Semiconductor multi-stack parallel deposition machine table

Abstract

The invention relates to the technical field of semiconductor equipment, in particular to a semiconductor multi-stack parallel deposition machine table. The invention provides a semiconductor multi-stack parallel deposition machine table which comprises a transmission chamber and a plurality of process chambers, wherein the transmission chamber is used for transferring wafers between the transmission chamber and the process chambers and transmitting the wafers among stacks in the process chambers; each process chamber is provided with a plurality of groups of stacks for carrying out a deposition process on a plurality of wafers which are conveyed into the process chamber; wherein each group of stacks consists of at least two independent stacks, each stack is used for accommodating one wafer, and a specific stage in a deposition process flow is independently executed on the respectively accommodated wafer in parallel. According to the semiconductor multi-stack parallel deposition machine table, two wafers can be transmitted at the same time, the productivity of a process chamber in unit time is effectively improved, and meanwhile it can be guaranteed that quality parameters of wafers subjected to thin film deposition in the same batch are consistent.

Description

Technical Field

[0001] The present invention mainly relates to the technical field of semiconductor equipment, and in particular to a semiconductor multi-stack parallel deposition machine. Background Art

[0002] With the continuous development of integrated circuit technology, the size of MOSFET devices continues to shrink, which puts higher requirements on the selection of interconnect materials and contact metals. Especially in terms of the resistivity of metal materials, metal molybdenum (Mo) has become an ideal material to replace copper (Cu) and tungsten (W) in advanced interconnects due to its low resistivity and short mean free path, as well as low sensitivity to surface and grain boundary scattering.

[0003] However, the deposition process of molybdenum is relatively complicated and usually requires multiple chemical reaction steps. The temperatures, pressures, gas flows and types required for these reactions vary, resulting in many technological challenges in the growth process of molybdenum.

[0004] Existing ALD (atomic layer deposition) molybdenum deposition equipment usually has low production capacity, and a single process can only process one or two wafers, and the process time is relatively long, which seriously affects the output per unit time. A single PM chamber often adopts a 2STN (stack) or 4STN structure. The 2STN chamber needs to complete the growth of batches of molybdenum in a single STN, and the process requires heating, which takes a long time and affects production capacity. In the 4STN chamber, since the robot can only transfer one wafer at a time, the production capacity per unit time is still relatively low. Therefore, how to improve the production capacity of the molybdenum deposition process has become a key issue facing current technology. Summary of the invention

[0005] The purpose of the present invention is to provide a semiconductor multi-stack parallel deposition machine to solve the technical problem that the existing deposition machine can only process a small number of wafers in a single process and the process time is long, resulting in low production capacity per unit time in the process chamber.

[0006] In order to achieve the above-mentioned object, the present invention provides a semiconductor multi-stack parallel deposition machine, including a transfer chamber and a plurality of process chambers:

[0007] The transfer chamber is used for transferring wafers between the transfer chamber and the process chamber;

[0008] Each process chamber is configured with a number of stacks to perform deposition processes on multiple wafers transmitted into it;

[0009] Each stack group consists of at least two independent stacks, each stack is used to accommodate a wafer, and specific stages of the deposition process flow are performed on the wafers accommodated in each stack in parallel and independently.

[0010] In one embodiment, the specific stages of the deposition process flow include a first stage, a second stage, and a third stage:

[0011] Each process chamber includes three groups of stacks, namely a first group of stacks, a second group of stacks and a third group of stacks:

[0012] The first set of stacks is used to perform a first stage of a deposition process flow;

[0013] The second set of stacks is used to perform a second stage of the deposition process flow;

[0014] The third stack is used to perform the third stage of the deposition process.

[0015] In one embodiment, the first robot of the transfer chamber transfers a first group of wafers to a first group of stacks to perform a first stage of a deposition process, wherein the number of wafers in the first group corresponds to the number of independent stacks in each group of stacks;

[0016] After the first stage is completed, the first set of wafers is transferred to the second set of stacks to perform the second stage of the deposition process flow;

[0017] After the second stage is completed, the first set of wafers is transferred to the third set of stacks to perform the third stage of the deposition process flow;

[0018] After the third stage is completed, the first group of wafers is transferred to the first group of stacks, and the first robot of the transfer chamber transfers the first group of wafers to the transfer chamber via the first group of stacks.

