High electron mobility transistor device and preparation method thereof

Abstract

The invention provides a high electron mobility transistor device and a manufacturing method thereof. The device includes a substrate, a channel layer on the substrate, a barrier layer on the channel layer, a source and a drain on the barrier layer, a stress modulation layer on the barrier layer, and a gate. The source electrode and the drain electrode extend in a first horizontal direction and face each other in a second horizontal direction intersecting the first horizontal direction. The gate electrode is located between the source electrode and the drain electrode in the second horizontal direction. The stress modulation layer is located between the source electrode and the drain electrode in the second horizontal direction. The stress modulation layer is an in-situ passivation layer having a stress modulation trench extending in a first horizontal direction and penetrating the stress modulation layer in a vertical direction. The widths of the stress modulation grooves in the second horizontal direction are different at different positions in the first horizontal direction. At least a portion of the gate is filled in the stress modulation trench.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor technology, and in particular to a high electron mobility transistor (HEMT) device based on stress modulation. Background Art

[0002] As the third generation of wide bandgap compound semiconductor devices, HEMT devices (especially GaN HEMT devices) have significant performance advantages in the millimeter wave field and have broad application prospects in the fields of large-capacity ultra-high-speed mobile communications, high-resolution imaging radar, and confidential communications. However, while achieving higher application frequencies, the linearity problem of the device has become increasingly serious. Summary of the invention

[0003] In one aspect, a HEMT device is provided, comprising: a substrate; a channel layer located on the substrate; a barrier layer located on the channel layer; a source and a drain, the source and the drain are located on the barrier layer, extend in a first horizontal direction, and are opposite to each other in a second horizontal direction intersecting the first horizontal direction; a stress modulation layer is located on the barrier layer and is located between the source and the drain in a second horizontal direction; and a gate is located between the source and the drain in the second horizontal direction. The stress modulation layer is an in-situ passivation layer and has a stress modulation trench, the stress modulation trench extends in the first horizontal direction and penetrates the stress modulation layer in a vertical direction, and at different positions in the first horizontal direction, the width of the stress modulation trench in the second horizontal direction is different, and at least a portion of the gate is filled in the stress modulation trench.

[0004] On the other hand, a method for manufacturing a HEMT device is provided, comprising: epitaxially growing a channel layer, a barrier layer and a stress modulation material layer on a substrate in sequence to form an epitaxial structure including the substrate, the channel layer, the barrier layer and the stress modulation material layer; forming a source and a drain on the epitaxial structure; forming a stress modulation groove penetrating the stress modulation material layer in the stress modulation material layer to obtain the stress modulation layer, wherein the stress modulation groove has different widths at different positions in the extension direction of the source and the drain; and forming a gate corresponding to the stress modulation groove. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The above and other features and advantages of the exemplary embodiments of the present disclosure will become more apparent by describing in detail exemplary embodiments of the present disclosure with reference to the accompanying drawings. The accompanying drawings are intended to describe exemplary embodiments of the present disclosure and should not be interpreted as limiting the scope of the present disclosure.

[0006] Figure 1 is a perspective view showing a HEMT device according to an example embodiment of the present disclosure.

[0007] Figure 2 yes Figure 1 The illustrated is a perspective view of a HEMT device with the gate structure omitted.

[0008] Figure 3 is a plan view of a HEMT device according to an example embodiment of the present disclosure. FIG. 4A to FIG. 4C is a plan view showing a HEMT device according to an example embodiment of the present disclosure, which demonstrates different examples of width variation of the stress modulation trench.

[0009] FIG. 5A to FIG. 5D is a schematic diagram showing the effect of trench stress release at different positions in the gate width direction in a HEMT device according to an example embodiment of the present disclosure.

[0010] Figure 6 is a flow chart illustrating a method of manufacturing a HEMT device according to an example embodiment of the present disclosure.

[0011] Figures 7 to 11 is a perspective view showing a HEMT device at various process stages according to an example embodiment of the present disclosure. DETAILED DESCRIPTION

[0012] Exemplary embodiments of the inventive concept will be described in detail below with reference to the accompanying drawings.

[0013] However, the present invention can be exemplified in many different forms and should not be construed as being limited to the exemplary embodiments described herein. In addition, these embodiments are provided to make this disclosure thorough and complete and to fully convey the scope of the present invention to those skilled in the art.

[0014] In the drawings, the shapes and dimensions of elements may be exaggerated for clarity, and the same reference numerals will be used throughout to designate the same or like elements.

