the second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

[0013] In some embodiments, the controller is specifically configured to determine the movement distance based on the height difference and the thickness of the silicon wafer;

[0014] Furthermore, the controller is also specifically used for at least one of the following:

[0015] Control the upper support platform to move downwards by the specified distance in the vertical direction;

[0016] Control the lower support platform to move upward by the specified distance in the vertical direction;

[0017] The upper support platform is controlled to move downwards a first distance in the vertical direction, and the lower support platform is controlled to move upwards a second distance in the vertical direction, wherein the moving distance is equal to the sum of the first distance and the second distance.

[0018] In some embodiments, the dimension of the first bearing surface of the upper support platform facing the silicon wafer is smaller than the dimension of the upper surface of the silicon wafer;

[0019] The dimension of the second bearing surface of the lower bearing platform facing the silicon wafer is smaller than the dimension of the lower surface of the silicon wafer;

[0020] The edges of the silicon wafer are exposed through the first and second bearing surfaces.

[0021] In some embodiments, the silicon wafer edge etching apparatus further includes:

[0022] A nozzle is disposed at the edge of the silicon wafer and is used to spray etching solution onto the edge of the silicon wafer.

[0023] In some embodiments, the lower support platform fixes the silicon wafer by vacuum adsorption.

[0024] In some embodiments, the upper support platform and the lower support platform are coaxially arranged;

[0025] The central axis of the silicon wafer is located on the axis of the upper support platform and the lower support platform.

[0026] In some embodiments, a sealing ring is provided on the edge of the first bearing surface;

[0027] A sealing ring is provided on the edge of the second bearing surface.

[0028] This invention also provides a silicon wafer edge etching method, applied to the silicon wafer edge etching equipment as described in any of the above embodiments, the method comprising:

[0029] To obtain the thickness of the silicon wafer;

[0030] The silicon wafer is placed on the side of the lower support platform facing the upper support platform;

[0031] The upper support platform is moved vertically and / or the lower support platform is moved vertically according to the thickness, so that the distance between the upper support platform and the lower support platform is equal to the thickness of the silicon wafer.

[0032] The upper support platform and the lower support platform are arranged opposite each other in the vertical direction.

[0033] The embodiments of the present invention have the following beneficial effects:

[0034] The silicon wafer edge etching apparatus provided in this embodiment of the invention first places the silicon wafer on the side of the lower support platform facing the upper support platform, that is, above the lower support platform. The controller obtains the thickness of the silicon wafer and controls the upper support platform to move vertically and / or controls the lower support platform to move vertically, so that the distance between the upper and lower support platforms is equal to the thickness of the silicon wafer. In this case, both the upper and lower support platforms are in contact with the surface of the silicon wafer, and there is no excessive pressure between the upper and lower support platforms and the silicon wafer. That is, by moving the distance, the pressure between the upper and lower support platforms and the silicon wafer can be better controlled, which can avoid the fragmentation caused by excessive pressure between the upper and lower support platforms and the silicon wafer. The upper and lower support platforms can also fix the silicon wafer to prevent it from shifting during subsequent processing. In addition, the upper support platform can cover the area on the upper surface of the silicon wafer that does not need to be etched, thus preventing these areas from being etched. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of the silicon wafer edge etching equipment provided in an embodiment of the present invention;

[0036] Figure 2 This is a flowchart illustrating the silicon wafer edge etching method provided in an embodiment of the present invention.

[0037] Figure label:

[0038] 1: Upper support platform; 2: Lower support platform; 3: Silicon wafer. Detailed Implementation

[0039] To make the technical problems, technical solutions and advantages of the embodiments of the present invention clearer, a detailed description will be given below in conjunction with the accompanying drawings and specific embodiments.

[0040] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some, not all, of the embodiments of the present invention. All other embodiments obtained by those skilled in the art based on the described embodiments of the present invention are within the scope of protection of the present invention.

[0041] To address the problem of uncontrollable pressure when squeezing and fixing silicon wafers during edge etching in existing technologies, this invention provides a silicon wafer edge etching device and a silicon wafer edge etching method.