[0019] In one embodiment, the specific stages of the deposition process flow include a first stage, a second stage, and a third stage:

[0020] Each process chamber includes four groups of stacks, namely a first group of stacks, a second group of stacks, a third group of stacks and a fourth group of stacks:

[0021] The first set of stacks is used to perform a first stage of a deposition process flow;

[0022] The second set of stacks is used to perform a second stage of the deposition process flow;

[0023] The third stack is used to perform the third stage of the deposition process;

[0024] The fourth stack is used to perform the third stage of the deposition process.

[0025] In one embodiment, the first robot of the transfer chamber transfers a first group of wafers to a first group of stacks to perform a first stage of a deposition process, wherein the number of wafers in the first group corresponds to the number of independent stacks in each group of stacks;

[0026] After the first stage of the first set of wafers is completed, the first set of wafers is transferred to the second set of stacks to perform the second stage of the deposition process flow;

[0027] After the second stage of the first set of wafers is completed, the first set of wafers is transferred to the third set of stacks to perform the third stage of the deposition process flow;

[0028] After the third stage of the first group of wafers is completed, the first group of wafers is transferred to the first group of stacks, and the first robot of the transfer chamber transfers the first group of wafers to the transfer chamber via the first group of stacks.

[0029] In one embodiment, after the first stage of the first group of wafers is completed, the robot of the transfer chamber transfers the second group of wafers to the first group of stacks to perform the first stage of the deposition process, and the number of the second group of wafers corresponds to the number of the first group of wafers;

[0030] After the first stage of the second group of wafers is completed, the second group of wafers is transferred to the second group of stacks to perform the second stage of the deposition process flow;

[0031] After the second stage of the second set of wafers is completed, the second set of wafers is transferred to the fourth set of stacks to perform the third stage of the deposition process flow;

[0032] After the third stage of the second group of wafers is completed, the second group of wafers are transferred to the first group of stacks, and the first robot of the transfer chamber transfers the second group of wafers to the transfer chamber via the first group of stacks.

[0033] In one embodiment, the transfer chamber is located at the center of the plurality of process chambers.

[0034] In one embodiment, the device further includes a front-end module connected to the transfer chamber, for receiving wafers processed by the transfer chamber and providing wafers to be processed to the transfer chamber.

[0035] In one embodiment, the deposition process performed in each process chamber includes a molybdenum deposition process;

[0036] The specific stages of the deposition process flow include the first stage, the second stage and the third stage:

[0037] The first stage includes depositing a molybdenum nitride layer on the surface of the wafer as a wafer substrate;

[0038] The second stage includes converting the molybdenum nitride layer into a metallic molybdenum layer by processing, and depositing bulk molybdenum to a certain thickness;

[0039] The third stage includes continuing to deposit bulk molybdenum until a metallic molybdenum layer of a desired thickness is formed.

[0040] In one embodiment, the deposition process performed in each process chamber includes a tungsten deposition process;

[0041] The specific stages of the deposition process flow include the first stage, the second stage and the third stage:

[0042] The first stage includes a nucleation reaction to deposit a tungsten film on the surface of the wafer as a wafer substrate;

[0043] The second stage includes depositing a tungsten film to a certain thickness;

[0044] The third stage includes continuing to deposit bulk tungsten until a metallic tungsten layer of a desired thickness is formed.

[0045] The semiconductor multi-stack parallel deposition machine proposed in the present invention can process multiple wafer process steps at the same time, greatly reducing waiting time and improving deposition efficiency and production capacity. BRIEF DESCRIPTION OF THE DRAWINGS

[0046] In order to make the above-mentioned objects, features and advantages of the present invention more clearly understood, the specific embodiments of the present invention are described in detail below in conjunction with the accompanying drawings, wherein:

[0047] Figure 1 A schematic diagram of a semiconductor 2-stack deposition machine is disclosed;

[0048] Figure 2 A schematic diagram of a semiconductor 4-stack deposition machine is disclosed;

[0049] Figure 3 A schematic diagram of a semiconductor multi-stack parallel deposition machine according to an embodiment of the present invention is disclosed;

[0050] Figure 4 A schematic diagram of the operation flow of a semiconductor multi-stack parallel deposition machine according to an embodiment of the present invention is disclosed;

[0051] Figure 5 A schematic diagram of the operation flow of a semiconductor multi-stack parallel deposition machine according to another embodiment of the present invention is disclosed.