[0015] It should be understood that, although the terms first, second, etc. are used in this article to describe each element, these elements should not be limited by these terms. These terms are only used to distinguish an element from another element. For example, the first element can be referred to as the second element, and similarly, the second element can be referred to as the first element, without departing from the scope of the example embodiments of the present invention application concept. As used in this article, the term "and / or" includes any and all combinations of one or more listed related items.

[0016] The terms used herein are only used to describe the exemplary embodiments described herein and are not intended to limit the present invention application concept. As used herein, unless otherwise clearly indicated in the context, the singular forms "a", "an" and "the" are also intended to include plural forms. It should also be understood that when the terms "including", "provided with" and / or "having" are used in exemplary embodiments, they indicate the presence of the features, wholes, steps, operations, elements and / or parts, but do not exclude the presence or addition of other one or more features, wholes, steps, operations, elements, parts and / or combinations thereof.

[0017] Unless otherwise specified, all terms used herein, including illustrative terms or technical terms, should be understood to have meanings that are obvious to one of ordinary technicians in the field. In addition, terms defined in common dictionaries and used in the following description should be understood to have meanings equivalent to those used in the relevant description, and unless otherwise specified herein, the terms should not be understood as ideal or overly formal meanings.

[0018] Example embodiments of the inventive concept are described in detail below with reference to the accompanying drawings.

[0019] In order to improve the linearity of HEMT devices at high frequencies, various linearization technologies based on HEMT devices have been proposed, such as Fin HEMT, dual-channel HEMT and metal-insulator-semiconductor (MIS) HEMT technology. Fin HEMT is a technology that integrates fins of different widths in the gate width direction, which can achieve a larger transconductance gate voltage swing, thereby significantly improving the linearity of the device. Dual-channel HEMT is a technology that uses the coupling between two channels to suppress the nonlinear change of the access resistance, thereby improving the output third-order intermodulation point (OIP3) value of the device. MIS HEMT is a technology that adds a dielectric layer to the traditional GaN HEMT, which can effectively suppress the generation of interface states, thereby improving the linearity of the device.

[0020] However, these linearization technologies often introduce serious interface states, short channel effects, and large parasitic capacitances, which severely limit the frequency characteristics of the device and make it difficult to meet the needs of high-linearity applications at higher frequencies. Therefore, new high-linearity technologies are being explored to improve the linearity and frequency characteristics of HEMT devices (especially GaN HEMT devices).

[0021] To this end, the embodiments of the present disclosure provide a HEMT device based on local stress modulation under the gate and a method for manufacturing the same, so as to significantly improve the linearity of the device, especially the linearity at higher frequency bands.

[0022] Figure 1 is a perspective view showing a HEMT device according to an example embodiment of the present disclosure. Figure 2 yes Figure 1 The illustrated is a perspective view of a HEMT device with the gate structure omitted. Figure 3 is a plan view of a HEMT device according to an example embodiment of the present disclosure. FIG. 4A to FIG. 4C is a plan view showing a HEMT device according to an example embodiment of the present disclosure, which demonstrates different examples of width variation of the stress modulation trench.

[0023] Reference Figure 1 , the HEMT device according to the exemplary embodiment of the present disclosure may include a substrate 100, a channel layer 200 located on the substrate 100, a barrier layer 300 located on the channel layer 200, a stress modulation layer 400 located on the barrier layer 300, and a source S, a drain D, and a gate G. The source S and the drain D are located on the barrier layer 300, extend in a first horizontal direction D1, and are opposite in a second horizontal direction D2 intersecting the first horizontal direction D1. The gate G is located between the source S and the drain D in the second horizontal direction D2. The first horizontal direction D1 may be referred to as a "gate width direction". The second horizontal direction D2 may be referred to as a "gate length direction".

[0024] Reference Figures 1 to 3 , the stress modulation layer 400 is an in-situ passivation layer and has a stress modulation groove 410, wherein at least a portion of the gate G is filled in the stress modulation groove 410. The stress modulation groove 410 extends in the first horizontal direction D1 and penetrates the stress modulation layer 400 in the vertical direction D3. Figure 5A The width of the stress modulation groove 410 in the second horizontal direction D2 is different. Figure 3 At different positions in the first horizontal direction D1, the stress modulation trench 410 may have widths W1 to Wn, respectively. The stress modulation layer may be located between the source S and the drain D in the second horizontal direction D2.