[0042] like Figure 1 As shown, an embodiment of the present invention provides a silicon wafer edge etching apparatus, comprising:

[0043] An upper support platform 1 and a lower support platform 2 are arranged opposite each other in the vertical direction, with the silicon wafer 3 located on the side of the lower support platform 2 facing the upper support platform 1;

[0044] As the name suggests, the upper support platform 1 and the lower support platform 2 are arranged opposite each other in the vertical direction, with the upper support platform 1 located above the lower support platform 2.

[0045] The upper support platform 1 and the lower support platform 2 can be cylindrical or approximately cylindrical, and their central axes are located on the same straight line, which means that the upper support platform 1 and the lower support platform 2 are arranged opposite to each other.

[0046] The upper support platform 1 is capable of moving in the vertical direction and / or the lower support platform 2 is capable of moving in the vertical direction.

[0047] In a silicon wafer edge etching device, it is possible that only the upper support stage 1 can rise or fall vertically, or only the lower support stage 2 can rise or fall vertically, or both the upper support stage 1 and the lower support stage 2 can rise or fall vertically.

[0048] During control, the silicon wafer edge etching equipment may include only one drive mechanism. This drive mechanism can only be connected to the upper support platform 1 and drive the upper support platform 1 to rise or fall in the vertical direction. Alternatively, the drive mechanism can only be connected to the lower support platform 2 and drive the lower support platform 2 to rise or fall in the vertical direction. Or, the drive mechanism can be connected to both the upper support platform 1 and the lower support platform 2 and drive both the upper support platform 1 and the lower support platform 2 to rise or fall in the vertical direction.

[0049] During control, the silicon wafer edge etching equipment may also include two drive mechanisms, one connected to the upper support platform 1 and the other connected to the lower support platform 2, which drive the upper support platform 1 and the lower support platform 2 to rise or fall in the vertical direction, respectively.

[0050] A controller (or control device, not shown in the figure) is connected to the upper support platform 1 and / or the lower support platform 2, wherein the controller can be connected to the upper support platform 1 and / or the lower support platform 2 via a drive structure.

[0051] The controller is used to obtain the thickness of the silicon wafer 3 and, based on the thickness, controls the upper support platform 1 to move vertically and / or controls the lower support platform 2 to move vertically, so that the distance between the upper support platform 1 and the lower support platform 2 is equal to the thickness of the silicon wafer. In this case, the surfaces of the upper support platform 1 and the silicon wafer 3, and the surfaces of the lower support platform 2 and the silicon wafer 3, are just in contact (or, the upper support platform 1 and the silicon wafer 3 are in critical contact, and the upper support platform 1 will not exert pressure on the lower support platform 2 through the silicon wafer 3). At this time, there will be no excessive pressure between the upper support platform 1 and the silicon wafer 3, or between the lower support platform 2 and the silicon wafer 3. By controlling the vertical movement of the upper support platform 1 and the lower support platform 2, the pressure between the upper and lower support platforms and the silicon wafer can be better controlled, avoiding excessive pressure between the upper and lower support platforms and the silicon wafer 3, which could cause the silicon wafer to fragment or be damaged. This further avoids the impact of fragments on the silicon wafer edge etching equipment, preventing equipment downtime and high maintenance costs. However, in this case, the silicon wafer can be fixed by the upper support platform 1 and the lower support platform 2 to prevent the silicon wafer from shifting during subsequent processing. The upper support platform 1 can also cover the areas on the upper surface of the silicon wafer that do not need to be etched, thus preventing these areas from being etched.

[0052] In some embodiments, the silicon wafer edge etching apparatus further includes:

[0053] A thickness detection component is provided, wherein the thickness detection component is disposed on the side of the upper support platform 1 and the lower support platform 2, or, as can be understood, the thickness detection component is disposed on one side of the upper support platform 1 and the lower support platform 2 which are disposed opposite to each other, and the thickness detection component is connected to the controller.

[0054] The thickness detection component is used to detect the thickness of the silicon wafer 3 and send the thickness of the silicon wafer to the controller.

[0055] Before transferring the silicon wafer to the side of the lower support platform 2 facing the upper support platform 1, the thickness of the silicon wafer is tested by a thickness detection component. After obtaining the thickness of the silicon wafer, the thickness of the silicon wafer is sent to the controller so that the controller controls the upper support platform 1 to move vertically and / or controls the lower support platform 2 to move vertically, so that the distance between the upper support platform 1 and the lower support platform 2 is equal to the thickness of the silicon wafer.