[0052] The meanings of the reference numerals in the figures are as follows:

[0053] 10 stacks;

[0054] 11. First manipulator;

[0055] 12 process chambers;

[0056] 13. Transmission chamber;

[0057] 14 second manipulator;

[0058] 121 a first process chamber;

[0059] 122 a second process chamber;

[0060] 123 A third process chamber. DETAILED DESCRIPTION

[0061] In order to make the above-mentioned objects, features and advantages of the present invention more obvious and easy to understand, the specific embodiments of the present invention are described in detail below with reference to the accompanying drawings.

[0062] In the following description, many specific details are set forth to facilitate a full understanding of the present invention. However, the present invention may also be implemented in other ways different from those described herein. Therefore, the present invention is not limited to the specific embodiments disclosed below.

[0063] As shown in this application and claims, unless the context clearly indicates an exception, the words "a", "an", "an" and / or "the" do not refer to the singular and may also include the plural. Generally speaking, the terms "include" and "comprise" only indicate the inclusion of the steps and elements that have been clearly identified, and these steps and elements do not constitute an exclusive list. The method or device may also include other steps or elements.

[0064] Figure 1 A schematic diagram of a semiconductor 2-stack deposition machine is disclosed, such as Figure 1 As shown, a semiconductor 2-stack deposition machine is a single reaction chamber layout with 2 STN (station, stack), wherein a first robot 11 transfers the wafer between the transfer chamber 13 and the process chamber.

[0065] Among them, the 2-stack deposition machine usually transfers two wafers at a time and completes the main process steps on a single STN, as follows:

[0066] The first stage is the first step in the growth of molybdenum materials. A layer of molybdenum nitride (oxygen) film is formed on the substrate. This film serves as the basis for subsequent steps and plays a lining or protective role.

[0067] Phase 2: In the ALD reaction, the temperature of the reactor needs to be gradually raised to a specific reaction temperature. This process takes 40 minutes and needs to be filled with hydrogen (H 2 ) for a period of time (about 60 seconds) to remove impurities on the surface of the substrate or promote subsequent chemical reactions.

[0068] The third stage: depositing a large amount of molybdenum material to form a bulk material of molybdenum.

[0069] Although the robot can transfer two wafers at a time, each STN needs to go through a heating process to complete the reaction at different stages, that is, heating takes a long time, so the whole process time is longer, resulting in lower production capacity.

[0070] Figure 2 A schematic diagram of a semiconductor 4-stack deposition machine is disclosed, such as Figure 2 As shown, a semiconductor 4-stack deposition machine is a single reaction chamber layout with 4 STN (station, stack). The transfer of a single wafer by the deposition machine of the 4STN structure is determined by the process. The whole process includes 3 steps, as follows:

[0071] Stage 1: STN1 liner process: MoO 2 Cl 2 +NH 3 +H 2 >>Mo x O y N z +H 2 O+HCl, where STN1liner process (substrate generation) is the reaction equation of the first stage. This process is to deposit a molybdenum nitride layer on the surface of the wafer as a wafer substrate. This film serves as the basis for subsequent steps and plays a lining or protective role.

[0072] The second stage: STN2 / 3liner conversion: Mo x O y N z +H 2 +MoO 2 Cl 2 >>Mo+H 2 O+HCl+NO, where STN2 / 3liner conversion (substrate conversion) is the reaction equation of the second stage. This process is to convert the molybdenum nitride layer into a metallic molybdenum layer and deposit bulk molybdenum to a certain thickness to prepare for subsequent material growth.

[0073] Among them, the second stage is the reaction of the wafer from the second stack (STN2) to the third stack (STN3), that is, the robot only transfers one wafer at a time.

[0074] Phase 3: STN4 Mo Bulk depo:MoO 2 Cl 2 +H 2 >>Mo+H 2O+HCl, wherein STN4 Mo Bulkdepo (the main part of the molybdenum film) is the reaction equation of the third stage. This process is to continue to deposit bulk molybdenum until a metallic molybdenum layer of the required thickness is formed, that is, the bulk material of molybdenum.