[0025] The width of the stress modulation groove 410 may gradually change along the first horizontal direction D1. Figure 2 and Figure 3 As shown, the width of the stress modulation trench 410 decreases along the first horizontal direction D1 . FIG. 4A to FIG. 4C Other examples of how the width of the stress modulation grooves may vary are shown. Figure 4A As shown, the width of the stress modulation groove 410 may first decrease and then increase along the first horizontal direction D1. Figure 4BAs shown, the width of the stress modulation groove 410 may first increase and then decrease along the first horizontal direction D1. Figure 4C As shown in FIG. 1 , the width of the stress modulation groove 410 may be gradually increased along the first horizontal direction D1. However, the exemplary embodiments of the present disclosure are not limited thereto, as long as the width of the stress modulation groove 410 can be gradually changed along the first horizontal direction D1. As another example, the width of the stress modulation groove may be gradually increased along the first horizontal direction D1. Figures 3 to 4C The width variation mode in the first horizontal direction D1 is a basic unit, and the width variation is periodically or combinedly varied along the first horizontal direction D1. For example, the stress modulation groove has the following Figure 3 The first portion of the width shown decreases along the first horizontal direction, and Figure 4B The second portion shown has a width that increases first and then decreases along the first horizontal direction. For example, the stress modulation trench has one of the first portion and the second portion, and the one is periodically arranged.

[0026] In some embodiments, the width of the stress modulation groove 410 may range from 20 nm to 500 nm. For example, the width of the stress modulation groove 410 varies from 20 nm to 500 nm. Figure 1 The stress modulation groove 410 shown has different widths at different positions in the first horizontal direction D1, and the maximum value among these different widths can be 500nm, and the minimum value can be 20nm. For example, various values ​​among these different widths can be 50nm, 80nm, 100nm, 120nm, 150nm, 200nm, 300nm, 400nm, etc. Such a width range is conducive to improving linearity in the millimeter wave frequency band. In other embodiments, the gradual range of the width of the stress modulation groove 410 can be designed according to the specific frequency band requirements to achieve a compromise between frequency and linearity.

[0027] In this document, the term "in-situ passivation layer" refers to a passivation layer formed by in-situ growth. In some embodiments, the in-situ passivation layer is an in-situ SiN layer. Compared to a non-in-situ grown passivation layer with an amorphous structure, the in-situ passivation layer may have a crystalline / quasi-crystalline structure, and the chemical bond between its material and the surface of the barrier layer is more stable and ideal, and can cope with more complex stress environments without degradation, and stress can be applied to the barrier layer. For example, the in-situ passivation layer may be an in-situ SiN layer with a crystalline or quasi-crystalline structure. For example, for the case where the in-situ passivation layer is an in-situ SiN layer and the barrier layer includes at least one of AlGaN, AlN, InAlN, ScAlN and InAlGaN, the lattice length of the in-situ SiN layer is greater than the lattice length of the barrier layer.

[0028] In some embodiments, the thickness of the stress modulation layer 400 is in the range of 2 nm to 200 nm. In some embodiments, the thickness of the stress modulation layer 400 is in the range of 2 nm to 30 nm. In some embodiments, the thickness of the stress modulation layer 400 is in the range of 50 nm to 200 nm.

[0029] In some embodiments, the upper surface of the stress modulation layer 400 is lower than the upper surfaces of the source S and the drain D.

[0030] By setting the stress modulation layer 400 to an appropriate thickness, the stress of the stress modulation layer 400 can be mainly applied to the barrier layer 300 located thereunder, while avoiding the stress from being dissipated in the upward direction. In addition, the gate carrier concentration range of the HEMT device can be adjusted by the thickness of the stress modulation layer 400.

[0031] In some embodiments, the stress modulation trench 410 may be closer to the source S and further away from the drain D. In this case, the breakdown voltage of the device may be increased, so that the HEMT device may be suitable for application scenarios with more stringent conditions. A metal interconnect layer (not shown in the figure) may be further disposed on the source S and the drain D.

[0032] In some embodiments, the barrier layer 300 includes at least one of AlGaN, AlN, InAlN, ScAlN, and InAlGaN. In some embodiments, the channel layer 200 includes at least one of GaN, InGaN, and AlGaN with a low aluminum component, for example, doped GaN. In some embodiments, the substrate 100 includes SiC / sapphire / high-resistance Si.