[0056] As an optional implementation, the thickness measurement component uses the capacitance voltage method to measure the thickness values ​​of multiple measurement points on any line of the silicon wafer, and takes the average of the thickness values ​​corresponding to the multiple measurement points as the thickness of the silicon wafer. The thickness of the silicon wafer obtained by the above method is more accurate.

[0057] Specifically, when measuring the thickness of a silicon wafer using the capacitance voltage method, two capacitive sensors are set up vertically opposite each other. When the silicon wafer passes between the two capacitive sensors, the two sensors will generate different voltage values, and the thickness of the silicon wafer can be determined based on the voltage values.

[0058] In some embodiments, before placing the silicon wafer 3 on the side of the lower support platform 2 facing the upper support platform 1, the controller is further configured to control the lower support platform 2 to be at a first preset height and control the upper support platform 1 to be at a second preset height, wherein the second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

[0059] That is, before placing the silicon wafer 3 above the lower support platform 2, or after processing the previous silicon wafer using the silicon wafer edge etching equipment provided in this embodiment, the lower support platform 2 is restored to the first preset height, and the upper support platform 1 is restored to the second preset height (also known as a reset operation). Then, the silicon wafer is placed above the lower support platform 2, and subsequent operations are performed to control the vertical movement of the upper support platform and / or the vertical movement of the lower support platform based on the thickness of the silicon wafer. Furthermore, after the silicon wafer processing is completed, it is also necessary to restore the lower support platform 2 to the first preset height and the upper support platform 1 to the second preset height.

[0060] The height difference between the first preset height and the second preset height is as large as possible than the thickness of the silicon wafer, so as to facilitate the placement of the silicon wafer above the lower support platform 2.

[0061] It should also be noted that the controller controls the upper support platform to move vertically and / or controls the lower support platform to move vertically in the following three ways: Method 1: The controller controls the upper support platform 1 to move vertically; Method 2: The controller controls the lower support platform 2 to move vertically; Method 3: The controller controls both the upper support platform 1 and the lower support platform 2 to move vertically. When using Method 1 to control the movement of the upper support platform 1, it can be understood that the lower support platform 2 is always at the first preset height. Therefore, after the silicon wafer processing is completed, it is only necessary to restore the upper support platform 1 to the second preset height. When using Method 2 to control the movement of the lower support platform 2, it can be understood that the upper support platform 1 is always at the second preset height. Therefore, after the silicon wafer processing is completed, it is only necessary to restore the lower support platform 2 to the first preset height. When using Method 3 to control the movement of both the upper support platform 1 and the lower support platform 2, after the silicon wafer processing is completed, it is necessary to restore both the lower support platform 2 to the first preset height and the upper support platform 1 to the second preset height.

[0062] After the silicon wafer is processed, the upper support platform 1 and the lower support platform 2 are reset, which also facilitates the subsequent determination of the moving distance of the upper support platform and / or the lower support platform.

[0063] In some embodiments, the controller is specifically used to determine the moving distance based on the height difference and the thickness of the silicon wafer. That is, when the lower support platform is at a first preset height and the upper support platform is at a second preset height, the height difference between the first preset height and the second preset height is fixed. In this case, after the silicon wafer is placed above the lower support platform, the moving distance can be obtained by subtracting the thickness of the silicon wafer from the height difference. This moving distance is the sum of the distances moved vertically by the upper support platform and / or the lower support platform.

[0064] Furthermore, the controller is also specifically used for at least one of the following:

[0065] Control the upper support platform 1 to move downward in the vertical direction by the specified moving distance. That is, when the controller only controls the upper support platform 1 to move in the vertical direction, control the upper support platform 1 to move downward by the specified moving distance so that the upper support platform 1 contacts the surface of the silicon wafer.

[0066] The lower support platform is controlled to move upward by the specified distance in the vertical direction. That is, when the controller only controls the lower support platform 2 to move in the vertical direction, the lower support platform 2 is controlled to move upward by the specified distance so that the lower support platform 2 drives the silicon wafer to move upward, so that the surface of the silicon wafer contacts the upper support platform 1.