[0075] Combination Figure 1 and Figure 2 , the manipulators of the 2-stack deposition machine and the 4-stack deposition machine are different. Although the 4-stack deposition machine can process more wafers than the 2-stack deposition machine, it only transfers a single wafer at a time, resulting in the need to process each wafer in sequence. Therefore, per unit time, the capacity improvement of the 4-stack deposition machine is limited, and the transmission speed and efficiency have not been significantly improved. Both layouts face bottlenecks in capacity improvement in a single chamber design.

[0076] The present invention proposes a semiconductor multi-stack parallel deposition machine, comprising a transfer chamber and a plurality of process chambers:

[0077] The transfer chamber is used for transferring wafers between the transfer chamber and the process chamber, and for transferring wafers between stacks inside the process chamber;

[0078] Each process chamber is configured with a number of stacks to perform deposition processes on multiple wafers transmitted into it;

[0079] Each stack group consists of at least two independent stacks, each stack is used to accommodate a wafer, and specific stages of the deposition process flow are performed on the wafers accommodated in each stack in parallel and independently.

[0080] The device also includes a front-end module connected to the transfer chamber, which is used to receive wafers processed by the transfer chamber and provide wafers to be processed to the transfer chamber.

[0081] The transfer chamber is located at the center of the plurality of process chambers.

[0082] The semiconductor multi-stack parallel deposition machine proposed in the present invention can transfer two wafers at the same time, realizing parallel processing of wafers. Multiple wafers can be processed simultaneously at different stack positions, and the production capacity of the process chamber per unit time is effectively improved. At the same time, the quality parameters of the same batch of wafers undergoing thin film deposition can be guaranteed to be consistent.

[0083] Figure 3 A schematic diagram of a semiconductor multi-stack parallel deposition apparatus according to an embodiment of the present invention is disclosed. Figure 3 As shown, the multi-stack parallel deposition machine may include a transfer chamber 13 and three process chambers, namely a first process chamber 121 , a second process chamber 122 , and a third process chamber 123 , each of which has six stacks 10 .

[0084] The first robot 11 inside the transfer chamber 13 transfers the wafer between the transfer chamber 13 and the process chamber, and the second robot 14 inside the process chamber is used to transfer between the stacks 10 inside the process chamber, wherein each process chamber is provided with a second robot 14;

[0085] Each process chamber is configured with a number of stacks to perform deposition processes on multiple wafers transmitted into it;

[0086] Each stack group consists of two independent stacks, each stack is used to accommodate a wafer, and specific stages of the deposition process flow are performed on the wafers accommodated in each stack in parallel and independently.

[0087] In one embodiment, each PM (process module) has 6 stacks, which are divided according to different process steps:

[0088] STN1 and STN2: used to grow MoN liner, where MoN liner is the MoN substrate film generated by the first stage reaction.

[0089] STN3 and STN4: used to complete the reaction of MoN liner to Mo and deposit a portion of bulk Mo.

[0090] STN5 and STN6: Continue to deposit bulk Mo to the required thickness.

[0091] In one embodiment, the specific stages of the deposition process flow include a first stage, a second stage, and a third stage:

[0092] In one embodiment, the deposition process performed in each process chamber includes a molybdenum deposition process;

[0093] The specific stages of the deposition process flow include the first stage, the second stage and the third stage:

[0094] The first stage includes depositing a molybdenum nitride layer on the surface of the wafer as a wafer substrate;

[0095] The second stage includes converting the molybdenum nitride layer into a metallic molybdenum layer by processing, and depositing bulk molybdenum to a certain thickness;

[0096] The third stage includes continuing to deposit bulk molybdenum until a metallic molybdenum layer of a desired thickness is formed.

[0097] The reaction equation of the first stage is: MoO 2 Cl 2 +NH 3 +H 2 >>Mo x Oy N z +H 2 O + HCl;

[0098] In the first stage, MoO 2 Cl 2 (Molybdenum oxychloride) and NH 3 (ammonia) and H 2 (Hydrogen) reacts together to form a molybdenum nitride layer containing molybdenum, oxygen and nitrogen.

[0099] This reaction forms a MoN layer on the wafer surface and releases H as a byproduct. 2 O and HCl. The MoN layer can serve as a wafer substrate layer, improving the adhesion of the material to subsequent Mo layers while preventing diffusion.

[0100] The reaction equation of the second stage is: Mo x O y N z +H 2 +MoO 2 Cl 2 >>Mo+H 2 O+HCl+NO;

[0101] In the second stage, the MoN layer is bonded with H 2 and MoO 2 Cl 2 Treat together to convert MoN to Mo.