[0033] In some embodiments, the gate G has a T-type floating gate structure, in which a cross section of the gate G taken in the gate length direction is T-shaped, and the gate G has a floating portion separated from the layer structure (e.g., barrier layer and in-situ passivation layer) below it. Such a T-type floating gate structure can have low insertion loss, effectively reduce the parasitic capacitance of the device, and improve the frequency characteristics of the entire device.

[0034] Will refer to FIG. 5A to FIG. 5D The principle of achieving high linearity of the HEMT device according to the embodiment of the present disclosure is described. Figure 5A is a perspective view of a HEMT device according to an embodiment of the present disclosure, except for line AA, line BB, and line CC. Figure 1 are substantially the same; FIG. 5B to FIG. 5D Along the Figure 5A Cross-sectional views taken along lines AA, BB, and CC.

[0035] FIG. 5B to FIG. 5DThe figure shows the influence of the width of the stress modulation groove 410 on stress release at different positions in the first horizontal direction D1. Since the stress modulation layer 400 is an in-situ passivation layer and the stress modulation groove 410 has different widths at different positions in the first horizontal direction D1, the stress applied to the barrier layer 300 by the stress modulation layer 400 is different at different positions in the first horizontal direction D1.

[0036] like FIG. 5B to FIG. 5D As shown, as the width of the stress modulation groove 410 decreases, the gate length of the gate G decreases, and the carrier concentration (e.g., two-dimensional electron gas 2DEG) under the gate of the HEMT device increases. As the carrier concentration under the gate increases, the threshold voltage of the device drifts negatively, and the device gradually changes from enhancement mode turn-on to depletion mode turn-on, thereby making the transconductance profile of the entire device flatter and improving linearity.

[0037] For example, Figure 5B As shown, in Figure 5A At the line AA position, the width WA of the stress modulation groove 410 is large, the gate length of the gate G is long, the corresponding local stress release is large, the carrier concentration under the gate is low, and the threshold voltage is positive. Figure 5C As shown, in Figure 5A At the position of line BB, the width of the stress modulation groove 410 is reduced to WB, the gate length of the gate G is correspondingly reduced, and the influence of the stress is compressed. Figure 5D As shown, in Figure 5A At the position of line CC, the width of the stress modulation groove 410 is further reduced to WC, and the gate length of the gate G is further reduced accordingly, the local stress release is smaller, the carrier concentration under the gate is larger, and the threshold voltage is negative. In the process of applying gate voltage to the gate G, the device part with a smaller gate length is turned on first, and the device part with a larger gate length is turned on later, so that the various parts of the entire device in the gate width direction are gradually turned on. In this way, the entire device integrates device parts with different threshold voltages, which not only widens the transconductance profile of the device, but also makes the transconductance of the device flatter within the entire gate voltage swing range, thereby improving linearity and ensuring a wider linear operating range.

[0038] In the HEMT device disclosed in the present invention, a stress whose magnitude varies with position is applied to the barrier layer (especially the region under the gate) by means of a stress modulation layer as an in-situ passivation layer and stress modulation grooves of different widths penetrating the stress modulation layer. As the width of the stress modulation groove changes in the gate width direction, the magnitude of the stress applied to the barrier layer by the stress modulation layer changes, so that the threshold voltage of the HEMT device changes in the gate width direction. Thus, the threshold voltage of the HEMT device is modulated by the stress, thereby significantly improving the linearity of the HEMT device, so that the device achieves high linearity in a higher frequency band. Compared with the existing linearization technology, this stress modulation-based HEMT device has a larger adjustment range for the threshold voltage, which can not only ensure high linearity in a higher frequency band, but also has the advantages of easy manufacturing, high efficiency and energy saving, and low cost.

[0039] As described above, in the HEMT device of the present disclosure, by applying appropriate local stress to the region under the gate of the device, the distribution and movement of carriers in the device can be effectively modulated, and the cross-modulation distortion and nonlinear characteristics can be reduced, thereby achieving high linearity at a higher frequency band.

[0040] The HEMT device according to the embodiment of the present disclosure can be applied to various high-frequency application scenarios, especially in amplifier modules of 5G millimeter-wave base stations, automotive millimeter-wave radars, multi-device collaborative communications, etc.

[0041] Refer to the following Figures 6 to 11 A method for manufacturing a HEMT device according to an embodiment of the present disclosure is described below. Figure 6 is a flow chart illustrating a method of manufacturing a HEMT device according to an example embodiment of the present disclosure. Figures 7 to 11 is a perspective view showing a HEMT device at various process stages according to an exemplary embodiment of the present disclosure. It should be noted that, Figures 7 to 11 The stereogram of Figure 1 Therefore, the HEMT device shown in FIG. Figures 1 to 4C The corresponding description of the duplicate content.