[0067] The upper support platform 1 is controlled to move downwards a first distance in the vertical direction, and the lower support platform 2 is controlled to move upwards a second distance in the vertical direction. The moving distance is equal to the sum of the first and second distances. That is, when the controller controls both the upper and lower support platforms 1 and 2 to move vertically, the upper support platform 1 moves downwards a first distance, and the lower support platform 2 moves upwards a second distance, so that the surface of the silicon wafer contacts the upper support platform 1. Optionally, both the first and second distances are half of the moving distance.

[0068] Preferably, in order to prevent the silicon wafer from tipping over or falling during vertical movement, in this embodiment, the controller only controls the upper support platform 1 to rise or fall in the vertical direction. Specifically, after the controller controls the acquisition of the thickness of the silicon wafer, it controls the upper support platform 1 to move downward by the aforementioned distance so that the upper support platform 1 contacts the surface of the silicon wafer.

[0069] In some embodiments, in order to achieve etching of the silicon wafer edge, the size of the first bearing surface of the upper bearing stage 1 facing the silicon wafer is smaller than the size of the upper surface of the silicon wafer; the size of the second bearing surface of the lower bearing stage 2 facing the silicon wafer is smaller than the size of the lower surface of the silicon wafer; the edge of the silicon wafer is exposed through the first bearing surface and the second bearing surface.

[0070] That is, when the controller controls the upper support platform 1 to move vertically and / or controls the lower support platform 2 to move vertically according to the thickness of the silicon wafer, so that the distance between the upper support platform 1 and the lower support platform 2 is equal to the thickness of the silicon wafer, the first support surface is in contact with the upper surface of the silicon wafer, and the second support surface is in contact with the lower surface of the silicon wafer. Since the size of the first support surface is smaller than the size of the upper surface of the silicon wafer and the size of the second support surface is smaller than the size of the lower surface of the silicon wafer, the edge area of ​​the silicon wafer between the first support surface and the second support surface is exposed, thereby enabling etching of the exposed edge area of ​​the silicon wafer.

[0071] It should be noted that the upper surface and lower surface of the silicon wafer refer only to the surface that is above the wafer when the wafer is placed on the lower support platform.

[0072] In some embodiments, the silicon wafer edge etching apparatus further includes:

[0073] A nozzle is disposed at the edge of the silicon wafer and is used to spray etching solution onto the edge of the silicon wafer.

[0074] The etching solution can be a liquid containing hydrofluoric acid (HF).

[0075] The number of nozzles is one or more. When the number of nozzles is multiple, the multiple nozzles are evenly arranged on the edge of the silicon wafer so that the nozzles spray the etching solution evenly onto the edge of the silicon wafer.

[0076] In some embodiments, in order to ensure the stability of the silicon wafer and facilitate its transfer and movement, the lower support platform 2 fixes the silicon wafer by vacuum adsorption.

[0077] In some embodiments, the upper support platform 1 and the lower support platform 2 are coaxially arranged;

[0078] The central axis of the silicon wafer 3 is located on the axis of the upper support platform 1 and the lower support platform 2.

[0079] That is, when the silicon wafer 3 is located above the lower support platform, the center lines of the upper support platform 1, the silicon wafer 3 and the lower support platform 2 are on the same straight line, ensuring that the centers of the upper support platform 1, the silicon wafer 3 and the lower support platform 2 are aligned, so that the upper support platform 1 and the lower support platform 2 cover the silicon wafer 3 uniformly, and make the exposed edge area of ​​the silicon wafer 3 a uniform ring, ensuring that the etching of the edge of the silicon wafer is uniform.

[0080] In some embodiments, in order to prevent the etching solution from entering the internal area that does not need to be etched when etching the edge of the silicon wafer, a sealing ring is provided on the edge of the first bearing surface and a sealing ring is provided on the edge of the second bearing surface, that is, the sealing ring prevents the etching solution from flowing into the interior of the silicon wafer surface.

[0081] like Figure 2 As shown, this embodiment of the invention also provides a silicon wafer edge etching method, applied to the silicon wafer edge etching equipment as described in any of the above-mentioned embodiments, the method comprising:

[0082] Step 201: Obtain the thickness of the silicon wafer;

[0083] Step 202: Place the silicon wafer on the side of the lower support platform facing the upper support platform, that is, place the silicon wafer above the lower support platform; wherein the upper support platform and the lower support platform are arranged opposite each other in the vertical direction.