[0102] During this process, nitrogen and oxygen in the MoN layer are gradually removed and converted into a pure molybdenum (Mo) layer.

[0103] This reaction generates a byproduct H 2 O, HCl and NO (nitric oxide), gradually converting the MoN layer into metallic molybdenum.

[0104] The reaction equation of the third stage is: MoO 2 Cl 2 +H 2 >>Mo+H 2 O+HCl.

[0105] In the third stage, MoO 2 Cl 2 and H 2 A further molybdenum layer is deposited.

[0106] This reaction deposits bulk Mo directly on the wafer surface and produces H as a byproduct. 2 O and HCl.

[0107] This process builds up the thickness of the Mo layer to reach the final thickness required by the process, completing the deposition of bulk Mo.

[0108] In another embodiment, the deposition process performed by each process chamber includes a tungsten deposition process;

[0109] The specific stages of the deposition process flow include the first stage, the second stage and the third stage:

[0110] The first stage includes a nucleation reaction to deposit a tungsten film on the surface of the wafer as a wafer substrate;

[0111] The second stage includes depositing a tungsten film to a certain thickness;

[0112] The third stage includes continuing to deposit bulk tungsten until a metallic tungsten layer of a desired thickness is formed.

[0113] The reaction equation of the first stage is: WF 6 +SiH 4 →W+SiF 4 +H 2 or WF 6 +B 2 H 6 →W+BF 3 +H 2 .

[0114] The first stage includes a nucleation reaction, which ensures the uniform growth of the main part of the W (tungsten) film and determines the resistivity of the W film through the grain structure size.

[0115] Specifically, the type of the introduced reaction gas is determined by the thickness of the growing W film.

[0116] The reaction equation of the second stage is: WF 6 +H 2 →W+HF.

[0117] The second stage includes: completing the deposition reaction of the main part of the W film to generate a W film to a certain thickness.

[0118] Among them, the reaction equation of the third stage is: WF 6 +H 2 →W+HF.

[0119] The third stage includes: continuing to deposit W on the wafer surface to a desired thickness.

[0120] In this embodiment, the first group of wafers is transferred to the first group of stacks by the first robot 11 , and after the first group of stacks completes the first stage reaction, it is transferred to the second group of stacks by the second robot 14 to complete the second stage reaction.

[0121] After the first group of wafers complete the second stage reaction in the second group of stacks, the second robot 14 transfers them to the third group of stacks to complete the third stage reaction.

[0122] After the first group of wafers complete the third stage reaction in the third group of stacks, the second robot 14 transfers them to the first group of stacks. The first robot 11 of the transfer chamber 13 transfers the first group of wafers to the transfer chamber 13 via the first group of stacks.

[0123] It is worth noting that, in addition to the above two embodiments, other similar processes may also be included.

[0124] Figure 4 The schematic diagram of the operation flow of a semiconductor multi-stack parallel deposition machine according to an embodiment of the present invention is disclosed. Figure 4 As shown, each process chamber includes three groups of stacks, namely a first group of stacks, a second group of stacks and a third group of stacks:

[0125] The first set of stacks is used to perform a first stage of a deposition process flow;

[0126] The second set of stacks is used to perform a second stage of the deposition process flow;

[0127] The third stack is used to perform the third stage of the deposition process.

[0128] Among them, the first group of stacks is STN1 / 2, the second group of stacks is STN3 / 4, and the third group of stacks is STN5 / 6.

[0129] In one embodiment, the first robot of the transfer chamber transfers a first group of wafers to a first group of stacks to perform a first stage of a deposition process, wherein the number of the first group of wafers is the same as the number of independent stacks in each group of stacks, i.e., 2;

[0130] After the first stage is completed, the first set of wafers is transferred to the second set of stacks to perform the second stage of the deposition process flow;

[0131] After the second stage is completed, the first set of wafers is transferred to the third set of stacks to perform the third stage of the deposition process flow;

[0132] After the third stage is completed, the first group of wafers is transferred to the first group of stacks, and the first robot of the transfer chamber transfers the first group of wafers to the transfer chamber via the first group of stacks.