[0042] Reference Figure 6 , the method for manufacturing a HEMT device according to an embodiment of the present disclosure may include steps S10 to S40.

[0043] Step S10: forming an epitaxial structure including a substrate 100, a channel layer 200, a barrier layer 400 and a stress modulation material layer 400'. The epitaxial structure formed can be as follows: Figure 7 shown.

[0044] In this step, the channel layer 200, the barrier layer 300 and the stress modulation material layer 400' can be epitaxially grown on the substrate 100 in sequence by methods such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE). After the barrier layer 300 is formed, the stress modulation material layer 400' is in-situ grown on the barrier layer 300, and the stress modulation material layer 400' can be a passivation layer including silicon nitride. As an example, the specific growth process of the stress modulation material layer 400' of in-situ silicon nitride is described as follows. Through MOCVD in a vacuum environment, the sample is heated to a range of 1250 to 2200°C (the higher the temperature, the closer SiN is to the crystal, and the heating temperature of 1500°C can transform SiN from α-SiN to β-SiN, which is more stable), and SiH4 and NH3 are used as reaction gas sources to generate SiN through high temperature reaction. Since the process of growing epitaxial materials and SiN is in-situ growth, the chemical bond of SiN at the interface between the barrier layer and the stress modulation material layer is better combined with the surface of the barrier layer (such as AlGaN), and the lattice length of the grown α- or β-SiN is about Much longer than the lattice length of the GaN system Therefore, a considerable compressive stress can be applied to the barrier layer, thereby affecting the two-dimensional electron gas concentration of the material. In addition, due to the high-temperature growth environment, the Si-H bond content in SiN is lower, which can significantly optimize the trap characteristics of the device and obtain more stable RF performance.

[0045] In addition, it is clear to those skilled in the art that, in some embodiments, the epitaxial structure may also include common structural layers such as a nucleation layer and a buffer layer, which will not be described in detail here.

[0046] Step S20: forming a source and a drain on the epitaxial structure obtained in step S10.

[0047] In this step, a source and a drain with high conductivity can be formed by ion implantation or annealing. For example, the source and drain patterns can be photolithographically patterned and source and drain metals can be deposited, followed by thermal annealing to form ohmic contacts to obtain the source S and the drain D. The structure obtained in this step can be as shown in FIG. Figure 8 shown.

[0048] Step S30 : forming a stress modulation groove 410 in the stress modulation material layer 400 ′ to obtain a stress modulation layer 400 .

[0049] In this step, a stress modulation groove 410 can be formed in the stress modulation material layer 400' by photolithography and plasma etching to obtain a stress modulation layer 400 having a stress modulation groove 410, such as Fig. 9 and Fig.10 For example, Figure 6As shown, step S30 may include: step S31, stress modulation groove structure lithography, the groove width may vary in the range of 20nm to 500nm; and step S32, using plasma etching such as inductively coupled plasma-reactive ion etching (ICP-RIE) to form a stress modulation groove 410 with varying width to perform local stress modulation under the gate.

[0050] Step S40: forming a gate G corresponding to the stress modulation trench.

[0051] In this step, a gate G is formed between the source S and the drain D, and a portion of the gate G is filled in the stress modulation trench 410. Since the width of the stress modulation trench 410 gradually changes in the first horizontal direction D1, the gate length of the gate G also gradually changes in the first horizontal direction D1 (i.e., the gate width direction). Fig.11 The gate G is shown to be separated from the stress modulation trench 410, but this is only to more clearly illustrate the gradual gate length of the gate G and the gradual width of the trench 410. When the gate G is actually formed, the gate G may not undergo the process of being separated from the trench 410. The device after the gate G is formed can be as follows Figure 1 shown.

[0052] For example, the gate G may have a floating T-shaped structure, such as Fig.11 In this case, step S40 may include steps S41 and S42 (see Figure 6 ) In step S41, a low insertion loss floating T-shaped gate metal is evaporated to form a floating gate structure with a gradually variable gate length. In step S42, the gate metal is stripped to form a floating T-shaped gate G with a gradually variable gate length.