[0084] Step 203: Control the upper support platform to move vertically and / or control the lower support platform to move vertically according to the thickness, so that the distance between the upper support platform and the lower support platform is equal to the thickness of the silicon wafer.

[0085] Through the above steps, the surfaces of the upper support platform and the silicon wafer, and the surfaces of the lower support platform and the silicon wafer, are in just contact (or, critical contact between the upper support platform and the silicon wafer, where the upper support platform does not exert pressure on the lower support platform through the silicon wafer). At this point, there is no excessive pressure between the upper support platform and the silicon wafer, or between the lower support platform and the silicon wafer. By controlling the up-and-down movement of the upper and lower support platforms, the pressure between the upper and lower support platforms and the silicon wafer can be better controlled, avoiding excessive pressure between the upper and lower support platforms and the silicon wafer, which could cause the silicon wafer to fragment or be damaged. This further avoids the impact of fragments on the silicon wafer edge etching equipment, preventing downtime of the silicon wafer edge etching equipment and the resulting high maintenance costs. However, in this case, the upper and lower support platforms can also fix the silicon wafer, preventing it from shifting during subsequent processing. Furthermore, the upper support platform can cover areas on the upper surface of the silicon wafer that do not need to be etched, preventing these areas from being etched.

[0086] In some embodiments, obtaining the thickness of the silicon wafer includes:

[0087] The thickness of the silicon wafer is detected using a thickness detection component;

[0088] Obtain the thickness of the silicon wafer sent by the thickness detection component;

[0089] The thickness detection component is located on the side of the upper support platform and the lower support platform.

[0090] As an optional implementation, the thickness measurement component uses the capacitance voltage method to measure the thickness values ​​of multiple measurement points on any line of the silicon wafer, and takes the average of the thickness values ​​corresponding to the multiple measurement points as the thickness of the silicon wafer. The thickness of the silicon wafer obtained by the above method is more accurate.

[0091] In some embodiments, before placing the silicon wafer on the side of the lower support platform facing the upper support platform, the method further includes:

[0092] Control the lower support platform to be at a first preset height, and control the upper support platform to be at a second preset height;

[0093] Wherein, the second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

[0094] That is, before placing the silicon wafer above the lower support platform, or as can be understood as after processing the previous silicon wafer using the silicon wafer edge etching equipment provided in this embodiment, the lower support platform is restored to a first preset height, and the upper support platform is restored to a second preset height (also known as a reset operation). Then, the silicon wafer is placed above the lower support platform, and subsequent operations are performed to control the vertical movement of the upper support platform and / or the vertical movement of the lower support platform based on the thickness of the silicon wafer. Furthermore, after the silicon wafer processing is completed, it is also necessary to restore the lower support platform to the first preset height and the upper support platform to the second preset height.

[0095] The height difference between the first preset height and the second preset height is as large as possible than the thickness of the silicon wafer, so as to facilitate the placement of the silicon wafer on the lower support platform.

[0096] In some embodiments, controlling the upper support platform to move vertically and / or controlling the lower support platform to move vertically based on the thickness includes:

[0097] The moving distance is determined based on the height difference and the thickness of the silicon wafer. Specifically, the moving distance can be obtained by subtracting the thickness of the silicon wafer from the height difference. This moving distance is the sum of the distances that the upper support platform and / or the lower support platform move in the vertical direction.

[0098] Then, perform at least one of the following:

[0099] Control the upper support platform to move downward by the specified distance in the vertical direction, that is, control the upper support platform to move downward by the specified distance while only controlling the upper support platform to move in the vertical direction, so that the upper support platform contacts the surface of the silicon wafer;

[0100] Controlling the lower support platform to move upward by the specified distance in the vertical direction, that is, controlling the lower support platform to move upward by the specified distance while only controlling the lower support platform to move in the vertical direction, so that the lower support platform drives the silicon wafer to move upward, so that the surface of the silicon wafer contacts the upper support platform;

[0101] The upper support platform is controlled to move downwards a first distance in the vertical direction, and the lower support platform is controlled to move upwards a second distance in the vertical direction. The moving distance is equal to the sum of the first and second distances. While both the upper and lower support platforms are moving vertically, the upper support platform is controlled to move downwards a first distance, and the lower support platform is controlled to move upwards a second distance, so that the surface of the silicon wafer contacts the upper support platform. Optionally, both the first and second distances are half of the moving distance.