[0133] In this embodiment, the first robot 11 of the transfer chamber (TM) transfers the first group of wafers to the first group of stacks STN1 / 2 for performing the first stage of the deposition process, in which the growth of MoN liner begins, and a molybdenum nitride layer is deposited on the surface of the wafer to serve as a wafer substrate.

[0134] The reaction equation of the first stage is: MoO 2 Cl 2 +NH 3 +H 2 >>Mo x O y N z +H 2 O+HCl.

[0135] The second robot 14 transfers the wafer from the first stack STN1 / 2 to the second stack STN3 / 4 to perform the second stage of the deposition process. This stage completes the reaction of MoN liner to Mo (molybdenum) and begins to deposit bulk Mo, specifically, converting the molybdenum nitride layer into a metallic molybdenum layer and depositing bulk molybdenum to a certain thickness.

[0136] Among them, the reaction equation of the second stage is: Mo x O y N z +H 2 +MoO 2 Cl 2 >>Mo+H 2 O+HCl+NO.

[0137] After the deposition on STN3 / 4 reaches a certain thickness, the second robot 14 transfers the wafer from the second stack STN3 / 4 to the third stack STN5 / 6 for executing the third stage of the deposition process, in which bulk Mo is continuously deposited until a metal molybdenum layer of the required thickness is formed.

[0138] Among them, the reaction equation of the third stage is: MoO 2 Cl 2 +H 2 >>Mo+H 2 O+HCl.

[0139] In this embodiment, after all deposition steps are completed, the second robot 14 transfers the wafer from STN5 / 6 back to STN1 / 2, and the first robot 11 transfers it back to TM, completing a process cycle. Compared with the traditional single wafer in and out method, this embodiment realizes the simultaneous in and out of two wafers, significantly shortening the number of transfers per unit time, and effectively improving the production capacity per unit time of the process chamber (PM).

[0140] Figure 5 A schematic diagram of the operation flow of a semiconductor multi-stack parallel deposition machine according to another embodiment of the present invention is disclosed. Figure 5 As shown, each process chamber includes 4 groups of stacks, namely, a first group of stacks, a second group of stacks, a third group of stacks and a fourth group of stacks:

[0141] The first set of stacks is used to perform a first stage of a deposition process flow;

[0142] The second set of stacks is used to perform a second stage of the deposition process flow;

[0143] The third stack is used to perform the third stage of the deposition process;

[0144] The fourth stack is used to perform the third stage of the deposition process.

[0145] Each PM has 8 STNs, the first stack is STN1 / 2, the second stack is STN3 / 4, the third stack is STN5 / 6, and the fourth stack is STN7 / 8. Specifically, STN1 / 2 is used to grow MoN liner, and STN3 / 4, STN5 / 6, and STN7 / 8 are used to deposit bulk Mo.

[0146] In one embodiment, the first robot 11 of the transfer chamber transfers the first group of wafers to the first group of stacks to perform the first stage of the deposition process, and the number of the first group of wafers is the same as the number of independent stacks in each group of stacks, that is, 2;

[0147] After the first stage of the first set of wafers is completed, the first set of wafers is transferred to the second set of stacks to perform the second stage of the deposition process flow;

[0148] After the second stage of the first set of wafers is completed, the first set of wafers is transferred to the third set of stacks to perform the third stage of the deposition process flow;

[0149] After the third stage of the first group of wafers is completed, the first group of wafers is transferred to the first group of stacks, and the first robot of the transfer chamber transfers the first group of wafers to the transfer chamber via the first group of stacks.

[0150] After the first stage of the first set of wafers is completed, the first robot of the transfer chamber transfers the second set of wafers to the first set of stacks to perform the first stage of the deposition process;

[0151] After the first stage of the second group of wafers is completed, the second group of wafers is transferred to the second group of stacks to perform the second stage of the deposition process, and the number of the second group of wafers is the same as that of the first group of wafers;

[0152] After the second stage of the second set of wafers is completed, the second set of wafers is transferred to the fourth set of stacks to perform the third stage of the deposition process flow;

[0153] After the third stage of the second group of wafers is completed, the second group of wafers are transferred to the first group of stacks, and the first robot of the transfer chamber transfers the second group of wafers to the transfer chamber via the first group of stacks.

[0154] In this embodiment, the first robot in the TM transfers the first group of wafers to the STN1 / 2 to perform the first stage of the deposition process flow for growing MoN liner.