[0053] In the manufacturing method of the HEMT device disclosed in the present invention, a stress modulation material layer as an in-situ passivation layer is formed by an in-situ growth method such as MOCVD, and then a source and drain are formed, and the stress modulation material layer is etched to form a stress modulation groove with a varying width. This manufacturing method can make the resulting HEMT device have high linearity at a higher frequency band. In particular, compared with the method of first forming the source and drain and then forming the SiN passivation layer in a non-in-situ manner by a process such as PECVD, the HEMT device manufactured by the method according to the embodiment of the present invention has higher linearity while ensuring a wider linear operating range.

[0054] In addition, in the manufacturing method according to the embodiment of the present disclosure, there is no etching of the barrier layer and the channel layer, and no material interface damage is introduced. While achieving high linearity characteristics, the device has lower defect effects and is more suitable for the communication field under high gate voltage and high power application conditions. In addition, the method is a planar process, which is simple to implement, highly compatible with existing processes, and low cost.

[0055] Various advantages and effects of each exemplary embodiment are not limited to the above description, and can be easily understood through explanation of specific embodiments in the present disclosure.

[0056] While various example embodiments have been shown and described above, it will be apparent to those skilled in the art that many modifications and changes may be made without departing from the scope of the inventive concept as defined by the claims.

Claims

1. A high electron mobility transistor device, comprising: substrate; a channel layer located on the substrate; a barrier layer located on the channel layer; a source electrode and a drain electrode, the source electrode and the drain electrode being located on the barrier layer, extending in a first horizontal direction, and being arranged opposite to each other in a second horizontal direction intersecting the first horizontal direction; a stress modulation layer, which is located on the barrier layer and between the source and the drain in the second horizontal direction; as well as a gate electrode located between the source electrode and the drain electrode in the second horizontal direction, In which, the stress modulation layer is an in-situ passivation layer and has a stress modulation groove, which extends in the first horizontal direction and penetrates the stress modulation layer in the vertical direction, and at different positions in the first horizontal direction, the width of the stress modulation groove in the second horizontal direction is different, and at least a portion of the gate is filled in the stress modulation groove.

2. The high electron mobility transistor device according to claim 1, wherein: The width of the stress modulation trench gradually changes along the first horizontal direction.

3. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation groove ranges from 20 nm to 500 nm.

4. The high electron mobility transistor device according to claim 1, wherein: The in-situ passivation layer includes in-situ silicon nitride having a crystalline or quasi-crystalline structure.

5. The high electron mobility transistor device according to claim 1, wherein: The thickness of the stress modulation layer ranges from 2 nm to 60 nm.

6. The high electron mobility transistor device according to claim 2, wherein: At different positions in the first horizontal direction, the stress applied by the stress modulation layer to the barrier layer is different.

7. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation trench in the second horizontal direction decreases along the first horizontal direction.

8. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation groove in the second horizontal direction first increases and then decreases along the first horizontal direction.

9. The high electron mobility transistor device according to claim 2, wherein: The width of the stress modulation groove in the second horizontal direction first decreases and then increases along the first horizontal direction.

10. The high electron mobility transistor device according to claim 2, wherein: The stress modulation groove has a first portion whose width in the second horizontal direction decreases along the first horizontal direction and a second portion whose width in the second horizontal direction first increases and then decreases along the first horizontal direction, or The stress modulation groove has one of the first portion and the second portion, and the one is periodically arranged.

11. The high electron mobility transistor device according to claim 1, wherein: The barrier layer includes at least one of AlGaN, AlN, InAlN, ScAlN and InAlGaN.

12. The high electron mobility transistor device according to claim 1, wherein: The channel layer includes at least one of GaN, InGaN, and AlGaN with a low aluminum composition.

13. The high electron mobility transistor device according to claim 1, wherein: The gate has a T-shaped floating gate structure.

14. The high electron mobility transistor device according to claim 1, wherein: An upper surface of the stress modulation layer is lower than upper surfaces of the source and the drain.

15. A method for manufacturing a high electron mobility transistor device, comprising: epitaxially growing a channel layer, a barrier layer and a stress modulation material layer on a substrate in sequence to form an epitaxial structure including the substrate, the channel layer, the barrier layer and the stress modulation material layer; forming a source and a drain on the epitaxial structure; forming a stress modulation groove penetrating the stress modulation material layer in the stress modulation material layer to obtain the stress modulation layer, wherein the stress modulation groove has different widths at different positions in the extension direction of the source and the drain; as well as A gate is formed corresponding to the stress modulation trench.

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