[0102] It should be noted that the silicon wafer edge etching method provided in the embodiments of the present invention is applied to the silicon wafer edge etching equipment as described above. Therefore, all embodiments of the silicon wafer edge etching equipment described above are applicable to the silicon wafer edge etching method and can achieve the same or similar technical effects.

[0103] The above description represents the preferred embodiments of the present invention. It should be noted that those skilled in the art can make various improvements and modifications without departing from the principles of the present invention, and these improvements and modifications should also be considered within the scope of protection of the present invention.

Claims

1. A silicon wafer edge etching apparatus, characterized in that, include: An upper support platform and a lower support platform are arranged opposite each other in the vertical direction. The silicon wafer is located on the side of the lower support platform facing the upper support platform. The upper support platform is movable in the vertical direction and / or the lower support platform is movable in the vertical direction. A controller, connected to the upper support platform and / or the lower support platform, is used to obtain the thickness of the silicon wafer and control the upper support platform to move vertically and / or control the lower support platform to move vertically according to the thickness, so that the distance between the upper support platform and the lower support platform is equal to the thickness of the silicon wafer; The silicon wafer edge etching equipment further includes a thickness detection component, which is disposed on the side of the upper support platform and the lower support platform, and is connected to the controller; the thickness detection component is used to detect the thickness of the silicon wafer and send the thickness of the silicon wafer to the controller; Wherein, the size of the first bearing surface of the upper bearing platform facing the silicon wafer is smaller than the size of the upper surface of the silicon wafer, and the size of the second bearing surface of the lower bearing platform facing the silicon wafer is smaller than the size of the lower surface of the silicon wafer, and the edge of the silicon wafer is exposed through the first bearing surface and the second bearing surface; The silicon wafer edge etching device further includes a nozzle, which is disposed at the edge of the silicon wafer and is used to spray etching liquid onto the edge of the silicon wafer.

2. The silicon wafer edge etching apparatus according to claim 1, characterized in that, Before placing the silicon wafer on the side of the lower support platform facing the upper support platform, the controller is further configured to control the lower support platform to be at a first preset height and control the upper support platform to be at a second preset height, wherein the second preset height is higher than the first preset height, and the height difference between the first preset height and the second preset height is greater than the thickness of the silicon wafer.

3. The silicon wafer edge etching apparatus according to claim 2, characterized in that, The controller is specifically used to determine the moving distance based on the height difference and the thickness of the silicon wafer; Furthermore, the controller is also specifically used for at least one of the following: Control the upper support platform to move downwards by the specified distance in the vertical direction; Control the lower support platform to move upward by the specified distance in the vertical direction; The upper support platform is controlled to move downwards a first distance in the vertical direction, and the lower support platform is controlled to move upwards a second distance in the vertical direction, wherein the moving distance is equal to the sum of the first distance and the second distance.

4. The silicon wafer edge etching apparatus according to claim 1, characterized in that, The lower support platform fixes the silicon wafer by vacuum adsorption.

5. The silicon wafer edge etching apparatus according to claim 1, characterized in that, The upper support platform and the lower support platform are coaxially arranged; The central axis of the silicon wafer is located on the axis of the upper support platform and the lower support platform.

6. The silicon wafer edge etching apparatus according to claim 5, characterized in that, A sealing ring is provided on the edge of the first bearing surface; A sealing ring is provided on the edge of the second bearing surface.

7. A method for etching the edge of a silicon wafer, characterized in that, The method, applied to the silicon wafer edge etching apparatus as described in any one of claims 1-6, comprises: To obtain the thickness of the silicon wafer; The silicon wafer is placed on the side of the lower support platform facing the upper support platform; The upper support platform is moved vertically and / or the lower support platform is moved vertically according to the thickness, so that the distance between the upper support platform and the lower support platform is equal to the thickness of the silicon wafer. Etching fluid is sprayed onto the edge of the silicon wafer through a nozzle; The upper support platform and the lower support platform are arranged opposite each other in the vertical direction.

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