[0155] After the first stage of the first group of wafers is completed, the second robot 14 transfers the first group of wafers from STN1 / 2 to STN3 / 4 to perform the second stage of the deposition process to complete the reaction of MoN liner to Mo; at the same time, the second robot 14 transfers the second group of wafers to STN1 / 2 to perform the first stage of the deposition process to grow MoN liner.

[0156] After the second stage of the first group of wafers is completed, that is, the first group of wafers completes the preliminary bulk Mo deposition on STN3 / 4 and reaches a certain thickness, the second robot 14 transfers the first group of wafers to STN5 / 6 for continued deposition to perform the third stage of the deposition process; at the same time, after the first stage of the second group of wafers is completed, the second robot 14 transfers the second group of wafers from STN1 / 2 to STN3 / 4 to perform the second stage of the deposition process, complete the reaction of MoN liner to Mo, and start bulk Mo deposition.

[0157] After the second stage of the second group of wafers is completed, the second robot 14 transfers the second group of wafers from STN3 / 4 to STN7 / 8 for performing the third stage of the deposition process flow to continue depositing bulk Mo to achieve the desired thickness.

[0158] After the third stage of the first group of wafers is completed, the second robot 14 transfers the first group of wafers from STN5 / 6 to STN1 / 2, and then the robot transfers them to TM.

[0159] After the third stage of the second group of wafers is completed, the second robot 14 transfers the second group of wafers from STN7 / 8 to STN1 / 2, and then the first robot 11 transfers them to TM, completing the entire process.

[0160] In this embodiment, by designing a semiconductor multi-stack parallel deposition machine, parallel processing of thin film deposition on multiple wafers is achieved, allowing multiple wafers to be processed at different STN positions within the same time period, ensuring the rational use of STN at different stages, thereby shortening the process waiting time, significantly improving production capacity, and ensuring that each wafer can complete the required deposition steps with the highest efficiency, reducing the transmission time and frequency of the robot.

[0161] The basic concepts have been described above. Obviously, for those skilled in the art, the above invention disclosure is only used as an example and does not constitute a limitation of the present application. Although not explicitly stated herein, those skilled in the art may make various modifications, improvements and amendments to the present application. Such modifications, improvements and amendments are suggested in the present application, so such modifications, improvements and amendments still belong to the spirit and scope of the exemplary embodiments of the present application.

[0162] At the same time, the present application uses specific words to describe the embodiments of the present application. For example, "one embodiment", "an embodiment", and / or "some embodiments" refer to a certain feature, structure or characteristic related to at least one embodiment of the present application. Therefore, it should be emphasized and noted that "one embodiment" or "an embodiment" or "an alternative embodiment" mentioned twice or more in different positions in this specification does not necessarily refer to the same embodiment. In addition, some features, structures or characteristics in one or more embodiments of the present application can be appropriately combined.

[0163] In some embodiments, numbers describing the number of components and attributes are used. It should be understood that such numbers used in the description of the embodiments are modified by the modifiers "about", "approximately" or "substantially" in some examples. Unless otherwise specified, "about", "approximately" or "substantially" indicate that the numbers are allowed to vary by ±20%. Accordingly, in some embodiments, the numerical parameters used in the specification and claims are approximate values, which may change according to the required features of individual embodiments. In some embodiments, the numerical parameters should take into account the specified significant digits and adopt the general method of retaining digits. Although the numerical domains and parameters used to confirm the breadth of their range in some embodiments of the present application are approximate values, in specific embodiments, the setting of such numerical values ​​is as accurate as possible within the feasible range.

Claims

1. A semiconductor multi-stack parallel deposition machine, characterized in that: Including transfer chamber and several process chambers: The transfer chamber is used for transferring wafers between the transfer chamber and the process chamber; Each process chamber is configured with a number of stacks to perform deposition processes on multiple wafers transmitted into it; Each group of stacks is composed of at least two independent stacks, each stack is used to accommodate a wafer, and specific stages of the deposition process flow are performed on the wafers accommodated in each stack in parallel and independently.

2. The semiconductor multi-stack parallel deposition machine according to claim 1, characterized in that: The specific stages of the deposition process flow include the first stage, the second stage and the third stage: Each process chamber includes three groups of stacks, namely a first group of stacks, a second group of stacks and a third group of stacks: The first set of stacks is used to perform a first stage of a deposition process flow; The second set of stacks is used to perform a second stage of the deposition process flow; The third stack is used to perform the third stage of the deposition process.

3. The semiconductor multi-stack parallel deposition machine according to claim 2, characterized in that: The first robot of the transfer chamber transfers the first group of wafers to the first group of stacks to perform the first stage of the deposition process, the number of the first group of wafers corresponding to the number of independent stacks in each group of stacks; After the first stage is completed, the first set of wafers is transferred to the second set of stacks to perform the second stage of the deposition process flow; After the second stage is completed, the first set of wafers is transferred to the third set of stacks to perform the third stage of the deposition process flow; After the third stage is completed, the first group of wafers is transferred to the first group of stacks, and the first robot of the transfer chamber transfers the first group of wafers to the transfer chamber via the first group of stacks.

4. The semiconductor multi-stack parallel deposition machine according to claim 1, characterized in that: The specific stages of the deposition process flow include the first stage, the second stage and the third stage: Each process chamber includes four groups of stacks, namely a first group of stacks, a second group of stacks, a third group of stacks and a fourth group of stacks: The first set of stacks is used to perform a first stage of a deposition process flow; The second set of stacks is used to perform a second stage of the deposition process flow; The third stack is used to perform the third stage of the deposition process; The fourth stack is used to perform the third stage of the deposition process.

5. The semiconductor multi-stack parallel deposition machine according to claim 4, characterized in that: The first robot of the transfer chamber transfers the first group of wafers to the first group of stacks to perform the first stage of the deposition process, the number of the first group of wafers corresponding to the number of independent stacks in each group of stacks; After the first stage of the first set of wafers is completed, the first set of wafers is transferred to the second set of stacks to perform the second stage of the deposition process flow; After the second stage of the first set of wafers is completed, the first set of wafers is transferred to the third set of stacks to perform the third stage of the deposition process flow; After the third stage of the first group of wafers is completed, the first group of wafers is transferred to the first group of stacks, and the first robot of the transfer chamber transfers the first group of wafers to the transfer chamber via the first group of stacks.

6. The semiconductor multi-stack parallel deposition machine according to claim 5, characterized in that: After the first stage of the first group of wafers is completed, the first robot of the transfer chamber transfers the second group of wafers to the first group of stacks to perform the first stage of the deposition process, and the number of the second group of wafers corresponds to the number of the first group of wafers; After the first stage of the second group of wafers is completed, the second group of wafers is transferred to the second group of stacks to perform the second stage of the deposition process flow; After the second stage of the second set of wafers is completed, the second set of wafers is transferred to the fourth set of stacks to perform the third stage of the deposition process flow; After the third stage of the second group of wafers is completed, the second group of wafers are transferred to the first group of stacks, and the first robot of the transfer chamber transfers the second group of wafers to the transfer chamber via the first group of stacks.

7. The semiconductor multi-stack parallel deposition machine according to claim 1, characterized in that: The transfer chamber is located at the center of the plurality of process chambers.

8. The semiconductor multi-stack parallel deposition machine according to claim 1, characterized in that: The device also includes a front-end module connected to the transfer chamber, which is used to receive wafers processed by the transfer chamber and provide wafers to be processed to the transfer chamber.

9. The semiconductor multi-stack parallel deposition machine according to claim 1, characterized in that: The deposition process performed in each process chamber includes a molybdenum deposition process; The specific stages of the deposition process flow include the first stage, the second stage and the third stage: The first stage includes depositing a molybdenum nitride layer on the surface of the wafer as a wafer substrate; The second stage includes converting the molybdenum nitride layer into a metallic molybdenum layer by processing, and depositing bulk molybdenum to a certain thickness; The third stage includes continuing to deposit bulk molybdenum until a metallic molybdenum layer of a desired thickness is formed.

10. The semiconductor multi-stack parallel deposition machine according to claim 1, characterized in that: The deposition process performed in each process chamber includes a tungsten deposition process; The specific stages of the deposition process flow include the first stage, the second stage and the third stage: The first stage includes a nucleation reaction to deposit a tungsten film on the surface of the wafer as a wafer substrate; The second stage includes depositing a tungsten film to a certain thickness; The third stage includes continuing to deposit bulk tungsten until a metallic tungsten layer of a desired thickness is formed.

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